WO2004040321A1 - Probe card - Google Patents

Abstract

A probe card being connected electrically with an electronic device, comprising probe pins being connected electrically with the electronic device, a substrate for holding the probe pins, and a section for varying the temperature on the back surface of a surface opposing the electronic device in the direction approaching the temperature on the opposing surface. The probe pin is connected electrically with the electronic device at the other end opposing one end held on the holding substrate and the direction of the probe pin from one end toward the other end may be substantially parallel with the direction from the holding substrate toward the electronic device.

Description

 Description Probe card

Technical field

 The present invention relates to a probe card. In particular, the present invention relates to a probe card to be electrically connected to an electronic device. This application is related to the following Japanese patent application. For those designated countries that are allowed to be incorporated by reference to the literature, the contents described in the following application are incorporated into this application by reference, and are incorporated in the description of this application.

 Patent application 2002—3 1 79 52 Filing date October 31, 2002 Background technology

 Conventionally, a probe card holder has been known in which a heat shield plate is provided to prevent heat convection from a wafer chuck. Further, conventionally, there is known a probe card for preventing a substrate from being deformed due to a difference in thermal expansion coefficient between constituent members by a cooling circuit or a heater for heating. These configurations are disclosed in Japanese Patent Application Laid-Open Nos. 2000-228428 and 2000-241454, which are published patents in Japan.

 However, when a microneedle having high accuracy is used as a probe pin for a high temperature test or a low temperature test, the substrate of the probe card may be bent due to a temperature gradient generated in the substrate. For this reason, conventionally, it has been difficult in some cases to bring the microneedles into contact with the semiconductor wafer with high accuracy.

Therefore, an object of the present invention is to provide a probe card that can solve the above-mentioned problems. This object is achieved by a combination of features described in the independent claims. The dependent claims disclose the _c invention define further advantageous specific examples of the present invention That is, according to the first embodiment of the present invention, there is provided a probe card to be electrically connected to an electronic device, a probe pin to be electrically connected to the electronic device, and a holding substrate for holding the probe pin. A temperature change unit that changes the temperature of the back surface of the holding substrate facing the electronic device on the back surface facing the electronic device in a direction closer to the temperature of the facing surface. The probe pin is electrically connected to the electronic device at the other end with respect to one end held by the holding substrate, and the direction from one end of the probe pin to the other end is substantially parallel to the direction from the holding substrate to the electronic device. May be. Further, at least a part is provided on the back surface side of the facing surface in contact with the back surface of the facing surface, and further includes a high heat conducting member having higher thermal conductivity than the holding substrate, and the temperature changing unit changes the temperature of the high heat conducting member By doing so, the temperature of the back surface of the facing surface may be changed. The high heat conducting member may house the temperature change unit therein. Further, a heat insulating member may be further provided on the back surface side of the facing surface, facing the holding substrate with the high heat conductive member interposed therebetween, and substantially covering the high heat conductive member to insulate the high heat conductive member. .

 The temperature changing unit may change the temperature of the back surface by heating the back surface of the facing surface. The holding substrate holds the probe pins in the vicinity of the center of the opposing surface, and the temperature changing unit heats the back surface of the opposing surface to move the center of the holding substrate away from the electronic device, so that the probe card The device may further include a pressing member that presses the vicinity of the center of the back surface in a direction from the back surface toward the electronic device when the temperature changing unit heats the back surface of the opposing surface.

 The pressing member is formed on the back surface of the opposing surface, a peripheral fixing portion fixed to a peripheral portion of the holding substrate, and formed to extend from the peripheral fixing portion and to be fixed to the peripheral fixing portion, and A central contact portion that contacts the vicinity of the center of the back surface of the facing surface may be provided. The temperature change unit may change the temperature of the back surface of the facing surface to a temperature higher than the temperature of the facing surface.

