[go: up one dir, main page]

WO2008002045A1 - Procédé de formation de motifs prédéterminés sur une plaquette par gravure directe avec des faisceaux de particules neutres - Google Patents

Procédé de formation de motifs prédéterminés sur une plaquette par gravure directe avec des faisceaux de particules neutres Download PDF

Info

Publication number
WO2008002045A1
WO2008002045A1 PCT/KR2007/003068 KR2007003068W WO2008002045A1 WO 2008002045 A1 WO2008002045 A1 WO 2008002045A1 KR 2007003068 W KR2007003068 W KR 2007003068W WO 2008002045 A1 WO2008002045 A1 WO 2008002045A1
Authority
WO
WIPO (PCT)
Prior art keywords
wafer
plasma
particle beam
neutral particle
mask
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/KR2007/003068
Other languages
English (en)
Inventor
Suk-Jae Yoo
Bong-Ju Lee
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Korea Basic Science Institute KBSI
Original Assignee
Korea Basic Science Institute KBSI
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Korea Basic Science Institute KBSI filed Critical Korea Basic Science Institute KBSI
Publication of WO2008002045A1 publication Critical patent/WO2008002045A1/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • H10P50/242—
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2037—Exposure with X-ray radiation or corpuscular radiation, through a mask with a pattern opaque to that radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3174—Particle-beam lithography, e.g. electron beam lithography

