WO2005111261A1 - Spattering target and method of manufacturing the same - Google Patents

Abstract

A spattering target used when a thin-film is manufactured by spattering and a method of manufacturing the spattering target. The spattering target comprises backing plates and a bonding material layer for sticking them to each other. A spacer is not present in the bonding material layer, the thickness of the bonding material layer is within the range of 0.25 to 2 mm, and the sticking surface of the target and the sticking surfaces of the backing plates are substantially kept parallel with each other.

Description

 Sputtering target and method for manufacturing the same

 Technical field

 The present invention relates to a sputtering target used for producing a thin film by sputtering and a method for producing the same, and more specifically, a target, a knocking plate, and a bonding material layer formed by laminating the target and the knocking plate. The present invention relates to a sputtering target and a method for manufacturing the sputtering target, wherein a spacer is present in a bonding material layer.

 Background art

 [0002] In the film forming method by sputtering, a thin film having a strong adhesive force can be easily obtained, the film thickness can be easily controlled, and a thin film of a high melting point material having good reproducibility in thinning an alloy can be easily formed. Since it has certain features, such as film formation of materials for electronic and electrical parts such as semiconductors, for example, production of transparent conductive films for liquid crystal displays, production of recording layers for hard disks, production of wiring materials for semiconductor memories, etc. Widely used in the field.

 [0003] In such a film forming method by sputtering, as a sputtering target, a target made of a constituent material of a thin film to be formed, and a backing plate having excellent conductivity and thermal conductivity are also used as a bonding material. In general, a configuration in which the components are bonded together via a wire is used. In such a case, as the material of the knocking plate, for example, copper having excellent electrical conductivity and thermal conductivity, preferably oxygen-free copper, titanium, stainless steel, or the like is used. As a bonding material used for bonding, for example, a bonding brazing material made of a low-melting metal such as an In-based or Sn-based metal is used.

[0004] Further, as a method of bonding the target and the backing plate, for example, a bonding material is disposed between the target and the backing plate, and by heating them simultaneously, the target and the backing plate are bonded together. The bonding material is melted and filled in between, and cooled to room temperature in this state to bond the target and the backing plate. A melt of the bonding material is formed by heating before or after the application of the bonding material, and then the target is bonded to the backing plate via the bonding material layer, and then cooled to room temperature in this state. Therefore, a method of bonding the target and the backing plate is adopted.

 [0005] Such a bonding material layer used for bonding the target and the backing plate includes (1) a buffering property for absorbing a difference in thermal expansion due to a difference in thermal expansion coefficient between the target and the backing plate; (2) Relaxation and absorption of thermal stress during sputtering, (3) Strain generated when attached to sputtering equipment, and relaxation and absorption of deformation stress applied from the back of the backing plate due to atmospheric pressure during evacuation are required. Therefore, the bonding material layer needs to be thick to some extent.

 [0006] When a target and a backing plate are bonded to each other by a conventional method using a bonding material such as a low melting point metal, it is difficult to adjust the thickness of the bonding material layer if the thickness of the bonding material layer is increased to some extent. However, the thickness of the bonding material layer for each sputtering target product is not necessarily constant, so when sputtering is performed using such a sputtering target having a different thickness of the bonding material layer, discharge is performed for each sputtering target. There is a problem that the voltage changes. In addition, in many cases, the parallel relationship between the bonding surface of the target and the bonding surface of the backing plate cannot be maintained. It is not preferable because uneven wear may occur on the sputtering surface of the target.

 [0007] For this reason, a spacer such as a copper plate or a wire is interposed between the target and the backing plate to increase the thickness of the bonding material layer and maintain the above-described parallel relationship. It has been proposed to solve the above problem (for example, see Patent Documents 1, 2, and 3). However, in these methods, the bonding material layer becomes thinner in the portion where the spacer exists, and the deformation stress is concentrated immediately and the spacer hinders the deformation of the bonding material layer. Cracks may occur at the contact part with the spacer or at the bonding material part near the part.

Patent Document 1: JP-A-63-317668 Patent Document 2: Japanese Patent Application Laid-Open No. 08-170170

 Patent Document 3: JP-A-11-200028

 Disclosure of the invention

 Problems to be solved by the invention

 [0009] In view of the above situation, the present invention provides a sputtering target in which a target and a backing plate are bonded using a bonding material, and the thickness of the bonding material layer is increased without using a spacer. It is a first object of the present invention to provide a sputtering target in which the bonding surface of the target and the bonding surface of the backing plate are kept substantially parallel, and a method of manufacturing the same.

