WO2008029440A1 - Electric field aging method for electron emitter - Google Patents
Electric field aging method for electron emitter Download PDFInfo
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- WO2008029440A1 WO2008029440A1 PCT/JP2006/317451 JP2006317451W WO2008029440A1 WO 2008029440 A1 WO2008029440 A1 WO 2008029440A1 JP 2006317451 W JP2006317451 W JP 2006317451W WO 2008029440 A1 WO2008029440 A1 WO 2008029440A1
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- electron emitter
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J63/00—Cathode-ray or electron-stream lamps
- H01J63/02—Details, e.g. electrode, gas filling, shape of vessel
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J9/00—Apparatus or processes specially adapted for the manufacture, installation, removal, maintenance of electric discharge tubes, discharge lamps, or parts thereof; Recovery of material from discharge tubes or lamps
- H01J9/44—Factory adjustment of completed discharge tubes or lamps to comply with desired tolerances
- H01J9/445—Aging of tubes or lamps, e.g. by "spot knocking"
Definitions
- the present invention stabilizes the electron emission physical properties and lifetime characteristics of an electron emitter with respect to an electron emitter having a large number of fine projections on the order of nm having a shape suitable for field emission.
- the present invention relates to an electric field aging method.
- an electron emitter there is a spint type structure in which silicon or metal is formed in a minute conical shape on a substrate in Patent Document 1 or the like, or a structure in which carbon nanotubes are formed on a substrate in Patent Document 2 or the like. And others are known.
- One application of such an electron emitter is a field emission lamp in which an electron emitter is vacuum-sealed in a glass tube and disposed opposite to an anode, and a phosphor is laminated on the anode.
- an electric field is applied to an electron emitter to cause surface emission of fine protrusions such as carbon nanotubes, and the emitted electrons can collide with a phosphor to emit light. It's like! /
- Patent Document 1 Japanese Patent Laid-Open No. 10-223128
- Patent Document 2 JP-A-2005-317415
- the present applicant has invented a new electric field aging method capable of equalizing the aspect ratio of fine protrusions and removing locally unstable portions. Therefore, it is possible to stabilize the electron emission properties and lifetime characteristics of the electron emitter. It was.
- An electric field aging method of an electron emitter that is effective in the present invention is to selectively evaporate each of the plurality of fine protrusions with respect to an electron emitter having a plurality of fine protrusions that emit electrons when an electric field is applied. This makes it possible to equalize the aspect ratio of the entire fine protrusion and to remove locally unstable parts, thereby stabilizing the electron emission physical properties and life characteristics of the electron emitter. is there.
- the electric field aging is performed by selectively evaporating each of the plurality of fine protrusions, the aspect ratio of the entire fine protrusion is equalized and the local protrusion of the fine protrusion is unstable.
- the electron emission portion can be removed, and the electron emission properties and lifetime characteristics of the electron emitter can be stabilized.
- a preferred embodiment of the present invention is such that the electron emitter is disposed opposite to an electrode in a vacuum, and the electron emitter has a potential relationship lower than that of the electrode (when the electrode potential is a positive potential, the electron emitter potential is Is a negative potential or a ground potential) by applying a potential to the electron emitter and the electrode to cause field evaporation of the fine protrusions of the electron emitter.
- the electron emitter is disposed opposite to the electrode in a vacuum or in the atmosphere, and the potential relationship in which the electron emitter is higher than the electrode (the electrode potential is a negative potential or a ground potential). As a potential, the electron emitter potential becomes a positive potential), and the potential is applied to the electron emitter and the electrode to cause field evaporation of the fine protrusions of the electron emitter.
- the electron emission physical properties and life characteristics of the electron emitter can be stabilized.
- FIG. 1 is a schematic enlarged view showing an electron emitter 10 before electric field aging according to the first embodiment.
- FIG. 2 is a diagram showing an electron emitter, an electric field aging electrode, and a DC power source 18 for applying a potential to them in the electric field aging process according to the first embodiment.
- Fig. 3 shows the electric field aging voltage Vage according to Embodiment 1, and the voltage when using the electron emitter. It is a figure which shows the relationship with Vuse.
- FIG. 4 is a schematic enlarged view of the electron emitter after electric field aging according to the first embodiment.
- FIG. 5 is a diagram showing a lifetime characteristic of an electron emitter subjected to electric field aging according to Embodiment 1, and a current characteristic of an electron emitter that has been subjected to electric field aging.
- FIG. 6 is a diagram showing an example of potential application to the electron emitter and the electric field aging electrode according to the first embodiment.
- FIG. 7 is a schematic enlarged view of an electron emitter before electric field aging according to the second embodiment.
- FIG. 8 is a diagram showing an electron emitter, an electric field aging electrode, and a DC power source for applying a potential to them in the electric field aging process according to the second embodiment.
