WO2008015738A1 - Substrate inspection and repair device, and substrate evaluation system - Google Patents

Abstract

An inspection and repair device is provided with an inspecting unit for inspecting a defect of a substrate on which a TFT array is formed and a repairing unit for repairing a defective array, wherein the inspecting unit and the repairing unit are configured to carry out the defective inspection and the repair of the defect in the same chamber, respectively. With this structure, processes for movements of the substrate are simplified and data transmitting and receiving processes between the device and a central system server are also simplified. For further details, a first inspecting unit outputs pixel coordinates data of a defect portion and defect category data of the defect portion and the repairing unit repairs the detect portion in accordance with the pixel coordinates data of the defect portion and the defect category data detected by the first inspecting unit. A second inspecting unit inspects a driving state of every pixel unit of the TFT array on the substrate, outputs TFT array driving state data, and reinspects a state after the repair.

Description

 Specification

 Board inspection * Correction device and board evaluation system

 Technical field

 [0001] The present invention relates to a manufacturing process' inspection process of a TFT array substrate used for liquid crystal, organic EL, etc., and a substrate defect inspection, a device for correcting a defect detected by the defect inspection, and an inspection of the substrate defect 'The present invention relates to a substrate evaluation system that evaluates a substrate based on defect data and inspection data obtained by correction, and feeds back to the substrate manufacturing process based on the defect data and inspection data.

 Background art

 A TFT array is used as a switching element for selecting a pixel electrode of a liquid crystal display device or an organic EL display device, for example.

 In the manufacturing process of a semiconductor substrate on which a TFT array such as a liquid crystal substrate or an organic EL substrate is formed, as shown in FIG. 4, an inspection process (S100 ), A step of correcting a substrate defect found in the inspection step (S200), and a step of reinspecting the corrected defect (S300).

 [0004] Inspection of a TFT array substrate is not only provided as a TFT array substrate inspection process after the manufacturing process of the TFT array substrate, but may also be incorporated in the manufacturing process. In this TFT array substrate inspection, defects such as shorts, disconnections, and deposits are judged and classified on the TFT array generated on the TFT array substrate by determining the presence, position, type of defects, and the like. Yes.

 [0005] Defect detection of the TFT array can be performed by observing the display state of the liquid crystal or organic EL. When inspecting the TFT array by observing the display state, for example, in a liquid crystal panel, the TFT array It is necessary to inspect the liquid crystal display device in which the liquid crystal layer is sandwiched between the substrate and the counter electrode.

[0006] In addition, in order to inspect a semi-finished product that does not reach the liquid crystal display device, an inspection jig having a liquid crystal layer and a counter electrode is attached to the TFT array substrate, and a drive signal for detecting a defect is applied to the TFT array. For data processing such as input and comparing the voltage state at that time with a normal signal Therefore, defect data representing the position coordinates of the defect and the defect state is obtained.

[0007] Over this TFT array, the scanning line (gate line) and signal line (source line) are disconnected, the scanning line (gate line) and signal line (source line) are short-circuited, and the characteristics of the TFT that drives the pixel For defect inspections such as pixel defects due to defects, for example, the counter electrode is grounded, and a DC voltage of, for example, -15V to + 15V is applied to all or part of the gate line at a predetermined interval, and all or part of the source line is applied. This is done by applying an inspection signal to a part. (For example, the prior art of patent document 1.)

[0008] The defect data acquired by the defect detection is used for defect detection of each substrate, and by analyzing the defect data, the cause of the defect is clarified and fed back to the manufacturing process of the substrate.

 [0009] A device using an electron beam as a defect detection of a TFT array is known. In TFT array inspection using this electron beam, a pixel (ITO electrode) is irradiated with an electron beam while driving the TFT array, and secondary electrons emitted by this electron beam irradiation are detected according to the inspection pattern. By doing this, the voltage waveform applied to the pixel (ITO electrode) is changed to a secondary electron waveform and imaged by a signal, and the TFT array is electrically inspected.

