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WO2005088733A1 - Cellule solaire multicouche - Google Patents

Cellule solaire multicouche Download PDF

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Publication number
WO2005088733A1
WO2005088733A1 PCT/JP2004/003360 JP2004003360W WO2005088733A1 WO 2005088733 A1 WO2005088733 A1 WO 2005088733A1 JP 2004003360 W JP2004003360 W JP 2004003360W WO 2005088733 A1 WO2005088733 A1 WO 2005088733A1
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WO
WIPO (PCT)
Prior art keywords
solar cell
module
modules
stacked
cell group
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2004/003360
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English (en)
Japanese (ja)
Inventor
Josuke Nakata
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Kyosemi Corp
Original Assignee
Kyosemi Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to EP13152752.5A priority Critical patent/EP2587552A1/fr
Priority to CNB2004800339848A priority patent/CN100561755C/zh
Priority to US10/588,668 priority patent/US8237045B2/en
Priority to CA2555439A priority patent/CA2555439C/fr
Priority to AU2004317236A priority patent/AU2004317236B2/en
Priority to EP04720197.5A priority patent/EP1724841B1/fr
Priority to PCT/JP2004/003360 priority patent/WO2005088733A1/fr
Priority to HK07102121.1A priority patent/HK1094915B/xx
Application filed by Kyosemi Corp filed Critical Kyosemi Corp
Priority to ES04720197.5T priority patent/ES2616177T3/es
Priority to JP2006510853A priority patent/JP4180636B2/ja
Priority to TW093108658A priority patent/TWI234292B/zh
Publication of WO2005088733A1 publication Critical patent/WO2005088733A1/fr
Anticipated expiration legal-status Critical
Priority to US13/453,429 priority patent/US9159856B2/en
Ceased legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/14—Shape of semiconductor bodies; Shapes, relative sizes or dispositions of semiconductor regions within semiconductor bodies
    • H10F77/147—Shapes of bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F19/00—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F19/00—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules
    • H10F19/40—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules comprising photovoltaic cells in a mechanically stacked configuration
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F19/00—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules
    • H10F19/90—Structures for connecting between photovoltaic cells, e.g. interconnections or insulating spacers
    • H10F19/902—Structures for connecting between photovoltaic cells, e.g. interconnections or insulating spacers for series or parallel connection of photovoltaic cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/40—Optical elements or arrangements
    • H10F77/42—Optical elements or arrangements directly associated or integrated with photovoltaic cells, e.g. light-reflecting means or light-concentrating means
    • H10F77/488—Reflecting light-concentrating means, e.g. parabolic mirrors or concentrators using total internal reflection
    • H10W90/726—
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/52—PV systems with concentrators

