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WO2006003322A3 - Implanteur ionique fonctionnant en mode plasma pulse - Google Patents

Implanteur ionique fonctionnant en mode plasma pulse Download PDF

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Publication number
WO2006003322A3
WO2006003322A3 PCT/FR2005/001468 FR2005001468W WO2006003322A3 WO 2006003322 A3 WO2006003322 A3 WO 2006003322A3 FR 2005001468 W FR2005001468 W FR 2005001468W WO 2006003322 A3 WO2006003322 A3 WO 2006003322A3
Authority
WO
WIPO (PCT)
Prior art keywords
pulsed plasma
ion implanter
plasma mode
implanter
implanter operating
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/FR2005/001468
Other languages
English (en)
Other versions
WO2006003322A2 (fr
Inventor
Frank Torregrosa
Gilles Mathieu
Laurent Roux
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ion Beam Services SA
Original Assignee
Ion Beam Services SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ion Beam Services SA filed Critical Ion Beam Services SA
Priority to EP05777129A priority Critical patent/EP1774055A2/fr
Priority to US11/629,690 priority patent/US20080315127A1/en
Priority to BRPI0512247-3A priority patent/BRPI0512247A/pt
Publication of WO2006003322A2 publication Critical patent/WO2006003322A2/fr
Publication of WO2006003322A3 publication Critical patent/WO2006003322A3/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32412—Plasma immersion ion implantation
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/48—Ion implantation
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C8/00—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals
    • C23C8/06—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals using gases
    • C23C8/36—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals using gases using ionised gases, e.g. ionitriding
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32697—Electrostatic control
    • H01J37/32706—Polarising the substrate

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
  • Electron Sources, Ion Sources (AREA)
  • Plasma Technology (AREA)

Abstract

La présente invention concerne un implanteur ionique IMP qui comporte une source plasma pulsée SPL, un plateau porte-substrat PPS et une alimentation ALT de ce plateau. Cet implanteur comporte de plus une capacité C reliée directement à la masse E et montée en aval de l'alimentation plateau ALT. L'invention vise également un procédé de mise en oeuvre de l'implanteur.
PCT/FR2005/001468 2004-06-16 2005-06-14 Implanteur ionique fonctionnant en mode plasma pulse Ceased WO2006003322A2 (fr)

Priority Applications (3)

Application Number Priority Date Filing Date Title
EP05777129A EP1774055A2 (fr) 2004-06-16 2005-06-14 Implanteur ionique fonctionnant en mode plasma pulse
US11/629,690 US20080315127A1 (en) 2004-06-16 2005-06-14 Ion Implanter Operating in Pulsed Plasma Mode
BRPI0512247-3A BRPI0512247A (pt) 2004-06-16 2005-06-14 implantador iÈnico que funciona em modo plasma pulsado

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR0406496 2004-06-16
FR0406496A FR2871812B1 (fr) 2004-06-16 2004-06-16 Implanteur ionique fonctionnant en mode plasma pulse

Publications (2)

Publication Number Publication Date
WO2006003322A2 WO2006003322A2 (fr) 2006-01-12
WO2006003322A3 true WO2006003322A3 (fr) 2006-06-01

Family

ID=34947642

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/FR2005/001468 Ceased WO2006003322A2 (fr) 2004-06-16 2005-06-14 Implanteur ionique fonctionnant en mode plasma pulse

Country Status (6)

Country Link
US (1) US20080315127A1 (fr)
EP (1) EP1774055A2 (fr)
CN (1) CN1989269A (fr)
BR (1) BRPI0512247A (fr)
FR (1) FR2871812B1 (fr)
WO (1) WO2006003322A2 (fr)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2818390B1 (fr) * 2000-12-15 2003-11-07 Ion Beam Services Guide d'onde comportant un canal sur un substrat optique
FR2818755B1 (fr) * 2000-12-26 2004-06-11 Ion Beam Services Dispositif optiquement actif comportant un canal sur un substrat optique
JP2007324185A (ja) * 2006-05-30 2007-12-13 Canon Inc プラズマ処理方法
FR2902575B1 (fr) * 2006-06-14 2008-09-05 Ion Beam Services Sa Appareil de caracterisation optique du dopage d'un substrat
US7655928B2 (en) * 2007-03-29 2010-02-02 Varian Semiconductor Equipment Associates, Inc. Ion acceleration column connection mechanism with integrated shielding electrode and related methods
US8124942B2 (en) * 2010-02-16 2012-02-28 Fei Company Plasma igniter for an inductively coupled plasma ion source
FR2961010A1 (fr) * 2010-06-03 2011-12-09 Ion Beam Services Dispositif de mesure de dose pour l'implantation ionique en mode immersion plasma
FR2976400B1 (fr) * 2011-06-09 2013-12-20 Ion Beam Services Machine d'implantation ionique en mode immersion plasma pour procede basse pression.
FR2981193B1 (fr) * 2011-10-06 2014-05-23 Ion Beam Services Procede de commande d'un implanteur ionique en mode immersion plasma.
FR2998707B1 (fr) * 2012-11-27 2016-01-01 Ion Beam Services Implanteur ionique pourvu d'une pluralite de corps de source plasma
US9783884B2 (en) * 2013-03-14 2017-10-10 Varian Semiconductor Equipment Associates, Inc. Method for implementing low dose implant in a plasma system
FR3045206B1 (fr) * 2015-12-10 2020-01-03 Ion Beam Services Procede de commande pour un implanteur fonctionnant en immersion plasma

