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WO2006013673A1 - Monocristal de grenat paramagnétique pour dispositif magnétooptique et dispositif magnétooptique - Google Patents

Monocristal de grenat paramagnétique pour dispositif magnétooptique et dispositif magnétooptique Download PDF

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Publication number
WO2006013673A1
WO2006013673A1 PCT/JP2005/009988 JP2005009988W WO2006013673A1 WO 2006013673 A1 WO2006013673 A1 WO 2006013673A1 JP 2005009988 W JP2005009988 W JP 2005009988W WO 2006013673 A1 WO2006013673 A1 WO 2006013673A1
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Prior art keywords
single crystal
magneto
optical
magnet
garnet single
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English (en)
Japanese (ja)
Inventor
Mikio Geho
Takenori Sekijima
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Murata Manufacturing Co Ltd
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Murata Manufacturing Co Ltd
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Priority to JP2006531288A priority Critical patent/JP4428387B2/ja
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Anticipated expiration legal-status Critical
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    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B1/00—Optical elements characterised by the material of which they are made; Optical coatings for optical elements
    • G02B1/02—Optical elements characterised by the material of which they are made; Optical coatings for optical elements made of crystals, e.g. rock-salt, semi-conductors
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/01—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics
    • C04B35/44—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on aluminates
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
    • C30B13/16—Heating of the molten zone
    • C30B13/22—Heating of the molten zone by irradiation or electric discharge
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/16—Oxides
    • C30B29/22—Complex oxides
    • C30B29/28—Complex oxides with formula A3Me5O12 wherein A is a rare earth metal and Me is Fe, Ga, Sc, Cr, Co or Al, e.g. garnets
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/0009—Materials therefor
    • G02F1/0036—Magneto-optical materials
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/09—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on magneto-optical elements, e.g. exhibiting Faraday effect
    • G02F1/093—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on magneto-optical elements, e.g. exhibiting Faraday effect used as non-reciprocal devices, e.g. optical isolators, circulators
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F1/00—Magnets or magnetic bodies characterised by the magnetic materials therefor; Selection of materials for their magnetic properties
    • H01F1/01—Magnets or magnetic bodies characterised by the magnetic materials therefor; Selection of materials for their magnetic properties of inorganic materials
    • H01F1/03—Magnets or magnetic bodies characterised by the magnetic materials therefor; Selection of materials for their magnetic properties of inorganic materials characterised by their coercivity
    • H01F1/12—Magnets or magnetic bodies characterised by the magnetic materials therefor; Selection of materials for their magnetic properties of inorganic materials characterised by their coercivity of soft-magnetic materials
    • H01F1/34—Magnets or magnetic bodies characterised by the magnetic materials therefor; Selection of materials for their magnetic properties of inorganic materials characterised by their coercivity of soft-magnetic materials non-metallic substances, e.g. ferrites
    • H01F1/342—Oxides
    • H01F1/344—Ferrites, e.g. having a cubic spinel structure (X2+O)(Y23+O3), e.g. magnetite Fe3O4
    • H01F1/346—[(TO4) 3] with T= Si, Al, Fe, Ga
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
    • C04B2235/30—Constituents and secondary phases not being of a fibrous nature
    • C04B2235/32—Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
    • C04B2235/3205—Alkaline earth oxides or oxide forming salts thereof, e.g. beryllium oxide
    • C04B2235/3206—Magnesium oxides or oxide-forming salts thereof
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
    • C04B2235/30—Constituents and secondary phases not being of a fibrous nature
    • C04B2235/32—Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
    • C04B2235/3205—Alkaline earth oxides or oxide forming salts thereof, e.g. beryllium oxide
    • C04B2235/3208—Calcium oxide or oxide-forming salts thereof, e.g. lime
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
    • C04B2235/30—Constituents and secondary phases not being of a fibrous nature
    • C04B2235/32—Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
    • C04B2235/3224—Rare earth oxide or oxide forming salts thereof, e.g. scandium oxide
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/70—Aspects relating to sintered or melt-casted ceramic products
    • C04B2235/74—Physical characteristics
    • C04B2235/76—Crystal structural characteristics, e.g. symmetry
    • C04B2235/762—Cubic symmetry, e.g. beta-SiC
    • C04B2235/764—Garnet structure A3B2(CO4)3
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/70—Aspects relating to sintered or melt-casted ceramic products
    • C04B2235/74—Physical characteristics
    • C04B2235/77—Density
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F1/00—Magnets or magnetic bodies characterised by the magnetic materials therefor; Selection of materials for their magnetic properties
    • H01F1/0018—Diamagnetic or paramagnetic materials, i.e. materials with low susceptibility and no hysteresis

Definitions

  • the present invention relates to a single crystal for a magneto-optical device used to construct a magneto-optical device such as an optical isolator, and more particularly, to a paramagnetic garnet single unit for a terbium 'aluminum-based magneto-optical device.
