WO2007145110A1 - Method for producing lithium tantalate single crystal - Google Patents
Method for producing lithium tantalate single crystal Download PDFInfo
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- WO2007145110A1 WO2007145110A1 PCT/JP2007/061430 JP2007061430W WO2007145110A1 WO 2007145110 A1 WO2007145110 A1 WO 2007145110A1 JP 2007061430 W JP2007061430 W JP 2007061430W WO 2007145110 A1 WO2007145110 A1 WO 2007145110A1
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- lithium tantalate
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/16—Oxides
- C30B29/22—Complex oxides
- C30B29/30—Niobates; Vanadates; Tantalates
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F2202/00—Materials and properties
- G02F2202/20—LiNbO3, LiTaO3
Definitions
- the present invention relates to a method for producing a lithium tantalate single crystal, and more particularly to a method for producing a lithium tantalate single crystal that can suppress yellow coloring and improve the transmittance of visible light.
- lithium tantalate single crystals have been used as materials for optical elements, piezoelectric elements, surface acoustic wave filters, and the like for modulating laser light.
- Patent Document 1 Japanese Patent Laid-Open No. 2001-316195 discloses a step of melting a raw material in a crucible placed inside a growth tank, The step of introducing an inert gas into the growth tank so that the oxygen concentration in the growth tank is 0.1 volume% or more and 1.2 volume% or less, and by pulling up while rotating the lifting shaft, And a step of growing a single crystal at the end of the substrate (see, for example, claim 6, paragraphs [0051] to [0071] of Patent Document 1)
- Patent Document 2 Japanese Patent Laid-Open No. 6-234597 discloses a method in which a pulling atmosphere of a lithium tantalate single crystal is an inert gas atmosphere containing 0.2 to 1.5% by volume of oxygen. (See, for example, claim 5 of Patent Document 2).
- Patent Document 1 Japanese Patent Laid-Open No. 2001-316195
- Patent Document 2 JP-A-6-234597
- an object of the present invention is to provide a method for producing a lithium tantalate single crystal capable of improving visible light transmittance by suppressing yellow coloring.
- the present invention includes a step of forming a grown crystal from a raw material melt in a first atmosphere gas containing an inert gas as a main component and oxygen in an amount of 0.04% by volume or more and 0.08% by volume or less. Cooling the grown crystal in a second atmosphere gas containing an inert gas as a main component and having an oxygen concentration of 0.01% by volume or less; and heating the grown crystal after cooling to a Curie temperature or higher; A step of cooling the grown crystal while passing an electric current through the grown crystal after heating, and (the number of moles of lithium oxide) Z (number of moles of lithium oxide + number of moles of tantalum oxide) in the grown crystal is 0. This is a method for producing a lithium tantalate single crystal of 49 or more and 0.50 or less.
- the "main component” means 50% by volume or more of the entire gas. That is, in the present invention, 50% by volume or more of the first atmosphere gas is composed of an inert gas, and 50% by volume or more of the second atmosphere gas is composed of an inert gas.
- the oxygen concentration of the second atmospheric gas may be 0% by volume.
- the raw material melt is preferably prepared by adding 1 mol% or more and 5 mol% or less of magnesium oxide. .
- the raw material melt is preferably prepared by adding 0.1 mol% or more and 1 mol% or less of scandium oxide. .
- the raw material melt is preferably prepared by adding 0.5 to 3 mol% of zinc oxide.
- the raw material melt is an acid solution.
- scandium is added in an amount of 0.1 mol% to 1 mol% and zinc oxide is added in an amount of 1 mol% to 3 mol%.
- FIG. 1 is a diagram showing a schematic configuration of an example of an apparatus used in the method for producing a lithium tantalate single crystal of the present invention.
- FIG. 2 is a schematic cross-sectional view illustrating an example of a first step in the present invention.
- FIG. 3 is a schematic cross-sectional view illustrating an example of a second step in the present invention.
- FIG. 4 is a schematic cross-sectional view illustrating an example of a third step and an example of a fourth step in the present invention.
- FIG. 1 shows a schematic configuration of an example of an apparatus used in the method for producing a lithium tantalate single crystal of the present invention.
- This equipment consists of a growth device body 1, raw material supply device 2, load cell 3, vacuum pump 4, flow meter 5, flow crystal growth of raw material melt and lithium tantalate single crystal by liquid phase growth.
- a mass flow controller 6, an oxygen concentration meter 7, an oxygen gas supply device 8 and a nitrogen gas supply device 9 are provided.
- a raw material supply device 2 a load cell 3, a vacuum pump 4, and an oxygen concentration meter 7 are attached to the growth apparatus main body 1.
- oxygen supplied from the oxygen gas supply device 8 and nitrogen as an inert gas supplied from the nitrogen gas supply device 9 are controlled in flow rate by the mass flow controller 6 and then mixed. Then, the mixed gas of oxygen and nitrogen is introduced into the growth apparatus main body 1, the raw material supply apparatus 2 and the load cell 3 through gas pipes, respectively.
- the mixed gas introduced into the raw material supply device 2 and the load cell 3 flows into the growth apparatus main body 1 and merges with the mixed gas directly introduced into the growth apparatus main body 1 in the growth apparatus main body 1.
- the mixed gas in the growth apparatus main body 1 flows from the exhaust port provided in the growth apparatus main body 1 to the exhaust pipe.
- the oxygen concentration meter 7 attached to the exhaust pipe causes the mixed gas in the growth apparatus main body 1 to flow.
- the oxygen concentration in the atmospheric gas is measured.
- FIG. 2 shows a schematic cross section of an example of the growing apparatus main body 1 shown in FIG.
- the crucible 14 is installed at the lower part of the heat insulation furnace material 11
- the lid body 10 is installed at the upper part of the heat insulation furnace material 11.
- a high-frequency coil 12 is installed outside the crucible 14, and a pulling shaft 13 having a seed crystal 16 at the end is installed through the center of the lid 10.
- a raw material melt 15 serving as a raw material of a lithium tantalate single crystal is accommodated in a crucible 14. Then, the seed crystal 16 provided on the pulling shaft 13 is immersed in the raw material melt 15 and pulled upward while rotating the pulling shaft 13, so that the lithium tantalate single crystal is formed on the surface of the seed crystal 16. The grown crystal 17 is gradually formed.
- the grown crystal is formed from the raw material melt in the first atmosphere gas containing an inert gas as a main component and oxygen in an amount of 0.04 volume% or more and 0.08 volume% or less.
- the first step is performed. This process will be described with reference to FIG. 2 as an example.
- the atmosphere inside the growth apparatus main body 1 contains an inert gas as a main component and oxygen is contained at 0.04 vol% or more.
- a first atmosphere gas atmosphere containing less than or equal to volume% is formed, and a grown crystal 17 that becomes a lithium tantalate single crystal is formed from the raw material melt 15 in the atmosphere of the first atmosphere gas.
- the total pressure of the atmosphere inside the growth apparatus main body 1 can be set to 1 atmosphere.
- a step (second step) of cooling the grown crystal is performed in the second atmosphere gas having an oxygen concentration of 0.01% by volume or less.
- the atmosphere inside the growth apparatus main body 1 is the second atmosphere having an oxygen concentration of 0.01 vol% or less immediately from the atmosphere of the first atmosphere gas.
- the atmosphere is changed to the atmosphere of the atmosphere gas, and the grown crystal 17 is cooled while being separated from the raw material melt 15 in the atmosphere of the second atmosphere gas.
- the total pressure of the atmosphere inside the growth apparatus body 1 can be set to 1 atmosphere.
- a step (third step) of heating the grown crystal cooled in the second step above the Curie temperature is performed.
- FIG. 4 is used to explain this process.
- the grown crystal 17 after cooling is sandwiched between the electrodes 19 and 20 placed on the surface perpendicular to the direction for the single domain treatment.
- a heating device 18 such as a resistance heating device.
- an electric current is passed through the grown crystal 17 in the direction for performing the single domain treatment through the electrodes 19 and 20.
- the Curie temperature refers to a temperature at which a ferroelectric material transitions to a paraelectric material.
- the Curie temperature of a lithium tantalate single crystal is a force that varies depending on the molar ratio of lithium and tantalum that make up the lithium tantalate single crystal.
- the temperature is either 600 ° C to 700 ° C. Temperature.
- a step (fourth step) is performed in which the grown crystal is cooled while an electric current is applied to the grown crystal heated in the third step.
- This process will be described with reference to FIG. 4, for example.
- the growth crystal 17 heated to a temperature above the Curie temperature is passed through the electrodes 19 and 20 while passing a current in the direction for single domain treatment. Cool down.
- the lower limit of the current density of the direct current flowing through the grown crystal 17 can be set to, for example, 0. OlmAZcm 2 or more.
- the growth The formed crystal 17 is preferably cooled at a cooling rate of 50 ° C. Zh or less while a direct current is passed.
- the cooling rate of 50 ° CZh or lower means the rate at which the temperature decreases by 50 ° C per hour.
- the composition of the lithium tantalate single crystal is a congruent melt composition. This is not a stoichiometric composition.
- the growth crystal (number of moles of lithium oxide) Z (number of moles of lithium oxide + number of moles of tantalum oxide) is around 0.485, and there are many tantalum ions with fewer lithium ions.
- tantalum ion occupies part of the site that should be occupied by lithium ions. As a result, vacancies are generated to compensate for the charges. This vacancy is considered to cause light absorption.
- the number of moles of lithium oxide) Z (number of moles of lithium oxide + number of moles of tantalum oxide) is grown from the raw material melt by liquid phase growth of grown crystals with a ratio of 0.49 to 0.50 (first step).
- Lithium oxide such as Li 2 O and LiO can be prevented from splashing vapor, and the above first
- the second to fourth steps described above were performed in this order, so that the lithium tantalate single crystal was less likely to be colored yellow, and the visible light transmittance could be improved.
- the present invention has been completed.
- the present inventor when introducing a different ion such as magnesium ion, zinc ion or scandium ion as an additive, these ions are incorporated into the lithium tantalate single crystal.
- a different ion such as magnesium ion, zinc ion or scandium ion as an additive
- these ions are incorporated into the lithium tantalate single crystal.
- tantalum ion occupies the site that should occupy! /, And as a result, the vacancies causing light absorption are reduced, and the transmittance of visible light is improved.
- the raw material melt is not particularly limited as long as it can produce a lithium tantalate single crystal, and the lithium tantalate single crystal is yellow even if it can be used.
- the raw material melt may be lithium oxide (L
- the raw material melt is more preferably prepared by adding 1 mol% or more and 5 mol% or less of magnesium oxide (MgO). In this case, it tends to be possible to further reduce the yellow coloration of the lithium tantalate single crystal.
- MgO magnesium oxide
- MgO is added in an amount of 1 mol% or more and 5 mol% or less, MgO is added so as to satisfy the following formula (1).
- scandium oxide (Sc 2 O 3) is 0.1 mol% or more and 1 mol% or less.
- the raw material melt is more preferably prepared by adding 0.5 to 3 mol% of zinc oxide ( ⁇ ). Also in this case, the lithium tantalate single crystal is yellow It tends to be possible to further reduce the coloring.
- ZnO force of 0.5 mol% or more and 3 mol% or less added means that ZnO is added so as to satisfy the following formula (3)!
- ScO is added in an amount of 0.1 mol% to 1 mol%.
