WO2008002970A3 - Silsesquioxane resin systems with base additives bearing electron-attracting functionalities - Google Patents
Silsesquioxane resin systems with base additives bearing electron-attracting functionalities Download PDFInfo
- Publication number
- WO2008002970A3 WO2008002970A3 PCT/US2007/072222 US2007072222W WO2008002970A3 WO 2008002970 A3 WO2008002970 A3 WO 2008002970A3 US 2007072222 W US2007072222 W US 2007072222W WO 2008002970 A3 WO2008002970 A3 WO 2008002970A3
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- functionalities
- attracting
- resin systems
- silsesquioxane resin
- silsesquioxane
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Ceased
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K5/00—Use of organic ingredients
- C08K5/54—Silicon-containing compounds
- C08K5/541—Silicon-containing compounds containing oxygen
- C08K5/5435—Silicon-containing compounds containing oxygen containing oxygen in a ring
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B27/00—Layered products comprising a layer of synthetic resin
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K5/00—Use of organic ingredients
- C08K5/04—Oxygen-containing compounds
- C08K5/15—Heterocyclic compounds having oxygen in the ring
- C08K5/151—Heterocyclic compounds having oxygen in the ring having one oxygen atom in the ring
- C08K5/1545—Six-membered rings
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
- C08L83/00—Compositions of macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon only; Compositions of derivatives of such polymers
- C08L83/04—Polysiloxanes
- C08L83/06—Polysiloxanes containing silicon bound to oxygen-containing groups
Landscapes
- Chemical & Material Sciences (AREA)
- Health & Medical Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Medicinal Chemistry (AREA)
- Polymers & Plastics (AREA)
- Organic Chemistry (AREA)
- Silicon Polymers (AREA)
- Materials For Photolithography (AREA)
- Compositions Of Macromolecular Compounds (AREA)
- Drying Of Semiconductors (AREA)
Abstract
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2009518532A JP5085649B2 (en) | 2006-06-28 | 2007-06-27 | Silsesquioxane resin system containing basic additives with electron withdrawing groups |
| US12/304,263 US8524439B2 (en) | 2006-06-28 | 2007-06-27 | Silsesquioxane resin systems with base additives bearing electron-attracting functionalities |
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US80609106P | 2006-06-28 | 2006-06-28 | |
| US60/806,091 | 2006-06-28 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| WO2008002970A2 WO2008002970A2 (en) | 2008-01-03 |
| WO2008002970A3 true WO2008002970A3 (en) | 2008-04-10 |
Family
ID=38846501
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| PCT/US2007/072222 Ceased WO2008002970A2 (en) | 2006-06-28 | 2007-06-27 | Silsesquioxane resin systems with base additives bearing electron-attracting functionalities |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US8524439B2 (en) |
| JP (1) | JP5085649B2 (en) |
| KR (1) | KR101216060B1 (en) |
| TW (1) | TWI435894B (en) |
| WO (1) | WO2008002970A2 (en) |
Families Citing this family (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR101293937B1 (en) * | 2006-06-28 | 2013-08-09 | 다우 코닝 코포레이션 | Silsesquioxane resin systems with base additives bearing electron-attracting functionalities |
| JP4890153B2 (en) * | 2006-08-11 | 2012-03-07 | 東京応化工業株式会社 | Resist composition and resist pattern forming method |
| CN101970209A (en) * | 2008-01-31 | 2011-02-09 | 昭和电工株式会社 | Process for forming concavo-convex patterns, and process for manufacturing magnetic recording media using the same |
| EP2250215B1 (en) * | 2008-03-05 | 2020-03-25 | Dow Silicones Corporation | Silsesquioxane resins |
| CN102439069B (en) * | 2009-07-23 | 2014-11-05 | 道康宁公司 | Methods and materials for reverse patterning |
| WO2011011140A2 (en) * | 2009-07-23 | 2011-01-27 | Dow Corning Corporation | Method and materials for double patterning |
| JP5610567B2 (en) * | 2010-02-23 | 2014-10-22 | 昭和電工株式会社 | Resist sensitivity improvement method |
| KR102217399B1 (en) * | 2016-05-03 | 2021-02-24 | 다우 실리콘즈 코포레이션 | Silsesquioxane resin and silyl-anhydride composition |
| WO2017192345A1 (en) * | 2016-05-03 | 2017-11-09 | Dow Corning Corporation | Silsesquioxane resin and oxaamine composition |