 [0010] Further, it is a second object of the present invention to provide a sputtering target and a method for manufacturing the same, in addition to the above-described characteristics, in which the bonding material is less likely to fly out during sputtering.

 Means for solving the problem

 [0011] As a result of intensive studies to achieve the above objects, the thickness of the bonding material layer was controlled using a heat-resistant temporary spacer, and the bonding surface of the target and the bonding surface of the backing plate were used. Are maintained substantially parallel to each other to obtain a sputtering target as the first object, and furthermore, a heat-resistant temporary spacer is provided on the surface to be bonded of the target using a temporary spacer. By controlling the range of the bonding material to be used, it has been found that a sputtering target as the second object can be obtained, and the present invention has been completed.

 [0012] That is, the sputtering target of the present invention provides a bonding layer with a target, a backing plate, and a bonding material that is bonded to each other, and there is no spacer in the bonding material layer. The thickness of the material layer is in the range of 0.25 to 2 mm, and the bonding surface of the target and the bonding surface of the backing plate are kept substantially parallel.

[0013] In addition, the sputtering target of the present invention has a bonding material layer and a force by bonding the target, the backing plate, and the bonding material, and there is no spacer in the bonding material layer. The thickness of the material layer is in the range of 0.25 to 2 mm and the target The bonding surface of the backing plate and the bonding surface of the backing plate are kept substantially parallel, and a bonding material is provided between at least part of the periphery of the bonding surface of the target and the backing plate. It does not exist.

[0014] Further, the method for manufacturing a sputtering target of the present invention is arranged such that the surface of the target bonded to the bonding material layer and the surface of the backing plate bonded to the bonding material layer can be kept substantially parallel. Or ( _{2) the} position where the heat-resistant temporary spacer can be placed on the surface of the target. ( ₃₎ A force that is detachably disposed on the surface of the backing plate on the side of the bonding surface in a plane-symmetric arrangement, or ( ₃₎ a force that is detachably disposed on both. The total thickness is adjusted so as to be substantially constant within the range of 0.25 to 2 mm, the force for forming a melt of the bonding material on the bonding surface of the target, and the bonding of the backing plate. The bonding material melt is formed on the surface of the bonding surface in a position that is symmetrical to the position where the bonding material melt can be formed on the target surface, or the bonding material melt is applied to both. Formed, and then the target and the backing plate are bonded to each other via the bonding material layer. At this time, a heat-resistant temporary spacer is provided on both sides so as to be detachable! Then, the target and the backing plate are bonded to each other via a bonding material layer such that the heat-resistant temporary spacers are in plane symmetry, and after cooling, those heat-resistant temporary spacers are removed. It is characterized by the following.

[0015] In the method for manufacturing a sputtering target of the present invention, the heat-resistant temporary spacer may be (1) detachably disposed around the entire periphery of the target surface to be bonded to the bonding material layer; ) The heat-resistant temporary spacer on the surface of the target is arranged in a plane-symmetrical manner with respect to the position where the heat-resistant temporary spacer can be arranged. ) And detachably arranged on both sides, adjusting the total thickness of the heat-resistant temporary spacer so that it is substantially constant within the range of 0.25 to 2 mm. Forming a melt of the bonding material on the surface of the backing plate, or on the surface of both surfaces, surrounded by the heat-resistant temporary spacer, and then bonding the target and the backing plate to the bonding material. Layers Pasted through In this case, when a heat-resistant temporary spacer is detachably disposed on both of them, the target and the backing plate have a plane-symmetrical heat-resistant temporary spacer. It is characterized in that it is bonded via a bonding material layer so as to match, and after cooling, those heat-resistant temporary spacers are removed.

In the present invention, “maintained substantially in parallel” and “substantially constant value” are acceptable in the art for a sputtering target in which a backing plate and a target are bonded. This means that the degree of parallelism between the backing plate and the target is assured, and the "total thickness of the heat-resistant temporary spacer" means that the heat-resistant temporary spacer is only attached to the surface on the side where the target is bonded. When it is arranged only on the bonding surface side of the backing plate, it means its thickness, and when it is arranged on both, it means the total thickness of both.