  • the present invention relates to a magneto-optical device using the crystal and the paramagnetic garnet single crystal.
  • the optical isolator is attracting attention because it can prevent, for example, a phenomenon in which light that also has light source power is reflected by an intermediate optical system and returned to the light source. Since the optical isolator has the above-described action, it is disposed, for example, between a laser as a light source and an optical component.
  • the optical isolator includes a Faraday rotator, a polarizer disposed on the light incident side of the Faraday rotator, and an analyzer disposed on the light emitting side of the Faraday rotator.
  • the optical isolator has the property that when a magnetic field is applied to the Faraday rotator in parallel with the traveling direction of light and the light is incident on the Faraday rotator, the plane of polarization rotates in the Faraday rotator. That is, the Faraday effect is used. More specifically, of the incident light, light having the same polarization plane as the polarizer passes through the polarizer and enters the Faraday rotator. This light is emitted in the Faraday rotator after being rotated by, for example, +45 degrees with respect to the light traveling direction.
  • TAG single crystal terbium aluminum paramagnetic garnet single crystal
  • Patent Document 2 discloses a composition formula as a garnet crystal for a Faraday rotator.
  • Ln is an element selected from rare earth elements excluding Tb and Eu and Y
  • M 1 is an element selected from Ca, Mg, and Sr
  • M 2 is Al
  • It is an element selected from Ga, Sc, In, Ti, Si, and Ge.
  • a is a number between 0 and 0.5
  • b is between 0.3 and 0.6
  • c is between 0 and 0.02
  • d is between 0 and 0.3
  • e is a number between 0.01 and 0.3. It has been.
  • Patent Document 1 JP 2004-131369 A
  • Patent Document 2 Japanese Patent Laid-Open No. 2001-108952
  • the TAG single crystal obtained by the manufacturing method described in Patent Document 1 has a unit length of the paramagnetic material and a Werde constant indicating the magnitude of the Faraday rotation angle per unit magnetic field compared to other paramagnetic materials. Has the advantage of being very large.
  • the extinction ratio which is an index of ovalization when linearly polarized light passes through the Faraday rotator, was as small as about 22 dB. Therefore, when the TAG single crystal is used for an optical device such as an optical isolator, the extinction ratio of the entire optical isolator, that is, the I could't raise my ration.
  • the YIG ferromagnetic garnet single crystal containing Fe as an essential component described in Patent Document 2 has substantially zero transmittance in the visible light region of about 400 to 800 nm. In other words, it cannot be used as a magneto-optical device.
  • the present invention makes it possible to provide a magneto-optical device that has a high extinction ratio, particularly in the visible light region, and thus has an excellent extinction ratio, and increases the yield in manufacturing. It is intended to provide a paramagnetic garnet single crystal for a magneto-optical device and a magneto-optical device using the paramagnetic garnet single crystal for the magneto-optical device.
  • the present invention relates to a paramagnetic garnet single crystal having a structure in which Mg is added to Tb Al 2 O 3.
  • the present invention includes a force Tb and Al as Tb Al 2 O as main components and a paramagnetic component.
  • any material having a sex garnet structure may be used.
