[go: up one dir, main page]

WO2003034509A1 - Dispositif electroluminescent a semi-conducteur, afficheur d'images, illuminateur et son procede de fabrication - Google Patents

Dispositif electroluminescent a semi-conducteur, afficheur d'images, illuminateur et son procede de fabrication Download PDF

Info

Publication number
WO2003034509A1
WO2003034509A1 PCT/JP2002/009898 JP0209898W WO03034509A1 WO 2003034509 A1 WO2003034509 A1 WO 2003034509A1 JP 0209898 W JP0209898 W JP 0209898W WO 03034509 A1 WO03034509 A1 WO 03034509A1
Authority
WO
WIPO (PCT)
Prior art keywords
light
illuminator
semiconductor light
manufacturing
image display
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2002/009898
Other languages
English (en)
French (fr)
Inventor
Toyoharu Oohata
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to US10/450,096 priority Critical patent/US6963086B2/en
Application filed by Sony Corp filed Critical Sony Corp
Priority to KR1020037007079A priority patent/KR100906722B1/ko
Priority to EP02768078A priority patent/EP1435667A4/en
Publication of WO2003034509A1 publication Critical patent/WO2003034509A1/ja
Anticipated expiration legal-status Critical
Priority to US11/126,552 priority patent/US7459728B2/en
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/831—Electrodes characterised by their shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/032—Manufacture or treatment of electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates
    • H10H20/821—Bodies characterised by their shape, e.g. curved or truncated substrates of the light-emitting regions, e.g. non-planar junctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/857—Interconnections, e.g. lead-frames, bond wires or solder balls

Landscapes

  • Led Devices (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
PCT/JP2002/009898 2001-10-10 2002-09-25 Dispositif electroluminescent a semi-conducteur, afficheur d'images, illuminateur et son procede de fabrication Ceased WO2003034509A1 (fr)

Priority Applications (4)

Application Number Priority Date Filing Date Title
US10/450,096 US6963086B2 (en) 2001-10-10 2001-10-10 Semiconductor light-emitting device image display illuminator and its manufacturing method
KR1020037007079A KR100906722B1 (ko) 2001-10-10 2002-09-25 반도체 발광소자, 화상표시장치 및 조명장치와 그 제조방법
EP02768078A EP1435667A4 (en) 2001-10-10 2002-09-25 LIGHT-EMITTING SEMICONDUCTOR ELEMENT, IMAGE DISPLAY, ILLUMINATOR AND MANUFACTURING METHOD
US11/126,552 US7459728B2 (en) 2001-10-10 2005-05-11 Semiconductor light emitting device, image display system and illumination device

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2001-312207 2001-10-10
JP2001312207A JP3988429B2 (ja) 2001-10-10 2001-10-10 半導体発光素子、画像表示装置及び照明装置とその製造方法

Related Child Applications (2)

Application Number Title Priority Date Filing Date
US10450096 A-371-Of-International 2002-09-25
US11/126,552 Continuation US7459728B2 (en) 2001-10-10 2005-05-11 Semiconductor light emitting device, image display system and illumination device

Publications (1)

Publication Number Publication Date
WO2003034509A1 true WO2003034509A1 (fr) 2003-04-24

Family

ID=19130901

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2002/009898 Ceased WO2003034509A1 (fr) 2001-10-10 2002-09-25 Dispositif electroluminescent a semi-conducteur, afficheur d'images, illuminateur et son procede de fabrication

Country Status (7)

Country Link
US (2) US6963086B2 (ja)
EP (1) EP1435667A4 (ja)
JP (1) JP3988429B2 (ja)
KR (1) KR100906722B1 (ja)
CN (1) CN100416867C (ja)
TW (1) TW564556B (ja)
WO (1) WO2003034509A1 (ja)

