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WO2007054380A1 - Capteur - Google Patents

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Publication number
WO2007054380A1
WO2007054380A1 PCT/EP2006/063152 EP2006063152W WO2007054380A1 WO 2007054380 A1 WO2007054380 A1 WO 2007054380A1 EP 2006063152 W EP2006063152 W EP 2006063152W WO 2007054380 A1 WO2007054380 A1 WO 2007054380A1
Authority
WO
WIPO (PCT)
Prior art keywords
sensor
electrical
sensor according
temperature
sensor component
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/EP2006/063152
Other languages
German (de)
English (en)
Inventor
Bernhard Opitz
Ando Feyh
Oliver Wolst
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Robert Bosch GmbH
Original Assignee
Robert Bosch GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Robert Bosch GmbH filed Critical Robert Bosch GmbH
Priority to EP06841252.7A priority Critical patent/EP1902282B1/fr
Priority to US11/921,669 priority patent/US8007169B2/en
Publication of WO2007054380A1 publication Critical patent/WO2007054380A1/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
    • G01J5/10—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
    • G01J5/10—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors
    • G01J5/20—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors using resistors, thermistors or semiconductors sensitive to radiation, e.g. photoconductive devices
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01K—MEASURING TEMPERATURE; MEASURING QUANTITY OF HEAT; THERMALLY-SENSITIVE ELEMENTS NOT OTHERWISE PROVIDED FOR
    • G01K7/00—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements
    • G01K7/01—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements using semiconducting elements having PN junctions
    • G01K7/015—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements using semiconducting elements having PN junctions using microstructures, e.g. made of silicon
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
    • G01N27/02—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance
    • G01N27/04—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating resistance
    • G01N27/14—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating resistance of an electrically-heated body in dependence upon change of temperature
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/49—Method of mechanical manufacture
    • Y10T29/49002—Electrical device making
    • Y10T29/49117—Conductor or circuit manufacturing

