WO2008043207A1 - Light emitting system, light emitting apparatus and forming method thereof - Google Patents

Abstract

A light emitting system, a light emitting apparatus and the forming method thereof, the light emitting apparatus comprising a substrate (102), at least one light emitting chip (104) disposed on the substrate, a fluorescent particle layer (106) formed in a light emitting path of the light emitting chip, an annular member (110) disposed on the substrate to hold the light emitting chip, the annular member used for adjusting the direction of the light emitted from the light emitting chip, and a covering layer (108) fixed in the annular member and covering the fluorescent particle layer.

Description

 Light emitting system, light emitting device and manufacturing method thereof

TECHNICAL FIELD The present invention relates to an illumination system, a light-emitting device, and a method of fabricating the same, and more particularly to an illumination system having a light-emitting wafer, a light-emitting device, and a method of forming the same.

Background technique:

 Light Emitting Diode (LED) is widely used in various display products because of its high brightness, small size, light weight, low damage, low power consumption and long life. As follows: Apply a voltage to the diode to drive the electrons in the diode to combine with the holes. The energy generated by the combination is released in the form of light. In addition, a phosphor can be added to the structure to adjust the wavelength of the light ( Color) and intensity.

 Among them, the appearance of white light-emitting diodes extends the application of light-emitting diodes to the field of illumination. Compared with the most commonly used incandescent bulbs and fluorescent lamps in current illumination, LEDs have low heat generation, low power consumption and long life. Long, fast response, small size, etc., it is the focus of the industry.

At present, there are two main methods for manufacturing white light-emitting diodes. One is a single-crystal light-emitting diode light-emitting method, that is, a single light-emitting diode die is used to mix white phosphors with various phosphors. The current method mainly uses blue light-emitting diode chips and The light emitted by the yellow phosphor is mixed into white light, and the light emitted by the ultraviolet light emitting diode die, the blue phosphor, the green phosphor and the red phosphor is mixed into white light; one is a polycrystalline light emitting diode In a way, a plurality of LED chips are used to mix white phosphors with various phosphors. The current method mainly uses blue light emitting diodes, green light emitting diodes and red light emitting diodes to mix light into white light; Multiple hairs used in LED lighting The photodiode has different driving voltage, luminous intensity, temperature characteristics and length of life. In the application, these characteristics need to be matched with each other, which makes the design more difficult, so the cost of production is relatively high, so the current comparison is relatively high. The trend is toward the development of single crystal light-emitting diodes.

 However, at present, a light-emitting device using a light-emitting diode has a problem that side light cannot be effectively utilized. On the other hand, a side light leakage phenomenon such as blue light may also cause a color shift problem, and heat conduction and heat dissipation efficiency are also to be treated. Upgrade. Summary of the invention:

 In view of the above, in order to solve the above problems in the prior art, the present invention provides an illumination system, including: a carrier substrate; a plurality of light emitting wafers carried on the carrier substrate; an annular structure carried on the carrier substrate To accommodate the illuminating wafer, the annular structure includes an outer ring sidewall and an inner ring sidewall, and the illuminating wafer is located between the outer ring sidewall and the inner ring sidewall.

 In the illumination system of the present invention, since the light-emitting chip is located between the side wall of the outer ring and the side wall of the inner ring, the light emitted from the side of the light-emitting chip can be adjusted through the side wall of the outer ring and the side wall of the inner ring. The direction of the light emitted by the illuminating wafer.

 The invention further provides a light-emitting device, comprising: a carrier substrate; at least one light-emitting chip, carried on the carrier substrate; a phosphor particle layer formed on the surface of the light-emitting chip or the light-emitting path; an annular structure, carried on the carrier The substrate is mounted to accommodate the light-emitting wafer, wherein the annular structure is used to adjust the direction of the light emitted by the light-emitting chip; and an inner covering house is fixed in the annular structure and covers the phosphor particle layer.