- ZnO is added at 1 mol% or more and 3 mol% or less. Also in this case, it tends to be possible to further reduce the yellow coloration of the lithium tantalate single crystal.
- the force described in the case of growing a lithium tantalate single crystal mainly using the Tyoklalsky (CZ) method in addition to the CZ method, a continuous raw material supply type double crucible is used.
- a growth method such as a method, a solution method (Top-Seeded Solution Growth method) or a Bridgeman method can also be used.
- the mixture was stirred and mixed for 1 hour while paying attention to moisture absorption. Then, it was calcined by heating at 1300 ° C for 8 hours.
- the calcined product is placed in an iridium crucible while paying attention to moisture absorption, and is homogenized for 1 hour while being heated to prepare a raw material melt.
- tantalum acid is obtained by the CZ method.
- Growing lithium single crystal (number of moles of Li 2 O)
- a grown crystal to be 497 was formed (Sample Nos. 11 to 15).
- Example numbers 16 to 20 were formed to become 0.490 (sample numbers 1 to 5), 0.493 (sample numbers 6 to: L0), and 0.500 (sample numbers 16 to 20), respectively.
- a grown crystal having a number of 2 + the number of moles of TaO was 0.495 (sample numbers 24 to 25).
- a grown crystal having a + Ta 2 O mole number of 0.497 was formed (Sample Nos. 26 to 27).
- a grown crystal was formed in which the number of moles of Li 2 O + the number of moles of Ta 2 O was 0.497 (Sample No. 28).
- the growth conditions of the growth crystals of sample numbers 1 to 34 are as follows: crystal growth direction is Z-axis direction, pull-up shaft rotation speed is 6rpm, bow I lift-up shaft bow
- the oxygen concentration is 0.03 vol 0/0 as the first atmosphere gas at the time of forming the grown crystal of Sample No. 1-34, 0.04 volume 0/0, 0.06 volume 0/0, 0.08 volume 0/0 or 0. nitrogen containing oxygen is 1 volume 0/0 was used.
- the oxygen concentration (% by volume) was measured using an oxygen concentration meter (LC--Oxygen concentration meter (LC—) manufactured by Toray Engineering Co., Ltd. 700) measured by).
- the total pressure of the first atmosphere gas during the growth of the growth crystal was set to 1 atmosphere.
- the above composition is not a coincidence melt composition, and therefore, growth crystals of sample numbers 1 to 34 were formed at 10% by mass of the raw material melt without the influence of compositional deviation. If the raw material melt is 10% by mass or less, it is not necessary to supply the raw material for correcting the composition deviation. However, if it exceeds 10% by mass of the raw material melt, in order to correct the composition deviation, for example, It is necessary to supply the raw material from the raw material supply device 2 shown in FIG.
- the growth crystal was separated from the raw material melt, the supply of oxygen to the oxygen supply device was stopped, and only nitrogen was introduced into the growth device main body. Then, cooling of the grown crystal starts when the above oxygen concentration meter shows 0.01 volume% (that is, the second oxygen concentration is not more than 0.01 volume% and the remainder other than oxygen is nitrogen. (Cooled in atmospheric gas). This operation was performed for each of the grown crystals of sample numbers 1 to 34. The time from when the supply of oxygen was stopped until the oxygen concentration meter showed 0.01% by volume was within 5 hours. The total pressure of the second atmosphere gas during cooling of the grown crystal was set to 1 atmosphere.
- the grown crystals of sample numbers 1 to 34 were blackened. Then, the blackened growth crystals of Sample Nos. 1 to 34 were placed in a resistance heating furnace while being sandwiched between Pt plates so as to face each other in the Z-axis direction. After that, these were heated to 750 ° C in the atmosphere and sufficiently maintained at that temperature, and then 20 ° while flowing a direct current with a current density of 0.02 mAZcm 2 through the growth crystal using the Pt plate as an electrode. The grown crystal was cooled to room temperature at the cooling rate of CZh.
- transmittance was measured using a spectrophotometer (UV-2500 manufactured by Shimadzu Corp.) for each of the parallel plate samples of sample numbers 1 to 34 having a thickness of 10 mm and a thickness of 3 mm.
- the transmittance was measured using an integrating sphere and arranged so that the light beam was incident perpendicularly to the surface of the parallel plate sample.
- the measured transmittance (linear transmittance) for parallel plate samples with thicknesses of 10mm and 3mm was calculated using the following equation (6) for each wavelength of light. 10mm thick parallel plate using It was converted to the internal transmittance of the sample.
- ⁇ represents the internal transmittance of a 10 mm thick parallel plate sample
- ⁇ d represents the thickness difference between a 10 mm thick parallel plate sample and a 3 mm thick parallel plate sample
- T is
- Tables 1 and 2 show the composition of the raw material melt of the grown crystals of sample numbers 1 to 34 and the number of moles of Li 2 O in the grown crystals of sample numbers 1 to 34
- the oxygen concentration of the 1st atmosphere gas at the time of formation of the growth crystal of sample numbers 1-34 is shown.
- Table 1 and Table 2 show that the grown crystals of Sample Nos. 1 to 34 were visually observed, and the results for the parallel plate samples of Sample Nos. 1 to 34 with respect to visible light (blue) with a wavelength of 400 nm are shown.
- the values of the internal transmittance and the results of visual observation of the coloration of the crystals immediately before cutting out the grown crystals of sample numbers 1 to 34 are shown.
- the value of the number of moles of Li 2 O + the number of moles of Ta 2 O is the value of the grown crystal (number of moles of Li 2 O)
- the Curie temperature of the grown crystal was measured by differential thermal analysis, and the measured temperature force was calculated.
- the lithium tantalate single crystals of Sample Nos. 2 to 4 formed in the lower range are formed with the raw material melt force of the same composition, but the oxygen concentration of the first atmosphere gas is 0.04% by volume or more. Compared to the lithium tantalate single crystals of Sample No. 1 and Sample No. 5 that are not in the volume% or less range,
- the yellow coloration of the crystals is suppressed, and the internal transmittance of visible light (blue) with a wavelength of 400 nm is improved.
- the lithium tantalate single crystals of Sample Nos. 7 to 9 formed in the range where the oxygen concentration of the first atmosphere gas is 0.04% by volume or more and 0.08% by volume or less have the same composition.
- the oxygen concentration of the first atmosphere gas is not in the range of 0.04 volume% or more and 0.08 volume% or less.
- the yellow coloration of the crystal is suppressed and the internal transmittance of visible light (blue) having a wavelength of 400 nm is improved.
- the lithium tantalate single crystals of Sample Nos. 12 to 14 formed in the range where the oxygen concentration of the first atmosphere gas is 0.04 vol% or more and 0.08 vol% or less have the same composition.
- the yellow coloration of the crystal is suppressed, and the internal transmittance of visible light (blue) with a wavelength of 400 nm is improved.
- the lithium tantalate single crystals of Sample Nos. 17 to 19 formed in the range where the oxygen concentration of the first atmosphere gas is 0.04 vol% or more and 0.08 vol% or less have the same composition.
- the yellow coloration of the crystal is suppressed, and the internal transmittance of visible light (blue) with a wavelength of 400 nm is improved.
- the lithium tantalate single crystals of Sample Nos. 21 to 34 formed from the calcined raw material melt tend to suppress the yellow coloration of the crystals and transmit visible light (blue) with a wavelength of 400 nm. The rate tended to improve. [0078]
- the embodiments and examples disclosed this time should be considered as illustrative in all points and not restrictive.
- the scope of the present invention is defined by the terms of the claims, rather than the description above, and is intended to include any modifications within the scope and meaning equivalent to the terms of the claims.
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Abstract
Description
明 細 書 Specification
タンタル酸リチウム単結晶の製造方法 Method for producing lithium tantalate single crystal
技術分野 Technical field
[0001] 本発明は、タンタル酸リチウム単結晶の製造方法に関し、特に、黄色の着色を抑え て可視光の透過率を向上することができるタンタル酸リチウム単結晶の製造方法に 関する。 [0001] The present invention relates to a method for producing a lithium tantalate single crystal, and more particularly to a method for producing a lithium tantalate single crystal that can suppress yellow coloring and improve the transmittance of visible light.
背景技術 Background art
[0002] 従来から、タンタル酸リチウム単結晶は、レーザ光を変調するための光学素子、ピ ェゾ素子または表面弾性波フィルタなどの材料として用いられて 、る。 Conventionally, lithium tantalate single crystals have been used as materials for optical elements, piezoelectric elements, surface acoustic wave filters, and the like for modulating laser light.
[0003] このようなタンタル酸リチウム単結晶の製造方法として、たとえば特許文献 1 (特開 2 001— 316195号公報)には、育成槽の内部に配置された坩堝において原料を溶融 するステップと、育成槽内部の酸素濃度が 0. 1体積%以上 1. 2体積%以下となるよ うに不活性ガスを育成槽内部に導入するステップと、引き上げ軸を回転させながら引 き上げることによって、引き上げ軸の端部に単結晶を育成するステップとを含む方法 が開示されている (たとえば、特許文献 1の請求項 6、段落 [0051]〜[0071]等参照 [0003] As a method for producing such a lithium tantalate single crystal, for example, Patent Document 1 (Japanese Patent Laid-Open No. 2001-316195) discloses a step of melting a raw material in a crucible placed inside a growth tank, The step of introducing an inert gas into the growth tank so that the oxygen concentration in the growth tank is 0.1 volume% or more and 1.2 volume% or less, and by pulling up while rotating the lifting shaft, And a step of growing a single crystal at the end of the substrate (see, for example, claim 6, paragraphs [0051] to [0071] of Patent Document 1)
) o ) o
[0004] また、特許文献 2 (特開平 6— 234597号公報)には、タンタル酸リチウム単結晶の 引き上げ雰囲気を 0. 2〜1. 5容量%の酸素を含む不活性ガス雰囲気とする方法が 開示されている (たとえば、特許文献 2の請求項 5等参照)。 [0004] Patent Document 2 (Japanese Patent Laid-Open No. 6-234597) discloses a method in which a pulling atmosphere of a lithium tantalate single crystal is an inert gas atmosphere containing 0.2 to 1.5% by volume of oxygen. (See, for example, claim 5 of Patent Document 2).
特許文献 1:特開 2001— 316195号公報 Patent Document 1: Japanese Patent Laid-Open No. 2001-316195
特許文献 2:特開平 6 - 234597号公報 Patent Document 2: JP-A-6-234597
発明の開示 Disclosure of the invention
発明が解決しょうとする課題 Problems to be solved by the invention
[0005] し力しながら、特許文献 1および特許文献 2に開示されている方法によってタンタル 酸リチウム単結晶を製造した場合には、タンタル酸リチウム単結晶が黄色に着色する という問題があった。 However, when a lithium tantalate single crystal is produced by the method disclosed in Patent Document 1 and Patent Document 2, there is a problem that the lithium tantalate single crystal is colored yellow.
[0006] 黄色に着色したタンタル酸リチウム単結晶を表面弾性波フィルタの用途に用いる場 合には特に問題とはならないが、黄色の着色は短波長の青色の可視光の透過率が 低減していることを意味しているため、タンタル酸リチウム単結晶を光学素子などの光 学用途に用いる場合には、その透過率の低減が問題となることがあった。 [0006] When a yellow-colored lithium tantalate single crystal is used for a surface acoustic wave filter, However, yellow coloring means that the transmittance of visible light of blue with a short wavelength is reduced, so lithium tantalate single crystals are used for optical applications such as optical elements. In the case of using for the above, the reduction of the transmittance may be a problem.