 [0010] Each of these processes is performed by an independent apparatus such as a defect inspection apparatus, a defect correction apparatus, and the like. When these processes are performed on a substrate production line, these apparatuses are arranged in the order of processes, and the substrate is lined. It is done by transporting along.

 FIG. 5 is a schematic configuration diagram for explaining an apparatus configuration in conventional substrate inspection.

 In FIG. 5, the array inspection device 20 and the correction device 30 are arranged from upstream to downstream of the substrate line, and each device transmits and receives data to and from the host server 50.

 [0013] The substrate 100 on which the array is formed in the previous process is first put into the array inspection apparatus 20.

 The array inspection apparatus 20 performs an array inspection after performing alignment using the position data regarding the substrate obtained from the host server 50. In the array inspection, for example, the substrate surface is scanned using an input probe such as an electron beam, a defect inspection is performed based on the obtained detection signal, and the result of the defect inspection is transmitted to the host server 50. The substrate 100 is unloaded.

[0014] Next, the substrate 100 unloaded from the array inspection apparatus 20 is loaded into the correction apparatus 30. The correction device 30 acquires the result of the defect inspection from the host server 50, and based on the inspection data. Then, the defective part is corrected, the correction result is transmitted to the host server 50, and the board 100 is unloaded.

 [0015] The substrate 100 unloaded from the correction device 30 is loaded again into the array inspection device 20, and the correction state of the defective portion is confirmed.

 Patent Document 1: Japanese Patent Application Laid-Open No. 5-307192

 Disclosure of the invention

 Problems to be solved by the invention

 [0016] Conventionally, the array inspection device and the correction device are each configured as independent devices! Therefore, points related to substrate movement such as loading / unloading of the substrate into / from each device and alignment of the substrate in the device, There is a problem in terms of data transmission / reception between each device and the system server installed in the center.

 [0017] In terms of substrate movement, for example, the array inspection device and the correction device are independent devices. Therefore, it is necessary to carry in and out the substrate for each device, and each device evacuates the chamber. When the operation is required, the time required for evacuation and the time required for returning to the atmosphere are required, which increases the processing time.

 [0018] In addition to the problems related to loading / unloading of the substrate described above, each device needs to align the loaded substrate. For example, in the correction device, the position coordinates on the substrate in the array inspection device and the correction are corrected. There is also a problem with alignment that the position coordinates on the device need to be matched.

 [0019] In terms of data transmission / reception, in order to use the data acquired by each device, the device uploads and downloads data to a device that manages data prepared independently of each device. There is a problem that it is necessary to provide each device with a circuit for transmitting and receiving data.

[0020] For example, the array inspection apparatus uploads the defect result to the host server in advance, and the correction apparatus downloads the uploaded defect result data by the central system server (host server). It is necessary to make corrections based on the defect location and defect type obtained from the defect result data. [0021] In addition to the above-described problems, the conventional configuration of a series of processing required for a substrate such as inspection, defect classification, optical observation, correction, and re-inspection for the substrate is in the conventional configuration, inspection, defect classification, and optical The observation process must be performed by the inspection device, the subsequent correction must be performed by the correction device, and the re-inspection must be performed again by the inspection device. However, there is a problem that data must be converted between data formats that are set uniquely for each device.

[0022] As described above, in the conventional configuration, problems related to substrate movement, problems related to data transmission / reception performed between each device and a central system server, and a series of processes are individually performed. Including problems caused by doing it in an independent device. These problems lead to an increase in work volume, an excess of tact time, an increase in footprint (memory usage during operation), and an increase in cost.

 [0023] In particular, new devices have been developed, such as TFT array substrate power used in liquid crystal panels and organic EL panels, as the size of display devices increases, and driver driver ICs are mounted on the substrate. As the types of information obtained through defect inspection and defect correction are complicated and the amount of data is expected to increase, the importance of the above problems is expected to increase.

