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WO2006005116A1 - Electrodes formees par laser pour photopiles - Google Patents

Electrodes formees par laser pour photopiles Download PDF

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Publication number
WO2006005116A1
WO2006005116A1 PCT/AU2005/001006 AU2005001006W WO2006005116A1 WO 2006005116 A1 WO2006005116 A1 WO 2006005116A1 AU 2005001006 W AU2005001006 W AU 2005001006W WO 2006005116 A1 WO2006005116 A1 WO 2006005116A1
Authority
WO
WIPO (PCT)
Prior art keywords
metal
semiconductor
openings
solar cell
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/AU2005/001006
Other languages
English (en)
Inventor
Jiun-Hua Guo
Peter John Cousins
Jeffrey Ellis Cotter
Malcolm David Abbott
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NewSouth Innovations Pty Ltd
Unisearch Ltd
Original Assignee
NewSouth Innovations Pty Ltd
Unisearch Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from AU2004903768A external-priority patent/AU2004903768A0/en
Application filed by NewSouth Innovations Pty Ltd, Unisearch Ltd filed Critical NewSouth Innovations Pty Ltd
Publication of WO2006005116A1 publication Critical patent/WO2006005116A1/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/13—Photovoltaic cells having absorbing layers comprising graded bandgaps
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H10F77/206—Electrodes for devices having potential barriers
    • H10F77/211—Electrodes for devices having potential barriers for photovoltaic cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H10F77/206—Electrodes for devices having potential barriers
    • H10F77/211—Electrodes for devices having potential barriers for photovoltaic cells
    • H10F77/215—Geometries of grid contacts
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/70—Surface textures, e.g. pyramid structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/70—Surface textures, e.g. pyramid structures
    • H10F77/703—Surface textures, e.g. pyramid structures of the semiconductor bodies, e.g. textured active layers
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

