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WO2008089657A1 - Cellule solaire et procédé de réduction de la résistance série de cellules solaires - Google Patents

Cellule solaire et procédé de réduction de la résistance série de cellules solaires Download PDF

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Publication number
WO2008089657A1
WO2008089657A1 PCT/CN2008/000127 CN2008000127W WO2008089657A1 WO 2008089657 A1 WO2008089657 A1 WO 2008089657A1 CN 2008000127 W CN2008000127 W CN 2008000127W WO 2008089657 A1 WO2008089657 A1 WO 2008089657A1
Authority
WO
WIPO (PCT)
Prior art keywords
solar cell
electrode conductor
concentrating solar
solderable
light incident
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/CN2008/000127
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English (en)
Chinese (zh)
Inventor
Binxuan Yi
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Individual
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Individual
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Filing date
Publication date
Application filed by Individual filed Critical Individual
Publication of WO2008089657A1 publication Critical patent/WO2008089657A1/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H10F77/206—Electrodes for devices having potential barriers
    • H10F77/211—Electrodes for devices having potential barriers for photovoltaic cells
    • H10F77/215—Geometries of grid contacts
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F19/00—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules
    • H10F19/90—Structures for connecting between photovoltaic cells, e.g. interconnections or insulating spacers
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

Definitions

  • the invention belongs to the field of solar photovoltaic power generation, and particularly relates to a concentrating solar battery.
  • the invention also relates to a method of reducing the resistance of a series of concentrating solar cells.
  • the invention also relates to a concentrating solar cell module. Background technique
  • the main factors affecting the power output of concentrating solar cells are series resistance, that is, the body resistance of the semiconductor, the surface sheet resistance, and the resistance of the electrode conductor and the contact resistance between the electrode and the silicon surface.
  • the bulk resistance of a semiconductor is determined by the material selection of the semiconductor and cannot be improved by the improvement of the processing technology.
  • the surface sheet resistance is not as low as possible, and the lower the surface sheet resistance, the electron-hole recombination speed will also be exponential ratio.
  • Electrode conductor resistance and "contact resistance between the electrode and the silicon surface” are improved, for example: 1. Use a better electrode conductive material; 2. Widen the electrode conductor Width; 3, using grooved buried gate technology; can effectively reduce the resistance of the electrode conductor resistance, thereby reducing the series resistance; however, 1, the use of better conductive materials, will make the manufacturing cost rise rapidly, and The reduced resistance is limited; 2. For the current common solar cells, the basic requirement is that the electrode conductor elements should be as narrow as possible in order to maximize the light-receiving area of the light incident surface, and the ratio of the light incident surface masked by the electrode conductor elements.
  • An object of the present invention is to provide a concentrating solar cell which can increase the cross-sectional area of an electrode conductor and reduce the length of the electrode conductor by providing two solderable electrode conductor members having a wide width and a very short length, thereby effectively reducing the length of the electrode conductor.
  • the series resistance of the concentrating solar cell is to provide a concentrating solar cell which can increase the cross-sectional area of an electrode conductor and reduce the length of the electrode conductor by providing two solderable electrode conductor members having a wide width and a very short length, thereby effectively reducing the length of the electrode conductor.
  • Another object of the present invention is to provide a concentrating solar cell module in which a plurality of concentrating solar cells are connected in series to each other, and have a maximum light incident surface, which improves utilization of solar energy resources and power generation efficiency.
  • a concentrating solar cell includes a doped semiconductor material body having a p/n junction, wherein the concentrating solar energy battery comprises a first main opposite surface forming a light incident surface defined in a top region of the diffusion region of the semiconductor material; and a second main opposite surface forming a back surface of the light incident surface;
  • first solderable electrode conductor member disposed on a longer side of the first major opposing surface, the second major opposing surface
