WO2004023643A1 - Circuit arrangement having a frequency converter - Google Patents
Circuit arrangement having a frequency converter Download PDFInfo
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- WO2004023643A1 WO2004023643A1 PCT/DE2003/002638 DE0302638W WO2004023643A1 WO 2004023643 A1 WO2004023643 A1 WO 2004023643A1 DE 0302638 W DE0302638 W DE 0302638W WO 2004023643 A1 WO2004023643 A1 WO 2004023643A1
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03D—DEMODULATION OR TRANSFERENCE OF MODULATION FROM ONE CARRIER TO ANOTHER
- H03D7/00—Transference of modulation from one carrier to another, e.g. frequency-changing
- H03D7/14—Balanced arrangements
- H03D7/1425—Balanced arrangements with transistors
- H03D7/1433—Balanced arrangements with transistors using bipolar transistors
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03D—DEMODULATION OR TRANSFERENCE OF MODULATION FROM ONE CARRIER TO ANOTHER
- H03D7/00—Transference of modulation from one carrier to another, e.g. frequency-changing
- H03D7/14—Balanced arrangements
- H03D7/1425—Balanced arrangements with transistors
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03D—DEMODULATION OR TRANSFERENCE OF MODULATION FROM ONE CARRIER TO ANOTHER
- H03D7/00—Transference of modulation from one carrier to another, e.g. frequency-changing
- H03D7/14—Balanced arrangements
- H03D7/1425—Balanced arrangements with transistors
- H03D7/1458—Double balanced arrangements, i.e. where both input signals are differential
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03D—DEMODULATION OR TRANSFERENCE OF MODULATION FROM ONE CARRIER TO ANOTHER
- H03D7/00—Transference of modulation from one carrier to another, e.g. frequency-changing
- H03D7/14—Balanced arrangements
- H03D7/1425—Balanced arrangements with transistors
- H03D7/1491—Arrangements to linearise a transconductance stage of a mixer arrangement
Definitions
- the present invention relates to a circuit arrangement with frequency converter.
- Circuit arrangements with frequency converters are normally used both in radio transmitter arrangements and in radio receivers.
- the frequency converter is used to convert a baseband signal to a high-frequency position, while in a receiver, frequency conversion from a high-frequency reception position to the baseband is carried out.
- Frequency conversion in receivers is normally implemented in terms of circuitry by means of multipliers designed as frequency converters. So-called Gilbert multiplier cells are widely used. These are supplied with a high-frequency useful signal at one input and a so-called local oscillator signal with a carrier frequency at another input.
- the useful signal input of the downward frequency converter is usually designed as a voltage input, which means that the useful signal is supplied in the form of a voltage signal.
- a low-noise preamplifier, LNA is normally connected to the useful signal input of the downward frequency converter, which amplifies a signal which is coupled in by an antenna and which is initially filtered, if necessary, for the further Signal processing strengthened sufficiently.
- LNA and mixers are therefore usually implemented as separate functional units in heterodyne receivers.
- DC direct conversion
- DC receivers for radio applications require high isolation between high-frequency signals and local oscillator signals of approx. 70 dB in order to meet the AM suppression values required in the GSM specifications.
- the object of the present invention is to provide a circuit arrangement with frequency converter which is suitable for downward frequency conversion in direct conversion (DC) receivers.
- a circuit arrangement with a frequency converter with a first direct current path comprising - a mixer cell which is designed as a frequency converter and comprises at least two transistors,
- a cascode transistor which is connected to the at least two transistors of the mixer cell in a cascode circuit, and a feed-in node designed to supply an input signal for the frequency converter in the form of a current signal and with a second direct current path, comprising a preamplifier for preamplifying the input signal with a current decoupling node, which is coupled to the feed-in node in the first direct current path.
- preamplifiers and frequency converters are implemented in a combined circuit structure, the current decoupling node of the preamplifier, at which a preamplified signal is provided, being coupled to the feed-in node of the frequency converter in a current interface.
- the preamplifier serves for preamplification of the useful signal to be supplied to the frequency converter and does not work as a voltage but as a current amplifier.
- the amplifier-mixer structure summarized in accordance with the present principle is distinguished in particular by the fact that it has only one AC (alternating current) signal path. This is preferably designed to carry differential signals.
- the voltage gain at the preamplifier output that is to say at the current decoupling node of the preamplifier, is relatively low.
- no large high-frequency voltage amplitude is formed on the input side of the frequency converter, which could lead to undesired coupling of the high-frequency input signal with the local oscillator signal.
- the AM suppression is therefore good and corresponding specifications, such as those defined in the GSM mobile radio standard, Global System for Mobile Communication, can be easily met.
- a further advantage of the circuitry principle described lies in the likewise lower demands on the compression behavior of the low-noise preamplifier. Compared to two separate preamplifier and mixer blocks with a coupling by means of a voltage signal, a lower gain is achieved in the preamplifier in the case of the present object and the output, namely the current decoupling node of the preamplifier, is only later compressed in comparison with the previously customary implementation.
- the compression behavior is understood to be the non-linear behavior of the transmission characteristic in its marginal areas.
- the preamplifier preferably delivers just enough voltage amplification that the noise properties in the high-frequency range, in the so-called front end of the circuit arrangement for frequency conversion, are within the applicable specification.
- a coupling capacitance which couples the current decoupling node of the preamplifier to the feed-in node of the frequency converter.
- the coupling capacitance is used advantageously for common mode decoupling of the preamplifier and frequency converter and forms the high-frequency current interface between the preamplifier and frequency converter.
- the feed node in the first direct current path for supplying the preamplified useful signal is preferably formed between the cascode transistor and a current source designed against a reference potential connection.
