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WO2006053036A2 - Trous traversants non circulaires pour former des bossages sur des plages de connexion et des structures associees - Google Patents

Trous traversants non circulaires pour former des bossages sur des plages de connexion et des structures associees Download PDF

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Publication number
WO2006053036A2
WO2006053036A2 PCT/US2005/040584 US2005040584W WO2006053036A2 WO 2006053036 A2 WO2006053036 A2 WO 2006053036A2 US 2005040584 W US2005040584 W US 2005040584W WO 2006053036 A2 WO2006053036 A2 WO 2006053036A2
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Prior art keywords
conductive
pad
integrated circuit
hole
circuit device
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WO2006053036A3 (fr
Inventor
William E. Batchelor
Glenn A. Rinne
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Unitive International Ltd
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Unitive International Ltd
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Publication of WO2006053036A3 publication Critical patent/WO2006053036A3/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/02—Bonding areas ; Manufacturing methods related thereto
    • H01L24/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L24/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H—ELECTRICITY
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    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3157—Partial encapsulation or coating
    • H01L23/3171—Partial encapsulation or coating the coating being directly applied to the semiconductor body, e.g. passivation layer
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    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554—External layer
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    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/8538—Bonding interfaces outside the semiconductor or solid-state body
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    • H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
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    • H01L2924/013—Alloys
    • H01L2924/014—Solder alloys
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    • H01L2924/11—Device type
    • H01L2924/14—Integrated circuits
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    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151—Die mounting substrate
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    • H01L2924/15786—Material with a principal constituent of the material being a non metallic, non metalloid inorganic material
    • H01L2924/15787—Ceramics, e.g. crystalline carbides, nitrides or oxides

Definitions

  • the present invention relates to the field of electronics, and more particularly to electronic structures including solder layers and related methods.
  • Solder layers may be used to provide electrical and mechanical coupling between two electronic substrates, such as in flip-chip bonding.
  • a solder layer may be provided on a conductive pad of an electronic substrate (such as an input/output pad of an integrated circuit substrate), and the solder layer can be used to bond the electronic substrate to a next level of packaging such as a printed circuit board, a ceramic substrate, and/or another integrated circuit device. Accordingly, the solder layer may provide an electrical interconnection between the electronic substrate and the next level of packaging.
  • a solder bump may be provided on a portion of a conductive pad exposed through a via in an insulating layer.
  • a relatively thin underbump metallurgy (UBM) layer may promote adhesion, provide a plating electrode, and/or provide a routing conductor.
  • An insulating layer on the electronic structure may include a via therein exposing a portion of the conductive pad on which the solder layer is provided.
  • a relatively high current density at the via edge may accelerate local electromigration of the solder layer at the via edge.
  • Solder for example, may be particularly susceptible to electromigration because of its relatively low melting temperature. Diffusion of metal in the solder layer away from the via edge may result in formation of a void in the solder layer adjacent the via edge. The void may block current flow thus forcing the current to travel farther past the via edge before turning toward the solder. Accordingly, a void may grow laterally along an interface between the solder and the conductive pad.
  • Solder layers may be relatively sensitive to electromigration as discussed, for example, by W. J. Choi et al. in "Electromigration Of Flip Chip Solder Bump On Cu/Ni(V)/Al Thin Film Under Bump Metallization” (Proceedings of the IEEE Electronic Components Technology Conference, 2002). The disclosure of the Choi et al. reference is hereby incorporated herein in its entirety by reference.
  • an integrated circuit device may include a substrate, a conductive pad on a surface of the substrate, and a conductive line on the surface of the substrate.
  • the conductive line may be connected to the conductive pad, and the conductive line may be narrow relative to the conductive pad.
  • An insulating layer may be provided on the substrate, on the conductive line, and on edge portions of the conductive pad, and the insulating layer may have a hole therein exposing a central portion of the conductive pad.
  • a first segment of a perimeter of the hole may substantially define an arc of a circle around the central portion of the conductive pad, and a second segment of the perimeter of the hole may substantially deviate from the circle around the central portion of the conductive pad. Moreover, the second segment of the perimeter of the hole may be adjacent a connection between the conductive line and the conductive pad.
  • a conductive bump may be provided on the central portion of the conductive pad and on portions of the insulating layer surrounding the hole so that the insulating layer is between the conductive bump and edge portions of the conductive pad.
  • the conductive bump may include a solder bump, and/or the conductive bump may have a substantially circular footprint on the insulating layer.
  • an underbump metallurgy layer may be provided on the central portion of the conductive pad and on portions of the insulating layer surrounding the hole so that the under bump metallurgy layer is between the conductive bump and portions of the insulating layer surrounding the hole, and the underbump metallurgy layer and the conductive bump may comprise different materials.
