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WO2006013119A1 - Capteur microstructure et son procede de production - Google Patents

Capteur microstructure et son procede de production Download PDF

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Publication number
WO2006013119A1
WO2006013119A1 PCT/EP2005/052469 EP2005052469W WO2006013119A1 WO 2006013119 A1 WO2006013119 A1 WO 2006013119A1 EP 2005052469 W EP2005052469 W EP 2005052469W WO 2006013119 A1 WO2006013119 A1 WO 2006013119A1
Authority
WO
WIPO (PCT)
Prior art keywords
layer
membrane
sensor
substrate
etching
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/EP2005/052469
Other languages
German (de)
English (en)
Inventor
Thorsten Pannek
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Robert Bosch GmbH
Original Assignee
Robert Bosch GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Robert Bosch GmbH filed Critical Robert Bosch GmbH
Publication of WO2006013119A1 publication Critical patent/WO2006013119A1/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
    • B81C1/00436—Shaping materials, i.e. techniques for structuring the substrate or the layers on the substrate
    • B81C1/00555—Achieving a desired geometry, i.e. controlling etch rates, anisotropy or selectivity
    • B81C1/00626—Processes for achieving a desired geometry not provided for in groups B81C1/00563 - B81C1/00619
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B2201/00—Specific applications of microelectromechanical systems
    • B81B2201/02—Sensors
    • B81B2201/0264—Pressure sensors
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B2203/00—Basic microelectromechanical structures
    • B81B2203/01—Suspended structures, i.e. structures allowing a movement
    • B81B2203/0127—Diaphragms, i.e. structures separating two media that can control the passage from one medium to another; Membranes, i.e. diaphragms with filtering function
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B2203/00—Basic microelectromechanical structures
    • B81B2203/03—Static structures
    • B81B2203/0315—Cavities
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C2201/00—Manufacture or treatment of microstructural devices or systems
    • B81C2201/01—Manufacture or treatment of microstructural devices or systems in or on a substrate
    • B81C2201/0101—Shaping material; Structuring the bulk substrate or layers on the substrate; Film patterning
    • B81C2201/0128—Processes for removing material
    • B81C2201/013—Etching
    • B81C2201/0135—Controlling etch progression
    • B81C2201/014—Controlling etch progression by depositing an etch stop layer, e.g. silicon nitride, silicon oxide, metal

