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WO2004068548A3 - Three dimensional radiation conversion semiconductor devices - Google Patents

Three dimensional radiation conversion semiconductor devices Download PDF

Info

Publication number
WO2004068548A3
WO2004068548A3 PCT/US2004/000201 US2004000201W WO2004068548A3 WO 2004068548 A3 WO2004068548 A3 WO 2004068548A3 US 2004000201 W US2004000201 W US 2004000201W WO 2004068548 A3 WO2004068548 A3 WO 2004068548A3
Authority
WO
WIPO (PCT)
Prior art keywords
semiconductor devices
radiation conversion
junction
conversion semiconductor
dimensional radiation
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/US2004/000201
Other languages
French (fr)
Other versions
WO2004068548A2 (en
Inventor
Glenn Saunders
Partha Dutta
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Rensselaer Polytechnic Institute
Original Assignee
Rensselaer Polytechnic Institute
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Rensselaer Polytechnic Institute filed Critical Rensselaer Polytechnic Institute
Publication of WO2004068548A2 publication Critical patent/WO2004068548A2/en
Publication of WO2004068548A3 publication Critical patent/WO2004068548A3/en
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G21—NUCLEAR PHYSICS; NUCLEAR ENGINEERING
    • G21H—OBTAINING ENERGY FROM RADIOACTIVE SOURCES; APPLICATIONS OF RADIATION FROM RADIOACTIVE SOURCES, NOT OTHERWISE PROVIDED FOR; UTILISING COSMIC RADIATION
    • G21H1/00—Arrangements for obtaining electrical energy from radioactive sources, e.g. from radioactive isotopes, nuclear or atomic batteries
    • G21H1/06—Cells wherein radiation is applied to the junction of different semiconductor materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/14—Shape of semiconductor bodies; Shapes, relative sizes or dispositions of semiconductor regions within semiconductor bodies
    • H10F77/147—Shapes of bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/14—Shape of semiconductor bodies; Shapes, relative sizes or dispositions of semiconductor regions within semiconductor bodies
    • H10F77/148—Shapes of potential barriers

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • General Engineering & Computer Science (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Photovoltaic Devices (AREA)

Abstract

A radiation conversion semiconductor device (1) adapted to convert radiation into electrical energy includes a plurality of semiconductor pillars (3) extending from a base (5), where a semiconductor p-n junction between a p-type semiconductor material and an n-type semiconductor material is located in the plurality of pillars (3). The device also includes a first electrode in electrical contact with the p-type semiconductor material of the p-n junction and a second electrode in electrical contact with the n-type semiconductor material of the p-n junction. The device is adapted to generate electrical energy in response to being irradiated with radiation when a load is applied across the p-n junction.
PCT/US2004/000201 2003-01-21 2004-01-21 Three dimensional radiation conversion semiconductor devices Ceased WO2004068548A2 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US44075303P 2003-01-21 2003-01-21
US60/440,753 2003-01-21

Publications (2)

Publication Number Publication Date
WO2004068548A2 WO2004068548A2 (en) 2004-08-12
WO2004068548A3 true WO2004068548A3 (en) 2004-09-23

Family

ID=32825141

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2004/000201 Ceased WO2004068548A2 (en) 2003-01-21 2004-01-21 Three dimensional radiation conversion semiconductor devices

Country Status (2)

Country Link
TW (1) TW200507286A (en)
WO (1) WO2004068548A2 (en)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7663288B2 (en) 2005-08-25 2010-02-16 Cornell Research Foundation, Inc. Betavoltaic cell
CN101527327B (en) 2008-03-07 2012-09-19 清华大学 Solar cell
CN101552295A (en) 2008-04-03 2009-10-07 清华大学 Solar cell
CN101562204B (en) 2008-04-18 2011-03-23 鸿富锦精密工业（深圳）有限公司 Solar energy battery
EP2099075B1 (en) * 2008-03-07 2015-09-09 Tsing Hua University Photovoltaic device
CN101562203B (en) * 2008-04-18 2014-07-09 清华大学 Solar energy battery
CN102084467A (en) 2008-04-14 2011-06-01 班德加普工程有限公司 Process for fabricating nanowire arrays
RU2608313C2 (en) * 2015-05-14 2017-01-17 Федеральное государственное автономное образовательное учреждение высшего образования "Национальный исследовательский технологический университет "МИСиС" High-voltage converter of ionizing radiation and its manufacturing method
CN106898663A (en) * 2017-02-23 2017-06-27 京东方科技集团股份有限公司 The preparation method and electrical equipment of a kind of solar cell, solar cell
US11081252B2 (en) * 2019-03-27 2021-08-03 The United States Of America As Represented By The Secretary Of The Army Electrophoretic deposition (EPD) of radioisotope and phosphor composite layer for hybrid radioisotope batteries and radioluminescent surfaces

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3094634A (en) * 1953-06-30 1963-06-18 Rca Corp Radioactive batteries
US3969746A (en) * 1973-12-10 1976-07-13 Texas Instruments Incorporated Vertical multijunction solar cell
US4155781A (en) * 1976-09-03 1979-05-22 Siemens Aktiengesellschaft Method of manufacturing solar cells, utilizing single-crystal whisker growth
US5383976A (en) * 1992-06-30 1995-01-24 Jx Crystals, Inc. Compact DC/AC electric power generator using convective liquid cooled low bandgap thermophotovoltaic cell strings and regenerative hydrocarbon burner

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3094634A (en) * 1953-06-30 1963-06-18 Rca Corp Radioactive batteries
US3969746A (en) * 1973-12-10 1976-07-13 Texas Instruments Incorporated Vertical multijunction solar cell
US4155781A (en) * 1976-09-03 1979-05-22 Siemens Aktiengesellschaft Method of manufacturing solar cells, utilizing single-crystal whisker growth
US5383976A (en) * 1992-06-30 1995-01-24 Jx Crystals, Inc. Compact DC/AC electric power generator using convective liquid cooled low bandgap thermophotovoltaic cell strings and regenerative hydrocarbon burner

Also Published As

Publication number Publication date
TW200507286A (en) 2005-02-16
WO2004068548A2 (en) 2004-08-12

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