[0007] そこで、本発明の目的は、黄色の着色を抑えて可視光の透過率を向上することが できるタンタル酸リチウム単結晶の製造方法を提供することにある。 [0007] Accordingly, an object of the present invention is to provide a method for producing a lithium tantalate single crystal capable of improving visible light transmittance by suppressing yellow coloring.
課題を解決するための手段 Means for solving the problem
[0008] 本発明は、不活性ガスを主成分として含むとともに酸素を 0. 04体積%以上 0. 08 体積%以下含む第 1雰囲気ガス中において原料融液カゝら育成結晶を形成する工程 と、不活性ガスを主成分として含み、酸素濃度が 0. 01体積%以下の第 2雰囲気ガス 中において育成結晶を冷却する工程と、冷却後の育成結晶をキュリー温度以上に加 熱する工程と、加熱後の育成結晶に電流を流しながら育成結晶を冷却する工程と、 を含み、育成結晶における(酸化リチウムのモル数) Z (酸化リチウムのモル数 +酸ィ匕 タンタルのモル数)が 0. 49以上 0. 50以下であるタンタル酸リチウム単結晶の製造 方法である。 [0008] The present invention includes a step of forming a grown crystal from a raw material melt in a first atmosphere gas containing an inert gas as a main component and oxygen in an amount of 0.04% by volume or more and 0.08% by volume or less. Cooling the grown crystal in a second atmosphere gas containing an inert gas as a main component and having an oxygen concentration of 0.01% by volume or less; and heating the grown crystal after cooling to a Curie temperature or higher; A step of cooling the grown crystal while passing an electric current through the grown crystal after heating, and (the number of moles of lithium oxide) Z (number of moles of lithium oxide + number of moles of tantalum oxide) in the grown crystal is 0. This is a method for producing a lithium tantalate single crystal of 49 or more and 0.50 or less.
[0009] ここで、本発明において「主成分」とは、ガス全体の 50体積%以上を占めることをい う。すなわち、本発明においては、第 1雰囲気ガスの 50体積%以上が不活性ガスで 構成されており、第 2雰囲気ガスの 50体積%以上が不活性ガスで構成されている。 また、本発明において、第 2雰囲気ガスの酸素濃度は 0体積%であってもよい。 [0009] Here, in the present invention, the "main component" means 50% by volume or more of the entire gas. That is, in the present invention, 50% by volume or more of the first atmosphere gas is composed of an inert gas, and 50% by volume or more of the second atmosphere gas is composed of an inert gas. In the present invention, the oxygen concentration of the second atmospheric gas may be 0% by volume.
[0010] また、本発明のタンタル酸リチウム単結晶の製造方法において、原料融液は、酸ィ匕 マグネシウムが 1モル%以上 5モル%以下添加されて作製されたものであることが好 ましい。 [0010] In the method for producing a lithium tantalate single crystal of the present invention, the raw material melt is preferably prepared by adding 1 mol% or more and 5 mol% or less of magnesium oxide. .
[0011] また、本発明のタンタル酸リチウム単結晶の製造方法において、原料融液は、酸ィ匕 スカンジウムが 0. 1モル%以上 1モル%以下添加されて作製されたものであることが 好ましい。 [0011] In the method for producing a lithium tantalate single crystal of the present invention, the raw material melt is preferably prepared by adding 0.1 mol% or more and 1 mol% or less of scandium oxide. .
[0012] また、本発明のタンタル酸リチウム単結晶の製造方法において、原料融液は、酸ィ匕 亜鉛が 0. 5モル%以上 3モル%以下添加されて作製されたものであることが好まし ヽ [0012] In the method for producing a lithium tantalate single crystal of the present invention, the raw material melt is preferably prepared by adding 0.5 to 3 mol% of zinc oxide.ヽ
[0013] また、本発明のタンタル酸リチウム単結晶の製造方法において、原料融液は、酸ィ匕 スカンジウムが 0. 1モル%以上 1モル%以下添加されるとともに、酸化亜鉛が 1モル %以上 3モル%以下添加されて作製されたものであることが好ましい。 [0013] Further, in the method for producing a lithium tantalate single crystal of the present invention, the raw material melt is an acid solution. Preferably, scandium is added in an amount of 0.1 mol% to 1 mol% and zinc oxide is added in an amount of 1 mol% to 3 mol%.
発明の効果 The invention's effect
[0014] 本発明によれば、黄色の着色を抑えて可視光の透過率を向上することができるタン タル酸リチウム単結晶の製造方法を提供することができる。 [0014] According to the present invention, it is possible to provide a method for producing a lithium tantalate single crystal capable of suppressing yellow coloring and improving the transmittance of visible light.
図面の簡単な説明 Brief Description of Drawings
[0015] [図 1]本発明のタンタル酸リチウム単結晶の製造方法に用いられる装置の一例の模 式的な構成を示す図である。 FIG. 1 is a diagram showing a schematic configuration of an example of an apparatus used in the method for producing a lithium tantalate single crystal of the present invention.
[図 2]本発明における第 1工程の一例を図解する模式的な断面図である。 FIG. 2 is a schematic cross-sectional view illustrating an example of a first step in the present invention.
[図 3]本発明における第 2工程の一例を図解する模式的な断面図である。 FIG. 3 is a schematic cross-sectional view illustrating an example of a second step in the present invention.
[図 4]本発明における第 3工程の一例および第 4工程の一例をそれぞれ図解する模 式的な断面図である。 FIG. 4 is a schematic cross-sectional view illustrating an example of a third step and an example of a fourth step in the present invention.
符号の説明 Explanation of symbols
[0016] 1 育成装置本体、 2 原料供給装置、 3 ロードセル、 4 真空ポンプ、 5 流量計、 6 マスフローコントローラー、 7 酸素濃度計、 8 酸素ガス供給装置、 9 窒素ガス供 給装置、 10 蓋体、 11 保温炉材、 12 高周波コイル、 13 引き上げ軸、 14 坩堝、 15 原料融液、 16 種結晶、 17 育成結晶、 18 加熱装置、 19, 20 電極。 [0016] 1 Growth device body, 2 Raw material supply device, 3 Load cell, 4 Vacuum pump, 5 Flow meter, 6 Mass flow controller, 7 Oxygen concentration meter, 8 Oxygen gas supply device, 9 Nitrogen gas supply device, 10 Lid 11 Incubation furnace material, 12 High frequency coil, 13 Lifting shaft, 14 Crucible, 15 Raw material melt, 16 seed crystal, 17 Growing crystal, 18 Heating device, 19, 20 Electrode.
発明を実施するための最良の形態 BEST MODE FOR CARRYING OUT THE INVENTION
[0017] 以下、本発明の実施の形態について説明する。なお、本発明の図面において、同 一の参照符号は、同一部分または相当部分を表わすものとする。 Hereinafter, embodiments of the present invention will be described. In the drawings of the present invention, the same reference numerals represent the same or corresponding parts.
[0018] 図 1に、本発明のタンタル酸リチウム単結晶の製造方法に用いられる装置の一例の 模式的な構成を示す。この装置は、原料融液カゝらタンタル酸リチウム単結晶を液相 成長させることにより育成結晶を形成するための育成装置本体 1、原料供給装置 2、 ロードセル 3、真空ポンプ 4、流量計 5、マスフローコントローラー 6、酸素濃度計 7、酸 素ガス供給装置 8および窒素ガス供給装置 9を備えて 、る。 FIG. 1 shows a schematic configuration of an example of an apparatus used in the method for producing a lithium tantalate single crystal of the present invention. This equipment consists of a growth device body 1, raw material supply device 2, load cell 3, vacuum pump 4, flow meter 5, flow crystal growth of raw material melt and lithium tantalate single crystal by liquid phase growth. A mass flow controller 6, an oxygen concentration meter 7, an oxygen gas supply device 8 and a nitrogen gas supply device 9 are provided.
[0019] 育成装置本体 1には、原料供給装置 2、ロードセル 3、真空ポンプ 4および酸素濃 度計 7が取り付けられている。 [0020] また、酸素ガス供給装置 8から供給された酸素および窒素ガス供給装置 9から供給 された不活性ガスとしての窒素はマスフローコントローラー 6によって流量が制御され 、その後、混合される。そして、酸素と窒素の混合ガスは、育成装置本体 1、原料供 給装置 2およびロードセル 3にそれぞれガス配管を通って導入される。 [0019] A raw material supply device 2, a load cell 3, a vacuum pump 4, and an oxygen concentration meter 7 are attached to the growth apparatus main body 1. [0020] Further, oxygen supplied from the oxygen gas supply device 8 and nitrogen as an inert gas supplied from the nitrogen gas supply device 9 are controlled in flow rate by the mass flow controller 6 and then mixed. Then, the mixed gas of oxygen and nitrogen is introduced into the growth apparatus main body 1, the raw material supply apparatus 2 and the load cell 3 through gas pipes, respectively.
[0021] そして、原料供給装置 2およびロードセル 3に導入された混合ガスはそれぞれ育成 装置本体 1に流れ込んで、育成装置本体 1に直接導入された混合ガスと育成装置本 体 1内で合流する。 Then, the mixed gas introduced into the raw material supply device 2 and the load cell 3 flows into the growth apparatus main body 1 and merges with the mixed gas directly introduced into the growth apparatus main body 1 in the growth apparatus main body 1.
[0022] その後、育成装置本体 1内の混合ガスは、育成装置本体 1に設けられた排気口か ら排気管に流れるが、この排気管に取り付けられた酸素濃度計 7によって育成装置 本体 1内の雰囲気ガス中の酸素濃度が計測される。 Thereafter, the mixed gas in the growth apparatus main body 1 flows from the exhaust port provided in the growth apparatus main body 1 to the exhaust pipe. The oxygen concentration meter 7 attached to the exhaust pipe causes the mixed gas in the growth apparatus main body 1 to flow. The oxygen concentration in the atmospheric gas is measured.
[0023] 図 2に、図 1に示す育成装置本体 1の一例の模式的な断面を示す。ここで、育成装 置本体 1においては、保温炉材 11の下部に坩堝 14が設置されており、保温炉材 11 の上部には蓋体 10が設置されている。また、坩堝 14の外部には高周波コイル 12が 設置されており、端部に種結晶 16を備えた引き上げ軸 13は蓋体 10の中心を通して 設置されている。 FIG. 2 shows a schematic cross section of an example of the growing apparatus main body 1 shown in FIG. Here, in the growth apparatus main body 1, the crucible 14 is installed at the lower part of the heat insulation furnace material 11, and the lid body 10 is installed at the upper part of the heat insulation furnace material 11. A high-frequency coil 12 is installed outside the crucible 14, and a pulling shaft 13 having a seed crystal 16 at the end is installed through the center of the lid 10.