 The invention's effect

 In the sputtering target of the present invention, the spacer is not present in the bonding material layer, the thickness of the bonding material layer is constant, and the bonding surface of the target substantially adheres to the bonding surface of the backing plate. Because it is kept parallel, the discharge voltage does not change for each sputtering target, and uneven wear does not occur on the sputtering surface of the sputtering target with the elapse of the sputtering time. Nothing. Further, when there is no bonding material between at least a part of the periphery of the bonding surface of the target and the backing plate, there is little danger of the bonding material jumping out during sputtering.

 Brief Description of Drawings

FIG. 1 is a schematic sectional view showing one example of a sputtering target of the present invention.

 FIG. 2 is a schematic explanatory view showing an arrangement position of a heat-resistant temporary spacer in the method for producing a sputtering target of the present invention.

 FIG. 3 is a schematic explanatory view showing an arrangement position of a heat-resistant temporary spacer on a target surface in a method for producing a sputtering target of the present invention.

FIG. 4 is a schematic explanatory view showing an arrangement position of a heat-resistant temporary spacer on the surface of a two-piece target in the method for producing a sputtering target of the present invention. FIG. 5 is a schematic explanatory view showing an arrangement position of a heat-resistant temporary spacer on the surface of a three-part target in the method for producing a sputtering target of the present invention.

 FIG. 6 is a schematic cross-sectional view showing a state of another stage of the manufacturing process of the sputtering target of the present invention.

 FIG. 7 is a schematic explanatory view showing a state of a pressure resistance test.

 Explanation of symbols

[0019] 1 target

 2 Backing plate

 3 Bonding material layer

 5 Position where the heat resistant temporary spacer is detachably installed

 6 Position where the heat resistant temporary spacer is detachably installed

 7 Heat resistant temporary spacer

 8 Heat resistant temporary spacer

 9 jig

 BEST MODE FOR CARRYING OUT THE INVENTION

[0020] As shown in Fig. 1, the sputtering target of the present invention, which also has a target 1, a knocking plate 2, and a bonding material layer 3 that bonds them together, has a strength! There is no spacer in the layer, the thickness of the bonding material layer is in the range of 0.25 to 2 mm, and the bonding surface of the target and the bonding surface of the backing plate are kept substantially parallel. ing. In another embodiment of the present invention, the spacer is not present in the bonding material layer, the thickness of the bonding material layer is in the range of 0.25 to 2 mm, and the bonding surface of the target and the backing surface are different from each other. The bonding surface of the plate is kept substantially parallel to the bonding surface of the target, and a bonding material exists in at least a part of the periphery of the surface on the bonding surface side of the target, for example, between the entire circumference and the backing plate.ヽ

[0021] In the sputtering target of the present invention, the target 1 may be formed of any material generally used as a target, for example, chromium, titanium, aluminum, ITO (In-Sn), Si02 and the like. What is formed of the material can be used . In the sputtering target of the present invention, the target 1 may be a divided target in which a plurality of targets of different materials are bonded on one backing plate.

 [0022] In the sputtering target of the present invention, the backing plate 2 may be formed of any material commonly used as a backing plate. For example, copper having excellent electrical conductivity and heat conductivity, particularly copper Those formed of a material such as oxygen copper, titanium, and stainless steel can be used. Further, in the sputtering target of the present invention, the thickness of the knocking plate is, for example, Cu CFIS C in consideration of strength.

 In the case of 1020), it is desirable to set it to 10 mm to 50 mm!

 In the sputtering target of the present invention, the bonding material layer 3 is generally used as a bonding material, and may be formed of such a material. It is formed of a bonding brazing material that also has a low melting point metal force such as Sn-based. The thickness of the bonding material layer is preferably 2 mm or less. If the thickness is more than 2 mm, the reduction of the leakage magnetic flux becomes too large, and the discharge voltage during sputtering becomes unstable. Therefore, it is more preferable that the thickness be 1.5 mm or less. However, from the viewpoint of preventing cracking and peeling of the sputtering target, the thickness of the bonding material layer is more preferably 0.25 mm or more, more preferably 0.5 mm or more.

 [0024] In the sputtering target of the present invention, a crack is not generated in the bonding material portion, so that a spacer is present in the bonding material layer! In order to prevent uneven wear on the sputtering surface of the sputtering target as the sputtering time elapses, the bonding surface of the target and the backing plate must be bonded. The plane must be kept substantially parallel.

