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WO2006028173A1 - Appareil d’enduction/de developpement, appareil d’exposition et procede de formation de motif de resist - Google Patents

Appareil d’enduction/de developpement, appareil d’exposition et procede de formation de motif de resist Download PDF

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Publication number
WO2006028173A1
WO2006028173A1 PCT/JP2005/016523 JP2005016523W WO2006028173A1 WO 2006028173 A1 WO2006028173 A1 WO 2006028173A1 JP 2005016523 W JP2005016523 W JP 2005016523W WO 2006028173 A1 WO2006028173 A1 WO 2006028173A1
Authority
WO
WIPO (PCT)
Prior art keywords
cleaning liquid
semiconductor wafer
wafer
cleaning
unit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2005/016523
Other languages
English (en)
Japanese (ja)
Inventor
Taro Yamamoto
Osamu Hirakawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokyo Electron Ltd
Original Assignee
Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Publication of WO2006028173A1 publication Critical patent/WO2006028173A1/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691—Handling of masks or workpieces
    • G03F7/70733—Handling masks and workpieces, e.g. exchange of workpiece or mask, transport of workpiece or mask
    • G03F7/7075—Handling workpieces outside exposure position, e.g. SMIF box
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70341—Details of immersion lithography aspects, e.g. exposure media or control of immersion liquid supply
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H01L21/67051—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
    • H01L21/67161—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the layout of the process chambers
    • H01L21/67178—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the layout of the process chambers vertical arrangement
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
    • H01L21/67207—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process
    • H01L21/67225—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process comprising at least one lithography chamber

Definitions

  • the present invention relates to a coating / developing apparatus including a coating unit that coats a resist on the surface of a semiconductor wafer and a developing unit that supplies a developing solution to the semiconductor wafer that has been exposed by the exposure apparatus and develops the semiconductor wafer.
  • the present invention relates to an exposure apparatus that performs exposure on a semiconductor wafer, and more particularly, to a technique for cleaning a peripheral portion of a wafer after exposure.
  • the exposure apparatus is an immersion exposure apparatus that performs exposure by forming a liquid layer on the surface of the semiconductor wafer.
  • a resist is applied to the surface of a semiconductor wafer (hereinafter simply referred to as “Ueno”), and this resist is applied to a predetermined pattern.
  • the resist pattern is formed by developing after exposure with an adhesive.
  • Such a process is generally performed using a system in which an exposure apparatus is connected to an apparatus for applying and developing a resist.
  • Immersion exposure is a technology that uses light that has passed through a liquid, for example, ultrapure water, to take advantage of the fact that the wavelength of ArF at 193 nm is substantially 134 nm in water because the wavelength is shorter in water. It is something.
  • the exposure means 1 is arranged with a gap from the surface of the wafer W.
  • a lens 10 is provided at the front end of the center of the exposure means 1, and a supply port for supplying a liquid, for example, pure water, for forming a liquid layer on the surface of the wafer W outside the lens 10.
  • 11 and a suction port 12 for sucking and collecting pure water supplied to the wafer w are provided.
  • a liquid film pure water film
  • the Light source power light (not shown) is emitted, and the light passes through the lens 10, passes through the liquid film, and is irradiated onto the wafer W, whereby a predetermined circuit pattern is transferred to the resist.
  • the exposure means 1 is moved in the lateral direction to move to the next transfer area (shot area).
  • the exposure means 1 is placed at a position corresponding to 13 and irradiated with light. By repeating this, a predetermined circuit pattern is sequentially transferred onto the surface of the wafer W.
  • the shot area 13 is shown larger than the actual area.
  • the temperature of the part where the particles adhere is different from the temperature of other parts, so that the acid catalyst generated during exposure to the chemically amplified resist is contained in the resist.
  • the adhesion of particles affects the line width of the pattern. Further development At the time of processing, the pattern may be damaged by particles adhering to Ueno and W.
  • a water-repellent protective film is applied to the surface of the wafer W before immersion exposure.
  • a protective film prevents the liquid used during immersion exposure from remaining on the surface of the wafer W.
  • a protective film is preferably applied also to the periphery of the back surface.
  • this protective film may be peeled off or peeled off immediately after immersion exposure when the wafer W is transported in the processing section, causing particle contamination.
  • particle contamination may occur due to various factors related to immersion exposure.
  • it is effective to remove the particles by cleaning the wafer W by the cleaning unit after the immersion exposure.
  • the throughput must be increased by increasing the number of processing units that are directly involved in the coating and developing processes. Therefore, it is advantageous to arrange the cleaning unit for particle removal in the interface block that connects the process block and the exposure apparatus, not the process block.
  • a general wafer cleaning unit is combined with a coating unit and a developing unit, and supplies a cleaning liquid to the central portion of the wafer W while rotating the wafer W to clean the wafer w.
  • This is a type that performs spin drying.