[0024] このような構成の育成装置本体 1において、坩堝 14にタンタル酸リチウム単結晶の 原料となる原料融液 15が収容される。そして、引き上げ軸 13に備えられた種結晶 16 を原料融液 15中に浸漬させ、引き上げ軸 13を回転させながら上方に引き上げていく ことにより、種結晶 16の表面上にタンタル酸リチウム単結晶となる育成結晶 17が徐々 に形成される。 In the growth apparatus main body 1 having such a configuration, a raw material melt 15 serving as a raw material of a lithium tantalate single crystal is accommodated in a crucible 14. Then, the seed crystal 16 provided on the pulling shaft 13 is immersed in the raw material melt 15 and pulled upward while rotating the pulling shaft 13, so that the lithium tantalate single crystal is formed on the surface of the seed crystal 16. The grown crystal 17 is gradually formed.
[0025] ここで、本発明においては、不活性ガスを主成分として含むとともに酸素を 0. 04体 積%以上 0. 08体積%以下含む第 1雰囲気ガス中において原料融液から育成結晶 を形成する工程 (第 1工程)が行なわれる。この工程について、たとえば図 2を例に挙 げて説明すると、本発明においては、育成装置本体 1の内部の雰囲気を不活性ガス を主成分として含むとともに酸素を 0. 04体積%以上 0. 08体積%以下含む第 1雰囲 気ガスの雰囲気とし、その第 1雰囲気ガスの雰囲気中で原料融液 15からタンタル酸リ チウム単結晶となる育成結晶 17を形成する。なお、ここでは、育成装置本体 1の内部 の雰囲気の全圧は 1気圧に設定することができる。 [0026] 続いて、本発明においては、酸素濃度が 0. 01体積%以下の第 2雰囲気ガス中に おいて育成結晶を冷却する工程 (第 2工程)が行なわれる。この工程について、たと えば図 3を例に挙げて説明すると、育成装置本体 1の内部の雰囲気が上記の第 1雰 囲気ガスの雰囲気から、すみやかに酸素濃度が 0. 01体積%以下の第 2雰囲気ガス の雰囲気に変更され、その第 2雰囲気ガスの雰囲気中にお 、て育成結晶 17が原料 融液 15から引き離された状態で冷却される。ここでも、育成装置本体 1の内部の雰囲 気の全圧は 1気圧に設定することができる。 [0025] Here, in the present invention, the grown crystal is formed from the raw material melt in the first atmosphere gas containing an inert gas as a main component and oxygen in an amount of 0.04 volume% or more and 0.08 volume% or less. The first step is performed. This process will be described with reference to FIG. 2 as an example. In the present invention, the atmosphere inside the growth apparatus main body 1 contains an inert gas as a main component and oxygen is contained at 0.04 vol% or more. A first atmosphere gas atmosphere containing less than or equal to volume% is formed, and a grown crystal 17 that becomes a lithium tantalate single crystal is formed from the raw material melt 15 in the atmosphere of the first atmosphere gas. Here, the total pressure of the atmosphere inside the growth apparatus main body 1 can be set to 1 atmosphere. [0026] Subsequently, in the present invention, a step (second step) of cooling the grown crystal is performed in the second atmosphere gas having an oxygen concentration of 0.01% by volume or less. This process will be described with reference to FIG. 3, for example. The atmosphere inside the growth apparatus main body 1 is the second atmosphere having an oxygen concentration of 0.01 vol% or less immediately from the atmosphere of the first atmosphere gas. The atmosphere is changed to the atmosphere of the atmosphere gas, and the grown crystal 17 is cooled while being separated from the raw material melt 15 in the atmosphere of the second atmosphere gas. Again, the total pressure of the atmosphere inside the growth apparatus body 1 can be set to 1 atmosphere.
[0027] その後、本発明においては、上記の第 2工程において冷却された育成結晶をその キュリー温度以上に加熱する工程 (第 3工程)が行なわれる。この工程について、たと えば図 4を例に挙げて説明すると、上記冷却後の育成結晶 17は、単分域化処理す るための方向に垂直な表面に設置された電極 19および電極 20で挟み込まれ、たと えば抵抗加熱装置などの加熱装置 18内に設置される。そして、加熱装置 18におい て、育成結晶 17をキュリー温度以上に加熱した後、電極 19および電極 20を通じて 単分域化処理するための方向に育成結晶 17に電流を流す。 [0027] Thereafter, in the present invention, a step (third step) of heating the grown crystal cooled in the second step above the Curie temperature is performed. For example, FIG. 4 is used to explain this process. The grown crystal 17 after cooling is sandwiched between the electrodes 19 and 20 placed on the surface perpendicular to the direction for the single domain treatment. For example, it is installed in a heating device 18 such as a resistance heating device. Then, after the grown crystal 17 is heated to the Curie temperature or higher in the heating device 18, an electric current is passed through the grown crystal 17 in the direction for performing the single domain treatment through the electrodes 19 and 20.
[0028] ここで、キュリー温度とは、強誘電体から常誘電体に転移する温度のことをいう。たと えば、タンタル酸リチウム単結晶のキュリー温度は、タンタル酸リチウム単結晶を構成 するリチウムとタンタルとのモル比によって変化する力 一般的には、 600°C〜700°C の範囲内のいずれかの温度となる。 [0028] Here, the Curie temperature refers to a temperature at which a ferroelectric material transitions to a paraelectric material. For example, the Curie temperature of a lithium tantalate single crystal is a force that varies depending on the molar ratio of lithium and tantalum that make up the lithium tantalate single crystal. Generally, the temperature is either 600 ° C to 700 ° C. Temperature.
[0029] 続いて、本発明においては、上記の第 3工程において加熱された育成結晶に電流 を流しながら育成結晶を冷却する工程 (第 4工程)が行なわれる。この工程について、 たとえば図 4を例に挙げて説明すると、キュリー温度以上に加熱された育成結晶 17 に電極 19および電極 20を通じて単分域ィ匕処理するための方向に電流を流しながら 育成結晶 17を冷却する。 [0029] Subsequently, in the present invention, a step (fourth step) is performed in which the grown crystal is cooled while an electric current is applied to the grown crystal heated in the third step. This process will be described with reference to FIG. 4, for example. The growth crystal 17 heated to a temperature above the Curie temperature is passed through the electrodes 19 and 20 while passing a current in the direction for single domain treatment. Cool down.
[0030] ここで、タンタル酸リチウム単結晶が黄色に着色するのを低減させる観点からは、育 成結晶 17には、 0. 05mAZcm2以下の直流電流を流すことが好ましい。また、育成 結晶 17に流される直流電流の電流密度の下限は、たとえば 0. OlmAZcm2以上と することができる。 Here, from the viewpoint of reducing the yellow coloration of the lithium tantalate single crystal, it is preferable to pass a direct current of 0.05 mAZcm 2 or less to the grown crystal 17. Further, the lower limit of the current density of the direct current flowing through the grown crystal 17 can be set to, for example, 0. OlmAZcm 2 or more.
[0031] また、タンタル酸リチウム単結晶が黄色に着色するのを低減させる観点からは、育 成結晶 17は、直流電流を流されながら 50°CZh以下の冷却速度で冷却されることが 好ましい。なお、本明細書において、 50°CZh以下の冷却速度とは、 1時間当たりに 温度が 50°C低下する速度のことを意味する。 [0031] From the viewpoint of reducing the yellow coloration of the lithium tantalate single crystal, the growth The formed crystal 17 is preferably cooled at a cooling rate of 50 ° C. Zh or less while a direct current is passed. In the present specification, the cooling rate of 50 ° CZh or lower means the rate at which the temperature decreases by 50 ° C per hour.
[0032] そして、上記の第 1工程〜第 4工程を経て得られた育成結晶により、黄色の着色が 抑えられて可視光の透過率が向上したタンタル酸リチウム単結晶を得ることができる [0032] With the grown crystal obtained through the first to fourth steps, it is possible to obtain a lithium tantalate single crystal in which yellow coloring is suppressed and visible light transmittance is improved.
[0033] 上記の第 1工程〜第 4工程を含む本発明のタンタル酸リチウム単結晶の製造方法 は以下の観点から本発明者によって見いだされた。 [0033] The method for producing a lithium tantalate single crystal of the present invention including the first to fourth steps described above has been found by the present inventors from the following viewpoints.
[0034] 特許文献 1に記載のものも含め、一般にタンタル酸リチウム単結晶の組成は、一致 溶融組成である。これは定比組成ではない。すなわち、育成結晶における(酸化リチ ゥムのモル数) Z (酸化リチウムのモル数 +酸化タンタルのモル数)が 0. 485付近とリ チウムイオンが少なぐタンタルイオンが多い構成となっている。つまり、タンタル酸リ チウム単結晶の結晶構造中、リチウムイオンが占めるべきサイトの一部をタンタルィォ ンが代わりに占有している。その結果、電荷を補償するために空位が生じている。こ の空位が、光吸収の原因となっていると考えられる。 [0034] In general, the composition of the lithium tantalate single crystal, including the one described in Patent Document 1, is a congruent melt composition. This is not a stoichiometric composition. In other words, the growth crystal (number of moles of lithium oxide) Z (number of moles of lithium oxide + number of moles of tantalum oxide) is around 0.485, and there are many tantalum ions with fewer lithium ions. In other words, in the crystal structure of the lithium tantalate single crystal, tantalum ion occupies part of the site that should be occupied by lithium ions. As a result, vacancies are generated to compensate for the charges. This vacancy is considered to cause light absorption.
[0035] 我々は、タンタル酸リチウム単結晶の製造において一般に用いられる一致溶融組 成よりもリチウムが過剰な組成域、すなわち育成結晶における(酸化リチウムのモル数 )Z (酸化リチウムのモル数 +酸化タンタルのモル数)が 0. 49以上 0. 50以下の非一 致溶融組成域とすることにより、この問題点を改善する可能性を見出した。 [0035] We have a composition range in which lithium is in excess of the coincident melting composition generally used in the production of lithium tantalate single crystals, ie, (number of moles of lithium oxide) Z (number of moles of lithium oxide + oxidation in the grown crystal) We found the possibility of improving this problem by setting the non-matching melting composition range (mol of tantalum) to 0.49 or more and 0.50 or less.
[0036] しかし、さらに問題点として高い透過率 (黄色着色がないこと)の再現性が得られな いことがわ力つた。この原因を調査したところ、酸素濃度が 0. 1体積%以上の従来の 雰囲気ガス中でタンタル酸リチウム単結晶を育成した場合には、 Li Oや LiOなどのリ [0036] However, as a further problem, it was proved that the reproducibility of high transmittance (no yellowing) was not obtained. As a result of investigating the cause, when a lithium tantalate single crystal was grown in a conventional atmospheric gas with an oxygen concentration of 0.1% by volume or more, LiO, LiO,
2 2
チウム酸化物の蒸気が特に多く飛散する傾向にあることも確認された。 It was also confirmed that a particularly large amount of the vapor of thium oxide tends to scatter.