[0025] In the sputtering target of the present invention, in order to reduce the risk of the bonding material jumping out during sputtering, at least a part of the periphery of the bonding surface side of the target, for example, the entire periphery thereof is required. No bonding material exists between the backing plate and the backing plate (ie, at least around the periphery of the target side surface). Part, for example, between the entire circumference and the backing plate, 4 is not filled with the bonding material, and at least part of the periphery of the surface on the bonding surface side of the target, for example, the entire circumference also faces the part. It is preferable that the bonding material does not adhere to the surface of the backing plate in the portion where the bonding material exists.

In the method for manufacturing a sputtering target of the present invention, first, as shown in FIGS. 2 to 5, for example, a target surface bonded to the bonding material layer and a backing plate surface bonded to the bonding material layer. In order to keep the target substantially parallel, the heat-resistant temporary spacer is provided with (1) at least three fulcrum portions that can support the target 1 around the bonding surface side surface of the target 1. Or (2) the backing plate 2 in an arrangement 6 that is plane-symmetric with the position where the heat-resistant temporary spacer on the surface of the target 1 can be arranged. Either detachable on the bonding surface or (3) Both detachable. When the target 1 is a divided target composed of a plurality of targets of the same material or different materials, the target surface of each of the divided targets bonded to the bonding material layer and the backing plate bonded to the bonding material layer are used. In order to keep the surface substantially parallel to the surface, a heat-resistant temporary spacer is used for (1) each of the divided targets around the bonding surface side surface of each of the divided targets. Either removably be installed at each of the portions including at least three fulcrum portions that can support the target, or (2) where the heat-resistant temporary spacer on the surface of each target of the split target can be installed Can be detachably arranged on the surface of the backing plate 2 on the bonding surface side, or (3) detachable from both. To be installed in

 [0027] As an example of the above-mentioned "portion including at least three fulcrum portions that can support the target around the surface to be bonded of the target", the entire circumference is 5 as shown in FIG. In addition to the cases, there are various embodiments as shown in FIGS. 3 (a) to 3 (d) show the case of a single plate target, and FIGS. 4 (a) to 4 (d) show the case of a two-part target, and FIGS. (D) shows the case of a three-split target.

[0028] The heat-resistant temporary spacer used in the manufacturing method of the present invention may be made of any material as long as it can be removed after cooling and solidifying the bonding material layer. . Examples of such a material include metals or alloys such as copper, stainless steel, aluminum, nickel, and zinc; ceramics; and heat-resistant resins such as Teflon (registered trademark). However, it is preferable to remove the spacer after cooling and solidifying the bonding material layer, so that the material does not substantially burn out at the melting temperature of the bonding material, does not plastically deform, does not react with the bonding material, or does not react with the alloy. Those without a layer, those having a linear expansion coefficient equal to or higher than the linear expansion coefficient of the bonding material, those having an appropriate elastic deformation, those having an appropriate strength, and the like.

[0029] The shape of the heat-resistant temporary spacer used in the production method of the present invention may be any shape such as a tape shape, a plate shape, a wire shape, a rod shape (square or round), a disk shape, a triangular prism shape having a low height, and the like. It may be shaped. In addition, as a method of disposing the spacer so that it can be detached, a method of temporarily fixing the adhesive using an adhesive, and a method of attaching the spacer to the surface, the side surface, and the back surface of the target or the backing plate on the bonding surface are used. Bending the spacer along the target or backing plate and temporarily fixing it.Place the spacer around the target or backing plate on the bonding surface side, and use the side force clamp. A temporary fixing method can be adopted. The production method of the present invention can be implemented by simply placing the spacer on the surface of the target or the backing plate on the side of the bonding surface.

 As to the thickness of the heat-resistant temporary spacer, as shown in FIG. 6, the thickness of the heat-resistant temporary spacer 7 on the target 1 and the thickness of the heat-resistant temporary spacer on the backing plate 2 8 is adjusted to be a substantially constant value within the range of 0.25 to 2 mm, but only one of the target 1 and the backing plate 2 is heat-resistant temporary. The sir may be detachably provided and adjusted so that its thickness is substantially constant within the range of 0.25 to 2 mm.

