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WO2004059689A3 - Method and apparatus for monitoring a plasma in a material processing system - Google Patents

Method and apparatus for monitoring a plasma in a material processing system Download PDF

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Publication number
WO2004059689A3
WO2004059689A3 PCT/IB2003/006458 IB0306458W WO2004059689A3 WO 2004059689 A3 WO2004059689 A3 WO 2004059689A3 IB 0306458 W IB0306458 W IB 0306458W WO 2004059689 A3 WO2004059689 A3 WO 2004059689A3
Authority
WO
WIPO (PCT)
Prior art keywords
plasma
processing system
material processing
monitoring
responsive sensors
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/IB2003/006458
Other languages
French (fr)
Other versions
WO2004059689A2 (en
Inventor
James E Klekotka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokyo Electron Ltd
Original Assignee
Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Priority to AU2003299437A priority Critical patent/AU2003299437A1/en
Priority to JP2004563531A priority patent/JP2006512762A/en
Priority to EP03799732A priority patent/EP1579470A2/en
Publication of WO2004059689A2 publication Critical patent/WO2004059689A2/en
Publication of WO2004059689A3 publication Critical patent/WO2004059689A3/en
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67253—Process monitoring, e.g. flow or thickness monitoring
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H01J37/32935—Monitoring and controlling tubes by information coming from the object and/or discharge
    • H10P72/0604—
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67069—Apparatus for fluid treatment for etching for drying etching
    • H10P72/0421—

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Chemical & Material Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Chemical Vapour Deposition (AREA)
  • Plasma Technology (AREA)
  • Drying Of Semiconductors (AREA)

Abstract

The present invention presents an improved apparatus and method for monitoring a material processing system (100), wherein the material processing system includes a plasma processing tool, a number of RF-responsive sensors (190) coupled to the plasma processing tool to generate and transmit plasma data, and a sensor interface assembly (SIA) (180) configured to receive the plasma data from the plurality of RF-responsive sensors.
PCT/IB2003/006458 2002-12-31 2003-11-25 Method and apparatus for monitoring a plasma in a material processing system Ceased WO2004059689A2 (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
AU2003299437A AU2003299437A1 (en) 2002-12-31 2003-11-25 Method and apparatus for monitoring a plasma in a material processing system
JP2004563531A JP2006512762A (en) 2002-12-31 2003-11-25 Method and apparatus for monitoring plasma in a material processing system
EP03799732A EP1579470A2 (en) 2002-12-31 2003-11-25 Method and apparatus for monitoring a plasma in a material processing system

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/331,341 US20040127031A1 (en) 2002-12-31 2002-12-31 Method and apparatus for monitoring a plasma in a material processing system
US10/331,341 2002-12-31

Publications (2)

Publication Number Publication Date
WO2004059689A2 WO2004059689A2 (en) 2004-07-15
WO2004059689A3 true WO2004059689A3 (en) 2005-01-13

Family

ID=32654707

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/IB2003/006458 Ceased WO2004059689A2 (en) 2002-12-31 2003-11-25 Method and apparatus for monitoring a plasma in a material processing system

Country Status (7)

Country Link
US (1) US20040127031A1 (en)
EP (1) EP1579470A2 (en)
JP (1) JP2006512762A (en)
KR (1) KR20050089995A (en)
CN (1) CN1720598A (en)
AU (1) AU2003299437A1 (en)
WO (1) WO2004059689A2 (en)