- the feed at the base of the cascode stage results in particularly good isolation of the high-frequency useful signal and the local oscillator signal, which are linked together by the frequency converter with the aim of converting the high-frequency signal into a low-frequency position or into the baseband.
- Preamplifiers and frequency converters are preferably designed for processing differential or symmetrical signals. Compared to the design of preamplifiers and frequency converters for so-called single-ended signals, which can be routed on just one line, the symmetrical design of the signal processing results in the advantage of significantly improved interference signal suppression.
- the mixer cell is preferably designed with four transistors, each of which is connected in pairs and which are connected to form a Gilbert mixer cell.
- the figure shows an exemplary embodiment of the present circuit arrangement with frequency converter using a circuit diagram.
- the figure shows an embodiment of a circuit arrangement with frequency converter constructed in bipolar circuit technology.
- NPN transistors are used as transistors.
- Preamplifiers and high-frequency converters form a circuitry unit in the present circuit arrangement.
- the preamplifier comprises two input transistors 1, 2, which are connected to one another at their emitter connections to form a differential amplifier.
- the common emitter node is connected via a resistor 3 to a reference potential connection 4.
- the base connections of the input transistors 1, 2 form the input 5 of the present circuit arrangement designed for supplying symmetrical or differential high-frequency signals RF, RFX.
- the collector connections of the transistors 1, 2 are each connected to a supply potential connection 8 via a current source 6, 7.
- the potential at the supply potential connection 8 is positive in relation to the reference potential at the reference potential connection 4.
- the collector connections of the input transistors 1, 2 also form a symmetrical decoupling node for current decoupling 9.
- One of the high-frequency ones is at this output
- Useful signal RF, RFX derived, amplified signal can be derived in the form of a current signal.
- a coupling capacitance 10, 11 with one connection each is connected to each collector connection of the input transistors 1, 2.
- the free connections of the coupling capacitors 10, 11 are connected to a feed node 12.
- the feed-in node 12 is between a cascode transistor 13, 14 and a current source 15, 16 in another
- the current sources 15, 16 couple the symmetrical feed node 12 to the reference potential connection 4.
- the cascode transistors 13, 14 are connected with their emitter connections to the feed node 12 and connected to the reference potential connection 4 with their common base connection via an auxiliary voltage source 17.
- the cascode Transistors 13, 14 form with the transistors 20, 21, 22,
- the Gilbert mixer comprises two transistor pairs 18, 19, each of which has two transistors 20, 21; 22, 23 include.
- the transistors 20, 21 of the first pair of transistors 18 are connected to one another at their emitter connections and to the collector connection of the first cascode transistor 13. In analogy to this, the transistors 22, 23 of the second
- Transistor pair 19 of the Gilbert mixer also connected to each other at their emitter nodes and to the collector terminal of the second cascode transistor 14.
- the base connections of the transistors 21, 22 are also together to form a first connection of a local oscillator input
- the high-frequency signal RF, RFX which after its amplification in the Gilbert mixer 18, 19 is combined in a multiplication with the local oscillator signal LO, LOX, is accordingly fed into the Gilbert mixer 18, 19 at the emitter connections via the cascode stage 13, 14.
- the output signal of this high-frequency mixture is available at the collector connections of the two transistor pairs 18, 19, which are interconnected in a cross-coupling.
- the collector connections of the transistors 20, 22 are connected to one another and the collector connections of the transistors 21, 23 are connected to one another and each form a connection of the output 25 of the circuit arrangement.
- the output 25 is also connected via a resistor 26, 27 to the supply potential connection 8.
- a differential intermediate frequency or baseband signal IF, IFX can be tapped at the output 25. According to the present exemplary embodiment, this is a so-called zero IF or low TF signal.
- IF stands for Intermediate Frequency.
- the preamplifier transistors or input transistors 1, 2 provide just enough voltage amplification that the noise characteristics of the front end are within the applicable mobile radio specification.
- This circuit arrangement is based on the GSM, Global mobile radio standard
- the circuit shown is also suitable for other high-frequency applications such as WLAN, wireless local area network.
- the present circuit arrangement is characterized in that a current interface is formed between the input transistors 1, 2, which form the low-noise preamplifier in a radio receiver, and the actual high-frequency mixer 18, 19.
- the present circuit arrangement can be used particularly in receivers that enable a high-frequency signal to be converted directly into the baseband or into a very low intermediate frequency.
- An additional advantage of the present circuitry is the low demands on the compression behavior of both the down-conversion frequency mixer, and the 'low-noise preamplifier, as for one of the mixers or de- modulator a only about 12 receives dB amplified input signal and on the other due to the reduced gain, the output of the low-noise preamplifier will later be compressed.
- a current source can also be provided instead of the resistor 3.
- an additional amplifier stage can be connected between the low-noise preamplifiers 1, 2 and the mixers 18, 19. LIST OF REFERENCE NUMBERS
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- Superheterodyne Receivers (AREA)
Abstract
Description
Beschreibungdescription
Schaltungsanordnung mit FrequenzumsetzerCircuit arrangement with frequency converter
Die vorliegende Erfindung betrifft eine Schaltungsanordnung mit Frequenzumsetzer.The present invention relates to a circuit arrangement with frequency converter.
Schaltungsanordnungen mit Frequenzumsetzer werden normalerweise sowohl in Funksendeanordnungen als auch in Funkempfän- gern eingesetzt. In Sendern dient der Frequenzumsetzer zum Konvertieren eines Basisband-Signals in eine hochfrequente Lage, während in einem Empfänger eine Frequenzumsetzung von einer hochfrequenten Empfangslage in das Basisband durchgeführt wird.Circuit arrangements with frequency converters are normally used both in radio transmitter arrangements and in radio receivers. In transmitters, the frequency converter is used to convert a baseband signal to a high-frequency position, while in a receiver, frequency conversion from a high-frequency reception position to the baseband is carried out.
