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WO2004044275A3 - Process for removing metallic impurities from silicon carbide coated components of a silicon single crystal pulling apparatus - Google Patents

Process for removing metallic impurities from silicon carbide coated components of a silicon single crystal pulling apparatus Download PDF

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Publication number
WO2004044275A3
WO2004044275A3 PCT/US2003/035798 US0335798W WO2004044275A3 WO 2004044275 A3 WO2004044275 A3 WO 2004044275A3 US 0335798 W US0335798 W US 0335798W WO 2004044275 A3 WO2004044275 A3 WO 2004044275A3
Authority
WO
WIPO (PCT)
Prior art keywords
crystal pulling
pulling apparatus
single crystal
silicon carbide
structural component
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/US2003/035798
Other languages
French (fr)
Other versions
WO2004044275A2 (en
Inventor
Hariprasad Sreedharamurthy
Mohsen Banan
John D Holder
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
SunEdison Inc
Original Assignee
SunEdison Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by SunEdison Inc filed Critical SunEdison Inc
Publication of WO2004044275A2 publication Critical patent/WO2004044275A2/en
Publication of WO2004044275A3 publication Critical patent/WO2004044275A3/en
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/20—Controlling or regulating
    • C30B15/206—Controlling or regulating the thermal history of growing the ingot

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

A process for reconditioning a structural component of a crystal pulling apparatus for reuse therein. The structural component comprises a graphite substrate and a first protect layer of silicon carbide or glassy carbon the substrate, and optionally, a second protective layer comprising silicon covering the first protective layer. During the process, the structural component, while in a treatment chamber, is exposed to an iron-complexing gas comprising a halogen at a temperature and for a duration sufficient to reduce an iron concentration in the structural component.
PCT/US2003/035798 2002-11-12 2003-11-12 Process for removing metallic impurities from silicon carbide coated components of a silicon single crystal pulling apparatus Ceased WO2004044275A2 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US42554702P 2002-11-12 2002-11-12
US60/425,547 2002-11-12

Publications (2)

Publication Number Publication Date
WO2004044275A2 WO2004044275A2 (en) 2004-05-27
WO2004044275A3 true WO2004044275A3 (en) 2004-08-05

Family

ID=32313012

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2003/035798 Ceased WO2004044275A2 (en) 2002-11-12 2003-11-12 Process for removing metallic impurities from silicon carbide coated components of a silicon single crystal pulling apparatus

Country Status (1)

Country Link
WO (1) WO2004044275A2 (en)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
IL128286A (en) 1999-01-29 2004-01-04 Sightline Techn Ltd Propulsion of a probe in the colon using a flexible sleeve
US10184193B2 (en) 2015-05-18 2019-01-22 Globalwafers Co., Ltd. Epitaxy reactor and susceptor system for improved epitaxial wafer flatness
CN113825863B (en) * 2019-05-17 2024-03-22 住友电气工业株式会社 Silicon carbide substrate
CN113106546B (en) * 2021-03-25 2022-05-17 徐州鑫晶半导体科技有限公司 Guide tube for single crystal furnace, single crystal furnace and processing method of guide tube

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4259278A (en) * 1979-07-09 1981-03-31 Ultra Carbon Corporation Method of reshaping warped graphite enclosures and the like
US4725423A (en) * 1985-03-13 1988-02-16 Wacker-Chemitronic Gesellschaft Fur Elektronik-Grundstoffe Mbh Process for the regeneration of shaped carbon bodies
JPH05294789A (en) * 1992-04-20 1993-11-09 Toshiba Corp Method for pulling up silicon crystal
JPH07257987A (en) * 1994-03-16 1995-10-09 Sumitomo Sitix Corp Graphite member for semiconductor single crystal pulling apparatus and semiconductor single crystal pulling apparatus
US5683281A (en) * 1995-02-27 1997-11-04 Hitco Technologies, Inc High purity composite useful as furnace components
US5858486A (en) * 1995-02-27 1999-01-12 Sgl Carbon Composites, Inc. High purity carbon/carbon composite useful as a crucible susceptor

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4259278A (en) * 1979-07-09 1981-03-31 Ultra Carbon Corporation Method of reshaping warped graphite enclosures and the like
US4725423A (en) * 1985-03-13 1988-02-16 Wacker-Chemitronic Gesellschaft Fur Elektronik-Grundstoffe Mbh Process for the regeneration of shaped carbon bodies
JPH05294789A (en) * 1992-04-20 1993-11-09 Toshiba Corp Method for pulling up silicon crystal
JPH07257987A (en) * 1994-03-16 1995-10-09 Sumitomo Sitix Corp Graphite member for semiconductor single crystal pulling apparatus and semiconductor single crystal pulling apparatus
US5683281A (en) * 1995-02-27 1997-11-04 Hitco Technologies, Inc High purity composite useful as furnace components
US5800924A (en) * 1995-02-27 1998-09-01 Sgl Carbon Composites, Inc. High purity composite useful as furnace components
US5858486A (en) * 1995-02-27 1999-01-12 Sgl Carbon Composites, Inc. High purity carbon/carbon composite useful as a crucible susceptor

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
PATENT ABSTRACTS OF JAPAN vol. 018, no. 093 (C - 1166) 16 February 1994 (1994-02-16) *
PATENT ABSTRACTS OF JAPAN vol. 1996, no. 02 29 February 1996 (1996-02-29) *

Also Published As

Publication number Publication date
WO2004044275A2 (en) 2004-05-27

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