The light-emitting device of the present invention can improve the luminous efficiency by adjusting the direction of the light emitted by the light-emitting chip through the annular structure, and can cover the phosphor particle layer by the inner cover layer fixed in the annular structure, thereby avoiding Fall off. The invention also provides a method for manufacturing a light-emitting device, comprising: providing a carrier substrate, at least one light-emitting chip being carried on the carrier substrate; providing an annular structure, being carried on the carrier substrate to accommodate the light-emitting chip; and a plurality of phosphor particles Mixing with a liquid without a binder to form a mixed solution; filling the mixed solution in the annular structure; and removing the liquid to agglomerate the phosphor particles into a phosphor particle layer and attaching at least to the light-emitting wafer in the ring structure .

 The method of manufacturing the light-emitting device also improves the problem of the general precipitation method. That is to say, the mixed liquid only needs to be filled in the annular structure, and since the mixed liquid in this portion is much smaller than the original mixed liquid, the liquid can be formed faster by removing the liquid by, for example, drying. The powder layer is attached to the wafer in the ring structure, which also improves the process efficiency. BRIEF DESCRIPTION OF THE DRAWINGS:

 Fig. 1 is a view showing a light-emitting device of this embodiment.

 Fig. 2 is a view showing another embodiment of the light-emitting device of the embodiment.

 Fig. 3 is a view showing the combined structure of Fig. 2.

 FIG. 4 is a diagram showing the arrangement of a plurality of conventional light-emitting wafers.

 FIG. 5 is a view showing the arrangement of the ring structure and the plurality of light-emitting wafers of the embodiment.

 6 is a diagram showing a ring structure of another embodiment and an arrangement of a plurality of light emitting wafers. FIG. 7 is a diagram showing the arrangement of a ring structure and a plurality of light-emitting wafers according to another embodiment. FIG. 8 is a diagram showing the arrangement of a ring structure and a plurality of light-emitting wafers according to another embodiment. FIG. 9 is a schematic view showing a manufacturing method of the light emitting device of the embodiment.

 10A to 10B are views showing a combined structure of a plurality of heat radiating portions of the embodiment.

11A to 11B are views showing a combined structure of a plurality of carrier substrates of the present embodiment. Best practice:

 The above and other objects, features and advantages of the present invention will become more <RTIgt;

 The present application is hereby incorporated by reference to the applicant's PCT Patent Application No. PCT/CN2006/002625, PCT Patent Application No. PCT/CN2006/001248, PCT/CN2005/00046, Chinese Patent Application No. 200510008606.0, and US Patent Application No. 11/059554. Reference to the present invention.

 In the following embodiments of the present invention, the light-emitting device having a ring structure and its heat conduction mode, and a combination of a plurality of light-emitting devices, and the application of the ring structure in the precipitation method are mainly explained, but these embodiments are only for explaining the present invention. The invention is not intended to limit the scope of the invention.

 In the present specification, the so-called "ring structure" refers to a closed structure. In the embodiment of the present invention, a rectangular shape such as a rectangle or a square, or a circular annular structure is illustrated as an illustration, but is not intended to limit the scope of the present invention; in other embodiments, the annular structure is The enclosed area can also be any other shape.

 The annular structure used in accordance with embodiments of the present invention, in addition to concentrating light from the sides of the wafer, is more resistant to heat sinking. In addition, the ring structure is not limited to a single ring structure, and may include a plurality of single ring structures or a multiple ring structure in different embodiments, and the light emitting chip may be disposed in a single ring structure or between adjacent ring structures. Here, the light-emitting chip may be composed of a single wafer, a plurality of wafers, or an array of wafers. For convenience of explanation, the following is referred to as a light-emitting wafer.

 Light-emitting device having a ring-shaped structure

1 is a light-emitting device or a light-emitting unit having a ring structure according to a preferred embodiment of the present invention; Yuan. 2 is a view showing the combined structure shown in FIG. 1.