  • the second solderable electrode conductor member is disposed in parallel with the opposite sides.
  • the concentrating solar cell of the present invention wherein the widths of the first solderable electrode conductor component and the second solderable electrode conductor component are equal to the longer sides of the first main opposite surface and the second main opposite surface, respectively,
  • the length of the light-incident surface of the concentrating solar cell is from 1.0 mm to 4.0 mm, and the length of the shorter side of the first main opposite surface and the second main opposite surface is from 1.5 mm to 5.5 mm. Mm.
  • the first solderable electrode conductor member and the second solderable electrode conductor member have a length of 1.0 mm, and the light incident surface of the concentrating solar cell has a width of 2.0 mm.
  • the concentrating solar cell of the present invention wherein the material of the doped semiconductor material body may be selected from the group consisting of silicon, gallium arsenide, indium phosphide, copper indium selenide, antimony, and zinc oxide.
  • the material of the solderable electrode conductor member may be selected from one or more mixed materials of metal materials such as aluminum, silver, titanium and nickel.
  • the material of the first solderable electrode conductor member is silver
  • the material of the second solderable electrode conductor member is a mixture of silver and aluminum.
  • the concentrating solar cell of the present invention wherein the doped semiconductor material body is a doped semiconductor wafer.
  • a concentrating solar cell module which is composed of a concentrating solar cell of the present invention in series, through a first solderable electrode conductor element of a concentrating solar cell and another adjacent concentrating solar energy
  • the second solderable electrode conductor elements of the battery are in direct contact with each other in series.
  • a method of reducing series resistance of a concentrating solar cell having a body of doped semiconductor material includes the steps of:
  • solderable electrode conductor member on the back surface of the light incident surface of the doped semiconductor material body, the position of which is staggered from the first main opposite surface electrode conductor member, and the staggered positions of all the solderable electrode conductor members are identical;
  • a more preferable solution is to first apply an oxidizing agent on the surface of the pure crystalline silicon and perform a step of engraving to form an oxide layer on the surface of the groove to be carved. After cleaning the surface, perform steps 1) to 6) on the silicon.
  • FIG. 1 is a front view of light incident of a concentrating solar cell of the present invention
  • FIG. 2 is a rear view of a concentrating solar cell
  • Figure 3 is a perspective view of a concentrating solar cell of the present invention.
  • Figure 4 is a partial perspective view of the concentrating solar cell of Figure 3;
  • Figure 5 is a side view showing the state in which two concentrating solar cells are coupled together before dicing
  • Figure 6 is a side view showing the state in which two concentrating solar cells are connected in series after dicing
  • Figure 7 is a plan view of a concentrating solar cell device formed by connecting ten concentrating solar cells in series;
  • Figure 8 is a cross-sectional view of a concentrating solar cell according to another embodiment of the present invention before dicing;
  • Figure 9 is a cross-sectional view of a cell after dicing of the concentrating solar cell of Figure 8.
  • FIG. 1 shows a group of batteries constituting the concentrating solar cells 11, 12, 13, 14.
  • the body of the solar cell is a doped semiconductor material body having a p/n junction, and includes a first main opposite surface 111, 121, 131. 141..., forming a light incident surface established in a top region of the diffusion region of the semiconductor material, and a second main opposite surface 112, 122, 132, 142... located on the back surface of the light incident surface (see FIG. 2), and a plurality of sides, and referring to FIG. 3, is an enlarged perspective view of a concentrating solar cell 11, and FIG.
  • the fourth solderable electrode conductor elements 113, 123, 133, 143 are disposed on one side of the long side, and the second solderable electrode conductor elements 114, 124, 134, 1447-8 are disposed in parallel on opposite sides of the second main opposite surface.
  • the first solderable electrode conductor member 113 of one concentrating solar cell and the second solderable electrode conductor member 124 of another adjacent concentrating solar cell Tightly welded together since the width W1 of the solderable electrode conductive member is equal to the length of the longer side of the first main opposite surface, and the length L1 is very narrow, 0.5 mm to 1.5 mm, so that the solderable electrode conductor resistance can be Neglected, in addition, the width of the light incident surface of the concentrating solar cell W2 is 1.0mm ⁇ 4.0mm, the first major surface and the opposite second shorter side length L2 of the main opposing faces 1.5mm ⁇ 5.5mm.