Definitions

  • the present invention relates to a stacked solar cell in which two or more types of solar cell modules having different sensitivity wavelength bands are stacked in order to effectively utilize a wide range of wavelength components of a solar spectrum, and
  • the present invention relates to a stacked solar cell that incorporates a cell group module that incorporates a plurality of spherical zora cells as a type of Taimeiyo battery module.
  • the spectrum of sunlight has a broad wavelength range from ultraviolet to far-infrared with a peak near 600 nm on the ground.
  • a solar cell that relies on a single energy band has a limited spectrum range that can be used.
  • the solar spectrum is divided into multiple sensitivity wavelength bands, and multiple types of solar cell modules (or element solar cells or solar cell layers) that can efficiently perform photoelectric conversion for each sensitivity wavelength band are created.
  • a solar cell has been proposed in which they are stacked in order from the sunlight incident side to the center wavelength of the sensitivity wavelength band that is shorter (the band gap is larger), and a wide range of the solar spectrum is absorbed and photoelectrically converted.
  • the element solar cell constituting the stacked solar cell has a pn junction formed in a planar semiconductor wafer or semiconductor layer.
  • the performance is reduced due to the optical loss of the filter / mirror and the cost is high.
  • the space between a plurality of element solar cells is large, and labor is required for positioning and fixing them. It costs. ⁇
  • the types of semiconductors that can be grown on a single substrate are limited by differences in crystal structure and lattice constant, and it is difficult to form a desired type of pn junction having a different band gap.
  • a tunnel junction is required to allow current to flow between the stacked solar cell layers, but the resistance of the tunnel junction is high.
  • the magnitudes of the photocurrents of the plurality of stacked solar cell layers are not uniform, there is a problem that the output current of the entire solar cell is limited by the lowest solar cell layer.
  • the solar cell of (c) does not have the restrictions on crystal growth unlike the solar cell of (b), but the element solar cell on the sunlight incident side has light in a wavelength band not absorbed by this element solar cell. You need a window through it.
  • Increasing the number of stacked element solar cells divided by the light receiving area has the disadvantage that the effective light receiving area tends to decrease due to an increase in the area of the comb-shaped electrode portion and the misalignment between the element solar cells.
  • the element solar cells consisting of a single pn junction are stacked, so the output current of each element solar cell is not uniform and the output of the entire solar cell is output. The problem remains that it is limited by low current element solar cells.
  • An object of the present invention is to provide a stacked solar cell capable of resolving the above-mentioned problems and significantly improving the efficiency of photoelectric conversion of sunlight. Disclosure of the invention
  • the stacked solar cell according to the present invention is a stacked solar cell in which a plurality of types of solar cell modules are incorporated and integrally stacked, wherein a plurality of types of solar cell modules having different sensitivity wavelength bands are provided.
  • a module having a shorter wavelength has a plurality of types of solar cell modules stacked so as to be located on the incident side of sunlight, and at least one type of solar cell module has a plurality of substantially spherical cells arranged in a plurality of rows and a plurality of columns.
  • the solar cell is characterized by comprising a cell group module. Since there are multiple types of solar cell modules having different sensitivity wavelength bands, power can be generated using sunlight in a wide wavelength range in the solar spectrum. Since light with shorter wavelengths has lower transmittance, the solar cell modules with shorter center wavelengths in the sensitivity wavelength band are stacked on the incident side of sunlight as described above, so that the photoelectric conversion of each solar cell module is performed. Efficiency can be increased.
  • the output current can be easily changed by changing the number of series and parallel connections in a circuit that connects a plurality of solar cells in series and parallel. Therefore, by changing the output current of at least one cell group module, the output currents of a plurality of types of solar cell modules can be easily aligned, which is advantageous in increasing the photoelectric conversion efficiency of the solar cell.
  • the solar cells in the cell group module have a nearly spherical pn junction, the arrangement of multiple solar cells is denser, increasing the total area of the pn junctions in the cell group module and increasing the photoelectric conversion efficiency It is possible.
  • each solar cell of the cell group module has a substantially spherical pn junction, there is an opportunity for incident light incident on each solar cell to encounter the pn junction twice, which is advantageous in improving photoelectric conversion efficiency. It is.
  • each solar cell can be configured to have an optical confinement effect, it is advantageous in increasing photoelectric conversion efficiency.
  • the light reflected by the spherical surface can change the optical path and enter another zora cell, thereby improving the light absorption as a whole.
  • the solar cells in each cell group module form a pn junction of another solar cell module. It can be manufactured independently without being affected by the lattice constant of the semiconductor to be formed.
  • the following configuration may be appropriately adopted.
  • each of the three types of solar cell modules is composed of a cell group module having a plurality of substantially spherical zora cells arranged in a plurality of rows and a plurality of columns.
  • the battery module is composed of a planar light receiving module having a common planar pn junction.
  • the solar cells arranged in a plurality of rows and columns in the three-cell group module described above are electrically connected to each other via lead wires extending in the row direction or the column direction and led out to the outside.
  • Each of the cell group modules has two layers of a plurality of spherical zora cells arranged in a plurality of rows and a plurality of columns on a plane, and these two layers of solar cells are arranged in a plane viewed from the incident direction of sunlight. They were arranged so that they approached each other without overlapping.
  • the flat light receiving module is disposed in the lowermost layer so as to be located below the plurality of cell group modules, and a reflecting member capable of reflecting sunlight is provided below or below the flat light receiving module.
  • a plurality of zora cells are housed in a transparent glass or synthetic resin material in an embedded manner.
  • a transparent member made of transparent glass or synthetic resin is fixed on the upper surface of the solar cell module which is the most incident side in the sunlight incident direction.
  • the planar light receiving module is disposed in a lowermost layer below a plurality of cell group modules, and the three types of cell group modules are first to third cell group modules stacked in order from the sunlight incident side.
  • the first cell group module has a plurality of solar cells each having a substantially spherical pn junction formed on the surface of a substantially spherical GaP single crystal, and the second cell group module has a substantially spherical GaA.
  • the third cell group module has a plurality of solar cells with a nearly spherical pn junction formed on the surface layer of the s single crystal. Of solar cells.
  • the planar light receiving module described in 11) has a planar common pn junction formed in an InGaAs semiconductor layer formed on an n-type InP semiconductor substrate.
  • the first cell group module has a plurality of solar cell photocells in which a substantially spherical pn junction is formed on the surface of a substantially spherical GaAs single crystal, and the second cell group module has a substantially spherical shape.
  • the third cell group module has a substantially spherical pn junction on the substantially spherical Ge single crystal surface layer, which has a plurality of solar cells with a substantially spherical pn junction formed on the surface layer of the Si single crystal. Having a plurality of zora cells.
  • the planar light receiving module described in 13) has a planar common pn junction formed in a GaAsP semiconductor layer formed on an n-type GaP semiconductor substrate.
  • FIGS. 1 (a) to 1 (g) are cross-sectional views of an Si single crystal and the like in a plurality of steps for manufacturing a spherical Si solar cell.
  • FIG. 2 is a cross-sectional view of a spherical Ge Zola cell.
  • FIG. 3 is a cross-sectional view of a G aP single crystal and the like in a plurality of steps of manufacturing a G a P solar cell.
  • FIG. 4 is a cross-sectional view of a GaAs single crystal or the like in a plurality of steps of manufacturing a GaAlAs / GaAs solar cell.
  • FIG. 5 is a plan view of the Si cell group module.
  • FIG. 6 is a sectional view taken along line VI-VI of FIG.
  • FIG. 7 is a sectional view taken along the line VII-VII in FIG.
  • FIG. 8 is a plan view of the InGaAs./I ⁇ planar light receiving module.
  • FIG. 9 is a cross-sectional view taken along line ⁇ - ⁇ of FIG.
  • FIG. 10 is a plan view of a GaAs PZGaP planar light receiving module.
  • Figure 11 is a diagram
  • FIG. 10 is a sectional view taken along line XI-XI of FIG.
  • FIG. 12 is a plan view of the stacked solar cell of the first example.
  • FIG. 13 is a cross-sectional view of the stacked solar cell of FIG.
  • FIG. 14 is a diagram showing the relative energy density of sunlight and the relative spectral sensitivity of solar cells and the like incorporated in the solar cell of the first example.