 Referring to FIG. 1 and FIG. 2, the illuminating device or the illuminating unit 100 includes a carrier substrate 102 for carrying a single or multiple illuminating wafers. And a luminescent particle layer 106 disposed on the surface of the illuminating wafer 104 or its illuminating path, for example, composed of phosphor particles, which may optionally form a van der Waals force bond by drying without an adhesive, in this example, The phosphor particle layer 106 is an upper surface and side edges that completely cover the light emitting wafer 104. In a preferred embodiment, the light emitting device may select an annular structure 110 carried on the carrier substrate 102 to accommodate the light emitting wafer 104; and an inner cover layer 108 fixed in the annular structure 110 and covering the phosphor particle layer 106. . In this embodiment, the light-emitting unit 100 can constitute an illumination system, and the area enclosed by the annular structure 110 can be a polygonal shape, such as a rectangle or a pentagon, or a circular or elliptical shape. Please refer in particular to the circular structure shown in Figures 5-8.

 In general, the inner cover layer 108 can be formed by applying a soft polymer material such as silica gel to the ring structure, or by using a formed hard glass layer or an acrylic resin layer. The method is directly embedded in the annular structure 110 and pressed onto the phosphor particle layer 106, so that the phosphor particle layer is prevented from falling off.

 In another preferred embodiment, since the annular structure 110 can be used to adjust the direction of light emitted from the luminescent wafer 104, such as shadowing, reflecting, collecting, or focusing, the phosphor particle layer 106 does not completely cover the luminescent wafer side. At the same time, the phenomenon of blue light leakage on the side of the light-emitting chip 104 can be solved, and the problem of color shift of the light is improved.

The annular structure 110 can generally be a metal material having a reflective surface, or a plastic body, and the surface can form a reflective material layer, for example, a plating layer of chromium, nickel, silver, zinc fluoride, Or reflective materials such as magnesium sulfide.

 Wherein, since the annular structure 110 is disposed on the same surface as the light-emitting wafer 104, if a material having better heat dissipation characteristics, such as polishing to form a metal material having a reflective surface, heat dissipation efficiency can be improved.

 In addition, a lens 200 may be selectively covered on the above-mentioned light-emitting device or light-emitting unit, for example, made of glass, epoxy or PE plastic to cover the substrate 102, the light-emitting wafer 104, the inner cover 108, and the annular structure 110, The lens 200 is adhered to the carrier substrate 102 or the annular structure 110 to form a closed cavity. The sealed cavity may be a vacuum environment or filled with an inert gas to maintain stability in the closed cavity. In this example, the lens 200 It may also be fixed to the annular structure 110, for example, by an adhesive or a gasket to form a closed cavity 150.

 In another embodiment, the inner sidewall of the annular structure 110 forms an angle of 6, and 0 with the surface of the substrate 102. < θ < 90°, but preferably θ = 45°; the material of the annular structure 110 is a metal such as a stainless steel material; and a coating film may be selected on the surface of the annular structure 110 to increase the reflection effect.

 In particular, in this example, the phosphor particles in the phosphor particle layer 106 do not contain glue, so that the luminous efficiency can be increased. The number of wafers of the illuminating wafer 104 is determined according to needs, and may be, for example, single or multiple; in this example, the wafer is a light emitting diode.

In addition, in other examples, the shape of the area enclosed by the annular structure 110 may be appropriately changed as needed, for example, a rectangle, a circle, or other shapes; and the shape of the ring structure 110 itself may be arbitrarily changed. For example, the cross-sectional shape thereof may be trapezoidal, triangular or curved. In other embodiments, the area enclosed by the annular structure may also be any other shape, such as a space of a backlight module to fabricate a suitable elongated ring structure. Carrier substrate

 The carrier substrate 102 can be a metal substrate, such as an aluminum substrate, in this embodiment. In addition, in this example, a surface of the carrier substrate may be further formed with a planarization insulating layer 160, such as a metal oxide layer. One embodiment is anodized on the surface of the aluminum substrate 102 to form an aluminum oxide insulating layer having a thickness of about 30 to 35 um. .

 In the above embodiment, since the planarization insulating layer 160 and the substrate 102 can be tightly bonded, the thermal resistance is lowered and the heat conduction efficiency can be improved.