  • An input/output pad may be provided on the substrate, and the conductive line may provide electrical connection between the conductive pad and the input/output pad.
  • a second conductive line may be connected to the input/output pad, and a second conductive pad may be connected to the second conductive line wherein the insulating layer has a second hole therein exposing a central portion of the second conductive pad.
  • a first conductive bump may be provided on the central portion of the first conductive pad and on portions of the insulating layer surrounding the first hole, and a second conductive bump may be provided on the central portion of the second conductive pad and on portions of the insulating layer surrounding the second hole.
  • the second segment of the perimeter of the hole may substantially define a line, and a length of the second segment may be at least as great as a width of the conductive line. According to other embodiments of the present invention, the second segment of the perimeter- of the hole may curve toward the center of the conductive pad.
  • an integrated circuit device may include a substrate, a conductive pad on a surface of the substrate, and a conductive line on the surface of the substrate.
  • the conductive line may be connected to the conductive pad, and the conductive line may be narrow relative to the conductive pad.
  • An insulating layer may be provided on the substrate, on the conductive line, and on edge portions of the conductive pad, the insulating layer may have a hole therein exposing a central portion of the conductive pad, and at least a segment of a perimeter of the hole may be non-circular.
  • a conductive bump may be provided on the central portion of the conductive pad and on portions of the insulating layer surrounding the hole so that the insulating layer is between the conductive bump and edge portions of the conductive pad and so that the conductive bump has a substantially circular footprint on the insulating layer.
  • the conductive bump may include a solder bump.
  • an underburnp metallurgy layer may be provided on the central portion of the conductive pad and on portions of the insulating layer surrounding the hole so that the under bump metallurgy layer is between the conductive bump and portions of the insulating layer surrounding the hole.
  • the underbump metallurgy layer and the conductive bump may include different materials.
  • a first segment of a perimeter of the hole may substantially define an arc of a circle around the central portion of the conductive pad, and a second segment of the perimeter of the hole may substantially deviate from the circle around the central portion of the conductive pad.
  • the second segment of the perimeter of the hole may be adjacent a connection between the conductive line and the conductive pad.
  • the second segment of the perimeter of the hole may substantially define a line, and a length of the second segment may be at least as great as a width of the conductive line.
  • the second segment of the perimeter of the hole may curve toward the center of the conductive pad.
  • an input/output pad may be provided on the substrate wherein the conductive line provides electrical connection between the conductive pad and the input/output pad.
  • the integrated circuit device may include a second conductive line connected to the input/output pad, and a second conductive pad connected to the second conductive line wherein the insulating layer has a second hole therein exposing a central portion of the second conductive pad.
  • a first conductive bump may be provided on the central portion of the first conductive pad and on portions of the insulating layer surrounding the first hole, and a second conductive bump may be provided on the central portion of the second conductive pad and on portions of the insulating layer surrounding the second hole.
  • an integrated circuit device may include a substrate, an input/output pad on the substrate, and first and second conductive lines on the substrate with both of the first and second lines being connected to the input/output pad.
  • First and second conductive pads may be provided on the substrate with the first conductive pad being connected to the first conductive line and with the second conductive pad being connected to the second conductive line.
  • An insulating layer may be provided on the first and second conductive lines and on edge portions of the first and second conductive pads, and the insulating layer may have first and second holes therein exposing central portions of the respective first and second conductive pads.
  • a first conductive bump may be provided on the central portion of the first conductive bump and on portions of the insulating layer surrounding the first hole
  • a second conductive bump may be provided on the central portion of the second conductive pad and on portions of the insulating layer surrounding the second hole.
  • the first and second conductive bumps may include respective first and second solder bumps, and each of the first and second conductive bumps may have a substantially circular footprint on the insulating layer.
  • a first underbump metallurgy layer may be provided on the central portion of the first conductive pad and on portions of the insulating layer surrounding the first hole so that the first under bump metallurgy layer is between the first conductive bump and portions of the insulating layer surrounding the first hole, and the first underbump metallurgy layer and the first conductive bump may include different materials.
  • a second underbump metallurgy layer may be provided on the central portion of the second conductive pad and on portions of the insulating layer surrounding the second hole so that the second under bump metallurgy layer is between the second conductive bump and portions of the insulating layer surrounding the second hole, and the second underbump metallurgy layer and the second conductive bump may include different materials.
  • the first conductive line may provide a first electrical resistance between the input/output pad and the first conductive pad
  • the second conductive line may provide a second electrical resistance between the input/output pad and the second conductive pad
  • the first and second electrical resistances may be different.
  • the first conductive line may have a first length between the input/output pad and the first conductive pad, the second conductive line may have a second length between the input/output pad and the second conductive pad, and the first and second lengths may be different.
