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WO2006003594A3 - Soft lithographic stamp with a chemically patterned surface - Google Patents

Soft lithographic stamp with a chemically patterned surface Download PDF

Info

Publication number
WO2006003594A3
WO2006003594A3 PCT/IB2005/052113 IB2005052113W WO2006003594A3 WO 2006003594 A3 WO2006003594 A3 WO 2006003594A3 IB 2005052113 W IB2005052113 W IB 2005052113W WO 2006003594 A3 WO2006003594 A3 WO 2006003594A3
Authority
WO
WIPO (PCT)
Prior art keywords
printing
regions
stamp
compound
printing compound
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/IB2005/052113
Other languages
French (fr)
Other versions
WO2006003594A2 (en
Inventor
Michel M J Decre
Martin Blees
Eerd Partick P J Van
Richard J M Schroeders
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Original Assignee
Koninklijke Philips Electronics NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Koninklijke Philips Electronics NV filed Critical Koninklijke Philips Electronics NV
Publication of WO2006003594A2 publication Critical patent/WO2006003594A2/en
Publication of WO2006003594A3 publication Critical patent/WO2006003594A3/en
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/0002—Lithographic processes using patterning methods other than those involving the exposure to radiation, e.g. by stamping
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H10K71/12—Deposition of organic active material using liquid deposition, e.g. spin coating
    • H10K71/13—Deposition of organic active material using liquid deposition, e.g. spin coating using printing techniques, e.g. ink-jet printing or screen printing
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/10—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern
    • H05K3/12—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using thick film techniques, e.g. printing techniques to apply the conductive material or similar techniques for applying conductive paste or ink patterns

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Printing Plates And Materials Therefor (AREA)
  • Printing Methods (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)

Abstract

The present invention provides a soft lithographic stamp (30) and a method for the manufacturing of such a stamp (30). A stamp (30) according to the present invention comprises blocking regions (37) and printing regions (38). The blocking regions (37) are formed of a material which is different from the material the printing regions (38) are formed of and which exhibits a reduced permeability, diffusivity or absorbing or adsorbing capability to the printing compound, such that it prevents or significantly reduces chemical or physical transport or transfer of the printing compound from the blocking regions to a substrate that has to be patterned or printed. In that way, when impregnating the stamp (30) with a printing compound, the printing compound only diffuses into the printing regions (38) and hence, the printing compound is only transferred from the printing regions (38) to the substrate to be patterned and substantially no diffusion of printing compound via air voids (33) between protruding elements (32) will occur.
PCT/IB2005/052113 2004-06-30 2005-06-27 Soft lithographic stamp with a chemically patterned surface Ceased WO2006003594A2 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
EP04103075.0 2004-06-30
EP04103075 2004-06-30

Publications (2)

Publication Number Publication Date
WO2006003594A2 WO2006003594A2 (en) 2006-01-12
WO2006003594A3 true WO2006003594A3 (en) 2006-06-22

Family

ID=35783222

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/IB2005/052113 Ceased WO2006003594A2 (en) 2004-06-30 2005-06-27 Soft lithographic stamp with a chemically patterned surface

Country Status (3)

Country Link
CN (1) CN101198902A (en)
TW (1) TW200616514A (en)
WO (1) WO2006003594A2 (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8669645B2 (en) 2008-10-28 2014-03-11 Micron Technology, Inc. Semiconductor structures including polymer material permeated with metal oxide
US8900963B2 (en) 2011-11-02 2014-12-02 Micron Technology, Inc. Methods of forming semiconductor device structures, and related structures
US8956713B2 (en) 2007-04-18 2015-02-17 Micron Technology, Inc. Methods of forming a stamp and a stamp
US9142420B2 (en) 2007-04-20 2015-09-22 Micron Technology, Inc. Extensions of self-assembled structures to increased dimensions via a “bootstrap” self-templating method