- FIG. 9 is a diagram showing the relationship between the electric field aging voltage Vage and the voltage Vuse when using an electron emitter in the second embodiment.
- FIG. 10 is a schematic enlarged view showing an electron emitter after electric field aging according to the second embodiment.
- FIG. 11 is a diagram showing a lifetime characteristic of an electron emitter subjected to electric field aging according to the second embodiment and a current characteristic of an electron emitter that is not subjected to electric field aging.
- FIG. 12 is a diagram showing an example of potential application to the electron emitter and the electric field aging electrode in the second embodiment.
- FIGS. 1 to 6 are diagrams for explaining the electric field aging method for the electron emitter according to the first embodiment.
- Figure 1 shows an enlarged schematic of the electron emitter before field aging.
- the electron emitter 10 includes a substrate 12 and fine protrusions 14 on the substrate surface.
- the fine protrusion 14 is a fine protrusion 14 made of a carbon film and having a sharp end in the order of nm.
- the fine protrusions 14 include carbon nanotubes, carbon nanowalls, acicular carbon films, and others.
- the fine protrusions 14 may be made of a metal film.
- an electrode (electric field aging electrode) 16 for electric field aging of the electron emitter 10 of FIG. 1 is disposed opposite to the electron emitter 10 of FIG.
- a voltage (electric field aging voltage) Vage is applied from the DC power source 18 so that a positive electric potential is applied to the negative potential and electric field aging electrode 16.
- a forward bias voltage is applied between the electron emitter 10 and the electric field aging electrode 16.
- the electric field aging voltage Vage is a voltage higher than the working voltage Vuse of the electron emitter 10 as shown in FIG.
- the horizontal axis represents voltage
- the vertical axis represents current.
- the voltage-current characteristics of the electron emitter 10 are shown.
- Vage is the electric field aging voltage
- Iage is the current corresponding to the electric field aging voltage Vage
- Vuse is the voltage when the electron emitter is used
- luse is the current corresponding to Vuse.
- the fine protrusions 14 on the surface of the substrate of the electron emitter 10 are selectively subjected to electric field evaporation and the entire fine protrusions 14 As the aspect ratio is equalized, unstable electron emission portions are removed.
- the electron emitter 10 subjected to electric field aging as described above has greatly improved life characteristics as shown by the solid line in FIG. Note that, as shown by the broken line in FIG. 5, the lifetime characteristics of the electron emitter 10 that has not been subjected to the electric field aging process gradually deteriorate with the passage of time of use.
- the electron emitter 10 is grounded, the applied potential of the electron emitter 10 is set to the ground potential, a positive potential is applied to the electric field aging electrode 16 from the DC power source 18, and the DC power source 18 Connect the negative side to the electron emitter 10 and the field aging electrode 16 directly.
- a potential may be applied from the current source 18.
- FIGS. 7 an electric field aging method according to another embodiment will be described with reference to FIGS.
- the electron emitter 10 used for electric field aging in the second embodiment is the same as that shown in FIG. 1, but is shown again in FIG. 7 as the second embodiment. The description of FIG. 7 is omitted.
- an electrode for electric field aging (electric field aging electrode 16) is disposed opposite to the electron emitter 10, and the electron emitter 10 has a positive potential and the electric field aging electrode 16 has a negative potential.
- the electric field aging voltage Vage is a voltage (I Vage I>> I Vuse
- the electric field aging voltage Vage is less than a voltage (breakdown voltage) at which a large current flows from the electron emitter 10 to the electric field aging electrode 16 and becomes conductive.
- a voltage (breakdown voltage) at which a large current flows from the electron emitter 10 to the electric field aging electrode 16.
- the fine protrusions 14 are selectively evaporated by this electric field aging voltage Vage !, and in the electron emitter 10 of FIG. 7, the fine protrusions 14 on the substrate surface are selectively evaporated by electric field as shown in FIG.
- FIG. 10 is the same as FIG. 4, but is re-displayed as the second embodiment.
- the electron emitter 10 subjected to electric field aging as described above has significantly improved life characteristics as shown by the solid line in FIG.
- the lifetime characteristics of the electron emitter 10 that has not been subjected to electric field aging treatment gradually deteriorates with the passage of time of use.
- the electron emitter 10 is connected to the positive side of the DC power source 18 to apply a positive potential, the negative side of the DC power source 18 is grounded, while the electric field aging electrode 16 May be applied to the electron emitter 10 and the electric field aging electrode 16 from a DC power source 18.
- the fine protrusions 14 of the electron emitter 10 have the same aspect ratio by electric field evaporation, and the unstable portions with respect to the electric field are removed, so that the electron emission is reduced.
- the electronic emitter 10 has a stable physical property and lifetime characteristics.
- the electric field aging process by the electric field evaporation can be performed on the fine protrusions 1418b of the electron emitter 1018 not only in the vacuum but also in the air by the electric field evaporation.
