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WO2006030561A1 - Appareil de traitement de substrat - Google Patents

Appareil de traitement de substrat Download PDF

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Publication number
WO2006030561A1
WO2006030561A1 PCT/JP2005/009332 JP2005009332W WO2006030561A1 WO 2006030561 A1 WO2006030561 A1 WO 2006030561A1 JP 2005009332 W JP2005009332 W JP 2005009332W WO 2006030561 A1 WO2006030561 A1 WO 2006030561A1
Authority
WO
WIPO (PCT)
Prior art keywords
substrate
base
substrate support
top plate
groove
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2005/009332
Other languages
English (en)
Japanese (ja)
Inventor
Yoshikazu Iida
Masayuki Husano
Makoto Kobayashi
Eietsu Soneta
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
SES Co Ltd
Original Assignee
SES Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by SES Co Ltd filed Critical SES Co Ltd
Priority to US11/661,654 priority Critical patent/US20080264457A1/en
Publication of WO2006030561A1 publication Critical patent/WO2006030561A1/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67075—Apparatus for fluid treatment for etching for wet etching
    • H01L21/6708—Apparatus for fluid treatment for etching for wet etching using mainly spraying means, e.g. nozzles
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/68—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for positioning, orientation or alignment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H01L21/67051—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles

Definitions

  • the present invention relates to a substrate processing apparatus for performing surface treatment of various substrates such as a semiconductor wafer, a substrate for a liquid crystal display device, a substrate for a recording disk, or a substrate for a mask, and in particular, mounts a substrate to be processed.
  • the present invention relates to a substrate processing apparatus having an improved support.
  • Substrate processing apparatuses that perform surface treatment of various substrates such as semiconductor wafers, liquid crystal display substrates, recording disk substrates, and mask substrates are two different systems, so-called batch type and single wafer type. Is roughly divided into substrate processing apparatuses employing the above.
  • the notch type substrate processing apparatus sets a large number of substrates to be processed, for example, semiconductor wafers (hereinafter collectively referred to as wafers) in a cassette, and the cassette is stored in a processing tank. It is an apparatus that treats these wafers in a lump by immersing them in a treatment solution, and has the advantage that a large amount of wafers can be treated at once.
  • wafers semiconductor wafers
  • a single wafer processing substrate processing apparatus places one wafer on the mounting table, and while rotating the mounting table, drops the processing liquid onto the wafer surface to process one wafer at a time. Since the wafers are processed one by one, cross-contamination between multiple wafers can be avoided, and the amount of processing liquid that uses force is relatively small. .
  • FIG. 4 is a cross-sectional view showing a substrate support of a substrate processing apparatus described in Patent Document 1 below.
  • the substrate support 100 includes a bowl-shaped lower portion 102 and a rotationally symmetric upper portion. And a space 101 for discharging gas (annular nozzle) 103 is formed between them.
  • the annular nozzle 103 is formed between the boundary wall formed by the upper portion 101 and the lower portion 102 so as to have an acute angle with respect to the upper end surface of the substrate support 100.
  • the gas supplied to the annular nozzle 103 is supplied through a hollow shaft 104 and a plurality of radial holes 105 from a gas supply source (not shown), and this gas supply causes the substrate W to be processed. At the time of cleaning, the cleaning liquid dropped on the surface of the substrate W to be processed should not go into the non-cleaning surface on the back side.
  • FIG. 5 is a cross-sectional view showing a substrate support described in Patent Document 2 below. Since this apparatus has substantially the same configuration as that of the substrate support 100, common portions are denoted by the same reference numerals and description thereof is omitted.
  • the substrate support 100 ′ has a gap ring 106 formed between the upper part 101 and the lower part 102 with a gap ring 106 interposed between the upper part 101 and the lower part 102, that is, an annular nozzle 103. Adjustable.
  • the cleaning liquid dropped on the surface of the substrate W can be adjusted so as not to go around the back surface when the substrate W is cleaned.