Definitions

  • the invention relates to a microstructured sensor and a method for its production.
  • Such microstructured sensors may in particular be thermal sensors or temperature sensors. These can be z.
  • thermal sensors or temperature sensors can be z.
  • infrared sensors or spectroscopic gas sensors in which a temperature-sensitive measuring structure, e.g. a thermopile structure made of contact printed conductors, and an absorber layer covering this is applied for absorption of infrared radiation.
  • a temperature sensor can also serve as a side-crash sensor for measuring a temperature increase that occurs in the case of adiabatic compression of a trapped gas volume in a vehicle door.
  • pressure sensors or mass flow sensors relevant in which are formed on a self-supporting membrane measuring structures.
  • Surface micromechanical sensors are typically fabricated by a gas phase etching process using a silicon selectively etching gas, e.g. ClF3.
  • a silicon selectively etching gas e.g. ClF3.
  • the etching gas is passed through a perforated membrane layer formed on the substrate and a cavity is etched under the membrane in order to achieve thermal decoupling of the membrane from the bulk silicon of the substrate.
  • etching fronts are formed in the bottom region of the cavern as well as on their side surfaces, which are defined essentially by the crystal planes.
  • the etching process is largely isotropic. Since several etching openings are required in particular for large-surface membrane with surfaces> 0.5 mm 2 for complete undercut, run different, from the individual etching openings emanating etched fronts zu ⁇ together. At the intersections of the etched fronts corresponding peaks form, at which a preferred tearing of the thin membranes is possible. As a result, the stability and resilience of the membrane is impaired.
  • the membrane edge in which the self-supporting membrane is connected laterally is decoupled from the irregular etching flanks of the etching surfaces, so that the membrane stability is improved.
  • the decoupling can be done in different ways.
  • a lateral decoupling of the membrane edge and the upper edge of the etched side wall of the cavern is achieved.
  • the e.g. SiO2 sacrificial layer is after the cavern etching process step in an additional process step by supplying an etching gas not etching the silicon of the substrate, e.g. HF, removed.
  • the sidewall of the cavern is formed by a previously formed ring layer extending vertically into the substrate, so that the membrane edge is formed between this ring layer and a lower membrane layer.
  • the ring layer is not attacked by the etching gas during the etching process, so that no etching fronts are formed in the region of the membrane edge.
  • an annular trench or ring trench is first formed in the substrate, which is subsequently filled with a filling layer filling the same, wherein the filling layer furthermore keeps the substrate upper surface. surface covered between the ring layer. This region of the fill layer may subsequently be used as the lower membrane layer or removed to form other membrane layers.
  • any desired micromechanical sensors can be provided with a membrane, eg. As temperature sensors, in particular infrared sensors or spectroscopic gas sensors or side impact sensors, pressure sensors or mass flow sensors continue to be produced.
  • FIG. 1 shows a first process step after application of a sacrificial layer on a substrate
  • FIG. 2 shows a subsequent process step after formation of the membrane layer
  • FIG. 5 shows a subsequent process step after removal of the sacrificial layer
  • FIG. 6 shows a sensor according to the invention produced by closing the membrane according to this embodiment
  • FIGS. 7 to 13 describe a manufacturing method for a sensor according to a further embodiment with a ring trench:
  • FIG. 7 shows a first process step of forming an annular etching pit in the substrate
  • FIG. 10 shows a process document, which is provided as an alternative to FIG. 9 and follows FIG. 8, of the application of sensor structures on the filling layer;
  • FIG. 11 shows a process step following the perforation of the layer system above the substrate following FIG. 10;
  • FIG. 12 shows a subsequent process step of undercutting the membrane within the ring trench
  • FIG. 13 shows a state optionally following FIG. 12 on continuation of the etching process.
  • a sacrificial layer 2 of, for example, SiO 2 is deposited by means of, for example, CVD and structurally structured (in plan view).
  • the annularly structured sacrificial layer 2 in this case advantageously has the shape and approximate dimensions of the later membrane.
  • the etching flanks 2a or edges of the annular sacrificial layer 2 are preferably made flat, since the membrane to be formed will extend over these edges.
  • the annular sacrificial layer 2 may also be produced in a Local Oxidation of Silicon (LOCOS) process that produces a bird's beak profile correspondingly having very shallow flanks.
  • LOCOS Local Oxidation of Silicon
  • the thickness of the sacrificial layer 2 is preferably thin, for example in the range of 100 nm, but may also be listed up to several ⁇ m thick, in particular when a LOCOS method is used.
  • a sensor layer 3 with sensitive structures is produced as shown in FIG. It may be formed in particular of Si3N4 or SiO2; it is made of a material different from the material of the sacrificial layer 2
  • the sensor layer 3 is subsequently photolithographically patterned according to FIG. 3 both in the region on the sacrificial layer 2 and on the substrate 1.
  • a lacquer layer 4 is applied and openings 5 are formed by known photolithographic structuring, which extend through the lacquer layer 4 and the sensor layer 3 both to the sacrificial layer 2 and to the substrate 1.
  • the sensor layer 3 is undercut with a silicon etching medium, such as CIF 3 or XeF 2, by etching, by supplying the etching gas through the openings 5.
  • a silicon etching medium such as CIF 3 or XeF 2
  • the sacrificial layer 2 made of SiO.sub.2 or another material resistant to the etching gas, eg Si.sub.3N.sub.4, is not attacked in the case of the selectively etch-free etching process.
  • the annular sacrificial layer 2 is removed.
  • an etching gas eg HF, which etches the material of the sacrificial layer 2 through the openings 5, does not substantially etch the material of the sensor layer 3.
  • an annular lateral recess 9 is formed above the upper edge 10a of the side walls 10 of the cavity 6.
  • a self-supporting membrane 7 undercut by the cavern is formed, which is connected to the substrate 1 in a membrane edge 11, which lies in the lateral direction outside the upper edge 10a of the side wall 10. According to FIG. 5, the side wall 10 thus no longer directly adjoins the membrane 7 exposed by the cavity 6.
  • the side walls 10 and the bottom of the cavity 6 form the etching front during the etching of the cavity 6 in the substrate 1.
  • the lacquer layer 4 can subsequently be removed and a die
  • Openings 5 closing cover layer 12 are applied when a sensor 14 is to be formed with closed openings.
  • annular lateral incision or a laterally retracted membrane edge is formed in the upper wall region of the cavern in order to prevent cracking from the etching front into the membrane
  • the lateral enclosure of the later etching pit is first defined in the substrate 1 by removing silicon from the substrate 1 annularly around its area.
  • an annular trench 20 is formed in the substrate 1, which is preferably very narrow with a ring thickness of, for example, 0.1 to 10 .mu.m in order to be able to completely fill it again later.
  • the depth of the ring trench 20 is determined by the future depth of the cavern.
  • the ring trench 20 is subsequently filled with a material which is resistant to the etch medium used later for etching the grains, e.g. SiO2 or Si3N4.
  • a CVD method with good edge coverage is used to prevent plugging of the trench before it is completely filled.
  • a filling layer 22 is thus applied which has a ring layer 22a within the ring trench 20, a laterally inner surface layer 22b within the ring trench 20 on the surface 1a of the substrate 1, and a laterally outer surface layer 22c laterally outside the ring trench 20 - points.
  • the laterally inner surface view 22b may be included or removed in the formation of the membrane.
  • Fig. 9 first shows the alternative in which the laterally inner surface layer 22b within the ring layer 22a is formed by appropriate structuring, e.g. by etching with HF, is removed.
  • sensor layers can subsequently be applied to the substrate surface 1a.
  • one sensor layer 24 or even a plurality of sensor layers 24 are applied directly to the laterally inner surface layer 22b to form the sensor structures.
  • the layer 24, 22 b in the region in which the etching pit is to be created later is perforated as shown in FIG. 11 with the formation of openings 25 extending to the substrate 1.
  • the membrane 26 formed from the surface view 22b and the sensor layer 24 is undercut by passing through the openings 25 the etching gas, eg CIF3 or XeF2, is supplied.
  • the undercut can be made to varying degrees.
  • a cavity 29 is etched within the ring layer 22a, so that the ring layer 22a completely encloses the cavity 29 or forms its sidewall.
  • the bottom 28 of the cavity 29 is above or at the same height as the lower end of the ring layer 22a.
  • the etching process can be continued beyond the etching of the cavity 29 so that, as shown in FIG. 13, the cavity 30 extends beyond the depth of the ring layer 22a and the ring layer 22a is undercut.
  • the cavity 30 works on the basis of its extensive isotropy in the same way down as well as again toward the surface of the substrate 1 on. The etching is therefore stopped at the latest shortly before reaching the substrate surface. This results in a maximum etching depth of the cavity 30 of approximately twice the depth of the ring trench 20 or the ring layer 22a.
  • freestanding columns of the ring layer 22a thus arise which, depending on the etching depth, are more or less strongly connected to the surrounding bulk silicon of the substrate 1.
  • the diaphragm edge 27 is thus between the ring layer 22a and the lower membrane layer 22b or, if the lower membrane layer 22b according to FIG. 9 is removed, between the ring layer 22a and a subsequently applied membrane formed ranband. Subsequently, a cover layer can again be applied to the components shown in FIGS. 12 and 13, or the membrane 26 can be left with the openings 25.
  • thermopile structure can be made up of conductor tracks which are contacted with one another different materials with different Seeback coefficients auf ⁇ brought and subsequently applied an absorber layer of, for example, a metal oxide for the absorption of infrared radiation.
  • a bolometer structure with a structural element exposed to the radiation can be formed, the resistance of which changes as a function of its temperature and thus of the absorbed radiation.
  • a cover cover and, for example, a piezoresistive resistor can be applied and contacted.
  • the edges of the etching pit or cavern 29, 30 are no longer determined by the isotropic CIF3 etching with their peak formation, but by the geometry of the ring layer 22a or the previously formed ring trench 20.
  • Membrane geometries can be produced in largely arbitrary and very precise embodiments, even with isotropic etching processes.