  • the first conductive line may have a first width
  • the second conductive line may have a second width
  • the first and second widths may be different.
  • the first conductive line may have a first thickness
  • the second conductive line may have a second thickness
  • the first and second thicknesses may be different.
  • the first conductive line may include a first material
  • the second conductive line may include a second material, and the first and second materials may be different.
  • the input/output pad may be a ground pad providing a ground connection for the integrated circuit device, or the input/output pad may be a power pad providing a power connection for the integrated circuit device.
  • the first conductive line may be narrow relative to the first conductive pad, a first segment of a perimeter of the first hole may substantially define an arc of a circle around the central portion of the first conductive pad, and a second segment of the perimeter of the first hole may substantially deviate from the circle around the central portion of the conductive pad.
  • the second segment of the perimeter of the first hole may be adjacent a connection between the conductive line and the conductive pad.
  • at least a segment of a perimeter of the first hole may be non-circular.
  • Figure IA is a top view illustrating a conductive line and pad according to embodiments of the present invention.
  • Figures IB-C are cross sectional views illustrating conductive lines and pads according to embodiments of the present invention.
  • Figure 2A is a top view illustrating current concentrations on a conductive line and pad according to embodiments of the present invention.
  • Figure 2B is a mapping of greyscale shades from Figure 2A with respect to current densities.
  • Figures 3A-B are cross sectional views illustrating power bumps according to embodiments of the present invention.
  • Figures 4A-B are cross sectional views illustrating ground bumps according to embodiments of the present invention.
  • Figures 5 A-B are respective top and cross sectional views illustrating multiple bumps connected to an input/output pad according to some embodiments of the present invention.
  • Figures 6A-B are respective top and cross sectional views illustrating multiple bumps connected to an input/output pad according to some other embodiments of the present invention.
  • Figures 7A-B are respective top and cross sectional views illustrating multiple bumps connected to an input/output pad according to some additional embodiments of the present invention.
  • Figures 8A-B are respective top and cross sectional views illustrating multiple bumps connected to an input/output pad according to some more embodiments of the present invention.
  • Figures 9A-B are respective top and cross sectional views illustrating multiple bumps connected to an input/output pad according to still more embodiments of the present invention.
  • Figures 10A-B are respective top and cross sectional views illustrating multiple bumps connected to an input/output pad according to yet more embodiments of the present invention. Detailed Description
  • Embodiments of the invention are described herein with reference to cross-section illustrations that are schematic illustrations of idealized embodiments (and intermediate structures) of the invention. As such, variations from the shapes of the illustrations as a result, for example, of manufacturing techniques and/or tolerances, are to be expected. Thus, embodiments of the invention should not be construed as limited to the particular shapes of regions illustrated herein but are to include deviations in shapes that result, for example, from manufacturing. For example, an implanted region illustrated as a rectangle will, typically, have rounded or curved features and/or a gradient of implant concentration at its edges rather than a binary change from implanted to non-implanted region.
  • a buried region formed by implantation may result in some implantation in the region between the buried region and the surface through which the implantation takes place.
  • a patterned feature (such as a perimeter of a hole) illustrated having sharp transitions may typically have a rounded or curved transition.
  • relative terms such as beneath, upper, lower, top, and/or bottom may be used herein to describe one element's relationship to another element as illustrated in the figures. It will be understood that relative terms are intended to encompass different orientations of the device in addition to the orientation depicted in the figures. For example, if the device in one of the figures is turned over, elements described as below other elements would then be oriented above the other elements. The exemplary term below, can therefore, encompasses both an orientation of above and below.
  • first and second are used herein to describe various regions, layers and/or sections, these regions, layers and/or sections should not be limited by these terms. These terms are only used to distinguish one region, layer or section from another region, layer or section. Thus, a first region, layer or section discussed below could be termed a second region, layer or section, and similarly, a second region, layer or section could be termed a first region, layer or section without departing from the teachings of the present invention. Like numbers refer to like elements throughout.
  • effects of electromigration can be reduced by using more power or ground bumps depending on an expected operating temperature of a solder bump interconnection (such as a SnPb solder bump interconnection) because segregation of lead and tin may be a risk at the cathode below 100 degrees C and at the anode above 100 degrees C due to the relative diffusivities of the two components.
  • a solder bump interconnection such as a SnPb solder bump interconnection
  • diffusivities of lead and tin in a lead-tin solder may vary over temperature, with lead diffusing faster than tin at temperatures greater than approximately 100 degrees C and with tin diffusing faster than lead at temperatures less than approximately 100 degrees C.
