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WO2007079661A1 - Laser nd:luvo4 a longueur d'ondes de 916nm - Google Patents

Laser nd:luvo4 a longueur d'ondes de 916nm Download PDF

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Publication number
WO2007079661A1
WO2007079661A1 PCT/CN2006/003798 CN2006003798W WO2007079661A1 WO 2007079661 A1 WO2007079661 A1 WO 2007079661A1 CN 2006003798 W CN2006003798 W CN 2006003798W WO 2007079661 A1 WO2007079661 A1 WO 2007079661A1
Authority
WO
WIPO (PCT)
Prior art keywords
laser
transmittance
gain medium
luv0
crystal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/CN2006/003798
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English (en)
Chinese (zh)
Inventor
Zhiguo Zhang
Zhiyi Wei
Ling Zhang
Chunyu Zhang
Huaijin Zhang
Jiyang Wang
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shandong University
Institute of Physics of CAS
Original Assignee
Shandong University
Institute of Physics of CAS
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shandong University, Institute of Physics of CAS filed Critical Shandong University
Publication of WO2007079661A1 publication Critical patent/WO2007079661A1/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/14—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range characterised by the material used as the active medium
    • H01S3/16—Solid materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/09—Processes or apparatus for excitation, e.g. pumping
    • H01S3/091—Processes or apparatus for excitation, e.g. pumping using optical pumping
    • H01S3/094—Processes or apparatus for excitation, e.g. pumping using optical pumping by coherent light
    • H01S3/0941—Processes or apparatus for excitation, e.g. pumping using optical pumping by coherent light of a laser diode
    • H01S3/09415—Processes or apparatus for excitation, e.g. pumping using optical pumping by coherent light of a laser diode the pumping beam being parallel to the lasing mode of the pumped medium, e.g. end-pumping
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S2302/00—Amplification / lasing wavelength
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/10—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
    • H01S3/106—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating by controlling devices placed within the cavity
    • H01S3/108—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating by controlling devices placed within the cavity using non-linear optical devices, e.g. exhibiting Brillouin or Raman scattering
    • H01S3/109—Frequency multiplication, e.g. harmonic generation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/14—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range characterised by the material used as the active medium
    • H01S3/16—Solid materials
    • H01S3/1601—Solid materials characterised by an active (lasing) ion
    • H01S3/1603—Solid materials characterised by an active (lasing) ion rare earth
    • H01S3/1611—Solid materials characterised by an active (lasing) ion rare earth neodymium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/14—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range characterised by the material used as the active medium
    • H01S3/16—Solid materials
    • H01S3/163—Solid materials characterised by a crystal matrix
    • H01S3/1671—Solid materials characterised by a crystal matrix vanadate, niobate, tantalate