Je nach dem, ob diese Frequenzumsetzung zwischen Basisband und hochfrequenter Lage in einem Schritt erfolgt oder ob zunächst in eine Zwischenfrequenzebene umgesetzt wird, unterscheidet man homodyne und heterodyne Sender- und Empfänger- Strukturen.A distinction is made between homodyne and heterodyne transmitter and receiver structures, depending on whether this frequency conversion between baseband and high-frequency location takes place in one step or whether it is first implemented in an intermediate frequency level.
Die Frequenzumsetzung in Empfängern wird normalerweise schaltungstechnisch durch als Frequenzumsetzer ausgelegte Multiplizierer realisiert. Verbreitet kommen hierbei sogenannte Gilbert-Multipliziererzellen zum Einsatz. Diesen wird an einem Eingang ein hochfrequentes Nutzsignal zugeführt und an einem anderen Eingang ein sogenanntes Lokaloszillatorsignal mit einer Trägerfrequenz .Frequency conversion in receivers is normally implemented in terms of circuitry by means of multipliers designed as frequency converters. So-called Gilbert multiplier cells are widely used. These are supplied with a high-frequency useful signal at one input and a so-called local oscillator signal with a carrier frequency at another input.
Der NutzSignaleingang des Abwärts-Frequenzumsetzers ist dabei üblicherweise als Spannungseingang ausgebildet, das heißt, daß das Nutzsignal in Form eines SpannungsSignals zugeführt wird. Eingangsseitig am NutzSignaleingang des Abwärts- Frequenzumsetzers ist normalerweise ein rauscharmer Vorver- stärker, englisch: Low Noise Amplifier, LNA angeschlossen, der ein von einer Antenne einkoppelndes Signal, welches gegebenenfalls zunächst gefiltert wird, in für die weitere Si- gnalverarbeitung ausreichender Weise verstärkt. LNA und Mischer sind demnach normalerweise in heterodynen Empfängern als eigenständige Funktionseinheiten ausgeführt.The useful signal input of the downward frequency converter is usually designed as a voltage input, which means that the useful signal is supplied in the form of a voltage signal. A low-noise preamplifier, LNA, is normally connected to the useful signal input of the downward frequency converter, which amplifies a signal which is coupled in by an antenna and which is initially filtered, if necessary, for the further Signal processing strengthened sufficiently. LNA and mixers are therefore usually implemented as separate functional units in heterodyne receivers.
Auf Grund des Bestrebens, immer kleinere Funkempfänger mit ständig abnehmendem Stromverbrauch und geringerem Gewicht bauen zu können, besteht beispielsweise in GSM (Global System for Mobile communication) -Mobilfunkgeräten ein Trend weg von heterodynen Empfängerstrukturen und hin zu Direktumsetzungs- Sendeempfängern. Empfänger mit Direktumsetzung ins Basisband werden auch als Direct Conversion (DC) -Receiver bezeichnet. Sie" ermöglichen eine besonders kostengünstige Massenhersteilbarkeit von Mobilfunkgeräten. Außerdem können DC-Receiver mit einer geringeren Zahl von Bauteilen realisiert werden, da auf SAW-Filter verzichtet werden kann.Due to the endeavor to be able to build ever smaller radio receivers with constantly decreasing power consumption and lower weight, there is, for example, a trend in GSM (Global System for Mobile communication) mobile radio devices away from heterodyne receiver structures and towards direct conversion transceivers. Receivers with a direct conversion to baseband are also known as direct conversion (DC) receivers. They " enable a particularly inexpensive mass producibility of mobile radio devices. In addition, DC receivers can be realized with a smaller number of components, since SAW filters can be dispensed with.
Bei DC-Empfängern für Funkanwendungen ist eine hohe Isolation zwischen Hochfrequenzsignalen und Lokaloszillatorsignalen von ca. 70 dB erforderlich, um die in den GSM-Spezifikationen ge- forderten Werte der AM-Unterdrückung zu erfüllen.DC receivers for radio applications require high isolation between high-frequency signals and local oscillator signals of approx. 70 dB in order to meet the AM suppression values required in the GSM specifications.
Aufgabe der vorliegenden Erfindung ist es, eine Schaltungsanordnung mit Frequenzumsetzer anzugeben, welche zur Abwärts- Frequenzumsetzung in Direktumsetzungs (DC) -Empfängern geeignet ist.The object of the present invention is to provide a circuit arrangement with frequency converter which is suitable for downward frequency conversion in direct conversion (DC) receivers.
Erfindungsgemäß wird die Aufgabe gelöst durch eine Schal- tungsanordnung mit Frequenzumsetzer mit einem ersten Gleichstrompfad, umfassend - eine Mischerzelle, die als Frequenzumsetzer ausgelegt ist und zumindest zwei Transistoren umfaßt,According to the invention, the object is achieved by a circuit arrangement with a frequency converter with a first direct current path, comprising - a mixer cell which is designed as a frequency converter and comprises at least two transistors,
- einen Kaskode-Transistor, der mit den zumindest zwei Transistoren der Mischerzelle in einer Kaskodeschaltung verbunden ist, und - einen Einspeiseknoten ausgelegt zur Zuführung eines Eingangssignals für den Frequenzumsetzer in Form eines Stromsignals und mit einem zweiten Gleichstrompfad, umfassend einen Vorverstärker zum Vorverstärken des Eingangssignals mit einem Stromauskoppelknoten, der mit dem Einspeiseknoten im ersten Gleichstrompfad gekoppelt ist.a cascode transistor, which is connected to the at least two transistors of the mixer cell in a cascode circuit, and a feed-in node designed to supply an input signal for the frequency converter in the form of a current signal and with a second direct current path, comprising a preamplifier for preamplifying the input signal with a current decoupling node, which is coupled to the feed-in node in the first direct current path.
