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WO2004039731A3 - Nanostructures produced by phase-separation during growth of (iii-v)1-x(iv2)x alloys - Google Patents

Nanostructures produced by phase-separation during growth of (iii-v)1-x(iv2)x alloys Download PDF

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Publication number
WO2004039731A3
WO2004039731A3 PCT/US2002/034861 US0234861W WO2004039731A3 WO 2004039731 A3 WO2004039731 A3 WO 2004039731A3 US 0234861 W US0234861 W US 0234861W WO 2004039731 A3 WO2004039731 A3 WO 2004039731A3
Authority
WO
WIPO (PCT)
Prior art keywords
phase
separation during
alloys
iii
reaction chamber
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/US2002/034861
Other languages
French (fr)
Other versions
WO2004039731A2 (en
Inventor
Andrew G Norman
Jerry M Olson
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Midwest Research Institute
Original Assignee
Midwest Research Institute
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Midwest Research Institute filed Critical Midwest Research Institute
Priority to AU2002368226A priority Critical patent/AU2002368226A1/en
Priority to PCT/US2002/034861 priority patent/WO2004039731A2/en
Priority to US10/532,540 priority patent/US7229498B2/en
Publication of WO2004039731A2 publication Critical patent/WO2004039731A2/en
Publication of WO2004039731A3 publication Critical patent/WO2004039731A3/en
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/301—AIII BV compounds, where A is Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/60—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape characterised by shape
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/60—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape characterised by shape
    • C30B29/605—Products containing multiple oriented crystallites, e.g. columnar crystallites

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Inorganic Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Composite Materials (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

Nanostructures (18) and methods for production thereof by phase separation during metal organic vapor-phase epitaxy (MOVPE). An embodiment of one of the methods may comprise providing a growth surface in a reaction chamber and introducing a first mixture of precursor materials into the reaction chamber to form a buffer layer (12) thereon. A second mixture of precursor materials may be provided into the reaction chamber to form an active region (14) on the buffer layer (12), wherein the nanostructure (18) is embedded in a matrix (16) in the active region (14). Additional steps are also disclosed for preparing the nanostructure (18) product for various applications.
PCT/US2002/034861 2002-10-29 2002-10-29 Nanostructures produced by phase-separation during growth of (iii-v)1-x(iv2)x alloys Ceased WO2004039731A2 (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
AU2002368226A AU2002368226A1 (en) 2002-10-29 2002-10-29 Nanostructures produced by phase-separation during growth of (iii-v)1-x(iv2)x alloys
PCT/US2002/034861 WO2004039731A2 (en) 2002-10-29 2002-10-29 Nanostructures produced by phase-separation during growth of (iii-v)1-x(iv2)x alloys
US10/532,540 US7229498B2 (en) 2002-10-29 2002-10-29 Nanostructures produced by phase-separation during growth of (III-V)1-x(IV2)x alloys

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/US2002/034861 WO2004039731A2 (en) 2002-10-29 2002-10-29 Nanostructures produced by phase-separation during growth of (iii-v)1-x(iv2)x alloys

Publications (2)

Publication Number Publication Date
WO2004039731A2 WO2004039731A2 (en) 2004-05-13
WO2004039731A3 true WO2004039731A3 (en) 2004-06-24

Family

ID=32295745

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2002/034861 Ceased WO2004039731A2 (en) 2002-10-29 2002-10-29 Nanostructures produced by phase-separation during growth of (iii-v)1-x(iv2)x alloys

Country Status (2)

Country Link
AU (1) AU2002368226A1 (en)
WO (1) WO2004039731A2 (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4438049B2 (en) * 2003-08-11 2010-03-24 キヤノン株式会社 Field effect transistor, sensor using the same, and manufacturing method thereof

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5585640A (en) * 1995-01-11 1996-12-17 Huston; Alan L. Glass matrix doped with activated luminescent nanocrystalline particles
US5804475A (en) * 1994-11-14 1998-09-08 The United States Of America As Represented By The Secretary Of The Navy Method of forming an interband lateral resonant tunneling transistor
US5830538A (en) * 1993-12-23 1998-11-03 International Business Machines Corporation Method to form a polycrystalline film on a substrate
US20020079485A1 (en) * 2000-09-22 2002-06-27 Andreas Stintz Quantum dash device
US20020126536A1 (en) * 1997-07-29 2002-09-12 Micron Technology, Inc. Deaprom and transistor with gallium nitride or gallium aluminum nitride gate

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5830538A (en) * 1993-12-23 1998-11-03 International Business Machines Corporation Method to form a polycrystalline film on a substrate
US5804475A (en) * 1994-11-14 1998-09-08 The United States Of America As Represented By The Secretary Of The Navy Method of forming an interband lateral resonant tunneling transistor
US5585640A (en) * 1995-01-11 1996-12-17 Huston; Alan L. Glass matrix doped with activated luminescent nanocrystalline particles
US20020126536A1 (en) * 1997-07-29 2002-09-12 Micron Technology, Inc. Deaprom and transistor with gallium nitride or gallium aluminum nitride gate
US20020079485A1 (en) * 2000-09-22 2002-06-27 Andreas Stintz Quantum dash device

Also Published As

Publication number Publication date
AU2002368226A8 (en) 2004-05-25
AU2002368226A1 (en) 2004-05-25
WO2004039731A2 (en) 2004-05-13

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