 In view of the above, an object of the present invention is to solve the above-described problems, simplify a process related to substrate movement, and simplify a data transmission / reception process performed between the apparatus and a central system server. And

 Means for solving the problem

 A substrate inspection / correction apparatus according to the present invention includes an inspection unit that performs defect inspection of a substrate on which a TFT array is formed, and a correction unit that corrects the defect array, and the inspection chamber and the correction unit include the same chamber. The configuration that performs defect inspection and defect correction on the board simplifies the process related to the movement of the board, and simplifies the process of sending and receiving data between the device and the central system server. .

More specifically, the inspection unit of the present invention detects a defective part in a predetermined region of the substrate, outputs pixel coordinate data of the defective part, classifies the defect type of the defective part, and provides defect type data. The A first inspecting unit for outputting, and a second inspecting unit for inspecting a driving state of the TFT array in pixel units of the substrate and outputting driving state data of the TFT array.

 [0027] The first inspection unit of the present invention detects a defective part of the substrate, outputs pixel coordinate data of the defective part, and optically observes the defect detection part and the defective part detected by the defect detection part. A defect type confirmation unit for confirming the classification of the defect type of the defective part and outputting the defect type data, inspecting the introduced uncorrected substrate, and detecting the pixel of the defective part existing on the substrate Coordinate data and defect type data are acquired.

 [0028] It should be noted that the detection of the defective portion of the substrate by the first inspection unit may be performed by detecting a secondary electron emitted from the substrate force by an electron beam applied to a predetermined region of the substrate, a femtosecond laser, or a semiconductor wavelength. Various detection forms such as a form in which a substrate is irradiated with excitation light such as a variable laser to excite the substrate and a change in the substrate state obtained by this excitation is detected can be applied.

 [0029] The correction unit of the present invention includes a laser light source, and is based on the pixel coordinate data of the defective part detected by the first inspection unit by the laser light emitted by the laser light source and the defect type data of the confirmed defect type. Then, cutting or local film formation or both are performed at the defective portion.

 [0030] Further, the second inspection unit of the present invention reinspects the corrected part of the substrate after being corrected by the correction unit, and comes into contact with the pixel of the substrate and detects the potential of the pixel. A contact type probe, and based on the pixel coordinate data of the part corrected by the correction unit, the potential of the corrected pixel is detected by bringing the contact type probe into contact with the pixel on the board, and both corrections are defective. Determine.

 [0031] Further, the substrate evaluation system of the present invention includes the above-described substrate inspection 'correction device, and includes pixel coordinate data and defect type data of the defect site obtained by the first inspection unit, and pixel coordinates of the corrected pixel by the correction unit. The data and correction content data and the correction result data obtained by the second inspection unit are fed to a plurality of boards, and the evaluation data of the board production line obtained by statistical processing is fed back to the production line.

According to the substrate inspection / correction apparatus aspect of the present invention, the TFT drive state after the correction is re-inspected by removing the corrected substrate from the correction apparatus and introducing it again into the inspection apparatus. In addition, there is no need to move the substrate, align the alignment after re-introducing it into the inspection device, or position the inspection part. It is possible to perform a series of processes of packaging and re-inspection all at once.

 [0033] Also, according to the aspect of the board inspection and correction apparatus of the present invention, the evaluation result obtained by the inspection apparatus is directly referred to the evaluation result without being uploaded to and downloaded from the central system server. Therefore, the amount of work and the takt time can be reduced.

 [0034] In addition, the first inspection unit that inspects the substrate before correction, the correction unit of the substrate, and the second inspection unit that re-inspects the substrate after correction are provided in one chamber, so that introduction of the substrate and In addition to shortening the tact time by opening and closing the gate required for unloading and the intake and exhaust of the chamber, the footprint can be shortened by sharing data among the various parts. Further, the number of operators can be reduced.