Definitions

  • the present invention relates to a method for forming predetermined patterns on a wafer. More particularly, the present invention relates to a method for forming predetermined patterns on a wafer by direct etching with neutral particle beams.
  • optical lithography Conventional methods that have been widely used for lithography is optical lithography, which is shown in Fig. 1.
  • Such an optical lithography comprises an exposure step of exposing to a light a resist 30 formed on a wafer 20 which are masked by a proximately positioned mask 10 having a patterned image thereon, and a developing step of etching the exposed region (or unexposed region) with a developing solution.
  • the theoretical resolution of the optical lithography is determined by Formula 1:
  • NGL Next Generation Lithography
  • optical sources such as EUV (Extreme Ultraviolet, wavelength: 10 - 100 nm) or X-ray
  • particle beam sources such as electron beam or ion beam.
  • An exemplary technology of EUVL is to form an image on the wafer using light source with 13.5 nm wavelength and a mask with a magnification ratio of 4.
  • EUVL is a potential NGL source that is currently being developed with much worldwide interest, it uses a reflective mirror instead of an optical lens system. As a result, markedly low reflecting efficiency of the reflective mirror will continue to make developing a new EUV source difficult.
  • PXL Proximity X-ray Lithography
  • X-ray with a wavelength of 1.3 nm is used for lithography through a mask located at a proximity of a wafer with a patterned image thereon.
  • this method has the disadvantage of requiring a mask having a high resolution image thereon.
  • the wavelength of particle beams could be substantially reduced by controlling the particle mass and the particle velocity.
  • the wavelength of an electron with 100 keV is just 0.004 nm.
  • the electron is much more favorable than the photon.
  • PEL Proximity Electronic-beam Lithography
  • EPL Electro-beam Projection Lithography
  • U.S. Patent No. 5,894,058 discloses a method of forming a fine pattern on the wafer.
  • the patented method comprises directly distributing multiple fine particles, each of which works as a shield, onto a wafer and irradiating the surface of the wafer with collimated neutral atomic beams to form fine patterns thereon.
  • the method has disadvantages that patterned arrangement of the fine particles on the surface of the wafer are not readily attained, and that direct contact of the fine particles with the wafer may cause damage to the surface of the wafer.
  • the above method removes the region that is not covered with the shield, and provides positive pattern on the wafer.
  • the positive pattern has a limit to provide fine pattern.
  • the shield in order to form 70 nm fine pattern on the wafer, the shield should have below 70 nm size. However, it is not easy to manufacture the shield having below 70 nm size. Disclosure of Invention Technical Problem
  • An object of the present invention is to provide a method for forming a predetermined pattern on a wafer in a simple and efficient manner.
  • Another object of the present invention is to provide a method for forming a predetermined pattern on a wafer that avoids the disadvantages caused by direct contact of the shield with the wafer, mentioned in the above.
  • Another object of the present invention is to provide a method for forming a predetermined pattern on a wafer in which negative pattern is formed on the wafer to obtain a highly fine pattern.
  • a method for forming a pattern on a wafer by direct etching with neutral particle beam comprising: a) penetrating the neutral particle beam through a mask into which the pattern is formed; b) directly colliding the neutral particle beam passed through the mask with the wafer onto which no photo-resist is coated; and c) removing wafer- forming material of a region that comes in contact with the neutral particle beam to form negative pattern on the wafer.
  • a method for forming a pattern on a wafer by direct etching with neutral particle beam wherein the neutral particle beam of the step a) is obtained from the steps of: a-1) inside a plasma discharging space, producing plasma of a processing gas through a plasma discharge; a-2) colliding plasma ions of the plasma with a metal plate positioned at top of the plasma discharging space to produce neutral particles; and a-3) penetrating the neutral particles through a plasma limiter positioned below the plasma discharging space and configured to have holes or slits to pass the neutral particles through while interrupting the plasma ions and electrons from passing through.
  • a method for forming a pattern on a wafer by direct etching with neutral particle beam further comprising, while performing the plasma discharge of the step a- 1), applying a magnetic field to the plasma discharging space across the metal plate in order to increase density of the plasma ions near the metal plate.
  • a method for forming a pattern on a wafer by direct etching with neutral particle beam further comprising, while performing the plasma discharge of the step a-1), applying magnetic field to the plasma discharging space across the metal plate by a magnetron unit comprised of a central pole and a side pole having a race track arrangement into which the side pole surrounds the central pole.
  • a method for forming a pattern on a wafer by direct etching with neutral particle beam further comprising penetrating the neutral particles that had passed through the plasma limiter of the step a-3) through a collimator positioned below the plasma limiter in order to collimate the neutral particles.
  • a method for forming a pattern on a wafer by direct etching with neutral particle beam wherein the metal plate has concaved mirror shape and an aperture plate having an aperture is additionally installed at between the mask and the wafer to focus the neutral particle beam upon the aperture formed on the aperture plate.
  • the processing gas is a chlorinated gas or a fluorinated gas and the wafer is a silicon wafer.
  • the magnification of the mask is preferably adjusted in a range of 1 to 20.
  • the method of the present invention makes it possible to form a required pattern on the water by direct etching, even without coating of the photo-resist, exposure to light, developing with a developing solution or removal of the photo-resist, which are required in a conventional optical lithography.
  • the method of the present invention avoids the disadvantages caused by direct contact of the shield with the wafer, such as difficulty in patterned arrangement of shields that come in contact with the wafer and the damage to the wafer by the shields.
  • the method of the present invention does not depend upon the feature size of the mask. Specifically, the method makes it possible to easily form fine patterns smaller than 70 nm using the mask having feature size of 50 nm 200 nm that could be easily manufactured, by suitably adjusting the magnification ratio M.
