WO2004078410A3 - Agent for increasing selection ratio of polishing rates - Google Patents
Agent for increasing selection ratio of polishing rates Download PDFInfo
- Publication number
- WO2004078410A3 WO2004078410A3 PCT/JP2004/002680 JP2004002680W WO2004078410A3 WO 2004078410 A3 WO2004078410 A3 WO 2004078410A3 JP 2004002680 W JP2004002680 W JP 2004002680W WO 2004078410 A3 WO2004078410 A3 WO 2004078410A3
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- polishing
- agent
- ratio
- rate
- selection ratio
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Ceased
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/04—Aqueous dispersions
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B57/00—Devices for feeding, applying, grading or recovering grinding, polishing or lapping agents
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B7/00—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor
- B24B7/20—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground
- B24B7/22—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground for grinding inorganic material, e.g. stone, ceramics, porcelain
- B24B7/228—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground for grinding inorganic material, e.g. stone, ceramics, porcelain for grinding thin, brittle parts, e.g. semiconductors, wafers
-
- H10P95/062—
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Mechanical Engineering (AREA)
- Ceramic Engineering (AREA)
- Inorganic Chemistry (AREA)
- Dispersion Chemistry (AREA)
- Organic Chemistry (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
- Polishing Bodies And Polishing Tools (AREA)
Abstract
An agent for increasing a selection ratio of polishing rates, wherein the agent comprises an organic cationic compound, which increases a ratio of a polishing rate of a silicon nitride film to a polishing rate of a silicon oxide film, wherein the agent is provided as a component of a polishing composition used together with a fixed abrasive polishing tool comprising a polishing member comprising abrasive grains and a resin; a polishing composition which increases a ratio of a polishing rate of a silicon nitride film to a polishing rate of a silicon oxide film, wherein the polishing composition comprises the above agent, and wherein the polishing composition is used together with a fixed abrasive polishing tool comprising a polishing member comprising abrasive grains and a resin; and a process for increasing a ratio of a polishing rate of a silicon nitride film to a polishing rate of a silicon oxide film, comprising the step of applying the polishing composition to a fixed abrasive polishing tool comprising a polishing member comprising abrasive grains and a resin.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2003-58791 | 2003-03-05 | ||
| JP2003058791A JP2004273547A (en) | 2003-03-05 | 2003-03-05 | Polishing rate selection ratio improver |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| WO2004078410A2 WO2004078410A2 (en) | 2004-09-16 |
| WO2004078410A3 true WO2004078410A3 (en) | 2004-11-04 |
Family
ID=32958805
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| PCT/JP2004/002680 Ceased WO2004078410A2 (en) | 2003-03-05 | 2004-03-03 | Agent for increasing selection ratio of polishing rates |
Country Status (2)
| Country | Link |
|---|---|
| JP (1) | JP2004273547A (en) |
| WO (1) | WO2004078410A2 (en) |
Families Citing this family (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8025808B2 (en) | 2003-04-25 | 2011-09-27 | Saint-Gobain Ceramics & Plastics, Inc. | Methods for machine ceramics |
| US7504044B2 (en) * | 2004-11-05 | 2009-03-17 | Cabot Microelectronics Corporation | Polishing composition and method for high silicon nitride to silicon oxide removal rate ratios |
| JP2006318952A (en) * | 2005-05-10 | 2006-11-24 | Hitachi Chem Co Ltd | Cmp abrasive and method of polishing substrate |
| JP2006339594A (en) * | 2005-06-06 | 2006-12-14 | Seimi Chem Co Ltd | Abrasive for semiconductor |
| CA2672146C (en) * | 2006-12-20 | 2012-08-21 | Saint-Gobain Ceramics & Plastics, Inc. | Methods for machining inorganic, non-metallic workpieces |