 [0035] When board evaluation is performed using a conventional configuration, the inspection process, the correction process, and the re-inspection process are performed individually by each device. According to the substrate evaluation system of the present invention, since the pixel coordinate data and TFT driving state in each process can be statistically evaluated collectively, it is necessary for feedback to the process before the inspection process. Time can be reduced. By shortening the feedback time, it is possible to reduce the time required for improvement by reflecting the substrate evaluation in the previous process, and the substrate yield can be improved.

 The invention's effect

 [0036] According to the present invention, it is possible to simplify the process related to the movement of the substrate and to simplify the process of transmitting and receiving data between the apparatus and the central system server.

 Brief Description of Drawings

 [0037] FIG. 1 is a schematic diagram for explaining the configuration of a substrate inspection / correction apparatus of the present invention and a substrate evaluation system of the present invention.

 FIG. 2 is a flowchart for explaining the processing operation of the substrate inspection 'correcting apparatus 1 according to the present invention.

[FIG. 3] Comparison of processing such as tact time between the substrate inspection / correction device of the present invention and the conventional configuration FIG.

 FIG. 4 is a flowchart for explaining a manufacturing process of a semiconductor substrate.

 FIG. 5 is a schematic configuration diagram for explaining an apparatus configuration in conventional substrate inspection. Explanation of symbols

 [0038] 1 ... Board inspection · Correction device, 2 ... Inspection unit, 2A ... First inspection unit 2, 2A1 ... Defect detection unit, 2A2 ... Defect type confirmation unit, 2B ... Second inspection unit, 2a ... Electron beam Source, 2b ... Femtosecond laser, 2c ... Semiconductor tunable laser, 2d ... Defect, 2e ... Micro CCD camera, 2f ... Contact microprobe, 2g ... Voltage application unit, 3 ... Correction unit, 3A ... Cut, Local Deposition unit, 3a ... laser light source, 4 ... channo, 5 ... host server, 6 ... pre-process, 10 ... substrate evaluation system. BEST MODE FOR CARRYING OUT THE INVENTION

Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings.

FIG. 1 is a schematic diagram for explaining the configuration of the substrate inspection / correction device of the present invention and the substrate evaluation system of the present invention. In FIG. 1, a substrate inspection / correction device 1 of the present invention is configured to include an inspection unit 2 and a correction unit 3 in a chamber 4, and the substrate evaluation system 10 of the present invention is obtained by the substrate inspection / correction device 1. It has a configuration that feeds back the received data to the previous process.

 [0041] In a semiconductor substrate such as a liquid crystal substrate used in a liquid crystal display panel and an organic EL substrate used in an organic EL display panel, the components necessary for liquid crystal display and organic EL display are arranged on these substrates. A TFT array is provided for driving. The TFT array is provided with a TFT provided in units of pixels of each pixel and various lines (for example, a gate line, a source line, a common line, etc.) for driving the TFT.

 In the present invention, when a substrate is manufactured by line production, each of these elements and a TFT array are formed on the substrate in the preceding step 6 mm in the figure, and the substrate inspection / correction device 1 is used. Then, the defect inspection of the TFT array etc. formed on the substrate is performed, the detected defect part is corrected, the corrected part is re-inspected to confirm the correction, and the next process is performed.

 It is assumed that the defect detected by the substrate inspection / correction device 1 is caused by the previous process 6.

Therefore, the substrate evaluation system 10 according to the present invention uses the defect data such as the position data indicating the coordinate position of the defect on the substrate detected by the substrate inspection and correction device 1 and the defect type data indicating the type of defect. Data is statistically obtained from the inspection results of multiple substrates, and this defect data capability

Evaluate the cause of defects in 6 and feed back to previous process 6.

 Hereinafter, the inspection unit 2 and the correction unit 3 provided in the chamber 4 of the substrate inspection and correction apparatus 1 of the present invention will be described.

