[go: up one dir, main page]

WO2005114755A3 - Tellurides having novel property combinations - Google Patents

Tellurides having novel property combinations Download PDF

Info

Publication number
WO2005114755A3
WO2005114755A3 PCT/EP2005/005345 EP2005005345W WO2005114755A3 WO 2005114755 A3 WO2005114755 A3 WO 2005114755A3 EP 2005005345 W EP2005005345 W EP 2005005345W WO 2005114755 A3 WO2005114755 A3 WO 2005114755A3
Authority
WO
WIPO (PCT)
Prior art keywords
tellurides
property combinations
novel property
telluride
generators
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/EP2005/005345
Other languages
German (de)
French (fr)
Other versions
WO2005114755A2 (en
Inventor
Hans-Josef Sterzel
Klaus Kuehling
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
BASF SE
Original Assignee
BASF SE
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by BASF SE filed Critical BASF SE
Publication of WO2005114755A2 publication Critical patent/WO2005114755A2/en
Publication of WO2005114755A3 publication Critical patent/WO2005114755A3/en
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B19/00—Selenium; Tellurium; Compounds thereof
    • C01B19/002—Compounds containing, besides selenium or tellurium, more than one other element, with -O- and -OH not being considered as anions
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B19/00—Selenium; Tellurium; Compounds thereof
    • C01B19/007—Tellurides or selenides of metals
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
    • H10N10/80—Constructional details
    • H10N10/85—Thermoelectric active materials
    • H10N10/851—Thermoelectric active materials comprising inorganic compositions
    • H10N10/852—Thermoelectric active materials comprising inorganic compositions comprising tellurium, selenium or sulfur
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
    • H10N10/80—Constructional details
    • H10N10/85—Thermoelectric active materials
    • H10N10/851—Thermoelectric active materials comprising inorganic compositions
    • H10N10/8556—Thermoelectric active materials comprising inorganic compositions comprising compounds containing germanium or silicon
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2002/00—Crystal-structural characteristics
    • C01P2002/50—Solid solutions
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2006/00—Physical properties of inorganic compounds
    • C01P2006/40—Electric properties

Landscapes

  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Organic Chemistry (AREA)
  • Silicon Compounds (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

The invention relates to thermoelectric generators or Peltier arrays which comprise a telluride as the thermoelectrically active semiconducting element. The inventive generators or Peltier arrays are characterized in that the positively polarized atoms of the crystal lattice of the telluride are partially replaced by silicon and/or germanium.
PCT/EP2005/005345 2004-05-18 2005-05-17 Tellurides having novel property combinations Ceased WO2005114755A2 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102004025066A DE102004025066A1 (en) 2004-05-18 2004-05-18 Telluride with new property combinations
DE102004025066.9 2004-05-18

Publications (2)

Publication Number Publication Date
WO2005114755A2 WO2005114755A2 (en) 2005-12-01
WO2005114755A3 true WO2005114755A3 (en) 2006-05-11

Family

ID=34969830

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/EP2005/005345 Ceased WO2005114755A2 (en) 2004-05-18 2005-05-17 Tellurides having novel property combinations

Country Status (3)

Country Link
DE (1) DE102004025066A1 (en)
TW (1) TW200602259A (en)
WO (1) WO2005114755A2 (en)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102005008865A1 (en) * 2005-02-24 2006-08-31 Basf Ag Modified bismuth sulfide composition, useful in semiconductor material, which is used in e.g. thermoelectric modules and photovoltaic cells is new
CA2646191A1 (en) 2006-03-16 2007-09-20 Basf Se Doped lead tellurides for thermoelectric applications
WO2007104603A2 (en) * 2006-03-16 2007-09-20 Basf Se Lead-germanium-tellurides for thermoelectrical applications
CN115368136B (en) * 2022-08-26 2023-07-14 武汉理工大学 A method suitable for batch preparation of polycrystalline Bi2Te3-based bulk thermoelectric materials

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3224876A (en) * 1963-02-04 1965-12-21 Minnesota Mining & Mfg Thermoelectric alloy
US3969743A (en) * 1975-04-23 1976-07-13 Aeronutronic Ford Corporation Protective coating for IV-VI compound semiconductor devices
EP0115950A2 (en) * 1983-01-31 1984-08-15 Energy Conversion Devices, Inc. New powder pressed N-type thermoelectric materials and method of making same
JPS60221309A (en) * 1984-04-18 1985-11-06 Japan Spectroscopic Co Manufacture of pbte
GB2259098A (en) * 1991-08-30 1993-03-03 Univ Cardiff Electrochemical preparation of single phase lead telluride
EP1342828A2 (en) * 2002-02-21 2003-09-10 Theodor Blum Laundry drier
WO2004090998A2 (en) * 2003-04-11 2004-10-21 Basf Aktiengesellschaft Pb-ge-te-compounds for thermoelectric generators or peltier arrangements

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3224876A (en) * 1963-02-04 1965-12-21 Minnesota Mining & Mfg Thermoelectric alloy
US3969743A (en) * 1975-04-23 1976-07-13 Aeronutronic Ford Corporation Protective coating for IV-VI compound semiconductor devices
EP0115950A2 (en) * 1983-01-31 1984-08-15 Energy Conversion Devices, Inc. New powder pressed N-type thermoelectric materials and method of making same
JPS60221309A (en) * 1984-04-18 1985-11-06 Japan Spectroscopic Co Manufacture of pbte
GB2259098A (en) * 1991-08-30 1993-03-03 Univ Cardiff Electrochemical preparation of single phase lead telluride
EP1342828A2 (en) * 2002-02-21 2003-09-10 Theodor Blum Laundry drier
WO2004090998A2 (en) * 2003-04-11 2004-10-21 Basf Aktiengesellschaft Pb-ge-te-compounds for thermoelectric generators or peltier arrangements