Definitions

  • the invention relates to a sensor, in particular a thermal and / or gas sensor according to the preamble of claim 1, and a method for its production.
  • thermo sensors using temperature-dependent resistors, preferably Pt resistors, or with the help of thermopiles, these are structures for exploiting the thermoelectric voltage at transitions of two different metals or metal / polysilicon, to realize in thin-film technology.
  • these structures are applied to a thin dielectric membrane, can be sensed by the low thermal conductivity, for example, changes in Temperaturproeuropas over this membrane. This principle is used, for example, in air mass sensors.
  • Both embodiments have due to their manufacturing process on a high susceptibility to drift and therefore have the disadvantage that they must be stabilized very expensive, since the variable over the life material properties cause a drift of the sensor element. Even with such stabilization (e.g., annealing processes), these drifts are in part still enormous.
  • the temperature profile is set via thin-film structures, eg platinum resistance heaters.
  • Membrane production is generally realized by a bulk micromechanical (BMM) process, ie all material up to the membrane has to be removed from the back of the substrate by means of anisotropic etching, eg with KOH (potassium hydroxide).
  • BMM bulk micromechanical
  • anisotropic etching eg with KOH (potassium hydroxide).
  • KOH potassium hydroxide
  • a production process is known in which a 1 ⁇ m thick silicon membrane is produced on a wafer with a layer thickness of 360 ⁇ m by removing 359 ⁇ m of the silicon layer by means of an etching process.
  • thermal sensors for example, in finger pressure sensors application.
  • the special sensor structures, heaters, sensors and the like are applied to a BuIk substrate with low thermal conductivity and comparatively stable mechanical properties, such as ceramics, since the mechanical stress in this application is significantly higher.
  • the heat flow through the skin grooves is now detected and evaluated depending on the location.
  • thermally decoupled membranes are also of interest in the area of gas sensors.
  • Semiconductor-based gas sensors are typically based on adsorption-based resistance change of metal oxide layers or potential change of functional gate layer stacks of field-effect transistors.
  • these sensors must be operated at elevated temperatures, typically T> 150 ° C.
  • diaphragms made with elaborate process steps are also used for thermal decoupling in order to minimize the heating power or to enable fast pulsed operation, if necessary.
  • a method for producing such a membrane is e.g. from DE 102 00 40 24 285.2 "Microstructured component and Veriahren for its preparation" known.
  • thermopiles and Pt heater and probe Another disadvantage of conventional systems is given by their structure. Either a high sensitivity can be realized, or else a high mechanical stability. Both properties can not be implemented simultaneously with previously known methods. A relatively coarse spatial resolution, due to large area structures of the thermopiles and Pt heater and probe, is considered disadvantageous.
  • the present invention is therefore an object of the invention to improve a sensor of the type set forth.
  • the invention relates to a sensor according to the preamble of claim 1, which is characterized in that it has a temperature-dependent electrical property exhibiting sensor element in the form of a resistor or an impedance having.
  • a flow-through voltage U F caused by an electrical current flowing through the sensor component and dropping across it can be generated.
  • the current through the component can in a preferred embodiment be impressed on the component by a current source, in particular a constant current source.
  • a current source in particular a constant current source.
  • a voltage increase can be provided by a series connection of such components in the following.
  • this may further comprise a heating element.
  • a reference temperature detecting component and / or the formation of a gas-sensitive element is the application such a sensor still significantly increased.
  • electrodes typically Pt electrodes
  • FET field-effect transistors
  • the gate functional layer typically includes oxide layer and catalytic metal. As heating, e.g. Diodes or FETs are used.
  • An essential core of the invention is the use of porous silicon.
  • a thermal insulation element has a porous structure which, in addition to the positive thermal property, also retains a high stability.
  • porous silicon achieves electrical decoupling from the substrate (resistivity of porous silicon type about 10 6 ohm-centimeter).
  • an additional carrier layer can be applied over the structural structure described so far, which covers at least individual, but preferably several or also all sensor elements.
  • After covering the desired surface areas can be partially or completely removed by appropriately trained openings serving in the previous embodiments as a thermal insulation element porous silicon.
  • Particularly suitable for this purpose are etching processes, e.g. wet-chemical etching by means of KOH, H2O2 with HF or dry etching processes such as C1F3.
  • etching processes e.g. wet-chemical etching by means of KOH, H2O2 with HF or dry etching processes such as C1F3.
  • the carrier layer or membrane preferably also consists of a thermally highly insulating material in order to even have as little influence as possible on thermal couplings.
  • Another advantage is achieved by the small dimension of the diode structures and the resulting high spatial resolution.
  • Figures 1 to 5 is a schematic sectional view through a semiconductor substrate in various manufacturing process steps
  • FIG. 6 shows a partial section of such a semiconductor carrier after a later process step
  • FIG. 7 shows an electrical measuring circuit
  • FIG. 8 is a plan view of a schematically illustrated sensor arrangement based on a
  • FIGS. 9 and 9B show a structure of a measuring circuit modified with respect to FIG. 7;
  • Figure 9A is a plan view of the contacting of
  • FIG. 10 shows a further, modified embodiment of a measuring circuit
  • Figure 12 shows a contrast modified embodiment with separately formed insulation elements, as well as a further modified Ausiatingungsform a sensor circuit
  • Figure 13 is a schematic to 15 sectional view of another Ausiatingungsform in various production process steps and
  • Figure 16 is a plan view of this modified Ausilickungsform.
  • a semiconductor carrier 1 preferably made of p-doped (100) silicon.
  • diode structures 2, 3 are formed by means of standard semiconductor processes, implantation or diffusion.
  • n-zone 2 a p-region 3 is introduced. These are localized on the one hand in the area 6 of the thermally insulating tub 4 and next in the bulk area 7, FIGS. 2-5.
  • the area 4 is only generated in a later process step, it is shown in FIG. 2 only for better clarification.
  • the diode 7 is used to measure the temperature reference, the chip temperature, while the diode 5 serves as a temperature sensor and the diode 6 as a heater.
  • the diodes 5 and 6 can also be realized in an n-well (cf., FIG. 10).
  • thermal oxidation 8 (FIGS. 3 to 8) and structuring of the oxide take place.
  • the oxide atom essentially serves to protect the pn junction. It is preferably formed during the diffusion step of the implanted (diode) structures.
  • a masking layer 9 is applied and patterned for the following porous silicon process step.
  • This layer is used to define the Ches the thermal insulation well 4 and to protect the thermal oxide layer 8 over the pn junctions of the diode structures.
  • Suitable masking layers 9 are layers which have a low etch rate in hydrofluoric acid, in particular SiN, Si 3 N 4, SiC.
  • the layer thicknesses are typically in the range of 10 to 200 nanometers. However, this mask can also be done with the aid of a local n-doping.
  • the thermal insulation trough 4 is generated (FIG. 4).
  • the silicon is porosified in the tub area. This is done by electrochemical etching in a hydrofluoric acid (HF) electrolyte.
  • HF hydrofluoric acid
  • a wetting agent is added, this is preferably isopropanol, ethanol or a surfactant.
  • the concentration here may be in the range between 10% and 50% HF.