[0031] Further, a heat-resistant adhesive tape is used as the heat-resistant temporary spacers 7 and 8, the thickness of which is small and their thickness or their total thickness is a predetermined thickness in the range of 0.25 to 2 mm. If this does not occur, two or more heat-resistant adhesive tapes can be used. When heat-resistant adhesive tape is used, fluorine resin (for example, Teflon (registered trademark)) is used because it has a small coefficient of friction and is strong, and can be easily extracted after cooling and solidifying the bonding material. )) A heat-resistant adhesive tape consisting of a tape and a modified silicone-based adhesive applied to one surface of the tape, or a fluororesin layer, an inorganic fiber cloth layer on it, and a fluororesin layer on it It is preferable to use a heat-resistant pressure-sensitive adhesive tape comprising a modified silicone-based pressure-sensitive adhesive layer thereon.

 [0032] Then, the force at which the melt of the bonding material is formed on the surface of the bonding surface of the target is defined on the surface of the bonding surface of the backing plate. A melt of the bonding material is formed in a plane-symmetric arrangement, or a melt of the bonding material is formed on both. At this time, the total thickness of the bonding material melt is preferably slightly larger than the total thickness of the heat-resistant temporary spacer so that the target and the backing plate are completely bonded. Next, as shown in FIG. 6, the target and the backing plate are attached to each other. At this time, when the heat-resistant temporary spacer is detachably provided on both of the target and the backing plate, the target and the backing plate are attached. The plate and the plate are bonded via the bonding material layer so that the heat-resistant temporary spacer that is symmetrical with the plate will match.

 [0033] A method of forming a melt of the bonding material on the surface of the target, the surface of the backing plate, or both surfaces includes melting the surface of the target and the surface of the knocking plate with the bonding material. A method in which a bonding material is applied to the surface of the target, the surface of the backing plate, or both surfaces and melted, or the surface of the target, the surface of the backing plate, or the like. Alternatively, there is a method in which a bonding material is applied to both surfaces, and then heated and melted.

[0034] After the target and the backing plate are bonded together, if the heat-resistant temporary spacer is detachably provided on both of them, the target and the backing plate are plane-symmetrical. After bonding through the bonding material layer so that the heat-resistant temporary spacer matches, the bonding material is cooled and solidified. The method of cooling and solidifying the bonding material is not particularly limited. For example, a method of blowing cold air from the backing plate side or a method of pressing a copper ingot against the center of the back surface of the backing plate can be adopted. Also, when the target is a metal type that is resistant to thermal shock, etc. May be cooled by blowing cold air on the target side.

 After the bonding material solidifies by cooling, the heat-resistant temporary spacer is removed to obtain the sputtering target of the present invention. By removing the heat-resistant temporary spacer in this way

There is a heat-resistant temporary spacer, and the bonding material adheres to other parts.

When the heat-resistant temporary spacer is detachably provided around the entire surface around the surface to be bonded to the target, the area around the surface to be bonded to the target is There is no bonding material between the entire periphery and the backing plate, and the entire periphery around the surface to be bonded to the target also faces that part, and the surface of the backing plate at the part where the backing plate faces. Even if the bonding material adheres, the state becomes poor. When such a sputtering target is used, there is no danger of the bonding material jumping out during sputtering.

 [0036] In the sputtering target obtained by the production method of the present invention, both surfaces of the bonded portion of the target and the backing plate are kept substantially parallel. In addition, the discharge voltage variation between targets is small and uneven wear does not occur.

 [0037] The sputtering target of the present invention and a method for producing the same will be described below based on examples and comparative examples.

 Example 1

 The base material is a blue glass target with a size of 127 mm X 381 mm X 4.8 mm, an oxygen-free copper backing plate with a size of 150 mm X 440 mm x 6 mm, and a tetrafluoroethylene resin (Teflon (registered trademark)). Using a heat-resistant adhesive tape with a width of 3 mm and a thickness of about 0.13 mm coated with a modified silicone adhesive on one side, and indium powder as a bonding material, 7 o

[0038] A heat-resistant adhesive tape was removably provided on the above target and backing plate in the arrangement shown in Fig. 2. Thereafter, the target and the backing plate were heated to 190 ° C using a hot plate, and indium powder was applied to each bonding surface and melted to form a melt of the bonding material. Then, as shown in FIG. 6, the target and the backing plate are bonded in plane symmetry, and bonded so that the heat-resistant adhesive tape matches. The bonding was performed via a bonding material layer. After bonding, a 3 kg weight was placed on the target and allowed to cool naturally. When the temperature of the target reached about 100 ° C., the weight was removed and the heat-resistant adhesive tape was pulled out to obtain a sputtering target of the present invention. Similarly, a total of 10 sputtering targets were produced. The thickness of the bonding material layer of each sputtering target was almost constant at 0.25 mm.