Definitions

  • the present invention relates broadly to a method for forming electrodes for solar cells, and to a solar cell.
  • the contacts need to be sufficiently "large” and continuous to provide good ohmic contacts along the contact grid, which typically includes a grid of conductor fingers for the p-contact and n-contact electrodes.
  • a method of forming electrodes for solar cells comprising depositing a dielectric layer on a surface of a semiconductor layer of the solar cell, laser ablating the dielectric layer to form a series of openings, each opening extending through the entire thickness of the dielectric layer, forming doped semiconductor regions in the regions of the underlying semiconductor layer exposed in the openings; forming metal- semiconductor electrical contacts in the respective openings, wherein deposited metal is in contact with the formed doped semiconductor regions through the respective openings and forming a metal contact electrically interconnecting the metal- semiconductor contacts, wherein the metal contact is formed such that the respective openings are filled with metal through the entire thickness of the dielectric layer and the metal interconnects adjacent metal-semiconductor contacts.
  • the laser ablating may be performed such that portions of the semiconductor layer of the solar cell substantially underneath the openings are ablated to form pits, and the metal-semiconductor electrical contacts are formed such that the pits are filled with metal and the metal is in electrical contact with the sidewalls of the pits adjoining the underlying semiconductor layer of the solar cell.
  • the laser ablating may be performed such that portions of the semiconductor layer of the solar cell substantially underneath the openings are melted and recrystallised, thereby dissolving or evaporating the dielectric layer, and the metal- semiconductor electrical contact is formed such that the openings are filled with metal and the metal is in electrical contact with the u ⁇ derlying semiconductor layer of the solar cell.
  • An electrical connection may be formed to either an emitter layer or a base layer of the solar cell.
  • the forming of the doped semiconductor regions may be performed prior to filling the openings or pits with the metal.
  • the dielectric layer, or a deposited ancillary layer may comprise dopant atoms, and the doping of the surface regions of the semiconductor layer comprises melting the surface regions of the semiconductor layer during the ablating of the dielectric layer such that portions of the dielectric layer or the ancillary layer containing the dopant atoms dissolve in the molten surface regions and reforms as a doped semiconductor layer upon recrystallisation.
  • the ancillary layer may comprise dopant atoms and is deposited over the dielectric layer after the formation of the openings and the method further comprises a subsequent thermal heating step to diffuse dopants from the ancillary layer into the underlying semiconductor layer forming either n-type or p-type polarity doped regions.
  • Dopant atoms may also be introduced by other techniques such as ion implantation or solid state diffusion whereby the dielectric layer forms a barrier against diffusion and confines the introduction of dopant atoms to the exposed areas.
  • the metal-semiconductor electrical contacts may be formed by a metal plating deposition process comprising utilising the dielectric layer as a mask layer to confine the metal-semiconductor contact area to the openings.
  • the metal-semiconductor electrical contacts may be formed by a screen or stencil printed metal deposition process.
  • a different metal may be used for the forming of the metal-semiconductor electrical contacts and the metal contact.
  • the metal contact interconnecting the metal-semiconductor contacts may form an electrode grid finger, or an electrode grid busbar or an electrode grid pad for connection to other solar cells and solar modules, or an emitter pad of the solar cell.
  • grooves Prior to the deposition of the dielectric layer, grooves may be formed in the surface of the semiconductor layer, and the subsequently formed openings are formed at the bottoms of the respective grooves.
  • a light-sensitive activator may be deposited on the dielectric layer prior to deposition of a metal material that forms the metal contact, and the activator is activated utilising the laser after the formation of the openings in the areas between the openings or pits, thereby allowing the deposition of the metal material to form the metal contact.
  • the semiconductor layer may comprise silicon.
  • a solar cell comprising a dielectric layer on a surface of a semiconductor layer of the solar cell, a series of laser-formed openings formed in the dielectric layer, each opening extending through the entire thickness of the dielectric layer, doped semiconductor regions formed in the openings, metal-semiconductor electrical contacts in the respective openings, wherein deposited metal is in contact with the doped semiconductor regions through the respective openings, and a metal contact electrically interconnecting the metal-semiconductor contacts, wherein the metal contact is formed such that the respective openings are filled with metal through the entire thickness of the dielectric layer and the metal interconnects adjacent metal- semiconductor contacts.
  • the solar cell may further comprise pits in the semiconductor layer of the solar cell substantially underneath the openings, and the metal contact is formed such that the pits are filled with metal.