Gemäß dem vorgestellten Prinzip sind Vorverstärker und Frequenzumsetzer in einer zusammengefaßten schaltungstechnischen Struktur realisiert, wobei der Stromauskoppelknoten des Vorverstärkers, an dem ein vorverstärktes Signal bereitgestellt wird, mit dem Einspeiseknoten des Frequenzumsetzers in einer Stromschnittstelle gekoppelt ist. Der Vorverstärker dient dabei zur Vorverstärkung des dem Frequenzumsetzer zuzuführenden Nutzsignals und arbeitet nicht als Spannungs- sondern als Stromverstärker.According to the principle presented, preamplifiers and frequency converters are implemented in a combined circuit structure, the current decoupling node of the preamplifier, at which a preamplified signal is provided, being coupled to the feed-in node of the frequency converter in a current interface. The preamplifier serves for preamplification of the useful signal to be supplied to the frequency converter and does not work as a voltage but as a current amplifier.
Die gemäß vorliegendem Prinzip zusammengefaßte Verstärker- Mischer-Struktur zeichnet sich insbesondere dadurch aus, daß sie lediglich einen AC (Alternating Current, Wechselstrom) - Signalpfad aufweist. Dieser ist bevorzugt zur Führung diffe- rentieller Signale ausgelegt.The amplifier-mixer structure summarized in accordance with the present principle is distinguished in particular by the fact that it has only one AC (alternating current) signal path. This is preferably designed to carry differential signals.
Bei der Schaltungsanordnung gemäß dem vorgeschlagenen Prinzip ist die Spannungsverstärkung am Vorverstärkerausgang, das heißt am Stromauskoppelknoten des Vorverstärkers verhältnis- mäßig gering. Somit wird keine große Hochfrequenz- Spannungsamplitude auf der Eingangsseite des Frequenzumsetzers ausgebildet, die zu unerwünschten Verkopplungen des hochfrequenten Eingangssignals mit dem Lokaloszillatorsignal führen könnte. Die AM-Unterdrückung ist daher gut und ent- sprechende Spezifikationen, wie beispielsweise in dem Mobilfunkstandard GSM, Global System for Mobile Communication festgelegt können problemlos erfüllt werden.In the circuit arrangement according to the proposed principle, the voltage gain at the preamplifier output, that is to say at the current decoupling node of the preamplifier, is relatively low. Thus, no large high-frequency voltage amplitude is formed on the input side of the frequency converter, which could lead to undesired coupling of the high-frequency input signal with the local oscillator signal. The AM suppression is therefore good and corresponding specifications, such as those defined in the GSM mobile radio standard, Global System for Mobile Communication, can be easily met.
Ein zusätzlicher Vorteil der beschriebenen Schaltungsanord- nung ergibt sich durch die geringeren Anforderungen an das Kompressionsverhalten in der Mischerkennlinie, da das Eingangssignal am Mischereingang beziehungsweise an dessen Ein- speiseknoten verhältnismäßig gering ist und die Transistoren der Mischerzelle daher nicht so leicht in Kompression geraten. Hierdurch ergibt sich ein deutlich geringerer Aufwand bezüglich des Frequenzmischers.An additional advantage of the circuit arrangement described results from the lower demands on the compression behavior in the mixer characteristic, since the input signal at the mixer input or at its input feed node is relatively small and therefore the transistors of the mixer cell do not easily come into compression. This results in a significantly lower outlay with regard to the frequency mixer.
Ein noch weiterer Vorteil des beschriebenen schaltungstechnischen Prinzips liegt in den ebenfalls geringeren Anforderungen an das Kompressionsverhalten des rauscharmen Vorverstärkers. Gegenüber zwei getrennten Vorverstärker- und Mischer- blocken mit einer Kopplung durch ein Spannungssignal wird bei vorliegendem Gegenstand eine geringere Verstärkung im Vorverstärker erzielt und dadurch gerät der Ausgang, nämlich der Stromauskoppelknoten des Vorverstärkers, gegenüber der bisher üblichen Realisierung erst später in Kompression.A further advantage of the circuitry principle described lies in the likewise lower demands on the compression behavior of the low-noise preamplifier. Compared to two separate preamplifier and mixer blocks with a coupling by means of a voltage signal, a lower gain is achieved in the preamplifier in the case of the present object and the output, namely the current decoupling node of the preamplifier, is only later compressed in comparison with the previously customary implementation.
Als Kompressionsverhalten wird dabei das nichtlineare Verhalten der Übertragungskennlinie in ihren Randbereichen verstanden.The compression behavior is understood to be the non-linear behavior of the transmission characteristic in its marginal areas.
Der Vorverstärker liefert gemäß dem vorgeschlagenen Prinzip bevorzugt gerade so viel Spannungsverstärkung, daß die Rauscheigenschaften im Hochfrequenzbereich, in dem sogenannten Frontend der Schaltungsanordnung zur Frequenzumsetzung, innerhalb der jeweils geltenden Spezifikation liegen.According to the proposed principle, the preamplifier preferably delivers just enough voltage amplification that the noise properties in the high-frequency range, in the so-called front end of the circuit arrangement for frequency conversion, are within the applicable specification.