  • a large cup body surrounding the spin chuck must be provided. Furthermore, if a suction device is provided to reliably capture the scattered cleaning solution in the cup, the cleaning unit will be further increased in size. Therefore, it is not desirable from the viewpoint of space efficiency to dispose the cleaning unit having the above configuration as a cleaning unit exclusively for cleaning after immersion exposure. In addition, it is difficult to arrange such a large washing unit because it is necessary to save as much space as possible in the interface block.
  • JP2004-95708A (Refer to pages 8, 9, 12, and 20) [In this case, cleaning liquid is discharged from above both ends of the wafer to flow over the wafer, so that the wafer An apparatus for sucking and drying a suction mechanism force provided above a central portion together with a developer is disclosed. But that Even in such an apparatus, since the cleaning liquid flows down from the edge of the wafer, a force cup body surrounding the wafer is still necessary, and this cup body prevents the apparatus from being downsized.
  • the present invention has been made under such circumstances, and an overall object of the present invention is to provide a technique for cleaning a wafer after exposure without requiring a large space. is there.
  • the present invention is preferably used to remove particles adhering to the wafer after immersion exposure, or to remove the water-repellent protective film used to repel the liquid used during immersion exposure. Used.
  • a coating unit comprising a coating unit for coating a resist on the surface of a semiconductor wafer and a developing unit for supplying a developing solution to the exposed semiconductor wafer for development.
  • a cleaning unit for cleaning the peripheral portion of the semiconductor wafer after being exposed, the cleaning unit,
  • a wafer holding unit for holding a semiconductor wafer horizontally
  • An upper portion, a lower portion, and a side portion and is surrounded by the upper portion, the lower portion, and the side portion, and is at least one surrounding portion that defines an open space, and the space is held by the wafer holding portion.
  • At least one surrounding portion that is capable of accommodating a peripheral edge of a semiconductor wafer;
  • An upper nozzle part and a lower nozzle part which are provided at the upper part and the lower part of the surrounding part and respectively discharge the cleaning liquid toward the front and back peripheral parts of the semiconductor wafer, and the cleaning liquid to the upper nozzle part and the lower nozzle part, respectively.
  • the cleaning liquid supply unit can be configured to be able to switch and supply different first and second cleaning liquids. For example, if a water-repellent protective film is formed on the periphery of the front and back surfaces of the semiconductor wafer before immersion exposure, the protective film is removed using the first cleaning liquid and the second cleaning liquid. You may stumble to do.
  • the first cleaning liquid is a chemical liquid for removing the protective film
  • the second cleaning liquid is a cleaning liquid for removing the chemical liquid.
  • the upper nozzle portion and the Z or lower nozzle portion include a plurality of cleaning liquid discharge ports, and the plurality of cleaning liquid discharge ports are formed when the surrounding portion is at the cleaning position.
  • the cleaning liquid supply unit can be configured such that the cleaning liquid can be sent only to a cleaning liquid discharge port selected from the plurality of cleaning liquid discharge ports.
  • the plurality of cleaning liquid discharge ports are arranged on concentric circles having a common center at the center of the semiconductor wafer when the surrounding portion is at the cleaning position, and two or more cleaning liquid discharge ports are provided on each circle. An exit is arranged.
  • the coating and developing apparatus further includes a ceiling plate portion connected to the upper portion of the surrounding portion, and a dry gas supply unit that supplies a dry gas to the surface of the semiconductor wafer via the ceiling plate portion.
  • the ceiling plate portion that may be provided may be formed so as to extend above the center of the semiconductor wafer when the surrounding portion is in the cleaning position.
  • the coating / developing apparatus may include a pair of surrounding portions, and these surrounding portions can be arranged to face each other in the diameter direction of the semiconductor wafer when in the cleaning position.
  • the coating and developing apparatus includes a ceiling plate portion that connects the upper portions of a pair of surrounding portions facing each other, a drying gas supply unit that supplies a drying gas to the surface of the semiconductor wafer via the ceiling plate portion, You can even have more.
  • the coating / developing apparatus includes a processing block including the coating unit and the developing unit, and exposing the processing block to a semiconductor wafer, particularly immersion exposure. And an interface block for connecting to an exposure apparatus that performs light, and the cleaning unit is provided in the interface block.
  • the ceiling plate portion can be provided detachably with respect to the upper portion of the surrounding portion.
  • the ceiling plate portion is connected to the surrounding portion at the cleaning position and connected.
  • a lifting / lowering mechanism is provided.
  • the surrounding portion and the ceiling plate portion may be an inseparable single member.
  • the cleaning unit described above may be provided in an exposure apparatus that forms a liquid layer on the surface of a semiconductor wafer coated with a resist and performs immersion exposure instead of the coating / developing apparatus.
  • the present invention relates to a resist pattern forming method in which a resist is applied to the surface of a semiconductor wafer, the semiconductor wafer is exposed, and then a developer is supplied to the surface of the wafer for development.