  • a faster diffusing component of the solder metallurgy may tend to segregate toward a positive terminal (i.e., an anode) of the solder bump, and/or a slower diffusing component of the solder metallurgy may tend to segregate toward a negative terminal (i.e., a cathode) of the solder bump.
  • An increased tin concentration may damage an under bump metallurgy layer between a lead-tin solder bump and a contact pad of an integrated circuit device.
  • a power bump may be connected between a power supply conductor (anode) of a printed circuit board and a Vcc pad (cathode) of an integrated circuit device.
  • tin may segregate toward the Vcc pad of the integrated circuit device, and lead may segregate toward the power supply conductor of the printed circuit board.
  • lead may segregate toward the Vcc pad of the integrated circuit device, and tin may segregate toward the power supply conductor of the printed circuit board.
  • a plurality of power bumps may be provided for an integrated circuit device when operating conditions for the integrated circuit device are generally expected to exceed approximately 100 degrees C.
  • a plurality of redistribution lines may connect a respective plurality of solder bumps to a single power pad of the integrated circuit device.
  • a number of power bumps provided for the integrated circuit device may exceed a number of ground bumps provided for the integrated circuit device.
  • binary solid solution solders such as lead-tin solders
  • other solid solution solders including higher order solid solution solders
  • binary and higher order intermetallic compound solders such as tin-silver and tin-silver-copper solders may also be used according to embodiments of the present invention.
  • a plurality of redistribution lines 111 IA-C may connect a respective plurality of solder bumps 1115 A-C to a single Vcc pad 1117 of the integrated circuit device, and each redistribution line 1111 A-C may include a respective pad portion 1111A', 1111B', and HIlC.
  • the integrated circuit device may include a semiconductor substrate 1119, a first insulating layer 1121, and a second insulating layer 1123.
  • the redistribution lines 1111A-C may be provided between the first and second insulating layers 1121 and 1123, and via holes in the second insulating layer 1123 may expose pad portions HHA', IHlB', and HIlC of the redistribution lines HHA, HHB, and HHC.
  • a respective under bump metallurgy layer 1125 may be provided between each of the solder bumps 1115A-C and the pad portions HHA', HUB', and HHC of the redistribution lines.
  • the under bump metallurgy layer 1125B is shown in the cross sectional view of Figure 5B.
  • a plurality of solder bumps may be connected to a respective plurality of Vcc pads.
  • current can be distributed, and segregation can be reduced.
  • failure of a single power bump may not be catastrophic.
  • one or more of the via holes through the insulating layer 1123 exposing conductive pads HHA', IHlB', and/or IHlC may have a non-circular perimeter as discussed below with respect to Figures IA-C. More particularly, one or more of the via holes through the insulating layer 1123 exposing one or more of conductive pads 1111A', 1111B', and/or llllC may have a "D" shaped and/or a crescent shaped perimeter as discussed below with respect to Figures IA-C.
  • a ground bump may be connected between a ground conductor (cathode) of a printed circuit board and a ground pad (anode) of an integrated circuit device.
  • a ground conductor cathode
  • a ground pad anode
  • lead may segregate toward the ground pad of the integrated circuit device, and tin may segregate toward the ground conductor of the printed circuit board.
  • tin may segregate toward the ground pad of the integrated circuit device, and lead may segregate toward the ground conductor of the printed circuit board.
  • a plurality of ground bumps may be provided for an integrated circuit device when operating conditions for the integrated circuit device are generally expected not to exceed approximately 100 degrees C.
  • a plurality of redistribution lines may connect a respective plurality of solder bumps to a single ground pad of the integrated circuit device.
  • a number of ground bumps provided for the integrated circuit device may exceed a number of power bumps provided for the integrated circuit device.
  • binary solid solution solders such as lead-tin solders
  • other solid solution solders including higher order solid solution solders
  • binary and higher order intermetallic compound solders such as tin-silver and tin-silver-copper solders may also be used according to embodiments of the present invention.
  • a plurality of redistribution lines 211 IA-C may connect a respective plurality of solder bumps 2115A-C to a single ground pad 2117 of the integrated circuit device, and each redistribution line 2111A-C may include a respective pad portion 2111 A', 2111B', and 2111C.
  • the integrated circuit device may include a semiconductor substrate 2119, a first insulating layer 2121, and a second insulating layer 2123.
  • the redistribution lines 2111A-C may be provided between the first and second insulating layers 2121 and 2123, and via holes in the second insulating layer 2123 may expose pad portions 2111A', 2111B', and 2111C of the redistribution lines 2111A, 2111B, and 2111C.
  • a respective under bump metallurgy layer 2125 may be provided between each of the solder bumps 2115A-C and the pad portions 2111A', 2111B', and 2111C of the redistribution lines.
