WO2007055669A2 - Solution de gravure reyclable - Google Patents
Solution de gravure reyclable Download PDFInfo
- Publication number
- WO2007055669A2 WO2007055669A2 PCT/TN2006/000001 TN2006000001W WO2007055669A2 WO 2007055669 A2 WO2007055669 A2 WO 2007055669A2 TN 2006000001 W TN2006000001 W TN 2006000001W WO 2007055669 A2 WO2007055669 A2 WO 2007055669A2
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- etching solution
- solution according
- copper
- etching
- carbonate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Ceased
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F1/00—Etching metallic material by chemical means
- C23F1/10—Etching compositions
- C23F1/14—Aqueous compositions
- C23F1/16—Acidic compositions
- C23F1/18—Acidic compositions for etching copper or alloys thereof
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F1/00—Etching metallic material by chemical means
- C23F1/10—Etching compositions
- C23F1/14—Aqueous compositions
- C23F1/32—Alkaline compositions
- C23F1/34—Alkaline compositions for etching copper or alloys thereof
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K13/00—Etching, surface-brightening or pickling compositions
- C09K13/02—Etching, surface-brightening or pickling compositions containing an alkali metal hydroxide
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F1/00—Etching metallic material by chemical means
- C23F1/10—Etching compositions
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F1/00—Etching metallic material by chemical means
- C23F1/10—Etching compositions
- C23F1/14—Aqueous compositions
- C23F1/16—Acidic compositions
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F1/00—Etching metallic material by chemical means
- C23F1/46—Regeneration of etching compositions
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/02—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding
- H05K3/06—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding the conductive material being removed chemically or electrolytically, e.g. by photo-etch process
- H05K3/067—Etchants
Definitions
- the invention relates to an aqueous etching solution that can be recycled by reducing the concentration of copper.
- the circuit image is masked either with screen printing or with the photosensitive method to form a "resist image".
- the copper surface not covered by the mask is etched by the appropriate etching solution.
- the tracks and the metallized holes are protected by a metal resistor.
- the organic resist is stripped and the bare copper will be etched by a suitable solution.
- the tracks and the metallized conductance holes are protected by the metal resistor during etching processes which works based on ammonia solutions and copper salt.
- the disadvantages are a limited etch rate, a slow etch solution processing regeneration process, and a chemical parameter instability that directly affects production.
- This invention is based on the task of accelerating the etching rate, regeneration of the spent solution and reusing it in the etching process with stability of the chemical parameters.
- the etching solution contains as another catalyst Bromacetylbiphenyl and its derivatives.
- Bromacetylbiphenyl as a catalyst also supports the regeneration process of the etching solution used. It also has a role of suppressing acceleration spikes and accelerating copper recycling.
- an additional accelerator and catalyst of bromacetylbiphenyl is used in an amount of from 5 to 200 mg / l of etching solution, preferably in an amount of 70 mg / l.
- Bromacetylbiphenyl preferably as 4-bromo-ethylbiphenyl C14H11BrO supports complex oxidation of [Cu (NH 3 ) 2] + complex [Cu (NHs) 4 ] ++ in regeneration in the regeneration process. In this way, the regeneration process of the etching solution will be accelerated.
- the [Cu (NHs) 2 ] + ions slowed the etching process and increased the recycling of copper, for this reason [Cu (NH 3 ) 2 ] + must be oxidized, also with [Cu (NH 3 )] ++ in etching, also the [Cu (NH 3 ) 2] + must be stabilized by a stabilizer in the recycling process.
- the etching process is following this reaction:
- the regeneration part works with NH4 +, NH3, and the complex oxygen following this reaction.
- the recycling part works with electric current following these reactions.
- Vanadium pentoxide or other compound of vanadium used as a catalyst to increase the etching rate.
- the etching rate and the etching solution regeneration rate used will increase at the same time with process stability and an increase in the recycling rate.