  • An electrical connection may be made to either an emitter layer or a base layer of the solar cell.
  • the metal contact interconnecting the metal-semiconductor contacts may form an electrode grid finger, or an electrode grid busbar or an electrode grid pad for connection to other solar cells and solar modules, or an emitter pad of the solar cell.
  • Either one of an emitter metal electrode and a base metal electrode may be formed on either the top or bottom surfaces of the solar cell or both the emitter and base electrodes are formed on the top surface or on the bottom surface.
  • the metal contact may be formed according to a method as defined in the first aspect.
  • the semiconductor layer may comprise silicon.
  • Figure 1 shows a schematic, perspective view of a solar cell design in accordance with an embodiment of the present invention.
  • Figure 2 shows a schematic rear view of the solar cell design of Figure 1.
  • Figure 3 (a) is a schematic diagram illustrating processing steps for fabrication of electrodes in an example embodiment.
  • Figure 3 (b) shows a microscopic image of a pattern of small pits formed in the surface of a silicon solar cell in an example embodiment.
  • Figure 4 (a) is a schematic diagram illustrating processing steps for fabrication of small-area contacts and grid electrode fingers whereby the doped semiconductor regions are formed automatically during the small-area formation process in an example embodiment.
  • Figure 4 (b) shows a microscopic image of a series of small-areas formed thusly in a dielectric coating in an example embodiment.
  • Figure 5 is a schematic view of a solar cell design in another embodiment of the present invention whereby screen or stencil printed metallization is used to form the interconnection of the small-area contacts.
  • Figure 6 (a) is a schematic drawing illustrating laser-doped emitter contact openings and laser-doped base contacts in an example embodiment.
  • Figure 6 (b) is a schematic drawing illustrating the laser-doped emitter contact and laser-doped base contact finger after metallisation.
  • Figures 7 (a) to (c) are schematic cross-sectional diagrams illustrating processing steps for a two-step groove formation process in an example embodiment.
  • Figure 8 show the current-voltage characteristic curve of a prototype device in an example embodiment.
  • Figure 9 shows a microscopic image of a prototype device in an example embodiment.
  • FIG. 1 shows a schematic, perspective view of a solar cell design 100 in an embodiment of the present invention.
  • the solar cell 100 comprises an n-type or p-type Czochralski (Cz) silicon wafer 102, having a passivated, pyramid texture 104 formed on the front and back surfaces thereof and a diffused pn-junction 120 at the rear surface.
  • Cz Czochralski
  • the solar cell design 100 further comprises grid electrodes, e.g. 106 for p-type connection, and grid electrodes, e.g. 108 for n-type connection.
  • Small-area p-type diffused regions, e.g. 110 are formed in the n-type silicon wafer 102 near the rear surface thereof, and in electrical contact with the planar emitter layer 122 of the solar cell and the small-area electrodes, of typically about 300 to about 2000 square microns, for p-type connections, e.g. 106.
  • n-type silicon wafer 102 are formed in the n-type silicon wafer 102 near the rear surface thereof, and in electrical contact with the base layer of the solar cell - in the example embodiment, the n-type silicon wafer 102 - and the small-area grid finger electrodes for n-type connections, e.g. 108.
  • Figure 2 shows a schematic rear view of the n-type silicon wafer 102 with the p- contact electrode connections e.g. 106 and n-contact electrode connections e.g. 108.
  • Figure 3 (a) there are schematically illustrated processing steps for fabrication of the small-area electrode connections e.g. 106 or 108 ( Figure 1) in the example embodiment.
  • a dielectric coating 300 is deposited on the rear surface of a n-type silicon wafer 302.
  • a series of spaced laser pulses is then utilised to ablate the dielectric coating 300 and underlying portions of the silicon wafer 302. Residual slag and damage to the underlying silicon created during the ablation process is then removed from the pits e.g. 304 using a chemical etching process.
  • ablated pits e.g. 304 are not contiguous, unlike in previous techniques where a series of larger, closely spaced laser pulses is used to ablate the silicon, forming a contiguous line of pits, which is referred to as a groove.
  • Figure 3 (b) shows a microscopic image of a serial pattern of small pits e.g. 310 formed in the surface of a silicon solar cell, eg. 312, in an example embodiment.
  • regions of heavy doping e.g. of a range from about 5 to about 15 ohms per square, of either n-type or p-type polarity, are formed in the surface regions e.g. 305 of the ablated pits e.g. 304 in the example embodiment, allowing electrical contact to either of the emitter layer 307 or the base layer 302 of the solar cell structure.
  • the p-contact (emitter layer 307 in the example embodiment) electrode contacts a heavily doped p-polarity region e.g. 305 is formed in the pits e.g. 304.
  • n-type polarity region e.g. 309 is formed in the pit e.g. 311.
  • Different known techniques may be used to achieve the p- or n-polarity region accordingly.
  • the formation of the p-type contact in one embodiment of the present invention will be described below with reference to Figures 4 (a) and (b).
  • a key advantage of this technique in the example embodiment is that the initial laser-formed openings and corresponding pits e.g. 304 lead to a much smaller total metal-semiconductor interface area on the solar cell compared to the previous laser groove technique.