Definitions

  • the present invention relates to a laser device, and more particularly to a Nd:LuV0 4 (ytterbium-doped yttrium vanadate) laser having a wavelength of 916 nm.
  • Nd:LuV0 4 ytterbium-doped yttrium vanadate
  • Blue lasers have very important application prospects in high-density optical storage, ultrashort pulse, digital video technology, spectroscopy, laser medicine, laser large-screen display, marine military applications and underwater resource detection.
  • Nd LuV0 4
  • Nd LuV0 4
  • YV0 ⁇ B Nd GdV0 4 crystal
  • the fundamental frequency laser output of 1. 06 um and 1. 34 um was obtained using a Nd: LuV0 4 crystal.
  • the present invention adopts the following technical solutions.
  • a wavelength of 916 nm: ⁇ 0 4 laser comprising a pump source, an optical coupling system, a laser cavity; the laser cavity is composed of at least two laser endoscopes and a laser gain medium placed between the laser end mirrors
  • the laser gain medium is a Nd: V0 4 crystal, and the pump source is pumped by the optical coupling system.
  • the input end mirror combines the laser end mirror and the laser gain medium by coating on one end surface of the laser gain medium
  • the other end of the laser gain medium is coated with an anti-reflection film; or, the input end mirror adopts a separate cavity mirror coating as an input end mirror, and both ends of the laser gain medium are coated with an anti-reflection film.
  • the output coupling mirror is also coated to suppress the laser excitation of the /2 - 4 1 11/2 and 4 F 3/2 - 4 1 13/2 lasers, resulting in 4 F 3/2 - 4 I 9/ 2 high-efficiency laser operation of the 916nm laser at the energy level transition.
  • the pump source adopts an end face or a side pumping manner to the laser gain medium.
  • the coating parameters are:
  • the output end of the 1 ⁇ ⁇ 0 4 crystal is plated with an antireflection film for 916 nm, 1. 06 um, 1. 34;
  • the transmittance of the second end mirror of the laser as the output end mirror of the laser cavity is: (a) when the output of the laser is 916 nm: for the 916 nm transmittance T is 0. 05% - 10%, for 1. 06 um transmittance T 90%, for 1. 34um transmittance T 90%; (b) when outputting 458nm laser: for 916 into the reflectivity R 99. 9%, for 1. 06um transmittance T 90%, for 1. 34um through The ⁇ rate is 90%, and the high transmittance is 458 nm.
  • the coating parameter of the second end mirror of the laser as the output end mirror of the laser cavity is 95% transmittance at 458 nm when outputting the 458 ran laser.
  • the laser cavity is a linear cavity or a folded cavity structure.
  • the laser cavity further includes an intracavity function component, and the intracavity function component includes a Q-switching component, a mode-locking component, and a frequency doubling component.
  • the Q-switching component is an active Q-switching component or a passive passive Q-switching component to implement a Q-switching operation
  • the Clamping component is an active clamping component or a passive clamping component to implement a mode-locking operation
  • the crystal is a lithium triborate (LB0), barium metaborate (BB0), barium borate (BiB0), or potassium citrate (KNb0 3 ) crystal, which achieves a frequency-doubled output.
  • the pump source is an end-pumped LD Bar (Laser Diode Bar, LD Bar for short) fiber-coupled semiconductor laser, or an LD Bar beam-shaping semiconductor laser, or an LD single-tube laser; or, the pump source It is a side-pumped single LD Bar array laser, or multiple LD Bar array lasers.
  • LD Bar Laser Diode Bar, LD Bar for short
  • LD Bar beam-shaping semiconductor laser or an LD single-tube laser
  • the pump source It is a side-pumped single LD Bar array laser, or multiple LD Bar array lasers.
  • the laser gain medium is a sheet or a single rod Nd:LuV0 4 crystal or a composite rod Nd:LuV0 4 crystal.
  • the composite rod Nd : LuV0 4 crystal is made of Nd: LuV0 4 crystal, and the laser crystal is diffusion bonded to the undoped YAG or LuV0 4 crystal at both ends.
  • a cooling device is further included for cooling the laser gain medium, and the cooling device can be adjusted at a temperature of 1 to 20 ° C according to different operating conditions, and the temperature control accuracy is better than ⁇ 1 ° C.
  • the cooling device is a water cooling device, or a TEC (Thermoelectric cooling, TEC for short) cooling device, or a water-cooled and air-cooled mixed cooling device.
  • TEC Thermoelectric cooling, TEC for short
  • a selection device for controlling the quality of the beam is further included in the laser cavity.
  • the temperature control device for controlling the temperature of the frequency doubling crystal is controlled by a different frequency doubling crystal, and the temperature control accuracy is better than ⁇ 0. 5 e C.
