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WO2004066360A3 - Apparatus and methods for ionized deposition of a film or thin layer - Google Patents

Apparatus and methods for ionized deposition of a film or thin layer Download PDF

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Publication number
WO2004066360A3
WO2004066360A3 PCT/US2004/001798 US2004001798W WO2004066360A3 WO 2004066360 A3 WO2004066360 A3 WO 2004066360A3 US 2004001798 W US2004001798 W US 2004001798W WO 2004066360 A3 WO2004066360 A3 WO 2004066360A3
Authority
WO
WIPO (PCT)
Prior art keywords
methods
film
coil
thin layer
boss
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/US2004/001798
Other languages
French (fr)
Other versions
WO2004066360A2 (en
Inventor
John Mize
Kenneth Niemela
Steven Wu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Honeywell International Inc
Original Assignee
Honeywell International Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Honeywell International Inc filed Critical Honeywell International Inc
Priority to EP04704131A priority Critical patent/EP1595003A4/en
Priority to JP2006501110A priority patent/JP2007524754A/en
Priority to US10/542,040 priority patent/US20060226003A1/en
Publication of WO2004066360A2 publication Critical patent/WO2004066360A2/en
Publication of WO2004066360A3 publication Critical patent/WO2004066360A3/en
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32009Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082Radio frequency generated discharge
    • H01J37/321Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/20Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34Sputtering
    • C23C14/3471Introduction of auxiliary energy into the plasma
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/34Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3402Gas-filled discharge tubes operating with cathodic sputtering using supplementary magnetic fields
    • H01J37/3405Magnetron sputtering
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Plasma & Fusion (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Analytical Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)

Abstract

A coil assembly (200) is described herein that comprises a) at least one coil (220) with a width (240); and b) at least one boss (210) coupled to the at least one coil, wherein the at least one boss comprises at least two support sections. Methods of forming and/or producing coil assemblies are described herein and comprise a) providing a coil; b) providing at least one boss having at least two support sections; and c) coupling the at least one boss to the coil.
PCT/US2004/001798 2003-01-22 2004-01-21 Apparatus and methods for ionized deposition of a film or thin layer Ceased WO2004066360A2 (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
EP04704131A EP1595003A4 (en) 2003-01-22 2004-01-21 Apparatus and methods for ionized deposition of a film or thin layer
JP2006501110A JP2007524754A (en) 2003-01-22 2004-01-21 Apparatus and method for ionizing vapor deposition of thin film or thin layer
US10/542,040 US20060226003A1 (en) 2003-01-22 2004-01-21 Apparatus and methods for ionized deposition of a film or thin layer

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US44199903P 2003-01-22 2003-01-22
US60/441,999 2003-01-22

Publications (2)

Publication Number Publication Date
WO2004066360A2 WO2004066360A2 (en) 2004-08-05
WO2004066360A3 true WO2004066360A3 (en) 2004-12-29

Family

ID=32772003

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2004/001798 Ceased WO2004066360A2 (en) 2003-01-22 2004-01-21 Apparatus and methods for ionized deposition of a film or thin layer

Country Status (5)

Country Link
EP (1) EP1595003A4 (en)
JP (1) JP2007524754A (en)
KR (1) KR20050092431A (en)
CN (1) CN100537830C (en)
WO (1) WO2004066360A2 (en)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101306563B1 (en) * 2012-04-18 2013-09-09 주식회사 엘지화학 Conductive structure body and method for manufacturing the same
KR20220034894A (en) 2019-07-19 2022-03-18 에바텍 아크티엔게젤샤프트 Piezoelectric coating and deposition process
CN120350351B (en) * 2025-05-08 2025-09-19 山西卡仕途自动化装备有限公司 A wheel hub vacuum coating device

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20010007302A1 (en) * 1997-05-16 2001-07-12 Liubo Hong Hybrid coil design for ionized deposition
US20010019016A1 (en) * 1996-05-09 2001-09-06 Anantha Subramani Recessed coil for generating a plasma
US20020047116A1 (en) * 1997-11-26 2002-04-25 Vikram Pavate Coil for sputter deposition
US20020144901A1 (en) * 1996-05-09 2002-10-10 Jaim Nulman Coils for generating a plasma and for sputtering