  • the semiconductor wafer includes a cleaning step for cleaning after exposing the semiconductor wafer and before developing, and the cleaning step includes:
  • a step of positioning the surrounding portion having an upper portion, a lower portion and a side portion at a position where a peripheral portion of the semiconductor wafer held by the wafer holding portion is surrounded by the upper portion, the lower portion and the side portion;
  • the cleaning liquid is discharged from the upper cleaning liquid discharge port and the lower cleaning liquid discharge port provided in the surrounding portion toward the peripheral edge of the front surface and the back surface of the semiconductor wafer, respectively, and is provided on the side portion of the surrounding portion.
  • a method for forming a resist pattern is provided.
  • the exposure is immersion exposure in which exposure is performed while forming a liquid layer on the surface of the semiconductor wafer
  • immersion exposure is performed on the peripheral portions of the front and back surfaces of the semiconductor wafer.
  • a water-repellent protective film is formed before this is performed.
  • the step of discharging the cleaning liquid from the upper cleaning liquid discharge port and the lower cleaning liquid discharge locusr the step of discharging the chemical liquid to the peripheral edges of the both sides of the semiconductor wafer and then removing the protective film, And a step of removing the chemical solution by discharging a cleaning solution to the peripheral edges of the both sides of the wafer.
  • the cleaning liquid for removing the chemical solution is discharged toward a position closer to the center of the semiconductor wafer than the chemical solution.
  • Dry gas is supplied to the surface of the semiconductor wafer from the ceiling plate extending from the upper part of the surrounding part to at least the center of the semiconductor wafer.
  • the peripheral portion of the wafer W is surrounded by the surrounding portion, and the cleaning liquid is discharged from the upper nozzle portion and the lower nozzle portion of the surrounding portion to the peripheral portion of the wafer, and the cleaning liquid is discharged to the side portion of the surrounding portion. Since the vacuum is sucked from the suction port, the cleaning liquid does not spill from the wafer surface and surrounding part. Therefore, it is possible to reduce the space occupied by the cleaning unit, which eliminates the need to provide a cup body for collecting the cleaning liquid around the wafer holding unit, and as a result, enlargement of the coating / developing apparatus can be avoided.
  • cleaning processing under various conditions is possible.
  • the protective film can be removed first with a chemical solution in order to remove the protective film, and then pure water cleaning can be performed.
  • the degree of freedom in changing the cleaning conditions can be increased.
  • the removal width of the protective film can be adjusted.
  • the chemical solution can be washed away by supplying a cleaning solution such as pure water to the inner side (closer to the center of the wafer) than the discharge position. The removed components can be removed reliably.
  • the ceiling plate partial force connected to the upper part of the surrounding portion.
  • FIG. 1 is a plan view of a coating / developing apparatus according to an embodiment of the present invention.
  • FIG. 2 is a perspective view of the coating / developing apparatus shown in FIG.
  • FIG. 3 is a perspective view showing an internal structure of an interface part of the coating / developing apparatus shown in FIG. 1.
  • FIG. 4 is a perspective view showing a nozzle unit incorporated in the coating / developing apparatus shown in FIG. 1.
  • FIG. 5 is a longitudinal sectional view of the nozzle unit shown in FIG.
  • FIG. 6 is a cross-sectional view of the nozzle unit shown in FIG. 4 cut along the line Y—Y of FIG. 4, and is a view showing a planar arrangement of cleaning liquid discharge ports.
  • FIG. 7 is a cross-sectional view of the nozzle unit shown in FIG. 4 cut along the line Z-Z in FIG.
  • FIG. 8 is an explanatory diagram for explaining a suction system and various supply systems connected to the nozzle unit shown in FIG. 4.
  • FIG. 9 is a process diagram showing a wafer cleaning flow using the nozzle unit shown in FIG. 4.
  • FIG. 10 is an explanatory view showing a state in which a wafer is cleaned using the nozzle unit shown in FIG.
  • FIG. 11 is an explanatory view showing how a wafer is dried using the nozzle unit shown in FIG.
  • FIG. 12 is a perspective view showing another nozzle unit that can be incorporated in the coating and developing apparatus shown in FIG. 1.
  • FIG. 13 is a partial cross-sectional view of the nozzle unit shown in FIG.
  • FIG. 14 is a schematic cross-sectional view of exposure means for immersion exposure of a wafer.
  • FIG. 15 is an explanatory view showing a state in which the wafer surface is subjected to immersion exposure by the exposure means of FIG. Explanation of symbols
  • B1 is a carrier mounting section for carrying in / out a carrier 2 in which a plurality of, for example, 13 wafers W (substrates) are hermetically stored.
  • the carrier platform B1 includes a carrier station 20 having a platform 20a on which a plurality of carriers 2 can be placed side by side, and an openable and closable window 21 provided on the front wall of the carrier station 20. Carrier through this window 21
  • the delivery means A1 for taking out the wafer W from 2 is provided.
  • a processing unit B2 surrounded by a casing 22 is connected to the rear of the carrier mounting unit B1. Heating / cooling unit shelves Ul, U2, U3, liquid processing unit shelves U4, U5, and wafers W are transferred between each unit in this processing section B2.
  • Main transfer means A2 and A3 are arranged.