The probe card is electrically connected to the plurality of electronic devices sequentially, and during a period in which the probe card is not electrically connected to the electronic device, the temperature changing unit electrically connects the back surface of the facing surface to the electronic device. Heat may be applied for a longer period of time. Further, the temperature change unit may change the temperature of the back surface of the opposing surface based on the temperature of the electronic device. Further, a back surface temperature measuring unit for measuring the temperature of the back surface of the facing surface may be further provided, and the temperature changing unit may change the temperature of the back surface of the facing surface based on the temperature measured by the back surface temperature measuring unit. The back surface temperature measuring unit may further measure the temperature of the facing surface, and the temperature changing unit may vary the temperature of the back surface of the facing surface based on a difference between the temperature of the back surface of the facing surface and the temperature of the facing surface. .

 Further, the temperature changing unit may change the temperature of the back surface by cooling the back surface of the facing surface so as to approach the temperature of the facing surface.

 Note that the above summary of the present invention does not enumerate all of the necessary features of the present invention, and a sub-combination of these features may also be an invention. BRIEF DESCRIPTION OF THE FIGURES

 FIG. 1 is a diagram showing a vertical cross-sectional view of the probe card 100.

 FIG. 2 is a diagram showing a horizontal cross-sectional view of the probe card 100.

 FIG. 3 is a view showing a vertical sectional view of the probe card 100. As shown in FIG.

 FIG. 4 is a diagram showing a horizontal sectional view of the probe card 100. As shown in FIG.

 FIG. 5 is a diagram showing still another example of the configuration of the probe card 100. As shown in FIG. FIG. 6 is a diagram showing still another example of the configuration of the probe card 100. As shown in FIG. FIG. 7 is a diagram showing still another example of the configuration of the probe card 100. As shown in FIG. FIG. 8 is a view showing a vertical sectional view of the probe card 100. As shown in FIG.

 FIG. 9 is a diagram showing a horizontal sectional view of the probe card 100. As shown in FIG. BEST MODE FOR CARRYING OUT THE INVENTION

Hereinafter, the present invention will be described through embodiments of the present invention. However, the following embodiments do not limit the invention according to the claims, and all combinations of the features described in the embodiments are the inventions. Is not necessarily essential to the solution of the above. 1 and 2 show an example of the configuration of a probe card 100 according to an embodiment of the present invention. FIG. 1 shows a vertical sectional view of the probe card 100. FIG. 2 shows a horizontal sectional view of the probe card 100. In this example, the probe card 100 is electrically connected to a semiconductor wafer 50 which is an example of an electronic device. The probe card 100 of this example connects a plurality of probe pins 102 to the semiconductor wafer 50 with high accuracy.

 The probe card 100 is supported by the probe card support member 114. Then, the wafer stage 52 moves the semiconductor wafer 50 toward the probe card 100, so that the probe card 100 electrically connects the probe pins 102 to the semiconductor substrate 50. . The probe card 100 includes a plurality of probe pins 102, a probe card substrate 118, a stiffener 108, a plurality of substrate fixing members 112, a heater 212, and a temperature control unit 116. .

 The plurality of probe pins 102 are fixedly provided with respect to the probe card substrate 118, and are electrically connected to signal input / output pads provided on the semiconductor wafer 50, for example. The input / output of signals to / from the semiconductor wafer 50 is performed. The probe pins 102 are electrically connected to the semiconductor wafer 50 at the other end with respect to the one end held by the probe card substrate 118.

 The direction from the one end of the probe pin 102 to the other end is preferably substantially parallel to the direction from the probe card substrate 118 to the semiconductor chip 50. In this case, the probe pins 102 can be provided on the probe card substrate 118 at a high density. In this example, the probe pins 102 are substantially S-shaped minute needles. In another example, the probe pins 102 may be substantially conical bumps. According to the present example, the semiconductor wafer 50 can be tested with high accuracy by reducing the influence of the capacitance of the probe pins and the like on the measurement.