[0037] そこで、本発明者が鋭意検討した結果、不活性ガスを主成分として含むとともに酸 素を 0. 04体積%以上 0. 08体積%以下含む第 1雰囲気ガス中において原料融液 力 (酸化リチウムのモル数) Z (酸化リチウムのモル数 +酸化タンタルのモル数)が 0 . 49以上 0. 50以下の育成結晶を液相成長させる(第 1工程)ことにより、原料融液か ら Li Oや LiOなどのリチウム酸ィ匕物の蒸気の飛散を抑制でき、さらに、上記の第 1ェ 程に引き続いて上記の第 2工程〜第 4工程をこの順序で行なうことにより、タンタル酸 リチウム単結晶が黄色に着色しにくくなり、可視光の透過率を向上することができるこ とを見出し、本発明を完成させた。 [0037] Therefore, as a result of intensive studies by the inventor, the raw material melt force in the first atmosphere gas containing the inert gas as a main component and oxygen in the range of 0.04% by volume to 0.08% by volume. The number of moles of lithium oxide) Z (number of moles of lithium oxide + number of moles of tantalum oxide) is grown from the raw material melt by liquid phase growth of grown crystals with a ratio of 0.49 to 0.50 (first step). Lithium oxide such as Li 2 O and LiO can be prevented from splashing vapor, and the above first Subsequently, the second to fourth steps described above were performed in this order, so that the lithium tantalate single crystal was less likely to be colored yellow, and the visible light transmittance could be improved. The present invention has been completed.
[0038] さらに、本発明者は、マグネシウムイオン、亜鉛イオンあるいはスカンジウムイオンの ような異種イオンを添加物として導入した場合には、タンタル酸リチウム単結晶中に お!、てこれらのイオンがリチウムイオンが占めるべきサイトを占有して!/、るタンタルィォ ンと入れ替わり、その結果として光吸収の原因となる空位が減少して、可視光の透過 率が向上することも見出した。 [0038] Furthermore, the present inventor, when introducing a different ion such as magnesium ion, zinc ion or scandium ion as an additive, these ions are incorporated into the lithium tantalate single crystal. We also found that tantalum ion occupies the site that should occupy! /, And as a result, the vacancies causing light absorption are reduced, and the transmittance of visible light is improved.
[0039] なお、本発明にお 、て、原料融液としてはタンタル酸リチウム単結晶を製造できるも のであれば特に限定されず用いることができる力 なかでも、タンタル酸リチウム単結 晶が黄色に着色するのを低減させる観点からは、原料融液としては、酸化リチウム (L [0039] In the present invention, the raw material melt is not particularly limited as long as it can produce a lithium tantalate single crystal, and the lithium tantalate single crystal is yellow even if it can be used. From the viewpoint of reducing coloring, the raw material melt may be lithium oxide (L
1 O)と酸ィ匕タンタル (Ta O )とを含む原料融液を用いることが好ましい。 It is preferable to use a raw material melt containing 1 O) and tantalum oxide (Ta 2 O 3).
2 2 5 2 2 5
[0040] また、原料融液としては、酸化マグネシウム(MgO)が 1モル%以上 5モル%以下添 カロされて作製されることがより好ましい。この場合には、タンタル酸リチウム単結晶が 黄色に着色するのをさらに低減することができる傾向にある。 [0040] The raw material melt is more preferably prepared by adding 1 mol% or more and 5 mol% or less of magnesium oxide (MgO). In this case, it tends to be possible to further reduce the yellow coloration of the lithium tantalate single crystal.
[0041] ここで、 MgOが 1モル%以上 5モル%以下添加されるとは、以下の式(1)を満たす ように MgOが添カ卩されることを!、う。 [0041] Here, when MgO is added in an amount of 1 mol% or more and 5 mol% or less, MgO is added so as to satisfy the following formula (1).
1≤ 100 X (添加される MgOのモル数) / (原料融液の溶融前の混合物全体(添加さ れる MgOを含む)のモル数)≤ 5 1≤ 100 X (Mole number of MgO added) / (Mole number of the whole mixture (including MgO added) before melting of raw material melt) ≤ 5
また、原料融液としては、酸化スカンジウム(Sc O )が 0. 1モル%以上 1モル%以 In addition, as a raw material melt, scandium oxide (Sc 2 O 3) is 0.1 mol% or more and 1 mol% or less.
2 3 twenty three
下添加されて作製されることがより好ましい。この場合にも、タンタル酸リチウム単結晶 が黄色に着色するのをさらに低減することができる傾向にある。 More preferably, it is prepared by adding it underneath. Also in this case, it tends to be possible to further reduce the yellow coloration of the lithium tantalate single crystal.
[0042] ここで、 Sc Oが 0. 1モル%以上 1モル%以下添加されるとは、以下の式(2)を満た Here, the addition of 0.1 mol% or more and 1 mol% or less of Sc 2 O satisfies the following formula (2).
2 3 twenty three
すように Sc Oが添加されることをいう。 This means that ScO is added.
2 3 twenty three
0. 1≤ 100 X (添加される Sc oのモル数) / (原料融液の溶融前の混合物全体(添 0. 1≤ 100 X (number of moles of Sc added) / (total mixture before melting of raw material melt (added)
2 3 twenty three
カロされる Sc Oを含む)のモル数)≤1 · '· (2) The number of moles of Sc (including Sc O)) ≤ 1 · '· (2)
2 3 twenty three
また、原料融液としては、酸化亜鉛 (ΖηΟ)が 0. 5モル%以上 3モル%以下添加さ れて作製されることがより好ましい。この場合にも、タンタル酸リチウム単結晶が黄色 に着色するのをさらに低減することができる傾向にある。 The raw material melt is more preferably prepared by adding 0.5 to 3 mol% of zinc oxide (ΖηΟ). Also in this case, the lithium tantalate single crystal is yellow It tends to be possible to further reduce the coloring.
[0043] ここで、 ZnO力 . 5モル%以上 3モル%以下添加されるとは、以下の式(3)を満た すように ZnOが添加されることを!、う。 [0043] Here, ZnO force of 0.5 mol% or more and 3 mol% or less added means that ZnO is added so as to satisfy the following formula (3)!
0. 5≤ 100 X (添加される ZnOのモル数) / (原料融液の溶融前の混合物全体(添 カロされる ZnOを含む)のモル数)≤ 3 - -- (3) 0. 5≤ 100 X (number of moles of ZnO added) / (number of moles of the entire mixture (including ZnO to be added) before melting) ≤ 3--(3)
また、原料融液としては、 Sc Oが 0. 1モル%以上 1モル%以下添加されるとともに In addition, as a raw material melt, ScO is added in an amount of 0.1 mol% to 1 mol%.
2 3 twenty three
、 ZnOが 1モル%以上 3モル%以下添加されて作製されることがより好ましい。この場 合にも、タンタル酸リチウム単結晶が黄色に着色するのをさらに低減することができる 傾向にある。 More preferably, ZnO is added at 1 mol% or more and 3 mol% or less. Also in this case, it tends to be possible to further reduce the yellow coloration of the lithium tantalate single crystal.
[0044] ここで、 Sc Oが 0. 1モル0 /0以上 1モル0 /0以下添加されるとともに、 ZnOが 1モル0 /0 [0044] Here, with Sc O is added 0.1 mole 0/0 or 1 mole 0/0 or less, ZnO is 1 mole 0/0
2 3 twenty three
以上 3モル%以下添加されるとは、以下の式 (4)を満たすように Sc Oが添加されると More than 3 mol% is added when ScO is added to satisfy the following formula (4).
2 3 twenty three
ともに、以下の式(5)を満たすように ZnOが添加されることを 、う。 In both cases, ZnO is added so as to satisfy the following formula (5).
0. 1≤ 100 X (添加される Sc Oのモル数) / (原料融液の溶融前の混合物全体(添 0. 1≤ 100 X (number of moles of ScO added) / (total mixture before melting of raw material melt (added)
2 3 twenty three
カロされる Sc Oおよび ZnOを含む)のモル数)≤ 1 · · · (4) Number of moles (including ScO and ZnO)) ≤ 1 · · · (4)
2 3 twenty three
1≤ 100 X (添加される ZnOのモル数) / (原料融液の溶融前の混合物全体(添加さ れる Sc Oおよび ZnOを含む)のモル数)≤ 3 · · · (5) 1≤ 100 X (number of moles of ZnO added) / (number of moles of the entire mixture (including ScO and ZnO added) before melting of the raw material melt) ≤ 3 (5)
2 3 twenty three
また、上記においては、主にチヨクラルスキー(CZ)法を用いてタンタル酸リチウム 単結晶を育成する場合について説明した力 本発明においては CZ法以外にも、連 続原料供給式の二重坩堝法、溶液法 (Top- Seeded Solution Growth法)またはブリツ ジマン法などの育成法も用いることができる。 Further, in the above description, the force described in the case of growing a lithium tantalate single crystal mainly using the Tyoklalsky (CZ) method. In the present invention, in addition to the CZ method, a continuous raw material supply type double crucible is used. A growth method such as a method, a solution method (Top-Seeded Solution Growth method) or a Bridgeman method can also be used.
[0045] また、上記においては、第 1雰囲気ガスおよび第 2雰囲気ガスの主成分となる不活 性ガスとして窒素を用いた場合について説明した力 本発明においては、窒素以外 にもアルゴンなどの希ガスも不活性ガスとして用いることができる。 実施例 [0045] Further, in the above description, the force described for the case where nitrogen is used as the inert gas that is the main component of the first atmosphere gas and the second atmosphere gas. In the present invention, in addition to nitrogen, a rare gas such as argon is used. Gas can also be used as an inert gas. Example
[0046] 表 1および表 2に示す構成の原料融液力 試料番号 1〜34の育成結晶を CZ法に より育成し、試料番号 1〜34の育成結晶のそれぞれについて育成結晶の結晶成長 時の状態、可視光 (青色)に対する内部透過率および結晶の着色について評価した 。具体的には、以下のようにして育成結晶の形成および評価を行なった。 [0047] まず、炭酸リチウム(Li CO )と酸化タンタル (Ta O )のモル比が Li CO : Ta O = [0046] Raw material melt force having the structure shown in Table 1 and Table 2 Grown crystals of sample numbers 1 to 34 were grown by the CZ method, and each of the grown crystals of sample numbers 1 to 34 was grown at the time of crystal growth of the grown crystals. The state, internal transmittance for visible light (blue) and crystal coloration were evaluated. Specifically, the growth crystal was formed and evaluated as follows. First, the molar ratio of lithium carbonate (Li 2 CO 3) to tantalum oxide (Ta 2 O 3) is Li CO: Ta 2 O =
2 3 2 5 2 3 2 5 2 3 2 5 2 3 2 5
57 :43となるように Li COを 70. 8g秤量し、 Ta Oを 319. 2g秤量した。これらをポッ 57:43 Weighed 70.8 g of Li 2 CO and weighed 39.2 g of Ta 2 O. Pop these
2 3 2 5 2 3 2 5
トに入れ、吸湿に注意しながら 1時間攪拌混合を行なった。そして、 1300°Cで 8時間 加熱して仮焼した。 The mixture was stirred and mixed for 1 hour while paying attention to moisture absorption. Then, it was calcined by heating at 1300 ° C for 8 hours.
[0048] 次に、仮焼物を吸湿に注意しながらイリジウム製の坩堝に入れ、これを加熱しながら 1時間均質化して原料融液を作製し、この原料融液を用いて CZ法によりタンタル酸リ チウム単結晶を育成して、 (Li Oのモル数) [0048] Next, the calcined product is placed in an iridium crucible while paying attention to moisture absorption, and is homogenized for 1 hour while being heated to prepare a raw material melt. Using this raw material melt, tantalum acid is obtained by the CZ method. Growing lithium single crystal (number of moles of Li 2 O)
2 Z (Li Oのモル数 +Ta Oのモル数)が 0 2 Z (number of moles of Li 2 O + number of moles of Ta 2 O) is 0
2 2 5 2 2 5
. 497となる育成結晶を形成した (試料番号 11〜15)。 A grown crystal to be 497 was formed (Sample Nos. 11 to 15).