 Referring to FIG. 1 and FIG. 2 again, in the embodiment, the bottom of the carrier substrate 102 further includes a heat conducting portion 180 for accommodating a plurality of heat conducting tubes 112 for deriving heat flow caused by the light emitting wafer 104. In a preferred embodiment, the light emitting device 100 further selectively includes a heat sink portion 114 under the carrier substrate 102. The heat dissipating portion 114 can be closely adhered to the heat transfer tube 112 and the carrier substrate 102 through the corresponding recess 112a. In Fig. 1, the lower surface of the heat radiating portion 114 may include heat radiating fins 115 to promote heat dissipation.

 In addition, as shown in FIG. 2, in another embodiment, the heat pipe 112 may also extend from the heat conducting portion 180 to the heat radiating portions 212 and 214 to derive heat flow caused by the light emitting wafer.

As shown in FIG. 3, the lighting device 100 such as the combined street lamp or table lamp, in general, the heat dissipating portions 212 and 214 and the heat dissipating fins may be disposed under the carrier substrate 102 or outside the carrier substrate as needed, and the heat pipe 112 may be The heat conducting portion 180 extends. Wherein, the heat dissipation portions 212 and 214 also include a plurality of grooves 212a and 214a to accommodate the heat pipe 112. In addition, the heat dissipating portion and the heat dissipating fins may also be directly disposed on an external mechanism, such as the lamp body 300 shown in FIG. 3, and for the vehicle lamp, it may be disposed on the frame, so that The effect of expanding the heat dissipation area.

 The heat pipe 112 can increase the heat transfer efficiency, and includes a body having a vacuum sealed cavity. The body can be made of a heat dissipating metal such as copper or aluminum, and the vacuum sealed cavity is filled with a heat transfer fluid such as water or wick. The distribution is formed on the inner wall of the closed cavity. Therefore, when the heat transfer fluid in the heat transfer tube evaporates near the illuminating wafer 104 and flows to both ends of the body, it condenses at the cold regions at both ends, and then the capillary is pulled back by the capillary principle. Continue to conduct heat at the location. In this example, the heat pipe may further include a fixing device 210, such as a metal splint. When the light emitting device is assembled, the metal plate can clamp the heat conducting portion 180 and the heat radiating portions 114, 212, and 214, and then fix by a screw lock. .

 Patterned conductive layer

 Referring to FIG. 1 , in this example, a patterned conductive layer 170 is additionally formed on the surface of the planarization insulating layer 160 of the carrier substrate 102 , and includes a contact pad 170 a for connecting the luminescent wafer 104 through the wire 190 , and further The height of the bottom of the illuminating wafer 104 is the same as that of the contact pad 170a. Alternatively, a carrier portion 170b may be formed on the surface of the planarization insulating layer 160 to carry the luminescent wafer 104. In one embodiment, the luminescent wafer 104 can be affixed to the carrier portion 170b by laser brazing of the patterned conductive layer 170.

 In an embodiment in which the patterned conductive layer is formed, a metal material may be selectively deposited on the planarization insulating layer 160 by electroplating or magnetron sputtering as the patterned conductive layer 170. Another method is to use a screen print-conductive ink on the planarization insulating layer, and then thermally cure the conductive ink on the planarization insulating layer 160 as the patterned conductive layer 170.

The conductive ink can be a heat curable polymer resin (conductor filled with a conductive material) Filled thermosetting polymer resin ink), i ¹ column ^ US special: ^ 5859581 disclosed in the silver paste composition.

 Another embodiment is to use a high temperature process, such as 540 degrees Celsius, to form a patterned conductive layer comprising a contact pad 170a, and a carrier portion 170b that can be tightly bonded to the luminescent wafer. Generally, the silver paste can be mixed into the glass powder. Or a resin material to improve adhesion. Preferably, the indium material may be mixed with nano silver and glass powder as a silver paste to form a patterned conductive layer to increase thermal conductivity, and since the thermal curing temperature of the nano silver is only about 100 degrees. Therefore, the process temperature can be lowered to avoid damaging the planarization insulating layer.

