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WO2005053004A1 - Substances chimiques de retrait selectif pour des couches sacrificielles, leurs methodes de production et leurs utilisations - Google Patents

Substances chimiques de retrait selectif pour des couches sacrificielles, leurs methodes de production et leurs utilisations Download PDF

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Publication number
WO2005053004A1
WO2005053004A1 PCT/US2004/038301 US2004038301W WO2005053004A1 WO 2005053004 A1 WO2005053004 A1 WO 2005053004A1 US 2004038301 W US2004038301 W US 2004038301W WO 2005053004 A1 WO2005053004 A1 WO 2005053004A1
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Prior art keywords
constituent
etching solution
fluorine
acid
solvent
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John S. Starzynski
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Honeywell International Inc
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Honeywell International Inc
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    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K13/00—Etching, surface-brightening or pickling compositions
    • C09K13/04—Etching, surface-brightening or pickling compositions containing an inorganic acid
    • C09K13/08—Etching, surface-brightening or pickling compositions containing an inorganic acid containing a fluorine compound
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31127—Etching organic layers
    • H01L21/31133—Etching organic layers by chemical means

Definitions

  • the field of the subject matter is selective etch chemistries and cleaning chemistries for semiconductor, electronic and related applications.
  • BACKGROUND To meet the requirements for faster performance, the characteristic dimensions of features of integrated circuit devices have continued to be decreased. Manufacturing of devices with smaller feature sizes introduces new challenges in many of the processes conventionally used in semiconductor fabrication. Dual damascene patterning and via first trench last (VFTL) copper dual damascene patterning through a low dielectric constant (less than about 3) material or ultra low dielectric constant (less than about 2) material is one of these manufacturing methods and can be very difficult.
  • VFTL first trench last
  • each continuous or patterned layer comprises deleterious residues that, if left even partially intact, will contribute to the breakdown and ultimately the failure of any component that comprises that layer.
  • Prior Art Figures 1A-1C show ash residues in a via clean (Prior Art Figure 1A), a trench clean (Prior Art Figure IB) and an etch stop clean (Prior Art Figure 1C) application.
  • Prior Art Figure 1A shows a layered material 100 that comprises a polymer sidewall 110 and ash residues 120.
  • Prior Art Figure IB shows a layered material 200 that comprises a polymer sidewall 210, ash residues 220, a via fence 230 and a via fill 240.
  • the via fence 230 and/or via fill 240 may or may not be present depending on the integration scheme.
  • Prior Art Figure 1C shows a layered material 300 that comprises a polymer sidewall 310, ash residues 320, a via fence 330 and CuO x and/or CuF x residues 350.
  • Prior Art Figures 2A-2C show etch residues, including sidewall polymers, antireflective coatings and other residues, in a via clean ( Figure 2A), a trench clean ( Figure 2B) and an etch stop clean (Figure 2C) application, hi Prior Art Figure 2A, shows a layered material 400 that comprises a polymer sidewall 410, a photoresist layer 420 and an antireflective coating layer 430.
  • Prior Art Figure 2B shows a layered material 500 that comprises a polymer sidewall 510, antireflective coating 520, a via fill 525, a via fence 530, which may or may not be present depending on the integration scheme, and a photoresist 540.
  • the via fence 230 and/or via fill 240 may or may not be present depending on the integration scheme.
  • Prior Art Figure 2C shows a layered material 600 that comprises a polymer sidewall 610, a via fence 630 and CuO x and/or CuF x residues 650.
  • Prior art Figure 3 shows a layered material 700 that comprises a UV exposed and developed photoresist 705, a BARC (Bottom Anti-Reflective Coating) 710, wherein the BARC, which may be organic or inorganic, needs to be removed without impacting critical dimensions.
  • BARC Bottom Anti-Reflective Coating
  • the technique of bulk residue removal by means of a selective chemical etching and in some cases selective chemical cleaning is a key step in the manufacture of many semiconductor and electronic devices, including those mentioned.
  • the goal in successful selective etching and selective cleaning steps is to remove the residue without removing or compromising the desirable components.
  • Each class of semiconductor and electronic materials comprise different chemistries that should be considering when developing the removal chemistry and in several cases, these semiconductor and electronic materials have also been modified to increase etch or removal selectivity.
  • etching and removal solutions should be developed to specifically react with the chemistry of the sacrificial material.
  • the chemistry of the sacrificial material need to be evaluated and considered, but also the chemistry of the surrounding and/or adjacent layers should be considered, because in many instances, the chemistry that will remove the sacrificial layer or layers will also remove or weaken the surrounding or adjacent layers.