  • Unit shelves Ul, U2, U3 and main transport means A2, A3 are arranged in a line in the front-rear direction when viewed from carrier mounting part B1, and unit shelves Ul, U2, U3 and main transport means A2, A3
  • An opening for wafer transfer (not shown) is provided at each of the connection parts, and weno and W can freely move inside the processing section B2 from the unit shelf U1 on one end side to the unit shelf U3 on the other end side.
  • Each main transport means (A2, A3) consists of adjacent heating / cooling unit shelves (Ul, U2, U3) side front and rear, liquid processing unit shelves (U4, U5) side right side, and the opposite side It is placed in a space surrounded by a wall 23 consisting of the left side of the wall.
  • reference numeral 24 denotes a temperature / humidity adjustment unit including a temperature adjustment device for the treatment liquid used in each unit and a duct for adjusting the temperature and humidity of each unit.
  • Each unit shelf Ul, U2, U3 is configured by laminating various units for performing pre-processing and post-processing of the liquid processing performed in unit shelves U4, U5 in multiple stages, for example, 10 stages. Yes.
  • the units included in the unit shelves ui, U2, U3 include, for example, a heating unit (PAB) (not shown) for heating (beta) the wafer W and a cooling unit for cooling the wafer W.
  • PAB heating unit
  • each of the unit shelves U4 and U5 has an antireflection film coating unit (BARC) 26, a resist coating unit (COT) 2 on a chemical solution storage section for storing resist and developer.
  • BARC antireflection film coating unit
  • COT resist coating unit
  • 7 and Ueno and W are provided with a plurality of, for example, five stages of liquid processing units such as a development unit (DEV) 28 for supplying a developing solution for development processing.
  • DEV development unit
  • a resist coating unit 27 is coated on the surface of the wafer W, and then a water-repellent protective film is formed thereon.
  • An exposure unit B4 is connected to the back surface of the processing unit B2 behind the unit shelf U3 via an interface unit (interface block) B3.
  • the interface unit B3 includes a first transfer chamber 3 provided in the front and rear between the processing unit B2 and the exposure unit B4.
  • the transfer chambers 3A and 3B are provided with a first wafer transfer unit 31 and a second transfer unit 32, respectively.
  • Each of the first wafer transfer unit 31 and the second transfer unit 32 includes a transfer arm 31A and a transfer arm 32A that are movable up and down, rotatable about a vertical axis, and movable back and forth.
  • a transfer unit (TRS3) 37, and two high plates each having a cooling plate, are located on the right side of the first wafer transfer unit 31 when viewed from the carrier mounting unit B1.
  • a precision temperature control unit (CPL2) 39 and a heating / cooling unit (PEB) 38 for post-exposure beta processing of the wafer W that has been subjected to immersion exposure are stacked one above the other, as seen from the carrier mounting part B1 side.
  • Two buffer cassettes (SBU) 34 and 35 for temporarily storing a plurality of, for example, 13 wafers W, are provided on the left side of the first wafer transfer unit 31.
  • a wafer holding unit 41 is provided on the left side when viewed from the carrier mounting unit B1.
  • the wafer holding unit 41 forms part of the cleaning unit according to the present invention.
  • the wafer holding unit 41 is provided on a drive mechanism 42 including a rotation mechanism installed in the lower part of the second transfer chamber 3B via a shaft portion standing in the vertical direction. Further, the wafer holding unit 41 has a vacuum chucking force that attracts the central portion on the back side of the wafer, and can be rotated around the vertical axis by the drive mechanism 42 while holding the wafer W.
  • the wafer holding unit 41 is also used as a delivery stage on which the wafer W is temporarily placed when the wafer W is delivered from the transfer arm 4A arranged in the exposure unit B4 to the arm 31A of the interface unit B3.
  • the arm 4A of the exposure part B4 is configured to be movable up and down, rotatable about the vertical axis, and movable back and forth.
  • a nozzle unit 100 is provided on the left side of the wafer holding unit 41 as viewed from the carrier mounting unit B1 side force.
  • the nozzle unit 100 forms part of the cleaning unit according to the present invention.
  • the nozzle unit 100 has square bracket-shaped portions 4 and 4 at both ends thereof.
  • the “square bracket shape” can be understood as the shape of the Japanese katakana character “ko” or similar to a rectangle with one side removed.
  • part 4 is not limited to a force that is preferably square bracketed. That is, the portion 4 has an upper portion facing the front surface of the wafer W, a lower portion facing the back surface of the wafer W, and a side portion facing the peripheral edge of the wafer and connecting the upper portion and the lower portion.
  • the central portion of the wafer w that can accommodate the peripheral portion is formed as an enclosing portion that defines an open space.
  • the portion 4 can have a shape similar to a U-shape lying sideways, or the portion 4 can be a block of any shape in which a lateral recess for accommodating the peripheral edge of the wafer W is formed. It can be.
  • the nozzle unit 100 moves horizontally in the Y direction in FIG. 3 while maintaining the horizontal posture, and can move forward and backward with respect to the wafer holder 41.
  • the nozzle unit 100 has a ceiling plate portion 43 and is provided with square bracket portions 4 and 4 having the same structure at both ends of the ceiling plate portion 43.