  • Fig. 1 is a schematic diagram showing how an image is formed through a conventional optical lithography.
  • FIG. 2 is a schematic diagram illustrating a preferred embodiment of the method for forming predetermined patterns on a wafer by direct etching with neutral particle beams, in accordance with a preferred embodiment of the present invention.
  • FIG. 3 is a schematic diagram illustrating a preferred embodiment of the method for forming predetermined patterns on a wafer by direct etching with neutral particle beams in which the pattern is formed through proximity etching, in accordance with the present invention.
  • FIG. 4 is a schematic diagram illustrating another preferred embodiment of the method for forming predetermined patterns on a wafer by direct etching with neutral particle beams, in accordance with the present invention.
  • Fig. 5 is a schematic diagram illustrating a preferred embodiment of the arrangement of the magnetron unit used in the method of the present invention.
  • FIG. 6 is a schematic diagram illustrating further another preferred embodiment of the method for forming predetermined patterns on a wafer by direct etching with neutral particle beams in which the pattern is formed through projection etching, in accordance with the present invention.
  • the present invention relates to a method for forming a pattern on a wafer by direct etching with neutral particle beam.
  • the method comprises: a) penetrating the neutral particle beam through a mask into which the pattern is formed; b) directly colliding the neutral particle beam passed through the mask with the wafer onto which no photo-resist is coated; and c) removing wafer- forming material of a region that comes in contact with the neutral particle beam to for m negative pattern on the wafer.
  • direct etching means a process to etch the region that comes in contact with the neutral particle beam to form the pattern that is formed on the mask onto the wafer, by direct collision of the neutral particle beam with the surface of the wafer onto which no photo-resist is coated.
  • the direct etching forms the predetermined pattern formed on the mask onto the water by direct collision of the neutral particle beam with the surface of the wafer onto which no photo-resist is coated.
  • the mask is positioned above the wafer and is not in contact with the wafer.
  • a stencil mask having the magnification of 1 may be used.
  • the stencil mask is located at a proximity of the water.
  • the etching using the stencil mask may be called as proximity etching.
  • the magnification of the mask is suitable adjustable up to 20, and this etching may be called as projection etching.
  • Fig. 2 is a schematic diagram illustrating a preferred embodiment of the method for forming predetermined patterns on a wafer by direct etching with neutral particle beams, in accordance with a preferred embodiment of the present invention.
  • the method of the present invention uses the neutral particle beam 100 to form a pattern on the wafer 600.
  • the neutral particle beam 100 is not a charged one, contrary to the electron beam or ion beam. As thus, blurring caused by the change in the trajectory caused by space electric charge can be avoided, which is compared with the electron beam or the ion beam.
  • the method of the present invention uses the mask 500 to form a pattern on the wafer 600. Onto the mask 500, a predetermined pattern is formed. The mask is positioned above the wafer and is not in contact with the wafer 600. This is distinguishable from shields that come in contact with the wafer 600, disclosed in US 5,894,058.
  • the neutral particle beam 100 collides with the wafer 600 and etches the region of the wafer 600 that collides with the neutral particle beam 100.
  • the wafer 600 is not coated with any photo-resist.
  • the neutral particle beam 100 etches wafer- forming material. This simplifies the etching process, compared with the conventional consecutive processes comprised of photo-resist doping, exposure, developing, and photo-resist removal.
  • the method of the present invention forms the pattern by negative etching.
  • the pattern on the wafer 600 is a reflected image to the pattern formed on the mask 500. This is one of the distinguishing points from the positive etching formed by the shield, disclosed in US 5,894,058.
  • Fig. 3 is a schematic diagram illustrating a preferred embodiment of the method for forming predetermined patterns on a wafer by direct etching with neutral particle beams in which the pattern is formed through proximity etching, in accordance with the present invention.
  • the method of the present invention uses neutral particle beam 100 to form a pattern on the wafer 600.
  • the neutral particle beam 100 is preferably produced by collision of plasma ions 102b of a processing gas produced inside a plasma discharging space 101 from a plasma discharge, with a metal plate 200 positioned at top of the plasma discharging space 101.
  • the metal plate 200 converts the plasma ions 102b to neutral particles by collisions with the plasma ions 102b.
  • the metal plate 200 may be made of tantalum (Ta), molybdenum (Mo), tungsten (W), gold (Au), platinum (Pt), stainless steel or alloys thereof, but are not limited thereto. Contrary to that of WO 01/84611 and WO 2004/036611, the metal plate 200 does not require any holes for the pathway of neutral particles.
  • the plasma ions 102b produced inside the plasma discharging space 101 are directed to the metal plate 200 positioned at top of the plasma discharging space 101.
  • This can be easily carried out by applying a minus bias voltage to the metal plate 200.
  • the power of the bias voltage can be suitably adjustable depending upon the energy of the neutral particle beam to be required.
  • the minus bias voltage has the strength of 10 - 100 V, preferably 30 - 50 V.
  • the plasma ions 102b are directed to the metal plate 200 substantially or perfectively perpendicularly and collide with the metal plate 200.
  • the surface of the metal plate 200, where plasma ions 102b collide may be polished to improve conversion efficiency to neutral particles and to prevent energy loss during the collisions.
  • a magnetron unit 700 is installed at the rear of the metal plate 200.
  • Preferred embodiment of the arrangement of the magnetron unit 700 is shown in Fig. 5.
  • the magnetron unit 700 is comprised of a central pole 701 and a side pole 702 having a race track arrangement into which the side pole 702 surrounds the central pole 701.
  • the upper of the central pole 701 has N pole (or S pole) and the bottom of the central pole 701 has S pole (or N pole), and the side pole 702 has complementary arrangement to the central pole 701.