  • the ratio of Tb, Al and O in the case of a gannet structure is such that the molar ratio of 3: 5: 12 can be slightly shifted.
  • paramagnetic garnet single crystal of the present invention is a garnet single crystal substantially free of Fe.
  • the magneto-optical device of the present invention is characterized by being configured using a paramagnetic garnet single crystal for a magneto-optical device according to the first or second invention.
  • the paramagnetic garnet single crystal for the magneto-optical device is used as a Faraday rotator, and is disposed in front of the optical path of the Faraday rotator. Further comprising a polarizer and an analyzer disposed behind
  • an optical isolator is configured.
  • the paramagnetic garnet single crystal for magneto-optical devices according to the present invention has Mg in Tb Al 2 O 3.
  • Mg is converted to MgO and is contained at a ratio of 0.001-0.015 parts by weight.
  • a paramagnetic garnet single crystal for a magneto-optical device is a terbium 'aluminum-based paramagnetic garnet single crystal characterized by containing Mg in the above-mentioned specific proportion.
  • Mg is contained in the terbium site or aluminum site in the above-mentioned specific proportion.
  • Mg is contained in a proportion of 0.001 to 0.005 parts by weight in terms of MgO by adding Mg during the growth of a single crystal.
  • Tb Al O is 10
  • Mg is added at a rate of 0.01-0.15 parts by weight in terms of MgO with respect to 0 parts by weight, the Mg content in the resulting single crystal will be converted to MgO to be 0.001-0. 015 parts by weight. In other words, not all of the added Mg is contained in the obtained single crystal when growing the single crystal. Therefore, in the experimental examples described later, the amount added in the starting material is different from the Mg content in the obtained single crystal.
  • the viscosity is appropriately controlled, convection occurs, and the temperature gradient is steep. This is probably because the grown crystal is less likely to be distorted. For this reason, cracks occur during or after training 1, and it is considered that the yield is also increased.
  • the magneto-optical device according to the present invention is obtained using the paramagnetic garnet single crystal for a magneto-optical device obtained according to the present invention and having a sufficient extinction ratio as described above.
  • An excellent magneto-optical device can be provided.
  • the magnetic light A paramagnetic garnet single crystal for scientific devices is used as a Faraday rotator.
  • an optical isolator having a sufficiently large extinction ratio in the visible light region can be provided at low cost.
  • FIG. 1 is a perspective view showing a main part of an apparatus for growing a paramagnetic garnet single crystal for a magneto-optical device according to the present invention.
  • FIG. 2 is a schematic plan view of an apparatus for obtaining a paramagnetic garnet single crystal for a magneto-optical device according to the present invention.
  • FIG. 3 is a schematic plan view for explaining a main part of an apparatus for producing a paramagnetic garnet single crystal for a magneto-optical device according to the present invention.
  • FIG. 4 is a view showing the crystallinity of a paramagnetic garnet single crystal for a magneto-optical device of Example obtained in Experimental Example 1.
  • FIG. 5 is a schematic plan sectional view of the optical isolator fabricated in Experimental Example 2.
  • FIG. 6 is a cross-sectional view of the optical isolator shown in FIG. 5 taken along line x4—x4 in FIG.
  • FIG. 7 is a schematic plan cross-sectional view showing the main part of a modification of the optical isolator to which the present invention is applied.
  • FIG. 8 is a cross-sectional view taken along line xl-xl of FIG.
  • FIG. 9 is a schematic plan sectional view showing the main part of another modification of the optical isolator to which the present invention is applied.
  • FIG. 10 is a sectional view taken along line x 2 -x 2 in FIG.
  • FIG. 11 is a schematic plan cross-sectional view showing the main part of still another modification of the optical isolator to which the present invention is applied.
  • FIG. 12 is a sectional view taken along line x 3 -x 3 in FIG.
  • the molar ratio is 3: 5, Mg is converted to MgO, Ca is converted to CaCO, and
  • the laser FZ device 1 has an upper shaft 2a and a lower shaft 2b arranged to be spaced downward from the lower end of the upper shaft 2a.