  • FIG. 15 is an explanatory diagram illustrating incidence, reflection, absorption, and the like in the solar cell of the first example.
  • FIG. 16 is a schematic circuit diagram of a series-parallel connection circuit and a series connection circuit in the solar cell of the first example.
  • FIG. 17 is a cross-sectional view of the solar cell of the second example.
  • FIG. 18 is a cross-sectional view of the solar cell of the second example.
  • FIG. 19 is a diagram showing the relative energy density of sunlight and the relative spectral sensitivity of a solar cell or the like incorporated in the solar cell of the second example.
  • FIG. 20 is a perspective view of a stacked solar cell according to another embodiment.
  • FIG. 21 is a cross-sectional view of the solar cell of FIG.
  • this solar cell spherical light receiving type cell
  • a spherical semiconductor crystal is manufactured, and a substantially spherical pn junction is formed on the surface layer of the semiconductor crystal.
  • Positive and negative electrodes are provided at the surface positions to be connected, and these positive and negative electrodes are connected to both poles of the pn junction.
  • a spherical semiconductor crystal close to the size of the solar cell in order to reduce the loss of semiconductor material.
  • the method proposed by the present inventor in Japanese Patent No. 3231244 can be applied. That is, a liquid drop of a semiconductor in a molten state is freely dropped from the upper part of a drop tube, and a spheroidized drop is supercooled in the middle of the fall, and is stimulated from outside to solidify to form a spherical or granular single crystal.
  • a compound semiconductor containing an element having a high vapor pressure is employed, for example, the method proposed by the present inventor in Japanese Patent No. 3287579 can be applied.
  • a compound semiconductor material and its constituent elements, which have a high vapor pressure are placed in a sealed ampoule together with an atmospheric gas, and this is dropped from the upper part of the drop tube to allow the molten semiconductor material to fall freely.
  • a spherical or granular single crystal is produced.
  • a spherical single crystal can be produced by cutting a cube close to the volume of Zoracell from a large single crystal and processing the cube into a true sphere by mechanical and chemical means.
  • spherical single crystals are used to make spherical or nearly spherical zora cells, and a large number of solar cells are used to manufacture solar cell modules (cell group modules) having a specific sensitivity wavelength band to solar light.
  • the spectrum-divided solar cell (stacked solar cell) of the present application is a combination of two or more types of solar cell modules having different sensitivity wavelength bands and is combined. If necessary, a planar pn junction light-receiving module is used. (Planar light receiving module May be combined to form a composite.
  • FIG. 1 (a) to (g) show Si Zora cells to be incorporated into a solar cell module that has a sensitivity wavelength band in the middle wavelength range (approximately 500 to 100 nm) of the sunlight spectrum.
  • a manufacturing process in the case of manufacturing a substantially spherical Si solar cell 10 mainly made of silicon (Si) single crystal 11 will be described.
  • Si is an indirect-transition semiconductor with an energy band gap of 1.12 eV.
  • a certain amount of Si droplets are allowed to fall freely from the top of the drop tube through which the inert gas has flowed, and the surface tension is applied during the fall. From the supercooled state during the fall, a single point of the droplet is subjected to a physical stimulus such as contact and rapidly solidified to form a p-type silicon single crystal 11 with a diameter of about 1.2.
  • the protruding portion of the p-type silicon single crystal 11 is formed at the final stage of solidification. This protruding portion is cut into a plane as shown in FIG.
  • the reference surface 12 is a flat surface having a diameter of about 0.3 mm.
  • the reference plane 12 is used for positioning in subsequent steps such as impurity diffusion, electrode formation, output characteristic measurement, and wiring in subsequent steps.
  • a silicon oxide film 13 is formed on the entire surface.
  • the silicon oxide film 13 is left as a diffusion mask near the reference surface 12 and the periphery thereof, and the other silicon oxide film 13 is removed.
  • FIG. 1 (e) the silicon single crystal 11 of FIG.
  • Figure 2 shows the sensitivity of the long-wavelength region (about 800 to 1600 nm) in the solar spectrum.
  • a diffusion layer 34 made of p-type GaP by diffusing a p-type impurity such as zinc (Zn) and a boundary between the diffusion layer 34 and the n-type GaP single crystal 31 are formed.
  • a substantially spherical pn junction 35 is formed.
  • the silicon nitride film 33 used as the diffusion mask is completely removed.
  • an antireflection film 36 made of a thin silicon oxide film is formed on the entire surface.
  • Figures 4 (a) to 4 (d) show GaAs solar cells to be incorporated into a solar cell module with a sensitivity wavelength band in the short wavelength region (about 500 to 850nm) of the solar spectrum.
  • a manufacturing process for manufacturing a substantially spherical GaA1As / GaAs zora cell 40 mainly made of a substantially spherical gallium arsenide (GaAs) single crystal will be described.
  • GaAs gallium arsenide
  • GaAs is a direct transition semiconductor with an energy band gap of 1.43 eV, and has an energy band gap between Si and Ga P described above.
  • a substantially spherical n-type Ga As single crystal 41 having a diameter of about 1.2 mm is manufactured.
  • the GaAs single crystal 41 can be formed into a spherical shape using a mechanical and chemical technique like the GaP single crystal 31 described above.
  • it can be manufactured by the method proposed by the present inventor in Japanese Patent No. 3287579. Smell this way The n-type GaAs raw material and a small amount of As are vacuum-sealed in a quartz ampoule, and the GaAs raw material inside is cooled and solidified by free fall while heating and melting from the outside.
  • a p-type Ga0.2A10.8As layer 49 is epitaxially grown. During the crystal growth of Ga0.2A10.8As, zinc diffuses to the n-type GaAs single crystal 41 side to form a p-type GaAs layer 44, and the surface of the GaAs layer 44 A pn junction 45 is formed.
  • FIG. 4 (c) after forming an antireflection film 46 made of a silicon oxide film on the surface, the protrusions on the surface of the n-type GaAs single crystal 41 are cut horizontally, A reference surface 42 having a diameter of about 0.3 mm is formed. Next, as shown in FIG.
  • a paste mainly containing gold and zinc and germanium as dopants is applied in a dot shape to a central portion of the surface facing the crystal 41, and is heated at a high temperature for a short time.
  • a metal such as gold penetrates the thin silicon oxide film 46 (anti-reflection film), and the positive electrode 47 and the negative electrode 47 are in ohmic contact with the p-type GaAlAs layer 49 and the n-type GaAs single crystal 41, respectively. 48 are formed.
  • the pn junction 45 in the GaA 1 As layer 49 or change the composition ratio of the GaA 1 As layer 49 to change the energy band gap. With this, the sensitivity wavelength band can be shifted to the shorter wavelength side. Further, without providing the GaA 1 As layer 49, a homojunction pn junction may be formed by diffusing impurities into the spherical n-type GaAs single crystal 41.
  • Si cell group module 70 The structure and manufacturing method of the Si cell group module 70 will be described with reference to FIGS. First, a Si solar cell array 71 in which 10 zora cells 10 are connected in parallel at equal pitches between a pair of lead wires (a copper wire having a diameter of about 0.1 mm and silver plated) is provided. To manufacture.
  • the positive electrode lead wire 73 is soldered to the positive electrode 18 of the solar cell 10
  • the negative electrode lead wire 74 is soldered to the negative electrode 19 of the solar cell, respectively, to manufacture 10 solar cell arrays 71.
  • Five arrays 71 are arranged in the upper layer in parallel at equal intervals
  • five arrays 71 are arranged in the lower layer in parallel at equal intervals
  • the lower array 71 is positioned between the upper arrays 71.
  • the upper and lower zora cells 10 are arranged so as not to overlap in plan view, and the whole is molded with a transparent synthetic resin 75 (for example, a flexible silicone resin).
  • the upper and lower zora cells 10 are close to each other without overlapping in side view.
  • the actual Si cell group module 70 in which a large number of zora cells 10 are assembled in a matrix with a plurality of rows and a plurality of columns is a thin and flexible panel-like structure. However, a module having no flexibility may be configured.
  • a transparent glass sheet 76 (about 0.2 band thickness) is adhered to the lower surface of the synthetic resin 75.
  • the transparent glass sheet 76 retains the mechanical strength of the Si solar cell module 70 and is used as a reference plane for joining with another solar cell module.
  • Both ends of the positive electrode lead 73 and the negative electrode lead 74 after resin molding are connected to the outside of the transparent synthetic resin 75 for electrical connection with other solar cell arrays and other solar cell modules. It has been extended.
  • Series-parallel connection circuit 75 that connects 100 Si solar cells 10 in series using 10 positive electrode leads 73 and 10 negative electrode leads 74 (see Fig. 16) The series-parallel connection circuit 75 will be described later with reference to FIG.
  • a cell group module 80 (a solar cell module) (see FIG.
  • the cell group module 90 (solar cell module) (see FIG. 13) can be manufactured by incorporating the G a P zora cell 30 in place of the Si zora cell 10.
  • the cell group module 100 (solar cell module) (see FIGS. 13 and 17) can be manufactured.
  • the series-parallel connection circuit in these modules 80, 90, and 100 is the same as the series-parallel connection circuit 75 in the Si cell group module 70, and these will be described later.