  • the invention utilizes the laser crystal to realize the characteristics of laser operation at the 4 F 3/2 - 2 energy level transition, adopts the Nd : LuV0 4 laser crystal, and successfully suppresses the 4 F 3/ by the reasonable membrane design of the resonant cavity mirror.
  • 2 - 4 1 administrat /2 and n ⁇ % laser operation, the operation of the 916nm laser under the 4 F 3/2 _ 4 I 9/2 energy level transition was obtained.
  • the continuous laser operation of 916 nm was obtained.
  • Figure 1 is a schematic view showing the structure of Embodiments 1 and 3 of the present invention.
  • Fig. 2 is a schematic view showing the structure of a second embodiment of the present invention.
  • a Nd:LuV0 4 fundamental (916 nm) and doubled (458 nm) laser was fabricated using a fiber-coupled semiconductor laser as the end-pump source.
  • the pump source 1 is a 25 W fiber-coupled semiconductor laser having an operating wavelength of 808 nm, a core diameter of 200, and a numerical aperture of 0.22.
  • the pump source 1 and the optical coupling system 2 are optically coupled and optically coupled.
  • the focused spot of the system 2 is approximately 240 Um in diameter and is incident on the end face of the laser gain medium 4 for pumping;
  • the laser gain medium 4 is 0.5 at. % Nd ion doped Nd: LuV0 4 crystal, the size of which is 3 X 3 X 2 mm 3 ;
  • the laser gain medium 4 is cooled by a cooling device.
  • the intracavity functional component 5 is placed in the laser cavity, and the intracavity functional component 5 in this embodiment is a LB0 frequency doubling crystal, and the two end faces of the frequency doubling crystal It is coated with an antireflection coating of 916 nm and 458 nm.
  • the size of the frequency doubling crystal is 3 X 3 X 10 mm 3 , and it is cut according to the type I phase matching method.
  • the fundamental resonant cavity length is 18 mm, and the frequency doubling experimental cavity length is 40 mm.
  • Example 2 A 900 mW 916 ran laser output and a 50 m double frequency 458 ran blue output were obtained using the apparatus of the present embodiment.
  • Example 2 A 900 mW 916 ran laser output and a 50 m double frequency 458 ran blue output were obtained using the apparatus of the present embodiment.
  • Example 2 A 900 mW 916 ran laser output and a 50 m double frequency 458 ran blue output were obtained using the apparatus of the present embodiment.
  • Example 2 A 900 mW 916 ran laser output and a 50 m double frequency 458 ran blue output were obtained using the apparatus of the present embodiment.
  • Example 2 A 900 mW 916 ran laser output and a 50 m double frequency 458 ran blue output were obtained using the apparatus of the present embodiment.
  • Example 2 A 900 mW 916 ran laser output and a 50 m double frequency 458 ran blue output were obtained using the apparatus of the present embodiment.
  • Example 2 A 900 mW 916 ran laser output and a 50 m double frequency 458 ran blue output
  • a single LD Bar array laser was used as the side pump source to fabricate a Nd:LuV0 4 fundamental frequency (916 nm) laser.
  • the pump source 1 is a 40 W single LD Bar array laser with an operating wavelength of 808 nm.
  • the spot size focused by the optical coupling system 2 is approximately 100 X 500 urn 2 , and the pump source 1 and optics are shown.
  • the coupling system 2 is integrated; the laser gain medium 4 is 0.2 at. % Nd ion doped Nd : LuV0 4 crystal, the size is 3 X 3 X 5 mm 3 ; the laser gain medium 4 is cooled by a cooling device In this embodiment, a heat sink water cooling device (not shown) is used, and the temperature is controlled at 6 ° C; the film is directly coated on the pump end surface of the laser gain medium 4, so that the laser as the input end mirror of the laser cavity is first.
  • a Nd : LuV0 4 fundamental frequency (916 nm) laser was fabricated using a single diode tube as the end pump source.
  • pump source 1 is an 8 W single-tube semiconductor laser with an operating wavelength of 808 nm and an emission cross section of 150 X 1 um 2 .
  • the spot size after focusing by optical coupling system 2 is approximately 50 X 50 um 2 .
  • the laser gain medium 4 is 0.2 at at % Nd ion doped Nd :LuV0 4 crystal, the size of which is 3 X 3 X 4 mm 3 ; the laser gain medium 4 is cooled by a cooling device, and the embodiment uses heat a submersible cooling device (not shown) whose temperature is controlled at 6 ° C; directly coated on the pump end face of the laser gain medium 4, so that the first end mirror 3 and the laser gain of the laser as the laser cavity input end mirror
  • the non-pump end of the laser gain medium 4 is plated with an antireflection coating for 916 nm and 1.06 um and 1.34 um; the second laser end mirror 6 as a laser output mirror is flat with a radius of curvature of 100 mm