 Since the patterning conductive layer and the planarization insulating layer are closely combined in the above manner, the thermal resistance can be reduced and the heat conduction efficiency can be improved.

 Method of manufacturing light emitting device

 The present embodiment provides a method of fabricating a light-emitting device, which is incorporated herein by reference.

 The manufacturing process of this embodiment includes the following steps, but the order of the steps may be adjusted according to the process requirements and is not limited thereto.

 Referring to FIG. 9, first, a substrate 102 is provided, wherein at least one illuminating wafer 104 is carried on the substrate 102, for example, an array of LED chips is fabricated on an aluminum substrate having a planarized aluminum oxide layer, as shown in FIG. Next, an annular structure 110 is provided, for example, carried on the substrate 102 using a plastic annular structure having a chrome-plated reflective surface to accommodate the luminescent wafer 104.

The plurality of phosphor particles are then mixed with a non-adhesive-containing liquid to form a mixture 900. Next, the mixture can be filled into the annular structure 110, for example, by nozzle plating or dripping. Then remove the liquid, for example, using a drying process, so that the fluorescent particles are agglomerated by van der Waals force A phosphor particle layer 106 is formed and attached to at least the light-emitting wafer 104 in the ring structure 110.

 Wherein, in this embodiment, the phosphor particles may be nanosized to be more uniformly mixed with the liquid without the binder to form a mixed solution. Another way of homogenizing is to selectively mix the organic solvent 910 into the liquid without the adhesive so that the phosphor particles are more uniformly mixed with the non-adhesive-containing liquid to form a mixed solution. Finally, the liquid and the organic solvent are removed to agglomerate the phosphor particles into a phosphor particle layer and adhere to at least the light-emitting wafer in the ring structure. For example, the organic solvent is generally selected from paraffin or rosin oil, and finally, the organic solvent can be selected. Excessive temperature procedures such as 320 degrees Celsius or less to remove organic solvents.

 The annular structure 110 used in accordance with an embodiment of the present invention is to increase the efficiency of the conventional precipitation method. That is, only a small amount of the mixed liquid remains in the inner region of the annular structure 110, so that the remaining liquid can be removed more quickly by the drying method to form the phosphor particle layer 106 and adhere to the wafer in the ring structure 110. In this way, the process efficiency can be improved.

 In order to avoid the detachment of the phosphor particles, the embodiment may optionally embed a formed hard glass layer or an acryl resin layer in the annular structure 110 to be pressed against the phosphor particle layer 106 as an inner cover layer.

 Arrangement of multiple illuminating wafers

 Referring to FIG. 4, the conventional multi-wafer arrangement is arranged in a matrix, so that the side edges of the respective illuminating wafers, such as 401, 403, and 405, respectively shield the side light emitted by the sides of other illuminating wafers, thereby detracting. Luminous efficiency.

Referring to FIG. 5, in order to improve luminous efficiency, the arrangement and annular structure of the luminescent wafer disclosed in this embodiment can be applied to the illuminating device described in the previous embodiment. The light emitting device includes a plurality of light emitting chips 520 carried by the carrier substrate, and an annular structure carried on the carrier substrate to accommodate the light emitting wafer. The ring structure may be a plurality of separate single ring structures or, in this case, A plurality of connected single ring structures include an outer ring sidewall 510 and an inner ring sidewall 530, and the light emitting chip 520 is located between the outer ring sidewall 510 and the inner ring sidewall 530. The outer ring side wall 510 and the inner ring side wall 530 each include a reflective surface for reflecting light emitted from the side of the light emitting chip 520.

 In this embodiment, the light emitting wafer may include a plurality of sides, and the light L emitted by each side is substantially toward the outer ring side wall 510 or the inner ring side wall 530.