  • the under bump metallurgy layer 2125B is shown in the cross sectional view of Figure 6B.
  • one or more of the via holes through the insulating layer 2123 exposing conductive pads 2111A', 2111B', and/or 2111C may have a non-circular perimeter as discussed below with respect to Figures IA-C. More particularly, one or more of the via holes through the insulating layer 2123 exposing one or more of conductive pads 2111A', 2111B 1 , and/or 2111C may have a "D" shaped and/or a crescent shaped perimeter as discussed below with respect to Figures IA-C.
  • a plurality of solder bumps may be connected to a respective plurality of ground pads.
  • a plurality of ground bumps current can be distributed, and segregation can be reduced. Moreover, failure of a single ground bump may not be catastrophic.
  • Benefits may also be provided according to embodiments of the present invention by connecting a plurality of solder bumps to input/output pads other than ground and/or Vcc pads.
  • a plurality of solder bumps can be distributed and segregation can be reduced, and failure of a single bump may not be catastrophic.
  • Provision of multiple bumps may be particularly, beneficial with input/output pads carrying currents sufficient to result in accumulation of vacancies at interfaces between a solder bump and its under bump metallurgy.
  • provision of multiple bumps may be beneficial where relatively large DC currents are provided through a pad (such as a ground and/or Vcc pad).
  • Provision of multiple bumps may also be beneficial where intermittent unidirectional currents are provided through a pad (such as a pad providing a Pulse Width Modulation signal) and/or where bi ⁇ directional currents which are predominate in one direction are provided through a pad (such as a pad providing a Pulse-Reverse Plating signal).
  • provision of multiple bumps may be beneficial wherein sufficiently high AC currents are provided through a pad such that vacancies may accumulate at a solder bump interface during half cycles of the signal.
  • a device lifetime may be increased. More particularly, different resistances may be provided between the pad and each of the solder bumps connected to the pad so that, initially, current predominantly flows between the pad and a first solder bump connected through a path of least electrical resistance. Accordingly, vacancies (due to electromigration) may initially accumulate between the first solder bump and the respective under bump metallurgy layer, and vacancies may not substantially accumulate at a second solder bump connected through a path of higher resistance while the first solder bump is operational.
  • the accumulation of vacancies at the first solder bump may eventually result in a void at the first solder bump and then failure of the first solder bump. Because significant current may not flow through the second solder bump until the first solder bump fails (due to the higher electrical resistance between the second solder bump and the pad), vacancies may not begin to significantly accumulate at the second solder bump until after failure of the first solder bump. An initiation of incubation of vacancies and/or voids in the second solder bump may thus be substantially delayed until after failure of the first solder bump. Stated in other words, initiation of a failure mechanism in the second solder bump may be substantially delayed until after failure of the first solder bump.
  • effects of electromigration can be reduced by providing a 'D' shaped via with a flat of the D facing the conductive line or trace (i.e. facing the incoming/outgoing current flow).
  • This structure may reduce current crowding at a short path to a nearest point of a conventional circular via.
  • the via can be concave and/or crescent shaped in the direction of the conductive line or trace (i.e. in the direction of the incoming/outgoing current flow.
  • a conductive line (or trace) 905 (such as a redistribution routing line) may be coupled to a circular conductive pad 903.
  • the conductive line 905, for example, may provide electrical interconnection between the conductive pad 903 and an input/output pad of an integrated circuit device, and a solder bump may be electrically coupled to the conductive pad 903.
  • the conductive line 905 and pad 903 may be covered by a subsequently formed insulating layer, and a via hole 918 may be formed in the insulating layer so that edge (or peripheral) portions 903a of the pad 903 remain covered by the insulating layer and central (or interior) portions 903b are exposed by the via hole 918.
  • central (or interior) portions 903b of the conductive pad 903 may be tree of the insulating layer.
  • a perimeter of the via hole 918 may have a "D" shape as illustrated by the segments 917 and 917'. Accordingly, a linear segment 917' of the perimeter of the "D" shaped via hole 918 may be adjacent and/or closest to the conductive line (or trace) 905. In an alternative, the perimeter of the via hole 918 may have a crescent shape as illustrated by the segments 917 and 917". Accordingly, a concave and/or crescent shaped segment 917" of the via hole 918 may be adjacent and/or closest to the conductive line 905.
  • a first segment 917 of the perimeter of the via hole 918 may substantially define an arc of a circle around central portions of the conductive pad 903.
  • a second segment 917' or 917" of the perimeter of the via hole 918 may substantially deviate from the circle around the central portion of the conductive pad 903.
  • the second segment 917' or 917" of the perimeter of the via hole 918 may be adjacent a connection between the conductive line 905 and the conductive pad 903.