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  • Physics & Mathematics (AREA)
  • Geometry (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Pressure Sensors (AREA)
  • Measuring Fluid Pressure (AREA)

Abstract

L'invention concerne un capteur microstructuré qui présente au moins: un substrat (1), une cavité (6) produite par attaque dans le substrat, une membrane (7) formée en porte-à-faux au-dessus de la cavité, fixée latéralement dans une arête de membrane (11) et présentant une couche de capteur (3) pourvue de structures de capteur, l'arête de membrane (11) étant séparée des surfaces d'attaque (10) de la cavité. Selon l'invention, l'arête de membrane est séparée des arêtes d'attaque irrégulières des surfaces d'attaque de sorte que la stabilité de la membrane est améliorée. A cet effet, l'arête de membrane (11) peut être formée dans un évidement latéral (9) de la paroi latérale (10) de la cavité (6) et être séparée de l'arête supérieure (10a) de la paroi latérale. En variante, la paroi latérale de la cavité peut être formée par une couche annulaire s'étendant verticalement. Cette dernière et une couche de membrane inférieure constituent les parties d'une couche de remplissage formée sur le substrat. L'arête de membrane est formée dans la couche de remplissage à la jonction entre la couche annulaire et la couche de membrane inférieure.
PCT/EP2005/052469 2004-07-31 2005-05-31 Capteur microstructure et son procede de production Ceased WO2006013119A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102004037304.3 2004-07-31
DE200410037304 DE102004037304A1 (de) 2004-07-31 2004-07-31 Mikrostrukturierter Sensor und Verfahren zu seiner Herstellung

Publications (1)

Publication Number Publication Date
WO2006013119A1 true WO2006013119A1 (fr) 2006-02-09

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PCT/EP2005/052469 Ceased WO2006013119A1 (fr) 2004-07-31 2005-05-31 Capteur microstructure et son procede de production