  • the central pole 701 may be a permanent magnet and the side pole 702 may be a magnetic absorbent body.
  • the magnetic field applied across the metal plate 200 by the magnetron unit 700 having race track arrangement controls the movement of the electrons 102a. In other words, it forces the electrons 102a to circulate around mirror race track inside the plasma discharging space 101.
  • the electrons 102a rotating around mirror race track collides with neutral particles of the processing gas 102c that are not converted into plasma to produce plasma ions 102b.
  • the plasma ions 102b thus produced are directed to the metal plate 200 with aid of the minus bias voltage.
  • the magnetic field applied across the metal plate 200 captures the electrons 102a around the race track and increases the density of the plasma ions 102b near the metal plate 200.
  • the strength of the magnetic field by the magnetron unit 700 can be suitably adjustable depending upon the kind and the amount of the processing gas. Typically, the magnetic field having the strength of 1000 - 5000 gauss is applied. At below 1000 gauss, the strength is not enough to capture the electrons. At above 5000 gauss, it is not cost effective.
  • the magnetron unit 700 is generally made of the permanent magnet. In order to reinforce the magnetic field inside the plasma discharging space 101, the magnetron unit 700 is preferably covered with a cover 703. Preferably, the cover 703 has high magnetic susceptibility to focus the magnetic field into the plasma discharging space 101 and to reduce the loss thereof. Generally, soft iron is widely used as magnetic shielding agent.
  • the plasma ions 102b undergo neutraliza tion such as auger neutralization.
  • the neutral particles thus produced are reflected to the plasma discharging place 101 and enter, via the plasma discharging place 101, into a plasma limiter 300 positioned below the plasma discharging place 101.
  • the plasma limiter 300 is configured to have holes or slits 301, preferably slits. These holes or slits 301 allow the neutral particles to penetrate while interrupting the passage of the plasma ions 102b and the electrons 102a so that the neutral particles could pass through the plasma limiter 300 selectively.
  • a means 302 for applying magnetic field or electric field to the plasma limiter 300 could be additionally installed at the plasma limiter 300.
  • the means for applying magnetic or electric field 302 changes the moving direction of the plasma ions 102b and the electrons 102a, and further prevents them from reaching to the surface of the wafer 600.
  • the plasma limiter 300 could avoid the adverse effects caused by the plasma ions 102b and the electrons 102a. More preferably, as shown in an inset of the Fig.
  • the plasma limiter 300 comprises a magnet 302a at a center to apply the magnetic field into the holes or slits 301, conductive metal membranes 302b positioned at both surfaces of the magnet 302a to apply the electric field into the holes or slits 301, and dielectric membranes 303 positioned at both surfaces of the conductive metal membranes 302b to insulate the conductive metal membranes 302b.
  • a magnetic shielding film 304 may be formed at bottom of the magnet 302a.
  • a magnetic shielding agent any one well known in the art may be used. Preferable is soft iron.
  • the conductive metal membranes 302b is connected to a power supply (not shown).
  • Fig. 4 is a schematic diagram illustrating another preferred embodiment of the method for forming predetermined patterns on a wafer by direct etching with neutral particle beams in accordance with the present invention.
  • a collimator 400 is additionally installed.
  • the collimator 400 is configured to have multi holes 401.
  • the collimator 400 is made of dielectric material such as ceramics. Ceramic material absorbs the energy of the neutral particles through collision.
  • a ratio of the length (L) to the diameter (R) of the hole 401 (L/R) is suitably adjustable regarding the operation condition (for exmaple, the pressure of the processing gas, the operation temperature, etc) and the etching profile to be formed.
  • the length of the hole 401 is determined from a mean free path (a mean distance that the neutral particle can move without collision), and the diameter (R) is determined from the length of the hole divided by a ratio of the depth of the etching profile to the width of the etching profile. If the ratio of the depth of the etching profile to the width of the etching profile to be required is set to 10: 1, the ratio of the length (L) to the diameter (R) of the hole 401 (L/R) is preferably 10:1.
  • the length (L) of the holes 401 is set to the mean free path (calculated as 2 cm) and the diameter of the hole 401 is set to 2 mm.
  • a fluorinated gas such as SF or CF may
  • the neutral particles 6 4 be used as a processing gas.
  • the processing gas is converted to plasma through a plasma discharge.
  • the plasma ions of the plasma are converted to the hyper- thermal neutral particles by collisions with the metal plate 200.
  • the neutral particles preferably have 1 - 100 eV, more preferably 10 - 30 eV.
  • the neutral particles having below 1 eV do not exhibit sufficient etching capacity, and the neutral particles having above 100 eV may cause physical damage to the wafer 600.
  • the unexplained reference number 601 is a target holder moving up and down by operation of an elevating device connected to a elevating axis (not shown) so that it can carry in the wafer 600 such as a wafer to be newly processed and carry out the processed the wafer 600.
  • Fig. 6 is a schematic diagram illustrating further another preferred embodiment of the method for forming predetermined patterns on a wafer by direct etching with neutral particle beams in which the pattern is formed through projection etching, in accordance with the present invention.
  • the projection etching requires focusing of the neutral particle beam 100.
  • the metal plate 200 has a concaved mirror shape.
  • an aperture plate 800 having an aperture 801 at a center is additionally installed at between the mask 500 and the wafer 600.
  • the focal point of concaved the metal plate 200 is adjusted to the aperture 801.
  • the feature size formed on the wafer 600 can be easily controlled simply by adequately adjusting the feature size of the mask 500 and the ratio ofthe distance (L') between the mask 500 and the aperture plate 800 to the distance (L) between the wafer 600 and the aperture 800.
  • the method further makes it possible to form a fine pattern with feature sizes less than 70 nm on the wafer without reducing the feature size of the mask 500, as well as to eliminate the undesired effects of non-linear neutral particles.
  • the magnification ratio M is adjusted to less than 20, because exceeding the ratio could lead to undesired effects caused by particles that exist in the space between the mask 500 and the aperture plate 800.