  • FIG. 7 is a light incident surface of the concentrating solar cell only from the surface. Exposure to sunlight, without any electrode conductor components covering, solar energy resources are 100% utilized, improving the power generation efficiency of concentrating solar cells.
  • the concentrating solar cell is made of doped single crystal silicon, which is made of an active semiconductor device, and has a 125 nmim x 125 mm square, 220 ⁇ m thick conventional silicon wafer, which is commercially available.
  • the light incident surface of the silicon wafer is then doped at a temperature of 800 to 900 ° C by doping with a phosphorus compound such as POCl 3 to form an n-type and formed as
  • the basic p/n junction 117 of the active component of the concentrating solar cell has a surface resistance of about 30 ⁇ / ⁇ .
  • the solderable silver paste is applied to the light incident surface of the doped semiconductor material body through a mask to form a plurality of strips having a width of 1 mm, a gap of any two solderable electrode conductor elements of 2 mm, and a length of 125 mm.
  • the electrode conductor members 113, 123, 133 and there is no conductor connection between the adjacent two solderable electrode conductor members.
  • solderable silver-aluminum paste is applied to the back surface of the doped semiconductor material body through a mask to form a plurality of solderable electrode conductor members 114 having a width of 1 mm, a spacing of 2 mm therebetween, and a length of 125 mm. 124, 134, ..., the back surface solderable electrode conductor of the doped semiconductor material body
  • the position of the piece is just offset from the solderable electrode conductor element of the light incident surface, and the staggered positions of all the solderable electrode conductor elements are identical.
  • a layer of aluminum 115 is evaporated to generate a back electric field.
  • the commonly used high-temperature sintering process and the like are applied to the above materials, so that the silver paste is firmly and reliably connected to the silicon surface, and a back electric field is formed on the back surface.
  • An anti-reflection film 116 is deposited on the light incident surface of the concentrating solar cell by a conventional process. Using a laser dicing machine, the staggered portion of the solderable electrode conductor member and the back solderable electrode conductor member along the light incident surface is cut away, as shown in Fig. 5, forming a separate concentrating light having a low series resistance of 125 mm in length and 3 mm in width. Solar cells 11, 12, 13, 14...
  • the semiconductor material body used in the concentrating solar cell includes not only doped silicon but also any other semiconductor material.
  • Examples of other semiconductor materials are gallium arsenide, indium phosphide, copper indium selenide, antimony and zinc oxide.
  • the solderable electrode conductor element is a medium for free electron flow, and in the series connection mode of the concentrating solar cell, the upper surface of one concentrating solar cell is soldered to the lower surface of another concentrating solar cell, and the high conductivity of the component must be ensured.
  • the metal materials used are mainly aluminum, silver, titanium, nickel, etc., or a combination of these metals.
  • FIGS. 8 and 9 Another embodiment of the present invention is shown in FIGS. 8 and 9.
  • the concentrating solar cell produced by the process forms a protective layer, that is, the oxide layer 118, on the side having the p/n junction, which effectively prevents leakage due to the bypass resistance.
  • solderable electrode conductor element having a width equal to the length of the concentrating solar cell, and the length of the solderable electrode conductor element
  • the shorter the length of the conductor the smaller the resistance. Therefore, the FET temperature of the concentrating solar cell of the present invention is much smaller than that of ordinary solar energy.
  • the resistance value of the electrode conductor element of the battery, the resistance of the electrode conductor element is almost negligible, and the overall series resistance value of the concentrating solar cell is effectively reduced.
  • the solderable electrode conductor member of the light incident surface of the concentrating solar cell is welded to the back surface solderable electrode conductor component of the other concentrating solar cell, it is connected in series, that is, another concentrating solar cell covers the upper portion.
  • the electrode conductor element of a concentrating solar cell, on the surface, the sunlight is incident on the light incident surface of the concentrating solar cell, without any object blocking, all absorbed by the concentrating solar cell, making full use of the solar energy resources , improve the power generation efficiency of concentrating solar cells.