  • a) the solution constituents should be able to be tailored to be both a selective etching solution and a selective cleaning solution; b) the solution should be effective in an anhydrous environment and in an aqueous environment; c) should be able to selectively remove deleterious materials and compositions from a surface without removing the layers and materials that are crucial to product success; and d) can both etch and clean effectively at the center of the wafer or surface and at the edge of the wafer or surface.
  • European Patent No. 887,323 teaches an etching and cleaning solution that comprises hydrofluoric acid and ammonium fluoride in propylene carbonate.
  • etching solution is specifically designed to etch silicate glass and silicon dioxide. Based on the chemistry disclosed, it appears that this combination of constituents is selective to silicate glass and silicon dioxide.
  • JP 9235619 and US Issued Patent 5,476,816 uses a similar solution replacing propylene carbonate with ethylene glycol in order to remove insulating coatings.
  • JP 10189722 uses a similar solution as JP 9235619 except water is also added and the solution is used to clean oxides from a surface.
  • ' JP 8222628 and US Issued Patent 3,979,241 use an etching solution of ammonium fluoride and ethylene glycol to remove insulating coatings, and JP 1125831 uses this same blend at a different concentration to remove silicon-based compounds.
  • US Issued Patents 6,090,721 and 5,939,336 blends ammonium fluoride, propylene glycol and water to etch metal-containing etch residues from silicon containing substrates.
  • US Issued Patent 5,478,436 uses ammonium fluoride and ethylene glycol to remove metal-based contaminants from a silicon surface.
  • many of these solutions can be tailored to be a selective removal solution; can be effective in anhydrous environments; and can both etch and clean effectively at the center of the wafer or surface and at the edge of the wafer or surface, none of these compounds can selectively remove deleterious materials from a surface without etching and/or removing necessary silicon-based compounds and/or metal-based layers and compounds.
  • a selective etching solution and a selective cleaning solution that can do at least one of the following: a) the solution constituents should be able to be tailored to be both a selective etching solution and a selective cleaning solution; b) the solution should be effective in both aqueous and anhydrous environments; c) can both etch and clean effectively at the center of the wafer and at the edge of the wafer and at the same time can selectively etch polymeric compositions from a surface without etching silicon-based compounds or metal-based layers and compounds; and d) can both etch and clean effectively surfaces, wherein the solutions are selective to any sacrificial layer and/or modified sacrificial layer in order to advance the production of layered materials, electronic components and semiconductor components.
  • SUMMARY OF THE SUBJECT MATTER Etching solutions described herein include a) at least one fluorine-based constituent, b) at least one acid constituent, such as a strong acid in some cases, and c) a suitable solvent constituent, wherein the etching solution selectively etches at least one sacrificial layer from a surface or layered component.
  • Methods are described herein for producing an etching solution that include: a) providing at least one fluorine-based constituent; b) providing a solvent constituent; c) providing an acid constituent; d) blending the fluorine-based constituent, the acid constituent and the compatible solvent constituent to form a solution, wherein the etching solution selectively etches at least one sacrificial layer from a surface or layered component.
  • etching solution includes: a) providing a hydrogen fluoride constituent; b) providing a hydrochloric acid constituent; c) providing a propylene carbonate constituent; d) blending the constituents to form a solution, wherein the etching solution selectively etches at least one sacrificial layer from a surface or layered component.
  • FIGS. 1A-1C show ash residues in a via clean (Figure 1A), a trench clean ( Figure IB) and an etch stop clean (Figure 1C) application.
  • FIGS. 2A-2C show etch residues in a via clean ( Figure 2A), a trench clean ( Figure 2B) and an etch stop clean (Figure 2C) application.
  • Prior art Figure 3 shows a layered material that comprises an organic BARC (Bottom Anti- Reflective Coating), wherein the organic BARC needs to be removed without impacting critical dimensions.
  • organic BARC Bottom Anti- Reflective Coating
  • Figure 4 show etch rate results for a contemplated etching solution.
  • Figure 5 show etch rate results for a contemplated etching solution.
  • a selective etching solution and a selective cleaning solution has been developed that can do at least one of the following: a) the solution constituents can be tailored to be both a selective etching solution and a selective cleaning solution; b) the solution is effective in both aqueous and non-aqueous environments; c) the solution can both etch and clean effectively at the center of the wafer and at the edge of the wafer and at the same time can selectively etch polymeric compositions from a surface without etching silicon-based compounds or metal-based layers and compounds; and d) can both etch and clean effectively surfaces, wherein the solutions are selective to any sacrificial layer and/or modified sacrificial layer in order to advance the production of layered materials, electronic components and semiconductor components.
  • Etching solutions described herein include a) at least one fluorine-based constituent, b) at least one acid constituent, such as a strong acid in some cases, and c) a suitable solvent constituent, wherein the etching solution selectively etches at least one sacrificial layer from a surface or layered component.