  • the inventor of the present application has already disclosed such a solar cell module incorporating a plurality of spherical solar cells in International Publication WO 2004/001858 and the like.
  • FIGs. 8 and 9 show a solar cell module to be incorporated in the stacked solar cell of the present application, which has a sensitivity wavelength band in the long wavelength region (about 900 to 1700 nm) of sunlight.
  • An InGaAS / InP planar light receiving module 60 as an example of a solar cell module (element module) is shown.
  • an n-type InP having a larger energy band gap is epitaxially grown on the InGaAs layer 64, and a p-type impurity is diffused from the surface thereof to diffuse the InGaAs layer 64.
  • a pn junction may be formed inside.
  • the cold mirror film 66 is formed of a dielectric multilayer film set so as to reflect light having a wavelength of about 10 nm or less and transmit light having a wavelength of about 10 nm or less.
  • the dielectric multilayer film is made by alternately laminating a high-refractive-index dielectric film (such as Ti02 or Ta205) and a low-refractive-index dielectric film (Si02). The number is set in consideration of the wavelength to be reflected and the reflectance.
  • a negative electrode 68 (a small amount of germanium or gold containing an etchant) is provided on the entire lower surface of the n-type InP substrate 61 so as to make ohmic contact with it.
  • a striped positive electrode 67 (gold containing a small amount of zinc) is provided in ohmic contact.
  • the flat light receiving module 60 can be manufactured based on a known technique for manufacturing a long wavelength photodiode using InGaAs / InP.
  • a positive electrode lead 67a and a negative electrode lead 68a each of which is a lead wire (diameter lmm) formed of a copper-coated silver wire, are connected to the positive electrode 67 and the negative electrode 68 by soldering.
  • FIGS. 10 and 11 show a solar cell module to be incorporated in the stacked solar cell of the present application, which has a sensitivity wavelength band in the short wavelength range of 3300 to 600 nm in the spectrum of sunlight.
  • FIG. 2 is a plan view and a cross-sectional view of a GaAs PZGaP planar light-receiving module 50 which is an example of an element module.
  • An n-type Ga As 0.1 P0.9 layer 52 is formed on an n-type GaP substrate 51 by using a known vapor phase epitaxial growth method.
  • GaAs P is an indirect transition semiconductor with an energy band gap of about 2.21 eV.
  • zinc as a P-type impurity is diffused from above the GaAs P layer 52 to form a P-type GaAsO.1 P0.9 layer 54, and a pn junction 55 is formed in the GaAs P layer 54.
  • a diffusion mask S13N4 film is provided on the peripheral edge of the surface of the n-type G a 'As P layer 52 to perform zinc diffusion to form a planar pn junction. This method is also used in a known method for producing a yellow light emitting diode (LED).
  • LED yellow light emitting diode
  • the positive electrode 57 gold containing a small amount of zinc
  • the negative electrode 58 a small amount of germanium, which make ohmic contact with the surfaces of the p-type GaAs P layer 54 and the n-type GaP substrate 51, respectively
  • Gold containing nickel gold containing nickel
  • the positive electrode 57 and the negative electrode 58 are formed in a thin stripe shape as shown in the figure, and the positions on both sides are aligned.
  • a transparent antireflection film 56 is provided on the surface of the light receiving window surrounded by the stripe-shaped electrodes 57.
  • FIGS. 12 and 13 show a GaP cell group module 90, a GaA1As / GaAs cell group module 100, a Si cell group module 70, and an InGaAsZInP planar light receiving module 60.
  • FIG. 3A is a plan view and a cross-sectional view of a stacked solar cell 200 including four types of four solar cell modules.
  • the solar cell modules 90, 100, 70, and 60 having different sensitivity wavelength bands to the solar spectrum are arranged such that a module having a shorter center wavelength in the sensitivity wavelength band has a light incident side. It is laminated so that it is located at As can be seen from Fig. 14, the center wavelength of the solar cell modules 90, 100, 70, and 60 in the sensitivity wavelength band is the center wavelength of module 90 (about 450 nm), and the center wavelength of module 100 (about 700 nm). The center wavelength of module 70 (about 800 nm) ⁇ the center wavelength of module 60 (about 1300 nm).
  • FIG. 14 shows the solar spectrum obtained by the solar spectrum analyzer, the spectral sensitivity characteristics of the stacked solar cell 200 (solid line), and the solar cells 30, 40, 10, etc. that constitute it.
  • FIG. 5 is a diagram conceptually showing spectral sensitivity characteristics when a single device is used.
  • the gap (shaded area in the figure) of the spectral sensitivity characteristics of the solar spectrum and the stacked solar cell 200 is the unused portion of the solar cell 200 that cannot be photoelectrically converted.
  • the long-wavelength spectral portion exceeding the spectral wavelength range of the spectral sensitivity characteristic of the solar cell 200 is an energy-unused portion that transmits through the solar cell 200. Since these are all loss energies that cannot be photoelectrically converted, it is desirable to minimize them.
  • Modules 90, 100, 70, and 60 each alone have a narrow sensitivity wavelength band, and the energy of the received light that is too large for the band gap cannot be effectively used as output.
  • Fig. 14 shows that the available wavelength range (white area in the figure) is widened by stacking and combining solar cell modules with different energy band gaps (this corresponds to the sensitivity wavelength band), resulting in high photoelectric conversion. Indicates that efficiency can be obtained.
  • FIG. 15 is an explanatory diagram illustrating the following three patterns of the optical path of incident light and the optical path of reflected light in the stacked solar cell 200, and the modes of reflection and absorption. From this figure, the effect of the solar cell 200 incorporating the spherical or nearly spherical zora cells 30, 40, 10 can be seen.
  • a substantially spherical solar cell when light passes through the solar cell, light is absorbed from the point of incidence to the traveling direction according to the size of the light energy, but the light is absorbed by the center of the solar cell. Since the same Pn junction is also on the opposite side, light with a long wavelength within the sensitivity wavelength band is absorbed, and the sensitivity wavelength band is broadened.
  • Case 2 The incident light is reflected from the solar cell surface.
  • Case 4 Light is confined between the transparent cover glass 203 and the cold mirror 66 of the module 60, and the light absorption and photoelectric conversion efficiency are improved.
  • FIG. 16 shows, in the stacked solar cell 200 in which the modules 90, 100, 70, and 60 having the same light receiving unit surface area are stacked, a series connection circuit 205 that connects the modules 90, 100, 70, and 60 in series
  • the optimal series-parallel connection circuit 95, 105, 75 that connects multiple solar cells 30, 40, 10 in each module 90, 100, 70 so as to maximize the output of the solar cell 200.
  • the series-parallel connection circuits 95, 105, and 75 are configured such that the output currents of the modules 90, 100, and 70 are respectively equal to the output current of the module 60 having the smallest output current.
  • the circuits 95, 105, and 75 are configured using the positive and negative electrode leads 93, 95, 103, 104, 73, 74, 67a, and 68a.
  • the maximum output current of the I nGaAs ⁇ nP planar light-receiving module 60 is I
  • the maximum output current when all the solar cells 30 of the G a P cell group module 90 are connected in parallel is 21 and GaA 1 As Assuming a maximum output current of 3 I when all the Zora cells 40 of the / GaAs cell group module 100 are connected in parallel, and a maximum output current of 4 I when all the Zora cells 10 of the Si cell group module 70 are connected in parallel
  • the output current becomes I if the number of series connection of the series-parallel connection circuit 95 is set to two.
  • the maximum output current of one solar cell 30, 40, and 10 is i30, i40, and i10, respectively, and the number of parallel connections of a plurality of solar cells 30, 40, and 10 is N30 and N40, respectively. , N10, and the output current I of the module 60.
  • the maximum output voltage of one solar cell 30, 40, and 10 is v30, v40, and v10, respectively, and the number of series connections of a plurality of solar cells 30, 40, and 10 is M30, M40, and M10, respectively.
  • the output voltage of the module 60 is v60
  • the output (power) of the entire stacked solar cell 200 can be adjusted. Can be maximized.
  • Such series-parallel connection circuits 95, 105, and 75 can be configured via the positive and negative lead wires that are the terminals of the solar cell array, but the output is maximized in response to fluctuations in the spectrum of sunlight and incident light.
  • the series and parallel connection circuits 95, 105, and 75 may be switched by an electronic switch circuit to change the number of series connections and the number of parallel connections.
  • each of the modules 90, 100, and 70 a plurality of solar cells configured by connecting a plurality of solar cells in parallel are connected in series via lead wires. Even if the characteristics vary in one cell, the current is shared according to the variations and the output reduction of the module is minimized. In the conventional stacked solar cell, since only the planar light receiving module is used, it is difficult to match output current by series-parallel connection as in the stacked solar cell 200 of the present application.
  • the cell group modules 90, 100, and 70 are stacked in order from the top, and the planar light receiving module 60 is arranged at the bottom layer.
  • the shorter the center wavelength in the sensitivity wavelength band Since it is arranged so as to be located on the light incident side, light having a short wavelength and poor transmittance can be absorbed in the upper layer, and light having a long wavelength and excellent transmittance can be absorbed in the lower layer.