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  • Photovoltaic Devices (AREA)

Abstract

La présente invention concerne une cellule solaire. La zone de coupe des conducteurs d'électrode (113, 114) peut être élargie et la longueur des conducteurs d'électrode (113, 114) peut être réduite en configurant deux conducteurs d'électrode soudables (113, 114) dont la largeur est plus large et la longueur plus courte ; cela peut donc réduire la résistance série de la cellule solaire. Un module de cellule solaire est également fourni ; il est formé de plusieurs cellules solaires connectées en série. En outre, l'invention propose un procédé qui peut réduire la résistance série du module de cellule solaire.
PCT/CN2008/000127 2007-01-17 2008-01-17 Cellule solaire et procédé de réduction de la résistance série de cellules solaires Ceased WO2008089657A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
CNA2007100077003A CN101226968A (zh) 2007-01-17 2007-01-17 降低聚光太阳能电池串联电阻阻值的方法及由该方法获得的聚光太阳能电池
CN200710007700.3 2007-01-17

Publications (1)

Publication Number Publication Date
WO2008089657A1 true WO2008089657A1 (fr) 2008-07-31

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CN (1) CN101226968A (fr)
WO (1) WO2008089657A1 (fr)

Cited By (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2013020590A1 (fr) * 2011-08-09 2013-02-14 Kioto Photovoltaics Gmbh Cellule solaire rectangulaire et agencement correspondant de cellules solaires
US9281436B2 (en) 2012-12-28 2016-03-08 Solarcity Corporation Radio-frequency sputtering system with rotary target for fabricating solar cells
US9412884B2 (en) 2013-01-11 2016-08-09 Solarcity Corporation Module fabrication of solar cells with low resistivity electrodes
US9461189B2 (en) 2012-10-04 2016-10-04 Solarcity Corporation Photovoltaic devices with electroplated metal grids
US9496427B2 (en) 2013-01-11 2016-11-15 Solarcity Corporation Module fabrication of solar cells with low resistivity electrodes
US9496429B1 (en) 2015-12-30 2016-11-15 Solarcity Corporation System and method for tin plating metal electrodes
US9590132B2 (en) 2014-12-05 2017-03-07 Solarcity Corporation Systems and methods for cascading photovoltaic structures
US9624595B2 (en) 2013-05-24 2017-04-18 Solarcity Corporation Electroplating apparatus with improved throughput
US9685579B2 (en) 2014-12-05 2017-06-20 Solarcity Corporation Photovoltaic structure cleaving system
US9761744B2 (en) 2015-10-22 2017-09-12 Tesla, Inc. System and method for manufacturing photovoltaic structures with a metal seed layer
US9773928B2 (en) 2010-09-10 2017-09-26 Tesla, Inc. Solar cell with electroplated metal grid
US9793421B2 (en) 2014-12-05 2017-10-17 Solarcity Corporation Systems, methods and apparatus for precision automation of manufacturing solar panels
US9800053B2 (en) 2010-10-08 2017-10-24 Tesla, Inc. Solar panels with integrated cell-level MPPT devices
US9842956B2 (en) 2015-12-21 2017-12-12 Tesla, Inc. System and method for mass-production of high-efficiency photovoltaic structures
US9865754B2 (en) 2012-10-10 2018-01-09 Tesla, Inc. Hole collectors for silicon photovoltaic cells
US9887306B2 (en) 2011-06-02 2018-02-06 Tesla, Inc. Tunneling-junction solar cell with copper grid for concentrated photovoltaic application
US9991412B2 (en) 2014-12-05 2018-06-05 Solarcity Corporation Systems for precision application of conductive adhesive paste on photovoltaic structures
US10043937B2 (en) 2014-12-05 2018-08-07 Solarcity Corporation Systems and method for precision automated placement of backsheet on PV modules
US10074755B2 (en) 2013-01-11 2018-09-11 Tesla, Inc. High efficiency solar panel
US10084099B2 (en) 2009-11-12 2018-09-25 Tesla, Inc. Aluminum grid as backside conductor on epitaxial silicon thin film solar cells
US10084107B2 (en) 2010-06-09 2018-09-25 Tesla, Inc. Transparent conducting oxide for photovoltaic devices
US10115838B2 (en) 2016-04-19 2018-10-30 Tesla, Inc. Photovoltaic structures with interlocking busbars
US10236406B2 (en) 2014-12-05 2019-03-19 Solarcity Corporation Systems and methods for targeted annealing of photovoltaic structures
US10309012B2 (en) 2014-07-03 2019-06-04 Tesla, Inc. Wafer carrier for reducing contamination from carbon particles and outgassing
EP3506134A3 (fr) * 2014-05-27 2019-07-31 SunPower Corporation Module de cellule solaire à bardeau
US10672919B2 (en) 2017-09-19 2020-06-02 Tesla, Inc. Moisture-resistant solar cells for solar roof tiles
US11190128B2 (en) 2018-02-27 2021-11-30 Tesla, Inc. Parallel-connected solar roof tile modules