  • Patent Document 1 Japanese Patent Publication No. 5-14791 (see Figure 1, page 4, right column, line 18 to page 5, left column, line 22)
  • Patent Document 2 Japanese Patent Publication No. 11 515139 (see Fig. 3, page 9, lines 10-25) Disclosure of the Invention
  • the gap between the annular nozzles described in Patent Documents 1 and 2 is important for preventing the cleaning liquid dripped on the surface of the substrate W from flowing into the back surface when cleaning the substrate W to be processed.
  • the substrate support described in Patent Document 2 is provided with a gap adjusting means, and the gap interval can be adjusted by this adjusting means, but a special member is required as the adjusting means. Moreover, adjustment work is not easy even with such an adjustment means.
  • substrates to be processed for example, semiconductor wafers
  • substrates to be processed have become larger in diameter.
  • a substrate having a diameter of 300 mm or more is handled, higher quality processing is required.
  • the present invention has been made to solve the above-described problems of the prior art, and an object of the present invention is to provide a substrate support body that does not require adjustment of the blowing nozzle during assembly and simplifies the assembly work. Is to provide a substrate processing apparatus.
  • a substrate to be processed is placed on a substrate support, and a processing liquid is dropped onto the substrate surface while rotating the substrate support.
  • a processing liquid is dropped onto the substrate surface while rotating the substrate support.
  • the substrate support includes a base having a circular deep dish shape, a disk-like shape as a whole, and a top plate fitted in an upper opening of the base with a longitudinal cross section thereof being an inverted trapezoidal shape.
  • a rotating shaft provided at the center of rotation of the table or the top plate, and at least one surface selected from the contact surface of the top plate and the contact surface of the upper opening of the base plate that are brought into contact with each other by the fitting Is characterized in that a gas blowing nozzle is formed which also has a plurality of slit-like groove forces extending radially by the hollow rotating axial force directed outward.
  • the slit-like groove is preferably formed of any one of a concave groove, a semicircular groove, and a square groove having a predetermined width and depth. .
  • the slit-like groove has a first width or depth different from each other.
  • the second grooves are formed, and the first and second grooves are alternately arranged.
  • the substrate support is a substrate support pin having a predetermined height on a mounting surface of the substrate to be processed of the base. Is preferred.
  • the present invention has the following effects. That is, the gas blowing nozzle is composed of a slit-like groove provided on at least one surface selected from the contact surface of the top plate and the contact surface of the upper opening of the base, so that the top plate is fitted into the opening of the base. Therefore, a gas lead-out path can be formed. Therefore, unlike the prior art, it is not necessary to form a gap in the state where the top plate is fitted into the opening of the base and the top plate is separated from the opening within the opening and opposed to each other, and a support mechanism is not required. As a result, the assembly work of the substrate support becomes extremely simple.
  • the gas blowing amount of the gas blowing nozzle force is determined by the shape of the slit groove, it is not necessary to adjust the gap as in the prior art, and the blowing amount can be made constant and uniform.
  • the processing liquid does not wrap around the non-processed substrate surface (back surface). Further, by changing the number and shape of the grooves, it is possible to change the blowout amount according to various processing specifications of the substrate to be processed.
  • the gas blowing nozzle is formed by a slit-like groove, the nozzle can be formed extremely easily.
  • the slit-shaped groove by any one of a concave groove, a semicircular groove, and a square groove having a predetermined width and depth, the groove can be formed. Since it is easy to perform, the formation of the blowout nozzle becomes extremely simple.
  • the gas blowing amount is determined by the shape of these slit-shaped grooves, the processing according to various processing specifications of the substrate to be processed can be made possible by changing the number and shape.
  • a predetermined height is placed on the mounting surface of the substrate to be processed.
