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WO2005086855A3 - Electronic junction devices featuring redox electrodes - Google Patents

Electronic junction devices featuring redox electrodes Download PDF

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Publication number
WO2005086855A3
WO2005086855A3 PCT/US2005/007751 US2005007751W WO2005086855A3 WO 2005086855 A3 WO2005086855 A3 WO 2005086855A3 US 2005007751 W US2005007751 W US 2005007751W WO 2005086855 A3 WO2005086855 A3 WO 2005086855A3
Authority
WO
WIPO (PCT)
Prior art keywords
conductive component
electronic junction
junction devices
layer
devices featuring
Prior art date
Application number
PCT/US2005/007751
Other languages
French (fr)
Other versions
WO2005086855A2 (en
Inventor
Richard L Mccreery
Original Assignee
Univ Ohio State
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Univ Ohio State filed Critical Univ Ohio State
Priority to EP05725104A priority Critical patent/EP1730789A4/en
Priority to JP2007502955A priority patent/JP2007528583A/en
Publication of WO2005086855A2 publication Critical patent/WO2005086855A2/en
Publication of WO2005086855A3 publication Critical patent/WO2005086855A3/en

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B9/00—Recording or reproducing using a method not covered by one of the main groups G11B3/00 - G11B7/00; Record carriers therefor
    • G11B9/12—Recording or reproducing using a method not covered by one of the main groups G11B3/00 - G11B7/00; Record carriers therefor using near-field interactions; Record carriers therefor
    • G11B9/14—Recording or reproducing using a method not covered by one of the main groups G11B3/00 - G11B7/00; Record carriers therefor using near-field interactions; Record carriers therefor using microscopic probe means, i.e. recording or reproducing by means directly associated with the tip of a microscopic electrical probe as used in Scanning Tunneling Microscopy [STM] or Atomic Force Microscopy [AFM] for inducing physical or electrical perturbations in a recording medium; Record carriers or media specially adapted for such transducing of information
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B9/00—Recording or reproducing using a method not covered by one of the main groups G11B3/00 - G11B7/00; Record carriers therefor
    • G11B9/12—Recording or reproducing using a method not covered by one of the main groups G11B3/00 - G11B7/00; Record carriers therefor using near-field interactions; Record carriers therefor
    • G11B9/14—Recording or reproducing using a method not covered by one of the main groups G11B3/00 - G11B7/00; Record carriers therefor using near-field interactions; Record carriers therefor using microscopic probe means, i.e. recording or reproducing by means directly associated with the tip of a microscopic electrical probe as used in Scanning Tunneling Microscopy [STM] or Atomic Force Microscopy [AFM] for inducing physical or electrical perturbations in a recording medium; Record carriers or media specially adapted for such transducing of information
    • G11B9/1463—Record carriers for recording or reproduction involving the use of microscopic probe means
    • G11B9/1472—Record carriers for recording or reproduction involving the use of microscopic probe means characterised by the form
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B9/00—Recording or reproducing using a method not covered by one of the main groups G11B3/00 - G11B7/00; Record carriers therefor
    • G11B9/12—Recording or reproducing using a method not covered by one of the main groups G11B3/00 - G11B7/00; Record carriers therefor using near-field interactions; Record carriers therefor
    • G11B9/14—Recording or reproducing using a method not covered by one of the main groups G11B3/00 - G11B7/00; Record carriers therefor using near-field interactions; Record carriers therefor using microscopic probe means, i.e. recording or reproducing by means directly associated with the tip of a microscopic electrical probe as used in Scanning Tunneling Microscopy [STM] or Atomic Force Microscopy [AFM] for inducing physical or electrical perturbations in a recording medium; Record carriers or media specially adapted for such transducing of information
    • G11B9/1463—Record carriers for recording or reproduction involving the use of microscopic probe means
    • G11B9/149—Record carriers for recording or reproduction involving the use of microscopic probe means characterised by the memorising material or structure
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/701—Organic molecular electronic devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/60—Organic compounds having low molecular weight
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/10—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising heterojunctions between organic semiconductors and inorganic semiconductors
    • H10K30/15—Sensitised wide-bandgap semiconductor devices, e.g. dye-sensitised TiO2
    • H10K30/151—Sensitised wide-bandgap semiconductor devices, e.g. dye-sensitised TiO2 the wide bandgap semiconductor comprising titanium oxide, e.g. TiO2
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/701—Langmuir Blodgett films
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/26—Web or sheet containing structurally defined element or component, the element or component having a specified physical dimension
    • Y10T428/261—In terms of molecular thickness or light wave length
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/31504—Composite [nonstructural laminate]
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/31504—Composite [nonstructural laminate]
    • Y10T428/31678—Of metal

