WO2005117154B1 - High-density integrated type thin-layer thermoelectric module and hybrid power generating system - Google Patents

Abstract

A thin-layer thermoelectric element pair unit is modularized into a high-density integrated type to thereby improve its adaptability to various applications. Many P-type and N-type thin-layer thermoelectric semiconductor element pair units and thin-layer electrodes are formed on a flexible heat-insulating/electricity-insulating sheet, electrodes are formed so as to hold the thermoelectric semiconductor element pair units from the opposite sides and allow the low-temperature side to overlap the high-temperature side in order to improve a thermoelectric effect and to provide a broader contact area between electrodes and thermoelectric semiconductor pair units, and the sheet is bent or coiled to effect three-dimensional working, whereby a high-density integrated type thin-layer thermoelectric module is produced. An air layer or a heat-insulating element layer may be interposed between adjacent thermoelectric element units, or a sheet-form film may be used to seal the surrounding against moisture and stain.

Claims

 Claims for the amendments Claims for the amendments [January 7, 2007 (0 7. 1 1. 0 5) Accept the International Bureau: Claim originally filed in the application 2-7 is amended The first claim of the application was withdrawn. (1 page)] (Delete)  2-(After correction) A thin layer of P-type thermoelectric semiconductor element, a thin layer of N-type thermoelectric semiconductor element and each thermoelectric semiconductor element in the vertical direction on a thermally insulating and electrically insulating flexible thin sheet By arranging each thin layer of the electrodes to be joined in a plurality of rows and bending approximately the central part of the electrodes in a zigzag along a lateral bending line, a large number of π-structured thermoelectric elements can be formed in three dimensions. A degree-integrated thin-layer thermoelectric module is characterized in that it is formed so that two sides of the three-dimensional lateral bending of the surface form a low side and a high temperature, respectively.  3-(After correction) When joining a thin layer electrode to a thin layer of a thermoelectric semiconductor element, the electrode sandwiches or surrounds the thermoelectric semiconductor element from the end face to the side face of the thermoelectric semiconductor element, and the electrode and the thermoelectric semiconductor element It is characterized in that the current density is increased by increasing the contact area of the 5 High density integrated thin layer thermoelectric module according to claim 2  4-(After correction) When joining a thin layer electrode to a thin layer of a thermoelectric semiconductor element, make the surface of the part in contact with the electrode of the thermoelectric semiconductor element non-planar so that the contact area between the thin layer of the thermoelectric semiconductor element and the electrode is substantially Wide The high density integrated thin-layer thermoelectric module according to claim 2 or claim 3, characterized in that the current density is increased by the step.  5. (After correction) A thin layer of each thermoelectric semiconductor element has a hole shape and / or an intermediate shape in the middle portion between the low temperature side and the high temperature side to reduce the through flow, The high density * type thin layer thermal thin film thermal conductivity according to SB claim 2 to claim 4 characterized by adjusting the resistance value of the thin layer of the element 6. (After correction) No permanent matter 2 having a vacuum air layer and / or a thermally insulating and highly electrically insulating layer between or in the entire part forming the high density integrated thin layer thermoelectric module.  The high density integrated thin layer thermoelectric module according to claim 5  7 (After correction) The solar cell power generator and one or more high density integrated thin layer thermoelectric modules mounted on the back of the solar cell power generator, the high density integrated thin layer thermoelectric modules Claim A hype y power generation system characterized by having a configuration of 6

Article 2 of the Convention Article 19 clarified that thin layers of thermoelectric semiconductor elements and thin layers of electrodes for joining thermoelectric semiconductor elements are arranged in multiple rows. In the cited example (Japanese Patent Application Laid-Open No. Hei 8 15 3 8 9 8), there is an example using a large number of insulating substrates, but in the present invention, a plurality of rows of semiconductor elements are arranged on one sheet and The center-folded structure offers excellent productivity and density. Also, although the cited example (Japanese Patent Application Laid-Open No. 2 0 0 4 0 4 0 4 1) has a folded structure using square bar or round bar semiconductor elements, the present invention uses sheet and thin layer electrodes. It has a folded structure and excellent integration density. Claims 3 and 7 removed the first claim of the deleted claim from the citation.