  • the second segment of the perimeter of the via hole 918 may define a line as shown by the segment 917', and a length of the second segment 917' may be at least as great as a width of the conductive line.
  • the second segment 917" of the perimeter of the via hole 918 may curve toward a center of the conductive pad 903.
  • at least a segment of the perimeter of the via hole may be non-circular.
  • FIG. 1B The cross sectional view of Figure IB illustrates the conductive line 905 and pad 903 in an electronic device including a substrate 901 and an insulating layer 907.
  • the via hole 917 may expose a portion of the conductive pad 903B having a "D" shape and/or a crescent shape. Stated in other words, a perimeter of the via hole 918 may have a "D" shape and/or a crescent shape.
  • FIG. 1C The cross sectional view of Figure 1C illustrates the structure of Figure IB with the under bump metallurgy (UBM) layer 911 and solder bump 920 formed thereon.
  • UBM under bump metallurgy
  • solder bump 920 may extend over portions of the insulating layer 907 outside the. via hole. Accordingly, portions of the UBM layer 911 and the solder bump 920 extending on the insulating layer 907 may define a circle even though the via hole is not circular. Accordingly, a solder bump 920 having a circular footprint may be provided even though a perimeter of the via hole through the insulating layer 907 has a "D" shape and/or a crescent shape.
  • the conductive line 905 and pad 903 may include a patterned layer(s) of a conductive material(s) such as copper, aluminum, nickel, titanium, and/or combinations and/or alloys thereof.
  • the UBM layer 911 may include one or more of an adhesion layer (such as a layer(s) of titanium, tungsten, chrome, and/or combinations and/or alloys thereof); a plating conduction layer (such as a layer of copper having a thickness in the range of approximately 0.1 to approximately 0.5 micrometers); a conductive shunt layer (such as a. layer of copper having a thickness in the range of approximately 1.0 to approximately 5.0 micrometers); and/or a barrier layer (such as a layer(s) of nickel, platinum, palladium, and/or combinations and/or alloys thereof).
  • the solder bump 920 may include lead-tin solder, but other solders may be used.
  • Figures 2A-B illustrate current concentrations from a conductive line 905 (for example, a redistribution line) to a conductive pad 903 exposed through a crescent shaped via hole 918 with a concave segment 917" of the crescent toward the current carrying conductive line 905.
  • a concentration of current entering/leaving the solder bump through the conductive .pad 903 may be reduced.
  • a greatest concentration of current may be provided through the conductive line 905, and least concentrations of current may be provided at portions of the conductive pad 903 opposite the conductive line 905 and at a central portion 933 of the via hole.
  • Greyscale shading between the conductive line 905 and the concave segment 917" of the crescent illustrates a spreading (reduced concentration) of current entering/leaving the solder bump relative to a pad with a via hole having a circular perimeter.
  • FIG. 1 Particular embodiments of the present invention including "D" shaped and crescent shaped vias are discussed above with respect to Figures IA-C and 2A-B by way of example. Vias having other shapes and/or deviating from the particular shapes of Figures IA-C and 2A-B may be provided according to other embodiments of the present invention. For example, sharp transitions of the perimeter of the via may be rounded either intentionally and/or as a result of processing tolerances.
  • increased solder bump life may be provided by reserving backup bumps that pass little current until a respective primary bump fails. Because nucleation of voids proceeds at a rate slower than void growth, relatively little nucleation may occur in a backup bump until the primary bump fails, and void nucleation in the backup bump may not substantially begin until after failure of the first bump when the backup bump begins carrying significant current. More particularly, separate redistribution lines may be provided from an integrated circuit contact pad to primary and backup solder bumps, and the redistribution line to the backup solder bump may provide a higher resistance than the redistribution line to the primary solder bump so that during normal operation, the backup solder bump carries significantly less current than the primary solder bump.
  • the redistribution line to the backup solder bump may be narrower, thinner, and/or longer than the redistribution line to the primary solder bump. Accordingly, the redistribution line to the backup solder bump may provide a resistance sufficiently greater than that of the redistribution line to the primary solder bump so that the primary solder bump carries significantly more current during normal operations.
  • the resistance of the redistribution line to the backup solder bump is sufficiently low so that performance of the integrated circuit device is not significantly diminished on failure of the primary solder bump. A failure mechanism resulting from void nucleation and growth in the backup solder bump may thus not substantially begin until after failure of the primary solder bump.
  • the conductive line 905 may be coupled to an input/output pad on the substrate 901.
  • the conductive line 905 may be coupled to an input/output pad as shown, for example, in Figures 5 A-B, 6A-B 3 7A-B, 8A-B, 9A-B, and/or 10A-B.