- the electric field aging method of the second embodiment makes it easy to control electric field aging.
- abnormal discharge hardly occurs and there is no possibility of adversely affecting the anode.
- the surface of the electron emitter 10 is not contaminated with a conventional gas in a vacuum, and the work function of electric field radiation as the electron emitter 10 is not affected. .
- the surface of the electron emitter 10 is not sputtered and contaminated.
- This ⁇ becomes larger as the tip of the fine protrusion 14 becomes sharper, but is about 1000 or more. Therefore, the electron emitter 10 can apply an electric field of V / nm order to the surface of the fine protrusion 14.
- the electric field aging method useful for the present invention is particularly useful for stabilizing the electron emission physical properties and life characteristics of the electron emitter.
- This electronic emitter can be used by being incorporated in an electronic device such as a field emission lamp.
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- Manufacture Of Electron Tubes, Discharge Lamp Vessels, Lead-In Wires, And The Like (AREA)
Abstract
Description
明 細 書 Specification
電子ェミッタの電界エージング方法 Electric field aging method of electron emitter
技術分野 Technical field
[0001] 本発明は、電界放射を行うのに適した形状を備えた nmオーダーの微細突起を多 数備えた電子ェミッタに対して当該電子ェミッタの電子放出物性と寿命特性とを安定 化させるための電界エージング方法に関する。 The present invention stabilizes the electron emission physical properties and lifetime characteristics of an electron emitter with respect to an electron emitter having a large number of fine projections on the order of nm having a shape suitable for field emission. The present invention relates to an electric field aging method.
背景技術 Background art
[0002] 電子ェミッタには、特許文献 1等で基板上にシリコンや金属を微小な円錐状に形成 したスピント型の構造のものや、特許文献 2等で基板上にカーボンナノチューブを形 成した構造のものや、その他が知られている。このような電子ェミッタの 1つの用途とし て電子ェミッタをガラス管内で真空封止した状態で陽極と対向配置すると共にこの陽 極上に蛍光体を積層したフィールドエミッションランプがある。 [0002] As an electron emitter, there is a spint type structure in which silicon or metal is formed in a minute conical shape on a substrate in Patent Document 1 or the like, or a structure in which carbon nanotubes are formed on a substrate in Patent Document 2 or the like. And others are known. One application of such an electron emitter is a field emission lamp in which an electron emitter is vacuum-sealed in a glass tube and disposed opposite to an anode, and a phosphor is laminated on the anode.
[0003] このフィールドェミッションランプでは、電子ェミッタに電界が印加されカーボンナノ チューブ等の微細突起表面力 電子放出が行われ、この放出した電子が蛍光体に 衝突してこれを発光させることができるようになって!/、る。 In this field emission lamp, an electric field is applied to an electron emitter to cause surface emission of fine protrusions such as carbon nanotubes, and the emitted electrons can collide with a phosphor to emit light. It's like! /
[0004] 上記した微細突起のアスペクト比が不均等な場合では、アスペクト比が特定の微細 突起に電界集中が起こって電子放出が行われて、その微細突起が他の微細突起よ りも早期に熱蒸発により消耗し、次に別のアスペクト比の微細突起に電界集中が起こ るというごとぐ電子放出物性が不安定となって発光のちらつきや発光の不均一とい つた不具合が発生する上に寿命特性も短く不安定化してしまう。 [0004] When the aspect ratios of the fine protrusions are not uniform, electric field concentration occurs in the fine protrusions having a specific aspect ratio, and electrons are emitted, so that the fine protrusions are earlier than the other fine protrusions. In addition to the fact that the electron emission properties become unstable as the electric field concentrates on the fine protrusions with different aspect ratios, which are consumed due to thermal evaporation, the problem of flickering of light emission and unevenness of light emission occurs. The characteristics are also short and unstable.
特許文献 1 :特開平 10— 223128号公報 Patent Document 1: Japanese Patent Laid-Open No. 10-223128
特許文献 2 :特開 2005— 317415号公報 Patent Document 2: JP-A-2005-317415
発明の開示 Disclosure of the invention
発明が解決しょうとする課題 Problems to be solved by the invention
[0005] そこで、本出願人は、上記した課題に鑑みて、微細突起のアスペクト比の均等化と 局所的に不安定な部分を除去することができる電界エージング方法を新規に発明し 、これによつて電子ェミッタの電子放出物性と寿命特性とを安定化させることを可能と したのである。 [0005] In view of the above problems, the present applicant has invented a new electric field aging method capable of equalizing the aspect ratio of fine protrusions and removing locally unstable portions. Therefore, it is possible to stabilize the electron emission properties and lifetime characteristics of the electron emitter. It was.