  • the phrase "selectively etches" means that the etching solution comprises constituents that are at a suitable concentration such as to etch at least one sacrificial layer from a surface or layered component while still remaining selective towards adjacent and/or corresponding permanent layers, such as dielectric layers, hardmask layers, conductive layers and combinations thereof.
  • etching solutions contemplated herein can be custom blended for specific applications; however, it is contemplated that the process of custom blending does not require undue experimentation once the disclosure herein, including the stated goals, is understood by one of ordinary skill in the art of etching solutions for electronic and semiconductor applications.
  • Methods for producing an etching solution include: a) providing at least one fluorine- based constituent; b) providing a solvent constituent; c) providing an acid constituent; d) blending the fluorine-based constituent, the acid constituent and the compatible solvent constituent to form a solution, wherein the etching solution selectively etches at least one sacrificial layer from a surface or layered component.
  • etching solution examples include: a) providing a hydrogen fluoride constituent; b) providing a hydrochloric acid constituent; c) providing a propylene carbonate constituent; d) blending the constituents to form a solution, wherein the etching solution selectively etches at least one sacrificial layer from a surface or layered component.
  • these methods of forming and uses of these selective etch and cleaning chemistries include providing the constituents of the selective etch chemistry formulation, blending the constituents to form the formulation and applying the formulation to a surface or substrate.
  • the formulation may be produced in situ (directly on the surface) or may be formed before application to the surface.
  • the etching solution may be in either an aqueous or non-aqueous environment.
  • the term "environment” means that environment in the solution containing the fluorine-based salt and/or the non-polar or compatible solvent.
  • the term "environment” does not mean the environment surrounding the solution, such as the environment present in the lab or in the building.
  • a non-aqueous environment means that the solution is non- aqueous and does not refer to the overall humidity level of the air in the lab or building.
  • the etching solutions contemplated herein utilize at least one fluorine-based compound as one of the constituents of the solutions.
  • Fluorine-based compounds may comprise any suitable fluorine-based compound, such as hydrogen fluoride, fluorine-based salts, such as quaternary ammonium compounds like tetraalkylammonium fluoride compounds, such as tetramethylammonium fluoride, tetrapropylammonium fluoride, tetrabutylammonium fluoride and tetraethylarnmonium fluoride, and other fluorine-based salts, such as ammonium fluoride.
  • fluorine-based compound such as hydrogen fluoride, fluorine-based salts, such as quaternary ammonium compounds like tetraalkylammonium fluoride compounds, such as tetramethylammonium fluoride, tetrapropylammonium fluoride, tetrabutylammonium fluoride and tetraethylarnmonium fluoride, and other fluorine-based salts, such as
  • Ammonium salts are also contemplated, such as those having the formula (R1)(R2)(R3)(R4)NF, where Rl, R2, R3 and R4 may be the same or different and may comprise hydrogen or alkyl groups, including straight-chain and branched alkyl groups.
  • the fluorine-based constituent contemplated herein is present in solution at less than about 10 weight percent relative to the strong acid constituent and the solvent constituent. In some embodiments, the fluorine-based constituent contemplated herein is present in solution at less than about 5 weight percent relative to the strong acid constituent and the solvent constituent. In other embodiments, the fluorine-based constituent contemplated herein is present in solution at less than about 1 weight percent relative to the strong acid constituent and the solvent constituent.
  • the fluorine-based constituent contemplated herein is present in solution at less than about 0.5 weight percent relative to the strong acid constituent and the solvent constituent, hi additional embodiments, the fluorine- based constituent contemplated herein is present in solution at less than about 0.1 weight percent relative to the strong acid constituent and the solvent constituent.
  • Contemplated etching solutions comprise an acid constituent in conjunction with the fluorine-based constituent.
  • Acids contemplated herein may comprise any single weak acid, combination of weak acids, strong acid, combination of strong acids or combinations thereof as long as the acid constituent does not detrimentally interfere with any metal layers and/or conductive layers, hi some embodiments, the acid constituent may comprise hydrochloric acid.
  • the acid constituent contemplated herein is present in solution at less than about 5 weight percent relative to the fluorine-based constituent and the solvent constituent. In some embodiments, the acid constituent contemplated herein is present in solution at less than about 2 weight percent relative to the fluorine-based constituent and the solvent constituent. In other embodiments, the acid constituent contemplated herein is present in solution at less than about 1 weight percent relative to the fluorine-based constituent and the solvent constituent. In yet other embodiments, the acid constituent contemplated herein is present in solution at less than about 0.1 weight percent relative to the fluorine-based constituent and the solvent constituent. In additional embodiments, the acid constituent contemplated herein is present in solution at less than about 0.05 weight percent relative to the fluorine-based constituent and the solvent constituent.