The probe card substrate 118 is a substrate provided above the semiconductor wafer 50 so as to face the semiconductor wafer 50. The probe card substrate 118 is located near the center of the surface facing the semiconductor wafer 50 (hereinafter referred to as the facing surface). Holds multiple probe pins 102. Step The lobe card substrate 1 18 is an example of a holding substrate. In this example, the probe force board 118 has a printed board 104 and a build-up board 106 joined to each other.

 The printed circuit board 104 faces the plurality of probe pins 102 with the build-up board 106 interposed therebetween. Further, the printed circuit board 104 is, for example, a glass epoxy board, and includes a plurality of printed circuit board transmission lines corresponding to the plurality of probe pins 102. The build-up board 106 faces the semiconductor wafer 50 on the back surface of the bonding surface to the printed board 104, and holds the plurality of probe pins 102 on the back surface. The build-up substrate 106 is formed, for example, in a film shape, and is attached to the print substrate 104. The build-up board 106 is, for example, an epoxy board, and includes a plurality of build-up board transmission lines corresponding to the plurality of probe pins 102.

 Here, the minimum wiring interval in the plurality of build-up board transmission lines is smaller than the minimum wiring interval in the plurality of print board transmission lines. Also, the build-up board transmission line electrically connects the corresponding probe pin 102 and the printed board transmission line, respectively.

 The stiffener 108 is an example of a high heat conducting member, and is provided on the probe card substrate 118 in contact with a part of the rear surface of the opposing surface of the probe card substrate 118. The stiffener 108 is fixed to the probe card substrate 118 by a substrate fixing member 112, for example, a screw. Thereby, the stiffener 108 reinforces the probe card substrate 118. In this example, the stiffener 108 is formed of a member having a higher thermal conductivity than the probe card substrate 118, such as a metal, for example.

In addition, the stiffener 108 has a center penetration part 208, an accommodation part 210, and a plurality of peripheral penetration parts 214. The center penetrating portion 208 is a through hole provided substantially perpendicular to the contact surface between the stiffener 108 and the prop card substrate 118 and penetrating the vicinity of the central portion of the stiffener 108. The accommodating part 210 is more peripheral than the center penetrating part 208 Is a groove that is provided to extend in a substantially circumferential shape. The accommodating portion 210 is formed so as to be depressed in a direction toward the inside of the stiffener 108 from the contact surface between the stiffener 108 and the probe card substrate 118. The accommodation section 210 accommodates the heater 212, whereby the stiffener 108 accommodates the heater 212 inside.

 The peripheral penetrating portion 214 is a penetrating hole provided in the outer peripheral portion from the central penetrating portion 208 so as to penetrate substantially perpendicularly to the contact surface between the stiffener 108 and the probe card substrate 118. The probe card 100 includes, for example, a connector (not shown) electrically connected to the print board transmission line in the peripheral penetrating portion 214.

 In this example, the plurality of peripheral through-holes 214 are formed so as to substantially surround the central through-hole 208, and reduce heat flow from the heater 212 to the peripheral portion of the stiffener 108. Further, thereby, the peripheral penetration portion 214 reduces the heat flow from the stiffener 108 to the atmosphere. According to this example, the heat from the heater 212 can be appropriately applied to the probe card substrate 118.

 The heater 212 is, for example, a heating wire wound in a coil shape, and heats the stiffener 108 based on electric power received from the temperature control unit 116. The heater 211 is an example of a temperature changing unit. The heater 2 12 changes the temperature of the stiffener 108 to change the temperature of the back surface of the opposing surface of the probe card substrate 118. In the present example, the heater 2 12 is fixed in, for example, a resin or the like in the accommodating section 210 and is provided so as to extend in a substantially circumferential shape. In this case, the heater 2 12 can heat the stiffener 108 with high efficiency.