課題を解決するための手段 Means for solving the problem
[0006] 本発明に力かる電子ェミッタの電界エージング方法は、電界印加により電子放出す る複数の微細突起を有した電子ェミッタに対して上記複数の微細突起それぞれを選 択的に電界蒸発させることにより微細突起全体のアスペクト比を均等化させると共に 局所的に不安定な部分を除去し、これによつて該電子ェミッタの電子放出物性と寿 命特性とを安定化させることを特徴とするものである。 [0006] An electric field aging method of an electron emitter that is effective in the present invention is to selectively evaporate each of the plurality of fine protrusions with respect to an electron emitter having a plurality of fine protrusions that emit electrons when an electric field is applied. This makes it possible to equalize the aspect ratio of the entire fine protrusion and to remove locally unstable parts, thereby stabilizing the electron emission physical properties and life characteristics of the electron emitter. is there.
[0007] 本発明によると、上記複数の微細突起それぞれを選択的に電界蒸発させることによ り電界エージングするので、微細突起全体のアスペクト比の均等化と微細突起の局 所的に不安定な電子放出部分を除去させることができるようになり、電子ェミッタの電 子放出物性と寿命特性を安定化させることができるようになる。 [0007] According to the present invention, since the electric field aging is performed by selectively evaporating each of the plurality of fine protrusions, the aspect ratio of the entire fine protrusion is equalized and the local protrusion of the fine protrusion is unstable. The electron emission portion can be removed, and the electron emission properties and lifetime characteristics of the electron emitter can be stabilized.
[0008] 本発明の好適な一態様は、真空中で上記電子ェミッタを電極に対向配置し、電子 ェミッタが電極よりも低電位となる電位関係（電極電位をプラス電位とすると電子エミ ッタ電位がマイナス電位または接地電位となる関係）として、電子ェミッタと電極とに 電位印加して上記電子ェミッタの微細突起を電界蒸発させることである。 [0008] A preferred embodiment of the present invention is such that the electron emitter is disposed opposite to an electrode in a vacuum, and the electron emitter has a potential relationship lower than that of the electrode (when the electrode potential is a positive potential, the electron emitter potential is Is a negative potential or a ground potential) by applying a potential to the electron emitter and the electrode to cause field evaporation of the fine protrusions of the electron emitter.
[0009] 本発明の好適な一態様は、真空中または大気中で上記電子ェミッタを電極に対向 配置し、電子ェミッタが電極よりも高電位となる電位関係（電極電位をマイナス電位ま たは接地電位とすると電子ェミッタ電位がプラス電位となる関係）として、電子ェミッタ と電極とに電位印加して上記電子ェミッタの微細突起を電界蒸発させることである。 発明の効果 [0009] In a preferred aspect of the present invention, the electron emitter is disposed opposite to the electrode in a vacuum or in the atmosphere, and the potential relationship in which the electron emitter is higher than the electrode (the electrode potential is a negative potential or a ground potential). As a potential, the electron emitter potential becomes a positive potential), and the potential is applied to the electron emitter and the electrode to cause field evaporation of the fine protrusions of the electron emitter. The invention's effect
[0010] 本発明によれば、電子ェミッタに電界エージングを施すことにより、電子ェミッタの 電子放出物性と寿命特性とを安定化させることができる。 [0010] According to the present invention, by subjecting the electron emitter to electric field aging, the electron emission physical properties and life characteristics of the electron emitter can be stabilized.
図面の簡単な説明 Brief Description of Drawings
[0011] [図 1]図 1は実施の形態 1による電界エージング前の電子ェミッタ 10を模式的に拡大 して示す図である。 FIG. 1 is a schematic enlarged view showing an electron emitter 10 before electric field aging according to the first embodiment.
[図 2]図 2は実施の形態 1による電界エージング処理に際して電子ェミッタと電界エー ジング用電極とこれらに電位を印加する直流電源 18とを示す図である。 FIG. 2 is a diagram showing an electron emitter, an electric field aging electrode, and a DC power source 18 for applying a potential to them in the electric field aging process according to the first embodiment.
[図 3]図 3は実施の形態 1による電界エージング電圧 Vage、電子ェミッタ使用時電圧 Vuseとの関係を示す図である。 [Fig. 3] Fig. 3 shows the electric field aging voltage Vage according to Embodiment 1, and the voltage when using the electron emitter. It is a figure which shows the relationship with Vuse.
[図 4]図 4は実施の形態 1による電界エージング後の電子ェミッタを模式的に拡大して 示す図である。 FIG. 4 is a schematic enlarged view of the electron emitter after electric field aging according to the first embodiment.
[図 5]図 5は実施の形態 1による電界エージングを施した電子ェミッタの寿命特性と、 電界エージングを施さな力つた電子ェミッタの電流特性とを示す図である。 FIG. 5 is a diagram showing a lifetime characteristic of an electron emitter subjected to electric field aging according to Embodiment 1, and a current characteristic of an electron emitter that has been subjected to electric field aging.