  • Contemplated solvents include any suitable pure or mixture of organic molecules that are volatilized at a desired temperature, such as the critical temperature, or that can facilitate any of the above-mentioned design goals or needs.
  • the solvent may also comprise any suitable pure or mixture of polar and non-polar compounds.
  • pure means that component that has a constant composition. For example, pure water is composed solely of H 2 O.
  • mixture means that component that is not pure, including salt water.
  • polar means that characteristic of a molecule or compound that creates a substantial unequal charge, partial charge or spontaneous charge distribution at one point of or along the molecule or compound.
  • non-polar means that characteristic of a molecule or compound that creates a substantially equal charge, partial charge or spontaneous charge distribution at one point of or along the molecule or compound. It should be understood that those compounds included under the definition of "non-polar” are those compounds that are both clearly non-polar or slightly polar.
  • solvents are non-polar/slightly polar and which solvents are clearly polar in nature.
  • the solvents used herein may comprise any suitable impurity level, such as less than about 1 ppm, less than about 100 ppb, less than about 10 ppb and in some cases, less than about 1 ppb. These solvents may be purchased having impurity levels that are appropriate for use in these contemplated applications or may need to be further purified to remove additional impurities and to reach the less than about 10 ppb and less than about 1 ppb levels that are becoming more desirable in the art of etching and cleaning.
  • the solvent or solvent mixture (comprising at least two solvents) comprises those solvents that are considered part of the hydrocarbon family of solvents. Hydrocarbon solvents are those solvents that comprise carbon and hydrogen.
  • hydrocarbon solvents are non-polar; however, there are a few hydrocarbon solvents that could be considered polar.
  • Hydrocarbon solvents are generally broken down into three classes: aliphatic, cyclic and aromatic. Aliphatic hydrocarbon solvents may comprise both straight-chain compounds and compounds that are branched and possibly crosslinked, however, aliphatic hydrocarbon solvents are not considered cyclic. Cyclic hydrocarbon solvents are those solvents that comprise at least three carbon atoms oriented in a ring structure with properties similar to aliphatic hydrocarbon solvents.
  • Aromatic hydrocarbon solvents are those solvents that comprise generally three or more unsaturated bonds with a single ring or multiple rings attached by a common bond and/or multiple rings fused together.
  • Contemplated hydrocarbon solvents include toluene, xylene, p-xylene, m-xylene, mesitylene, solvent naphtha H, solvent naphtha A, alkanes, such as pentane, hexane, isohexane, heptane, nonane, octane, dodecane, 2-methylbutane, hexadecane, tridecane, pentadecane, cyclopentane, 2,2,4-trimethylpentane, petroleum ethers, halogenated hydrocarbons, such as chlorinated hydrocarbons, nitrated hydrocarbons, benzene, 1,2-dimethylbenzene, 1,2,4-trimethylbenzene, mineral spirits, kerosine, isobutylbenzene, methylnaphthalene, ethyltoluene, ligroine.
  • alkanes such as pentane, he
  • solvents include, but are not limited to, pentane, hexane, heptane, cyclohexane, benzene, toluene, xylene and mixtures or combinations thereof.
  • the solvent or solvent mixture may comprise those solvents that are not considered part of the hydrocarbon solvent family of compounds, such as ketones, such as acetone, diethyl ketone, methyl ethyl ketone and the like, alcohols, esters, carbonate-based compounds, such as propylene carbonate and the like, ethers and amines.
  • Contemplated solvents may also comprise nitrogen, phosphorus, sulfur or a combination thereof.
  • the solvent or solvent mixture may comprise a combination of any of the solvents mentioned herein.
  • the solvent or solvent mixture may comprise butylene carbonate, ethylene carbonate, gamma-butyrolactone, N-methyl-2-pyrrolidone, propylene glycol, ethylene glycol, ethyl lactate, N,N-dimethylactamide, propylene glycol monomethyl ether acetate, dimethyl sulfoxide, pyridine or a combination thereof
  • a method of forming an etching solution contemplated herein comprises a) providing at least one fluorine-based constituent; b) providing a solvent constituent; c) providing an acid constituent; d) blending the fluorine-based constituent, the acid constituent and the compatible solvent constituent to form a solution, wherein the solution constituents are at a suitable concentration to etch sacrificial layers, modified sacrificial layers and/or patterns from a surface without reacting with adjacent and/or
  • Another contemplated method of forming an etching solution comprises a) providing a hydrogen fluoride constituent; b) providing a hydrochloric acid constituent; c) providing a propylene carbonate constituent; d) blending the constituents to form a solution, wherein the solution constituents are at a suitable concentration sacrificial layers, modified sacrificial layers and/or patterns from a surface without reacting with adjacent and/or corresponding layers and/or patterns.