  • the pair of square bracket-shaped portions 4 and 4 are positioned at positions facing each other with respect to the diameter direction of the wafer W held by the wafer holding portion 41 when the nozzle unit 100 is at the cleaning position (described later). And it is formed so as to surround the peripheral edge of the wafer W.
  • An upper nozzle portion 50 for discharging the cleaning liquid to the surface of the peripheral portion of the wafer W is provided above the square bracket-shaped portions 4 and 4, and a wafer is disposed below the square bracket-shaped portions 4 and 4.
  • a lower nozzle portion 60 for discharging the cleaning liquid is provided on the back surface of the peripheral edge portion of W.
  • the upper nozzle part 50 and the lower nozzle part 60 are provided with a plurality of, for example, six cleaning liquid discharge ports.
  • the planar arrangement of the cleaning liquid discharge ports in the upper nozzle portion 50 and the lower nozzle portion 60 is the same. That is, when the square bracket-shaped portion 4 is seen through from above, the position of each cleaning liquid discharge port of the upper nozzle portion 50 coincides with one of the cleaning liquid discharge ports of the lower nozzle portion 60.
  • the configuration of the upper nozzle portion 50 will be described with reference to FIG.
  • the upper nozzle part 50 has a plurality of cleaning liquid discharge ports in the illustrated example. These cleaning liquid discharge ports are divided into three groups, and two cleaning liquid discharge ports belong to each group.
  • the first set of cleaning liquid outlets (50a, 50a) on broken line a, the second set of cleaning liquid outlets (50b, 50b) on broken line b, and the third set of cleaning liquid outlets (50c, 50c) on broken line c ) Is arranged.
  • the distances from the periphery of the wafer W to the cleaning liquid discharge ports (50a, 50a), (50b, 50b) and (50c, 50c) increase in this order.
  • the two cleaning liquid discharge ports (50a, 50a), (50b, 50b), (50c, 50c) of each set are arranged in line-symmetrical positions with respect to a line extending in the diameter direction of wafer W, and the wafer W Rim of The greater the force distance, the greater the distance between the two cleaning liquid outlets that form the pair, the greater the distance between the two cleaning liquid outlets.
  • the cleaning liquid discharge ports are arranged in two lines symmetrically on three concentric circles having a diameter smaller than that of the wafer W.
  • the cleaning liquid supply pipes 51a, 51b and 51c are provided with valves V3, V4 and V5, respectively.
  • the cleaning liquid discharge ports (60a, 60a), (60b, 60b), (60c, 60c) are connected to the cleaning liquid supply unit 84 via the cleaning liquid supply pipes 61a, 61b, 61c, respectively, and the cleaning liquid supply pipe 61a , 61b, 61c are provided with valves V6, V7, V8, respectively.
  • the cleaning liquid supply unit 84 includes a first cleaning liquid, a first cleaning liquid supply source 85 that supplies a chemical liquid for removing a water-repellent protective film such as a fluorine-containing solution, and a second cleaning liquid.
  • a suction port 44 for sucking the cleaning liquid discharged from each of the upper nozzle portion 50 and the lower nozzle portion 60 is formed on the side portions of the square bracket-shaped portions 4 and 4.
  • the suction port 44 is enlarged as its horizontal cross section approaches the wafer W, so that the cleaning liquid applied to the peripheral edge of the wafer W can be efficiently sucked.
  • the suction port 44 is connected to suction means 83 such as a pump via a suction pipe 82 connected thereto.
  • the suction pipe 82 is provided with a valve V2.
  • a plurality of suction ports may be provided on the sides of the square bracket portions 4 and 4, and a suction tube may be connected to each suction port.
  • a dry gas supply unit 45 is provided on the ceiling plate portion 43 side.
  • the dry gas supply unit 45 includes a dry gas supply port 46 formed in the center of the ceiling plate portion 43, and a dry gas supply port 46.
  • the porous member 48 serves to uniformly distribute the drying gas and supply the drying gas to the surface of the wafer W with high uniformity.
  • the space 47, the porous member 48, and the plate 52 of the dry gas supply unit 45 are formed in a band shape that is slightly narrower than the ceiling plate portion 43 in the diameter direction of the wafer.
  • the dry gas supply unit 45 sprays the dry gas uniformly in the diameter direction of the wafer W. Further, as shown in FIG. 8, a gas supply pipe 80 is connected to the dry gas supply port 46, and is connected to a dry gas supply source 81 through the gas supply pipe 80. The gas supply pipe 80 is provided with a valve VI.
  • guide members 53 are provided along both side surfaces of the ceiling plate portion 43 in the longitudinal direction.
  • the guide member 53 has a function of guiding the dry gas supplied from the dry gas supply unit 45 toward the space surrounded by the square bracket-shaped portions 4 and 4, particularly toward the inner surfaces of the square bracket-shaped portions 4 and 4. Have.
  • the moving mechanism 74 can include, for example, a moving body 71 and a screw 72 that form a ball screw mechanism, and a guide rail 73 that guides the moving body 71.