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  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Optics & Photonics (AREA)
  • Lasers (AREA)

Abstract

Un laser Nd:LuVO4 à longueur d'ondes 916nm comprend une source de pompage (1), un système de couplage optique (2) et un résonateur laser, qui comprend au moins deux miroirs à cavité (3, 6) et un milieu laser à gain (4) entre les deux miroirs (3, 6). Le milieu laser à gain (4) est un cristal Nd:LuVO4 et la source de pompage (1) pompe le milieu laser à gain (4) par le biais du système de couplage optique (2). Le laser Nd:LuVO4 l permet d'obtenir un laser bleu foncé 458nm après doublage de la fréquence.
PCT/CN2006/003798 2006-01-09 2006-12-31 Laser nd:luvo4 a longueur d'ondes de 916nm Ceased WO2007079661A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
CNA2006100001902A CN101000997A (zh) 2006-01-09 2006-01-09 波长为916nm的Nd:LuVO4激光器
CN200610000190.2 2006-01-09

Publications (1)

Publication Number Publication Date
WO2007079661A1 true WO2007079661A1 (fr) 2007-07-19

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CN (1) CN101000997A (fr)
WO (1) WO2007079661A1 (fr)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106532418A (zh) * 2016-12-13 2017-03-22 天水师范学院 太阳能电池板驱动的低阈值Nd：YAG激光器
CN108574194A (zh) * 2018-07-02 2018-09-25 南京天正明日自动化有限公司 一种微型脊波导激光器、小型激光器及其制备方法
CN113131335A (zh) * 2021-04-13 2021-07-16 山东大学 一种基于自倍频激光在农业中对植物光合作用的补偿系统
CN114725763A (zh) * 2022-04-01 2022-07-08 常州英诺激光科技有限公司 复合晶体、高功率双端泵浦装置
CN116646805A (zh) * 2023-06-09 2023-08-25 南京亿高医疗科技股份有限公司 一种多波长大能量百皮秒激光器

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CN101976797B (zh) * 2010-10-09 2011-09-07 山西大学 单光子光学谐振腔的锁定方法及其装置
CN102354901B (zh) * 2011-09-30 2014-07-23 武汉新特光电技术有限公司 半导体侧面泵浦固体激光器
CN102810811A (zh) * 2012-07-10 2012-12-05 苏州科医世凯半导体技术有限责任公司 一种医用蓝光激光器
CN106374329A (zh) * 2016-12-01 2017-02-01 江苏师范大学 正交偏振双波长同步谐振锁模激光器
CN112787208A (zh) * 2021-03-24 2021-05-11 镭泽精密制造(苏州)有限公司 一种ld端泵s-mopa激光器
CN115000791A (zh) * 2022-07-03 2022-09-02 海南师范大学 一种海洋探测脉冲激光光源装置

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Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106532418A (zh) * 2016-12-13 2017-03-22 天水师范学院 太阳能电池板驱动的低阈值Nd：YAG激光器
CN106532418B (zh) * 2016-12-13 2024-05-07 天水师范学院 太阳能电池板驱动的低阈值Nd：YAG激光器
CN108574194A (zh) * 2018-07-02 2018-09-25 南京天正明日自动化有限公司 一种微型脊波导激光器、小型激光器及其制备方法
CN113131335A (zh) * 2021-04-13 2021-07-16 山东大学 一种基于自倍频激光在农业中对植物光合作用的补偿系统
CN114725763A (zh) * 2022-04-01 2022-07-08 常州英诺激光科技有限公司 复合晶体、高功率双端泵浦装置
CN116646805A (zh) * 2023-06-09 2023-08-25 南京亿高医疗科技股份有限公司 一种多波长大能量百皮秒激光器

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