  • the fluorine-based constituent, the acid constituent and/or the solvent constituent may be provided by any suitable method, including a) buying at least some of the fluorine-based constituent, the acid constituent and/or the solvent constituent from a supplier; b) preparing or producing at least some of the fluorine-based constituent, the acid constituent and/or the solvent constituent in house using chemicals provided by another source and/or c) preparing or producing at least some of the fluorine-based constituent, the acid constituent and/or the solvent constituent in house using chemicals also produced or provided in house or at the location.
  • the at least one fluorine-based constituent, the acid constituent and/or the solvent constituent are provided, they are blended to form a solution, wherein the solution constituents are at a suitable concentration to etch sacrificial layers, modified sacrificial layers and/or patterns of both of these compositions from a surface without reacting any adjacent and/or corresponding layers, such as dielectric layers, hard mask layers, metal layers, etc.
  • Blending the constituents may be achieved by utilizing any suitable method or methods known in the art, such as mixing and then stirring the constituents.
  • Another method of blending the constituents may be to synthesize one of the components or constituents directly into the solution. For example, at least one of the fluorine-based constituents could be synthesized directly in the solvent.
  • TMAF can be made or purchased initially or can be made in situ by reacting tetramethylammonium hydroxide (TMAH) with HF.
  • TMAH tetramethylammonium hydroxide
  • a coated wafer or surface may be placed in the path of the solution for etching.
  • the etching solutions will at least etch in part the sacrificial layer, the modified sacrificial layer and/or the sacrificial patterns from the surface, substrate or wafer. In some contemplated embodiments, the etching solutions will etch the entire the sacrificial layer, the modified sacrificial layer and/or the sacrificial patterns from the surface, substrate or wafer.
  • the wafer may be dipped into solution once and held for a particular time period or dipped multiple times, may be rinsed by the solution, may have the solution applied , in a methodical patterned form, may be masked and then rinsed by the solution, etc.
  • the time period is greater than about 5 minutes. In some contemplated embodiments where the wafer or substrate is dipped into solution and held for a particular time period, the time period is greater than about 10 minutes. In other contemplated embodiments where the wafer or substrate is dipped into solution and held for a particular time period, the time period is greater than about 15 minutes.
  • the time period is greater than about 20 minutes.
  • the solution may be sprayed onto a spinning wafer for a particular time period or sprayed multiple times. In contemplated embodiments where the solution is sprayed onto a spinning wafer for a particular time period, the time period is greater than about 20 seconds. In some contemplated embodiments where the solution is sprayed onto a spinning wafer for a particular time period, the time period is greater than about 1 minute. In other contemplated embodiments where the solution is sprayed onto a spinning wafer for a particular time period, the time period is greater than about 3 minutes.
  • the time period is greater than about 10 minutes. In other contemplated embodiments where the solution is sprayed onto a spinning wafer for a particular time period, the time period is greater than about 30 minutes.
  • the cleaning/etching solution may be applied to a semiconductor wafer post photoresist deposition (may be pre or post lithography) for wafer rework purposes, or after plasma treatment (for post etch/post ash residue removal) in either a single wafer or batch processing tool for a period of time between about 15 seconds and about 10 minutes. Processing temperature may be from about 10°C up to about 80°C.
  • the wafer may be dipped into solution once and held for a particular time period or dipped multiple times, may be rinsed by the solution, may have the solution applied in a methodical patterned form, may be masked and then rinsed by the solution, etc.
  • the etching solution may also be held at a particular temperature which optimizes the etching abilities of the solution or may be varied with respect to temperature depending on the wafer or surface to be cleaned.
  • the term "varied" is used herein with respect to temperature to mean that the solution temperature may be varied while the wafer is being processed or may be varied from wafer to wafer depending on the extent of residue that needs to be etched. In some contemplated embodiments, the temperature of the etching solution is held at less than about 30°C.
  • the temperature of the etching solution is held at less than about 25°C. In yet other contemplated embodiments, the temperature of the etching solution is held at about 22°C.
  • At least one layer may be coupled to the surface or substrate creating a multilayered stack. As used herein, the term “coupled” means that the surface and layer or two layers are physically attached to one another or there's a physical attraction between two parts of matter or components, including bond forces such as covalent and ionic bonding, and non-bond forces such as Van der Waals, electrostatic, coulombic, hydrogen bonding and/or magnetic attraction.
  • the term coupled is meant to encompass a situation where the surface and layer or two layers are directly attached to one another, but the term is also meant to encompass the situation where the surface and the layer or plurality of layers are coupled to one another indirectly - such as the case where there's an adhesion promoter layer between the surface and layer or where there's another layer altogether between the surface and layer or plurality of layers.