  • the invention utilizes the extreme doping selectivity of the porous silicon process.
  • the diode structures introduced in the preceding process step are realized via n-wells (FIGS. 1 to 2) with p-regions (FIGS. 1 to 3).
  • the outer n-well is not attacked by the electrochemical process, since holes (holes) are necessary for the dissolution process of silicon, which are available in p-type silicon in sufficient form, but not in n-Si. Therefore, the functional structures are inert to the porous silicon process step.
  • nanoporous, mesoporous or macroporous structures can be realized.
  • nano- and mesoporous silicon is used.
  • macroporous silicon can also be advantageous.
  • Nanoporous silicon can preferably be produced at substrate doping below 10 17 / cm 3 and HF concentrations above 30%.
  • Mesoporous silicon is obtained at substrate doping above 10 17 / cm 3 and HF concentrations in the range of 10% - 40%.
  • the porosity should be greater than 50% as far as possible.
  • thermal conductivity values in the range 0.1-0.8 W / mK can be achieved with this process (BuIk-Si: 156 W / mK).
  • porosities in the range 50% - 70% are advantageous.
  • the best features in terms of combination of high mechanical stability and good thermal insulation are given by nanoporous silicon. This modification also has extremely isotropic properties, which is advantageous for a fast thermal sensor.
  • the depth of the insulation well 4 is preferably in the range of a few 10 ⁇ m to 100 ⁇ m, depending on the etching rate, times between 5 minutes and 20 minutes are necessary for this. Since the etching process is very isotropic, the inert diode structures are thus completely undercut as indicated in FIG. 4 and are subsequently embedded in porous material.
  • the isotropy of the etching process also leads to undercutting of the mask (sketched in FIG. 4), but this can be taken into account in the design of the membrane.
  • an oxidation step may subsequently be carried out in order to stabilize the layer and further reduce the thermal conductivity by partial oxidation.
  • This is particularly advantageous in the case of mesoporous silicon.
  • the degree of oxidation is preferably 10% - 30%.
  • the pn junctions are not affected by this oxidation step, since the oxidation of porous silicon due to its high internal surface only temperatures in the range of 400 ° C are required.
  • the etching mask 9 is then removed. It should be noted that the etching mask is to be etched selectively with respect to the thermal oxide layer 8. This can be either wet-chemically, e.g. hot phosphoric acid using Si3N4 / SiN, or done physically. In the case of a physical erosion, however, one obtains a step in the tub area, furthermore, it must be ensured that, after erosion, there is still thermal oxide over the pn junctions. Therefore, a wet chemical process is generally preferable.
  • the etching mask can also be left on the structure. This increases an additional level by a few 10 nanometers. At the same time, the process management is greatly facilitated if the etch mask is not removed.
  • connection contacts 11 of the diode structures are patterned.
  • the electrical connections are made by means of a metal plane
  • an electrode structure preferably a Pt interdigital structure
  • PECVD oxide dielectric closure layer
  • FETs and further components required can be structured by means of suitable implantation before the porosification of the thermal insulation well.
  • CMOS processing is recommended.
  • the active structures, FETs, possibly diodes, resistors, are realized here in an n-doped epitaxial layer. This protects the active elements in the subsequent porosification step. Extended p-sinkers allow the porosification of the surrounding and underlying membrane area.
  • the gate areas can be exposed and functional layer stacks processed.
  • This functionalization includes, besides thermal treatments, oxidation, nitriding, also deposition of active materials, e.g. Oxides, oxynitrides, suicides, nitrides or catalytic metals, e.g. Pt, Pd, Rh, Ir, Au to aid adsorbate dissociation. Sandwich structures and porous or structured metallizations are also conceivable here.
  • the sealing layer of the porous silicon and electrical contacting can be carried out as described above for the thermal sensors.
  • the diodes for temperature measurement are operated in the constant current mode (FIG. 7).
  • a current source imprints a constant operating current I F of typically several 10 ⁇ A.
  • I F constant operating current
  • an air mass sensor is still a Heating element provided to realize a certain over-temperature and a temperature profile above the membrane. This is also ideally done by a diode.
  • FIG. 8 shows a plan view of the diodes for use as a mass flow sensor in plan view.
  • the element G is not needed for this purpose, it is shown for illustrative purposes only.
  • diode D5 is used on the substrate 1.
  • the flow direction of the medium to be sensed, e.g. Air, is indicated by the arrow 14.
  • the other sensor structures are realized by means of diodes Dl - D4 in the tub 4.
  • the diodes Dl and D4 are used for temperature measurement, while the diodes D2 and D3 act as heater diodes.
  • the regulation now takes place by setting a constant excess temperature from Dl to D5 by means of D2 and from D4 to D5 by means of D3.
  • a second tap directly at the anode the voltage can be measured almost currentless.
  • the voltage drop on leads and contacts is therefore close to zero.
  • the accuracy of the method can thus be significantly increased.
  • this also increases the number of connections required, eg bond pads.
  • the measuring diode 16 and the heating diode 15 in a common n-well can be realized.
  • the advantage of this modification is a better thermal coupling of measuring and heater diode.
  • a barrier 17 is introduced in order to prevent electrical coupling of the measuring and heating diode.
  • a further advantageous modification is the implementation by means of transistors.
  • the transistors for measuring the temperature are in this case constructed in the form of a so-called "bandgap reference" circuit, whereby a highly accurate temperature measurement is possible.
  • the difference between the base emitter voltage of two similar transistors A and B is used. This is temperature dependent and turns to:
  • transistors offer advantages in heating. They allow a higher power loss than diodes with the same heater current.
  • the U F (T) characteristic can also be stored in a map. This is useful if non-linearities occur due to the structure.
  • FIGS. 11 and 12 Possible areal arrangements of the diode structures for location-dependent sensing are shown in FIGS. 11 and 12.
  • Fig. 11 shows an arrangement in a common thermal insulation pan.
  • Fig. 12 shows an arrangement in isolated individual well regions. In the case of FIG. 12, the individual units are thermally decoupled.
  • the diode structures can be heaters, temperature sensors or a combination of heater and sensor.
  • FIGS. 13 to 16 show a further optimized embodiment of a sensor with regard to thermal decoupling of individual sensor elements. To illustrate the process, only the environment of a single sensor is shown in FIGS. 13 to 15. The plan view of Figure 16 shows an embodiment in which a group of sensors is summarized accordingly.
  • FIG. 13 shows in detail the substrate 1, in which a porous silicon previously described as a thermal insulation element 4 is embedded in a trough-shaped manner and in turn, the respective sensor element also receives embedded in itself.
  • FIG. 14 shows a carrier layer or membrane 18 applied over the arrangement from FIG. 13 with two openings 20 formed therein. Through these openings 20, for example by means of an etching process, the porous silicon formed underneath, as shown in FIG Decoupling of the relevant sensor element can be removed.
  • the thermal decoupling of the sensor element from the substrate via the support layer or membrane 18 can also be influenced significantly positively by the use of a thermally highly insulating material for the formation of the membrane.
  • the respective sensor element is framed by way of example in the form of approximately rectangular, longitudinal recesses.
  • the mechanically supporting connection is realized via the individual corner points of the remaining membrane surfaces over which e.g. also the corresponding connections of the sensor elements can be performed.