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CN101964379B (zh) * 2010-08-16 2013-08-07 福建铂阳精工设备有限公司 薄膜太阳能电池模板电流密度补偿方法
DE202011108836U1 (de) * 2011-12-08 2011-12-29 Grenzebach Maschinenbau Gmbh Vorrichtung zur industriellen Herstellung von photovoltaischen Konzentratormodulen
DE202011109424U1 (de) * 2011-12-23 2012-01-20 Grenzebach Maschinenbau Gmbh Vorrichtung zur industriellen Verdrahtung und Endprüfung von photovoltaischen Konzentratormodulen
CN104659122B (zh) * 2015-02-07 2017-06-16 秦皇岛博硕光电设备股份有限公司 一种晶硅电池片及晶硅电池组件及晶硅电池片的连接方法
CN205810826U (zh) * 2015-05-22 2016-12-14 苏州沃特维自动化系统有限公司 一种太阳能电池组件
CN104882504A (zh) * 2015-06-17 2015-09-02 浙江晶科能源有限公司 一种太阳能组件结构
WO2017147332A1 (fr) * 2016-02-24 2017-08-31 Sunpower Corporation Panneau solaire
CN107134500A (zh) * 2017-05-05 2017-09-05 常州天合光能有限公司 小规格太阳能电池、太阳能电池及其制备方法