 The temperature control section 116 is provided, for example, on the printed circuit board 104 and measures the temperature of the back surface of the opposing surface of the probe card board 118. The temperature control section 1 16 is an example of the back surface temperature measurement section. Further, the temperature control section 116 controls the heater 212 by supplying electric power to the heater 212 based on the measured temperature. As a result, the heater 2 12 changes the temperature of the rear surface of the opposing surface of the probe card substrate 1 18 based on the temperature measured by the temperature controller 1 16.

In addition, the temperature controller 1 16 determines the temperature of the facing surface of the probe card substrate 1 18. May be further measured. In this case, it is preferable that the heater 211 changes the temperature of the back surface of the facing surface based on the difference between the temperature of the back surface of the facing surface and the temperature of the facing surface. In this case, the heater 211 can more appropriately heat the back surface of the facing surface. The temperature controller 1 16 may cause the heater 2 12 to heat the back surface when the difference between the temperature of the back surface of the facing surface and the temperature ′ of the facing surface becomes equal to or greater than a predetermined value. . The temperature controller 1 16 may measure the temperature of the back surface of the facing surface and the temperature of the facing surface using a thermocouple or a resistance thermometer. In this case, the temperature can be measured with high accuracy within 1 degree.

 Here, in this example, the semiconductor substrate 50 is placed on the wafer stage 52 and subjected to a high-temperature test. The wafer stage 52 has a temperature setting section 54. The temperature setting section 54 heats the semiconductor wafer 50 based on the set temperature. Therefore, in this example, the probe card substrate 118 receives the heat from the semiconductor wafer 50 to the opposing surface via the probe pins 102. If the heat received from the semiconductor wafer 50 causes a temperature difference between the facing surface and the back surface of the facing surface, the difference in the amount of thermal expansion between the facing surface and the back surface causes the probe card substrate 118 Warpage occurs, and the distance between each of the plurality of probe pins 102 and the semiconductor wafer 50 varies. In this case, in the probe pin 102 having a small overdrive amount (OD amount), a plurality of probe pins 102 may not be properly connected to the signal input / output pad of the semiconductor wafer 50.

In this example, the heater 211 heats the back surface of the facing surface to change the temperature of the back surface in a direction closer to the temperature of the facing surface. Thus, the heater 211 reduces the magnitude of the temperature gradient in the probe card substrate 118. Further, by this, the heater 2 12 suppresses the deflection of the probe card substrate 1 18 in order to reduce the difference in the amount of thermal expansion between the opposing surface of the probe card substrate 1 18 and the back surface of the opposing surface. be able to. Therefore, according to this example, it is possible to reduce the warpage of the probe card substrate 118 caused when the semiconductor wafer 50 is heated. In addition, this allows the probe pins 102 to be connected to the semiconductor wafer 50 with high accuracy. Note that the heater 2 12 may change the temperature of the back surface of the opposing surface of the probe card substrate 1 18 to a temperature higher than the temperature of the opposing surface. In addition, heater 212 may change the temperature of the back surface of the facing surface based on the temperature of semiconductor wafer 50. In this case, the temperature control unit 116 may supply power to the heater 212 based on the measured temperature of the semiconductor wafer 50 or based on the temperature set in the temperature setting unit 54. Further, ゥ: the stage 52 moves the plurality of semiconductors 50 sequentially under the probe card 100, and the probe card 100 is electrically connected to the plurality of semiconductor wafers 50 sequentially. May be. In this case, during a period in which probe card 100 is not electrically connected to semiconductor wafer 50, heater 211 heats the back surface of the opposing surface more strongly than a period in which probe card 100 is electrically connected to semiconductor wafer 50. It is preferable to do so. In this case, by preventing the temperature of the probe card substrate 118 from dropping during a period in which the probe card 100 is not electrically connected to the semiconductor wafer 50, the heater 2 122 1 1 8 can be efficiently heated. In another example, the semiconductor device 50 may be subjected to a low-temperature test. In this case, the temperature setting section 54 cools the semiconductor wafer 50 based on the set temperature. In this case, the probe card 100 has a cooler such as a Peltier cooler instead of the heater 2 12. The cooler cools the back surface of the facing surface to change the temperature of the back surface in a direction closer to the temperature of the facing surface. Also in this case, the probe pins 102 can be connected to the semiconductor wafer 50 with high accuracy by reducing the warpage of the probe card substrate 118 caused by cooling the semiconductor substrate 50.