Gemäß einer bevorzugten Ausführungsform der vorliegenden Erfindung ist eine Koppelkapazität vorgesehen, die den Stromauskoppelknoten des Vorverstärkers mit dem Einspeiseknoten des Frequenzumsetzers koppelt. Die Koppelkapazität dient mit Vorteil zur Gleichtaktentkopplung von Vorverstärker und Frequenzumsetzer und bildet die hochfrequente Stromsσhnittstelle zwischen Vorverstärker und Frequenzumsetzer.According to a preferred embodiment of the present invention, a coupling capacitance is provided which couples the current decoupling node of the preamplifier to the feed-in node of the frequency converter. The coupling capacitance is used advantageously for common mode decoupling of the preamplifier and frequency converter and forms the high-frequency current interface between the preamplifier and frequency converter.
Der Einspeiseknoten im ersten Gleichstrompfad zur Zuführung des vorverstärkten Nutzsignals ist bevorzugt zwischen dem Kaskode-Transistor und einer gegen einen Bezugspotentialanschluß gestalteten Stromquelle gebildet . Die Einspeisung am Fußpunkt der Kaskodestufe bewirkt dabei eine besonders gute Isolation von hochfrequentem Nutzsignal und Lokaloszillatorsignal, welche von dem Frequenzumsetzer miteinander verknüpft werden mit dem Ziel, das hochfrequente Signal in eine niederfrequente Lage oder ins Basisband zu konvertiere .The feed node in the first direct current path for supplying the preamplified useful signal is preferably formed between the cascode transistor and a current source designed against a reference potential connection. The feed at the base of the cascode stage results in particularly good isolation of the high-frequency useful signal and the local oscillator signal, which are linked together by the frequency converter with the aim of converting the high-frequency signal into a low-frequency position or into the baseband.
Vorverstärker und Frequenzumsetzer sind bevorzugt zur Verar- beitung differentieller oder symmetrischer Signale ausgelegt. Gegenüber einer Auslegung von Vorverstärker und Frequenzumsetzer für sogenannte single-ended-Signale, welche auf nur einer Leitung geführt werden können, ergibt sich durch die symmetrische Ausführung der Signalverarbeitung der Vorteil einer deutlich verbesserten Störsignalunterdrückung.Preamplifiers and frequency converters are preferably designed for processing differential or symmetrical signals. Compared to the design of preamplifiers and frequency converters for so-called single-ended signals, which can be routed on just one line, the symmetrical design of the signal processing results in the advantage of significantly improved interference signal suppression.
Die Mischerzelle ist bevorzugt mit vier jeweils paarweise miteinander verschalteten Transistoren ausgeführt, welche zur Bildung einer Gilbert-Mischerzelle miteinander verschaltet sind.The mixer cell is preferably designed with four transistors, each of which is connected in pairs and which are connected to form a Gilbert mixer cell.
Weitere Einzelheiten und vorteilhafte Ausgestaltungen der vorliegenden Erfindung sind Gegenstand der Unteransprüche .Further details and advantageous embodiments of the present invention are the subject of the dependent claims.
Die Erfindung wird nachfolgend an einem Ausführungsbeispiel anhand der einzigen Zeichnung näher erläutert .The invention is explained in more detail using an exemplary embodiment with reference to the single drawing.
Es zeigt :It shows :
Die Figur eine beispielhafte Ausführungsform der vorliegenden Schaltungsanordnung mit Frequenzumsetzer anhand eines Schaltplanes.The figure shows an exemplary embodiment of the present circuit arrangement with frequency converter using a circuit diagram.
Die Figur zeigt ein Ausführungsbeispiel einer Schaltungsan- Ordnung mit Frequenzumsetzer aufgebaut in bipolarer Schaltungstechnik. Als Transistoren kommen vorliegend NPN- Transistoren zum Einsatz . Vorverstärker und Hochfrequenzumsetzer bilden bei der vorliegenden Schaltungsanordnung eine schaltungstechnische Einheit. Der Vorverstärker umfaßt zwei Eingangstransistoren 1, 2, wel- ehe an ihren Emitteranschlüssen miteinander zur Bildung eines Differenzverstärkers verbunden sind. Der gemeinsame Emitterknoten ist über einen Widerstand 3 gegen einen Bezugspotentialanschluß 4 geschaltet. Die Basisanschlüsse der Eingangstransistoren 1, 2 bilden den zur Zuführung symmetrischer oder differentieller Hochfrequenzsignale RF, RFX ausgelegten Eingang 5 der vorliegenden Schaltungsanordnung. Die Kollek- tbränschlüsse der Transistoren 1, 2 sind über je eine Stromquelle 6, 7 an einen Versorgungspotentialanschluß 8 angeschlossen. Das Potential am Versorgungspotentialanschluß 8 ist bezogen auf das Bezugspotential am Bezugspotentialanschluß 4 positiv.The figure shows an embodiment of a circuit arrangement with frequency converter constructed in bipolar circuit technology. In the present case, NPN transistors are used as transistors. Preamplifiers and high-frequency converters form a circuitry unit in the present circuit arrangement. The preamplifier comprises two input transistors 1, 2, which are connected to one another at their emitter connections to form a differential amplifier. The common emitter node is connected via a resistor 3 to a reference potential connection 4. The base connections of the input transistors 1, 2 form the input 5 of the present circuit arrangement designed for supplying symmetrical or differential high-frequency signals RF, RFX. The collector connections of the transistors 1, 2 are each connected to a supply potential connection 8 via a current source 6, 7. The potential at the supply potential connection 8 is positive in relation to the reference potential at the reference potential connection 4.