  • the photoelectric conversion efficiency of 0 can be increased.
  • the module 60 is provided with a cold mirror 66 that reflects light with a wavelength of 1100 nm or less, which facilitates photoelectric conversion in the modules 90, 100, and 70, so that the reflected light can be used to improve the photoelectric conversion efficiency.
  • Each of the cell group modules 90, 100, and 70 functions as a filter for the lower modules 100, 70, and 60, so that the lower modules are unlikely to overheat, and the photoelectric conversion efficiency is reduced. It is advantageous to increase. As shown in Fig. 14, since the sensitivity wavelength bands of the modules 90, 100, 70, and 60 are set appropriately, a wide range of light in the sunlight spectrum can be provided for photoelectric conversion. Conversion efficiency may be increased to 50 'or more.
  • a series-parallel connection circuit 95, 105, 75 is provided to make the output current of each of the modules 90, 100, 70 equal to the output current of the module 60.
  • the 200 power generation functions can be fully demonstrated, and the photoelectric conversion efficiency can be increased.
  • the anti-reflection films 36, 46, and 17 are formed on the zora cells 30, 40, and 10 to be incorporated into the modules 90, 100, and 70, respectively, the cells themselves are oblique.
  • the incident light is reflected and diffused, so that the light absorbing effect increases, and the light confinement effect inside the solar cell 200 also increases, effectively acting to improve the photoelectric conversion efficiency.
  • each module 90, 100, and 70 can be manufactured independently without being affected by the lattice constant of the semiconductor of other solar cell modules. Excellent flexibility.
  • FIGS. 17 and 18 show four types of four types, namely, a GaAs P / GaP planar light receiving module 50, a GaAl 8 3.'0 & 5 cell group module 100, a Si cell group module 70, and a Ge cell group module 80.
  • FIG. 1 is a cross-sectional view of a stacked solar cell 300 constituted by a solar cell module.
  • the aluminum nitride substrate 301 is placed at the bottom layer, and G e cell group module 80, Si cell group module 70, GaA 1 As GaA s cell group module 100, G a As P G a P planar light receiving module 50
  • the transparent glass cover 304 is overlaid on the uppermost layer that forms the light receiving surface for receiving light, and is adhered with a transparent adhesive.
  • Positive and negative lead wires 83 and 84 of module 80, positive and negative lead wires 73 and 74 of module 70, positive and negative lead wires 103 and 104 of module 100, positive and negative lead wires of module 50 57a and 58 a extends to the outside of each module and constitutes a series-parallel circuit (not shown) of each module.
  • an aluminum nitride substrate 301 coated with an aluminum reflective film 302 is fixed via a transparent adhesive.
  • the aluminum reflective film 302 has a function of re-reflecting light passing between the upper solar cells and light reflected inside the module, thereby reducing unused portions of sunlight.
  • a stacked solar cell 300 can basically obtain the same operation and effect as the solar cell 200, the differences from the solar cell 200 will be briefly described.
  • a stacked solar cell 300 can be configured by effectively utilizing a planar light receiving module 50 mainly composed of a GaAsP compound semiconductor having a sensitivity wavelength band in a wavelength region.
  • the antireflection film 56 formed on the uppermost planar light receiving module 50 can enhance the function of confining light inside the solar cell 300.
  • the planar light receiving modules 60 and 50 are used for the high energy band on the short wavelength side or the low energy band on the long wavelength side of the solar spectrum.
  • a solar cell module using a compound semiconductor that achieves high photoelectric conversion in such a wavelength range a spherical solar cell does not necessarily have to be used, and if a flat light receiving module that is easy to manufacture is used, cost reduction will be achieved. It is advantageous in terms of effect.
  • this laminated solar cell 400 is composed of two types of cylindrical solar cell modules 4100 and 420 stacked concentrically in close contact with each other. It has a structure in which a thin transparent glass or synthetic resin transparent cylinder 401 is covered with a thin transparent glass or synthetic resin transparent cylinder 402 as the innermost layer. A fluid passage 403 is formed in the center of the solar cell 400, and heat is applied from the solar cell 400 to the liquid or gas flowing through the fluid passage 403 to cool the solar cell 400. It is supposed to.
  • the inner solar cell module 410 is a Ge cell group module in which a plurality of the Ge solar cells 20 are arranged in a plurality of rows and a plurality of columns to form a cylindrical shape. This is similar to the above-described Ge cell group module 80 having a cylindrical shape.
  • the outer solar cell module 420 has a cylindrical configuration in which a plurality of the above-mentioned G a A 1 A s ZG a A s solar cells 40 are arranged in a plurality of rows and a plurality of columns to form a cylindrical shape. This is an s cell group module. This is the same as the above-described configuration in which the GaAs 1 / A GaAs cell group module 100 has a cylindrical shape.
  • the Ge cell group module 4 10 with the longer center wavelength of the sensitivity wavelength band is placed inside, and G a A 1 A with the shorter center wavelength of the sensitivity wavelength band.
  • the sZG aA s cell group module 420 is arranged outside.
  • the stacked solar cell 400 is a two-layer solar cell in which the solar cell modules 410 and 420 are stacked. However, for sunlight incident from above as shown by an arrow, a four-layer solar It corresponds to a battery, and the left and right sides of the solar cell 400 correspond to four or more layers of solar cells. Therefore, the chance of sunlight encountering the solar cell increases, and the photoelectric conversion efficiency increases.
  • the stacked solar cell 400 since the stacked solar cell 400 has a cylindrical outer shape, it has no directivity with respect to the incident direction of sunlight, and easily absorbs sunlight incident from various directions. In addition, since cooling can be performed by the fluid flowing through the internal fluid, photoelectric conversion efficiency is increased, deterioration due to heat is suppressed, and durability is improved.
  • a two-layer solar cell was described as an example, but a three-layer structure, a four-layer structure, and a five-layer stacked type in which three or more types of cylindrical solar cell modules are concentrically stacked. Solar cells are also feasible.
  • the number of types of solar cell modules that can be incorporated into a stacked solar cell may be two, three, or five or more.
  • At least one type of solar cell module has a plurality of solar cell modules. It is preferable that at least one type of solar cell module is formed of a flat light receiving module. Modules with shorter center wavelengths in the sensitivity wavelength band are placed closer to the sunlight incidence side.
  • one type of planar light receiving module and two types of cell group modules are provided, one planar light receiving module is arranged in the upper layer on the incident side, one cell group module is arranged in the middle layer, and one cell group module Is placed in the lower layer. Conversely, one cell group module is placed in the upper layer on the incident side, one cell group module is placed in the middle layer, and one planar light receiving module is placed in the lower layer.
  • planar light receiving modules For example, two types of planar light receiving modules and two types of cell group modules are provided, the two cell group modules are arranged in the middle layer, and the planar light receiving modules are arranged in the upper and lower layers so that they are sandwiched from above and below. I do.
  • the planar light-receiving module (solar cell module) placed on the top layer is composed of semiconductors that absorb and emit ultraviolet light, such as gallium nitride (GaN) single crystal and silicon carbide (SiC) single crystal. I do. In such a case, power can be generated by effectively utilizing ultraviolet light of high light energy, which not only increases the photoelectric conversion efficiency of the stacked solar cell, but also effectively prevents the lower solar cell module from being deteriorated by the ultraviolet light. Can be suppressed.
  • ultraviolet light gallium nitride
  • SiC silicon carbide
  • a solar cell may be formed of an amorphous semiconductor, such as silicon, capable of photoelectric conversion other than the above-mentioned semiconductor, a ⁇ -V compound semiconductor (eg, InGaN, InGaP, etc.), a VI-VI compound semiconductor (eg, , Zn ⁇ , (1-6), or a chalcogenite compound semiconductor (for example, CuInGaSe2) containing a group VI element (S, Se, Te, etc.).
  • a amorphous semiconductor such as silicon, capable of photoelectric conversion other than the above-mentioned semiconductor, a ⁇ -V compound semiconductor (eg, InGaN, InGaP, etc.), a VI-VI compound semiconductor (eg, , Zn ⁇ , (1-6), or a chalcogenite compound semiconductor (for example, CuInGaSe2) containing a group VI element (S, Se, Te, etc.).
  • the multiple solar cell modules to be incorporated in the stacked solar cell are all composed of cell group modules. In this case, it is desirable to provide a reflection film or a reflection member having a function of reflecting light on the lower or lower surface of the lowermost solar cell module.
  • a flexible transparent sheet is applied to form a flexible laminated solar cell.
  • a transparent insulating glass may be used instead of the transparent synthetic resin 75 of the module 70, 80, 90, 100 Alternatively, a transparent insulating glass may be used.
  • Transmissive parts such as glass and Ti ⁇ 2, which are transparent and have a higher refractive index, are mixed into the light transmitting parts inside the modules 70, 80, 90, 100, and the optical performance of the light transmitting parts is mixed. Enhance.