 [0045] The inspection unit 2 of the present invention includes a first inspection unit 2A and a second inspection unit 2B. The first inspection unit 2A is a part that inspects defects contained in the substrate 100 put into the chamber 4 from the previous process 6 and detects the position and type of the defect part. A defect detection unit 2A1 for detecting the position and a defect type confirmation unit 2A2 for confirming the type of defect are provided.

 The defect detection unit 2A1 can use various forms. Here, examples of the types of defects detected by the defect detection unit 2A1 include line defects and point defects. Among these, examples of the line defect include a state where the source line is open (cut), a state where the gate line is open (cut), and a state where the source line and the gate line are short (short). Examples of point defects include a state where the drain line is open (cut), a state where the source line and the common line are short (short circuit), and a state where the drain line and the common line are short (short circuit). Note that the open state and the short state are not necessarily limited to a completely disconnected state or a completely shorted state, but also include cases in which an intermediate state between a disconnected state and a connected state is included.

 [0047] It is usually unknown at which position on the substrate 100 the defect exists, and even if the position of the defect is predicted in advance, the position is expected to have a spread. Therefore, in the first inspection unit 2A, it is necessary to scan the entire region on the substrate or a region having a certain extent to detect a defective part. Therefore, the defect detection unit 2A1 detects the defect position and defect type of the defect existing in the region on the substrate 100.

[0048] As one form of the defect detection unit 2A1 that detects a substrate defect in a non-contact manner, an electron beam is irradiated from the electron beam source 2a as an input probe to the substrate, and the substrate force is also emitted by the irradiation of the electron beam. Secondary electrons are detected by the detector 2d.

[0049] Since the secondary electrons emitted by the electron beam irradiation are determined by the potential of the TFT of the substrate, the amount of detected secondary electrons is compared with the amount of secondary electrons in the normal state to determine defects. The presence or absence of the electron beam irradiation position can be determined. The defect type can be determined by selecting the signal pattern to be applied to the TFT array.

 [0050] As another form of the defect detection unit 2A1 for detecting a defect on the substrate in a non-contact manner, there is a configuration in which the substrate is excited by an excitation source and the excited state is detected by the detector 2d. In FIG. 1, the same detector 2d is shown as the detector. The detector that detects the secondary electrons and the detector that detects the excited state are not necessarily the same detector. Is provided. As an excitation source for exciting the substrate 100, for example, a femtosecond laser 2b or a semiconductor wavelength tunable laser 2c can be used.

 [0051] The defect site and the normal site on the substrate 100 are in different excited states. By detecting these different excited states, the position of the defect site and the type of defect are obtained. Note that there are various physical properties such as temperature and refractive index as the physical characteristics representing the excited state in the substrate, and they can be appropriately selected as necessary.

 [0052] The defect type confirmation unit 2A2 is detected by the defect detection unit 2A1, classified, and the defect type is confirmed for the defect type. The defect type classification by the defect detection unit 2A1 is determined based on, for example, the intensity of the detection signal and the signal pattern applied to the TFT array, and may include an error, and is determined as an incorrect defect type. There is a case. Therefore, the defect type confirmation unit 2A2 confirms the defect before the modification unit 3 corrects the defective part. This defect type is confirmed by, for example, optical observation with an image captured by an optical observation system such as a micro CCD camera 2e. This optical observation can be performed by visual observation of a captured image.

 [0053] The correction unit 3 identifies a defective site based on the position data of the defective site detected by the first inspection unit 2A, and is also based on the defect type data of the defective site detected by the first inspection unit 2A. And make corrections based on the defect type. As the correction unit 3, for example, a cutting / local film forming unit 3A can be used. For example, if the defect is in an open state, the local film forming unit 3A performs film formation on the part, and if the defect is in a short state, the defect is corrected by cutting the part. To do. For example, a laser light source 3a can be used as the cut / local film forming unit 3A.

Next, the first inspection unit 2B reinspects the defective part corrected by the correction unit 3 and verifies the correction state. The first inspection unit 2B is intended to verify the correction of the defective part. Therefore, a re-inspection unit 2B1 that performs inspection in units of pixels is provided. This reinspection unit 2B1 can use, for example, a contact type microprobe 2f. The contact-type microprobe 2f inspects the driving state of the TFT by directly detecting the potential signal of each pixel to be inspected as a unit.