Die Kollektoranschlüsse der Eingangstransistoren 1, 2 bilden weiterhin einen symmetrischen Auskoppelknoten zur Stromaus- kopplung 9. An diesem Ausgang ist ein vom hochfrequentenThe collector connections of the input transistors 1, 2 also form a symmetrical decoupling node for current decoupling 9. One of the high-frequency ones is at this output
Nutzsignal RF, RFX abgeleitetes, verstärktes Signal in Form eines Stromsignals ableitbar.Useful signal RF, RFX derived, amplified signal can be derived in the form of a current signal.
An jedem Kollektoranschluß der Eingangstransistoren 1, 2 ist eine Koppelkapazität 10, 11 mit je einem Anschluß angeschaltet. Die freien Anschlüsse der Koppelkapazitäten 10, 11 sind mit einem Einspeiseknoten 12 verbunden.A coupling capacitance 10, 11 with one connection each is connected to each collector connection of the input transistors 1, 2. The free connections of the coupling capacitors 10, 11 are connected to a feed node 12.
Der Einspeiseknoten 12 ist zwischen je einem Kaskodetransi- stör 13, 14 und einer Stromquelle 15, 16 in je einem weiterenThe feed-in node 12 is between a cascode transistor 13, 14 and a current source 15, 16 in another
Gleichstrompfad zwischen Versorgungs- und Bezugspotentialanschluß 8, 4 gebildet. Die Stromquellen 15, 16 koppeln den symmetrischen Einspeiseknoten 12 mit Bezugspotentialänschluß 4. Die Kaskode- ransistoren 13, 14 sind mit Ihren Emitteran- Schlüssen an dem Einspeiseknoten 12 angeschlossen und mit ihrem gemeinsamen Basisanschluß über eine Hilfsspannungsquelle 17 an Bezugspotentialanschluß 4 angeschaltet. Die Kaskode- Transistoren 13, 14 bilden mit den Transistoren 20, 21, 22,DC path between supply and reference potential connection 8, 4 formed. The current sources 15, 16 couple the symmetrical feed node 12 to the reference potential connection 4. The cascode transistors 13, 14 are connected with their emitter connections to the feed node 12 and connected to the reference potential connection 4 with their common base connection via an auxiliary voltage source 17. The cascode Transistors 13, 14 form with the transistors 20, 21, 22,
23 in einem Gilbert-Hochfrequenzmischer 18, 19 je eine Kaskodeschaltung. Dabei umfaßt der Gilbert-Mischer 2 Transistorpaare 18, 19, welche jeweils zwei Transistoren 20, 21; 22, 23 umfassen.23 in a Gilbert high-frequency mixer 18, 19 each a cascode circuit. The Gilbert mixer comprises two transistor pairs 18, 19, each of which has two transistors 20, 21; 22, 23 include.
Die Transistoren 20, 21 des ersten Transistorpaares 18 sind an ihren Emitteranschlüssen miteinander und mit dem Kollektoranschluß des ersten Kaskode-Transistors 13 verbunden. In Analogie hierzu sind die Transistoren 22, 23 des zweitenThe transistors 20, 21 of the first pair of transistors 18 are connected to one another at their emitter connections and to the collector connection of the first cascode transistor 13. In analogy to this, the transistors 22, 23 of the second
Transistorpaares 19 des Gilbert-Mischers ebenfalls an ihren Emitterknoten miteinander und mit dem Kollektoranschluß des zweiten Kaskode-Transistors 14 verbunden. Die Basisanschlüsse der Transistoren 21, 22 sind weiterhin miteinander zur Bil- düng eines ersten Anschlusses eines LokaloszillatoreingangsTransistor pair 19 of the Gilbert mixer also connected to each other at their emitter nodes and to the collector terminal of the second cascode transistor 14. The base connections of the transistors 21, 22 are also together to form a first connection of a local oscillator input
24 verbunden, während die Basisanschlüsse der Transistoren 20, 23 den zweiten Anschluß des Lokaloszillatoreingangs 24 des Hochfrequenzumsetzers bilden.24 connected, while the base connections of the transistors 20, 23 form the second connection of the local oscillator input 24 of the high-frequency converter.
Das Hochfrequenzsignal RF, RFX, welches nach seiner Verstärkung in dem Gilbertmischer 18, 19 mit dem Lokaloszillatorsignal LO, LOX in einer Multiplikation verknüpft wird, wird demnach an den Emitteranschlüssen über die Kaskodestufe 13, 14 in den Gilbertmischer 18, 19 eingespeist. Das Ausgangs- signal dieser Hochfrequenzmischung steht an den Kollektoranschlüssen der beiden Transistorpaare 18, 19 bereit, die in einer Kreuzkopplung miteinander verschaltet sind. Im Einzelnen sind jeweils die Kollektoranschlüsse der Transistoren 20, 22 miteinander und die Kollektoranschlüsse der Transistoren 21, 23 miteinander verbunden und bilden je einen Anschluß des Ausganges 25 der Schaltungsanordnung. Der Ausgang 25 ist weiterhin über je einen Widerstand 26, 27 an Versorgungspotentialanschluß 8 gelegt. Am Ausgang 25 kann ein differentielles Zwischenfrequenz- oder Basisbandsignal IF, IFX abgegriffen werden. Dabei handelt es sich gemäß vorliegendem Ausführungsbeispiel um ein sogenanntes Zero-IF oder Low-TF-Signal . IF steht dabei für Intermediate Frequency, also Zwischenfrequenz .The high-frequency signal RF, RFX, which after its amplification in the Gilbert mixer 18, 19 is combined in a multiplication with the local oscillator signal LO, LOX, is accordingly fed into the Gilbert mixer 18, 19 at the emitter connections via the cascode stage 13, 14. The output signal of this high-frequency mixture is available at the collector connections of the two transistor pairs 18, 19, which are interconnected in a cross-coupling. Specifically, the collector connections of the transistors 20, 22 are connected to one another and the collector connections of the transistors 21, 23 are connected to one another and each form a connection of the output 25 of the circuit arrangement. The output 25 is also connected via a resistor 26, 27 to the supply potential connection 8. A differential intermediate frequency or baseband signal IF, IFX can be tapped at the output 25. According to the present exemplary embodiment, this is a so-called zero IF or low TF signal. IF stands for Intermediate Frequency.