Example 2

 Example 1 except that a heat-resistant adhesive tape with a width of 3 mm and a thickness of about 0.66 mm, which was made of a tetrafluoroethylene resin (Teflon (registered trademark)) as a base material and coated on one side with a modified silicone-based adhesive, was used. In the same manner as in 1, 10 sputtering targets were produced. The thickness of the bonding material layer of each sputtering target was 1.3 mm, which was almost constant.

[0040] Comparative Example 1

 127mm X 381mm X 4.8mm size blue plate glass target, 150mm X 440mm x 6mm size oxygen-free copper backing plate, 20mm X 381mm X 0.25mm size oxygen-free copper plate (spacer), 7 o using indium powder as bonding material

 [0041] The target and the backing plate were heated to 190 ° C using a hot plate, and indium powder was applied to each bonding surface and melted. Two of the above oxygen-free copper plates (spacers) were heated to 190 ° C, and indium powder was applied to all surfaces thereof, melted and wetted. These two oxygen-free copper plates were arranged in parallel on the backing plate at an interval of 65 mm on the indium molten film, and a target was bonded thereon. After bonding, a 3 kg weight was placed on the target and cooled naturally to obtain a sputtering target. Similarly, a total of 10 sputtering targets were produced. The thickness of the bonding material layer of each sputtering target was almost constant at 0.25 mm.

 Comparative Example 2

Comparative Example 1 except that a 20 mm X 381 mm X 1.3 mm oxygen-free copper plate (spacer 1) was used instead of the 20 mm X 381 mm X 0.25 mm oxygen-free copper plate (spacer 1) In the same manner as in the above, ten sputtering targets were produced. The thickness of the bonding material layer of each sputtering target was almost constant at 1.3 mm. Example 3

 127mm X 381mm X 4.8mm size blue plate glass target, 150mm X 440mm X 6mm size oxygen-free copper backing plate, 5mm width x 1.5mm thickness oxygen-free copper plate (spacer one) , And indium powder as a bonding material were prepared.

 The copper plate spacer was detachably arranged only on the target in the arrangement shown in FIG. Then, the target and the backing plate were heated to 190 ° C using a hot plate, and indium powder was applied to the bonding surface of the target and melted to form a melt of the bonding material. Next, the target and the backing plate were bonded together via a bonding material layer in an arrangement as shown in FIG. After bonding, a 3kg weight was placed on the target and allowed to cool naturally. When the temperature of the target reached about 100 ° C., the weight was removed and the copper plate spacer was pulled out and removed to obtain a sputtering target of the present invention. Similarly, a total of 10 sputtering targets were produced. The thickness of the bonding material layer of each sputtering target was almost constant at 1.5 mm.

 [0045] Comparative Example 3

 Ten sputtering targets were produced in the same manner as in Example 3, except that the copper plate spacer was left as it was without pulling force. The thickness of the bonding material layer of each sputtering target was almost constant at 1.5 mm.

Example 4

 127mm X 381mm X 4.8mm size blue plate glass target, 150mm X 440mm X 6mm size oxygen-free copper backing plate, SUS plate size 5mm width x length 21mm x thickness 2mm 7) Using indium powder as bonding material and 7 o

The arrangement shown in FIG. 3 (b) on the surface of the target is plane-symmetrical, and the above-mentioned SUS plate spacer can be detached from the backing plate surface to be bonded to the bonding material layer by a clamp. It was arranged in. Then, the target and the backing plate were heated to 190 ° C using a hot plate, and indium powder was applied to the bonding surface of the backing plate and melted to form a melt of the bonding material. Next, target and battery The target and the backing plate were bonded together via a bonding material layer such that the king plate was covered with the 9.5 mm long portion of each of the SUS plate spacers described above. After bonding, a 3kg weight was placed on the target and allowed to cool naturally. When the temperature of the target reached about 100 ° C., the weight was removed, and the SUS plate spacer was pulled out to obtain a sputtering target of the present invention. Similarly, a total of 10 sputtering targets were produced. The thickness of the bonding material layer of each sputtering target was almost constant at 2.0 mm.

[0048] Comparative Example 4

 Ten sputtering targets were produced in the same manner as in Example 4 except that the spacer made of the SUS plate was left without being pulled out. The thickness of the bonding material layer of each sputtering target was almost constant at 2.0 mm.