It should be noted that when the defect detection unit 2A1 and the reinspection unit 2B1 inspect the driving state of the TFT, it is necessary to apply a signal of a predetermined inspection pattern to the TFT array. Therefore, the inspection unit 2 includes a voltage application unit 2g, which applies a signal of a predetermined inspection pattern to the TFT array.

 [0056] In the above configuration, for example, the substrate 100 carried into the chamber 4 remains mounted on a stage (not shown), and detection and correction of a defective portion by the first inspection unit 2A is performed. Since it is possible to correct the defective part detected by the part 3 and verify the corrected part by the second inspection part, it is not necessary to carry out the substrate 100 from the chamber 4 or re-into the chamber 4. Can do.

 [0057] Further, in the defect type confirmation unit 2A2, the coordinate data of the defect part detected by the defect detection part 2A1 is used as it is as the position coordinates of the defect part when the defect type of the defect part is optically observed. Therefore, it is not necessary to transfer data to the external host server 5 at this stage.

 [0058] In the correction unit 3, the position coordinates of the defective part and the type of the defect when correcting the defect of the defective part are the coordinate data of the defective part detected by the first inspection unit 2A and the defect. Since the seed data can be used as it is, it is not necessary to transfer data to the external host server 5 at this stage.

 [0059] Data transfer to the host server 5 can be performed only once after each processing of the first inspection unit 2A, the correction unit 3, and the second inspection unit 2B is completed.

 FIG. 2 is a flowchart for explaining the processing operation of the substrate inspection and correction apparatus 1 of the present invention.

[0061] First, the substrate 100 on which the array has been formed in the previous step 6 is put into the chamber 4 of the substrate inspection / correction device 1 (Sl). Align to the reference position in chamber 4 by alignment operation. This alignment is sent from the host server 5 to the board dimensions and board Acquire substrate data such as the position and dimensions of the formed pixels (S 2), and align the substrate 100 with the reference position of the inspection scanning system based on the acquired substrate data (S 3)

[0062] After alignment, the substrate surface is scanned to obtain a detection signal. This scanning can be performed by detecting a potential state when an inspection signal pattern is applied to the TFT array. For example, when an electron beam is used as an input probe, the potential state is detected by scanning the electron beam and moving a stage (not shown) that supports the substrate. This can be done by changing the position. In addition to the non-contact type electron beam 2a as described above, the substrate scanning can use an excitation source such as a femtosecond laser 2b or a semiconductor wavelength tunable laser 2c (S4).

 [0063] The detection signal obtained by scanning the substrate is analyzed to evaluate the defect on the substrate (S5). If there is a defect on the substrate, the defect type is classified (S6), and the microscopic CCD camera 2e The defect type is confirmed by an optical observation system such as (S7).

 [0064] The defect type is confirmed (S8), and if it is determined that the defect can be corrected, the laser light source 3a or the like is used to perform a cutting process if it is in a short state, or a film if it is in an open state. Perform defect correction such as processing (S9).

 [0065] After the defect is corrected, an inspection signal pattern is applied to the TFT array, the contact type microprobe 2f is applied to the corrected portion, and the potential of the portion is detected to perform reinspection (S10).

 [0066] If it is determined in S8 that the correction is impossible, and after the re-inspection of S10 is completed, the data related to these corrections, the coordinate position data of the defective part, the defect type data, etc. Data processing is performed (S11), and after transferring the data to the host server 5 (S12), the substrate 100 is also unloaded from the chamber 4 (S13). According to the configuration of the present invention, since the re-inspection is completed in the second inspection unit 2B, it is not necessary to carry in the substrate in order to perform the inspection again as in the past. Can

FIG. 3 is a diagram for comparing processing such as tact time between the substrate inspection / correction apparatus of the present invention and the conventional configuration. FIG. 3 (a) shows the flow of processing by the conventional configuration, and FIG. 3 (b) shows the flow of processing by the substrate inspection and correction apparatus of the present invention. [0068] In the conventional configuration shown in FIG. 3 (a), the loading process for loading the substrate into the array device, the correction device, and the re-inspection device is required three times, and each device force is also required to carry out the substrate. The unloading process is required 3 times. In addition, after loading the substrate into each device, alignment is required three times to align with the reference position of each device.