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Theoretical Computer Science (AREA)
  • Analytical Chemistry (AREA)
  • Mathematical Physics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Drying Of Semiconductors (AREA)

Abstract

La présente invention concerne un procédé permettant de former un motif sur une plaquette par gravure directe avec un faisceau de particules neutres. Ce procédé consiste : (a) à provoquer une collision directe du faisceau de particules neutres passant à travers le masque avec la plaquette sur laquelle aucune photo résine n'est déposée et, (c) à retirer le matériau de formation de plaquette d'une région qui entre en contact avec le faisceau de particules neutres de façon à former un motif négatif sur cette plaquette. Ce procédé permet de former le motif sur la plaquette par gravure directe, même sans dépôt de photorésine, sans exposition, sans développement ni suppression de cette photorésine. Ce procédé permet d'éviter les inconvénients causés par le contact direct d'écrans avec la plaquette, tels que des difficultés posées dans l'agencement organisé des écrans sur la plaquette et les dégradations causées à cette plaquette par les écrans.
PCT/KR2007/003068 2006-06-29 2007-06-25 Procédé de formation de motifs prédéterminés sur une plaquette par gravure directe avec des faisceaux de particules neutres Ceased WO2008002045A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR10-2006-0059194 2006-06-29
KR1020060059194A KR100754369B1 (ko) 2006-06-29 2006-06-29 중성입자빔을 이용한 직접 에칭에 의해 기판 상에 소정의패턴을 형성하는 방법

Publications (1)

Publication Number Publication Date
WO2008002045A1 true WO2008002045A1 (fr) 2008-01-03

Family

ID=38736179

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/KR2007/003068 Ceased WO2008002045A1 (fr) 2006-06-29 2007-06-25 Procédé de formation de motifs prédéterminés sur une plaquette par gravure directe avec des faisceaux de particules neutres

Country Status (2)

Country Link
KR (1) KR100754369B1 (fr)
WO (1) WO2008002045A1 (fr)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103646870A (zh) * 2013-11-15 2014-03-19 中国科学院物理研究所 薄膜窗口的制备方法
WO2016132583A1 (fr) * 2015-02-18 2016-08-25 コニカミノルタ株式会社 Procédé de fabrication d'un dispositif électronique à couche mince, appareil de gravure, et appareil pour la fabrication d'un dispositif électronique à couche mince

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2022252707A1 (fr) * 2022-02-24 2022-12-08 袁元 Procédé et appareil de traitement et de commande d'un dispositif à semi-conducteurs et dispositif de photolithographie à faisceau de particules à haute énergie