  • the gap between the mounting surface and the substrate to be processed can be uniformly maintained. Therefore, the uniform gap can be used to supply a uniform gas to the substrate to be processed, and the non-processed surface of the substrate to be processed can be efficiently protected.
  • the substrate to be processed falls on the mounting surface, sticks to this surface, and does not leave even if the gas supply is started again. It cannot be processed, and if it is forcibly removed, the substrate to be processed may be damaged.
  • a gap is always formed between the substrate to be processed and the mounting surface, and such inconvenience can be solved.
  • FIG. 1 is a sectional view showing a substrate processing apparatus according to an embodiment of the present invention.
  • FIG. 2 Shows the structure of the top plate
  • Fig. 2A is a side view
  • Fig. 2B is an enlarged view of the main part showing the enlarged groove part of Fig. 2A
  • Fig. 2C is the main part of Fig. 2B cut along the IIC IIC line force. Sectional view,
  • FIG. 4 is a cross-sectional view showing a prior art substrate support
  • FIG. 5 is a cross-sectional view showing a conventional substrate support.
  • FIG. 1 is a cross-sectional view showing a substrate processing apparatus according to an embodiment of the present invention.
  • the substrate processing apparatus 1 includes a substrate support (hereinafter referred to as a support) 2 having a blow nozzle 14 that supports various substrates to be processed, such as wafers W, and has a blow-out port for blowing gas, and the support 2.
  • a driving means 20 for rotating and an injection nozzle 23 for dropping the processing liquid onto the surface of the wafer W are provided, and the support 2 and the injection nozzle 23 are configured to be accommodated in the processing cup 30.
  • the spray nozzle 23 is connected to a processing liquid supply device 25 installed outside the processing cup 30 by a pipe 24 so that a predetermined processing liquid can be supplied.
  • a multi-stage cup 32 that can move up and down is provided at the top of the processing cup 30, and a discharge port 31 for discharging the used processing liquid is provided at the bottom of the processing cup 30.
  • the discharge port 31 is connected to a drainage treatment apparatus (not shown) by piping.
  • the support 2 includes a base 3 having a circular deep dish shape, and a top plate 10 that has a disk shape as a whole and whose longitudinal cross section has a substantially inverted trapezoidal shape.
  • the top plate 10 is fitted in the upper opening 5, and the outer peripheral surface of the top plate 10 and the opening 5 is a mounting surface for the wafer W.
  • the upper outer edge of the base 3 is a flat surface 4.
  • a substrate support pin 8 that is formed and the wafer W is placed on the flat surface 4 and a movement restricting pin 9 that prevents the wafer W from moving in the horizontal direction while rotating are outside the wafer W. It is provided so as to contact the periphery.
  • Providing the substrate support pins 8 makes it difficult for the woofer W to stick to the mounting surface. Can be prevented. In other words, if the gas supply is stopped during the processing of the substrate to be processed, for example, the wafer falls on the mounting surface, sticks to this surface, and even if the gas supply is started again, it cannot be separated. A force that can damage the substrate to be processed if it cannot be processed and if it is forcibly removed, providing this support pin creates a gap between Ueno, W and the mounting surface. Therefore, such inconvenience can be solved.
  • the substrate support pin 8 and the movement restricting pin 9 are separate forces.
  • the support pin 8 and the movement restricting pin 9 may be a single pin, for example, a pin having a stepped portion with a low height.
  • the base 3 has a concave recess 6 having an opening and a depth of a predetermined size at the bottom, and a predetermined angle, for example, a range of 10 degrees to 45 degrees, from the concave recess 6 toward the upper opening.
  • An inclined surface 5a inclined at an inner angle ⁇ is formed. This angle ⁇ is preferably 12 degrees.
  • a through hole 7 that penetrates downward is formed at the center of the concave recess 6.
  • FIG. 2 shows the configuration of the top plate
  • Fig. 2A is a side view
  • Fig. 2B is an enlarged view of the main part showing the groove portion of Fig. 2A in an enlarged manner
  • Fig. 2C is cut by the IIC IIC line force of Fig. 2B.
  • FIG. 3 is an enlarged plan view showing the rear surface of the top board.
  • the top plate 10 has a disk shape with a predetermined thickness as a whole, and is configured by a plate body whose longitudinal section has an approximately inverted trapezoidal shape. As shown in FIG. 2, this inverted trapezoidal shape comprises a short bottom surface 12, a relatively long top surface 11, and an inclined surface 13 connecting the bottom surface 12 and the top surface 11, and is formed in a concave recess 6 of the base 3. The short bottom surface 12 is fitted so that the top surface 11 is located at a position parallel to the flat surface 4.