 In addition, between any two adjacent wafers 520 and 540, a shortest pitch p, such as the distance from the end point 520a to the end point 540a, is included. This shortest pitch p may cause the projection surface A1 of the side surface of the wafer 520 and the side of the wafer 540. The overlap area of the side surface A2 is substantially zero or substantially less than 50% of the side surface area A1 of the wafer 520. In a preferred embodiment, the illuminating wafers are quadrilateral and may be arranged in a diamond arrangement.

 Referring to FIG. 6, in a rectangular ring structure 600, the light emitting chip 620 is located between the outer ring sidewall 610 and the inner ring sidewall 630, wherein each of the light emitting wafers 620 includes a pair of two ends 620a on the oblique line. And 620b, and the two ends of the illuminating wafer are located on an axis 640 surrounding the inner ring side wall 630 or on a parallel line parallel to the axis 640.

 Referring to FIG. 7, in a circular ring structure 700, the light emitting chip 720 is located between the outer ring sidewall 710 and the inner ring sidewall 730, wherein each of the light emitting wafers 720 includes a pair of two ends located on the oblique line. 720a and 720b, and the ends of the illuminating wafer are located on an axis 740 surrounding the inner ring sidewall 730 or on a parallel line parallel to the axis 740.

Referring to FIG. 8, in a specific embodiment, such as a circular ring structure 800, The plurality of light-emitting chips 820 are disposed at an appropriate interval between the outer ring sidewall 810 and the inner ring sidewall 830, so that most of the light emitted by each side is substantially toward the outer ring sidewall 810 or the inner ring. The sidewall 830 can thus make the area of overlap of the projection surface of the side surface of the wafer 820 and the side surface of the wafer 840 substantially zero or substantially less than 50% of the surface area of the side of the wafer 820.

 The circular or rectangular annular structure may also continue to form a ring side wall outward or inward to form a multi-ring structure, and the light-emitting chip may be disposed between the side walls of any two rings.

 Through the arrangement of the above-mentioned light-emitting wafers, the light emitted from the sides of the light-emitting chip can be effectively guided to the reflective surface of the outer ring side wall or the inner ring side wall without being blocked by other light-emitting chips, thereby effectively improving the light emission. effectiveness.

 Connection structure of a plurality of light-emitting devices

 In the above embodiments, the thermal insulation can improve the thermal conductivity by the close combination of the layers of the illuminating device. However, for a combination of a plurality of illuminating devices, a connection structure capable of rapid thermal conduction is still needed, such as the embodiment. 10A to 10B and Figs. 11A to 11B.

Referring to FIG. 10A to FIG. 10B, the heat dissipating portion 1010 or 1030 is formed according to the above embodiment. The heat dissipating portion 1010 includes a connecting portion 1012, which may be located at two sides of the heat dissipating portion. In a preferred embodiment, The connecting portion 1012 includes a fitting hole 1014. The heat dissipating portion 1030 also includes a connecting portion 1032. The connecting portion 1032 can be located at two sides of the heat dissipating portion. In a preferred embodiment, the connecting portion 1032 includes a fitting hole 1034 or can be embedded. The chimeric chimera 1036. Therefore, the combination of any two light-emitting devices can be connected by the mutual fitting of the connecting portions of the heat-dissipating portions, which can greatly increase the dispersion of the single light-emitting device by sharing a plurality of heat-dissipating portions. Hot area.

 Referring to FIG. 11A to FIG. 11B , another embodiment of connecting the two light-emitting devices 1170 is to provide a connection portion on the carrier substrates 1110 and 1130 , for example, a connection portion 1112 having a chisel 1114 is formed on at least one side of the carrier substrate 1110 . Or, at least one side of the carrier substrate 1130 is formed with a connecting portion 1132 having a fitting hole 1134. Another example is that a connecting portion having a fitting and a fitting hole is formed on both sides of the carrier substrate 1110. . Therefore, the respective light-emitting devices can be combined by the connection portion of the carrier substrate.

 Although the present invention has been described above by way of preferred embodiments, the preferred embodiments are not intended to limit the invention. A person skilled in the art will be able to make various modifications and additions to the preferred embodiment without departing from the spirit and scope of the invention, and the scope of the invention is defined by the scope of the claims.