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Nanotechnology (AREA)
  • Materials Engineering (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Non-Adjustable Resistors (AREA)
  • Hybrid Cells (AREA)

Abstract

An electronic junction of the present invention comprises: (a) a first conductive component comprising: (i) a substrate having a contact surface; and (ii) at least one layer of molecular units having first and second ends, wherein at least one layer of molecular units is attached through their first ends to the contact surface through a type of association selected from the group consisting of: covalent bonding and strong electronic coupling; and (b) a second conductive component in electrical contact with the second ends of at least one layer of molecular units, the second conductive component comprising at least one metal and at least one metal oxide, wherein at least one conductive component in electronic junction has an electrical property that changes in response to a stimulus.
PCT/US2005/007751 2004-03-08 2005-03-08 Electronic junction devices featuring redox electrodes WO2005086855A2 (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
EP05725104A EP1730789A4 (en) 2004-03-08 2005-03-08 ELECTRONIC JUNCTION DEVICES COMPRISING OXYDO-REDUCTION ELECTRODES
JP2007502955A JP2007528583A (en) 2004-03-08 2005-03-08 Electronic bonding equipment featuring redox electrodes

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/795,904 2004-03-08
US10/795,904 US7141299B2 (en) 2001-01-05 2004-03-08 Electronic junction devices featuring redox electrodes

Publications (2)

Publication Number Publication Date
WO2005086855A2 WO2005086855A2 (en) 2005-09-22
WO2005086855A3 true WO2005086855A3 (en) 2006-05-11

Family

ID=34976192

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2005/007751 WO2005086855A2 (en) 2004-03-08 2005-03-08 Electronic junction devices featuring redox electrodes

Country Status (5)

Country Link
US (1) US7141299B2 (en)
EP (1) EP1730789A4 (en)
JP (1) JP2007528583A (en)
CN (1) CN100533783C (en)
WO (1) WO2005086855A2 (en)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7737433B2 (en) 2004-03-08 2010-06-15 The Ohio State University Research Foundation Electronic junction devices featuring redox electrodes
US20090056994A1 (en) * 2007-08-31 2009-03-05 Kuhr Werner G Methods of Treating a Surface to Promote Metal Plating and Devices Formed
WO2009086441A2 (en) * 2007-12-27 2009-07-09 Zettacore, Inc. Self-contained charge storage molecules for use in molecular capacitors
US8907133B2 (en) 2008-07-14 2014-12-09 Esionic Es, Inc. Electrolyte compositions and electrochemical double layer capacitors formed there from
US8525155B2 (en) * 2008-07-14 2013-09-03 Esionic Es, Inc. Phosphonium ionic liquids, compositions, methods of making and electronic devices formed there from
US8927775B2 (en) 2008-07-14 2015-01-06 Esionic Es, Inc. Phosphonium ionic liquids, salts, compositions, methods of making and devices formed there from
US8891283B2 (en) * 2009-01-05 2014-11-18 Hewlett-Packard Development Company, L.P. Memristive device based on current modulation by trapped charges
CN107072072B (en) * 2010-07-06 2019-10-25 纳美仕有限公司 Copper surface is handled to enhance the method for the adhesion strength to RF magnetron sputtering used in printed circuit board
CN106879193A (en) 2010-07-06 2017-06-20 埃托特克德国有限公司 The method for processing metal surface
US9024297B2 (en) 2010-09-17 2015-05-05 The Governors Of The University Of Alberta Two- and three-terminal molecular electronic devices with ballistic electron transport
JP6158013B2 (en) * 2013-09-24 2017-07-05 株式会社東芝 Organic molecular memory