  • the area of the lower surface 12 is almost the same as the upper opening of the concave recess 6 of the base 3, and the center of the lower surface (this portion is the center of the disk-shaped top plate)
  • a recess 12 ' is formed to insert and fix the end.
  • this dent 12 ' is a concave shape that does not penetrate the top plate 10 It is a depression.
  • the upper surface 11 has a flat surface, and the wafer W is placed without contacting the flat surface. Further, the inclined surface 13 is formed to be inclined from the lower surface 12 upward by a predetermined angle ⁇ . Incidentally, this angle is the same as the angle ⁇ of the inclined portion 5a of the base 3 described above.
  • a plurality of concave grooves 14 are radially formed at an equal angle ⁇ ′ from the center point of the top plate 10 toward the outer peripheral portion. Is done.
  • the number of grooves is 360.
  • the groove depth H is changed every other groove, that is, the deep grooves H and the shallow grooves H are provided alternately.
  • the deep groove H is 0.5 mm, for example, and the shallow groove H is 0.3, for example.
  • the groove shape is not limited to the concave groove, but may be changed to other shapes, for example, a rectangular shape, a semicircular shape, and the like, and may be combined with the width, depth, angle, and number.
  • a similar groove may be provided on the inclined surface 5a of the force base 3 provided with the concave groove on the top plate 10.
  • the concave groove may be provided on both the top plate 10 and the base 3.
  • the rotating shaft 15 also has a hollow cylindrical body force, and a plurality of holes 16 for ejecting gas to the outer peripheral surface of the cylindrical body are formed at the end of the portion coupled to the top plate 10.
  • the rotating shaft 15 is inserted into the through hole 7 of the base 3, and its end is inserted into the concave recess 12 ′ at the center of the top plate 10. Then, after inserting into the through hole 7 and inserting into the concave recess 12 ', a predetermined fixing means is attached.
  • the top plate 10 and the base 3 are fixed to the body on the rotating shaft 15.
  • the rotating shaft 15 fixed to the base 3 is connected to a driving means 20, for example, a motor, by a power transmission means 22, for example, a belt, with a pulley 21 or the like attached below the base 3. Then, the support 2 is rotated by the power from the drive means 20 to rotate the support 2 at a predetermined rotational speed.
  • the rotary shaft 15 is supplied with gas, for example, compressed air or nitrogen gas, through the inside thereof, and is supplied to the space from the hole 16 at the end.
  • gas for example, compressed air or nitrogen gas
  • one sheet W is placed on the support pin 8 of the support 2 using a transport mechanism (not shown).
  • the support 2 is rotated via the rotating shaft 15, and the cleaning liquid is dropped on the upper surface of the wafer W rotating from the injection nozzle 23.
  • the spray nozzle 23 is reciprocated linearly in the radial direction of the roof W by a moving means (not shown) or in a circular arc passing through the center of the roof W to spray the processing liquid.
  • the cleaning liquid dripped onto the surface of the woow flows in the outer circumferential direction on the woofer W by centrifugal force and is blown off from the outer rim of the woofer W.
  • This woo W is a force to move laterally during rotation. This movement is blocked by the restriction pin 9.
  • the gas is blown in the direction of the force toward the outer periphery of the central force of the wafer W, preventing the cleaning liquid from entering the rear surface of the wafer W and contaminating the non-cleaning surface (back surface) with the cleaning liquid after use There is no.
  • the support body 2 is disposed in the processing cup 30, and a multi-stage cup 32 that can move up and down is disposed at a position close to the outer peripheral edge of the flat surface 4 of the support body 2.
  • the processing liquid supplied from 23 is collected.
  • supply from the injection nozzle 23 The multi-stage cup 32 is moved up and down by a driving means (not shown) according to the type of treatment liquid to be collected, and the treatment liquid is collected by a collection unit (not shown) connected to each stage of the multi-stage cup 32 for each treatment liquid. Is going to be done.
  • the discharge port 31 discharges unnecessary liquid from the processing cup 30 during maintenance or trouble.