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Analytical Chemistry (AREA)
  • Electrochemistry (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Biochemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Investigating Or Analyzing Materials By The Use Of Electric Means (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Measuring Volume Flow (AREA)

Abstract

La présente invention concerne un capteur, en particulier un capteur thermique et/ou à gaz, comportant un composant (5) de capteur électrique avec une propriété électrique faisant varier sa valeur en fonction de la température, caractérisé en ce que la propriété électrique dépendant de la température est une résistance ou une impédance (5). Le découplage thermique et électrique de la structure active du substrat est obtenu par du silicium poreux et/ou une cavité creusée par électropolissage.
PCT/EP2006/063152 2005-07-06 2006-06-13 Capteur Ceased WO2007054380A1 (fr)

Priority Applications (2)

Application Number Priority Date Filing Date Title
EP06841252.7A EP1902282B1 (fr) 2005-07-06 2006-06-13 Capteur
US11/921,669 US8007169B2 (en) 2005-07-06 2006-06-13 Sensor

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102005031604A DE102005031604A1 (de) 2005-07-06 2005-07-06 Sensor
DE102005031604.2 2005-07-06

Publications (1)

Publication Number Publication Date
WO2007054380A1 true WO2007054380A1 (fr) 2007-05-18

Family

ID=36968941

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/EP2006/063152 Ceased WO2007054380A1 (fr) 2005-07-06 2006-06-13 Capteur

Country Status (4)