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4874494A (en) * 1986-06-06 1989-10-17 Tadahiro Ohmi Semiconductor manufacturing apparatus
WO1995019884A1 (fr) * 1994-01-21 1995-07-27 The Regents Of The Universtiy Of California Traitement de surface d'articles ceramiques
US5558718A (en) * 1994-04-08 1996-09-24 The Regents, University Of California Pulsed source ion implantation apparatus and method
DE19538903A1 (de) * 1995-10-19 1997-04-24 Rossendorf Forschzent Verfahren zur Implantation von Ionen in leitende bzw. halbleitende Werkstücke mittels Plasmaimmersionsionenimplantation (P III) und Implantationskammer zur Durchführung des Verfahrens
US20030012890A1 (en) * 1997-09-17 2003-01-16 Thomas Weber Method for producing a plasma by microwave irradiation

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS52106274A (en) * 1976-03-03 1977-09-06 Hitachi Ltd Non-destructive screening method of glass diode and its equipment
KR930003857B1 (ko) * 1987-08-05 1993-05-14 마쯔시다덴기산교 가부시기가이샤 플라즈마 도우핑방법
US5212425A (en) * 1990-10-10 1993-05-18 Hughes Aircraft Company Ion implantation and surface processing method and apparatus
US5948483A (en) * 1997-03-25 1999-09-07 The Board Of Trustees Of The University Of Illinois Method and apparatus for producing thin film and nanoparticle deposits
US6433553B1 (en) * 1999-10-27 2002-08-13 Varian Semiconductor Equipment Associates, Inc. Method and apparatus for eliminating displacement current from current measurements in a plasma processing system
US6458430B1 (en) * 1999-12-22 2002-10-01 Axcelis Technologies, Inc. Pretreatment process for plasma immersion ion implantation
US20010046566A1 (en) * 2000-03-23 2001-11-29 Chu Paul K. Apparatus and method for direct current plasma immersion ion implantation
JP4205294B2 (ja) * 2000-08-01 2009-01-07 キヤノンアネルバ株式会社 基板処理装置及び方法
FR2818390B1 (fr) * 2000-12-15 2003-11-07 Ion Beam Services Guide d'onde comportant un canal sur un substrat optique
FR2818755B1 (fr) * 2000-12-26 2004-06-11 Ion Beam Services Dispositif optiquement actif comportant un canal sur un substrat optique
US20030116089A1 (en) * 2001-12-04 2003-06-26 Walther Steven R. Plasma implantation system and method with target movement
US6803275B1 (en) * 2002-12-03 2004-10-12 Fasl, Llc ONO fabrication process for reducing oxygen vacancy content in bottom oxide layer in flash memory devices

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4874494A (en) * 1986-06-06 1989-10-17 Tadahiro Ohmi Semiconductor manufacturing apparatus
WO1995019884A1 (fr) * 1994-01-21 1995-07-27 The Regents Of The Universtiy Of California Traitement de surface d'articles ceramiques
US5558718A (en) * 1994-04-08 1996-09-24 The Regents, University Of California Pulsed source ion implantation apparatus and method
DE19538903A1 (de) * 1995-10-19 1997-04-24 Rossendorf Forschzent Verfahren zur Implantation von Ionen in leitende bzw. halbleitende Werkstücke mittels Plasmaimmersionsionenimplantation (P III) und Implantationskammer zur Durchführung des Verfahrens
US20030012890A1 (en) * 1997-09-17 2003-01-16 Thomas Weber Method for producing a plasma by microwave irradiation

Also Published As

Publication number Publication date
US20080315127A1 (en) 2008-12-25
FR2871812A1 (fr) 2005-12-23
EP1774055A2 (fr) 2007-04-18
FR2871812B1 (fr) 2008-09-05
CN1989269A (zh) 2007-06-27
BRPI0512247A (pt) 2008-02-19
WO2006003322A2 (fr) 2006-01-12

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