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6324091B1 (en) * 2000-01-14 2001-11-27 The Regents Of The University Of California Tightly coupled porphyrin macrocycles for molecular memory storage

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IL61678A (en) * 1979-12-13 1984-04-30 Energy Conversion Devices Inc Programmable cell and programmable electronic arrays comprising such cells
JPH0766990B2 (en) * 1988-07-15 1995-07-19 松下電器産業株式会社 Organic device and manufacturing method thereof
JPH02239664A (en) * 1989-03-13 1990-09-21 Olympus Optical Co Ltd electrical storage device
US5521423A (en) * 1993-04-19 1996-05-28 Kawasaki Steel Corporation Dielectric structure for anti-fuse programming element
US5485031A (en) * 1993-11-22 1996-01-16 Actel Corporation Antifuse structure suitable for VLSI application
EP0865078A1 (en) * 1997-03-13 1998-09-16 Hitachi Europe Limited Method of depositing nanometre scale particles
US6128214A (en) * 1999-03-29 2000-10-03 Hewlett-Packard Molecular wire crossbar memory
US6459095B1 (en) * 1999-03-29 2002-10-01 Hewlett-Packard Company Chemically synthesized and assembled electronics devices
US6314019B1 (en) * 1999-03-29 2001-11-06 Hewlett-Packard Company Molecular-wire crossbar interconnect (MWCI) for signal routing and communications
EP1210714A4 (en) * 1999-07-01 2006-01-04 Univ NON-VOLATILE MEMORY ARRANGEMENT WITH HIGH DENSITY
US6208553B1 (en) * 1999-07-01 2001-03-27 The Regents Of The University Of California High density non-volatile memory device incorporating thiol-derivatized porphyrins
US6381169B1 (en) * 1999-07-01 2002-04-30 The Regents Of The University Of California High density non-volatile memory device
US6198655B1 (en) * 1999-12-10 2001-03-06 The Regents Of The University Of California Electrically addressable volatile non-volatile molecular-based switching devices
WO2002037500A1 (en) * 2000-10-31 2002-05-10 The Regents Of The University Of California Organic bistable device and organic memory cells
US7112366B2 (en) * 2001-01-05 2006-09-26 The Ohio State University Chemical monolayer and micro-electronic junctions and devices containing same
US6855950B2 (en) * 2002-03-19 2005-02-15 The Ohio State University Method for conductance switching in molecular electronic junctions
US6674121B2 (en) * 2001-12-14 2004-01-06 The Regents Of The University Of California Method and system for molecular charge storage field effect transistor
US6661691B2 (en) * 2002-04-02 2003-12-09 Hewlett-Packard Development Company, L.P. Interconnection structure and methods

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6324091B1 (en) * 2000-01-14 2001-11-27 The Regents Of The University Of California Tightly coupled porphyrin macrocycles for molecular memory storage

Non-Patent Citations (1)

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Title
ZHOU ET AL: "Nanoscale metal/self-assembled monolayer/metal heterostructures.", APPL PHYS LETT., vol. 71, no. 5, 1997, pages 611 - 613, XP000699626 *

Also Published As

Publication number Publication date
EP1730789A2 (en) 2006-12-13
US7141299B2 (en) 2006-11-28
JP2007528583A (en) 2007-10-11
US20050139254A1 (en) 2005-06-30
CN100533783C (en) 2009-08-26
CN1930694A (en) 2007-03-14
WO2005086855A2 (en) 2005-09-22
EP1730789A4 (en) 2008-07-23

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