| KR101396853B1 (en) | 2007-07-06 | 2014-05-20 | 삼성전자주식회사 | Slurry Composition for Polishing Silicon Nitride, Method of Polishing a Silicon Nitride Layer Using the Slurry Composition and Method of Manufacturing a Semiconductor Device Using the Slurry Composition |
| US8017524B2 (en) | 2008-05-23 | 2011-09-13 | Cabot Microelectronics Corporation | Stable, high rate silicon slurry |
| WO2016132951A1 (en) * | 2015-02-19 | 2016-08-25 | 株式会社フジミインコーポレーテッド | Polishing composition |
| WO2016132952A1 (en) * | 2015-02-20 | 2016-08-25 | 株式会社フジミインコーポレーテッド | Polishing composition |
| JP5843036B1 (en) | 2015-06-23 | 2016-01-13 | コニカミノルタ株式会社 | Method for preparing recycled abrasive slurry |
| JP6806085B2 (en) | 2015-12-09 | 2021-01-06 | コニカミノルタ株式会社 | Abrasive slurry regeneration method |
| JP2019059842A (en) * | 2017-09-26 | 2019-04-18 | 株式会社フジミインコーポレーテッド | Polishing composition, method for producing polishing composition, polishing method and method for producing semiconductor substrate |
| JP7425660B2 (en) * | 2020-04-07 | 2024-01-31 | 花王株式会社 | Polishing liquid composition for silicon oxide film |
Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5958794A (en) * | 1995-09-22 | 1999-09-28 | Minnesota Mining And Manufacturing Company | Method of modifying an exposed surface of a semiconductor wafer |
| EP1050369A2 (en) * | 1999-04-29 | 2000-11-08 | Ebara Corporation | Method and apparatus for polishing workpieces |
| WO2001004231A1 (en) * | 1999-07-13 | 2001-01-18 | Kao Corporation | Polishing liquid composition |
| EP1077241A2 (en) * | 1999-08-17 | 2001-02-21 | L'air Liquide, Societe Anonyme Pour L'etude Et L'exploitation Des Procedes Georges Claude | Composition for use in a chemical-mechanical planarization process |
| WO2001012740A1 (en) * | 1999-08-13 | 2001-02-22 | Cabot Microelectronics Corporation | Polishing system and method of its use |
| EP1106663A1 (en) * | 1999-12-08 | 2001-06-13 | Eastman Kodak Company | Slurry for chemical mechanical polishing silicon dioxide |
| US6358850B1 (en) * | 1999-12-23 | 2002-03-19 | International Business Machines Corporation | Slurry-less chemical-mechanical polishing of oxide materials |
| US20020081949A1 (en) * | 2000-10-23 | 2002-06-27 | Hiroyuki Yoshida | Polishing composition |
| US20020173221A1 (en) * | 2001-03-14 | 2002-11-21 | Applied Materials, Inc. | Method and apparatus for two-step polishing |
-
2003
- 2003-03-05 JP JP2003058791A patent/JP2004273547A/en active Pending
-
2004
- 2004-03-03 WO PCT/JP2004/002680 patent/WO2004078410A2/en not_active Ceased
Patent Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5958794A (en) * | 1995-09-22 | 1999-09-28 | Minnesota Mining And Manufacturing Company | Method of modifying an exposed surface of a semiconductor wafer |
| EP1050369A2 (en) * | 1999-04-29 | 2000-11-08 | Ebara Corporation | Method and apparatus for polishing workpieces |
| WO2001004231A1 (en) * | 1999-07-13 | 2001-01-18 | Kao Corporation | Polishing liquid composition |
| WO2001012740A1 (en) * | 1999-08-13 | 2001-02-22 | Cabot Microelectronics Corporation | Polishing system and method of its use |
| EP1077241A2 (en) * | 1999-08-17 | 2001-02-21 | L'air Liquide, Societe Anonyme Pour L'etude Et L'exploitation Des Procedes Georges Claude | Composition for use in a chemical-mechanical planarization process |
| EP1106663A1 (en) * | 1999-12-08 | 2001-06-13 | Eastman Kodak Company | Slurry for chemical mechanical polishing silicon dioxide |
| US6358850B1 (en) * | 1999-12-23 | 2002-03-19 | International Business Machines Corporation | Slurry-less chemical-mechanical polishing of oxide materials |
| US20020081949A1 (en) * | 2000-10-23 | 2002-06-27 | Hiroyuki Yoshida | Polishing composition |
| US20020173221A1 (en) * | 2001-03-14 | 2002-11-21 | Applied Materials, Inc. | Method and apparatus for two-step polishing |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2004273547A (en) | 2004-09-30 |
| WO2004078410A2 (en) | 2004-09-16 |
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| 121 | Ep: the epo has been informed by wipo that ep was designated in this application | ||
| 122 | Ep: pct application non-entry in european phase |