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  • Photovoltaic Devices (AREA)

Abstract

Cellule solaire multicouche (200) comprenant quatre types de modules de cellules solaires (90, 100, 70, 60) possédant des bandes de longueurs d’onde de sensibilité différente et intégrées en couches par incorporation de quatre modules de cellules solaires de telle sorte qu’un module présentant une longueur d’onde centrale plus courte dans la bande de longueurs d’onde à sensibilité soit plus proche du côté du faisceau solaire incident. Trois types de modules de cellules solaires (90, 100, 70) sont respectivement constitués de modules à groupes de cellules comportant une pluralité de cellules solaires sphériques (30, 40, 10) agencées en une pluralité de lignes et de colonnes et le module de cellules solaires (60) dans la couche la plus en dessous est constitué d’un module récepteur de lumière plan.
PCT/JP2004/003360 2004-03-12 2004-03-12 Cellule solaire multicouche Ceased WO2005088733A1 (fr)

Priority Applications (12)

Application Number Priority Date Filing Date Title
PCT/JP2004/003360 WO2005088733A1 (fr) 2004-03-12 2004-03-12 Cellule solaire multicouche
US10/588,668 US8237045B2 (en) 2004-03-12 2004-03-12 Laminated solar battery
CA2555439A CA2555439C (fr) 2004-03-12 2004-03-12 Pile solaire multicouche
AU2004317236A AU2004317236B2 (en) 2004-03-12 2004-03-12 Multilayer solar cell
EP04720197.5A EP1724841B1 (fr) 2004-03-12 2004-03-12 Cellule solaire multicouche
HK07102121.1A HK1094915B (en) 2004-03-12 Multilayer solar cell
ES04720197.5T ES2616177T3 (es) 2004-03-12 2004-03-12 Célula solar multicapa
EP13152752.5A EP2587552A1 (fr) 2004-03-12 2004-03-12 Batterie solaire stratifiée
CNB2004800339848A CN100561755C (zh) 2004-03-12 2004-03-12 叠层型太阳能电池
JP2006510853A JP4180636B2 (ja) 2004-03-12 2004-03-12 積層型太陽電池
TW093108658A TWI234292B (en) 2004-03-12 2004-03-30 The product of layer type solar cell
US13/453,429 US9159856B2 (en) 2004-03-12 2012-04-23 Laminated solar battery

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP2004/003360 WO2005088733A1 (fr) 2004-03-12 2004-03-12 Cellule solaire multicouche

Related Child Applications (2)

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US10/588,668 A-371-Of-International US8237045B2 (en) 2004-03-12 2004-03-12 Laminated solar battery
US13/453,429 Division US9159856B2 (en) 2004-03-12 2012-04-23 Laminated solar battery