Further, the probe card 100 may be provided with both the heater 212 and the cooler. In this case, the warp of the probe card substrate 118 can be reduced in both cases of heating and cooling tests of the semiconductor wafer 50. 3 and 4 show another example of the configuration of the probe card 100. FIG. FIG. 3 shows a vertical sectional view of the probe card 100. Figure 4 shows the horizontal cross section of the probe card 100. FIG.

 In the present example, the heater 212 is a sheet-type heater that substantially surrounds the central through portion 208 on the upper surface of the stiffener 108, and faces the probe card substrate 118 with the stiver 108 interposed therebetween. The heater 2 12 may be bonded to the stiffener 108. Further, in this example, the heater 2 12 has a through hole having a central axis at substantially the same position as the central axis of the central through portion 208. The through hole of the heater 212 has substantially the same size as the central through portion 208.

In this example, the probe card 100 further includes a heat insulating member 402. The heat insulating member 402 is provided on the rear surface side of the opposing surface so as to face the probe card substrate 118 with the stiffener 108 interposed therebetween. The heat insulating member 402 insulates the stiffener 108 by substantially covering the stiffener 108. In this case, the heater 212 can heat the stiffener 108 and the probe card substrate 118 with high efficiency. Further, in this case, by covering the heater 2 12 with the heat insulating member 402, it is possible to prevent a user or the like of the probe card 100 from accidentally contacting the heater ₂ 12.

3 and FIG. 4 have the same or similar functions as those in FIG. 1 or FIG. 2 and therefore will not be described. According to this example, it is possible to reduce the warpage of the probe force substrate 118 generated when the semiconductor wafer 50 is heated. In another example, the probe card 100 may have a cooler having substantially the same shape as that of the heater 2 12 instead of the heater 2 12. FIG. 5 shows still another example of the configuration of the probe card 100. In this example, the heater 212 is, for example, a sheet-type heater, and is disposed on the probe card substrate 118 inside the central through-hole portion 208. According to this example, the warpage of the probe card substrate 118 caused when the semiconductor wafer 50 is heated can be reduced. Further, in this example, the heat insulating member 402 is provided on the upper surface of the stiffener 108 so as to substantially cover the opening of the central through portion 208. In this case, the heat insulating member 402 insulates the heater 211 by substantially covering the heater 211. It should be noted that the probe card 100 may have a cooler having substantially the same shape as that of the heater 2 12 instead of the heater 2 12. Note that, with regard to the points other than the above, the configuration given the same reference numeral in FIG. 5 as that in FIG. 1 or FIG. 2 has the same or similar function as the configuration in FIG. 1 or FIG. FIG. 6 shows still another example of the configuration of the probe card 100. In this example, the probe card 100 includes a nozzle 404 instead of the heater 212 as a temperature changing unit. The nozzle 404 has one end and the other end outside and inside the center through portion 208, and is provided inside the center through portion 208 so as to extend toward the probe card substrate 118. Then, the nozzle 404 heats the probe card substrate 118 by injecting high-temperature air into the probe card substrate 118. In this example, the nozzle 404 receives high-temperature air from the temperature control unit 116. The temperature control unit 116 may control the amount of high-temperature air supplied to the nozzles 404 based on the temperature of the back surface of the facing surface.

