[go: up one dir, main page]

WO2005110057A3 - Crystallographic alignment of high-density nanowire arrays - Google Patents

Crystallographic alignment of high-density nanowire arrays Download PDF

Info

Publication number
WO2005110057A3
WO2005110057A3 PCT/US2005/000568 US2005000568W WO2005110057A3 WO 2005110057 A3 WO2005110057 A3 WO 2005110057A3 US 2005000568 W US2005000568 W US 2005000568W WO 2005110057 A3 WO2005110057 A3 WO 2005110057A3
Authority
WO
WIPO (PCT)
Prior art keywords
nanowires
nanowire arrays
substrate
growth
crystallographic
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/US2005/000568
Other languages
French (fr)
Other versions
WO2005110057A2 (en
Inventor
Peidong Yang
Tevye Kuykendal
Peter Pauzauskie
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
University of California Berkeley
University of California San Diego UCSD
Original Assignee
University of California Berkeley
University of California San Diego UCSD
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by University of California Berkeley, University of California San Diego UCSD filed Critical University of California Berkeley
Publication of WO2005110057A2 publication Critical patent/WO2005110057A2/en
Publication of WO2005110057A3 publication Critical patent/WO2005110057A3/en
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • H10P14/3466—
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
    • H10P14/274—
    • H10P14/279—
    • H10P14/2921—
    • H10P14/3402—
    • H10P14/3416—
    • H10P14/3426—
    • H10P14/3462—

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Nanotechnology (AREA)
  • Physics & Mathematics (AREA)
  • Composite Materials (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Materials Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

A method for controlling the crystallographic growth direction and geometric and physical characteristics of nanowires using a metal-organic chemical vapor deposition and substrate selection. As an illustration of the method, epitaxial growth of wurtzite gallium nitride on (100) y -LiAIO2 and (111) MgO single crystal substrates resulted in the selective growth of nanowires in the orthogonal [110] and [001] directions, respectively. Triangular and hexagonal cross sections were observed as a result of substrate-induced constraints of lattice parameter matching and symmetry registry. These nanowire arrays exhibit a systematic difference in their temperature­ dependent band-edge emission resulting from the different size, shape, and anisotropic polarity of the nanostructures. Scaling of the synthetic process is entirely compatible with existing GaN thin-film technology and should enable the realization of a new generation of GaN nanowire devices and systems.
PCT/US2005/000568 2004-01-06 2005-01-06 Crystallographic alignment of high-density nanowire arrays Ceased WO2005110057A2 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US53475904P 2004-01-06 2004-01-06
US60/534,759 2004-01-06

Publications (2)

Publication Number Publication Date
WO2005110057A2 WO2005110057A2 (en) 2005-11-24
WO2005110057A3 true WO2005110057A3 (en) 2006-04-27

Family

ID=35394616

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2005/000568 Ceased WO2005110057A2 (en) 2004-01-06 2005-01-06 Crystallographic alignment of high-density nanowire arrays

Country Status (1)

Country Link
WO (1) WO2005110057A2 (en)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7407872B2 (en) * 2004-08-20 2008-08-05 Yale University Epitaxial growth of aligned AlGalnN nanowires by metal-organic chemical vapor deposition
CN103572312B (en) * 2012-08-07 2017-02-08 中国科学院大连化学物理研究所 Method for preparing self-sustained silicon nanowire array
CN112563881B (en) * 2020-11-27 2022-02-11 东南大学 Plasmon laser based on ZnO/Al core-shell nanowires and preparation method thereof

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5831277A (en) * 1997-03-19 1998-11-03 Northwestern University III-nitride superlattice structures
US20020130311A1 (en) * 2000-08-22 2002-09-19 Lieber Charles M. Doped elongated semiconductors, growing such semiconductors, devices including such semiconductors and fabricating such devices
US20020175408A1 (en) * 2001-03-30 2002-11-28 The Regents Of The University Of California Methods of fabricating nanostructures and nanowires and devices fabricated therefrom
KR20030060619A (en) * 2002-01-10 2003-07-16 학교법인 포항공과대학교 A process for preparing a zinc oxide nanowire by metal organic chemical vapor deposition and a nanowire prepared therefrom