  • Contemplated dielectric and low dielectric materials that may be used on wafers and layered materials comprise inorganic-based compounds, such as silicon-based disclosed in commonly assigned US Patent 6,143,855 and pending US Serial No.
  • the dielectric and low dielectric materials may be applied by spin coating the material on to the surface, dip coating, spray coating, rolling the material on to the surface, dripping the material on to the surface, and/or spreading the material on to the surface.
  • silicon-based compounds comprise siloxane compounds, such as methylsiloxane, methylsilsesquioxane, phenylsiloxane, phenylsilsesquioxane, methylphenylsiloxane, methylphenylsilsesquioxane, silazane polymers, silicate polymers and mixtures thereof.
  • siloxane compounds such as methylsiloxane, methylsilsesquioxane, phenylsiloxane, phenylsilsesquioxane, methylphenylsiloxane, methylphenylsilsesquioxane
  • silazane polymers silicate polymers and mixtures thereof.
  • a contemplated silazane polymer is perhydrosilazane, which has a "transparent" polymer backbone where chromophores can be attached.
  • siloxane polymers and blockpolymers examples include hydrogensiloxane polymers of the general formula (Ho- ⁇ .oSiO ⁇ .5,2.o) x and hydrogensilsesquioxane polymers, which have the formula (HSiO ⁇ . 5 ) x , where x is greater than about four. Also included are copolymers of hydrogensilsesquioxane and an alkoxyhydridosiloxane or hydroxyhydridosiloxane.
  • Spin-on glass materials additionally include organohydridosiloxane polymers of the general formula (Ho- ⁇ .oSiO 1 .5-2.o)n(Ro- ⁇ .oSiO 1 .5-2.o)mj and organohydridosilsesquioxane polymers of the general formula (HSiO ⁇ .5 ) n (RSiO ⁇ .5 ) m , where m is greater than zero and the sum of n and m is greater than about four and R is alkyl or aryl.
  • organohydridosiloxane polymers have the sum of n and m from about four to about 5000 where R is a C ⁇ -C 20 alkyl group or a C 6 -C 12 aryl group.
  • organohydridosiloxane and organohydridosilsesquioxane polymers are alternatively denoted spin-on-polymers.
  • Some specific examples include alkylhydridosiloxanes, such as methylhydridosiloxanes, ethylhydridosiloxanes, propylhydridosiloxanes, t-butylhydridosiloxanes, phenylhydridosiloxanes; and alkylhydridosilsesquioxanes, such as methylhydridosilsesquioxanes, ethylhydridosilsesquioxanes, propylhydridosilsesquioxanes, t-butylhydridosilsequioxanes, phenylhydridosilsesquioxanes, and combinations thereof.
  • organohydridosiloxane and organo siloxane resins can be utilized for forming caged siloxane polymer films that are useful in the fabrication of a variety of electronic devices, micro-electronic devices, particularly semiconductor integrated circuits and various layered materials for electronic and semiconductor components, including hardmask layers, dielectric layers, etch stop layers and buried etch stop layers.
  • organohydridosiloxane resin layers are quite compatible with other materials that might be used for layered materials and devices, such as adamantane-based compounds, diamantane- based compounds, silicon-core compounds, organic dielectrics, and nanoporous dielectrics.
  • Nanoporous silica dielectric films with dielectric constants ranging from about 1.5 to about 4 can be also as at least one of the layers.
  • Nanoporous silica compounds contemplated herein are those compounds found in US Issued Patents: 6,022,812; 6,037,275; 6,042,994; 6,048,804; 6,090,448; 6,126,733; 6,140,254; 6,204,202; 6,208,041; 6,318,124 and 6,319,855. These types of films are laid down as a silicon-based precursor, aged or condensed in the presence of water and heated sufficiently to remove substantially all of the porogen and to form voids in the film.
  • the silicon-based precursor composition comprises monomers or prepolymers that have the formula: R x -Si-L y , wherein R is independently selected from alkyl groups, aryl groups, hydrogen and combinations thereof, L is an electronegative moiety, such as alkoxy, carboxy, amino, amido, halide, isocyanato and combinations thereof, x is an integer ranging from 0 to about 2, and y is an integer ranging from about 2 to about 4.
  • R is independently selected from alkyl groups, aryl groups, hydrogen and combinations thereof
  • L is an electronegative moiety, such as alkoxy, carboxy, amino, amido, halide, isocyanato and combinations thereof
  • x is an integer ranging from 0 to about 2
  • y is an integer ranging from about 2 to about 4.