Country Link
US (1) US8007169B2 (fr)
EP (1) EP1902282B1 (fr)
DE (1) DE102005031604A1 (fr)
WO (1) WO2007054380A1 (fr)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7997791B2 (en) * 2007-07-24 2011-08-16 Qimonda Ag Temperature sensor, integrated circuit, memory module, and method of collecting temperature treatment data
DE102009053127A1 (de) * 2009-11-13 2011-05-19 Staxera Gmbh Verfahren zum Messen von Gaseigenschaften in einer Brennstoffzellenanordnung und Brennstoffzellenanordnung
DE102011006332A1 (de) * 2011-03-29 2012-10-04 Robert Bosch Gmbh Verfahren zum Erzeugen von monokristallinen Piezowiderständen
US9022644B1 (en) 2011-09-09 2015-05-05 Sitime Corporation Micromachined thermistor and temperature measurement circuitry, and method of manufacturing and operating same
DE102012201304A1 (de) * 2012-01-31 2013-08-01 Robert Bosch Gmbh Mikromechanische Feststoffelektrolyt-Sensorvorrichtung und entsprechendes Herstellungsverfahren
ITTO20120145A1 (it) * 2012-02-17 2013-08-18 St Microelectronics Srl Trasduttore integrato provvisto di un sensore di temperatura, e metodo per rilevare una temperatura di tale trasduttore
US9170165B2 (en) 2013-03-25 2015-10-27 Globalfoundries U.S. 2 Llc Workfunction modulation-based sensor to measure pressure and temperature
US20170205366A1 (en) * 2014-05-21 2017-07-20 Todos Technologies Ltd Gas sensing device and a method for sensing gas
US9459224B1 (en) * 2015-06-30 2016-10-04 Taiwan Semiconductor Manufacturing Co., Ltd. Gas sensor, integrated circuit device using the same, and manufacturing method thereof
GB2558896B (en) 2017-01-17 2019-10-09 Cambridge Entpr Ltd A single membane flow-pressure sensing device
GB2558895B (en) * 2017-01-17 2019-10-09 Cambridge Entpr Ltd A thermal fluid flow sensor
RU2661611C1 (ru) * 2017-12-06 2018-07-17 федеральное государственное автономное образовательное учреждение высшего образования "Национальный исследовательский ядерный университет МИФИ" (НИЯУ МИФИ) Способ создания сенсорного элемента на основе микрорезонатора из пористого кремния для детекции паров взрывчатых веществ
DE102018207689B4 (de) * 2018-05-17 2021-09-23 Robert Bosch Gmbh Verfahren zum Herstellen mindestens einer Membrananordnung, Membrananordnung für einen mikromechanischen Sensor und Bauteil

Citations (2)

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Publication number Priority date Publication date Assignee Title
US5600174A (en) 1994-10-11 1997-02-04 The Board Of Trustees Of The Leeland Stanford Junior University Suspended single crystal silicon structures and method of making same
DE10219247A1 (de) 2002-04-30 2003-12-18 Bosch Gmbh Robert Temperatursensor und Verfahren zu dessen Herstellung

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DE19845112C2 (de) * 1998-09-30 2000-12-21 Tyco Electronics Logistics Ag Gassensor
US6759265B2 (en) * 2001-12-12 2004-07-06 Robert Bosch Gmbh Method for producing diaphragm sensor unit and diaphragm sensor unit
DE102004024285B4 (de) 2004-05-15 2014-05-15 Robert Bosch Gmbh Verfahren zur Herstellung eines mikrostrukturierten Bauelements

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US5600174A (en) 1994-10-11 1997-02-04 The Board Of Trustees Of The Leeland Stanford Junior University Suspended single crystal silicon structures and method of making same
DE10219247A1 (de) 2002-04-30 2003-12-18 Bosch Gmbh Robert Temperatursensor und Verfahren zu dessen Herstellung

Non-Patent Citations (1)

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Title
NASSIOPOULOU A G ET AL: "POROUS SILICON AS AN EFFECTIVE MATERIAL FOR THERMAL ISOLATION ON BULK CRYSTALLINE SILICON", PHYSICA STATUS SOLIDI (A). APPLIED RESEARCH, BERLIN, DE, vol. 182, no. 1, 12 March 2000 (2000-03-12), pages 307 - 311, XP008001587, ISSN: 0031-8965 *

Also Published As

Publication number Publication date
EP1902282A1 (fr) 2008-03-26
DE102005031604A1 (de) 2007-01-11
EP1902282B1 (fr) 2018-02-28
US20090129440A1 (en) 2009-05-21
US8007169B2 (en) 2011-08-30

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