  • the upper shaft 2a and the lower shaft 2b are movable in the vertical direction within the quartz chamber 13.
  • the chamber 13 is provided to enable adjustment of the atmosphere of the melt zone X for growing crystals between the lower end of the upper shaft 2a and the upper end of the lower shaft 2b.
  • the chamber 13 also serves as a heat sink.
  • FIG. 1 windows are provided on opposite side surfaces of the chamber 13, respectively.
  • Lenses 4a and 4b are attached to the windows.
  • the laser light emitted from the laser oscillator 5 is guided to the lenses 4 a and 4 b through the mirror 6.
  • the laser beam passes through the lenses 4a and 4b and is radiated to the fusion zone X.
  • FIGS. 1 and 3 show the lenses 4a and 4b, as shown in the schematic plan view of FIG. Also arranged. In other words, the laser beam was irradiated from four directions on the side of the band.
  • halogen lamps 7a to 7d are also arranged around the chamber 13 as other heat sources, and are heated by the halogen lamp and irradiated by the laser light. Heating was used together.
  • the columnar TAG crystal 8 produced as described above was suspended by using a jig at the lower end of the upper shaft 2a.
  • a seed crystal 9 made of a TAG single crystal was disposed at the upper end of the lower shaft 2b.
  • the atmosphere in the chamber 13 was changed to an atmospheric atmosphere, and heated by the laser oscillator 5, and the lamps 7a to 7d.
  • the laser beam from the laser oscillator 5 is melted at the lower end of the TAG polycrystal 8 disposed at the lower end of the upper shaft 2a, and the melted portion is melted.
  • the seed crystal 9 arranged at the upper end of the lower shaft 2b.
  • a fusion zone X was formed by irradiating the melt-bonded portion between the TAG polycrystal 8 and the seed crystal 9 with laser light.
  • the distance from the laser oscillator 5 to the portion where the TAG polycrystal 8 and the seed crystal 9 are held is about 5 cm.
  • a carbon dioxide laser oscillator capable of emitting a laser beam having a wavelength of 10.6 ⁇ m was used, and the output was set to 90 to: LOOW.
  • the shafts 2a and 2b were moved downward in the axial direction at a speed of 3 mmZ or less in a nitrogen atmosphere so that a single crystal having a diameter of 2.7 mm and a length of 40 mm was obtained.
  • the irradiation region of the laser beam is moved toward the TAG polycrystal body 8 side, and the melt located on the seed crystal 9 side in the melt zone X is cooled, Solidified. That is, the solidified portion gradually extended upward, and a single crystal could be manufactured.
  • Table 1 below shows the crack generation rate during the production of the single crystal.
  • occurrence rate of cracks crystals were grown four times using each TAG polycrystal of sample numbers 1-8. The ratio of the number of occurrences of cracks in the four growths was determined and used as the crack occurrence rate.
  • the obtained grown crystal was cut in the cross-sectional direction, the cut surface was polished, and the presence or absence of cracks was visually observed.
  • the optical transmittance of a single crystal as an evaluation sample was measured with an optical property evaluation apparatus (manufactured by Neoarks, product number: BH-M800SF).
  • a polarizer and an analyzer were placed on the outside of the entrance surface and exit surface of the single crystal as the obtained evaluation sample, respectively.
  • a Gran Thompson polarizer (extinction ratio is 50 dB) made by Calcite Co., Ltd. manufactured by Melles Griot was used.
  • Sample No. 8 in Table 1 below shows that Tb and A1 are mixed at a molar ratio of 3: 5, Tb oxide powder and Al oxide powder are weighed, and further 100 parts by weight of Tb Al 2 O 3 is added. In contrast, Ca
  • the polycrystalline material obtained in the same manner as Sample Nos. 1 to 7 was used, except that a starting material obtained by mixing CaO powder so that 0.05 parts by weight in terms of CaO was contained was used. It is an example.
  • the crystallinity of an evaluation sample single crystal obtained from the TAG polycrystal of sample number 4 shown in Table 1 was evaluated.