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Manufacturing Of Printed Circuit Boards (AREA)
- ing And Chemical Polishing (AREA)
- Catalysts (AREA)
Abstract
Description
Claims
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2008539995A JP2009516071A (ja) | 2005-11-10 | 2006-11-09 | 再生利用可能なエッチング溶液 |
| EP06824664A EP2010695A2 (fr) | 2005-11-10 | 2006-11-09 | Solution de gravure reyclable |
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TNSN.05.283 | 2005-11-10 | ||
| TN05283 | 2005-11-10 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| WO2007055669A2 true WO2007055669A2 (fr) | 2007-05-18 |
| WO2007055669A3 WO2007055669A3 (fr) | 2007-11-01 |
Family
ID=37982804
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| PCT/TN2006/000001 Ceased WO2007055669A2 (fr) | 2005-11-10 | 2006-11-09 | Solution de gravure reyclable |
Country Status (6)
| Country | Link |
|---|---|
| EP (1) | EP2010695A2 (fr) |
| JP (1) | JP2009516071A (fr) |
| KR (1) | KR20080075148A (fr) |
| CN (1) | CN101443480A (fr) |
| DE (1) | DE102006036888A1 (fr) |
| WO (1) | WO2007055669A2 (fr) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102019430B (zh) * | 2009-09-18 | 2012-09-05 | 福建师范大学福清分校 | 一种碱性蚀刻废液回收铜及碱性蚀刻液的回收方法 |
| CN102154646A (zh) * | 2011-03-04 | 2011-08-17 | 侯延辉 | 一种不产生氯气的酸性蚀刻液及其催化剂 |
| CN106702387A (zh) * | 2015-11-18 | 2017-05-24 | 陶克(苏州)机械设备有限公司 | 一种在线碱性硫酸铵刻蚀废液循环再生系统 |
| CN105603434B (zh) * | 2016-03-20 | 2018-04-13 | 华南理工大学 | 一种光催化pcb酸性蚀刻液循环回收利用的方法 |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4311551A (en) * | 1979-04-12 | 1982-01-19 | Philip A. Hunt Chemical Corp. | Composition and method for etching copper substrates |
| DE3429902A1 (de) * | 1984-08-14 | 1986-02-27 | Hans Höllmüller Maschinenbau GmbH & Co, 7033 Herrenberg | Verfahren zum aetzen von kupferfilmen auf leiterplatten unter elektrolytischer rueckgewinnung von kupfer aus der aetzloesung |
| AT395177B (de) * | 1990-07-05 | 1992-10-12 | Provera Gmbh | Aetzloesung |
| DE19800605A1 (de) * | 1998-01-12 | 1999-07-15 | Helmar Haug | Ammoniakalische Ätzlösung |
| DE102004030924A1 (de) * | 2004-06-25 | 2006-01-19 | Elo-Chem-Csm Gmbh | Elektrolytisch regenerierbare Ätzlösung |
-
2006
- 2006-08-04 DE DE102006036888A patent/DE102006036888A1/de not_active Withdrawn
- 2006-11-09 EP EP06824664A patent/EP2010695A2/fr not_active Withdrawn
- 2006-11-09 WO PCT/TN2006/000001 patent/WO2007055669A2/fr not_active Ceased
- 2006-11-09 JP JP2008539995A patent/JP2009516071A/ja active Pending
- 2006-11-09 CN CNA2006800418069A patent/CN101443480A/zh active Pending
- 2006-11-09 KR KR1020087013509A patent/KR20080075148A/ko not_active Withdrawn
Also Published As
| Publication number | Publication date |
|---|---|
| WO2007055669A3 (fr) | 2007-11-01 |
| DE102006036888A1 (de) | 2007-05-16 |
| JP2009516071A (ja) | 2009-04-16 |
| CN101443480A (zh) | 2009-05-27 |
| EP2010695A2 (fr) | 2009-01-07 |
| KR20080075148A (ko) | 2008-08-14 |
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