 [0069] On the other hand, in the board inspection 'correcting device 1 of the present invention shown in Fig. 3 (b), the board is only put into one chamber, so both the loading process and the unloading process are performed only once. I can finish it. In addition, once the substrate is loaded into each device, the alignment for aligning with the reference position of each device only needs to be performed once, so the tact time can be shortened.

[0070] In addition, the acquisition of data related to the board and the transmission of data acquired by the device with the host server are performed three times in total because the conventional configuration needs to be performed for each device. Thus, the substrate inspection / correction apparatus of the present invention can be performed only once, and the footprint amount (memory usage during operation) required for data processing can be reduced.

 In the above example, the substrate inspection uses an excitation source such as a non-contact electron beam, a femtosecond laser, or a semiconductor wavelength tunable laser. However, the present invention is not limited to this example, and another inspection means is used. May be. Further, the correction is not limited to the laser light source, and other correction means may be used.

 [0072] Also in the re-inspection, not only the contact type microprobe but also a detection means using electromagnetic waves may be used.

 Industrial applicability

The present invention can be applied not only to a liquid crystal substrate and an organic EL substrate, but also to a semiconductor substrate.

Claims

The scope of the claims  [1] An inspection unit for inspecting defects on the substrate on which the TFT array is formed,  A correction unit for correcting the defect array,  The apparatus for inspecting and correcting a substrate, wherein the inspection unit and the correction unit perform defect inspection and defect correction of the substrate in the same chamber.  [2] The inspection unit includes: A first inspection unit that detects a defective part in a predetermined region of the substrate, outputs pixel coordinate data of the defective part, classifies a defect type of the defective part, and outputs defect type data; and a pixel unit of the substrate characterized in that it comprises a second inspection unit that outputs the driving status data of the _TFT array inspecting the drive state of the _TFT array substrate inspecting 'adjustment device described in claim 1. [3] The first inspection unit includes:  Detecting a defective part of the substrate by irradiating a predetermined region of the substrate with an electron beam or excitation light, outputting pixel coordinate data of the defective part, and a defect detecting unit;  The defect type confirmation unit according to claim 2, further comprising: a defect type confirmation unit that confirms the classification of the defect type of the defect site by optical observation of the defect site detected by the defect detection unit and outputs defect type data. PCB inspection and correction equipment. 4. The substrate inspection / correction device according to claim 3, wherein the excitation light of the first inspection unit is a femtosecond laser or a semiconductor wavelength tunable laser. [5] The second inspection unit includes a contact probe that contacts a pixel of the substrate and detects a potential of the pixel, and is based on the pixel coordinate data of the part corrected by the correction unit. 3. The substrate inspection / correction device according to claim 2, wherein a contact type probe is brought into contact with the pixel.  [6] The correction unit includes a laser light source, and based on the pixel coordinate data detected by the first inspection unit with the laser light emitted by the laser light source and the confirmed defect type data, the defect is cut or locally formed. 3. The substrate inspection / correction device according to claim 2, wherein the inspection or correction device performs the film or both. [7] The substrate inspection and correction device according to any one of claims 1 to 6, The pixel coordinate data and defect type data of the defective part obtained by the first inspection unit, the pixel coordinate data and correction content data of the corrected pixel by the correction unit, and the correction result data obtained by the second inspection unit. A board evaluation system that feeds back evaluation data of a board production line obtained by statistical processing of a plurality of boards to the production line.