| WO2017218286A1 (en) | 2016-06-16 | 2017-12-21 | Dow Corning Corporation | Silicon-rich silsesquioxane resins |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20040137241A1 (en) * | 2003-01-08 | 2004-07-15 | International Business Machines Corporation | Patternable low dielectric constsnt materials and their use in ULSI interconnection |
| WO2005007747A2 (en) * | 2003-07-03 | 2005-01-27 | Dow Corning Corporation | Photosensitive silsesquioxane resin |
| WO2005040918A2 (en) * | 2003-10-24 | 2005-05-06 | International Business Machines Corporation | Low-activation energy silicon-containing resist system |
Family Cites Families (48)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3615272A (en) * | 1968-11-04 | 1971-10-26 | Dow Corning | Condensed soluble hydrogensilsesquioxane resin |
| JPS59178749A (en) | 1983-03-30 | 1984-10-11 | Fujitsu Ltd | Wiring structure |
| JPS6086017A (en) | 1983-10-17 | 1985-05-15 | Fujitsu Ltd | Production of polyhydrogen silsesquioxane |
| JPS63107122A (en) | 1986-10-24 | 1988-05-12 | Fujitsu Ltd | Flattening method for irregular substrate |
| US5290899A (en) | 1988-09-22 | 1994-03-01 | Tosoh Corporation | Photosensitive material having a silicon-containing polymer |
| US5045592A (en) | 1989-07-28 | 1991-09-03 | Dow Corning Corporation | Metastable silane hydrolyzates |
| US4999397A (en) * | 1989-07-28 | 1991-03-12 | Dow Corning Corporation | Metastable silane hydrolyzates and process for their preparation |
| US5085893A (en) | 1989-07-28 | 1992-02-04 | Dow Corning Corporation | Process for forming a coating on a substrate using a silsesquioxane resin |
| US5010159A (en) * | 1989-09-01 | 1991-04-23 | Dow Corning Corporation | Process for the synthesis of soluble, condensed hydridosilicon resins containing low levels of silanol |
| US5063267A (en) | 1990-11-28 | 1991-11-05 | Dow Corning Corporation | Hydrogen silsesquioxane resin fractions and their use as coating materials |
| US5385804A (en) | 1992-08-20 | 1995-01-31 | International Business Machines Corporation | Silicon containing negative resist for DUV, I-line or E-beam lithography comprising an aromatic azide side group in the polysilsesquioxane polymer |
| JP2547944B2 (en) | 1992-09-30 | 1996-10-30 | インターナショナル・ビジネス・マシーンズ・コーポレイション | Method of forming sub-half micron pattern by optical lithography using a bilayer resist composition |
| JP3153367B2 (en) | 1992-11-24 | 2001-04-09 | ダウ・コ−ニング・コ−ポレ−ション | Molecular weight fractionation method for polyhydrogensilsesquioxane |
| TW397936B (en) | 1994-12-09 | 2000-07-11 | Shinetsu Chemical Co | Positive resist comosition based on a silicone polymer containing a photo acid generator |
| JP4024898B2 (en) * | 1997-03-17 | 2007-12-19 | 株式会社東芝 | Silicon composition, pattern forming method using the same, and electronic component manufacturing method |
| WO1999009457A1 (en) | 1997-08-14 | 1999-02-25 | Showa Denko K.K. | Resist resin, resist resin composition, and process for patterning therewith |
| JP3120402B2 (en) | 1998-09-03 | 2000-12-25 | インターナショナル・ビジネス・マシーンズ・コーポレ−ション | Photoresist composition containing passivated aromatic amine compound |
| US6087064A (en) | 1998-09-03 | 2000-07-11 | International Business Machines Corporation | Silsesquioxane polymers, method of synthesis, photoresist composition, and multilayer lithographic method |
| JP2000143810A (en) * | 1998-11-18 | 2000-05-26 | Dow Corning Asia Ltd | Preparation of hydrogen silsesquioxane resin |
| US6210856B1 (en) | 1999-01-27 | 2001-04-03 | International Business Machines Corporation | Resist composition and process of forming a patterned resist layer on a substrate |
| JP4557328B2 (en) | 1999-02-01 | 2010-10-06 | 富士フイルム株式会社 | Positive photoresist composition |
| KR100421034B1 (en) | 1999-04-21 | 2004-03-04 | 삼성전자주식회사 | Resist composition and fine pattern forming method using the same |
| US6319650B1 (en) | 2000-02-25 | 2001-11-20 | International Business Machines Corporation | High resolution crosslinkable photoresist composition, compatable with high base concentration aqueous developers method and for use thereof |
| US6531260B2 (en) | 2000-04-07 | 2003-03-11 | Jsr Corporation | Polysiloxane, method of manufacturing same, silicon-containing alicyclic compound, and radiation-sensitive resin composition |
| US6399210B1 (en) | 2000-11-27 | 2002-06-04 | Dow Corning Corporation | Alkoxyhydridosiloxane resins |
| US20020081520A1 (en) | 2000-12-21 | 2002-06-27 | Ratnam Sooriyakumaran | Substantially transparent aqueous base soluble polymer system for use in 157 nm resist applications |
| US7261992B2 (en) * | 2000-12-21 | 2007-08-28 | International Business Machines Corporation | Fluorinated silsesquioxane polymers and use thereof in lithographic photoresist compositions |