Example 5

 Example except that a copper wire (spacer) with a diameter of 0.5 mm and a length of 2 lmm was used instead of a SUS plate (spacer) with a size of 5 mm (width) x 21 mm (length) x 2 mm (thickness) In the same manner as in 4, 10 sputtering targets were produced. The thickness of the bonding material layer of each sputtering target was almost constant at 0.5 mm.

[0050] Comparative Example 5

 Ten sputtering targets were produced in the same manner as in Example 5 except that the copper wire (spacer 1) was not pulled out and was left as it was. The thickness of the bonding material layer of each sputtering target was almost constant at 0.5 mm.

Example 6

 Implemented except for using a SUS wire (spacer) with a diameter of 1. Omm x 2 lmm in place of a SUS plate (spacer) with a width of 5mm x length 21mm x thickness 2mm In the same manner as in Example 4, ten sputtering targets were produced. The thickness of the bonding material layer of each sputtering target was almost constant at 1. Omm.

Comparative Example 6

Ten sputtering targets were produced in the same manner as in Example 6, except that the SUS wire (spacer 1) was not pulled out and was left as it was. Each sputtering target The thickness of the bonding material layer was approximately constant at 1. Omm.

Comparative Example 7

 Comparative example except that instead of a SUS plate (spacer) of 5mm width x 21mm length x 2mm thickness, a copper wire (spacer) with a diameter of 0.1mm and length 2lmm was used instead of a SUS plate (spacer) A sputtering target was produced in the same manner as in 4. The thickness of the bonding material layer of each sputtering target was almost constant at 0.1 mm. However, since the copper wire (spacer) was too thin, it could not be completely removed even if it was pulled out.

 Comparative Example 8

 Comparative example except that instead of a SUS plate (spacer) of 5mm width x 21mm length x 2mm thickness, a copper wire (spacer) with a diameter of 2.5mm x length 2lmm was used instead of a SUS plate (spacer) In the same manner as in 4, the production of a sputtering target was attempted. However, when the target and the backing plate were bonded via the bonding material layer, leakage of the bonding material mp occurred.

[0055] Withstand pressure test

 The pressure resistance of each of the sputtering targets produced in Examples 1 to 6 and Comparative Examples 1 to 6 was evaluated by the following method.

 As shown in FIG. 7, the backing plate 2 of the sputtering target was fixed to the jig 9 with screws (shown in FIG. 7) so that an equal pressure was applied to the entire back surface of the knocking plate. Nitrogen gas was gradually introduced into the space 10 to measure the pressure at which a crack occurred. The results are shown in Table 1.

[0056] As is clear from the data shown in Table 1, the sputtering target of the present invention obtained by the production method of the present invention is superior to the sputtering target containing a spacer.

[0057] [Table 1] Table 1

腳 J4 1：翻 5 ¾i例 5 翻 6 »ί6 ボ 、インク 1: 瞧 1 1: translation 2

腳 J4 1: Ver. 5 ¾ Example 5 Ver. 6 »ί6

1 $ ^ (mm) 0.25 1.3 1, 3 1.1.5.1.5 2.0 2.0 0.0.5 0.5.1.0 1.1.0 Sue Yes Yes Yes Yes f Yes Yes Acknowledgment 1 5. 9 6. 3 6. 0 7. 4 6. 1 6. 5 7. 6 9. 9 4. 5 5. 3 5. 2 6. 7

3.5 5.8 5.7 6.8 δ.8 8.1 6.9 8.5 3.9 6.6 6.8 7.5 5.49.9 6.8 7,8 6.5 7.2 8.1 9.7 5.1 7.26.0 8.3 u 4.3 5.4 5,7 6.8 6.9 5.6 7.6 8.26 4 5.9 5. 6 6.2

(kg / cm ² ) 5 4.5.6.0 6,7 7.1 5.5 9.1 6.8 7.5 4.9 6.1 6.2 7.7 Return 6 3.15. 3 6.4 6, 9 6.4 8.1 8.2 6.9 5.2 7.3 7, 1 7.4 Cor 7 5.3 6.4 6.8 7.4 5.9 7. 7 7, 1 9. 2 6. 2 5. 0 4. 7 8.0 0 8 7. 7 5. 2 5, 9 6. 9 6. 4 7. 5 7. 3 8. 3 4. 8 6. 0 5. 1 6.6 Thank you 9 6. 1 6. 0 6. 6 7. 8 6. 3 7. 9 6. 9 7. 8 5. 1 7. 4 6. 47. 4.2 5.5 5, 9 8. 0 7. 4 8. 6 7. 6 8. 2 6. 3 5. 8 5. 4 6.0 Average 4. 5 5. 7 6. 3 7. 3 6.3 7.6 7.4 8.4 5.2 6.3 5.97 7,2