Families Citing this family (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3815335B2 (ja) * 2002-01-18 2006-08-30 ソニー株式会社 半導体発光素子及びその製造方法
KR100982309B1 (ko) 2003-11-26 2010-09-17 삼성모바일디스플레이주식회사 발광각도가 넓은 발광다이오드
KR100789200B1 (ko) * 2003-12-05 2008-01-02 쇼와 덴코 가부시키가이샤 반도체 칩 제조 방법 및 반도체 칩
JP5005164B2 (ja) * 2004-03-03 2012-08-22 株式会社ジャパンディスプレイイースト 発光素子，発光型表示装置及び照明装置
JP2005317676A (ja) * 2004-04-27 2005-11-10 Sony Corp 半導体発光素子、半導体発光装置及び半導体発光素子の製造方法
JP4740795B2 (ja) * 2005-05-24 2011-08-03 エルジー エレクトロニクス インコーポレイティド ロッド型発光素子及びその製造方法
KR100649769B1 (ko) * 2005-12-28 2006-11-27 삼성전기주식회사 반도체 발광 다이오드 및 그 제조 방법
TWI288979B (en) * 2006-02-23 2007-10-21 Arima Optoelectronics Corp Light emitting diode bonded with metal diffusion and manufacturing method thereof
US8659039B2 (en) * 2009-02-18 2014-02-25 National Institute Of Advanced Industrial Science And Technology Semiconductor light emitting diode
KR101072200B1 (ko) 2009-03-16 2011-10-10 엘지이노텍 주식회사 발광소자 및 그 제조방법
JP2013093412A (ja) * 2011-10-25 2013-05-16 Showa Denko Kk 発光ダイオード、発光ダイオードの製造方法、発光ダイオードランプ及び照明装置
KR101286210B1 (ko) * 2012-03-12 2013-07-15 고려대학교 산학협력단 발광 소자 및 그 제조 방법
JP6322197B2 (ja) 2012-10-26 2018-05-09 グロ アーベーＧｌｏ Ａｂ ナノワイヤサイズの光電構造及びその選択された部分を改質させる方法。
KR101898680B1 (ko) 2012-11-05 2018-09-13 삼성전자주식회사 나노구조 발광 소자
US20140183579A1 (en) * 2013-01-02 2014-07-03 Japan Science And Technology Agency Miscut semipolar optoelectronic device
KR101554032B1 (ko) * 2013-01-29 2015-09-18 삼성전자주식회사 나노구조 반도체 발광소자
US9099573B2 (en) * 2013-10-31 2015-08-04 Samsung Electronics Co., Ltd. Nano-structure semiconductor light emitting device
KR102255214B1 (ko) 2014-11-13 2021-05-24 삼성전자주식회사 발광 소자
KR102608419B1 (ko) * 2016-07-12 2023-12-01 삼성디스플레이 주식회사 표시장치 및 표시장치의 제조방법
KR102486391B1 (ko) 2017-11-09 2023-01-09 삼성전자주식회사 고해상도 디스플레이 장치
US10796971B2 (en) 2018-08-13 2020-10-06 X Display Company Technology Limited Pressure-activated electrical interconnection with additive repair
JP7616599B2 (ja) * 2021-02-26 2025-01-17 セイコーエプソン株式会社 発光装置およびプロジェクター

Citations (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH058958U (ja) * 1991-07-16 1993-02-05 三洋電機株式会社 発光ダイオード装置
JPH0541536A (ja) * 1991-05-30 1993-02-19 Kyocera Corp 半導体発光装置の製造方法
EP0545262A1 (en) * 1991-12-04 1993-06-09 Eastman Kodak Company Strained quantum well laser diode
JPH0621508A (ja) * 1992-07-03 1994-01-28 A T R Koudenpa Tsushin Kenkyusho:Kk 半導体発光素子
JPH06188450A (ja) * 1992-12-16 1994-07-08 Sharp Corp 発光ダイオード
JPH0738149A (ja) * 1993-07-20 1995-02-07 Sharp Corp 半導体発光素子およびその製造方法
JPH0758359A (ja) * 1993-08-10 1995-03-03 Sharp Corp スーパールミネッセントダイオード素子およびその製造方法
JPH09129974A (ja) * 1995-10-27 1997-05-16 Hitachi Ltd 半導体レーザ素子
GB2326023A (en) * 1997-06-03 1998-12-09 Hewlett Packard Co Semiconductor light-emitting device
JP2001068743A (ja) * 1999-08-30 2001-03-16 Rohm Co Ltd 発光ダイオ−ドチップとその製造方法
JP2001085738A (ja) * 1999-09-10 2001-03-30 Sony Corp 自発光素子およびその製造方法、照明装置、並びに２次元表示装置