  • the cross section of the obtained single crystal was polished, and the reflection intensity was measured by the 4-crystal rocking curve method using Philips' X'prt.
  • the results are shown in Fig. 4.
  • the half-width of the (444) reflection of the TAG single crystal having high crystallinity was 17 Zarc seconds in the evaluation sample single crystal obtained with the sample number 4.
  • the half-width of (444) reflection was 27 Zarc seconds. Therefore, the inclusion of Mg effectively improves the crystallinity of the obtained single crystal.
  • the polycrystalline body of Sample No. 7 in which the addition ratio of Mg is 0.5 parts by weight in terms of MgO, that is, the Mg content is 0.05 parts by weight in terms of MgO is used.
  • a part of the grown crystal becomes the TbAlO phase, and there is a crack between the TbAlO phase and the TbAlO phase.
  • the force seed crystal using a TAG single crystal as the seed crystal 9 may be a TAG polycrystal.
  • Mg may be added by other methods by the force added by adding MgO to the TAG polycrystal as a raw material rod.
  • the liquid may be added by applying a liquid containing Mg to the TAG polycrystal as a raw material rod, or by immersing the TAG polycrystal as a raw material rod in a solution containing Mg.
  • the method is not limited to adding MgO powder to the raw material, and MgCO, MgCl, Mg
  • TAG is added to TAG in the polycrystal used as a raw material!
  • the composition of the TAG itself is not limited to Tb Al 2 O, but Tb and A1
  • a part thereof may be substituted with a rare earth element.
  • rare earth elements include Dy, Ho, Er, and Tm, and are not particularly limited. In this way, even if a part of Tb and Z or A1 is substituted with a rare earth element, the addition of Mg at the above specific ratio can suppress the formation of a heterogeneous phase having a TbAlO force, And effective high extinction ratio
  • Zr, Ca, Si, Bi, Hf, etc. may be mixed slightly from the raw material, cobblestones and containers used during pulverization, a sintering sheath, etc. is there.
  • an experimental example of an optical isolator using a garnet single crystal for a magneto-optical device according to the present invention will be described.
  • an optical isolator 31 as an embodiment of the magneto-optical device of the present invention shown in FIGS. 5 and 6 was produced.
  • the Faraday rotator 32 made of the single crystal obtained in Experimental Example 1 is arranged.
  • the Faraday rotator 32 had a diameter of 27 mm and a length of 40 mm.
  • the Faraday rotator 32 is inserted into the first magnet 33 and the other end is inserted into the second magnet 34. That is, as shown in FIG. 6, the first magnet 33 has a regular hexagonal cross section in the direction perpendicular to the optical axis P, and has a through hole 33a in the center.
  • the shape having the hexagonal cross section and the through-hole 33a is specifically formed by joining six neodymium iron element magnets each having a thin triangular prism shape with a thin adhesive. .
  • the second magnet 34 is also configured by joining six approximately triangular prism-shaped neodymium iron-boron magnets, and the second magnet 34 is also formed in the center like the first magnet 33. Has a through hole 34a having a diameter of 3 mm. One end of the Faraday rotator 32 is inserted into the through hole 33a and fixed to the other end force 34a at a depth of 1 mm.
  • the dimension of the regular hexagon is 10.4 mm on one side, and the dimension along the direction of the optical axis P of the first magnet 33 is 5.5 mm.
  • the second magnet 34 has the same dimensions as the first magnet 33.
  • the direction of the magnetic field applied by the first magnet 33 is as shown in FIG. 5. That is, in the first magnet 33, the direction of the magnetic field is such that the outer peripheral force is directed toward the through hole 33a. Force direction.
  • the direction of the magnetic field is a direction extending radially outward from the through hole 34a. Then, by providing the soft magnetic layer 38 on the outer peripheral surface of the first magnet 33 and the second magnet 34, six neodymium iron boron magnets having a substantially triangular prism shape are joined, and the first magnet 33 The second magnet 34 and the Faraday rotator 32 are integrated.