  • Other nanoporous compounds and methods can be found in US Issued Patents 6,156,812; 6,171,687; 6,172,128; 6,214,746; 6,313,185; 6,380,
  • Cage molecules or compounds, as described in detail herein, can also be groups that are attached to a polymer backbone, and therefore, can form nanoporous materials where the cage compound forms one type of void (intramolecular) and where the crosslinking of at least one part of the backbone with itself or another backbone can form another type of void (intermolecular). Additional cage molecules, cage compounds and variations of these molecules and compounds are described in detail in PCT/US01/32569 filed on October 18, 2001 , which is herein incorporated by reference in its entirety.
  • Contemplated anti-reflective and absorbing coating materials for ultraviolet photolithography may comprise at least one inorganic-based compound or inorganic material, at least one absorbing compound and in some cases, at least one material modification agent, such as those disclosed in PCT Applications PCT/US02/36327 filed on November 12, 2002; PCT/US03/36354 filed on November 12, 2003 and in US Application Serial No. 10/717028 filed on November 18, 2003.
  • the at least one material modification agent may include any compound or composition that can modify the coating material to improve the photolithographic, compatibility and/or physical quality of the resulting film, such as by improving the etch selectivity and/or stripping selectivity or by minimizing the fill bias.
  • the at least one material modification agent may comprise at least one porogen, at least one leveling agent, at least one high-boiling solvent, at least one densifying agent, at least one catalyst, at least one pH tuning agent, at least one capping agent, at least one replacement solvent, at least one adhesion promoter, such as a resin-based material and/or a combination thereof that are incorporated into the inorganic-based material or compound.
  • the sacrificial compositions and materials may be laid down or formed as a continuous layer of material, in a pattern, in a non-continuous form or as a combination thereof.
  • non-continuous form means that the composition or material is not laid down in a continuous layer and is also not laid down in a pattern.
  • composition or material in a non-continuous form is laid down or formed having a more random or non-pattern-like appearance.
  • Other contemplated layers may include solder materials, coating compositions and other related materials, including solder pastes, polymer solders and other solder-based formulations and materials, such as those found in the following Honeywell International Inc.'s issued patents and pending patent applications, which are inco ⁇ orated herein in their entirety: US Patent Application Serial Nos. 09/851103, 60/357754, 60/372525, 60/396294, and 09/543628; and PCT Pending Application Serial No.: PCT/US02/14613, and all related continuations, divisionals, continuation-in-parts and foreign applications.
  • Electronic-based products can be "finished” in the sense that they are ready to be used in industry or by other consumers. Examples of finished consumer products are a television, a computer, a cell phone, a pager, a palm-type organizer, a portable radio, a car stereo, and a remote control. Also contemplated are "intermediate" products such as circuit boards, chip packaging, and keyboards that are potentially utilized in finished products. Electronic products may also comprise a prototype component, at any stage of development from conceptual model to final scale-up/mock-up. A prototype may or may not contain all of the actual components intended in a finished product, and a prototype may have some components that are constructed out of composite material in order to negate their initial effects on other components while being initially tested.
  • Electronic component means any device or part that can be used in a circuit to obtain some desired electrical action.
  • Electronic components contemplated herein may be classified in many different ways, including classification into active components and passive components.
  • Active components are electronic components capable of some dynamic function, such as amplification, oscillation, or signal control, which usually requires a power source for its operation. Examples are bipolar transistors, field-effect transistors, and integrated circuits.
  • Passive components are electronic components that are static in operation, i.e., are ordinarily incapable of amplification or oscillation, and usually require no power for their characteristic operation. Examples are conventional resistors, capacitors, inductors, diodes, rectifiers and fuses.
  • Electronic components contemplated herein may also be classified as conductors, semiconductors, or insulators.
  • conductors are components that allow charge carriers (such as electrons) to move with ease among atoms as in an electric current.
  • Examples of conductor components are circuit traces and vias comprising metals.
  • Insulators are components where the function is substantially related to the ability of a material to be extremely resistant to conduction of current, such as a material employed to electrically separate other components
  • semiconductors are components having a function that is substantially related to the ability of a material to conduct current with a natural resistivity between conductors and insulators. Examples of semiconductor components are transistors, diodes, some lasers, rectifiers, thyristors and photosensors.
  • Power source components are typically used to power other components, and include batteries, capacitors, coils, and fuel cells.
  • battery means a device that produces usable amounts of electrical power through chemical reactions.
  • rechargeable or secondary batteries are devices that store usable amounts of electrical energy through chemical reactions.
  • Power consuming components include resistors, transistors, ICs, sensors, and the like.