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DE (1) DE102004037304A1 (fr)
WO (1) WO2006013119A1 (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8419957B2 (en) 2007-04-26 2013-04-16 Robert Bosch Gmbh Method for producing a micromechanical component having a filler layer and a masking layer

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102015221193B4 (de) 2015-10-29 2018-05-03 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Vorrichtung zur Steuerung einer Intensität eines transmittierenden Anteils von auf die Vorrichtung einfallender elektromagnetischer Strahlung und Verfahren zur Herstellung der Vorrichtung
DE102020100244B4 (de) * 2020-01-08 2024-12-19 X-FAB Global Services GmbH Verfahren zur Herstellung eines Membran-Bauelements

Citations (9)

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US5998816A (en) * 1997-01-31 1999-12-07 Mitsubishi Denki Kabushiki Kaisha Sensor element with removal resistance region
US6250165B1 (en) * 1998-02-02 2001-06-26 Denso Corporation Semiconductor physical quantity sensor
WO2001072631A1 (fr) * 2000-03-24 2001-10-04 Onix Microsystems, Inc. Fabrication et liberation controlee de structures mettant en application des tranchees d'arret de gravure
EP1180494A2 (fr) * 2000-08-11 2002-02-20 Agere Systems Guardian Corporation Résonateurs à couches minces fabriqués sur des membranes manufacturées par évidement à partir de la face supérieure
US20020034878A1 (en) * 2000-09-21 2002-03-21 Mitsubishi Denki Kabushiki Kaisha Method of manufacturing semiconductor device and method of manufacturing infrared image sensor
US20020053242A1 (en) * 2000-07-06 2002-05-09 Yu-Chong Tai Surface-micromachined pressure sensor and high pressure application
EP1248366A1 (fr) * 2001-04-03 2002-10-09 STMicroelectronics S.A. Résonateur électromécanique à poutre vibrante
WO2003022732A2 (fr) * 2001-09-12 2003-03-20 Infineon Technologies Ag Procede de production d'une membrane
WO2004016547A1 (fr) * 2002-08-02 2004-02-26 Robert Bosch Gmbh Procede pour fabriquer un dispositif micromecanique, notamment un miroir oscillant micromecanique

Patent Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5998816A (en) * 1997-01-31 1999-12-07 Mitsubishi Denki Kabushiki Kaisha Sensor element with removal resistance region
US6250165B1 (en) * 1998-02-02 2001-06-26 Denso Corporation Semiconductor physical quantity sensor
WO2001072631A1 (fr) * 2000-03-24 2001-10-04 Onix Microsystems, Inc. Fabrication et liberation controlee de structures mettant en application des tranchees d'arret de gravure
US20020053242A1 (en) * 2000-07-06 2002-05-09 Yu-Chong Tai Surface-micromachined pressure sensor and high pressure application
EP1180494A2 (fr) * 2000-08-11 2002-02-20 Agere Systems Guardian Corporation Résonateurs à couches minces fabriqués sur des membranes manufacturées par évidement à partir de la face supérieure
US20020034878A1 (en) * 2000-09-21 2002-03-21 Mitsubishi Denki Kabushiki Kaisha Method of manufacturing semiconductor device and method of manufacturing infrared image sensor
EP1248366A1 (fr) * 2001-04-03 2002-10-09 STMicroelectronics S.A. Résonateur électromécanique à poutre vibrante
WO2003022732A2 (fr) * 2001-09-12 2003-03-20 Infineon Technologies Ag Procede de production d'une membrane
WO2004016547A1 (fr) * 2002-08-02 2004-02-26 Robert Bosch Gmbh Procede pour fabriquer un dispositif micromecanique, notamment un miroir oscillant micromecanique

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FUKANG JIANG ET AL: "Polysilicon structures for shear stress sensors", MICROELECTRONICS AND VLSI, 1995. TENCON '95, IEEE REGION 10, HONG KONG, 6-10 NOV. 1995, 6 November 1995 (1995-11-06), IEEE, NEW YORK, NY, USA, pages 12 - 15, XP010160107, ISBN: 0-7803-2624-5 *
KRONAST W ET AL: "Single-chip condenser microphone using porous silicon as sacrificial layer for the air gap", THE ELEVENTH ANNUAL INTERNATIONAL WORKSHOP ON MICRO ELECTRO MECHANICAL SYSTEMS, 1998, MEMS 98, PROCEEDINGS, HEIDELBERG, GERMANY 25-29 JAN. 1998, 25 January 1998 (1998-01-25), IEEE, NEW YORK, NY, USA, pages 591 - 596, XP010270265, ISBN: 0-7803-4412-X *

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8419957B2 (en) 2007-04-26 2013-04-16 Robert Bosch Gmbh Method for producing a micromechanical component having a filler layer and a masking layer

Also Published As

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