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WO2005088733A1 true WO2005088733A1 (fr) 2005-09-22

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EP (2) EP1724841B1 (fr)
JP (1) JP4180636B2 (fr)
CN (1) CN100561755C (fr)
AU (1) AU2004317236B2 (fr)
CA (1) CA2555439C (fr)
ES (1) ES2616177T3 (fr)
TW (1) TWI234292B (fr)
WO (1) WO2005088733A1 (fr)

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008028118A (ja) * 2006-07-20 2008-02-07 Honda Motor Co Ltd 多接合型太陽電池の製造方法
WO2008059593A1 (fr) 2006-11-17 2008-05-22 Kyosemi Corporation Dispositif de cellule solaire superposée
JP2009543376A (ja) * 2006-07-07 2009-12-03 エナジー，リレイテッド，デバイシズ，インコーポレイテッド 球状太陽電池と伸縮自在に連結したマイクロ集光器
JP2009545182A (ja) * 2006-07-28 2009-12-17 ユニバーシティー、オブ、デラウェア 高効率太陽電池
JP2009545184A (ja) * 2006-07-28 2009-12-17 ユニバーシティー、オブ、デラウェア 周囲のシリコンスカベンジャーセルを備えた高効率太陽電池
US20100132787A1 (en) * 2007-04-04 2010-06-03 Suinno Oy Active solar cell and method of manufacture
CN101968500A (zh) * 2010-06-18 2011-02-09 常州亿晶光电科技有限公司 太阳能电池层压件光检接线器
JP4948423B2 (ja) * 2006-01-11 2012-06-06 京セミ株式会社 受光又は発光用半導体モジュール
US8552519B2 (en) 2006-08-07 2013-10-08 Kyosemi Corporation Semiconductor module for power generation or light emission

Families Citing this family (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPWO2004109890A1 (ja) * 2003-06-09 2006-07-20 京セミ株式会社 発電システム
TWI383509B (zh) * 2007-01-05 2013-01-21 Univ Chang Gung A method of stacking solar cells
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US20100186821A1 (en) 2007-10-01 2010-07-29 Suinno Oy Thermodynamically shielded solar cell
US20090242012A1 (en) * 2007-10-18 2009-10-01 Searete Llc, A Limited Liability Corporation Of The State Of Delaware Method and system for converting light to electric power
US8198115B2 (en) * 2008-04-25 2012-06-12 Ulvac, Inc. Solar cell, and method and apparatus for manufacturing the same
US8314328B1 (en) * 2008-11-12 2012-11-20 Microglo, Llc Solar energy collecting apparatus and method
US9608149B2 (en) * 2008-12-19 2017-03-28 Sphelar Power Corporation Solar cell module and method for producing the same
US8835748B2 (en) * 2009-01-06 2014-09-16 Sunlight Photonics Inc. Multi-junction PV module
US20100200045A1 (en) * 2009-02-09 2010-08-12 Mitchell Kim W Solar power system and method of manufacturing and deployment
ES2366325T3 (es) 2009-03-06 2011-10-19 Suinno Solar Oy Célula solar de bajo coste.
DK2261996T3 (da) 2009-06-10 2011-08-29 Suinno Solar Oy Solcelle med høj ydelse
US8482309B2 (en) * 2010-02-19 2013-07-09 Onamba Co., Ltd. Failure detecting method for a solar power generation system
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FI124818B (fi) * 2011-10-06 2015-02-13 Advacam Oy Hybridipikseli-ilmaisinrakenne ja tämän valmistusmenetelmä
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WO2015006020A1 (fr) * 2013-07-12 2015-01-15 Electric Film Llc Cellules photovoltaïques, systèmes, composants et procédés
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EP3490008A1 (fr) * 2017-11-27 2019-05-29 Nederlandse Organisatie voor toegepast- natuurwetenschappelijk onderzoek TNO Stratifié multicouche photovoltaïque
CN115000282A (zh) * 2022-05-19 2022-09-02 深圳市华星光电半导体显示技术有限公司 Led芯片及其显示面板和制作方法

Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02218174A (ja) * 1989-02-17 1990-08-30 Mitsubishi Electric Corp 光電変換半導体装置
JPH09260698A (ja) * 1996-03-26 1997-10-03 Sanyo Electric Co Ltd 積層型太陽電池
US5720827A (en) 1996-07-19 1998-02-24 University Of Florida Design for the fabrication of high efficiency solar cells
WO1998015983A1 (fr) * 1996-10-09 1998-04-16 Josuke Nakata Dispositif a semi-conducteurs
JP2001102618A (ja) * 1999-09-30 2001-04-13 Sony Corp 受光装置
JP2001156315A (ja) * 1999-11-26 2001-06-08 Mitsui High Tec Inc 太陽電池を含む球状半導体及びそれを用いた球状半導体装置
JP2001168369A (ja) * 1999-12-09 2001-06-22 Joyu Nakada 球状半導体素子を用いた発電装置および球状半導体素子を用いた発光装置
JP2002164554A (ja) * 2000-11-24 2002-06-07 Yoshihiro Hamakawa 光発電装置
JP2002280592A (ja) * 2001-01-15 2002-09-27 Fuji Mach Mfg Co Ltd 光発電パネルおよびその製造方法
WO2004001858A1 (fr) * 2002-06-21 2003-12-31 Josuke Nakata Dispositif recepteur ou emetteur de lumiere et son procede de production