[図 6]図 6は実施の形態 1による電子ェミッタと電界エージング用電極とに対する電位 印加の例を示す図である。 FIG. 6 is a diagram showing an example of potential application to the electron emitter and the electric field aging electrode according to the first embodiment.
[図 7]図 7は実施の形態 2による電界エージング前の電子ェミッタを模式的に拡大して 示す図である。 FIG. 7 is a schematic enlarged view of an electron emitter before electric field aging according to the second embodiment.
[図 8]図 8は実施の形態 2による電界エージング処理に際して電子ェミッタと電界エー ジング用電極とこれらに電位を印加する直流電源とを示す図である。 FIG. 8 is a diagram showing an electron emitter, an electric field aging electrode, and a DC power source for applying a potential to them in the electric field aging process according to the second embodiment.
[図 9]図 9は実施の形態 2における電界エージング電圧 Vage、電子ェミッタ使用時電 圧 Vuseとの関係を示す図である。 FIG. 9 is a diagram showing the relationship between the electric field aging voltage Vage and the voltage Vuse when using an electron emitter in the second embodiment.
[図 10]図 10は実施の形態 2による電界エージング後の電子ェミッタを模式的に拡大 して示す図である。 FIG. 10 is a schematic enlarged view showing an electron emitter after electric field aging according to the second embodiment.
[図 11]図 11は実施の形態 2により電界エージングを施した電子ェミッタの寿命特性と 、電界エージングを施さな力つた電子ェミッタの電流特性とを示す図である。 FIG. 11 is a diagram showing a lifetime characteristic of an electron emitter subjected to electric field aging according to the second embodiment and a current characteristic of an electron emitter that is not subjected to electric field aging.
[図 12]図 12は実施の形態 2における電子ェミッタと電界エージング用電極とに対する 電位印加の例を示す図である。 FIG. 12 is a diagram showing an example of potential application to the electron emitter and the electric field aging electrode in the second embodiment.
符号の説明 Explanation of symbols
[0012] 10 電子ェミッタ [0012] 10 electron emitter
12 基板 12 Board
14 微細突起 14 Fine protrusion
16 電界エージング用電極 16 Electric field aging electrode
18 直流電源 18 DC power supply
発明を実施するための最良の形態 BEST MODE FOR CARRYING OUT THE INVENTION
[0013] 以下、本発明の実施の形態に係る電子ェミッタの電界エージング方法を詳細に説 明する。 [0014] (実施の形態 1) [0013] The electric field aging method of the electron emitter according to the embodiment of the present invention will be described in detail below. [0014] (Embodiment 1)
図 1ないし図 6は実施の形態 1に係る電子ェミッタに対する電界エージング方法の説 明に供する図である。図 1に電界エージング前の電子ェミッタを模式的に拡大して示 す。この電子ェミッタ 10は基板 12と基板表面の微細突起 14とから構成されている。 微細突起 14は、炭素膜からなる nmオーダーの鋭端を持つ微細突起 14である。この 微細突起 14にはカーボンナノチューブ、カーボンナノウォール、針状炭素膜、その 他がある。微細突起 14は金属膜で構成されても構わない。 1 to 6 are diagrams for explaining the electric field aging method for the electron emitter according to the first embodiment. Figure 1 shows an enlarged schematic of the electron emitter before field aging. The electron emitter 10 includes a substrate 12 and fine protrusions 14 on the substrate surface. The fine protrusion 14 is a fine protrusion 14 made of a carbon film and having a sharp end in the order of nm. The fine protrusions 14 include carbon nanotubes, carbon nanowalls, acicular carbon films, and others. The fine protrusions 14 may be made of a metal film.
[0015] 次に図 2で示すように図 1の電子ェミッタ 10に対してこの電子ェミッタ 10を電界エー ジングするための電極 (電界エージング用電極） 16を対向配置するとともに、電子ェ ミッタ 10にマイナス電位、電界エージング用電極 16にプラス電位が印加されるように 直流電源 18から電圧（電界エージング電圧) Vageを印加する。これにより電子エミッ タ 10と電界エージング用電極 16との間には順バイアス電圧が印加されること〖こなる。 Next, as shown in FIG. 2, an electrode (electric field aging electrode) 16 for electric field aging of the electron emitter 10 of FIG. 1 is disposed opposite to the electron emitter 10 of FIG. A voltage (electric field aging voltage) Vage is applied from the DC power source 18 so that a positive electric potential is applied to the negative potential and electric field aging electrode 16. As a result, a forward bias voltage is applied between the electron emitter 10 and the electric field aging electrode 16.