  • Another key advantage of this technique in the example embodiment is that the semiconductor regions under the metal are heavily doped. As such, the recombination usually associated with the metal-to-semiconductor interface is made significantly smaller and this leads to higher output voltages for the solar cell.
  • a suitable metal deposition process such as screen printing is applied to fill the pits with metal and interconnect the individual openings to form a contiguous electrode.
  • the pits e.g. 304 are filled with the metal to form electrical contact to the underlying metal-to-semiconductor interface and the printing mask (not shown) is designed to interconnect the openings to form a contiguous electrode finger 306.
  • metal is deposited by a plating process, whereby the metal is deposited first inside the small pits e.g. 304, filling the pit completely. Additional metal is also deposited in the regions between the pits e.g. 304, eventually interconnecting them to form a contiguous electrode finger.
  • the dielectric coating 400 contains suitable p-dopant atoms.
  • a series of spaced laser pulses is used to melt the dielectric coating 400 in dot type regions e.g. 402, thereby dissolving or evaporating the dielectric coating 400.
  • some of the dielectric coating 400 material dissolves into regions of molten silicon e.g. 404 underneath the dot 402, and is incorporated into the silicon as it recrystallises, thus forming a p-polarity region e.g. 404 in the n-type wafer 406.
  • a n-polarity region suitable for the n-type contact is formed by a similar process.
  • the silicon will melt to a depth that is sufficient to extend through a surface diffused region (for example 412) and the heavily diffused region that forms will also extend the through the diffused region to make electrical contact to the underlying semiconductor layer 406.
  • a surface diffused region for example 412
  • the heavily diffused region that forms will also extend the through the diffused region to make electrical contact to the underlying semiconductor layer 406.
  • contact to either one of the surface diffused region or the base layer region, for example semiconductor layer 406, will be facilitated.
  • an ancillary layer containing suitable dopant atoms may be deposited on top of the dielectric coating prior to the laser ablating. During the laser ablating, some of the ancillary layer material dissolves into regions of molten silicon and is incorporated into the silicon as it recrystallises.
  • an ancillary layer containing suitable dopant atoms may be deposited on top of the dielectric coating after the laser ablating.
  • dopants from the ancillary layer diffuse into the semiconductor layer, thereby forming a heavily doped region in the semiconductor regions exposed in the openings or pits.
  • dopant atoms may also be introduced by other techniques such as ion implantation or solid state diffusion whereby the dielectric layer forms a barrier against diffusion and confines the introduction of dopant atoms to the exposed areas.
  • Figure 4 (b) shows a microscopic image of laser-formed openings e.g. 412 formed in a dielectric coating 414 on a rear surface of an n-type silicon wafer (not shown).
  • the solar cell fabrication process is additionally simplified by eliminating two processing steps in the fabrication sequence.
  • two processing steps are required subsequent to the laser ablation groove formation.
  • the first is a chemical etching process to remove the slag by-product and damage formed during ablation.
  • the second is a solid-state diffusion of dopant atoms into the walls of the groove, forming either p-doped silicon region (for the cathode connection) or and n-doped silicon region (for the anode).
  • the diffused regions are necessary for previous high-performance devices.
  • a suitable metal deposition process such as screen printing is applied to fill the pits with metal and interconnect the individual openings to form a contiguous electrode.
  • the openings e.g. 402 are filled with the metal to form electrical contact to the underlying silicon layer and the printing mask is designed to interconnect the metal in the contact openings to form a contiguous electrode finger 410.
  • the screen or stencil printed metallisation 500 is formed over a dielectric layer 502 in which laser-formed openings or contact openings e.g. 504 are formed in a similar manner as described for the previous embodiment with reference to Figures 4 (a) and (b).
  • the contact areas e.g. 506 corresponding to the openings 504 can be separately diffused using known techniques for buried contact solar cells or laser diffused in accordance with the previous embodiments described above with reference to Figures 3 (a) and (b) and 4 (a) and (b).
  • the use of printed metallisation in this example embodiment has the advantages of allowing the laser-formed contact openings to be spaced at any arbitrary distance.
  • the use of printed metallization in this example embodiment also has the advantage that, by the use of the heavily diffused regions in the openings, the requirements on the metal pastes are relaxed in terms of providing high conductance and low contact resistance, and that both electrodes may be deposited in a single printing step using a single type of metal paste, reducing the cost and complexity of manufacture.
  • Printed metallization is also a well understood and inexpensive metal deposition technique, and application of printed metallization to solar cell contacting can thus provide additional advantages such as reducing costs and reducing complexity of the fabrication process.