  • the soft magnetic material Ni—Fe alloy (specific permeability 3000) was used.
  • the arrow M shown in Fig. 5 indicates the direction of the magnetic field.
  • a polarizer 36 is disposed on the light incident side of the Faraday rotator 32, and an analyzer 37 is disposed on the exit side.
  • the polarizer 36 and the analyzer 37 those made of cubic calcite having a thickness of 10 mm were used.
  • the extinction ratio of the polarizer 36 and the analyzer 37 was 50 dB.
  • FIGS. 5 and 6 illustrate an optical isolator as an example of a magneto-optical device to which the present invention is applied
  • the magneto-optical device of the present invention is illustrated in FIGS. It is not limited to those having a structure.
  • FIGS. FIG. 7 and FIG. 8 are a plan view and a cross-sectional view taken along line xl-xl showing the main part of the optical isolator to which the present invention is applied.
  • the optical isolator 41 of this modification example uses cylindrical first and second magnets 43 and 44 instead of the first and second magnets 33 and 34 shown in FIG. 5 and FIG.
  • the structure is the same except that soft magnetic material layers 45 and 46 are provided on the inner peripheral surfaces of the through holes of the first and second magnets and the outer peripheral surfaces of the first and second magnets. Yes.
  • each of the first magnets 43 and 44 has circular through holes 43a and 44a at the center, and the soft magnetic layer 45 is provided on the inner peripheral surfaces of the through holes 43a and 44a.
  • a soft magnetic layer 46 made of Ni and Fe is provided on the outer peripheral surfaces of the columnar first and second magnets 43 and 44.
  • the optical isolator 31 shown in FIG. 5 is similarly polarized along the optical axis P at the front stage of the first magnet 33.
  • the analyzer is arranged after the second magnet 44.
  • the first and second magnets may have an integral cylindrical shape. Further, as described above, the soft magnetic layers 45 and 46 may be provided on the inner peripheral surface of the through hole and the outer peripheral surfaces of the first and second magnets.
  • a soft magnetic layer is similarly provided on the inner peripheral surfaces of the through holes 33a, 34a of the first and second magnets 33, 34. Also good.
  • the soft magnetic layer a Ni—Fe alloy, a Fe—Si alloy, Fe alone, or the like can be used.
  • the through hole can be a polygon as well as a circle!
  • FIG. 9 and FIG. 10 are a plan view showing still another modification of the main part of the optical isolator to which the present invention is applied and a cross-sectional view taken along line x 2 -x 2 in FIG. Optical isolator of this modification 5
  • the first magnet 53 and the second magnet 54 have a square cross section in a direction perpendicular to the optical axis P.
  • the shape of the first and second magnets 53 and 54 in the direction orthogonal to the optical axis P is not limited to a hexagon or a circle, and may be a square.
  • first and second magnets 53, 54 are each configured by connecting four permanent magnets having a substantially triangular prism shape.
  • soft magnetic layers 55 and 56 are formed on the inner peripheral surfaces of the through holes 53a and 54a and the outer peripheral surfaces of the first and second magnets 53 and 54.
  • 11 and 12 are a plan sectional view showing still another modification of the optical isolator and a sectional view taken along x3—x3 in FIG.
  • the first magnet 63 is joined to the magnet halves 63b and 63c via the soft magnetic layer 65.
  • a through hole 63a is provided in the center, and one end of the Faraday rotator is inserted.
  • the second magnet 64 also has a structure in which a pair of magnet halves are joined via a soft magnetic layer and a through hole 64a is provided in the center, and the other end of the Faraday rotator 32 is inserted. Yes.
  • a soft magnetic layer 66 is formed on the pair of outer surfaces of the first and second magnets 63 and 64.
  • the first and second magnets 63 and 64 may be formed by joining a plurality of permanent magnets using the soft magnetic layer. 7 to 12, the soft magnetic body is not necessarily provided. However, it is preferable to provide a soft magnetic material at the position shown in FIGS. 7 to 12 (the outer surface of the permanent magnet) because the strength of the magnetic field applied to the Faraday rotator is increased.