  • the nozzle unit 100 can be moved between a cleaning position surrounding the peripheral edge of the wafer W and a retracted position where the cleaning position force is retracted.
  • the cleaning position is a position where the peripheral edge of the wafer W is inserted into the space surrounded by the square bracket-shaped parts 4 and 4 with a gap from the square bracket-shaped parts 4 and 4. .
  • the upper nozzle portion 50 and the lower nozzle portion 60 provided in the square bracket-shaped portions 4 and 4 are positioned at the peripheral edge portion of the wafer W as shown in FIG.
  • the wafer W is coated with a resist by a resist coating unit 27, and further formed with a water-repellent protective film thereon, and then subjected to immersion exposure at an exposure unit B4.
  • a water-repellent protective film is continuously formed on the entire front surface of the wafer W, the side edge surface of the wafer W, and the peripheral edge of the back surface of the wafer W.
  • the water-repellent protective film is formed only on the peripheral edge of the wafer W!
  • the nozzle unit 100 is also moved to the cleaning position by the moving mechanism 74. That is, the nozzle unit 100 is moved to a position where the peripheral edge of the wafer W is inserted into the space surrounded by the square bracket-shaped portions 4 and 4 (S2). In this cleaning position, the square bracket portions 4 and 4 surround the periphery of the wafer W, and as shown in FIG. 6, the upper nozzle portion 50 and the lower nozzle portion 60 provided on the square bracket portions 4 and 4 are provided. Faces the front and back surfaces of the peripheral edge of the wafer W, respectively.
  • a chemical solution for removing the water-repellent protective film having a fluorine-containing solution force which is the first cleaning solution, is discharged from the upper nozzle portion 50 and the lower nozzle portion 60 toward the front and back surfaces of the wafer W.
  • the space surrounded by the square bracket-shaped portions 4 and 4 is sucked through the suction ports 44 on the sides of the square bracket-shaped portions 4 and 4 (S3).
  • the three-way nozzle V9 is switched to stop the discharge of the first cleaning liquid, and the pure water as the second cleaning liquid is discharged toward the front and back surfaces of the wafer W.
  • the suction ports 44 on the side portions of the bracket-shaped portions 4 and 4 are brought into a suction state (S4).
  • the suction through the suction port 44 is preferably started substantially at the same time as or shortly before the start of the supply of the first cleaning liquid.
  • the suction by the suction port 44 is continued when the cleaning liquid is switched from the first cleaning liquid force to the second cleaning liquid by the three-way valve V9 and thereafter.
  • a resist HR is applied to a region inside the outer peripheral edge of the surface of a 12-inch wafer W.
  • the distance from the outer peripheral edge of the wafer W to the outer peripheral edge of the resist HR is, for example, 1.5 mm.
  • the protective film H is continuously formed on Ueno, the entire surface of W, the side edge of the wafer W, and the peripheral edge of the back surface of the wafer W.
  • the protective film H on the back surface of the wafer W is formed in a range from the outer peripheral edge to the center part at a predetermined distance, for example, about 5 mm.
  • the above-described cleaning liquid discharge ports (50 a, 50 a) are positioned substantially directly above the outer peripheral edge of the resist HR, and the cleaning liquid discharge ports (60 b, 60 b) are positioned approximately directly below the outer peripheral edge of the protective film H.
  • the protective film H formed in the range from the outer peripheral edge of the wafer W to the outer peripheral edge of the resist HR, the protective film H formed on the side edge of the wafer W, and the back surface of the wafer W are formed.
  • the protective film H is removed.
  • the cleaning liquid discharge port (50a, 50a) from which the first cleaning liquid (chemical solution) was discharged and the cleaning liquid discharge port located on the inner side (near the center of the wafer W) than the cleaning liquid discharge ports (60b, 60b) (50b, 50b) and the cleaning liquid discharge port (60c, 60c) spray pure water as the second cleaning liquid on the front and back sides of the wafer W, respectively.
  • the surface of the wafer W is dried with a drying gas.
  • the dry gas sprayed uniformly on the surface of the wafer W is sucked by the suction ports 44 on the sides of the square bracket-shaped portions 4 and 4, and therefore, toward the outer peripheral edge of the wafer W.
  • the air is sucked into the suction port 44 and exhausted (S5).
  • the wafer holding section 41 that is, the wafer W is rotated by a predetermined angle ⁇ by the driving mechanism 42, and cleaning and drying (S3 to S5) are performed at that position.
  • the angle ⁇ is approximately equal to the central angle of the wafer W corresponding to the above-described cleaning liquid discharge port installation range.
  • the wafer W is sequentially rotated by an angle ⁇ , and cleaning and drying (S3 to S5) are performed at each angular position (S6).
  • the nozzle unit 100 is moved from the cleaning position to the retracted position by the moving mechanism 74 (S7).
  • the transfer arm 32 in the second transfer chamber 3B 32 A receives the wafer W placed on the wafer holder 41 and transfers the wafer W to the first transfer chamber 3A (S8).
