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WO2005119775A3 - Semiconductor structure comprising a stress sensitive element and method of measuring a stress in a semiconductor structure - Google Patents

Semiconductor structure comprising a stress sensitive element and method of measuring a stress in a semiconductor structure Download PDF

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Publication number
WO2005119775A3
WO2005119775A3 PCT/US2005/010474 US2005010474W WO2005119775A3 WO 2005119775 A3 WO2005119775 A3 WO 2005119775A3 US 2005010474 W US2005010474 W US 2005010474W WO 2005119775 A3 WO2005119775 A3 WO 2005119775A3
Authority
WO
WIPO (PCT)
Prior art keywords
stress
semiconductor structure
sensitive element
property
stress sensitive
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/US2005/010474
Other languages
French (fr)
Other versions
WO2005119775A2 (en
Inventor
Eckhard Langer
Ehrenfried Zschech
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Advanced Micro Devices Inc
Original Assignee
Advanced Micro Devices Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from DE102004026145A external-priority patent/DE102004026145A1/en
Application filed by Advanced Micro Devices Inc filed Critical Advanced Micro Devices Inc
Priority to JP2007515061A priority Critical patent/JP2008501119A/en
Priority to GB0624045A priority patent/GB2430306B/en
Priority to KR1020067027754A priority patent/KR101139009B1/en
Publication of WO2005119775A2 publication Critical patent/WO2005119775A2/en
Anticipated expiration legal-status Critical
Publication of WO2005119775A3 publication Critical patent/WO2005119775A3/en
Ceased legal-status Critical Current

Links

Classifications

    • H10P74/20
    • H10P74/00
    • H10P74/23
    • H10P74/277
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/0002Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Pressure Sensors (AREA)
  • Measuring Fluid Pressure (AREA)

Abstract

A semiconductor structure comprises a stress sensitive element. A property of the stress sensitive element is representative of a stress in the semiconductor structure (100). Additionally, the semiconductor structure may comprise an electrical element (110). The stress sensitive element and the electrical element comprise portions of a common layer structure (107). Analyzers may be adapted to determine a property of the stress sensitive element being representative of a stress in the semiconductor structure (100) and a property of the electrical element (110). The property of the stress sensitive element maybe determined and the manufacturing process may be modified based on the determined property of the stress sensitive element. The property of the electrical element (110) may be related to the property of the stress sensitive element in order to investigate an influence of stress on the electrical element.
PCT/US2005/010474 2004-05-28 2005-03-29 Semiconductor structure comprising a stress sensitive element and method of measuring a stress in a semiconductor structure Ceased WO2005119775A2 (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2007515061A JP2008501119A (en) 2004-05-28 2005-03-29 Semiconductor structure having stress sensitive elements and method for measuring stress in a semiconductor structure
GB0624045A GB2430306B (en) 2004-05-28 2005-03-29 Semiconductor structure comprising a stress sensitive element and method of measuring a stress in a semiconductor structure
KR1020067027754A KR101139009B1 (en) 2004-05-28 2005-03-29 Semiconductor structure comprising a stress sensitive element and method of measuring a stress in a semiconductor structure

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
DE102004026145.8 2004-05-28
DE102004026145A DE102004026145A1 (en) 2004-05-28 2004-05-28 Semiconductor structure with a voltage sensitive element and method for measuring an elastic stress in a semiconductor structure
US11/058,706 2005-02-15
US11/058,706 US7311008B2 (en) 2004-05-28 2005-02-15 Semiconductor structure comprising a stress sensitive element and method of measuring a stress in a semiconductor structure

Publications (2)

Publication Number Publication Date
WO2005119775A2 WO2005119775A2 (en) 2005-12-15
WO2005119775A3 true WO2005119775A3 (en) 2007-04-12

Family

ID=34967237

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2005/010474 Ceased WO2005119775A2 (en) 2004-05-28 2005-03-29 Semiconductor structure comprising a stress sensitive element and method of measuring a stress in a semiconductor structure

Country Status (4)

Country Link
JP (1) JP2008501119A (en)
KR (1) KR101139009B1 (en)
GB (1) GB2430306B (en)
WO (1) WO2005119775A2 (en)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010506407A (en) * 2006-10-03 2010-02-25 ケーエルエー−テンカー コーポレイション Pressure and / or shear force detection system
KR102583823B1 (en) * 2021-02-10 2023-09-26 재단법인대구경북과학기술원 Method of forming a thin film with curvature and electronic device manufactured by the same
CN119374768B (en) * 2024-10-31 2025-10-17 西安微电子技术研究所 Structure and method for measuring chip bonding residual stress based on pressure measurement film

Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0378098A2 (en) * 1989-01-10 1990-07-18 Hitachi, Ltd. Semiconductor optical device
US5204540A (en) * 1990-03-26 1993-04-20 Mitsubishi Denki Kabushiki Kaisha Resin sealed semiconductor device for use in testing and evaluation method of stress due to resin seal
US5214729A (en) * 1991-12-31 1993-05-25 Gte Laboratories Incorporated Dynamic optical data buffer
EP0740139A1 (en) * 1995-04-26 1996-10-30 Fraunhofer-Gesellschaft Zur Förderung Der Angewandten Forschung E.V. Device for in situ measurement of stress in films
US6493497B1 (en) * 2000-09-26 2002-12-10 Motorola, Inc. Electro-optic structure and process for fabricating same
US20020190252A1 (en) * 2000-10-24 2002-12-19 Adams Edward D. In-line electrical monitor for measuring mechanical stress at the device level on a semiconductor wafer
US6509201B1 (en) * 2001-04-11 2003-01-21 Advanced Micro Devices, Inc. Method and apparatus for monitoring wafer stress
US20030098704A1 (en) * 2001-11-26 2003-05-29 Tevet Process Control Technologies Ltd. Method and apparatus for measuring stress in semiconductor wafers
US6600565B1 (en) * 2000-04-25 2003-07-29 California Institute Of Technology Real-time evaluation of stress fields and properties in line features formed on substrates
US20040098216A1 (en) * 2002-11-04 2004-05-20 Jun Ye Method and apparatus for monitoring integrated circuit fabrication

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63271975A (en) * 1987-04-28 1988-11-09 Nippon Denso Co Ltd Pressure sensor and manufacture thereof
JPH03228347A (en) * 1990-02-02 1991-10-09 Hitachi Ltd Semiconductor element internal stress control method
JPH06349919A (en) * 1993-06-04 1994-12-22 Japan Energy Corp Method of measuring stress in metal thin film
JPH0843227A (en) * 1994-07-26 1996-02-16 Mitsubishi Heavy Ind Ltd Optical waveguide type pressure sensor
JPH09129528A (en) * 1995-11-02 1997-05-16 Hitachi Ltd Semiconductor device manufacturing method and device
JP2003207398A (en) * 2002-01-10 2003-07-25 Kobe Steel Ltd Method for predicting stress distribution and device for simulating stress distribution

Patent Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0378098A2 (en) * 1989-01-10 1990-07-18 Hitachi, Ltd. Semiconductor optical device
US5204540A (en) * 1990-03-26 1993-04-20 Mitsubishi Denki Kabushiki Kaisha Resin sealed semiconductor device for use in testing and evaluation method of stress due to resin seal
US5214729A (en) * 1991-12-31 1993-05-25 Gte Laboratories Incorporated Dynamic optical data buffer
EP0740139A1 (en) * 1995-04-26 1996-10-30 Fraunhofer-Gesellschaft Zur Förderung Der Angewandten Forschung E.V. Device for in situ measurement of stress in films
US6600565B1 (en) * 2000-04-25 2003-07-29 California Institute Of Technology Real-time evaluation of stress fields and properties in line features formed on substrates
US6493497B1 (en) * 2000-09-26 2002-12-10 Motorola, Inc. Electro-optic structure and process for fabricating same
US20020190252A1 (en) * 2000-10-24 2002-12-19 Adams Edward D. In-line electrical monitor for measuring mechanical stress at the device level on a semiconductor wafer
US6509201B1 (en) * 2001-04-11 2003-01-21 Advanced Micro Devices, Inc. Method and apparatus for monitoring wafer stress
US20030098704A1 (en) * 2001-11-26 2003-05-29 Tevet Process Control Technologies Ltd. Method and apparatus for measuring stress in semiconductor wafers
US20040098216A1 (en) * 2002-11-04 2004-05-20 Jun Ye Method and apparatus for monitoring integrated circuit fabrication

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
CHEN X ET AL: "Annealing and oxidation of silicon oxide films prepared by plasma-enhanced chemical vapor deposition", JOURNAL OF APPLIED PHYSICS, AMERICAN INSTITUTE OF PHYSICS. NEW YORK, US, vol. 97, no. 1, 16 December 2004 (2004-12-16), pages 14913 - 14913, XP012069283, ISSN: 0021-8979 *

Also Published As

Publication number Publication date
KR20070028471A (en) 2007-03-12
GB0624045D0 (en) 2007-01-10
GB2430306B (en) 2009-10-21
WO2005119775A2 (en) 2005-12-15
JP2008501119A (en) 2008-01-17
KR101139009B1 (en) 2012-04-25
GB2430306A (en) 2007-03-21

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