  • the conductive line 905 may be one of a plurality of conductive lines coupled to a same input/output pad so that there is a redundancy of electrical connection between a single input/output pad and a next level of packaging.
  • a relatively short conductive line (or trace) 7001 may be provided between input/output pad 7003 and primary solder bump 7005, and a relatively long conductive line (or trace) 7007 may be provided between input/output pad 7003 and backup solder bump 7009.
  • the greater length of conductive line 7007 relative to conductive line 7001 may provide a lesser resistance between input/output pad 7003 and primary solder bump 7005 than between input/output pad 7003 and secondary solder bump 7009. Accordingly, current into and out of the input/output pad 7003 may flow primarily through conductive line 7001 and primary bump 7005 providing a path of least resistance. In the event of failure of a joint with the primary bump 7005, current may then pass through conductive line 7007 and secondary bump 7009.
  • the conductive lines 7001 and 7007 may be provided between first and second insulating layers 7111 and- 7115, and input/output pad 7003 may be provided between semiconductor substrate 7117 and first insulating layer 7111. Moreover, via holes in the second insulating layer 7115 may expose conductive pads 7001' and 7007' respectively connected to conductive lines 7001 and 7007, and under bump metallurgy layers 7121 and 7123 may be provided between solder bumps 7005 and 7009 and the respective conductive pads 7001' and 7007' of conductive lines 7001 and 7007.
  • one or both of the via holes through the insulating layer 7115 exposing conductive pads 7001' and/or 7007' may have a non- circular perimeter as discussed above with respect to Figures IA-C. More particularly, one or both of the via holes through the insulating layer 7115 exposing conductive pads 7001' and/or 7007' may have a "D" shaped and/or a crescent shaped perimeter as discussed above with respect to Figures IA-C.
  • a relatively wide conductive line (or trace) 8001 may be provided between input/output pad 8003 and primary solder bump 8005, and a relatively narrow conductive line (or trace) 8007 may be provided between input/output pad 8003 and backup solder bump 8009.
  • the greater width of conductive line 8007 relative to conductive line 8001 may provide a lesser resistance between input/output pad 8003 and primary solder bump 8005 than between input/output pad 8003 and secondary solder bump 8009. Accordingly, current into and out of the input/output pad 8003 may flow primarily through conductive line 8001 and primary bump 8005 providing a path of least resistance. In the event of failure of a joint with the primary bump 8005, current may then pass through conductive line 8007 and secondary bump 8009.
  • the conductive lines 8001 and 8007 may be provided between first and second insulating layers 8111 and 8115, and input/output pad 8003 may be provided between semiconductor substrate 8117 and first insulating layer 8111. Moreover, via holes in the second insulating layer 8115 may expose conductive pads 8001' and 8007' respectively connected to conductive lines 8001 and 8007, and under bump metallurgy layers 8121 and 8123 may be provided between solder bumps 8005 and 8009 and the respective conductive pads 8001' and 8007' of conductive lines 8001 and 8007.
  • one or both of the via holes through the insulating layer 8115 exposing conductive pads 8001' and/or 8007' may have a non- circular perimeter as discussed above with respect to Figures IA-C. More particularly, one or both of the via holes through the insulating layer 8115 exposing conductive pads 8001' and/or 8007' may have a "D" shaped and/or a crescent shaped perimeter as discussed above with respect to Figures IA-C.
  • a relatively thick conductive line (or trace) 9001 may be provided between input/output pad 9003 and primary solder bump 9005, and a relatively thin conductive line (or trace) 9007 may be provided between input/output pad 9003 and backup solder bump 9009.
  • the greater thickness of conductive line 9007 relative to conductive line 9001 may provide a lesser resistance between input/output pad 9003 and primary solder bump 9005 than between input/output pad 9003 and secondary solder bump 9009. Accordingly, current into and out of the input/output pad 9003 may flow primarily through conductive line 9001 and primary bump 9005 providing a path of least resistance.
  • the primary and backup conductive lines may include a common conductive layer(s) 9031 which may be formed using a same depositions), and the primary conductive line may include an additional conductive layer(s) 9033 not included in the backup conductive line.
  • layers of the primary and backup conductive lines may be separately formed to have different thicknesses.
  • the primary and backup conductive lines may include different conductive materials providing different resistances.
  • the conductive lines 9001 and 9007 may be provided between first and second insulating layers 9111 and 9115, and input/output pad 9003 may be provided between semiconductor substrate 9117 and first insulating layer 9111.
  • via holes in the second insulating layer 9115 may expose conductive pads 9001' and 9007' respectively connected to conductive lines 9001 and 9007, and under bump metallurgy layers 9121 and 9123 may be provided between solder bumps 9005 and 9009 and the respective conductive pads 9001' and 9007' of conductive lines 9001 and 9007.