Family Cites Families (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4932033A (en) * 1986-09-26 1990-06-05 Canon Kabushiki Kaisha Semiconductor laser having a lateral p-n junction utilizing inclined surface and method of manufacturing same
JPH07105562B2 (ja) * 1988-07-01 1995-11-13 シャープ株式会社 横接合ストライプ型半導体レーザ素子の製造方法
JPH058958A (ja) 1991-07-09 1993-01-19 Hitachi Ltd エレベータ乗り場呼び装置
JPH0645648A (ja) 1992-07-24 1994-02-18 Omron Corp 上面出射型半導体発光素子、ならびに当該発光素子を用いた光学検知装置、光学的情報処理装置及び発光装置。
JPH08102551A (ja) 1994-09-30 1996-04-16 Kyocera Corp 半導体発光装置およびその製造方法
JPH0992881A (ja) 1995-09-21 1997-04-04 Toshiba Corp 化合物半導体装置
JP3298390B2 (ja) 1995-12-11 2002-07-02 日亜化学工業株式会社 窒化物半導体多色発光素子の製造方法
JP2830814B2 (ja) 1996-01-19 1998-12-02 日本電気株式会社 窒化ガリウム系化合物半導体の結晶成長方法、及び半導体レーザの製造方法
JP3270704B2 (ja) 1997-03-10 2002-04-02 日本電信電話株式会社 半導体微小構造体の製造方法
JP3139445B2 (ja) 1997-03-13 2001-02-26 日本電気株式会社 ＧａＮ系半導体の成長方法およびＧａＮ系半導体膜
JP3863962B2 (ja) 1997-03-25 2006-12-27 シャープ株式会社 窒化物系ｉｉｉ−ｖ族化合物半導体発光素子とその製造方法
JPH10265297A (ja) 1997-03-26 1998-10-06 Shiro Sakai ＧａＮバルク単結晶の製造方法
JP3517091B2 (ja) * 1997-07-04 2004-04-05 東芝電子エンジニアリング株式会社 窒化ガリウム系半導体発光素子およびその製造方法
FR2769924B1 (fr) * 1997-10-20 2000-03-10 Centre Nat Rech Scient Procede de realisation d'une couche epitaxiale de nitrure de gallium, couche epitaxiale de nitrure de gallium et composant optoelectronique muni d'une telle couche
JPH11238687A (ja) 1998-02-20 1999-08-31 Ricoh Co Ltd 半導体基板および半導体発光素子
JP4083866B2 (ja) * 1998-04-28 2008-04-30 シャープ株式会社 半導体レーザ素子
JP3196833B2 (ja) 1998-06-23 2001-08-06 日本電気株式会社 Ｉｉｉ−ｖ族化合物半導体の成長方法及びこの方法を用いた半導体発光素子の製造方法
JP2000150391A (ja) 1998-11-11 2000-05-30 Shiro Sakai 集束イオンビームのマスク加工による結晶の選択成長法
US6235850B1 (en) * 1998-12-11 2001-05-22 3M Immovative Properties Company Epoxy/acrylic terpolymer self-fixturing adhesive
JP2001094212A (ja) * 1999-09-24 2001-04-06 Sanyo Electric Co Ltd 半導体素子およびその製造方法
JP3882539B2 (ja) * 2000-07-18 2007-02-21 ソニー株式会社 半導体発光素子およびその製造方法、並びに画像表示装置
JP3906654B2 (ja) * 2000-07-18 2007-04-18 ソニー株式会社 半導体発光素子及び半導体発光装置
JP2004288799A (ja) * 2003-03-20 2004-10-14 Sony Corp 半導体発光素子およびその製造方法、集積型半導体発光装置およびその製造方法、画像表示装置およびその製造方法ならびに照明装置およびその製造方法

Patent Citations (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0541536A (ja) * 1991-05-30 1993-02-19 Kyocera Corp 半導体発光装置の製造方法
JPH058958U (ja) * 1991-07-16 1993-02-05 三洋電機株式会社 発光ダイオード装置
EP0545262A1 (en) * 1991-12-04 1993-06-09 Eastman Kodak Company Strained quantum well laser diode
JPH0621508A (ja) * 1992-07-03 1994-01-28 A T R Koudenpa Tsushin Kenkyusho:Kk 半導体発光素子
JPH06188450A (ja) * 1992-12-16 1994-07-08 Sharp Corp 発光ダイオード
JPH0738149A (ja) * 1993-07-20 1995-02-07 Sharp Corp 半導体発光素子およびその製造方法
JPH0758359A (ja) * 1993-08-10 1995-03-03 Sharp Corp スーパールミネッセントダイオード素子およびその製造方法
JPH09129974A (ja) * 1995-10-27 1997-05-16 Hitachi Ltd 半導体レーザ素子
GB2326023A (en) * 1997-06-03 1998-12-09 Hewlett Packard Co Semiconductor light-emitting device
JP2001068743A (ja) * 1999-08-30 2001-03-16 Rohm Co Ltd 発光ダイオ−ドチップとその製造方法
JP2001085738A (ja) * 1999-09-10 2001-03-30 Sony Corp 自発光素子およびその製造方法、照明装置、並びに２次元表示装置

