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WO2008096752A1 - Etching method and recording medium - Google Patents

Etching method and recording medium Download PDF

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Publication number
WO2008096752A1
WO2008096752A1 PCT/JP2008/051862 JP2008051862W WO2008096752A1 WO 2008096752 A1 WO2008096752 A1 WO 2008096752A1 JP 2008051862 W JP2008051862 W JP 2008051862W WO 2008096752 A1 WO2008096752 A1 WO 2008096752A1
Authority
WO
WIPO (PCT)
Prior art keywords
etching method
recording medium
plasma
fluorine
etching
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2008/051862
Other languages
French (fr)
Japanese (ja)
Inventor
Toshihisa Nozawa
Kotaro Miyatani
Toshiyasu Hori
Shigekazu Hirose
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokyo Electron Ltd
Original Assignee
Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP2007123820A external-priority patent/JP4919871B2/en
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Priority to CN2008800044252A priority Critical patent/CN101606234B/en
Priority to KR1020097014154A priority patent/KR101179111B1/en
Priority to US12/526,471 priority patent/US8383519B2/en
Publication of WO2008096752A1 publication Critical patent/WO2008096752A1/en
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • H10P50/242—
    • H10W20/085—
    • H10P50/287—
    • H10P52/00—
    • H10W20/01—
    • H10W20/081—
    • H10W20/096—
    • H10W20/071—

Landscapes

  • Drying Of Semiconductors (AREA)
  • Manufacturing Optical Record Carriers (AREA)
  • ing And Chemical Polishing (AREA)

Abstract

Provided is an etching method wherein a fluorine-added carbon film formed on a substrate is etched by plasma. The method includes a first step of performing etching with plasma of an oxygen-containing treatment gas, and a second step of performing etching with plasma of a fluorine-containing treatment gas.
PCT/JP2008/051862 2007-02-09 2008-02-05 Etching method and recording medium Ceased WO2008096752A1 (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
CN2008800044252A CN101606234B (en) 2007-02-09 2008-02-05 Etching method and recording medium
KR1020097014154A KR101179111B1 (en) 2007-02-09 2008-02-05 Etching method and recording medium
US12/526,471 US8383519B2 (en) 2007-02-09 2008-02-05 Etching method and recording medium

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2007031162 2007-02-09
JP2007-031162 2007-02-09
JP2007123820A JP4919871B2 (en) 2007-02-09 2007-05-08 Etching method, semiconductor device manufacturing method, and storage medium
JP2007-123820 2007-05-08

Publications (1)

Publication Number Publication Date
WO2008096752A1 true WO2008096752A1 (en) 2008-08-14

Family

ID=39681661

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/051862 Ceased WO2008096752A1 (en) 2007-02-09 2008-02-05 Etching method and recording medium

Country Status (2)

Country Link
KR (1) KR101179111B1 (en)
WO (1) WO2008096752A1 (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011023449A (en) * 2009-07-14 2011-02-03 Renesas Electronics Corp Semiconductor device
WO2015069613A1 (en) * 2013-11-06 2015-05-14 Mattson Technology, Inc. Novel mask removal process strategy for vertical nand device
CN114645281A (en) * 2022-04-06 2022-06-21 岭南师范学院 Method for removing carbon film on surface of metal workpiece

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6817692B2 (en) * 2015-08-27 2021-01-20 東京エレクトロン株式会社 Plasma processing method
KR102726476B1 (en) * 2019-01-22 2024-11-07 삼성전자주식회사 Method of forming mask pattern and method of manufacturing semiconductor device using the same

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0467655A (en) * 1990-07-09 1992-03-03 Nippon Telegr & Teleph Corp <Ntt> Semiconductor device and manufacture thereof
JP2004530287A (en) * 2000-12-26 2004-09-30 ハネウェル・インターナショナル・インコーポレーテッド Method for eliminating the reaction between photoresist and OSG
JP2005123406A (en) * 2003-10-16 2005-05-12 Tokyo Electron Ltd Plasma etching method.
JP2005223360A (en) * 1999-03-09 2005-08-18 Tokyo Electron Ltd Manufacturing method of semiconductor device
JP2006302924A (en) * 2005-04-15 2006-11-02 Hitachi High-Technologies Corp Plasma processing method and plasma processing apparatus

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3683570B2 (en) * 2003-02-19 2005-08-17 松下電器産業株式会社 Manufacturing method of semiconductor device
JP4715207B2 (en) * 2004-01-13 2011-07-06 東京エレクトロン株式会社 Semiconductor device manufacturing method and film forming system

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0467655A (en) * 1990-07-09 1992-03-03 Nippon Telegr & Teleph Corp <Ntt> Semiconductor device and manufacture thereof
JP2005223360A (en) * 1999-03-09 2005-08-18 Tokyo Electron Ltd Manufacturing method of semiconductor device
JP2004530287A (en) * 2000-12-26 2004-09-30 ハネウェル・インターナショナル・インコーポレーテッド Method for eliminating the reaction between photoresist and OSG
JP2005123406A (en) * 2003-10-16 2005-05-12 Tokyo Electron Ltd Plasma etching method.
JP2006302924A (en) * 2005-04-15 2006-11-02 Hitachi High-Technologies Corp Plasma processing method and plasma processing apparatus

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011023449A (en) * 2009-07-14 2011-02-03 Renesas Electronics Corp Semiconductor device
WO2015069613A1 (en) * 2013-11-06 2015-05-14 Mattson Technology, Inc. Novel mask removal process strategy for vertical nand device
JP2016517179A (en) * 2013-11-06 2016-06-09 マットソン テクノロジー インコーポレイテッドＭａｔｔｓｏｎ Ｔｅｃｈｎｏｌｏｇｙ， Ｉｎｃ． Novel mask removal method for vertical NAND devices
CN114645281A (en) * 2022-04-06 2022-06-21 岭南师范学院 Method for removing carbon film on surface of metal workpiece
CN114645281B (en) * 2022-04-06 2023-11-24 岭南师范学院 Method for removing carbon film on surface of metal workpiece

Also Published As

Publication number Publication date
KR20090094363A (en) 2009-09-04
KR101179111B1 (en) 2012-09-07

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