[0016] この電界エージング電圧 Vageは図 3で示すように電子ェミッタ 10の使用電圧 Vuse よりも大きい電圧である。図 3で横軸は電圧、縦軸は電流であり、電子ェミッタ 10の電 圧—電流特性を示す。図 3で Vageは電界エージング電圧、 Iageはその電界エージ ング電圧 Vageに対応する電流、 Vuseは電子ェミッタ使用時電圧、 luseは Vuseに対 応する電流である。図 3で明らかであるように電界エージング電圧 Vage > >電子エミ ッタ使用時電圧 Vuseである。 [0016] The electric field aging voltage Vage is a voltage higher than the working voltage Vuse of the electron emitter 10 as shown in FIG. In FIG. 3, the horizontal axis represents voltage, and the vertical axis represents current. The voltage-current characteristics of the electron emitter 10 are shown. In Fig. 3, Vage is the electric field aging voltage, Iage is the current corresponding to the electric field aging voltage Vage, Vuse is the voltage when the electron emitter is used, and luse is the current corresponding to Vuse. As is clear from Fig. 3, the electric field aging voltage Vage>> the voltage Vuse when using the electron emitter.
[0017] 以上の電界エージングにより図 4に電界エージングされた電子ェミッタ 10を模式的 に拡大して示すように、電子ェミッタ 10の基板表面の微細突起 14は選択的に電界 蒸発され微細突起 14全体のアスペクト比が均等化されると共に不安定な電子放出 部分が除去されてしまって 、る。 [0017] As shown schematically in FIG. 4 in which the electron emitter 10 subjected to electric field aging by the above electric field aging is schematically enlarged, the fine protrusions 14 on the surface of the substrate of the electron emitter 10 are selectively subjected to electric field evaporation and the entire fine protrusions 14 As the aspect ratio is equalized, unstable electron emission portions are removed.
[0018] 上記のように電界エージングされた電子ェミッタ 10は図 5の実線で示すように寿命 特性が大幅に向上している。なお、図 5の破線で示すように電界エージング処理しな 力つた電子ェミッタ 10は寿命特性が使用時間の経過と共に次第に低下している。 The electron emitter 10 subjected to electric field aging as described above has greatly improved life characteristics as shown by the solid line in FIG. Note that, as shown by the broken line in FIG. 5, the lifetime characteristics of the electron emitter 10 that has not been subjected to the electric field aging process gradually deteriorate with the passage of time of use.
[0019] なお、図 6で示すように電子ェミッタ 10を接地して電子ェミッタ 10の印加電位を接 地電位とし、電界エージング用電極 16に直流電源 18からプラス電位を印加し、直流 電源 18のマイナス側を接地して、電子ェミッタ 10と電界エージング用電極 16とに直 流電源 18から電位を印加してもよい。 As shown in FIG. 6, the electron emitter 10 is grounded, the applied potential of the electron emitter 10 is set to the ground potential, a positive potential is applied to the electric field aging electrode 16 from the DC power source 18, and the DC power source 18 Connect the negative side to the electron emitter 10 and the field aging electrode 16 directly. A potential may be applied from the current source 18.
(実施の形態 2) (Embodiment 2)
次に図 7ないし図 12を参照して他の実施の形態に係る電界エージング方法を説明 する。実施の形態 2の電界エージングに用 、る電子ェミッタ 10は図 1と同様であるが 実施の形態 2として図 7に再掲する。図 7の説明は略する。 Next, an electric field aging method according to another embodiment will be described with reference to FIGS. The electron emitter 10 used for electric field aging in the second embodiment is the same as that shown in FIG. 1, but is shown again in FIG. 7 as the second embodiment. The description of FIG. 7 is omitted.
[0020] この電子ェミッタ 10に対して図 8で示すように電界エージングするための電極（電界 エージング用電極 16)を対向配置するとともに、電子ェミッタ 10にプラス電位、電界 エージング用電極 16にマイナス電位が印加されるように直流電源 18から電圧（電界 エージング電圧) Vageを印加する。この場合、電子ェミッタ 10と電界エージング用電 極 16との間には逆バイアス電圧が印加されることになる。 As shown in FIG. 8, an electrode for electric field aging (electric field aging electrode 16) is disposed opposite to the electron emitter 10, and the electron emitter 10 has a positive potential and the electric field aging electrode 16 has a negative potential. Apply voltage (electric field aging voltage) Vage from DC power supply 18 so that is applied. In this case, a reverse bias voltage is applied between the electron emitter 10 and the electric field aging electrode 16.
[0021] この電界エージング電圧 Vageは図 9で示すように電子ェミッタ使用時電圧 Vuseよ りも絶対値で大きい電圧（ I Vage I > > I Vuse | )である。 [0021] As shown in Fig. 9, the electric field aging voltage Vage is a voltage (I Vage I>> I Vuse |) that is larger in absolute value than the voltage Vuse when the electron emitter is used.