Family Cites Families (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4647398A (en) 1984-02-03 1987-03-03 Chisso Corporation Liquid-crystalline carbonic acid esters and liquid crystal compositions containing same
US4647498A (en) 1986-01-27 1987-03-03 The Dow Chemical Company Open-cell composition and method of making same
US5986045A (en) 1995-06-26 1999-11-16 Alliedsignal Inc. Poly(arylene ether) compositions and the method for their manufacture
US5959157A (en) 1995-06-26 1999-09-28 Alliedsignal, Inc. Process for making hydroxy-substituted ethynylated biphenyl compounds
DE19714812A1 (en) * 1997-04-10 1998-10-15 Bosch Gmbh Robert Solenoid
US6048804A (en) 1997-04-29 2000-04-11 Alliedsignal Inc. Process for producing nanoporous silica thin films
US6126733A (en) 1997-10-31 2000-10-03 Alliedsignal Inc. Alcohol based precursors for producing nanoporous silica thin films
US6090448A (en) 1997-10-31 2000-07-18 Alliedsignal Inc. Polyol-based precursors for producing nanoporous silica thin films
US6124421A (en) 1997-12-12 2000-09-26 Alliedsignal Inc. Poly(arylene ether) compositions and methods of manufacture thereof
US6042994A (en) 1998-01-20 2000-03-28 Alliedsignal Inc. Nanoporous silica dielectric films modified by electron beam exposure and having low dielectric constant and low water content
US6395651B1 (en) 1998-07-07 2002-05-28 Alliedsignal Simplified process for producing nanoporous silica
US6022812A (en) 1998-07-07 2000-02-08 Alliedsignal Inc. Vapor deposition routes to nanoporous silica
US6037275A (en) 1998-08-27 2000-03-14 Alliedsignal Inc. Nanoporous silica via combined stream deposition
US6140254A (en) 1998-09-18 2000-10-31 Alliedsignal Inc. Edge bead removal for nanoporous dielectric silica coatings
US6172128B1 (en) 1999-04-09 2001-01-09 Honeywell International Inc. Nanoporous polymers crosslinked via cyclic structures
US6156812A (en) 1999-04-09 2000-12-05 Honeywell International Inc. Nanoporous material fabricated using polymeric template strands
US6204202B1 (en) 1999-04-14 2001-03-20 Alliedsignal, Inc. Low dielectric constant porous films
US6214746B1 (en) 1999-05-07 2001-04-10 Honeywell International Inc. Nanoporous material fabricated using a dissolvable reagent
US6277253B1 (en) * 1999-10-06 2001-08-21 Applied Materials, Inc. External coating of tungsten or tantalum or other refractory metal on IMP coils
US6440550B1 (en) 1999-10-18 2002-08-27 Honeywell International Inc. Deposition of fluorosilsesquioxane films
US6171687B1 (en) 1999-10-18 2001-01-09 Honeywell International Inc. Infiltrated nanoporous materials and methods of producing same
TW503442B (en) * 2000-02-29 2002-09-21 Applied Materials Inc Coil and coil support for generating a plasma
CN108293126B (en) 2015-10-19 2022-04-15 三星电子株式会社 Receiving apparatus and decoding method thereof

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20010019016A1 (en) * 1996-05-09 2001-09-06 Anantha Subramani Recessed coil for generating a plasma
US20020144901A1 (en) * 1996-05-09 2002-10-10 Jaim Nulman Coils for generating a plasma and for sputtering
US20010007302A1 (en) * 1997-05-16 2001-07-12 Liubo Hong Hybrid coil design for ionized deposition
US20020047116A1 (en) * 1997-11-26 2002-04-25 Vikram Pavate Coil for sputter deposition

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
See also references of EP1595003A4 *

Also Published As

Publication number Publication date
CN1764736A (en) 2006-04-26
WO2004066360A2 (en) 2004-08-05
KR20050092431A (en) 2005-09-21
EP1595003A4 (en) 2008-03-26
EP1595003A2 (en) 2005-11-16
JP2007524754A (en) 2007-08-30
CN100537830C (en) 2009-09-09

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