[0049] また、上記と同様にして、(Li Oのモル数) モル数 +Ta Oのモル数)が [0049] In the same manner as described above, (number of moles of Li 2 O) number of moles + number of moles of Ta 2 O)
2 Z (Li Oの 2 Z (Li O
2 2 5 2 2 5
0. 490 (試料番号1〜5)、0. 493 (試料番号 6〜: L0)、 0. 500 (試料番号 16〜20) となる育成結晶をそれぞれ形成した。 Growing crystals were formed to become 0.490 (sample numbers 1 to 5), 0.493 (sample numbers 6 to: L0), and 0.500 (sample numbers 16 to 20), respectively.
[0050] また、 Li COと Ta Oのモル比が Li CO : Ta O = 55 :45となるように Li COを 66 [0050] Further, the Li CO is adjusted so that the molar ratio of Li CO to Ta O is Li CO: Ta O = 55:45.
2 3 2 5 2 3 2 5 2 3 2 3 2 5 2 3 2 5 2 3
. 2g、 Ta Oを 323. 8g样量してポッ Mこ人れ、さらに、 MgOの添カロ量力 1モノレ0 /0、 3 . 2g, pop M this person is to 323. 8g样量the Ta O, further, added Caro amount force of MgO 1 Monore 0/0, 3
2 5 twenty five
. 7モノレ0 /0、 5モノレ0 /0となるように、 MgOをそれぞれ 0. 66g、 2. 74g、 3. 45gをその ポットに添加した。そして、これを仮焼した後に均質ィ匕して原料融液を作製し、この原 料融液を用いて CZ法によりタンタル酸リチウム単結晶を育成して、(Li Oのモル数) . 7 Monore 0/0, 5 Monore 0/0 become manner, 0. MgO respectively 66 g, 2. 74 g, was added 3. 45 g to the pot. After calcining this, it is homogenized to produce a raw material melt, and using this raw material melt, a lithium tantalate single crystal is grown by the CZ method (number of moles of Li 2 O).
2 2
/ (Li Oのモル数 +Ta Oのモル数)が 0. 495となる育成結晶を形成した (試料番 / Grown crystals with (number of moles of Li O + number of moles of Ta O) being 0.495 (sample number
2 2 5 2 2 5
号 21〜23)。 No. 21-23).
[0051] また、 Li COと Ta Oのモル比が Li CO : Ta O = 55 :45となるように Li COを 66 [0051] Further, Li CO is adjusted so that the molar ratio of Li CO to Ta O is Li CO: Ta O = 55:45.
2 3 2 5 2 3 2 5 2 3 2 3 2 5 2 3 2 5 2 3
. 2g、 Ta Oを 323. 8g秤量してポットに入れ、さらに、 Sc Oの添カロ量力0. 1モノレ0 /0 . 2 g, placed in a pot and 323. 8 g weighed Ta O, further, Sc O of added Caro weight force 0.1 Monore 0/0
2 5 2 3 2 5 2 3
、 0. 35モノレ0 /0となるように、 Sc Oをそれぞれ 0. 23g、 0. 79gをそのポットに添カロし , So that 0.35 Monore 0/0, respectively 0. 23 g of Sc O, then added Caro a 0. 79 g to the pot
2 3 twenty three
た。そして、これを仮焼した後に均質ィ匕して原料融液を作製し、この原料融液を用い て CZ法によりタンタル酸リチウム単結晶を育成して、(Li Oのモル数) It was. Then, after calcining this, homogenized to produce a raw material melt, and using this raw material melt, a lithium tantalate single crystal was grown by the CZ method (number of moles of Li 2 O)
2 Z (Li Oのモ 2 Z (Li O
2 ル数 +Ta Oのモル数)が 0. 495となる育成結晶を形成した (試料番号 24〜25)。 A grown crystal having a number of 2 + the number of moles of TaO was 0.495 (sample numbers 24 to 25).
2 5 twenty five
[0052] また、 Li COと Ta Oのモル比が Li CO : Ta O = 57 :43となるように Li COを 70 [0052] In addition, Li CO is adjusted so that the molar ratio of Li CO to Ta O is Li CO: Ta O = 57:43.
2 3 2 5 2 3 2 5 2 3 2 3 2 5 2 3 2 5 2 3
• 8g、 Ta Oを 319· 2g样量してポットに入れ、さらに、 Sc Oの添カロ量カ 0· 5モノレ0 /0 • 8g, put in a pot with 319 · 2g样量the Ta O, further, added Caro amount mosquito Sc O 0 · 5 Monore 0/0
2 5 2 3 2 5 2 3
、 1モノレ0 /0となるように、 Sc Oをそれぞれ 1· 16g、 2. 34gをそのポットに添カロした。 , 1 Monore 0/0 become so were added Caro Sc O each 1 · 16g, 2. 34g to its pot.
2 3 twenty three
そして、これを仮焼した後に均質ィ匕して原料融液を作製し、この原料融液を用いて C Z法によりタンタル酸リチウム単結晶を育成して、(Li Oのモル数) Z (Li Oのモル数 After calcining this, it is homogenized to produce a raw material melt, and using this raw material melt, C Growing lithium tantalate single crystal by Z method, (number of moles of Li 2 O) Z (number of moles of Li 2 O
2 2 twenty two
+Ta Oのモル数)が 0. 497となる育成結晶を形成した (試料番号 26〜27)。 A grown crystal having a + Ta 2 O mole number of 0.497 was formed (Sample Nos. 26 to 27).
2 5 twenty five
[0053] また、 Li COと Ta Oのモル比が Li CO: Ta O = 57 :43となるように Li COを 70 [0053] Further, Li CO is adjusted so that the molar ratio of Li CO to Ta O is Li CO: Ta O = 57:43.
2 3 2 5 2 3 2 5 2 3 2 3 2 5 2 3 2 5 2 3
. 8g、 Ta Oを 319. 2g样量してポットに人れ、さらに、 ZnOの添カロ量力 0. 5モノレ0 /0、 . 8 g, human being in the pot and 319. 2 g样量a Ta O, further, added Caro amount force of ZnO 0. 5 Monore 0/0,
2 5 twenty five
1モノレ0 /0、 3モノレ0 /0となるように、 ZnOをそれぞれ 0. 69g、 1. 38g、 4. 23gをそのポッ トに添加した。そして、これを仮焼した後に均質ィ匕して原料融液を作製し、この原料 融液を用いて CZ法によりタンタル酸リチウム単結晶を育成して、(Li Oのモル数) Z ( 1 Monore 0/0, 3 Monore 0/0 become manner, 0. ZnO respectively 69 g, 1. 38 g, was added to 4. 23 g on the pots. Then, after calcining this, it is homogenized to prepare a raw material melt, and using this raw material melt, a lithium tantalate single crystal is grown by the CZ method, and the (number of moles of Li 2 O) Z (
2 2
Li Oのモル数 +Ta Oのモル数)が 0. 497となる育成結晶を形成した (試料番号 28 A grown crystal was formed in which the number of moles of Li 2 O + the number of moles of Ta 2 O was 0.497 (Sample No. 28
2 2 5 2 2 5
〜30)。 ~ 30).
[0054] また、 Li COと Ta Oのモル比が Li CO: Ta O = 57 :43となるように Li COを 70 [0054] In addition, Li CO is adjusted so that the molar ratio of Li CO to Ta O is Li CO: Ta O = 57:43.
2 3 2 5 2 3 2 5 2 3 2 3 2 5 2 3 2 5 2 3
. 8g、 Ta Oを 319. 2g样量してポットに人れ、さらに、 Sc Oの添カロ量力0. 25モノレ 8g, 319. 2g sample of Ta O and put it in the pot.
2 5 2 3 2 5 2 3
%、 0. 5モノレ0 /0、 0. 5モノレ0 /0、 1モノレ0 /0となるように、 Sc Oをそれぞれ 0. 58g、 1. 1 %, 0.5 Monore 0/0, 0.5 Monore 0/0, 1 Monore 0/0 so that, respectively 0. 58 g of Sc O, 1. 1
2 3 twenty three
6g、 1. 16g、 2. 34gをそのポットに添カロし、 ZnOの添カロ量力 モノレ0 /0、 1モノレ0 /0、 2 モノレ0 /0、 1モノレ0 /0となるように、 ZnOをそれぞれ 1. 38g、 1. 38g、 2. 79g、 1. 38gを そのポットに添加した。そして、これを仮焼した後に均質ィ匕して原料融液を作製し、こ の原料融液を用いて CZ法によりタンタル酸リチウム単結晶を育成して、(Li Oのモル 6 g, 1. 16g, 2. 34g and added Caro its pot, added Caro amount force of ZnO Monore 0/0, 1 Monore 0/0, 2 Monore 0/0, 1 Monore 0/0 so as to, ZnO 1.38 g, 1.38 g, 2.79 g and 1.38 g, respectively, were added to the pot. After calcining this, it is homogenized to produce a raw material melt, and using this raw material melt, a lithium tantalate single crystal is grown by the CZ method, and the (Li 2 O mol) is grown.
2 数) Z (Li Oのモル数 +Ta Oのモル数)が 0. 497となる育成結晶を形成した (試料 2) Growing crystals with Z (number of moles of Li 2 O + number of moles of Ta 2 O) of 0.497 were formed (sample
2 2 5 2 2 5
番号 31〜34)。 Numbers 31-34).
[0055] ここで、試料番号 1〜34の育成結晶の形成条件は、結晶育成方向が Z軸方向、引 き上げ軸の回転速度が 6rpm、弓 Iき上げ軸の弓 |き上げ速度が ImmZhで一定とされ た。この条件で、直径が約 25mmで、厚さが約 20mmである試料番号 1〜34の育成 結晶を引き上げ軸の端部に設置された種結晶上に形成した。 [0055] Here, the growth conditions of the growth crystals of sample numbers 1 to 34 are as follows: crystal growth direction is Z-axis direction, pull-up shaft rotation speed is 6rpm, bow I lift-up shaft bow | At a constant. Under these conditions, the grown crystals of Sample Nos. 1 to 34 having a diameter of about 25 mm and a thickness of about 20 mm were formed on the seed crystal installed at the end of the pulling shaft.