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Cited By (35)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10084099B2 (en) 2009-11-12 2018-09-25 Tesla, Inc. Aluminum grid as backside conductor on epitaxial silicon thin film solar cells
US10084107B2 (en) 2010-06-09 2018-09-25 Tesla, Inc. Transparent conducting oxide for photovoltaic devices
US9773928B2 (en) 2010-09-10 2017-09-26 Tesla, Inc. Solar cell with electroplated metal grid
US9800053B2 (en) 2010-10-08 2017-10-24 Tesla, Inc. Solar panels with integrated cell-level MPPT devices
US9887306B2 (en) 2011-06-02 2018-02-06 Tesla, Inc. Tunneling-junction solar cell with copper grid for concentrated photovoltaic application
WO2013020590A1 (fr) * 2011-08-09 2013-02-14 Kioto Photovoltaics Gmbh Cellule solaire rectangulaire et agencement correspondant de cellules solaires
US9461189B2 (en) 2012-10-04 2016-10-04 Solarcity Corporation Photovoltaic devices with electroplated metal grids
US9502590B2 (en) 2012-10-04 2016-11-22 Solarcity Corporation Photovoltaic devices with electroplated metal grids
US9865754B2 (en) 2012-10-10 2018-01-09 Tesla, Inc. Hole collectors for silicon photovoltaic cells
US9281436B2 (en) 2012-12-28 2016-03-08 Solarcity Corporation Radio-frequency sputtering system with rotary target for fabricating solar cells
US10115839B2 (en) 2013-01-11 2018-10-30 Tesla, Inc. Module fabrication of solar cells with low resistivity electrodes
US10074755B2 (en) 2013-01-11 2018-09-11 Tesla, Inc. High efficiency solar panel
US10164127B2 (en) 2013-01-11 2018-12-25 Tesla, Inc. Module fabrication of solar cells with low resistivity electrodes
US9412884B2 (en) 2013-01-11 2016-08-09 Solarcity Corporation Module fabrication of solar cells with low resistivity electrodes
US9496427B2 (en) 2013-01-11 2016-11-15 Solarcity Corporation Module fabrication of solar cells with low resistivity electrodes
US9624595B2 (en) 2013-05-24 2017-04-18 Solarcity Corporation Electroplating apparatus with improved throughput
EP3522045A1 (fr) * 2014-05-27 2019-08-07 SunPower Corporation Module à cellules solaires en chevauchement
EP3506134A3 (fr) * 2014-05-27 2019-07-31 SunPower Corporation Module de cellule solaire à bardeau
US10309012B2 (en) 2014-07-03 2019-06-04 Tesla, Inc. Wafer carrier for reducing contamination from carbon particles and outgassing
US9899546B2 (en) 2014-12-05 2018-02-20 Tesla, Inc. Photovoltaic cells with electrodes adapted to house conductive paste
US9685579B2 (en) 2014-12-05 2017-06-20 Solarcity Corporation Photovoltaic structure cleaving system
US10672938B2 (en) 2014-12-05 2020-06-02 Solarcity Corporation Photovoltaic structure cleaving system
US9991412B2 (en) 2014-12-05 2018-06-05 Solarcity Corporation Systems for precision application of conductive adhesive paste on photovoltaic structures
US9793421B2 (en) 2014-12-05 2017-10-17 Solarcity Corporation Systems, methods and apparatus for precision automation of manufacturing solar panels
US9590132B2 (en) 2014-12-05 2017-03-07 Solarcity Corporation Systems and methods for cascading photovoltaic structures
US10230017B2 (en) 2014-12-05 2019-03-12 Solarcity Corporation Systems and methods for cascading photovoltaic structures
US10236406B2 (en) 2014-12-05 2019-03-19 Solarcity Corporation Systems and methods for targeted annealing of photovoltaic structures
US10043937B2 (en) 2014-12-05 2018-08-07 Solarcity Corporation Systems and method for precision automated placement of backsheet on PV modules
US9761744B2 (en) 2015-10-22 2017-09-12 Tesla, Inc. System and method for manufacturing photovoltaic structures with a metal seed layer
US10181536B2 (en) 2015-10-22 2019-01-15 Tesla, Inc. System and method for manufacturing photovoltaic structures with a metal seed layer
US9842956B2 (en) 2015-12-21 2017-12-12 Tesla, Inc. System and method for mass-production of high-efficiency photovoltaic structures
US9496429B1 (en) 2015-12-30 2016-11-15 Solarcity Corporation System and method for tin plating metal electrodes
US10115838B2 (en) 2016-04-19 2018-10-30 Tesla, Inc. Photovoltaic structures with interlocking busbars
US10672919B2 (en) 2017-09-19 2020-06-02 Tesla, Inc. Moisture-resistant solar cells for solar roof tiles
US11190128B2 (en) 2018-02-27 2021-11-30 Tesla, Inc. Parallel-connected solar roof tile modules

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