Claims

The scope of the claims  [1] Consists of a target, a knocking plate, and a bonding material layer that bonds them together. There is no spacer in the bonding material layer, and the bonding material layer has a thickness of 0.25 to 2 mm. A sputtering target, wherein the sputtering target is within a range and the bonding surface of the target and the bonding surface of the backing plate are kept substantially parallel.  [2] Consists of a target, a knocking plate, and a bonding material layer that bonds them together. There is no spacer in the bonding material layer, and the thickness of the bonding material layer is 0.25 to 2 mm. Within the range, the bonding surface of the target and the bonding surface of the backing plate are kept substantially parallel, and between the backing plate and at least a part of the periphery of the bonding surface of the target. A sputtering target characterized in that no bonding material is present. [3] The heat-resistant temporary spacer is arranged in such a manner that the target surface bonded to the bonding material layer and the knocking plate surface bonded to the bonding material layer can be kept substantially parallel (1). ) Either dispose it around the surface to be bonded to the target so that it can be detached, or (2) arrange the backing plate in a plane-symmetrical arrangement with the heat-resistant temporary spacer on the target surface. (3) Removably installed on both of them, with the total thickness of the heat-resistant temporary spacer in the range of 0.25 to 2 mm And a force for forming a molten material of the bonding material on the bonding surface side of the target. The surface of the target is formed on the bonding surface side of the backing plate. Top bonding material The bonding material is formed at a force that forms the bonding material melt in an arrangement that is plane-symmetric with the melt forming position, or a bonding material melt is formed at both, and then the target and the backing plate are connected to each other. When the heat-resistant temporary spacer is detachably attached to both of them at this time, the target and the backing plate are plane-symmetric with each other. A method for manufacturing a sputtering target, characterized in that the heat-resistant temporary spacers are bonded together via a bonding material layer so as to match, and after cooling, those heat-resistant temporary spacers are removed. [4] A heat-resistant temporary spacer is (1) a force for detachably disposing it around the entire periphery of the target surface to be bonded to the bonding material layer; (2) A heat-resistant temporary spacer on the target surface. The surface is symmetrical with the position where it can be placed, and it is placed on the surface of the knocking plate attached to the bonding material layer so that it can be detached, or (3) it is detachably placed on both. At this time, the total thickness of the heat-resistant temporary spacer is adjusted to be substantially constant within the range of 0.25 to 2 mm, and is adjusted on the surface of the target, the surface of the backing plate, or A melt of a bonding material is formed in a portion surrounded by a heat-resistant temporary spacer on both surfaces, and then the target and the backing plate are bonded together via the bonding material layer. In this case, heat-resistant temporary When the substrate is detachably provided, the target and the backing plate are bonded via a bonding material layer so that the heat-resistant temporary spacer that is symmetrical to the plane is aligned. And removing the heat-resistant temporary spacer after cooling.  [5] heating the surfaces of the target and the backing plate bonded to each other via the bonding material layer to a temperature sufficient to melt the bonding material; Claims to form a melt of the bonding material on the surface of the target, on the surface of the backing plate, or on both surfaces by applying and melting the bonding material on the surface, or both surfaces, respectively. Item 3. The method for producing a sputtering target according to Item 3 or 4.  [6] A bonding material is applied to the surface of the above-mentioned target, the surface of the above-mentioned backing plate, or both, respectively, and then heated, so that the surface of the above-mentioned target, the surface of this backing plate, or both of them is heated. 5. The method for producing a sputtering target according to claim 3, wherein a melt of the bonding material is formed on the surface of the sputtering target.  [7] A heat-resistant temporary spacer made of a fluororesin tape and a modified silicone-based adhesive applied to one side thereof, or a layer of a fluororesin and a layer of an inorganic fiber cloth thereon And a fluorine resin layer thereon and a modified silicone adhesive layer thereon, wherein the bonding material is a bonding material containing indium as a main component. Method for manufacturing a sputtering target.