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8083953B2 (en) 2007-03-06 2011-12-27 Micron Technology, Inc. Registered structure formation via the application of directed thermal energy to diblock copolymer films
US8557128B2 (en) 2007-03-22 2013-10-15 Micron Technology, Inc. Sub-10 nm line features via rapid graphoepitaxial self-assembly of amphiphilic monolayers
US8294139B2 (en) 2007-06-21 2012-10-23 Micron Technology, Inc. Multilayer antireflection coatings, structures and devices including the same and methods of making the same
DE102007024653A1 (en) 2007-05-26 2008-12-04 Forschungszentrum Karlsruhe Gmbh Stamp for microcontact printing and process for its preparation
US8404124B2 (en) 2007-06-12 2013-03-26 Micron Technology, Inc. Alternating self-assembling morphologies of diblock copolymers controlled by variations in surfaces
US8080615B2 (en) 2007-06-19 2011-12-20 Micron Technology, Inc. Crosslinkable graft polymer non-preferentially wetted by polystyrene and polyethylene oxide
US8999492B2 (en) 2008-02-05 2015-04-07 Micron Technology, Inc. Method to produce nanometer-sized features with directed assembly of block copolymers
US8101261B2 (en) 2008-02-13 2012-01-24 Micron Technology, Inc. One-dimensional arrays of block copolymer cylinders and applications thereof
US8425982B2 (en) 2008-03-21 2013-04-23 Micron Technology, Inc. Methods of improving long range order in self-assembly of block copolymer films with ionic liquids
US8426313B2 (en) 2008-03-21 2013-04-23 Micron Technology, Inc. Thermal anneal of block copolymer films with top interface constrained to wet both blocks with equal preference
US8114301B2 (en) 2008-05-02 2012-02-14 Micron Technology, Inc. Graphoepitaxial self-assembly of arrays of downward facing half-cylinders
US9087699B2 (en) 2012-10-05 2015-07-21 Micron Technology, Inc. Methods of forming an array of openings in a substrate, and related methods of forming a semiconductor device structure
US9229328B2 (en) 2013-05-02 2016-01-05 Micron Technology, Inc. Methods of forming semiconductor device structures, and related semiconductor device structures
US9177795B2 (en) 2013-09-27 2015-11-03 Micron Technology, Inc. Methods of forming nanostructures including metal oxides

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
MICHEL B ET AL: "PRINTING MEETS LITHOGRAPHY: SOFT APPROACHES TO HIGH-RESOLUTION PATTERNING", IBM JOURNAL OF RESEARCH AND DEVELOPMENT, INTERNATIONAL BUSINESS MACHINES CORPORATION, NEW YORK, NY, US, vol. 45, no. 5, September 2001 (2001-09-01), pages 697 - 719, XP001188193, ISSN: 0018-8646 *
SUH K Y ET AL: "FABRICATION OF ELASTOMERIC STAMPS WITH POLYMER-REINFORCED SIDEWALLS VIA CHEMICALLY SELECTIVE VAPOR DEPOSITION POLYMERIZATION OF POLY(P-XYLVYLENE)", APPLIED PHYSICS LETTERS, AIP, AMERICAN INSTITUTE OF PHYSICS, MELVILLE, NY, US, vol. 83, no. 20, 17 November 2003 (2003-11-17), pages 4250 - 4252, XP001191731, ISSN: 0003-6951 *

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8956713B2 (en) 2007-04-18 2015-02-17 Micron Technology, Inc. Methods of forming a stamp and a stamp
US9142420B2 (en) 2007-04-20 2015-09-22 Micron Technology, Inc. Extensions of self-assembled structures to increased dimensions via a “bootstrap” self-templating method
US8669645B2 (en) 2008-10-28 2014-03-11 Micron Technology, Inc. Semiconductor structures including polymer material permeated with metal oxide
US8900963B2 (en) 2011-11-02 2014-12-02 Micron Technology, Inc. Methods of forming semiconductor device structures, and related structures

Also Published As

Publication number Publication date
WO2006003594A2 (en) 2006-01-12
TW200616514A (en) 2006-05-16
CN101198902A (en) 2008-06-11

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