| US6444495B1 (en) | 2001-01-11 | 2002-09-03 | Honeywell International, Inc. | Dielectric films for narrow gap-fill applications |
| JP3757264B2 (en) | 2001-03-27 | 2006-03-22 | 独立行政法人産業技術総合研究所 | Silsesquioxane-based polymer molded body and method for producing the same |
| JP2002311591A (en) * | 2001-04-18 | 2002-10-23 | Clariant (Japan) Kk | Photosensitive composition used for forming interlayer dielectric |
| JP2003020335A (en) | 2001-05-01 | 2003-01-24 | Jsr Corp | Polysiloxane and radiation-sensitive resin composition |
| TW594416B (en) | 2001-05-08 | 2004-06-21 | Shipley Co Llc | Photoimageable composition |
| DE10137109A1 (en) | 2001-07-30 | 2003-02-27 | Infineon Technologies Ag | Photoresist for lithographic techniques, e.g. structuring silicon wafers, comprises a solution of organopolysiloxane with carbon side chains containing acid-labile groups attached to highly polar groups |
| US20030152784A1 (en) * | 2002-01-30 | 2003-08-14 | Deis Thomas A. | Process for forming hydrogen silsesquioxane resins |
| US6737117B2 (en) | 2002-04-05 | 2004-05-18 | Dow Corning Corporation | Hydrosilsesquioxane resin compositions having improved thin film properties |
| JP2003345026A (en) | 2002-05-24 | 2003-12-03 | Tokyo Ohka Kogyo Co Ltd | Coating liquid composition for formation of antireflection film, photoresist laminate by using the same, and method for forming photoresist pattern |
| US20040033440A1 (en) | 2002-08-09 | 2004-02-19 | Kazunori Maeda | Photoacid generators, chemically amplified positive resist compositions, and patterning process |
| JP4189951B2 (en) | 2002-10-31 | 2008-12-03 | 東京応化工業株式会社 | Chemically amplified positive resist composition |
| KR20040044368A (en) | 2002-11-20 | 2004-05-28 | 쉬플리 캄파니, 엘.엘.씨. | Multilayer photoresist systems |
| WO2004055598A1 (en) | 2002-12-02 | 2004-07-01 | Tokyo Ohka Kogyo Co., Ltd. | Chemical amplification type silicone base positive photoresist composition |
| US20040229159A1 (en) | 2003-02-23 | 2004-11-18 | Subbareddy Kanagasabapathy | Fluorinated Si-polymers and photoresists comprising same |
| JP3925448B2 (en) | 2003-03-31 | 2007-06-06 | Jsr株式会社 | Silicon-containing compound, polysiloxane and radiation-sensitive resin composition |
| JP4114064B2 (en) | 2003-05-27 | 2008-07-09 | 信越化学工業株式会社 | Silicon-containing polymer compound, resist material, and pattern forming method |
| JP2004354417A (en) | 2003-05-27 | 2004-12-16 | Shin Etsu Chem Co Ltd | Positive resist material and pattern forming method using the same |
| US20050106494A1 (en) | 2003-11-19 | 2005-05-19 | International Business Machines Corporation | Silicon-containing resist systems with cyclic ketal protecting groups |
| US20050215713A1 (en) | 2004-03-26 | 2005-09-29 | Hessell Edward T | Method of producing a crosslinked coating in the manufacture of integrated circuits |
| KR100660016B1 (en) * | 2005-02-18 | 2006-12-20 | 삼성전자주식회사 | Photosensitive resin, photoresist composition comprising the same and photoresist pattern forming method using the same |
| KR101490483B1 (en) | 2008-09-05 | 2015-02-05 | 삼성디스플레이 주식회사 | Liquid Crystal Display |
-
2007
- 2007-06-27 US US12/304,263 patent/US8524439B2/en active Active
- 2007-06-27 WO PCT/US2007/072222 patent/WO2008002970A2/en not_active Ceased
- 2007-06-27 KR KR1020097000432A patent/KR101216060B1/en not_active Expired - Fee Related
- 2007-06-27 JP JP2009518532A patent/JP5085649B2/en active Active
- 2007-06-28 TW TW096123481A patent/TWI435894B/en active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20040137241A1 (en) * | 2003-01-08 | 2004-07-15 | International Business Machines Corporation | Patternable low dielectric constsnt materials and their use in ULSI interconnection |
| WO2005007747A2 (en) * | 2003-07-03 | 2005-01-27 | Dow Corning Corporation | Photosensitive silsesquioxane resin |
| WO2005040918A2 (en) * | 2003-10-24 | 2005-05-06 | International Business Machines Corporation | Low-activation energy silicon-containing resist system |
Also Published As
| Publication number | Publication date |
|---|---|
| WO2008002970A2 (en) | 2008-01-03 |
| US20090312467A1 (en) | 2009-12-17 |
| KR20090038424A (en) | 2009-04-20 |
| TW200811224A (en) | 2008-03-01 |
| KR101216060B1 (en) | 2012-12-28 |
| JP5085649B2 (en) | 2012-11-28 |
| US8524439B2 (en) | 2013-09-03 |
| JP2009542859A (en) | 2009-12-03 |
| TWI435894B (en) | 2014-05-01 |
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