  • Discreet components are devices that offer one particular electrical property concentrated at one place in a circuit. Examples are resistors, capacitors, diodes, and transistors. Integrated components are combinations of components that can provide multiple electrical properties at one place in a circuit. Examples are ICs, i.e., integrated circuits in which multiple components and connecting traces are combined to perform multiple or complex functions such as logic.
  • ICs i.e., integrated circuits in which multiple components and connecting traces are combined to perform multiple or complex functions such as logic.
  • Tables 1-3 show etch rate results using a contemplated etching solution to etch an antireflective coating (ARC) and/or absorbing composition, such as those contemplated herein.
  • Table 1 shows etch rates for several ARCs
  • Table 2 shows etch rates for several dielectric materials
  • Table 3 shows overall etch selectivity.
  • Figures 4-5 show etch rate results (as a function of concentration and in some cases as a function of concentration and bake temperature of the anti-reflective coating) using contemplated etching solutions to etch a DUO layer, which is another anti-reflective coating and/or absorbing composition.

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Inorganic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
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Abstract

L'invention concerne des solutions de gravure comprenant: a) au moins un constituant à base de fluor, b) au moins un constituant acide, notamment un acide fort dans certains cas, et c) un constituant solvant. La solution de gravure de l'invention grave sélectivement au moins une couche sacrificielle, à partir d'une surface ou d'un composant multicouche. L'invention concerne des méthodes pour produire une solution de gravure consistant à: a) fournir au moins un constituant à base de fluor; b) fournir un constituant solvant; c) fournir un constituant acide; d) mélanger le constituant à base de fluor, le constituant acide et le constituant solvant compatible, pour former une solution, la solution de gravure gravant sélectivement au moins une couche sacrificielle, à partir d'une surface ou d'un composant multicouche. D'autres méthodes de formation d'une solution de gravure consistent à: a) fournir un constituant de fluorure d'hydrogène; b) fournir un constituant d'acide hydrochloridrique; c) fournir un constituant de carbonate de propylène; d) mélanger les constituants pour former une solution, la solution de gravure gravant sélectivement au moins une couche sacrificielle, à partir d'une surface ou d'un composant multicouche.
PCT/US2004/038301 2003-11-19 2004-11-17 Substances chimiques de retrait selectif pour des couches sacrificielles, leurs methodes de production et leurs utilisations Ceased WO2005053004A1 (fr)

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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1828070A4 (fr) * 2004-09-10 2008-11-05 Honeywell Int Inc Agent d'attaque chimique de materiau selectif constant a dielectrique elevee
EP1956644A4 (fr) * 2005-12-01 2009-05-20 Mitsubishi Gas Chemical Co Agent de traitement de surface semi-conducteur
WO2011032629A1 (fr) * 2009-09-18 2011-03-24 Merck Patent Gmbh Encres de gravure imprimables par jet d'encre et procédé associé

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US644582A (en) * 1898-04-13 1900-03-06 Henry D Cushman Steam vacuum-pump.
US5476816A (en) * 1994-03-28 1995-12-19 Motorola, Inc. Process for etching an insulating layer after a metal etching step
US6240933B1 (en) * 1997-05-09 2001-06-05 Semitool, Inc. Methods for cleaning semiconductor surfaces
US6562726B1 (en) * 1999-06-29 2003-05-13 Micron Technology, Inc. Acid blend for removing etch residue

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US644582A (en) * 1898-04-13 1900-03-06 Henry D Cushman Steam vacuum-pump.
US5476816A (en) * 1994-03-28 1995-12-19 Motorola, Inc. Process for etching an insulating layer after a metal etching step
US6240933B1 (en) * 1997-05-09 2001-06-05 Semitool, Inc. Methods for cleaning semiconductor surfaces
US6562726B1 (en) * 1999-06-29 2003-05-13 Micron Technology, Inc. Acid blend for removing etch residue

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1828070A4 (fr) * 2004-09-10 2008-11-05 Honeywell Int Inc Agent d'attaque chimique de materiau selectif constant a dielectrique elevee
EP1956644A4 (fr) * 2005-12-01 2009-05-20 Mitsubishi Gas Chemical Co Agent de traitement de surface semi-conducteur
WO2011032629A1 (fr) * 2009-09-18 2011-03-24 Merck Patent Gmbh Encres de gravure imprimables par jet d'encre et procédé associé
CN102498188A (zh) * 2009-09-18 2012-06-13 默克专利股份有限公司 喷墨可印刷的蚀刻油墨及相关方法
CN102498188B (zh) * 2009-09-18 2014-09-17 默克专利股份有限公司 喷墨可印刷的蚀刻油墨及相关方法
AU2010294901B2 (en) * 2009-09-18 2015-01-15 Merck Patent Gmbh Ink jet printable etching inks and associated process

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