Further, in this example, the heat insulating member 402 has a through hole provided to penetrate in the direction in which the nozzle 404 extends, and the nozzle 404 is made to pass through the through hole by passing the nozzle 404 through the through hole. Hold 4 4. The heat insulating member 402 is preferably screwed to the stiffener 108. According to this example, the warpage of the probe card substrate 118 caused when the semiconductor wafer 50 is heated can be reduced. When the semiconductor wafer 50 is subjected to a low-temperature test, the temperature control unit 116 supplies low-temperature air to the nozzle 404 instead of high-temperature air. Note that, with regard to points other than the above, the configuration in FIG. 6 denoted by the same reference numeral as in FIG. 1 or FIG. 2 has the same or similar function as the configuration in FIG. 1 or FIG. FIG. 7 shows still another example of the configuration of the probe card 100. In this example, the heater 2 12 is, for example, a hot plate, and is provided so as to substantially cover the opening of the central through portion 208. In this case, the heaters 212 supply heat to the probe card substrate 118 using the air or the like in the center penetration portion 208 as a medium. According to this example, it is possible to reduce the warpage of the probe card substrate 118 caused when the semiconductor substrate 50 is heated. It should be noted that the probe card 100 may have a cooler having substantially the same shape as the heater 212 in place of the heater 212. Note that, with regard to points other than the above, the configuration in FIG. 7 denoted by the same reference numeral as in FIG. 1 or FIG. 2 has the same or similar function as the configuration in FIG. 1 or FIG. 8 and 9 show still another example of the configuration of the probe card 100. FIG. FIG. 8 shows a vertical sectional view of the probe card 100. FIG. 9 shows a horizontal sectional view of the probe card 100. 8 and 9, the configurations denoted by the same reference numerals as those in FIG. 1 or FIG. 2 have the same or similar functions as / to the configurations in FIG. 1 or FIG. In this example, the probe card 100 further includes a pressing member 110. The pressing member 110 has a peripheral fixing part 302 and a center contact part 304. The peripheral fixing portion 302 is provided on the stiffener 108 so as to face the probe card substrate 118 with the stiffener 108 interposed therebetween, and substantially covers the upper surface of the stiffener 108. In addition, the peripheral fixing portion 302 is integrated with the stiffener 108 and the probe card substrate 118 by a plurality of substrate fixing members 112 on the outer peripheral portion from the center penetrating portion 208 of the stiffener 108. Fixed to As a result, the peripheral fixing portion 302 is fixed to the peripheral portion of the probe card substrate 118 on the back surface of the opposing surface of the probe card substrate 118.

The center contact portion 304 extends from the peripheral fixing portion 302 and is fixed to the peripheral fixing portion 302 inside the center penetrating portion 208. Further, the peripheral fixing portion 302 comes into contact with the vicinity of the center of the rear surface of the opposing surface of the probe card substrate 118 inside the center penetrating portion 208. Here, the heater 2 1 2 changes the degree of warpage of the probe card substrate 1 18 by heating the back surface of the opposing surface of the probe card substrate 1 18, and the center of the probe card substrate 1 18 is heated. The part is moved in a direction away from the semiconductor wafer 50. As a result, the heater 2 12 reduces warpage of the probe card substrate 1 18 due to heat from the semiconductor wafer 50.

 Therefore, when the heater 211 heats the back surface of the facing surface, the center contact portion 304 presses the vicinity of the center on the back surface in a direction from the back surface to the electronic device. Accordingly, the pressing member 110 prevents the probe card substrate 118 from being warped in the opposite direction to the warpage due to heat from the semiconductor wafer 50 due to the heating of the heater 212.

 In addition, the heater 211 heats the back surface of the opposing surface of the probe card substrate 118 so as to generate a stress in the probe card substrate 118 so that the center of the opposing surface is depressed. Is preferred. In this case, the warp of the probe card substrate 118 can be more appropriately reduced or eliminated by the pressing member 110 appropriately pressing the probe card substrate 118. The heater 212 may change the temperature of the back surface of the opposing surface of the probe card substrate 118 to a temperature higher than the temperature of the opposing surface.