[0056] また、試料番号 1〜34の育成結晶の形成時の第 1雰囲気ガスとしては酸素濃度が 0. 03体積0 /0、 0. 04体積0 /0、 0. 06体積0 /0、 0. 08体積0 /0または 0. 1体積0 /0である 酸素を含む窒素が用いられた。なお、酸素濃度 (体積%)は、試料番号 1〜34の育 成結晶の形成に用いられた育成装置本体の排気管に取り付けられた酸素濃度計( 東レエンジニアリング製 ジルコユア式酸素濃度計 (LC— 700) )によって計測された 。育成結晶の形成時の第 1雰囲気ガスの全圧は 1気圧に設定された。 [0057] なお、上記組成は一致溶融組成ではな 、ため、組成ずれの影響が出な 、原料融 液の 10質量%で試料番号 1〜34の育成結晶の形成が行なわれた。なお、原料融液 の 10質量%以下であれば、組成ずれを補正するための原料供給は不要であるが、 原料融液の 10質量%を超える場合には、組成ずれを補正するためにたとえば図 1に 示す原料供給装置 2等から原料を供給する必要がある。 [0056] In addition, the oxygen concentration is 0.03 vol 0/0 as the first atmosphere gas at the time of forming the grown crystal of Sample No. 1-34, 0.04 volume 0/0, 0.06 volume 0/0, 0.08 volume 0/0 or 0. nitrogen containing oxygen is 1 volume 0/0 was used. The oxygen concentration (% by volume) was measured using an oxygen concentration meter (LC--Oxygen concentration meter (LC—) manufactured by Toray Engineering Co., Ltd. 700) measured by). The total pressure of the first atmosphere gas during the growth of the growth crystal was set to 1 atmosphere. [0057] It should be noted that the above composition is not a coincidence melt composition, and therefore, growth crystals of sample numbers 1 to 34 were formed at 10% by mass of the raw material melt without the influence of compositional deviation. If the raw material melt is 10% by mass or less, it is not necessary to supply the raw material for correcting the composition deviation. However, if it exceeds 10% by mass of the raw material melt, in order to correct the composition deviation, for example, It is necessary to supply the raw material from the raw material supply device 2 shown in FIG.
[0058] 次に、育成結晶の形成後においては、育成結晶を原料融液からそれぞれ引き離し 、酸素供給装置力 酸素を供給するのを停止して、窒素のみを育成装置本体に導入 した。そして、上記の酸素濃度計が 0. 01体積%を示した時点から育成結晶の冷却 を開始 (すなわち、酸素濃度が 0. 01体積%以下の酸素と酸素以外の残部が窒素か らなる第 2雰囲気ガス中で冷却)した。この操作を試料番号 1〜34の育成結晶のそれ ぞれについて行なった。なお、酸素の供給を停止して力も酸素濃度計が 0. 01体積 %を示した時点までの時間は 5時間以内であった。なお、育成結晶の冷却時の第 2 雰囲気ガスの全圧は 1気圧に設定された。 [0058] Next, after the growth crystal was formed, the growth crystal was separated from the raw material melt, the supply of oxygen to the oxygen supply device was stopped, and only nitrogen was introduced into the growth device main body. Then, cooling of the grown crystal starts when the above oxygen concentration meter shows 0.01 volume% (that is, the second oxygen concentration is not more than 0.01 volume% and the remainder other than oxygen is nitrogen. (Cooled in atmospheric gas). This operation was performed for each of the grown crystals of sample numbers 1 to 34. The time from when the supply of oxygen was stopped until the oxygen concentration meter showed 0.01% by volume was within 5 hours. The total pressure of the second atmosphere gas during cooling of the grown crystal was set to 1 atmosphere.
[0059] 上記の冷却後、試料番号 1〜34の育成結晶はそれぞれ黒色化した。そして、黒色 化した試料番号 1〜34の育成結晶をそれぞれ Z軸方向に対向するように Pt板で挟ん だ状態で抵抗加熱炉内に設置した。その後、これらを大気中で 750°Cに加熱し、そ の温度で十分に保持した後、 Pt板を電極として、 0. 02mAZcm2の電流密度の直 流電流を育成結晶に流しながら、 20°CZhの冷却速度で育成結晶を室温まで冷却 した。 [0059] After the above cooling, the grown crystals of sample numbers 1 to 34 were blackened. Then, the blackened growth crystals of Sample Nos. 1 to 34 were placed in a resistance heating furnace while being sandwiched between Pt plates so as to face each other in the Z-axis direction. After that, these were heated to 750 ° C in the atmosphere and sufficiently maintained at that temperature, and then 20 ° while flowing a direct current with a current density of 0.02 mAZcm 2 through the growth crystal using the Pt plate as an electrode. The grown crystal was cooled to room temperature at the cooling rate of CZh.
[0060] そして、上記冷却後の試料番号 1〜34のそれぞれの育成結晶について Z軸方向に 垂直な方向に板状試料を切り出し、板状試料の両主面を鏡面研磨して、最終仕上げ 厚さが 10mmと 3mmの試料番号 1〜34の平行平板試料を作製した。 [0060] Then, for each grown crystal of sample numbers 1 to 34 after cooling, a plate sample was cut out in a direction perpendicular to the Z-axis direction, both main surfaces of the plate sample were mirror-polished, and the final finish thickness Parallel plate samples with sample numbers 1 to 34 with lengths of 10 mm and 3 mm were prepared.
[0061] そして、試料番号 1〜34の厚さ 10mmと厚さ 3mmのそれぞれの平行平板試料に っ 、て分光光度計(島津製作所製 UV- 2500)を用いて透過率の測定を行なった 。ここで、透過率の測定は積分球を用いて行ない、平行平板試料の表面に垂直に光 線が入射するように配置して行なわれた。 [0061] Then, transmittance was measured using a spectrophotometer (UV-2500 manufactured by Shimadzu Corp.) for each of the parallel plate samples of sample numbers 1 to 34 having a thickness of 10 mm and a thickness of 3 mm. Here, the transmittance was measured using an integrating sphere and arranged so that the light beam was incident perpendicularly to the surface of the parallel plate sample.
[0062] なお、厚さ 10mmと厚さ 3mmの平行平板試料につ!、て得られた透過率測定値(直 線透過率)は、各波長の光線にっ ヽて以下の式 (6)を用いて厚さ 10mmの平行平板 試料の内部透過率に変換された。 [0062] The measured transmittance (linear transmittance) for parallel plate samples with thicknesses of 10mm and 3mm was calculated using the following equation (6) for each wavelength of light. 10mm thick parallel plate using It was converted to the internal transmittance of the sample.
log τ = - 10 X (logT -logT ) /Ad · '· (6) log τ =-10 X (logT -logT) / Ad
1 2 1 2
上記の式(6)において、 τは厚さ 10mmの平行平板試料の内部透過率を示し、 Δ dは厚さ 10mmの平行平板試料と厚さ 3mmの平行平板試料の厚み差を示し、 Tは In the above equation (6), τ represents the internal transmittance of a 10 mm thick parallel plate sample, Δ d represents the thickness difference between a 10 mm thick parallel plate sample and a 3 mm thick parallel plate sample, and T is
1 厚さ 3mmの平行平板試料の反射損失を含む直線透過率を示し、 Tは厚さ 10mmの 1 Shows the linear transmittance including reflection loss of a parallel plate sample with a thickness of 3 mm.
2 2
平行平板試料の反射損失を含む直線透過率を示して!/ヽる。 Show the linear transmittance including reflection loss of parallel plate samples!
[0063] 表 1および表 2に、試料番号 1〜34の育成結晶の原料融液の組成、試料番号 1〜3 4の育成結晶における(Li Oのモル数) [0063] Tables 1 and 2 show the composition of the raw material melt of the grown crystals of sample numbers 1 to 34 and the number of moles of Li 2 O in the grown crystals of sample numbers 1 to 34
2 Z (Li Oのモル数 +Ta Oのモル数)および 2 Z (number of moles of Li 2 O + number of moles of Ta 2 O) and
2 2 5 2 2 5
試料番号 1〜34の育成結晶の形成時の第 1雰囲気ガスの酸素濃度を示す。また、表 1および表 2に、試料番号 1〜34の育成結晶の結晶成長時の状態を目視で観察した 結果、試料番号 1〜34の平行平板試料の波長 400nmの可視光 (青色)に対する上 記内部透過率の値および試料番号 1〜34の育成結晶の切り出し直前の結晶の着色 を目視で観察した結果をそれぞれ示す。 The oxygen concentration of the 1st atmosphere gas at the time of formation of the growth crystal of sample numbers 1-34 is shown. Table 1 and Table 2 show that the grown crystals of Sample Nos. 1 to 34 were visually observed, and the results for the parallel plate samples of Sample Nos. 1 to 34 with respect to visible light (blue) with a wavelength of 400 nm are shown. The values of the internal transmittance and the results of visual observation of the coloration of the crystals immediately before cutting out the grown crystals of sample numbers 1 to 34 are shown.
[0064] なお、表 1および表 2の原料融液の「Li O/ (Li O+Ta O )」の欄には、試料番号 [0064] In the column of "Li 2 O / (Li 2 O + Ta 2 O 3)" of the raw material melts in Table 1 and Table 2, the sample number
2 2 2 5 2 2 2 5
1〜34の育成結晶の形成に用いられたそれぞれの原料融液における(Li Oのモル (Li 2 O mol in each raw material melt used for the formation of growth crystals 1 to 34
2 数) Z(Li Oのモル数 +Ta Oのモル数)の値が示されている。 2 Number) The value of Z (number of moles of Li 2 O + number of moles of Ta 2 O) is shown.
2 2 5 2 2 5
[0065] また、表 1および表 2の「MgO (モル%)」の欄には、試料番号 1〜34のそれぞれに おける 100 X (添カ卩された MgOのモル数) Z (MgO添カ卩後の Li COと Ta Oと MgO [0065] In the column of “MgO (mol%)” in Tables 1 and 2, 100 X (number of moles of MgO added) in each of sample numbers 1 to 34 Z (MgO-added charge) Li CO, Ta O and MgO
2 3 2 5 とからなる混合物のモル数)の値が示されて 、る。 The value of the number of moles of the mixture consisting of 2 3 2 5 is shown.
[0066] また、表 1および表 2の「Sc O (モル%)」の欄には、試料番号 1〜30については 1 [0066] In the column of "Sc 2 O (mol%)" in Tables 1 and 2, 1 for Sample Nos. 1 to 30
2 3 twenty three
00 X (添カ卩された Sc Oのモル数) Z(Sc O添カ卩後の Li COと Ta Oと Sc Oとから 00 X (number of moles of Sc O added) Z (from Li CO, Ta O and Sc O after Sc O addition
2 3 2 3 2 3 2 5 2 3 なる混合物のモル数)の値が示されており、試料番号 31〜34については 100 X (添 カロされた Sc Oのモル数) Z(Sc Oおよび ZnO添カ卩後の Li COと Ta Oと Sc Oと Z 2 3 2 3 2 3 2 5 2 3) is shown. For sample numbers 31-34, 100 X (number of moles of scO 2 added) Z (Sc O and ZnO Li CO, Ta O, Sc O and Z
2 3 2 3 2 3 2 5 2 3 ηθと力 なる混合物のモル数)の値が示されて!/、る。 2 3 2 3 2 3 2 5 2 3 The value of ηθ and the number of moles of the force mixture is shown!
