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WO2006006891A1 - Dispositif de structuration d'un champ electromagnetique - Google Patents

Dispositif de structuration d'un champ electromagnetique Download PDF

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Publication number
WO2006006891A1
WO2006006891A1 PCT/RU2005/000356 RU2005000356W WO2006006891A1 WO 2006006891 A1 WO2006006891 A1 WO 2006006891A1 RU 2005000356 W RU2005000356 W RU 2005000356W WO 2006006891 A1 WO2006006891 A1 WO 2006006891A1
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WO
WIPO (PCT)
Prior art keywords
radius
circle
circles
level
electromagnetic field
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Ceased
Application number
PCT/RU2005/000356
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English (en)
Inventor
Igor Nicolaevich Serov
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Npo 'aires Technologies' Obschestvo S Ogranichennoi Otvetstvennostju
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Npo 'aires Technologies' Obschestvo S Ogranichennoi Otvetstvennostju
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Publication of WO2006006891A1 publication Critical patent/WO2006006891A1/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B5/00—Optical elements other than lenses
    • G02B5/18—Diffraction gratings
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals

Definitions

  • the present invention relates generally to area of technical physics and, more particularly, can be used mainly in areas, where it is necessary to provide influence of structured electromagnetic field on various physical, chemical, and biological processes, for example, getting thin nanodimension films with a fractal structure, protection of biological objects against harmful influence of electromagnetic field of technogenic character, and so on.
  • a diffraction grating will transform a flat wave falling on it both into a set of flat waves extending from the grating under certain angles and into infinite superposition of surface waves, playing an essential role only adjacent to the grating.
  • the continuous waveguide waves exist, which interference results in sharp splashes on the dependences of peak factors of divergent shock waves upon frequency and parameters of said grating.
  • the interference of TEM and the first waveguide wave in the slits results in a resonant total reflection of energy.
  • Patent RU N°2231137 comprising a substrate made of dielectric material and/or semiconductor and/or metal whereupon a fractal topology is generated, which structure includes the fractal topology with a level of fractalization M not less than three, formed as follows: into structure of the first level fractalization module the 1+N circles of radius R enter, the center of the N circles each being located on the first circle, forming a central- symmetric figure, and the circle of radius 2R, which center coincides with center of the first circle, envelopes the N circles of radius R, the points of contact of circle of radius 2R with circles of radius R being the centers of layout of the first level fractalization modules, which are enveloped with the circle of radius 4R at the construction of the second level module, and a further topology is fractalized in the same way.
  • Such devices refer to a fractal matrix structurizator (hereafter referred to as FMS).
  • the purpose of the invention is to provide the device for structurization of an electromagnetic field with greater spatial area of influence that will allow using it for such purposes as structurization of a radiotelephone field, radiations of electron-beam tubes, and so on.
  • the technical result of the invention is the expansion of spatial area of the structured field localization.
  • the offered device for structurization of an electromagnetic field and the known device both contain a substrate whereupon a fractal topology is formed which structure includes the fractal topology with a level of fractalization M not less than three, formed as follows: into structure of the first level fractalization module the 1+N circles of radius R enter, the center of each of the N circles being located on the first circle, forming a central-symmetric figure, and the circle of radius 2R, which center coincides with center of the first circle, envelopes the N circles of radius R, the points of contact of circle of radius 2R with circles of radius R being the centers of layout of the first level fractalization modules, which are enveloped with the circle of radius 4R at the construction of the second level module, and a further topology is fractalized in the same way. But in the offered device unlike the known device the fractal topology on the substrate is formed using slits which width and depth are not less than 0,1 microns.
  • Fractal graphics represents a diffraction grating of complex design assembled from curvilinear closed elements formed by closed slits on which electromagnetic waves are spread as on a waveguides system.
  • interference of several not fading electromagnetic waves occurs.
  • Interference both TEM and the first waveguide wave results in resonant full reflection of energy [1] in said slits.
  • Resonant phenomena influence on the interference picture in a far zone and in a near one. This phenomenon can be treated as the expansion of a near zone in area of a far zone.
  • the diffracting element of minimal size and accordingly the wavelength of diffracting radiation will be defined by minimal size of the point of angle formed by the crossing of arcs of the circles.
  • a continuous set of diffracting elements will take place characterized by various geometrical features, starting from a submicron range (as minimal as possible wavelengths of diffraction spectrum lay over optical and ultraviolet ranges).