 A brief description of the symbols in the drawings is as follows:

Light-emitting device 100; carrier substrate 102; light-emitting wafer 104; luminescent powder layer 106; annular structure 110; inner cover layer 108; lens 200; sealed cavity 150; planarization insulating layer 160; heat-transfer portion 180; heat-conducting tube 112; 102a; heat dissipation portion 114; heat dissipation fin 115; patterned conductive layer 170; contact pad 170b; wire 190; bearing portion 170b; groove 102a; groove 112a; heat dissipation portion 212, 214; groove 212a, 214a; lamp body 300; fixing device 210; light-emitting chip 401, 403, 405; light-emitting chip 520; outer ring side wall 510; inner ring side wall 530; side light L; shortest pitch p; end points 520a, 540a; projection surface A1; wafer side Side surface A2; rectangular ring structure 600; light emitting chip 620; outer ring side wall 610; inner ring side wall 630; end points 620a, 620b; axis 640; circular ring structure 700; light emitting chip 720; outer ring side wall 710; Ring side wall 730; end points 720a, 720b; axis 740; Circular ring structure 800; outer ring side wall 810; inner ring side wall 830; light emitting chip 820; heat dissipating portion 1010, 1030; connecting portion 1012; fitting hole 1014; connecting portion 1032; fitting hole 1034; Light-emitting device 1170; carrier substrate 1110, 1130; fitting 1114; connecting portion 1112; fitting hole 1134; connecting portion 1132.