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
See also references of EP1435667A4 *

Also Published As

Publication number Publication date
EP1435667A4 (en) 2007-04-18
US20040051110A1 (en) 2004-03-18
KR100906722B1 (ko) 2009-07-07
CN100416867C (zh) 2008-09-03
CN1476641A (zh) 2004-02-18
TW564556B (en) 2003-12-01
US20050200794A1 (en) 2005-09-15
KR20040043102A (ko) 2004-05-22
JP3988429B2 (ja) 2007-10-10
US7459728B2 (en) 2008-12-02
EP1435667A1 (en) 2004-07-07
JP2003124512A (ja) 2003-04-25
US6963086B2 (en) 2005-11-08

Similar Documents

Publication Publication Date Title
WO2003034509A1 (fr) Dispositif electroluminescent a semi-conducteur, afficheur d'images, illuminateur et son procede de fabrication
US10417969B2 (en) Organic light-emitting diode (OLED) display panel, driving method thereof and display apparatus
US6867549B2 (en) Color OLED display having repeated patterns of colored light emitting elements
JP4449113B2 (ja) ２次元表示装置
TW200605722A (en) Light emitting display
KR20180119273A (ko) 마이크로 led 디스플레이 장치 및 그 제조방법
GB0107236D0 (en) Method of creating an electroluminescent device
AU2003257713A1 (en) Nitride micro light emitting diode with high brightness and method of manufacturing the same
EP1401034A3 (en) Organic electroluminescent device using optical resonance effect
EP1168448A3 (en) Full color organic EL display panel, manufacturing method thereof and driving circuit thereof
TW200620208A (en) Emission display device
EP2161752A3 (en) Light-emitting device and method of manufacturing the same
TW200516331A (en) Pixel structure in a matrix display and driving method thereof
EP1286397A3 (en) Organic electroluminescence display panel and fabrication method thereof
KR20140083488A (ko) 반도체 발광 소자를 이용한 디스플레이 장치
TW200917458A (en) Surface light source of backlight module in a flat panel display
EP1670293A8 (en) Electroluminescent display device and method of manufacturing the same
KR20110139776A (ko) 컬러 디스플레이, 컬러 이미지 디스플레이 방법
EP1450408A3 (en) Display element array for emissive fixed format display
CN109616491A (zh) 一种显示面板
TW200509010A (en) Color tunable panel of organic electroluminescent displays
WO2004010406A3 (en) Electroluminescent display, electronic device comprising such a display and method of manufacturing an electroluminescent display
TWI413090B (zh) 背光驅動方法以及顯示器
CN110993649A (zh) 一种显示面板及其制备方法、显示装置
US7609238B2 (en) Dual-scan circuit for driving an OLED display device

Legal Events

Date Code Title Description
AK Designated states

Kind code of ref document: A1

Designated state(s): CN KR

AL Designated countries for regional patents

Kind code of ref document: A1

Designated state(s): AT BE BG CH CY CZ DE DK EE ES FR GB GR IE IT LU MC NL PT SE SK TR

WWE Wipo information: entry into national phase

Ref document number: 1020037007079

Country of ref document: KR

WWE Wipo information: entry into national phase

Ref document number: 028031547

Country of ref document: CN

WWE Wipo information: entry into national phase

Ref document number: 2002768078

Country of ref document: EP

121 Ep: the epo has been informed by wipo that ep was designated in this application
WWE Wipo information: entry into national phase

Ref document number: 10450096

Country of ref document: US

WWP Wipo information: published in national office

Ref document number: 1020037007079

Country of ref document: KR

WWP Wipo information: published in national office

Ref document number: 2002768078

Country of ref document: EP