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2001084611A1 (fr) * 2000-05-02 2001-11-08 Sem Technology Co., Ltd. Appareil de traitement de surfaces a l'aide de faisceaux de particules neutres
JP2001319923A (ja) * 2000-05-10 2001-11-16 Ebara Corp 基材の異方性食刻方法及び基材の食刻装置
KR20020039840A (ko) * 2000-11-22 2002-05-30 염근영 중성빔을 이용한 반도체소자의 식각방법 및 이를 위한식각장치

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100729352B1 (ko) * 2005-01-10 2007-06-15 삼성전자주식회사 회전형 리플렉터를 갖는 반사형 중성빔 식각 장치
KR100714898B1 (ko) * 2005-01-21 2007-05-04 삼성전자주식회사 중성빔을 이용한 기판 처리장치 및 처리방법

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2001084611A1 (fr) * 2000-05-02 2001-11-08 Sem Technology Co., Ltd. Appareil de traitement de surfaces a l'aide de faisceaux de particules neutres
JP2001319923A (ja) * 2000-05-10 2001-11-16 Ebara Corp 基材の異方性食刻方法及び基材の食刻装置
KR20020039840A (ko) * 2000-11-22 2002-05-30 염근영 중성빔을 이용한 반도체소자의 식각방법 및 이를 위한식각장치

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103646870A (zh) * 2013-11-15 2014-03-19 中国科学院物理研究所 薄膜窗口的制备方法
CN103646870B (zh) * 2013-11-15 2016-11-02 中国科学院物理研究所 薄膜窗口的制备方法
WO2016132583A1 (fr) * 2015-02-18 2016-08-25 コニカミノルタ株式会社 Procédé de fabrication d'un dispositif électronique à couche mince, appareil de gravure, et appareil pour la fabrication d'un dispositif électronique à couche mince

Also Published As

Publication number Publication date
KR100754369B1 (ko) 2007-09-03

Similar Documents

Publication Publication Date Title
JP2951947B2 (ja) 低エネルギー電子ビームのリソグラフィ
JP5241195B2 (ja) 荷電粒子露光装置
KR100597037B1 (ko) 대전입자 리소그래피 장치용 투광시스템
KR101015116B1 (ko) 하전(荷電) 입자 빔 시스템
JP4560712B2 (ja) 超高および超低運動イオン・エネルギーによるターゲットのイオン照射
US20020036273A1 (en) Methods for manufacturing reticles for charged-particle-beam microlithography exhibiting reduced proximity effects, and reticles produced using same
US20030043358A1 (en) Methods for determining focus and astigmatism in charged-particle-beam microlithography
US6972417B2 (en) Apparatus and methods for patterning a reticle blank by electron-beam inscription with reduced exposure of the reticle blank by backscattered electrons
US5866913A (en) Proximity correction dose modulation for E-beam projection lithography
WO2008002045A1 (fr) Procédé de formation de motifs prédéterminés sur une plaquette par gravure directe avec des faisceaux de particules neutres
CA2107795C (fr) Procedes lithographiques aux electrons
JPH08222175A (ja) 荷電粒子を用いた微細加工方法及び装置
US6680481B2 (en) Mark-detection methods and charged-particle-beam microlithography methods and apparatus comprising same
US8178280B2 (en) Self-contained proximity effect correction inspiration for advanced lithography (special)
JP2002139758A (ja) 光短波長化装置
US5851725A (en) Exposure of lithographic resists by metastable rare gas atoms
US6004726A (en) Method of forming a lithographic pattern utilizing charged beam particles between 0.1 and 5.0 ev
JP4356064B2 (ja) 荷電粒子線露光装置および該装置を用いたデバイス製造方法
Davies Use of energy beams for ultra-high precision processing of materials
CN112951692B (zh) 处理微结构部件的装置和方法
Lepselter et al. Resolution Limitations for Submicron Lithography
KR100792385B1 (ko) 나노팁전자방출원, 그의 제조 방법 및 그를 구비한 나노팁리소그래피 장치
KR100491832B1 (ko) 중성입자빔 리소그라피
TW202445274A (zh) 微影裝置及器件製造方法
JP2007019195A (ja) 電子ビーム装置及び電子ビーム露光装置

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 07768497

Country of ref document: EP

Kind code of ref document: A1

NENP Non-entry into the national phase

Ref country code: DE

NENP Non-entry into the national phase

Ref country code: RU

122 Ep: pct application non-entry in european phase

Ref document number: 07768497

Country of ref document: EP

Kind code of ref document: A1