[0067] また、表 1および表 2の「ZnO (モル0 /0)」の欄には、試料番号 1〜30については 10 0 X (添カ卩された ZnOのモル数) Z (ZnO添カ卩後の Li COと Ta Oと ZnOと力らなる [0067] In addition, the column of "ZnO (mol 0/0)" in Table 1 and Table 2, (the number of moles of添Ka卩been ZnO) 10 0 X for sample No. 1 to 30 Z (ZnO added Powered by Li CO, Ta O and ZnO
2 3 2 5 2 3 2 5
混合物のモル数)の値が示されており、試料番号 31〜34については 100 X (添加さ れた ZnOのモル数) Z (Sc Oおよび ZnO添カ卩後の Li COと Ta Oと Sc Oと ZnOと からなる混合物のモル数)の値が示されて 、る。 The number of moles of the mixture is shown. For sample numbers 31-34, 100 X (number of moles of ZnO added) Z (Sc O and LiO, TaO and Sc after addition of ZnO) O and ZnO The value of the number of moles of the mixture consisting of
[0068] また、表 1および表 2の育成結晶の「Li 0/ (Li O+Ta O )」の欄には、試料番号 [0068] In the column of "Li 0 / (Li 2 O + Ta 2 O 3)" of the grown crystals in Tables 1 and 2, the sample number
2 2 2 5 2 2 2 5
1〜34の育成結晶における(Li Oのモル数) Z (Li Oのモル数 +Ta Oのモル数)の In the grown crystals of 1 to 34 (number of moles of Li 2 O) Z (number of moles of Li 2 O + number of moles of Ta 2 O)
2 2 2 5 2 2 2 5
値が示されている。なお、試料番号 1〜34の育成結晶における (Li Oのモル数) Values are shown. Note that (number of moles of Li 2 O) in the grown crystals of sample numbers 1 to 34
2 Z( 2 Z (
Li Oのモル数 +Ta Oのモル数)の値は、育成結晶の(Li Oのモル数) The value of the number of moles of Li 2 O + the number of moles of Ta 2 O is the value of the grown crystal (number of moles of Li 2 O)
5 2 / (Li Oの 5 2 / (Li O
2 2 2 モル数 +Ta Oのモル数)の値と育成結晶のキュリー温度とが比例関係にあることか 2 2 2 Number of moles + number of moles of Ta O) and the Curie temperature of the grown crystal are proportional to each other
2 5 twenty five
ら、育成結晶のキュリー温度を示差熱分析により測定し、その測定温度力 算出した 値である。 In other words, the Curie temperature of the grown crystal was measured by differential thermal analysis, and the measured temperature force was calculated.
[0069] また、表 1および表 2の「第 1雰囲気ガスの酸素濃度 (体積%)」の欄には、試料番号 1〜34のそれぞれの育成結晶の形成時における 100 X (第 1雰囲気ガス中の酸素の 体積) / (酸素と窒素とからなる第 1雰囲気ガス全体の体積)の値が示されて ヽる。 [0069] In addition, in the column of "Oxygen concentration of first atmosphere gas (volume%)" in Tables 1 and 2, 100 X (first atmosphere gas) at the time of formation of each grown crystal of sample numbers 1 to 34 is shown. The value of (volume of oxygen in) / (volume of the entire first atmosphere gas composed of oxygen and nitrogen) is indicated.
[0070] また、表 1および表 2において、「融液からの離れ発生」とは、結晶の育成中に、育 成結晶と原料融液とが離れてしまって、結晶の育成ができなくなった状態を意味して いる。 [0070] Also, in Tables 1 and 2, "occurrence of separation from the melt" means that the grown crystal is separated from the raw material melt during the growth of the crystal and the crystal cannot be grown. Means state.
[0071] [表 1] [0071] [Table 1]
满函藤嫘tίψ/^¾ίψ/ S 04ο±ορ 08ο 满 Hakoto 嫘 tίψ / ^ ¾ίψ / S 04ο ± ορ 08ο
下の範囲で形成された試料番号 2〜4のタンタル酸リチウム単結晶は、同一組成の原 料融液力 形成されているが第 1雰囲気ガスの酸素濃度が 0. 04体積%以上 0. 08 体積%以下の範囲にない試料番号 1および試料番号 5のタンタル酸リチウム単結晶 と比べて、結 The lithium tantalate single crystals of Sample Nos. 2 to 4 formed in the lower range are formed with the raw material melt force of the same composition, but the oxygen concentration of the first atmosphere gas is 0.04% by volume or more. Compared to the lithium tantalate single crystals of Sample No. 1 and Sample No. 5 that are not in the volume% or less range,
晶の黄色の着色が抑えられており、波長 400nmの可視光 (青色)の内部透過率が向 上していることがわ力る。 The yellow coloration of the crystals is suppressed, and the internal transmittance of visible light (blue) with a wavelength of 400 nm is improved.
[0074] また、同様に、第 1雰囲気ガスの酸素濃度が 0. 04体積%以上 0. 08体積%以下の 範囲で形成された試料番号 7〜9のタンタル酸リチウム単結晶は、同一組成の原料 融液カも形成されているが第 1雰囲気ガスの酸素濃度が 0. 04体積%以上 0. 08体 積%以下の範囲にない試料番号 6および試料番号 10のタンタル酸リチウム単結晶と 比べて、結晶の黄色の着色が抑えられており、波長 400nmの可視光 (青色)の内部 透過率が向上していることがわ力る。 [0074] Similarly, the lithium tantalate single crystals of Sample Nos. 7 to 9 formed in the range where the oxygen concentration of the first atmosphere gas is 0.04% by volume or more and 0.08% by volume or less have the same composition. Compared with the lithium tantalate single crystals of Sample No. 6 and Sample No. 10 where the raw material melt is also formed, but the oxygen concentration of the first atmosphere gas is not in the range of 0.04 volume% or more and 0.08 volume% or less. As a result, the yellow coloration of the crystal is suppressed and the internal transmittance of visible light (blue) having a wavelength of 400 nm is improved.
[0075] また、同様に、第 1雰囲気ガスの酸素濃度が 0. 04体積%以上 0. 08体積%以下の 範囲で形成された試料番号 12〜 14のタンタル酸リチウム単結晶は、同一組成の原 料融液力 形成されているが第 1雰囲気ガスの酸素濃度が 0. 04体積%以上 0. 08 体積%以下の範囲にない試料番号 11および試料番号 15のタンタル酸リチウム単結 晶と比べて、結晶の黄色の着色が抑えられており、波長 400nmの可視光 (青色)の 内部透過率が向上していることがわかる。 [0075] Similarly, the lithium tantalate single crystals of Sample Nos. 12 to 14 formed in the range where the oxygen concentration of the first atmosphere gas is 0.04 vol% or more and 0.08 vol% or less have the same composition. Raw material melt strength Compared to the lithium tantalate single crystals of Sample No. 11 and Sample No. 15 where the oxygen concentration of the first atmosphere gas is not in the range of 0.04% by volume or more and 0.08% by volume or less. Thus, the yellow coloration of the crystal is suppressed, and the internal transmittance of visible light (blue) with a wavelength of 400 nm is improved.
[0076] また、同様に、第 1雰囲気ガスの酸素濃度が 0. 04体積%以上 0. 08体積%以下の 範囲で形成された試料番号 17〜 19のタンタル酸リチウム単結晶は、同一組成の原 料融液力 形成されているが第 1雰囲気ガスの酸素濃度が 0. 04体積%以上 0. 08 体積%以下の範囲にない試料番号 16および試料番号 20のタンタル酸リチウム単結 晶と比べて、結晶の黄色の着色が抑えられており、波長 400nmの可視光 (青色)の 内部透過率が向上していることがわかる。 [0076] Similarly, the lithium tantalate single crystals of Sample Nos. 17 to 19 formed in the range where the oxygen concentration of the first atmosphere gas is 0.04 vol% or more and 0.08 vol% or less have the same composition. Raw material melt strength Compared to the lithium tantalate single crystals of Sample No. 16 and Sample No. 20, which are formed but the oxygen concentration of the first atmosphere gas is not in the range of 0.04% by volume or more and 0.08% by volume or less. Thus, the yellow coloration of the crystal is suppressed, and the internal transmittance of visible light (blue) with a wavelength of 400 nm is improved.
[0077] さらに、表 1および表 2に示すように、 MgO、 Sc Oおよび ZnOの少なくとも 1種が添 [0077] Further, as shown in Table 1 and Table 2, at least one of MgO, ScO and ZnO is added.
2 3 twenty three
カロされた原料融液カゝら形成された試料番号 21〜34のタンタル酸リチウム単結晶は、 結晶の黄色の着色がより抑えられる傾向にあり、波長 400nmの可視光 (青色)の内 部透過率がより向上する傾向にあった。 [0078] 今回開示された実施の形態および実施例はすべての点で例示であって制限的な ものではないと考えられるべきである。本発明の範囲は上記した説明ではなくて請求 の範囲によって示され、請求の範囲と均等の意味および範囲内でのすべての変更が 含まれることが意図される。 The lithium tantalate single crystals of Sample Nos. 21 to 34 formed from the calcined raw material melt tend to suppress the yellow coloration of the crystals and transmit visible light (blue) with a wavelength of 400 nm. The rate tended to improve. [0078] The embodiments and examples disclosed this time should be considered as illustrative in all points and not restrictive. The scope of the present invention is defined by the terms of the claims, rather than the description above, and is intended to include any modifications within the scope and meaning equivalent to the terms of the claims.
産業上の利用可能性 Industrial applicability
[0079] 本発明によれば、黄色の着色を抑えて可視光の透過率を向上することができるタン タル酸リチウム単結晶の製造方法を提供することができる。 [0079] According to the present invention, it is possible to provide a method for producing a lithium tantalate single crystal capable of suppressing yellow coloring and improving visible light transmittance.
Claims
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| JP2010228995A (en) * | 2009-03-27 | 2010-10-14 | Citizen Holdings Co Ltd | Heat treatment method for langate single crystals |
| JP2015051890A (en) * | 2013-09-05 | 2015-03-19 | 株式会社フジクラ | Method for producing lithium tantalate single crystal |
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| JPS5619047B2 (en) * | 1974-08-29 | 1981-05-02 | ||
| JPH0616500A (en) * | 1992-04-24 | 1994-01-25 | Hitachi Metals Ltd | Lithium tantalate single crystal single crystal substrate and optical element |
| JP2001316195A (en) * | 2000-02-24 | 2001-11-13 | Toshiba Corp | Apparatus and method for producing oxide single crystal |
| WO2006123740A1 (en) * | 2005-05-19 | 2006-11-23 | Murata Manufacturing Co., Ltd. | Lithium tantalate single crystal and optical image pickup device |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2003063894A (en) * | 2001-08-29 | 2003-03-05 | Kyocera Corp | Lithium tantalate single crystal and method for producing the same |
| JP2004328712A (en) * | 2003-01-16 | 2004-11-18 | Sumitomo Metal Mining Co Ltd | Lithium tantalate substrate and method for producing the same |
-
2007
- 2007-06-06 JP JP2008521163A patent/JP4877324B2/en not_active Expired - Fee Related
- 2007-06-06 WO PCT/JP2007/061430 patent/WO2007145110A1/en not_active Ceased
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5619047B2 (en) * | 1974-08-29 | 1981-05-02 | ||
| JPH0616500A (en) * | 1992-04-24 | 1994-01-25 | Hitachi Metals Ltd | Lithium tantalate single crystal single crystal substrate and optical element |
| JP2001316195A (en) * | 2000-02-24 | 2001-11-13 | Toshiba Corp | Apparatus and method for producing oxide single crystal |
| WO2006123740A1 (en) * | 2005-05-19 | 2006-11-23 | Murata Manufacturing Co., Ltd. | Lithium tantalate single crystal and optical image pickup device |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2010228995A (en) * | 2009-03-27 | 2010-10-14 | Citizen Holdings Co Ltd | Heat treatment method for langate single crystals |
| JP2015051890A (en) * | 2013-09-05 | 2015-03-19 | 株式会社フジクラ | Method for producing lithium tantalate single crystal |
Also Published As
| Publication number | Publication date |
|---|---|
| JP4877324B2 (en) | 2012-02-15 |
| JPWO2007145110A1 (en) | 2009-10-29 |
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