  • a small-area contact finger can be extended in other embodiments to replace the planar emitter region (e.g. 122, Figure 1) of the solar cell with a series of widely spaced, small-area openings formed by the laser process and with a suitable technique for the diffusion of n-type or p-type dopants, as described above with reference to Figures 3 (a) and 4 (a).
  • the p-type emitter is formed by an array of closely spaced, small-area diffusions e.g. 600 that are subsequently electrically connected together by a screen or stencil printing metal deposition of metal, or by the metal overplating process to form a plurality of interconnected, small-area emitters e.g. 602, as illustrated in Figure 6 (b).
  • the total area of the emitter is reduced, and contributes to reduce the overall recombination in the solar cell, thus improving efficiency.
  • n-type base contacts e.g. 604 formed in a manner as illustrated in Figure 5 (a).
  • n-type electrode grid fingers e.g. 606 are formed by the overplating process.
  • larger area small-area emitter pads e.g. 610 are formed by the overplating process.
  • the laser-formed contact openings can be placed close enough together to form a contiguous laser-line, much like the previous techniques for buried contact solar cells, except that the laser-line does not form a contiguous groove.
  • the laser-formed lines can be separately diffused, using known techniques for buried contact solar cells, or laser diffused as described for the previous embodiments above.
  • the metallisation can be applied using the known techniques for buried contact solar cells, or by aligned screen or stencil printing. If plated metallisation is utilised, in such an embodiment the laser-line has the advantage of not requiring substantial over-plating to form the contiguous metal fingers, and thus can allow very narrow metal fingers to be formed.
  • Such an embodiment has applications for solar cells where one of the metal electrode patterns is formed on the front surface of the solar cell.
  • the small-area technique may also be implemented as a 2-step groove formation processing.
  • One such example embodiment will now be described, with reference to Figures 7 (a) to (c).
  • two laser processing steps are combined to form an advanced laser groove pattern with many of the benefits mentioned for the previously described embodiments.
  • laser grooves e.g. 700 are initially formed in the silicon wafer 702 by the ablation process previously described.
  • a second pass of the laser is made to form an opening e.g. 706 at the bottom of the original groove e.g.
  • the opening e.g. 706 can either be a line along the bottom of the groove e.g. 700 or a string of laser contact openings.
  • the groove e.g. 700 will help to confine the overplating to the direction of the string of openings, aiding in forming the contiguous metal finger 708 and maintaining a narrow electrode finger profile at the same time.
  • the concept of this embodiment can be applied in several ways, including forming laser lines at the bottom of grooves, forming small-area laser openings at the bottom of the grooves (both as described above) and small-area forming laser openings at the bottom of pits.
  • forming laser lines at the bottom of grooves forming small-area laser openings at the bottom of the grooves (both as described above) and small-area forming laser openings at the bottom of pits.
  • By taking advantage of a short focal length final objective lens for the laser it may also be possible to form openings in dielectric coating at the top or bottom of surface features of the solar cell, such as e.g. pyramid textures.
  • a light-sensitive activator is placed on the surface of the solar cell before the formation of the small-area contacts.
  • the laser forms a string of widely spaced small-area contacts as described for the previous embodiments above.
  • the laser is adjusted so as to activate the surface of the solar cell to allow the subsequent deposition of a layer of metal onto the protective dielectric by a plating process.
  • the protective dielectric prevents deposition of the metal except where it has been previously activated.
  • This embodiment allows the widely spaced small-area contacts to be joined up by the metal deposition step.
  • Activation could be achieved by a number of techniques, including inducing buried charge within the dielectric layer (thereby activating it), by a photo-induced chemical reaction in the activator, and by a photo-induced reaction between the dielectric and a separate activator (e.g. aluminium on silicon dioxide, whereby the aluminium reduces the silicon dioxide, leaving a silicon rich surface after removal of the aluminium and alumina.
  • the silicon-rich layer serves as the nucleation site for plating).
  • Figure 8 shows the current-voltage characteristic curve 800 of a prototype device embodiment.
  • Open circuit voltages for the first batch of prototype devices were found to be excellent, at around 670 mV and short-circuit current was found to be adequate given the device structure (no texturisation on the front surface, SiO 2 single-layer antireflection coating). It can be expected that with proper texturisation, anti-reflection coating, hydrogen surface passivation, and by minimising the shunt and series parasitic losses, an efficiency of 21% or greater is possible.
  • Figure 9 shows a microscopic image of one of the working prototypes 900.
  • the present invention is not limited to silicon solar cells, but also applies to other suitable semiconductor material solar cells.