  • elements of embodiments illustrated in Figures 7A-B, 8A-B, and 9A-B may be combined.
  • one or both of the via holes through the insulating layer 9115 exposing conductive pads 9001' and/or 9007' may have a non- circular perimeter as discussed above with respect to Figures IA-C. More particularly, one or both of the via holes through the insulating layer 9115 exposing conductive pads 9001' and/or 9007' may have a "D" shaped and/or a crescent shaped perimeter as discussed above with respect to Figures IA-C.
  • a plurality of solder bumps 10005a-c may be provided along a same conductive line (or trace) including segments lOOOla-c connected to input/output pad 10003.
  • the lesser distance between the solder bump 10005a and the input/output pad 10003 relative to the solder bumps 10005b-c may provide a lesser resistance between input/output pad 10003 and primary solder bump 10005a than between input/output pad 10003 and secondary solder bumps 10005b or 10005c. Accordingly, current into and out of the input/output pad 10003 may flow primarily through primary bump 10005a providing a path of least resistance.
  • the conductive line segments 10001a- c may be provided between first and second insulating layers 10111 and 10115, and input/output pad 10003 may be provided between semiconductor substrate 10117 and first insulating layer 10111. Moreover, via holes in the second insulating layer 10115 may expose conductive pads 10001a', 10001b', and 10001c' respectively connected to the conductive line including segments 10001a-c, and under bump metallurgy layers 10121a-c may be provided between solder bumps 10005a-c and the respective conductive pads lOOOla'-c'.
  • the different segments 10001a-c of the conductive line may have different properties to provided further increases in resistance between solder bumps more distantly located from the input/output pad 10003.
  • a width of the segment 10001a may be greater than a width of the segment 10001b, and/or a width of the segment 10001b may be greater than a width of the segment 10001c.
  • a thickness of the segment 10001a may be greater than a thickness of the segment 10001b, and/or a thickness of the segment 10001b may be greater than a thickness of the segment 10001c.
  • a length of the segment 10001a may be less than a length of the segment 10001b, and/or a length of the segment 10001b may be less than a length of the segment 10001c.
  • one or both of the via holes through the insulating layer 10115 exposing conductive pads lOOOla'-c' may have a non- circular perimeter as discussed above with respect to Figures IA-C. More particularly, one or both of the via holes through the insulating layer 10115 exposing conductive pads lOOOla'-c 1 may have a "D" shaped and/or a crescent shaped perimeter as discussed above with respect to Figures IA-C.
  • under bump metallurgy layer refers to one or more conductive layers provided between a solder bump and a substrate.
  • An under bump metallurgy layer may include an adhesion layer (such as a layer of titanium, tungsten, chrome, and/or combinations thereof), a conduction layer (such as a layer of copper), and/or a barrier layer (such as a layer of nickel, platinum, palladium, and/or combinations thereof).
  • a solder bump may be a bump of one or more different solder materials.
  • a solder bump may include one or more of a single element, binary, ternary, and/or higher order solder; such as a lead-tin solder, a lead-bismuth solder, a lead-indium solder, a lead free solder, a tin-silver solder, a tin-silver-copper solder, an indium-tin solder, an indium-gallium solder, a gallium solder, an indium-bismuth solder, a tin- bismuth solder, an indium-cadmium solder, bismuth-cadmium solder, tin-cadmium, etc.
  • an under bump metallurgy layer may provide a surface that is wettable to a solder bump wherein the solder wettable surface of the under bump metallurgy layer and the solder bump comprise different materials.

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  • Microelectronics & Electronic Packaging (AREA)
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Abstract

L'invention concerne un dispositif à circuit intégré qui peut comprendre un substrat, une plage conductrice disposée sur une surface du substrat et une ligne conductrice disposée sur la surface du substrat. De plus, la ligne conductrice peut être connectée à la plage conductrice et la ligne conductrice peut être étroite par rapport à la plage conductrice. De plus, une couche isolante peut être appliquée sur le substrat, sur la ligne conductrice et sur des parties périphériques de la plage conductrice. La couche isolante peut être pourvue d'un trou qui laisse à découvert une partie centrale de la plage conductrice et un premier segment d'un périmètre du trou peut être sensiblement définir un arc de cercle autour de la partie centrale de la plage conductrice. Un second segment du périmètre du trou peut dévier sensiblement du cercle entourant la partie centrale de la plage conductrice et le second segment du périmètre du trou peut être adjacent à une connexion entre la ligne conductrice et la plage conductrice.
PCT/US2005/040584 2004-11-10 2005-11-08 Trous traversants non circulaires pour former des bossages sur des plages de connexion et des structures associees Ceased WO2006053036A2 (fr)

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