  • the magneto-optical device to which the present invention is applied is not limited to the optical isolator described above. That is, for example, the paramagnetic garnet single crystal for magneto-optical devices according to the present invention can be used for a waveguide type optical isolator. Furthermore, the present invention can be applied to various optical devices that can utilize the good Faraday rotation effect and extinction ratio of the paramagnetic garnet single crystal for magneto-optical devices according to the present invention.

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Abstract

Monocristal de grenat paramagnétique pour dispositifs magnéto-optiques qui non seulement excelle dans la translucidité de région visible mais peut également être produit à haute productivité sans exposition au craquage, et qui excelle dans le ratio d’extinction de région visible. Il est fourni un monocristal de grenat paramagnétique pour dispositifs magnéto-optiques, comprenant terbium et aluminium, dans lequel Mg est contenu dans le site Tb ou le site Al dans une proportion telle que 0,001 à 0,015 partie par masse, en termes de MgO, de Mg est contenu par 100 parties par masse de Tb3Al5O12.
PCT/JP2005/009988 2004-08-03 2005-05-31 Monocristal de grenat paramagnétique pour dispositif magnétooptique et dispositif magnétooptique Ceased WO2006013673A1 (fr)

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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7427577B2 (en) 2006-04-06 2008-09-23 Nanocerox Inc Sintered polycrystalline terbium aluminum garnet and use thereof in magneto-optical devices
WO2011132668A1 (fr) * 2010-04-20 2011-10-27 株式会社フジクラ Monocristal de type grenat, isolateur optique, et processeur optique
US9102673B2 (en) 2011-07-12 2015-08-11 Merck Sharp & Dohme Corp. Substituted pyrrolo[3,2-c]pyridines as TrkA kinase inhibitors

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001226196A (ja) * 2000-02-17 2001-08-21 Tokin Corp テルビウム・アルミニウム・ガーネット単結晶およびその製造方法
JP2002293693A (ja) * 2001-03-30 2002-10-09 Nec Tokin Corp テルビウム・アルミニウム・ガーネット単結晶及びその製造方法
JP2004131369A (ja) * 2002-08-22 2004-04-30 Murata Mfg Co Ltd テルビウム・アルミニウム系常磁性ガーネット単結晶の製造方法

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001226196A (ja) * 2000-02-17 2001-08-21 Tokin Corp テルビウム・アルミニウム・ガーネット単結晶およびその製造方法
JP2002293693A (ja) * 2001-03-30 2002-10-09 Nec Tokin Corp テルビウム・アルミニウム・ガーネット単結晶及びその製造方法
JP2004131369A (ja) * 2002-08-22 2004-04-30 Murata Mfg Co Ltd テルビウム・アルミニウム系常磁性ガーネット単結晶の製造方法

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7427577B2 (en) 2006-04-06 2008-09-23 Nanocerox Inc Sintered polycrystalline terbium aluminum garnet and use thereof in magneto-optical devices
US7592281B2 (en) 2006-04-06 2009-09-22 Nanocerox, Inc. Sintered polycrystalline terbium aluminum garnet and use thereof in magneto-optical devices
WO2011132668A1 (fr) * 2010-04-20 2011-10-27 株式会社フジクラ Monocristal de type grenat, isolateur optique, et processeur optique
RU2528669C2 (ru) * 2010-04-20 2014-09-20 Фуджикура Лтд. Монокристалл граната, оптический изолятор и оптический процессор
JP5611329B2 (ja) * 2010-04-20 2014-10-22 株式会社フジクラ ガーネット型単結晶、光アイソレータ及び光加工器
US9030739B2 (en) 2010-04-20 2015-05-12 Fujikura Ltd. Garnet single crystal, optical isolator and optical processor
US9102673B2 (en) 2011-07-12 2015-08-11 Merck Sharp & Dohme Corp. Substituted pyrrolo[3,2-c]pyridines as TrkA kinase inhibitors

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