 As described above, the present invention has been described using the embodiment, but the technical scope of the present invention is not limited to the scope described in the above embodiment. It is apparent to those skilled in the art that various changes or improvements can be made to the above embodiment. It is apparent from the description of the appended claims that embodiments with such changes or improvements can be included in the technical scope of the present invention.

Claims

The scope of the claims 1. A probe card to be electrically connected to an electronic device, and a probe pin to be electrically connected to the electronic device;  A holding substrate for holding the probe pin,  A temperature changing unit that changes the temperature of the back surface of the opposing surface of the holding substrate that faces the electronic device in a direction closer to the temperature of the opposing surface; A probe card, comprising: 2. The probe pin is electrically connected to the electronic device at the other end with respect to one end held by the holding substrate. _ΎThe direction from the one end of the probe pin toward the other end is from the holding substrate. The probe card according to claim 1, wherein the probe card is substantially parallel to a direction toward the electronic device.  3. At least a part thereof is provided on the back surface side of the facing surface in contact with the back surface of the facing surface, and further includes a high heat conductive member having a higher thermal conductivity than the holding substrate,  2. The probe head according to claim 1, wherein the temperature changing unit changes the temperature of the high thermal conductive member to change the temperature of the back surface of the facing surface.  4. The probe card according to claim 3, wherein the high heat conductive member accommodates the temperature changing unit in a head part.  5. The heat-insulating member is further provided on the back side of the facing surface so as to face the holding substrate with the high-heat conductive member interposed therebetween, and substantially covers the high-heat conductive member to insulate the high-heat conductive member. 4. The probe card according to claim 3, wherein: 6. The probe card according to claim 1, wherein the temperature changing unit changes the temperature of the back surface by heating the back surface of the facing surface. 7. The holding substrate holds the probe pins in the vicinity of a center portion of the facing surface, The temperature changing unit moves a central portion of the holding substrate in a direction away from the electronic device by heating a back surface of the facing surface,  The probe card further includes a pressing member that presses the vicinity of the center of the back surface in a direction from the back surface toward the electronic device when the temperature changing unit heats the back surface of the facing surface. The probe card according to claim 6, wherein  8. The pressing member is  A peripheral fixing portion fixed to a peripheral portion of the holding substrate on a back surface of the facing surface;  A center contact portion extending from the peripheral fixing portion and fixed to the peripheral fixing portion and in contact with the vicinity of the center of the back surface of the facing surface; 8. The probe card according to claim 7, comprising:  9. The probe card according to claim 7, wherein the temperature changing unit changes the temperature of the back surface of the facing surface to a temperature higher than the temperature of the facing surface.  10. The probe card is sequentially and electrically connected to the plurality of electronic devices,  In a period in which the probe card is not electrically connected to the electronic device, the temperature changing unit heats the back surface of the facing surface more strongly than a period in which the probe card is electrically connected to the electronic device. 7. The probe card according to claim 6, wherein:  11. The probe card according to claim 1, wherein the temperature changing unit changes the temperature of the back surface of the facing surface based on the temperature of the electronic device. 12. The apparatus further comprises a back surface temperature measuring unit for measuring the temperature of the back surface of the facing surface, wherein the temperature changing unit changes the temperature of the back surface of the facing surface based on the temperature measured by the back surface temperature measuring unit. The probe force card according to claim 1, wherein the probe force is adjusted. 1 3. The back surface temperature measurement unit further measures the temperature of the opposed surface, The probe according to claim 12, wherein the temperature changing unit changes the temperature of the back surface of the facing surface based on a difference between the temperature of the back surface of the facing surface and the temperature of the facing surface. card.  14. The probe card according to claim 1, wherein the temperature changing section changes the temperature of the rear surface in a direction closer to the temperature of the opposing surface by cooling the rear surface of the opposing surface. .