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3990914A (en) * 1974-09-03 1976-11-09 Sensor Technology, Inc. Tubular solar cell
US4130445A (en) * 1978-03-20 1978-12-19 Atlantic Richfield Company Light collector
DE3208078A1 (de) * 1982-03-03 1983-09-08 Chevron Research Co., 94105 San Francisco, Calif. Photozelle zur gewinnung von sonnenenergie
US4773944A (en) * 1987-09-08 1988-09-27 Energy Conversion Devices, Inc. Large area, low voltage, high current photovoltaic modules and method of fabricating same
JP2759294B2 (ja) 1990-02-06 1998-05-28 コニカ株式会社 水現像でエア遮断した感光材料処理装置
JPH03262174A (ja) 1990-03-13 1991-11-21 Nikko Kyodo Co Ltd 酸化物薄膜デバイス
JPH03287579A (ja) 1990-04-03 1991-12-18 Mitsubishi Petrochem Co Ltd 新規なフエノキシプロピオン酸誘導体及びそれを有効成分とする植物生長調節剤
US5538902A (en) * 1993-06-29 1996-07-23 Sanyo Electric Co., Ltd. Method of fabricating a photovoltaic device having a three-dimensional shape
US6150604A (en) * 1995-12-06 2000-11-21 University Of Houston Quantum well thermophotovoltaic energy converter
JP3231244B2 (ja) 1996-07-22 2001-11-19 仗祐 中田 無機材料製の球状体の製造方法及びその製造装置
DE19632627A1 (de) * 1996-08-13 1998-02-19 Siemens Ag Verfahren zum Herstellen eines Licht aussendenden und/oder empfangenden Halbleiterkörpers
KR100377825B1 (ko) * 1996-10-09 2003-07-16 나가다 죠스게 반도체디바이스
AU727487B2 (en) 1997-10-23 2000-12-14 Josuke Nakata Manufacture method for a monocrystal and monocrystal manufacturing device
JP3260389B2 (ja) * 1998-01-23 2002-02-25 仗祐 中田 光電解装置用太陽電池モジュール及び光電解装置
US6706959B2 (en) 2000-11-24 2004-03-16 Clean Venture 21 Corporation Photovoltaic apparatus and mass-producing apparatus for mass-producing spherical semiconductor particles
US6762359B2 (en) 2001-01-15 2004-07-13 Fuji Machine Mfg. Co., Ltd. Photovoltaic panel and method of producing same
CA2456671C (fr) * 2001-08-13 2009-09-22 Josuke Nakata Module photoemetteur ou photorecepteur a semiconducteurs et procede de fabrication
US7208674B2 (en) * 2001-09-11 2007-04-24 Eric Aylaian Solar cell having photovoltaic cells inclined at acute angle to each other
US7777303B2 (en) * 2002-03-19 2010-08-17 The Regents Of The University Of California Semiconductor-nanocrystal/conjugated polymer thin films

Patent Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02218174A (ja) * 1989-02-17 1990-08-30 Mitsubishi Electric Corp 光電変換半導体装置
JPH09260698A (ja) * 1996-03-26 1997-10-03 Sanyo Electric Co Ltd 積層型太陽電池
US5720827A (en) 1996-07-19 1998-02-24 University Of Florida Design for the fabrication of high efficiency solar cells
WO1998015983A1 (fr) * 1996-10-09 1998-04-16 Josuke Nakata Dispositif a semi-conducteurs
JP2001102618A (ja) * 1999-09-30 2001-04-13 Sony Corp 受光装置
JP2001156315A (ja) * 1999-11-26 2001-06-08 Mitsui High Tec Inc 太陽電池を含む球状半導体及びそれを用いた球状半導体装置
JP2001168369A (ja) * 1999-12-09 2001-06-22 Joyu Nakada 球状半導体素子を用いた発電装置および球状半導体素子を用いた発光装置
JP2002164554A (ja) * 2000-11-24 2002-06-07 Yoshihiro Hamakawa 光発電装置
JP2002280592A (ja) * 2001-01-15 2002-09-27 Fuji Mach Mfg Co Ltd 光発電パネルおよびその製造方法
WO2004001858A1 (fr) * 2002-06-21 2003-12-31 Josuke Nakata Dispositif recepteur ou emetteur de lumiere et son procede de production

Non-Patent Citations (4)

* Cited by examiner, † Cited by third party
Title
A.W. BETT ET AL: "III-V compounds for solar cell applications", APPLIED PHYSICS A, vol. 69, 1999, pages 119 - 129, XP000886008 *
ALVI N.S. ET AL: "The potential for increasing the efficiency of photovoltaic systems by using multiple cell concepts", CONFERENCE RECORD OF THE 12TH IEEE PHOTOVOLTAIC SPECIALISTS CONFERENCE, 1976, pages 948 - 956, XP002979527 *
MURAYAMA ET AL: "Light trapping in spherical silicon solar cell module", SOLAR ENERGY MATERIAL AND SOLAR CELLS, vol. 79, 2003, pages 113 - 124, XP002979526 *
See also references of EP1724841A4

Cited By (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4948423B2 (ja) * 2006-01-11 2012-06-06 京セミ株式会社 受光又は発光用半導体モジュール
JP2009543376A (ja) * 2006-07-07 2009-12-03 エナジー，リレイテッド，デバイシズ，インコーポレイテッド 球状太陽電池と伸縮自在に連結したマイクロ集光器
JP2008028118A (ja) * 2006-07-20 2008-02-07 Honda Motor Co Ltd 多接合型太陽電池の製造方法
JP2009545184A (ja) * 2006-07-28 2009-12-17 ユニバーシティー、オブ、デラウェア 周囲のシリコンスカベンジャーセルを備えた高効率太陽電池
JP2009545182A (ja) * 2006-07-28 2009-12-17 ユニバーシティー、オブ、デラウェア 高効率太陽電池
JP2009545183A (ja) * 2006-07-28 2009-12-17 ユニバーシティー、オブ、デラウェア シリコンスカベンジャーセルを備えた高効率太陽電池
US8552519B2 (en) 2006-08-07 2013-10-08 Kyosemi Corporation Semiconductor module for power generation or light emission
CN101553935B (zh) * 2006-11-17 2011-01-19 京半导体股份有限公司 垒层型太阳电池装置
KR101069061B1 (ko) 2006-11-17 2011-09-29 교세미 가부시키가이샤 스택형 태양전지장치
AU2006350830B2 (en) * 2006-11-17 2011-10-06 Sphelar Power Corporation Stacked solar cell device
WO2008059593A1 (fr) 2006-11-17 2008-05-22 Kyosemi Corporation Dispositif de cellule solaire superposée
JP5032496B2 (ja) * 2006-11-17 2012-09-26 京セミ株式会社 スタック型太陽電池装置
US8716590B2 (en) 2006-11-17 2014-05-06 Kyosemi Corporation Stacked solar cell device
US20100132787A1 (en) * 2007-04-04 2010-06-03 Suinno Oy Active solar cell and method of manufacture
JP2010524216A (ja) * 2007-04-04 2010-07-15 スイノ・オイ 能動的太陽電池および製造方法
CN101968500A (zh) * 2010-06-18 2011-02-09 常州亿晶光电科技有限公司 太阳能电池层压件光检接线器

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EP1724841B1 (fr) 2016-11-16
EP2587552A1 (fr) 2013-05-01
JPWO2005088733A1 (ja) 2008-01-31
EP1724841A1 (fr) 2006-11-22
HK1094915A1 (en) 2007-04-13
CA2555439A1 (fr) 2005-09-22
TWI234292B (en) 2005-06-11
US9159856B2 (en) 2015-10-13
ES2616177T3 (es) 2017-06-09
TW200532932A (en) 2005-10-01
CN100561755C (zh) 2009-11-18
CA2555439C (fr) 2012-01-03
AU2004317236B2 (en) 2008-05-22
US20120199179A1 (en) 2012-08-09
US20070169804A1 (en) 2007-07-26
EP1724841A4 (fr) 2007-08-01
US8237045B2 (en) 2012-08-07
AU2004317236A1 (en) 2005-09-22
JP4180636B2 (ja) 2008-11-12
CN1883055A (zh) 2006-12-20

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