  • fractal graphics can consider as a continuous set of diffracting elements of different sizes up to the biggest one determined by FMS borders and lying already over millimetric range, the offered device refers to a broadband converter and a structurizator of an electromagnetic field in this range. It should be pointed out, that FMS even with not very dense graphics and the size of the slit in some microns will contain about 400000 diffracting elements located in orderly fashion, which provide various, ordered, intensive diffracting picture.
  • the minimal width of the slit equal of 0,1 micron is connected with the covered spectrum band of an electromagnetic radiation (0,1 micron - the wavelength in the ultraviolet). But as the experiment has shown, even at width of the slits equal 7 microns the whole spectrum of an optical range is structured. It is possible to explain that the minimally covered wavelength will be defined by not only slit parameters, but also the sizes of the sharpest angle in the offered fractal graphics.
  • the minimal depth of the slit equal of 0,1 micron is chosen empirically from the general physics reasons, namely the height of the stair as a diffracting element cannot be less than the wavelength of an electromagnetic radiation. At such depth the structured area reaches several centimeters.
  • the combination of features according to claim 2 characterizes the device in which through the points of crossing of the N circles of the first module at least one additional circle passes and in the said points the centers of the circles of radius equal to radius of said additional circle are located which are enveloped with the circle of radius equal to two radiuses of said additional circle, and further additional modules of the second, ... n level, where n does not exceed M, are generated.
  • the device is supplemented with one more fractal structure dependent on the first one. Not only the number of the ordered cells, but also the number of their kinds and the variety of their configurations increase, and this ensured that the resonant area essentially extends.
  • the combination of features according to claim 3, characterizes the device in which the substrate is executed from silicon.
  • Choice of the substrate material is of great importance only because of consumer properties of material. It is obvious that the more difference in density of the substrate and the environment, the greater will be diffracting structure efficiency. For example, the pair platinum-vacuum will be ideal. But it is important to take into account material availability and its price. Silicon has a reasonable price and can be quite used as the substrate in devices for structurization of a radiotelephone field, radiation of computer, etc.
  • the combination of features according to claim 4, characterizes the device in which the substrate is executed as a layered structure, and the top layer is executed as the semi- transparent mirror covering, providing reflection from the underlying layer.
  • the semi-transparent mirror covering introduces an additional element of structurization.
  • Each beam getting on the covering will be reflected twice (fig. 4): first time from the external surface, second time, penetrating into the covering with refraction from the border of the unit «a covering - a subsequent layer».
  • Figures 1-2 are examples of embodiments of topology of the device
  • Figure 3 is a topology of the module of the first level of fractalization
  • Figure 4 is a scheme of the rays path in the device made as a layered structure
  • Figures 5-8 are photos of the structured electromagnetic field generated by devices with various characteristics.
  • FIG. 1 an elementary kind of graphics carried out on a substrate is shown.
  • the centers of four circles with the same radius are located, and they are covered with the circle of radius 2R.
  • construction of the first level fractalization module is completed.
  • construction of the second fractal topology module derivative from the first one is shown.
  • the circle of radius Rd passes through the points of crossings of circles I 1 -4! of radius R, and in the same points the centers of the circles with radius Rd are located. Construction of the first level fractalization module is completed with construction of the circle of radius 2Rd. This variant of the embodiment is described in Claim 2.
  • the structures can be realized as follows: on the cleared substrate a resist layer either negative or positive is brought. In the resist layer the required image of graphics is formed by method of contact seal, or with help of multiplication and then the resist layer is subjected to action of developer resulting in removal of the not reacted layer of the resist. Then the resist layer is cured.
  • a film is coated on it proof to aggressive environment used at dry etching or to only ionic etching. Usually it is a metallic film. The additional requirement to said film is to keep film thickness smaller than resist layer thickness.
  • the resist layer is subjected to the lift off technology, during which the resist layer is removed together with the metallic film brought on it, and on the substrate the metallic film remains with generated fractal structure with opened sites of the substrate for dry etching.
  • the following stage is dry etching. Correlation between depth and width of the slits can run up to 6-10. The experiments confirming the structurization of an electromagnetic field were carried out with use of the nonmonochromatic light source.
  • the structured field runs from the substrate to 2 sm.
  • FIG. 1 Graphic topology is the same as in the previous case.
  • the material of the substrate is silicon.
  • the structured field runs from the substrate to 4 sm.
  • Figure 7. Graphic topology is the same as in the previous case.
  • the material of the substrate is glass and the evaporated film of nickel with thickness equal 0,1 micron.
  • the structured field runs from the substrate to 4 sm.
  • the material of the substrate is silicon and the evaporated film of nickel with thickness equal 0,1 micron.
  • the structured field runs from the substrate to 4 sm.