Während bei herkömmlichen rauscharmen Vorverstärkern in Funk- empfängern normalerweise eine Spannungsverstärkung von etwa 25 dB erzielt wird, beträgt die Spannungsverstärkung am Stromauskoppelknoten 9 der vorliegenden Struktur lediglich 12 dB. Das verstärkte Ausgangsspannungssignal steht bei vorliegender Schaltung nicht am Vorverstärker- sondern erst am Mischerausgang an. Somit bildet sich bei der vorgestellten Schaltung keine große RF-Spannungsamplitude im Frontend aus, die" zu unerwünschten Verkoppelungen des Hochfrequenz-Signals RF, RFX mit dem Lokaloszillatorsignal LO, LOX führen könnte. Demnach ist eine gute AM-Unterdrückung sichergestellt .While with conventional low-noise preamplifiers in radio receivers, a voltage gain of approximately 25 dB is normally achieved, the voltage gain at the current decoupling node 9 of the present structure is only 12 dB. The amplified output voltage signal in the present circuit is not present at the preamplifier but only at the mixer output. Thus, in the circuit presented, no large RF voltage amplitude forms in the front end, which "could lead to undesired coupling of the high-frequency signal RF, RFX with the local oscillator signal LO, LOX. This ensures good AM suppression.
Die Vorverstärkertransistoren oder Eingangstransistoren 1, 2 liefern gerade noch soviel Spannungsverstärkung, daß die Rauscheigenschaften des Frontends innerhalb der jeweils geltenden Mobilfunkspezifikation liegen. Die vorliegende Schal- tungsanordnung ist für auf dem Mobilfunkstandard GSM, GlobalThe preamplifier transistors or input transistors 1, 2 provide just enough voltage amplification that the noise characteristics of the front end are within the applicable mobile radio specification. This circuit arrangement is based on the GSM, Global mobile radio standard
System for Mobile communication beruhende Funkempfänger ausgelegt. Ebenso ist die gezeigte Schaltung aber auch für andere Hochfrequenzanwendungen wie WLAN, Wireless Local Area Network, geeignet. Die vorliegende Schaltungsanordnung zeichnet sich dadurch aus, daß zwischen den Eingangstransistoren 1, 2, welche den rauscharmen Vorverstärker in einem Funkempfänger bilden, und dem eigentlichen Hochfrequenzmischer 18, 19 eine Stromschnittstelle gebildet ist.System for Mobile communication based radio receivers. However, the circuit shown is also suitable for other high-frequency applications such as WLAN, wireless local area network. The present circuit arrangement is characterized in that a current interface is formed between the input transistors 1, 2, which form the low-noise preamplifier in a radio receiver, and the actual high-frequency mixer 18, 19.
Wegen der mit der vorliegenden Schaltung erzielbaren hohenBecause of the high achievable with the present circuit
Isolation zwischen Hochfrequenz- und Lokaloszillator- Eingangssignalen von über 70 dB ist die vorliegende Schaltungsanordnung besonders in solchen Empfängern einsetzbar, die eine Direktumsetzung eines Hochfrequenzsignals ins Basis- band oder in eine sehr geringe Zwischenfrequenz ermöglichen. Ein zusätzlicher Vorteil der vorliegenden Schaltungsanordnung liegt in den geringen Anforderungen an das Kompressionsverhalten von sowohl dem Abwärts-Frequenzmischer, als auch dem' rauscharmen Vorverstärker, da zum einen der Mischer oder De- modulator ein lediglich um ca. 12 dB verstärktes Eingangsignal erhält und zum anderen auf Grund der reduzierten Verstärkung der Ausgang des rauscharmen Vorverstärkers selbst später in Kompression gerät.Isolation between high-frequency and local oscillator input signals of over 70 dB, the present circuit arrangement can be used particularly in receivers that enable a high-frequency signal to be converted directly into the baseband or into a very low intermediate frequency. An additional advantage of the present circuitry is the low demands on the compression behavior of both the down-conversion frequency mixer, and the 'low-noise preamplifier, as for one of the mixers or de- modulator a only about 12 receives dB amplified input signal and on the other due to the reduced gain, the output of the low-noise preamplifier will later be compressed.
Selbstverständlich liegt es im Rahmen des vorliegenden Prinzips, anstelle der gezeigten bipolaren Schaltungstechnik die vorliegende Schaltung in Complementary Metal Oxide Semicon- ductor-Schaltungstechnik aufzubauen. Dies kann insbesondere dann von Vorteil sein, wenn eine weiter verringerte Stromauf- nähme erzielt werden soll.Of course, it is within the scope of the present principle to build the present circuit in complementary metal oxide semicon- ductor circuit technology instead of the bipolar circuit technology shown. This can be particularly advantageous if a further reduction in power consumption is to be achieved.
Weiterhin liegt es im Rahmen der Erfindung, anstelle der dargestellten, symmetrischen Ausführung der Schaltung zur Verarbeitung sogenannter differentieller Signale diese für single- ended-Signale auszulegen. Hierdurch kann insbesondere dann, wenn eine geringere Störfestigkeit ausreicht, eine weitere Verringerung der benötigten Chipfläche der vorliegenden Schaltung erzielt werden.Furthermore, it is within the scope of the invention to design the circuit for processing so-called differential signals instead of the symmetrical embodiment shown for single-ended signals. As a result, a further reduction in the required chip area of the present circuit can be achieved in particular if a lower immunity to interference is sufficient.