[0022] 電界エージング電圧 Vageは電子ェミッタ 10から電界エージング用電極 16に大電 流が流れて導通する電圧 (ブレークダウン電圧)未満である。この電界エージング電 圧 Vageが電子ェミッタ 10に印加されている場合、電子ェミッタ 10から電界エージン グ用電極 16には電流は殆ど流れない。そして、この電界エージング電圧 Vageにより 微細突起 14は選択的に電界蒸発されてしま!、、図 7の電子ェミッタ 10は図 10で示 すように基板表面の微細突起 14が選択的に電界蒸発され微細突起 14全体のァス ぺクト比が均等化されると共に電子放出する上で不安定な部分が除去されてしまつ て 、る。図 10は図 4と同様であるが実施の形態 2として再掲して 、る。 [0022] The electric field aging voltage Vage is less than a voltage (breakdown voltage) at which a large current flows from the electron emitter 10 to the electric field aging electrode 16 and becomes conductive. When the electric field aging voltage Vage is applied to the electron emitter 10, almost no current flows from the electron emitter 10 to the electric field aging electrode 16. Then, the fine protrusions 14 are selectively evaporated by this electric field aging voltage Vage !, and in the electron emitter 10 of FIG. 7, the fine protrusions 14 on the substrate surface are selectively evaporated by electric field as shown in FIG. As a result, the aspect ratio of the entire fine protrusion 14 is equalized, and an unstable portion is removed when electrons are emitted. FIG. 10 is the same as FIG. 4, but is re-displayed as the second embodiment.
[0023] 上記のように電界エージングされた電子ェミッタ 10は図 11の実線で示すように寿命 特性が大幅に向上している。そして、図 11で破線で示すように電界エージング処理 しな力つた電子ェミッタ 10は寿命特性が使用時間の経過と共に次第に低下している The electron emitter 10 subjected to electric field aging as described above has significantly improved life characteristics as shown by the solid line in FIG. In addition, as shown by the broken line in FIG. 11, the lifetime characteristics of the electron emitter 10 that has not been subjected to electric field aging treatment gradually deteriorates with the passage of time of use.
[0024] なお、図 12で示すように電子ェミッタ 10を直流電源 18のプラス側に接続してプラス 電位を印加し、この直流電源 18のマイナス側を接地し、一方、電界エージング用電 極 16を接地して、電子ェミッタ 10と電界エージング用電極 16とに直流電源 18から電 位を印加してもよい。 [0025] 以上の実施の形態 2の場合も、電子ェミッタ 10の微細突起 14は電界蒸発により全 体のアスペクト比が均等化され、電界に対して不安定な部分が除去されて、電子放 出物性ならびに寿命特性が安定ィ匕した電子ェミッタ 10の構成となっている。 As shown in FIG. 12, the electron emitter 10 is connected to the positive side of the DC power source 18 to apply a positive potential, the negative side of the DC power source 18 is grounded, while the electric field aging electrode 16 May be applied to the electron emitter 10 and the electric field aging electrode 16 from a DC power source 18. [0025] Also in the case of Embodiment 2 described above, the fine protrusions 14 of the electron emitter 10 have the same aspect ratio by electric field evaporation, and the unstable portions with respect to the electric field are removed, so that the electron emission is reduced. The electronic emitter 10 has a stable physical property and lifetime characteristics.
[0026] この実施の形態 2の電界エージングでは真空中だけではなく大気中でも電界蒸発 により電子ェミッタ 1018の微細突起 1418bに対する電界蒸発による電界エージング 処理を実施することができる。その結果、実施の形態 2の電界エージング方法では、 電界エージングの制御が容易となる。また、電子ェミッタ 10には電界エージング処理 に大電流を流す必要がないから異常放電が起きにくく陽極に悪影響を及ぼしたりす るおそれがない。そのうえ、大気中での電界エージングであるから従来のような真空 中のガスで電子ェミッタ 10表面が汚れてしまうことがなく電子ェミッタ 10としての電界 放射の仕事関数に影響するようなことがな 、。加えて従来のように電子ェミッタ 10表 面がスパッタリングされて汚れてしまうといったこともない。さらに、電子ェミッタ 10に大 電流を流して電界エージングする必要が無くなり、したがって、電子ェミッタ 10と陽極 との間に接続する直流電源 18としては従来の電界エージングに用いる直流電源 18 のような厳 、仕様が要求されずに済み、安価に電界エージングを実施することがで きる、などから、画期的な電子ェミッタ 10に対する電子放出物性ならびに寿命特性の 安定化方法である。 [0026] In the electric field aging of the second embodiment, the electric field aging process by the electric field evaporation can be performed on the fine protrusions 1418b of the electron emitter 1018 not only in the vacuum but also in the air by the electric field evaporation. As a result, the electric field aging method of the second embodiment makes it easy to control electric field aging. In addition, since it is not necessary to apply a large current to the electric field aging process in the electron emitter 10, abnormal discharge hardly occurs and there is no possibility of adversely affecting the anode. In addition, since it is electric field aging in the atmosphere, the surface of the electron emitter 10 is not contaminated with a conventional gas in a vacuum, and the work function of electric field radiation as the electron emitter 10 is not affected. . In addition, the surface of the electron emitter 10 is not sputtered and contaminated. In addition, it is not necessary to flow a large current through the electron emitter 10 to perform electric field aging. Therefore, the direct current power supply 18 connected between the electronic emitter 10 and the anode is not as severe as the direct current power supply 18 used for conventional electric field aging. This is a groundbreaking method for stabilizing electron emission properties and lifetime characteristics for the electron emitter 10 because specifications are not required and electric field aging can be performed at low cost.