  • the brackets 4 and 4 surrounding the wafer W surround the periphery of the wafer W, and the cleaning liquid discharged from the upper nozzle part 50 and the lower nozzle part 60 of the square bracket parts 4 and 4 is square brackets. Since the suction is performed from the suction ports 44 on the sides of the parts 4 and 4, the cleaning liquid does not spill from the surface of the wafer W and the square brackets 4 and 4. For this reason, the space occupied by the cleaning unit is reduced because it is not necessary to provide a cup body for collecting the cleaning liquid around the wafer holder 41, and as a result, an increase in the size of the coating and developing apparatus can be avoided.
  • the three-way nozzle V9 can switch between the first cleaning liquid and the second cleaning liquid, and the nozzles V3 to V8 can arbitrarily select the cleaning liquid discharge port for discharging the cleaning liquid.
  • the discharge mode can be changed flexibly, and optimal cleaning conditions can be realized. For example, as described above, when cleaning the wafer W with the water-repellent protective film H, first, the selected set of cleaning liquid discharge locusers discharges the chemical solution for removing the protective film H, and then selects the first.
  • Protective film H in the area to be peeled off by discharging cleaning liquid for cleaning and removing the chemical solution from one set of cleaning liquid outlets located inside (near the center of the wafer W) from one set of cleaning liquid discharge ports it is possible to reliably remove only the chemicals and the exfoliated material that has been separated by the chemicals.
  • the protective film H on the peripheral edge of the wafer W can be surely removed, and the peripheral edge after the protective film H is peeled off is also clean, so that particle contamination can be reliably prevented.
  • the degree of freedom in changing the cleaning conditions can be increased.
  • the removal width of the protective film H can be selected.
  • a set of cleaning liquids selected with respect to Ueno and W without the formation of the protective film H is discharged from the discharge port, and then one set located inside (close to the center of the wafer W) from the previously selected one set of cleaning solution discharge ports. It is also possible to discharge pure water from the cleaning liquid discharge locus. Also in this case, particle contamination can be prevented.
  • FIG. 12 and FIG. 13 show another embodiment of the present invention.
  • the ceiling plate portion 43 is detachably attached to the upper part of the square bracket-shaped portions 4 and 4 at the cleaning position by the lifting mechanism 53.
  • the ceiling plate portion 43 is formed in a substantially circular shape, and the outer edge portion of the ceiling plate portion 43 is in close contact with the substantially circular step portion 54 formed on one end side of the square bracket-shaped portions 4, 4.
  • the square bracket-shaped portions 4 and 4 are opposed to each other, and can be moved horizontally by a dedicated drive mechanism 74, respectively. 12 and 13, the same components as those of the nozzle unit 100 described above are denoted by the same reference numerals.
  • the process performed at each position by sequentially rotating the wafer W by the angle ⁇ may be only the cleaning process (S3 to S4) of the periphery of the wafer and W.
  • the cleaning gas is supplied from the drying gas supply unit 45 of the ceiling plate portion 43 to the entire surface of the wafer W after cleaning (S3 to S4) at the final angular position. That is, the peripheral portion of the wafer W is dried by suction of the square bracket portions 4 and 4, and the area inside the suction port 44 force S is the ceiling plate portion. It can be dried by the dry gas supplied from 43.
  • the ceiling plate portion 43 may be sized to cover the entire surface of the wafer W.
  • the dry gas blowing area in the ceiling plate part 43 is substantially the same size as the wafer W.
  • a relief must be provided so that the square bracket-shaped portions 4 and 4 can enter there.
  • the ceiling plate part 43 projects outwardly on the left and right sides of the upper part of the square bracket-shaped parts 4 and 4.
  • the substantially circular ceiling plate portion 43 may not be provided, and the Ueno and W peripheral portions may be simply washed (S3 to S4) with the square bracket-shaped portions 4 and 4 facing each other.
  • an apparatus for drying the surface of the wafer W for example, a simple unit for spraying a drying gas may be provided separately, and the drying process may be performed there.
  • the cleaning unit is a force provided to the interface unit that forms part of the coating and developing device.
  • the cleaning unit is not limited to this, and the immersion exposure apparatus It may be provided inside.
  • the configuration of the immersion exposure apparatus is well known and will not be described in detail.
  • an immersion exposure apparatus having the configuration shown in FIG. 14 can be used.

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)

Abstract

L’invention porte sur un appareil d’enduction/de développement avec une unité de nettoyage compacte pour retirer un film de protection contre les projections d’eau servant à déverser les particules collées à la périphérie d’une plaquette semi-conductrice après exposition par immersion et avant développement et/ou déversement d’un liquide pendant l’exposition par immersion. L’unité de nettoyage est disposée dans un bloc d’interface de l’appareil d’enduction/de développement. Une unité à buse se déplace et la périphérie de la plaquette maintenue par un élément support de plaquette est entourée d’une pièce périphérique en forme de cornière de l’unité à buse. Une solution de nettoyage est éjectée sur la périphérie d’un plan avant et d’un plan arrière de la plaquette depuis une partie buse côté supérieur et une partie buse côté inférieur ménagées sur une partie supérieure et une partie inférieure de la pièce périphérique, respectivement, tandis que dans le même temps la solution de nettoyage est aspirée au moyen d’un orifice d’aspiration sur une partie latérale de la pièce périphérique.