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5831277A (en) * 1997-03-19 1998-11-03 Northwestern University III-nitride superlattice structures
US20020130311A1 (en) * 2000-08-22 2002-09-19 Lieber Charles M. Doped elongated semiconductors, growing such semiconductors, devices including such semiconductors and fabricating such devices
US20020175408A1 (en) * 2001-03-30 2002-11-28 The Regents Of The University Of California Methods of fabricating nanostructures and nanowires and devices fabricated therefrom
KR20030060619A (en) * 2002-01-10 2003-07-16 학교법인 포항공과대학교 A process for preparing a zinc oxide nanowire by metal organic chemical vapor deposition and a nanowire prepared therefrom

Also Published As

Publication number Publication date
WO2005110057A2 (en) 2005-11-24

Similar Documents

Publication Publication Date Title
US9362113B2 (en) Engineered substrates for semiconductor epitaxy and methods of fabricating the same
CN103477418B (en) Nanowire epitaxy on graphite substrate
Bertness et al. Spontaneously grown GaN and AlGaN nanowires
US10435812B2 (en) Heterogeneous material integration through guided lateral growth
US20040224484A1 (en) Methods of growing nitride-based film using varying pulses
GR1008013B (en) Method for heteroepitaxial growth of iii metal-face polarity iii-nitrides on diamond substrates
WO2006110163A3 (en) Epitaxial growth of aligned algainn nanowires by metal-organic chemical vapor deposition
WO2007133271A3 (en) Methods for oriented growth of nanowires on patterned substrates
WO2009035095A1 (en) EPITAXIAL SiC SINGLE CRYSTAL SUBSTRATE AND METHOD FOR MANUFACTURING EPITAXIAL SiC SINGLE CRYSTAL SUBSTRATE
TW200620423A (en) Semiconductor substrate and semiconductor device manufactured by epitaxial growth on the semiconductor substrate
JP2005298319A5 (en)
WO2007098215A8 (en) Method for growth of semipolar (al,in,ga,b)n optoelectronic devices
JP2011524322A5 (en)
KR20180095608A (en) Fabrication method of composite GaN nanocolumn and light emitting structure fabricated by the method
Ikejiri et al. GaAs nanowire growth on polycrystalline silicon thin films using selective-area MOVPE
Hong et al. Position‐Controlled Selective Growth of ZnO Nanorods on Si Substrates Using Facet‐Controlled GaN Micropatterns
KR102068322B1 (en) Epitaxy structure using graphene sacrificial layer and method for manufacturing the same
Yu et al. Low-temperature and global epitaxy of GaN on amorphous glass substrates by molecular beam epitaxy via a compound buffer layer
WO2005110057A3 (en) Crystallographic alignment of high-density nanowire arrays
CN106910675A (en) A composite substrate for preparing nitride electronic devices and its preparation method
TW200603445A (en) Gallium nitride-based semiconductor stacked structure, production method thereof, and compound semiconductor and light-emitting device each using the stacked structure
TW200631079A (en) Growth process of a crystalline gallium nitride based compound and semiconductor device including gallium nitride based compound
JP5146697B2 (en) Nitride semiconductor
CN117727840A (en) Nanocolumn Micro LED and preparation method thereof
Breuer et al. Nucleation and growth of Au-assisted GaAs nanowires on GaAs (1 1 1) B and Si (1 1 1) in comparison

Legal Events

Date Code Title Description
AK Designated states

Kind code of ref document: A2

Designated state(s): AE AG AL AM AT AU AZ BA BB BG BR BW BY BZ CA CH CN CO CR CU CZ DE DK DM DZ EC EE EG ES FI GB GD GE GH GM HR HU ID IL IN IS JP KE KG KP KR KZ LC LK LR LS LT LU LV MA MD MG MK MN MW MX MZ NA NI NO NZ OM PG PH PL PT RO RU SC SD SE SG SK SL SM SY TJ TM TN TR TT TZ UA UG US UZ VC VN YU ZA ZM ZW

AL Designated countries for regional patents

Kind code of ref document: A2

Designated state(s): BW GH GM KE LS MW MZ NA SD SL SZ TZ UG ZM ZW AM AZ BY KG KZ MD RU TJ TM AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HU IE IS IT LT LU MC NL PL PT RO SE SI SK TR BF BJ CF CG CI CM GA GN GQ GW ML MR NE SN TD TG

NENP Non-entry into the national phase

Ref country code: DE

WWW Wipo information: withdrawn in national office

Country of ref document: DE

122 Ep: pct application non-entry in european phase