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  • Photovoltaic Devices (AREA)

Abstract

L'invention concerne un procédé de formation d'électrodes pour photopiles. Ce procédé consiste à: appliquer une couche diélectrique (300) sur la surface d'une couche à semiconducteurs (302) de la photopile; ablater au laser la couche diélectrique pour former une série de fenêtres (304) traversant chacune la totalité de l'épaisseur de la couche diélectrique (300); former des régions dopées (305) dans la couche à semiconducteurs visible à travers les fenêtres; former des contacts électriques métal-semiconducteur dans les fenêtres respectives, le métal déposé étant en contact avec les régions de semiconducteurs dopées (305) formées à travers les fenêtres respectives; former un contact métallique (306) qui assure l'interconnexion électrique entre les contacts métal-semiconducteur, le contact métallique étant formé de manière à remplir de métal les fenêtres respectives (304) sur la totalité de l'épaisseur de la couche diélectrique (300) et à mettre en contact le métal et les contacts métal-semiconducteur.
PCT/AU2005/001006 2004-07-08 2005-07-08 Electrodes formees par laser pour photopiles Ceased WO2006005116A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
AU2004903768 2004-07-08
AU2004903768A AU2004903768A0 (en) 2004-07-08 Laser-formed Electrodes for Solar Cells

Publications (1)

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WO2006005116A1 true WO2006005116A1 (fr) 2006-01-19

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Cited By (16)

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WO2007059551A1 (fr) * 2005-11-24 2007-05-31 Newsouth Innovations Pty Limited Structure de contact métallique déposée par sérigraphie de faible surface et procédé correspondant
DE102008013445A1 (de) * 2008-02-15 2009-08-27 Ersol Solar Energy Ag Verfahren zur Herstellung monokristalliner Silizium-Solarzellen mit rückseitigen Emitter- und Basiskontakten sowie Solarzelle, hergestellt nach einem derartigen Verfahren
DE102008017647A1 (de) * 2008-04-04 2009-10-29 Centrotherm Photovoltaics Technology Gmbh Verfahren zur Herstellung einer Solarzelle mit einer zweistufigen Dotierung
DE102008020796A1 (de) * 2008-04-22 2009-11-05 Q-Cells Ag Rückseitenkontakt-Solarzelle und Verfahren zu deren Herstellung
DE102008028104A1 (de) * 2008-06-13 2009-12-24 Deutsche Cell Gmbh Metallisierungsverfahren für Solarzellen
WO2010091466A1 (fr) * 2009-02-11 2010-08-19 Newsouth Innovations Pty Limited Structure de dispositif photovoltaïque et procede associe
WO2010039498A3 (fr) * 2008-09-30 2011-04-14 Apple Inc. Ensemble intégré de détection tactile et solaire
US8153890B2 (en) 2005-11-24 2012-04-10 Newsouth Innovations Pty Ltd. Low area screen printed metal contact structure and method
CN102496643A (zh) * 2011-12-09 2012-06-13 深圳市创益科技发展有限公司 一种低压大电流硅基薄膜太阳能电池及其制备方法
WO2012090641A1 (fr) * 2010-12-29 2012-07-05 三洋電機株式会社 Cellule solaire
GB2499192A (en) * 2012-02-02 2013-08-14 Rec Cells Pte Ltd Method for producing a solar cell with a selective emitter
CN103296106A (zh) * 2012-02-23 2013-09-11 Lg电子株式会社 太阳能电池模块
US8921148B2 (en) 2010-01-14 2014-12-30 Dow Global Technologies Llc Moisture resistant photovoltaic devices with exposed conductive grid
US9059349B2 (en) 2010-02-09 2015-06-16 Dow Global Technologies Llc Moisture resistant photovoltaic devices with improved adhesion of barrier film
CN110838443A (zh) * 2019-11-20 2020-02-25 浙江正邦电子股份有限公司 一种电力半导体芯片电极制作方法
CN118472064A (zh) * 2024-07-15 2024-08-09 通威太阳能（成都）有限公司 金半接触结构、太阳电池及光伏组件

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WO2010091466A1 (fr) * 2009-02-11 2010-08-19 Newsouth Innovations Pty Limited Structure de dispositif photovoltaïque et procede associe
US10199523B2 (en) 2009-02-11 2019-02-05 Newsouth Innovations Pty Limited Photovoltaic device structure and method
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CN118472064A (zh) * 2024-07-15 2024-08-09 通威太阳能（成都）有限公司 金半接触结构、太阳电池及光伏组件

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