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WO2007001848A3 - High refractive index fluids with low absorption for immersion lithography - Google Patents

High refractive index fluids with low absorption for immersion lithography Download PDF

Info

Publication number
WO2007001848A3
WO2007001848A3 PCT/US2006/023081 US2006023081W WO2007001848A3 WO 2007001848 A3 WO2007001848 A3 WO 2007001848A3 US 2006023081 W US2006023081 W US 2006023081W WO 2007001848 A3 WO2007001848 A3 WO 2007001848A3
Authority
WO
WIPO (PCT)
Prior art keywords
immersion lithography
refractive index
high refractive
low absorption
solvent
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/US2006/023081
Other languages
French (fr)
Other versions
WO2007001848A2 (en
Inventor
William A Wojtczak
Dean Dewulf
Roger Moulton
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sachem Inc
Original Assignee
Sachem Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sachem Inc filed Critical Sachem Inc
Publication of WO2007001848A2 publication Critical patent/WO2007001848A2/en
Publication of WO2007001848A3 publication Critical patent/WO2007001848A3/en
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70341—Details of immersion lithography aspects, e.g. exposure media or control of immersion liquid supply
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2041—Exposure; Apparatus therefor in the presence of a fluid, e.g. immersion; using fluid cooling means

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)

Abstract

An immersion lithography fluid, including a solvent, and at least one additive soluble in the solvent, in which the immersion lithography fluid has a refractive index greater than the refractive index of the solvent at a selected wavelength and the immersion lithography fluid is acceptable for use in immersion lithography. In one embodiment, the immersion lithography fluid includes an ionic liquid. In one embodiment, an immersion lithography system including an optical surface, a wafer support for holding a workpiece, and the immersion lithography fluid disposed between the optical surface and the workpiece and contacting at least a portion of the optical surface.
PCT/US2006/023081 2005-06-24 2006-06-13 High refractive index fluids with low absorption for immersion lithography Ceased WO2007001848A2 (en)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US69374805P 2005-06-24 2005-06-24
US60/693,748 2005-06-24
US73591205P 2005-11-10 2005-11-10
US60/735,912 2005-11-10

Publications (2)

Publication Number Publication Date
WO2007001848A2 WO2007001848A2 (en) 2007-01-04
WO2007001848A3 true WO2007001848A3 (en) 2007-06-28

Family

ID=37309341

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2006/023081 Ceased WO2007001848A2 (en) 2005-06-24 2006-06-13 High refractive index fluids with low absorption for immersion lithography

Country Status (1)

Country Link
WO (1) WO2007001848A2 (en)

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
RU2051940C1 (en) * 1993-06-22 1996-01-10 Производственное объединение "Новосибирский приборостроительный завод" Immersion liquid
US20050042554A1 (en) * 2003-07-28 2005-02-24 Asml Netherlands B.V. Lithographic apparatus, device manufacturing method and a substrate
WO2005050324A2 (en) * 2003-11-05 2005-06-02 Dsm Ip Assets B.V. A method and apparatus for producing microchips
WO2005062351A1 (en) * 2003-12-19 2005-07-07 Canon Kabushiki Kaisha Exposure apparatus and device manufacturing method
EP1557721A2 (en) * 2004-01-23 2005-07-27 Air Products And Chemicals, Inc. Immersion lithography fluids
WO2005074606A2 (en) * 2004-02-03 2005-08-18 Rochester Institute Of Technology Method of photolithography using a fluid and a system thereof
EP1610180A2 (en) * 2004-06-09 2005-12-28 Matsushita Electric Industrial Co., Ltd. Semiconductor manufacturing apparatus and pattern formation method
WO2006003373A2 (en) * 2004-07-01 2006-01-12 The Boc Group Plc Immersion photolithography system

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
RU2051940C1 (en) * 1993-06-22 1996-01-10 Производственное объединение "Новосибирский приборостроительный завод" Immersion liquid
US20050042554A1 (en) * 2003-07-28 2005-02-24 Asml Netherlands B.V. Lithographic apparatus, device manufacturing method and a substrate
WO2005050324A2 (en) * 2003-11-05 2005-06-02 Dsm Ip Assets B.V. A method and apparatus for producing microchips
WO2005062351A1 (en) * 2003-12-19 2005-07-07 Canon Kabushiki Kaisha Exposure apparatus and device manufacturing method
EP1557721A2 (en) * 2004-01-23 2005-07-27 Air Products And Chemicals, Inc. Immersion lithography fluids
WO2005074606A2 (en) * 2004-02-03 2005-08-18 Rochester Institute Of Technology Method of photolithography using a fluid and a system thereof
EP1610180A2 (en) * 2004-06-09 2005-12-28 Matsushita Electric Industrial Co., Ltd. Semiconductor manufacturing apparatus and pattern formation method
WO2006003373A2 (en) * 2004-07-01 2006-01-12 The Boc Group Plc Immersion photolithography system

Also Published As

Publication number Publication date
WO2007001848A2 (en) 2007-01-04

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