Non-Patent Citations (5)

* Cited by examiner, † Cited by third party
Title
CHOI J-S ET AL: "Thermoelectric properties of n-type (Pb1-xGex)Te fabricated by hot pressing method", THERMOELECTRICS, 1997. PROCEEDINGS ICT '97. XVI INTERNATIONAL CONFERENCE ON DRESDEN, GERMANY 26-29 AUG. 1997, NEW YORK, NY, USA,IEEE, US, 26 August 1997 (1997-08-26), pages 228 - 231, XP002296046, ISBN: 0-7803-4057-4 *
KOHRI H ET AL: "IMPROVEMENT OF THERMOELECTRIC PROPERTIES FOR N-TYPE PBTE BY ADDING GE", MATERIALS SCIENCE FORUM, AEDERMANNSFDORF, CH, vol. 423-425, 2003, pages 381 - 384, XP008035344, ISSN: 0255-5476 *
NIKOLIC, P.M.: "Solid solution of lead-germanium chalcogenide alloys and some of their optical properties", J. APPL. PHYS. D: APPL. PHYS., vol. 2, March 1969 (1969-03-01), Great Britain, pages 383 - 388, XP002371551 *
PATENT ABSTRACTS OF JAPAN vol. 010, no. 090 (C - 337) 8 April 1986 (1986-04-08) *
YASHINA L V ET AL: "Germanium diffusion in lead telluride crystal", SOLID STATE IONICS, NORTH HOLLAND PUB. COMPANY. AMSTERDAM, NL, vol. 101-103, November 1997 (1997-11-01), pages 533 - 538, XP004382576, ISSN: 0167-2738 *

Also Published As

Publication number Publication date
WO2005114755A2 (en) 2005-12-01
TW200602259A (en) 2006-01-16
DE102004025066A1 (en) 2005-12-08

Similar Documents

Publication Publication Date Title
WO2009125317A3 (en) Seebeck/peltier bidirectional thermo- electric conversion device using nanowires of conductor or semiconductor material
WO2007133894A3 (en) Low dimensional thermoelectrics fabricated by semiconductor wafer etching
US10229996B2 (en) Strained stacked nanowire field-effect transistors (FETs)
EP2513988B8 (en) Seebeck/peltier thermoelectric conversion element with parallel nanowires of conductor or semiconductor material organized in rows and columns through an insulating body and process
EP2230332A4 (en) SINGLE CRYSTAL SILICON CARBIDE BLOCK AND SUBSTRATE AND EPITAXIAL WAFERS MADE FROM THE SINGLE CRYSTAL SILICON CARBIDE BLOCK
TWI371782B (en) Nitride crystal, nitride crystal substrate, epilayer-containing nitride crystal substrate, semiconductor device and method of manufacturing the same
WO2003096385A3 (en) Silicon-on-insulator structures and methods
WO2011019163A3 (en) Electronic apparatus
TWI256140B (en) Strained transistor integration for CMOS
WO2004084264A3 (en) DUAL STRAIN-STATE SiGe LAYERS FOR MICROELECTRONICS
TWI348200B (en) Method of forming strained si/sige on insulator with silicon germanium buffer
TW200802720A (en) Engineering strain in thick strained-SOI substrates
TW200711148A (en) Stressed field effect transistors on hybrid orientation substrate
WO2007103249A3 (en) Methods of forming thermoelectric devices using islands of thermoelectric material and related structures
WO2007110700A3 (en) Chlamydial antigens
WO2012088097A3 (en) Column iv transistors for pmos integration
TWI366264B (en) Dual stressed soi substrates
TW200625702A (en) Integrated thermoelectric cooling devices and methods for fabricating same
TW200634974A (en) Semiconductor device and manufacturing method thereof
TW200640008A (en) Structure and method of fabricating a hybrid substrate for high-performance hybrid-orientation silicon-on-insulator CMOS devices
JP2008503104A5 (en)
TW200717718A (en) Dual trench isolation for CMOS with hybrid orientations
EP1783824A4 (en) METHOD FOR MANUFACTURING P-TYPE SEMICONDUCTORS AND SEMICONDUCTOR ELEMENT
WO2006022780A3 (en) Method for fabricating crystalline silicon
TW200610001A (en) Strained Si on multiple materials for bulk or SOI substrates

Legal Events

Date Code Title Description
AK Designated states

Kind code of ref document: A2

Designated state(s): AE AG AL AM AT AU AZ BA BB BG BR BW BY BZ CA CH CN CO CR CU CZ DE DK DM DZ EC EE EG ES FI GB GD GE GH GM HR HU ID IL IN IS JP KE KG KM KP KR KZ LC LK LR LS LT LU LV MA MD MG MK MN MW MX MZ NA NG NI NO NZ OM PG PH PL PT RO RU SC SD SE SG SK SL SM SY TJ TM TN TR TT TZ UA UG US UZ VC VN YU ZA ZM ZW

AL Designated countries for regional patents

Kind code of ref document: A2

Designated state(s): GM KE LS MW MZ NA SD SL SZ TZ UG ZM ZW AM AZ BY KG KZ MD RU TJ TM AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HU IE IS IT LT LU MC NL PL PT RO SE SI SK TR BF BJ CF CG CI CM GA GN GQ GW ML MR NE SN TD TG

121 Ep: the epo has been informed by wipo that ep was designated in this application
DPE1 Request for preliminary examination filed after expiration of 19th month from priority date (pct application filed from 20040101)
NENP Non-entry into the national phase

Ref country code: DE

WWW Wipo information: withdrawn in national office

Country of ref document: DE

122 Ep: pct application non-entry in european phase