In alternativen Ausführungsformen kann anstelle des Widerstands 3 auch eine Stromquelle vorgesehen sein.In alternative embodiments, a current source can also be provided instead of the resistor 3.
Anstelle der Stromquellen 6, 7 können in alternativen Ausführungsformen beliebige andere, auch komplexe elektrische La- sten vorgesehen sein.Instead of the current sources 6, 7, any other, even complex, electrical loads can be provided in alternative embodiments.
Zwischen den rauscharmen Vorverstärker 1, 2 und den Mischer 18, 19 kann in alternativen Ausführungen eine zusätzliche Verstärkerstufe eingeschaltet sein. BezugszeichenlisteIn alternative embodiments, an additional amplifier stage can be connected between the low-noise preamplifiers 1, 2 and the mixers 18, 19. LIST OF REFERENCE NUMBERS
1 Eingangstransistor1 input transistor
2 Eingangstransistor 3 Widerstand2 input transistor 3 resistor
4 Bezugspotentialanschluß4 Reference potential connection
5 Eingang5 entrance
6 Stromquelle6 power source
7 Stromquelle 8 Versorgungspotentialanschluß7 power source 8 supply potential connection
9 Stromauskoppelknoten "10 " Koppelkapazität9 current decoupling nodes " 10 " coupling capacity
11 Koppelkapazität11 coupling capacity
12 Einspeiseknoten 13 Kaskodetransistor12 feed nodes 13 cascode transistor
14 Kaskodetransistor14 cascode transistor
15 Stromquelle15 power source
16 Stromquelle16 power source
17 Spannungsquelle 18 Transistorpaar17 voltage source 18 transistor pair
19 Transistorpaar19 transistor pair
20 Transistor20 transistor
21 Transistor21 transistor
22 Transistor 23 Transistor22 transistor 23 transistor
24 Lokaloszillatoreingang24 local oscillator input
25 Ausgang25 exit
26 Widerstand26 resistance
27 Widerstand IF Zwischenfrequenzsignal27 IF resistance IF signal
IFX ZwischenfrequenzsignalIFX intermediate frequency signal
LO LokaloszillatorsignalLO local oscillator signal
LOX LokaloszillatorsignalLOX local oscillator signal
RF Hochfrequenzsignal RFX Hochfrequenzsignal RF RF signal RFX RF signal
Claims
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE10239856.9 | 2002-08-29 | ||
| DE10239856A DE10239856A1 (en) | 2002-08-29 | 2002-08-29 | Circuit arrangement with frequency converter |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| WO2004023643A1 true WO2004023643A1 (en) | 2004-03-18 |
Family
ID=31502131
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| PCT/DE2003/002638 Ceased WO2004023643A1 (en) | 2002-08-29 | 2003-08-06 | Circuit arrangement having a frequency converter |
Country Status (2)
| Country | Link |
|---|---|
| DE (1) | DE10239856A1 (en) |
| WO (1) | WO2004023643A1 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101188402B (en) * | 2007-12-20 | 2010-06-09 | 北京航空航天大学 | A low voltage mixer |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE102004030039B3 (en) * | 2004-06-22 | 2005-12-22 | Infineon Technologies Ag | mixer circuit |
| US20070135076A1 (en) * | 2005-12-09 | 2007-06-14 | Sirific Wireless Corporation | Wideband mixer with multi-standard input |
| DE102008004644A1 (en) | 2008-01-16 | 2009-07-23 | Robert Bosch Gmbh | Monostatic multi-beam radar sensor device for a motor vehicle |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0726646A1 (en) * | 1995-02-13 | 1996-08-14 | Kabushiki Kaisha Toshiba | Frequency converter capable of reducing noise components in local oscillation signals |
| US5920810A (en) * | 1997-05-05 | 1999-07-06 | Motorola, Inc. | Multiplier and method for mixing signals |
| US6073002A (en) * | 1998-05-04 | 2000-06-06 | Motorola | Mixer circuit and communication device using the same |
| US20020094792A1 (en) * | 2001-01-12 | 2002-07-18 | Hitachi, Ltd. | Signal processing semiconductor integrated circuit device and wireless communication system |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5657313A (en) * | 1979-10-16 | 1981-05-19 | Matsushita Electric Ind Co Ltd | Balanced modulator |
| DE3545006A1 (en) * | 1985-12-19 | 1987-07-02 | Philips Patentverwaltung | MODULATOR |
-
2002
- 2002-08-29 DE DE10239856A patent/DE10239856A1/en not_active Ceased
-
2003
- 2003-08-06 WO PCT/DE2003/002638 patent/WO2004023643A1/en not_active Ceased
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0726646A1 (en) * | 1995-02-13 | 1996-08-14 | Kabushiki Kaisha Toshiba | Frequency converter capable of reducing noise components in local oscillation signals |
| US5920810A (en) * | 1997-05-05 | 1999-07-06 | Motorola, Inc. | Multiplier and method for mixing signals |
| US6073002A (en) * | 1998-05-04 | 2000-06-06 | Motorola | Mixer circuit and communication device using the same |
| US20020094792A1 (en) * | 2001-01-12 | 2002-07-18 | Hitachi, Ltd. | Signal processing semiconductor integrated circuit device and wireless communication system |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101188402B (en) * | 2007-12-20 | 2010-06-09 | 北京航空航天大学 | A low voltage mixer |
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|---|---|
| DE10239856A1 (en) | 2004-03-11 |
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