[0027] なお、電界蒸発による電界エージングの原理を説明すると、電子ェミッタ 10と電界ェ 一ジング用電極 16との対向距離を dとし、電界エージング電圧を Vageとすると、この 電子ェミッタ 10と電界エージング用電極 16との間の全体の平均電界 E1は、電界ェ 一ジング処理時では VageZdで与えられる。この場合、電子ェミッタ 10表面の微細 突起 14を構成する原子を飛び出させるのに必要な電界は VZnmオーダーであるこ とが必要とされている。このような場合において個々の微細突起 14に印加される局所 電界 E2は、フアウラノルドハイム（Fowler— Nordheim)の式における電界集中係数 βを用いて El (=VageZd) · βで与えられる。この βは微細突起 14の先端が鋭利 であるほど大きい値になるが約 1000程度以上であるから、電子ェミッタ 10には、 V/ nmオーダーの電界が微細突起 14表面に印加することができるように電界エージン グ電圧 Vageを設定することにより微細突起 14表面の原子を飛び出させて、微細突 起 14を電界蒸発させることができる。 [0027] It is to be noted that the principle of electric field aging by field evaporation is described. When the opposing distance between the electron emitter 10 and the electric field aging electrode 16 is d and the electric field aging voltage is Vage, the electron emitter 10 and electric field aging are The total average electric field E1 between the working electrode 16 and the electric field aging process is given by VageZd. In this case, the electric field necessary for causing the atoms constituting the fine protrusions 14 on the surface of the electron emitter 10 to jump out is required to be on the VZnm order. In such a case, the local electric field E2 applied to each fine protrusion 14 is given by El (= VageZd) · β using the electric field concentration factor β in the Fowler-Nordheim equation. This β becomes larger as the tip of the fine protrusion 14 becomes sharper, but is about 1000 or more. Therefore, the electron emitter 10 can apply an electric field of V / nm order to the surface of the fine protrusion 14. When the electric field aging voltage Vage is set to Origin 14 can be field evaporated.
産業上の利用可能性 Industrial applicability
本発明に力かる電界エージング方法は、電子ェミッタの電子放出物性と寿命特性と を安定ィ匕させる上で特に有用である。この電子ェミッタはフィールドェミッションランプ 等の電子デバイスに組み込んで用いることができる。 The electric field aging method useful for the present invention is particularly useful for stabilizing the electron emission physical properties and life characteristics of the electron emitter. This electronic emitter can be used by being incorporated in an electronic device such as a field emission lamp.
Claims
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| JP2008532984A JP4803760B2 (en) | 2006-09-04 | 2006-09-04 | Electron emitter field aging method |
| PCT/JP2006/317451 WO2008029440A1 (en) | 2006-09-04 | 2006-09-04 | Electric field aging method for electron emitter |
| TW095148887A TWI424458B (en) | 2006-09-04 | 2006-12-26 | Electric field aging treatment of electron emitters |
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| JPH04249827A (en) * | 1990-12-28 | 1992-09-04 | Sony Corp | Manufacture of field emission type cathode array |
| JP2002150929A (en) * | 2000-09-01 | 2002-05-24 | Canon Inc | Electron emitting element, electron source, and method of manufacturing image forming apparatus |
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| TW200605131A (en) * | 2004-04-15 | 2006-02-01 | Cdream Display Corp | Emitter structure with a protected gate electrode for an electron-emitting device |
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2006
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- 2006-09-04 JP JP2008532984A patent/JP4803760B2/en not_active Expired - Fee Related
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| JPH04249827A (en) * | 1990-12-28 | 1992-09-04 | Sony Corp | Manufacture of field emission type cathode array |
| JP2003536215A (en) * | 2000-06-07 | 2003-12-02 | モトローラ・インコーポレイテッド | Uniform emission current for field emission devices |
| JP2002150929A (en) * | 2000-09-01 | 2002-05-24 | Canon Inc | Electron emitting element, electron source, and method of manufacturing image forming apparatus |
| JP2003123650A (en) * | 2001-02-09 | 2003-04-25 | Canon Inc | Method of adjusting characteristics of electron source, method of manufacturing electron source, method of adjusting characteristics of image display device, and method of manufacturing image display device |
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| TW200828387A (en) | 2008-07-01 |
| TWI424458B (en) | 2014-01-21 |
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