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  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Nanotechnology (AREA)
  • General Physics & Mathematics (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Biophysics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Aerials With Secondary Devices (AREA)
  • Diffracting Gratings Or Hologram Optical Elements (AREA)

Abstract

La présente invention relève d'une manière générale du domaine de la physique technique et peut être utilisée principalement dans des domaines pour lesquels il est nécessaire d'utiliser l'influence d'un champ électromagnétique structuré sur divers processus physiques, chimiques et biologiques, tels que l'obtention de couches minces de dimension manométrique présentant une structure fractale, la protection d'objets biologiques contre l'influence néfaste d'un champ électromagnétique de nature technogène, etc. Cette invention permet d'élargir la zone spatiale de localisation d'un champ structuré. Pour ce faire, cette invention utilise un substrat composé de matériau diélectrique et/ou de matériau semiconducteur et/ou de métal (structure métal-isolant-semiconducteur) sur lequel une topologie fractale est formée, laquelle structure comprend une topologie fractale présentant un niveau de fractalisation M au moins égal à trois formée comme suit: les cercles 1+N de rayon R entrent dans la structure du module de fractalisation de premier niveau, le centre de N cercles étant chacun situé sur le premier cercle, formant une figure centro-symétrique, et un cercle de rayon 2R, dont le centre coïncide avec le centre du premier cercle, enveloppe les N cercles de rayon R, les points de contact du cercle de rayon 2R et les cercles de rayon R constituant les centres d'agencement des modules de fractalisation de premier niveau, qui sont entourés d'un cercle de rayon 4R au niveau de la construction du module de second niveau, la topologie suivante étant fractalisée de la même manière. La topologie fractale sur le substrat est formée à l'aide de fentes dont la largeur et la profondeur sont au moins égales à 0,1 micron.
PCT/RU2005/000356 2004-07-02 2005-06-29 Dispositif de structuration d'un champ electromagnetique Ceased WO2006006891A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
RU2004120428/28A RU2249862C1 (ru) 2004-07-02 2004-07-02 Устройство для структурирования электромагнитного поля
RU2004120428 2004-07-02

Publications (1)

Publication Number Publication Date
WO2006006891A1 true WO2006006891A1 (fr) 2006-01-19

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WO (1) WO2006006891A1 (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
USD894908S1 (en) * 2018-05-28 2020-09-01 American Aires Inc. Electromagnetic radiation converter

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
RU2308065C1 (ru) * 2006-07-27 2007-10-10 Игорь Николаевич Серов Устройство для преобразования электромагнитного поля в когерентную форму
RU2312384C1 (ru) * 2006-09-25 2007-12-10 Игорь Николаевич Серов Устройство для преобразования электромагнитного излучения в когерентную форму

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3936195A1 (de) * 1988-11-17 1997-03-06 Alsthom Cge Alcatel Struktur zur Absorption elektromagnetischer Wellen
WO1999025044A1 (fr) * 1997-11-07 1999-05-20 Nathan Cohen Antenne a plaque a microbande dotee d'une structure fractale
WO2001054221A1 (fr) * 2000-01-19 2001-07-26 Fractus, S.A. Lignes de transmission, resonateurs, filtres et elements reseau passifs fractals et de remplissage de l'espace
RU2231137C1 (ru) * 2002-11-04 2004-06-20 Фонд развития новых медицинских технологий "АЙРЭС" Устройство защиты человека от электромагнитного излучения

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
RU2117497C1 (ru) * 1997-01-13 1998-08-20 Ленар Марсович Вильданов Способ защиты человека от электромагнитного излучения
RU9999U1 (ru) * 1998-01-22 1999-05-16 Евгений Александрович Ковалев Устройство для защиты организма от воздействия негативных факторов внешней среды "биологос"
RU2167678C1 (ru) * 2000-02-29 2001-05-27 Шубин Валентин Евгеньевич Устройство защиты от энергетических воздействий радиотелефона

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3936195A1 (de) * 1988-11-17 1997-03-06 Alsthom Cge Alcatel Struktur zur Absorption elektromagnetischer Wellen
WO1999025044A1 (fr) * 1997-11-07 1999-05-20 Nathan Cohen Antenne a plaque a microbande dotee d'une structure fractale
WO2001054221A1 (fr) * 2000-01-19 2001-07-26 Fractus, S.A. Lignes de transmission, resonateurs, filtres et elements reseau passifs fractals et de remplissage de l'espace
RU2231137C1 (ru) * 2002-11-04 2004-06-20 Фонд развития новых медицинских технологий "АЙРЭС" Устройство защиты человека от электромагнитного излучения

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
USD894908S1 (en) * 2018-05-28 2020-09-01 American Aires Inc. Electromagnetic radiation converter

Also Published As

Publication number Publication date
RU2249862C1 (ru) 2005-04-10

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