Claims

Rights request An illumination system, characterized in that the illumination system comprises:  a carrier substrate;  a plurality of light emitting chips are carried on the carrier substrate;  An annular structure is disposed on the carrier substrate to accommodate the light emitting chip, the ring structure includes an outer ring sidewall and an inner ring sidewall, and the light emitting chip is located on the outer ring sidewall and the inner ring sidewall between.  2. The illumination system of claim 1 wherein the illuminating wafer comprises a plurality of sides and the light emitted by each side is substantially toward the outer ring side wall or the inner ring side wall.  3. The illumination system of claim 1 wherein the outer ring sidewall and the inner ring sidewall surface comprise a reflective surface.  4. The illumination system according to claim 3, wherein a gap between any two adjacent first wafers and a second wafer includes a shortest pitch such that a projection surface of the first wafer side surface and the first The side surface overlap area of the two wafers is zero or substantially less than 50% of the surface area of the first wafer side.  The light emitting system according to claim 1, wherein the light emitting wafer has a quadrangular shape. 6. The illumination system of claim 3, wherein each of the illuminating wafers comprises a pair of two end points on the oblique line, and the two end points of the illuminating wafer are located on an axis surrounding the side wall of the inner ring On or parallel to the parallel line of the axis. 7. A light-emitting device, characterized in that: the light-emitting device comprises: a carrier substrate;  At least one light emitting chip is carried on the carrier substrate;  a phosphor particle layer formed on a surface or a light-emitting path of the light-emitting chip;  An annular structure is carried on the carrier substrate to accommodate the light emitting wafer, wherein the annular structure is used to adjust a direction of light emitted by the light emitting chip;  An inner cover layer is fixed in the annular structure and covers the phosphor particle layer.  The illuminating device according to claim 7, further comprising a lens attached to the carrier substrate or the annular structure to form a closed cavity, and the sealed cavity is filled with a vacuum environment or filled with Inert gas.  9. The illumination device of claim 7, wherein the surface of the carrier substrate further comprises a planarization insulating layer.  The light emitting device according to claim 9, wherein the carrier substrate is a metal substrate, and the planarization insulating layer is a metal oxide layer.  The light emitting device according to claim 9, wherein the carrier substrate is an aluminum substrate, and the planarization insulating layer is an anodized aluminum oxide layer.  The illuminating device according to claim 7, further comprising a heat conducting portion at the bottom of the carrier substrate, which accommodates a plurality of heat conducting tubes to derive heat flow caused by the illuminating wafer.  13. The illumination device of claim 12, wherein the heat conductive portion surface comprises a plurality of grooves to accommodate the heat pipe. 14. The illumination device of claim 9, wherein the planarization insulating layer surface further comprises a patterned conductive layer. 15. The illumination device of claim 14, wherein the patterned conductive layer comprises:  a contact pad connecting the light emitting wafer through a wire;  a carrying portion for carrying the light emitting chip.  16. A light emitting device according to claim 15, wherein the patterned conductive layer is formed by thermal curing of a silver paste which is doped with a glass frit or a polymer resin material.  The light emitting device according to claim 16, wherein the silver paste is doped with an indium material and nano silver.  18. The illuminating device according to claim 12, further comprising a heat radiating portion, wherein the heat conducting pipe extends from the heat conducting portion to the heat radiating portion to conduct heat flow of the illuminating wafer to the heat radiating portion.  The illuminating device according to claim 18, wherein at least one side of the carrier substrate or the heat dissipating portion comprises a connecting portion having a fitting or a fitting hole, and a carrying substrate of another illuminating device Or the connecting portion of the heat sink having the fitting or the fitting hole is joined.  The light emitting device according to claim 18, wherein the heat dissipating portion is disposed under the carrier substrate, outside of the carrier substrate, or an external mechanism.  21. The illumination device of claim 20, wherein the heat sink comprises a plurality of slots to accommodate the heat pipe.  The light-emitting device according to claim 7, wherein the inner cover layer comprises a formed hard glass layer or an acrylic resin layer which is fitted into the annular structure and is pressed against the phosphor particles. On the floor. 23. The light emitting device of claim 7, wherein the phosphor particle layer is not Contains an adhesive.  A method of manufacturing a light-emitting device, characterized in that the method of manufacturing the light-emitting device comprises:  Providing a carrier substrate, at least one light emitting chip being carried on the carrier substrate;  Providing an annular structure carried on the carrier substrate to accommodate the light emitting wafer;  Mixing a plurality of phosphor particles with a liquid without a binder to form a mixed solution;  Filling the mixture in the annular structure; and  The liquid is removed to agglomerate the phosphor particles into a phosphor particle layer and adhere to at least the light-emitting wafer within the annular structure.  The method of manufacturing a light-emitting device according to claim 24, further comprising nanonizing the phosphor particles to uniformly mix with the non-adhesive-containing liquid to form a mixed liquid.  The method of manufacturing a light emitting device according to claim 24, further comprising:  Mixing an organic solvent into the adhesive-free liquid to uniformly mix the phosphor particles with the non-adhesive-containing liquid to form a mixed solution;  The liquid and the organic solvent are removed to agglomerate the phosphor particles into a phosphor particle layer and adhere to at least the wafer within the ring structure.  27. The method of manufacturing a light emitting device according to claim 24, further comprising:  Forming a planarization insulating layer on the carrier substrate; Forming a patterned conductive layer on the planarization insulating layer, wherein the patterned conductive layer a contact pad is included to connect the illuminating wafer through a wire; and a carrying portion for carrying the illuminating wafer.  28. The method of fabricating a light emitting device according to claim 27, further comprising: laser welding the patterned conductive layer to fix the light emitting wafer on the carrier.  The method of manufacturing a light-emitting device according to claim 27, wherein the method of forming the patterned conductive layer comprises plating a metal material on the planarization insulating layer by electroplating or magnetron sputtering as the pattern Conductive layer.  30. The method of fabricating a light emitting device according to claim 27, wherein the method of forming the patterned conductive layer comprises:  Photographically printing a conductive ink on the planarization insulating layer;  The conductive ink is thermally cured on the planarization insulating layer to serve as the patterned conductive layer. The method of manufacturing a light-emitting device according to claim 27, further comprising embedding a formed hard glass layer or an acryl resin layer in the annular structure to be pressed onto the phosphor particle layer. , as an inner cover.