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Weting (AREA)

Abstract

L’invention porte sur un appareil de traitement de substrat (1) capable de réaliser le traitement de surface d’un substrat traité (W) en disposant le substrat traité sur un corps de support de substrat (2) et en laissant égoutter un liquide de traitement à la surface du substrat tout en faisant tourner le corps de support de substrat (2). Le corps de support de substrat (2) comprend une base en forme de casserole circulaire (3), une plaque supérieure (10) généralement en forme de disque, avec une section transversale longitudinale en forme de trapèze inverse, et posée sur l’ouverture supérieure de la base, et un arbre rotatif creux (15) posé sur la base (3) ou la plaque supérieure (10) en son axe de rotation. L’appareil est caractérisé en ce qu’une buse d’aspersion de gaz (14) comprenant une pluralité de rainures en forme de fente s’étendant radialement depuis l’arbre rotatif creux (15) vers l’extérieur est formée dans au moins une surface sélectionnée parmi la surface de contact (13) de la plaque supérieure (10) et la surface de contact de l’ouverture supérieure (5a) de la base (3) amenées au contact l’une de l’autre par le raccord. Ainsi, l’appareil de traitement de substrat ayant le corps de support de substrat peut être assemblé facilement en supprimant le besoin d’ajuster la buse d’aspersion de gaz lors du montage.
PCT/JP2005/009332 2004-09-16 2005-05-23 Appareil de traitement de substrat Ceased WO2006030561A1 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
US11/661,654 US20080264457A1 (en) 2004-09-16 2005-05-23 Substrate Treatment Apparatus

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2004270578A JP2006086384A (ja) 2004-09-16 2004-09-16 基板処理装置
JP2004-270578 2004-09-16

Publications (1)

Publication Number Publication Date
WO2006030561A1 true WO2006030561A1 (fr) 2006-03-23

Family

ID=36059822

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2005/009332 Ceased WO2006030561A1 (fr) 2004-09-16 2005-05-23 Appareil de traitement de substrat

Country Status (6)

Country Link
US (1) US20080264457A1 (fr)
JP (1) JP2006086384A (fr)
KR (1) KR20070058466A (fr)
CN (1) CN100481368C (fr)
TW (1) TW200616138A (fr)
WO (1) WO2006030561A1 (fr)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5084639B2 (ja) * 2008-06-30 2012-11-28 芝浦メカトロニクス株式会社 スピン処理装置
DE202010015018U1 (de) * 2010-11-07 2011-04-14 Bohnet, Hans Anordnung zur Herstellung von strukturierten Substraten
CN102650054B (zh) * 2011-02-28 2014-01-15 深南电路有限公司 一种覆铜板板边毛刺的去除方法
JP2013175544A (ja) * 2012-02-24 2013-09-05 Disco Abrasive Syst Ltd 保持テーブル
KR101504880B1 (ko) * 2014-11-14 2015-03-20 주식회사 기가레인 기판 안착유닛
CN109087870A (zh) * 2018-07-13 2018-12-25 上海华力集成电路制造有限公司 硅片清洗装置及其清洗方法

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02303047A (ja) * 1989-05-18 1990-12-17 Shioya Seisakusho:Kk ウエハチヤツク方法及び装置
JPH077070A (ja) * 1993-02-08 1995-01-10 Sez Semiconduct Equip Zubehoer Fuer Halbleiterfertigung Gmbh ディスク状の物体用の支持体
JPH09232206A (ja) * 1996-02-22 1997-09-05 Hitachi Ltd 塗布装置

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5198034A (en) * 1987-03-31 1993-03-30 Epsilon Technology, Inc. Rotatable substrate supporting mechanism with temperature sensing device for use in chemical vapor deposition equipment
AT389959B (de) * 1987-11-09 1990-02-26 Sez Semiconduct Equip Zubehoer Vorrichtung zum aetzen von scheibenfoermigen gegenstaenden, insbesondere von siliziumscheiben
US5513688A (en) * 1992-12-07 1996-05-07 Rheo-Technology, Ltd. Method for the production of dispersion strengthened metal matrix composites

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02303047A (ja) * 1989-05-18 1990-12-17 Shioya Seisakusho:Kk ウエハチヤツク方法及び装置
JPH077070A (ja) * 1993-02-08 1995-01-10 Sez Semiconduct Equip Zubehoer Fuer Halbleiterfertigung Gmbh ディスク状の物体用の支持体
JPH09232206A (ja) * 1996-02-22 1997-09-05 Hitachi Ltd 塗布装置

Also Published As

Publication number Publication date
US20080264457A1 (en) 2008-10-30
CN101015049A (zh) 2007-08-08
TW200616138A (en) 2006-05-16
KR20070058466A (ko) 2007-06-08
CN100481368C (zh) 2009-04-22
JP2006086384A (ja) 2006-03-30

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