PCT/JP2005/016523 2004-09-10 2005-09-08 Appareil d’enduction/de developpement, appareil d’exposition et procede de formation de motif de resist Ceased WO2006028173A1 (fr)

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JP2004264755A JP4343069B2 (ja) 2004-09-10 2004-09-10 塗布、現像装置、露光装置及びレジストパターン形成方法。
JP2004-264755 2004-09-10

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WO2006028173A1 true WO2006028173A1 (fr) 2006-03-16

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US7641405B2 (en) 2007-02-15 2010-01-05 Sokudo Co., Ltd. Substrate processing apparatus with integrated top and edge cleaning unit
US8031324B2 (en) 2007-02-15 2011-10-04 Sokudo Co., Ltd. Substrate processing apparatus with integrated cleaning unit
US8932672B2 (en) 2006-02-02 2015-01-13 Screen Semiconductor Solutions Co., Ltd. Substrate processing apparatus
CN110600405A (zh) * 2019-08-28 2019-12-20 长江存储科技有限责任公司 清洗装置、方法及存储介质
CN111352314A (zh) * 2018-12-20 2020-06-30 夏泰鑫半导体(青岛)有限公司 用于半导体器件的显影装置及显影方法
CN112405339A (zh) * 2020-12-05 2021-02-26 天津中环领先材料技术有限公司 一种硅片抛光用暂存放置系统

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JP5154006B2 (ja) * 2004-12-06 2013-02-27 株式会社Ｓｏｋｕｄｏ 基板処理装置
JP2006220847A (ja) * 2005-02-09 2006-08-24 Toshiba Corp レジストパターン形成方法
JP2007266074A (ja) * 2006-03-27 2007-10-11 Toshiba Corp 半導体装置の製造方法及び液浸リソグラフィーシステム
JP4832142B2 (ja) * 2006-03-31 2011-12-07 株式会社Ｓｏｋｕｄｏ 基板処理装置
JP4912180B2 (ja) * 2006-09-15 2012-04-11 東京エレクトロン株式会社 露光・現像処理方法
JP4926678B2 (ja) * 2006-12-04 2012-05-09 東京エレクトロン株式会社 液浸露光用洗浄装置および洗浄方法、ならびにコンピュータプログラムおよび記憶媒体
JP2008153450A (ja) 2006-12-18 2008-07-03 Tokyo Electron Ltd 塗布膜処理方法および塗布膜処理装置
JP2008153422A (ja) * 2006-12-18 2008-07-03 Tokyo Electron Ltd 塗布・現像装置およびパターン形成方法
JP2008198820A (ja) 2007-02-14 2008-08-28 Tokyo Electron Ltd 基板処理方法及び基板処理装置
JP4893574B2 (ja) * 2007-10-11 2012-03-07 東京エレクトロン株式会社 表面露光装置、表面露光方法、塗布、現像装置及び記憶媒体
JP5308054B2 (ja) * 2008-04-16 2013-10-09 株式会社Ｓｏｋｕｄｏ 基板処理装置
JP2009295716A (ja) * 2008-06-04 2009-12-17 Toshiba Corp 半導体装置の製造方法及び基板処理装置
JP2013118205A (ja) * 2010-03-23 2013-06-13 Jet Co Ltd 基板処理装置
JP5924267B2 (ja) 2010-12-14 2016-05-25 株式会社ニコン 検査方法、検査装置、露光管理方法、露光システムおよび半導体デバイスの製造方法

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US8932672B2 (en) 2006-02-02 2015-01-13 Screen Semiconductor Solutions Co., Ltd. Substrate processing apparatus
US9477162B2 (en) 2006-02-02 2016-10-25 Screen Semiconductor Solutions Co., Ltd. Substrate processing method
US7641405B2 (en) 2007-02-15 2010-01-05 Sokudo Co., Ltd. Substrate processing apparatus with integrated top and edge cleaning unit
US8031324B2 (en) 2007-02-15 2011-10-04 Sokudo Co., Ltd. Substrate processing apparatus with integrated cleaning unit
US7641406B2 (en) 2007-07-26 2010-01-05 Sokudo Co., Ltd. Bevel inspection apparatus for substrate processing
CN111352314A (zh) * 2018-12-20 2020-06-30 夏泰鑫半导体(青岛)有限公司 用于半导体器件的显影装置及显影方法
CN110600405A (zh) * 2019-08-28 2019-12-20 长江存储科技有限责任公司 清洗装置、方法及存储介质
CN112405339A (zh) * 2020-12-05 2021-02-26 天津中环领先材料技术有限公司 一种硅片抛光用暂存放置系统

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TWI267129B (en) 2006-11-21
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TW200616041A (en) 2006-05-16

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