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US6985787B2 (en) * 2002-12-31 2006-01-10 Tokyo Electron Limited Method and apparatus for monitoring parts in a material processing system
US6902646B2 (en) * 2003-08-14 2005-06-07 Advanced Energy Industries, Inc. Sensor array for measuring plasma characteristics in plasma processing environments
JP5041713B2 (en) * 2006-03-13 2012-10-03 東京エレクトロン株式会社 Etching method, etching apparatus, and computer-readable storage medium
US8026113B2 (en) * 2006-03-24 2011-09-27 Tokyo Electron Limited Method of monitoring a semiconductor processing system using a wireless sensor network
US20070221125A1 (en) * 2006-03-24 2007-09-27 Tokyo Electron Limited Semiconductor processing system with wireless sensor network monitoring system incorporated therewith
US7829468B2 (en) * 2006-06-07 2010-11-09 Lam Research Corporation Method and apparatus to detect fault conditions of plasma processing reactor
WO2009076568A2 (en) * 2007-12-13 2009-06-18 Lam Research Corporation Plasma unconfinement sensor and methods thereof
US9074285B2 (en) 2007-12-13 2015-07-07 Lam Research Corporation Systems for detecting unconfined-plasma events
US8501631B2 (en) 2009-11-19 2013-08-06 Lam Research Corporation Plasma processing system control based on RF voltage
CN102612864B (en) 2009-11-19 2015-06-10 朗姆研究公司 Method and apparatus for controlling a plasma processing system
US8901935B2 (en) * 2009-11-19 2014-12-02 Lam Research Corporation Methods and apparatus for detecting the confinement state of plasma in a plasma processing system
CN102469675A (en) * 2010-11-05 2012-05-23 北京北方微电子基地设备工艺研究中心有限责任公司 Power matching apparatus and semiconductor equipment
KR101136302B1 (en) * 2010-11-16 2012-04-19 주식회사 케이씨텍 Atomic layer deposition apparatus and method to detect plasma thereof
US9842725B2 (en) 2013-01-31 2017-12-12 Lam Research Corporation Using modeling to determine ion energy associated with a plasma system
US9390893B2 (en) 2012-02-22 2016-07-12 Lam Research Corporation Sub-pulsing during a state
US9295148B2 (en) 2012-12-14 2016-03-22 Lam Research Corporation Computation of statistics for statistical data decimation
US9171699B2 (en) 2012-02-22 2015-10-27 Lam Research Corporation Impedance-based adjustment of power and frequency
US9368329B2 (en) 2012-02-22 2016-06-14 Lam Research Corporation Methods and apparatus for synchronizing RF pulses in a plasma processing system
US10128090B2 (en) 2012-02-22 2018-11-13 Lam Research Corporation RF impedance model based fault detection
US10325759B2 (en) 2012-02-22 2019-06-18 Lam Research Corporation Multiple control modes
US9114666B2 (en) 2012-02-22 2015-08-25 Lam Research Corporation Methods and apparatus for controlling plasma in a plasma processing system
US9462672B2 (en) 2012-02-22 2016-10-04 Lam Research Corporation Adjustment of power and frequency based on three or more states
US9320126B2 (en) 2012-12-17 2016-04-19 Lam Research Corporation Determining a value of a variable on an RF transmission model
US9197196B2 (en) 2012-02-22 2015-11-24 Lam Research Corporation State-based adjustment of power and frequency
US9502216B2 (en) 2013-01-31 2016-11-22 Lam Research Corporation Using modeling to determine wafer bias associated with a plasma system
US10157729B2 (en) 2012-02-22 2018-12-18 Lam Research Corporation Soft pulsing
US9408288B2 (en) 2012-09-14 2016-08-02 Lam Research Corporation Edge ramping
US9779196B2 (en) 2013-01-31 2017-10-03 Lam Research Corporation Segmenting a model within a plasma system
US9620337B2 (en) 2013-01-31 2017-04-11 Lam Research Corporation Determining a malfunctioning device in a plasma system
US9107284B2 (en) 2013-03-13 2015-08-11 Lam Research Corporation Chamber matching using voltage control mode
US9119283B2 (en) 2013-03-14 2015-08-25 Lam Research Corporation Chamber matching for power control mode
US20140360670A1 (en) * 2013-06-05 2014-12-11 Tokyo Electron Limited Processing system for non-ambipolar electron plasma (nep) treatment of a substrate with sheath potential
US9502221B2 (en) 2013-07-26 2016-11-22 Lam Research Corporation Etch rate modeling and use thereof with multiple parameters for in-chamber and chamber-to-chamber matching
EP2881973A1 (en) * 2013-12-04 2015-06-10 Institute of Solid State Physics, University of Latvia Device and method for pvd process diagnostic using X-ray fluorescence local probe
US9594105B2 (en) 2014-01-10 2017-03-14 Lam Research Corporation Cable power loss determination for virtual metrology
US10950421B2 (en) 2014-04-21 2021-03-16 Lam Research Corporation Using modeling for identifying a location of a fault in an RF transmission system for a plasma system
KR20160022458A (en) * 2014-08-19 2016-03-02 삼성전자주식회사 Plasma apparatus and methdo of operating the same
US9536749B2 (en) 2014-12-15 2017-01-03 Lam Research Corporation Ion energy control by RF pulse shape
KR20160120382A (en) 2015-04-07 2016-10-18 삼성전자주식회사 Apparatus for optical emission spectroscopy and apparatus for treating plasma
US10773282B2 (en) * 2016-03-31 2020-09-15 Tokyo Electron Limited Controlling dry etch process characteristics using waferless dry clean optical emission spectroscopy
US10345832B1 (en) * 2018-05-14 2019-07-09 Asm Ip Holding B.V. Insulation system and substrate processing apparatus
CN110049614B (en) * 2019-04-28 2021-12-03 中国科学院微电子研究所 Microwave plasma device and plasma excitation method
KR102053931B1 (en) * 2019-06-07 2019-12-11 주식회사 에스에스티 Eco-friendly semiconductor manufacturing gas processing power reduction system
US20210217588A1 (en) * 2020-01-10 2021-07-15 COMET Technologies USA, Inc. Azimuthal sensor array for radio frequency plasma-based wafer processing systems
KR20210093758A (en) * 2020-01-17 2021-07-28 에이에스엠 아이피 홀딩 비.브이. Substrate treatment apparatus and substrate treatment method for monitoring integrated value
JP7690023B2 (en) * 2020-09-10 2025-06-09 ラム リサーチ コーポレーション SYSTEM AND METHOD FOR ANALYZING AND INTELLIGENTLY COLLECTING SENSOR DATA - Patent application
KR102774682B1 (en) * 2022-07-08 2025-02-27 한국핵융합에너지연구원 Method for monitoring plasma without contact and non-contact plasma monitoring device using the same

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US6352466B1 (en) * 1998-08-31 2002-03-05 Micron Technology, Inc. Method and apparatus for wireless transfer of chemical-mechanical planarization measurements
US20020148307A1 (en) * 2001-03-14 2002-10-17 Jonkers Otto Cornelis Inspection system for process devices for treating substrates, sensor intended for such inspection system, and method for inspecting process devices

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US5556549A (en) * 1994-05-02 1996-09-17 Lsi Logic Corporation Power control and delivery in plasma processing equipment
US6352466B1 (en) * 1998-08-31 2002-03-05 Micron Technology, Inc. Method and apparatus for wireless transfer of chemical-mechanical planarization measurements
US20020148307A1 (en) * 2001-03-14 2002-10-17 Jonkers Otto Cornelis Inspection system for process devices for treating substrates, sensor intended for such inspection system, and method for inspecting process devices

Also Published As

Publication number Publication date
KR20050089995A (en) 2005-09-09
AU2003299437A8 (en) 2004-07-22
US20040127031A1 (en) 2004-07-01
WO2004059689A2 (en) 2004-07-15
EP1579470A2 (en) 2005-09-28
AU2003299437A1 (en) 2004-07-22
CN1720598A (en) 2006-01-11
JP2006512762A (en) 2006-04-13

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