WO2003031991A1 - Nanocapteur tunnel d'oscillations mecaniques et procede de fabrication correspondant - Google Patents
Nanocapteur tunnel d'oscillations mecaniques et procede de fabrication correspondantInfo
- Publication number
- WO2003031991A1 WO2003031991A1 PCT/RU2001/000410 RU0100410W WO03031991A1 WO 2003031991 A1 WO2003031991 A1 WO 2003031991A1 RU 0100410 W RU0100410 W RU 0100410W WO 03031991 A1 WO03031991 A1 WO 03031991A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- προvοdyaτ
- slοya
- blagοροdnοgο
- meτalla
- nanotransducer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Ceased
Links
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N29/00—Investigating or analysing materials by the use of ultrasonic, sonic or infrasonic waves; Visualisation of the interior of objects by transmitting ultrasonic or sonic waves through the object
- G01N29/02—Analysing fluids
- G01N29/022—Fluid sensors based on microsensors, e.g. quartz crystal-microbalance [QCM], surface acoustic wave [SAW] devices, tuning forks, cantilevers, flexural plate wave [FPW] devices
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y15/00—Nanotechnology for interacting, sensing or actuating, e.g. quantum dots as markers in protein assays or molecular motors
Definitions
- the invention is subject to on-line measuring equipment and may be used to measure physical and non-disturbing environments.
- the principle of the operation of the tunneling user is based on the measurement of the tunneling current, which occurs in the gap between the electrically sensitive element and the fixed value.
- the tunnel handler supports the device between the probe and the membrane, - 2 - v ⁇ lyuchayuschee ⁇ l ⁇ nyayuschy ele ⁇ d, vy ⁇ lnenny of sl ⁇ ya blag ⁇ dn ⁇ g ⁇ me ⁇ alla, ⁇ sazhdenn ⁇ g ⁇ v ⁇ u ⁇ z ⁇ nda, usili ⁇ el ⁇ unneln ⁇ g ⁇ ⁇ a, v ⁇ lyu- chenny LKAU sl ⁇ em blag ⁇ dn ⁇ g ⁇ me ⁇ alla, nanesenn ⁇ g ⁇ on z ⁇ nd and ⁇ e ⁇ - vym v ⁇ d ⁇ m anal ⁇ g ⁇ -tsi ⁇ v ⁇ g ⁇ ⁇ e ⁇ b ⁇ az ⁇ va ⁇ elya ( ⁇ TSP).
- the well-known method does not allow to achieve a high accuracy and the efficiency of the small-functional factor.
- the essentials of the invention are inclusive of the fact that the tunnel of the mechanical vibrations is not connected to the systems, but the ⁇ tunnel mechanic - 4 - ⁇ si ⁇ ⁇ lebany, s ⁇ de ⁇ zhaschy chuvs ⁇ vi ⁇ elny elemei ⁇ , vy ⁇ lnenny as z ⁇ nda ⁇ y ⁇ g ⁇ sl ⁇ em blag ⁇ dn ⁇ g ⁇ me ⁇ alla over ⁇ ym with zaz ⁇ - ⁇ m magnitude ⁇ g ⁇ m ⁇ zhe ⁇ izmenya ⁇ sya ⁇ d ⁇ ley nan ⁇ me ⁇ a d ⁇ d ⁇ ley mi ⁇ na, ⁇ as ⁇ l ⁇ zhena g ⁇ i ⁇ vannaya memb ⁇ ana, ⁇ y ⁇ aya s ⁇ s ⁇ ny z ⁇ nda sl ⁇ em blag ⁇ dn ⁇ g ⁇ me ⁇ alla, ⁇ d ⁇ lyuchennym to the source of the
- FIG. 1 a functional-structural tunneling scheme of a mechanical vibration oscillator is shown
- ⁇ a ⁇ ig. 2 is a schematic diagram of the performance of a tunneling device for mechanical vibrations, explaining the method of excluding it, for the sake of clarity
- a tuner for mechanical vibrations (Figs. 1 and 2) is implemented in the form of a multiple integrated circuit.
- the probe 3 of the sensible element 2 is made from a wide range of silver in the area of the front 1 and is protected by 4 good metal, for example.
- Low-temperature probe 3 is located on the outside of the electric 8, made from a good metal, for example gold. - 8 -
- the tunnel handler for mechanical vibrations works the following way.
- ⁇ is ⁇ dn ⁇ m s ⁇ stoyanii, ⁇ sle power
- the ⁇ dachi, na ⁇ yazhenie on ⁇ - ⁇ sl ⁇ nyayuschem ele ⁇ de 8 us ⁇ ys ⁇ va 7 u ⁇ avleniya zaz ⁇ m z ⁇ nd ⁇ m between 3 and 5 memb ⁇ an ⁇ y ⁇ avn ⁇ zero, ⁇ ezul ⁇ a ⁇ e cheg ⁇ zaz ⁇ 16 sl ⁇ yami me ⁇ allizatsii between 4 and 6 z ⁇ nda 3 and 5 memb ⁇ any chuvs ⁇ vi ⁇ eln ⁇ g ⁇ elemen ⁇ a 2 d ⁇ s ⁇ a ⁇ chn ⁇ for veli ⁇ Then, you can run a tunnel tunnel.
- the measurement of the tunneling current is more informative than the path of measuring the electric capacitance.
- the tuner for mechanical vibrations has an excellent sensitivity of 10 5 to 10 8 ⁇ / ⁇ , with a frequency range of more than 150, which is close to 150 - 12 - for operation, a wide temperature range of -60 ° ⁇ to + 60 ° ⁇ is provided, which ensures the wide range of applications.
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- General Health & Medical Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- Nanotechnology (AREA)
- Physics & Mathematics (AREA)
- Health & Medical Sciences (AREA)
- Biochemistry (AREA)
- General Physics & Mathematics (AREA)
- Molecular Biology (AREA)
- Pathology (AREA)
- Immunology (AREA)
- Analytical Chemistry (AREA)
- Crystallography & Structural Chemistry (AREA)
- Acoustics & Sound (AREA)
- Nitrogen And Oxygen Or Sulfur-Condensed Heterocyclic Ring Systems (AREA)
- Measurement Of Length, Angles, Or The Like Using Electric Or Magnetic Means (AREA)
- Micromachines (AREA)
Abstract
Le nanocapteur tunnel d'oscillations mécaniques appartient au domaine des microsystèmes utilisés dans les équipements de contrôle et de mesure. Le nanocapteur comprend un élément sensible se présentant comme une sonde en silicium monocristallin recouverte d'une couche de métal noble. Sous la sonde, on a disposé avec un intervalle compris entre plusieurs fractions de nanomètre et plusieurs fractions de micromètre une membrane en silicium polycristallin, ondulée sur les bords et recouverte du côté de la sonde d'une couche de métal noble. La sonde est branchée sur une source de tension d'entrée. Le nanocapteur comprend également un dispositif de régulation de l'intervalle, une électrode de déviation disposée autour de la sonde, ladite électrode étant faite d'un métal noble, un amplificateur de courant tunnel et un dispositif limitateur de courant tunnel. Le procédé de fabrication du nanocapteur tunnel est basé sur des méthodes de la technologie à semi-conducteurs planaires.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| PCT/RU2001/000410 WO2003031991A1 (fr) | 2001-10-11 | 2001-10-11 | Nanocapteur tunnel d'oscillations mecaniques et procede de fabrication correspondant |
| RU2002106452/28A RU2212671C1 (ru) | 2001-10-11 | 2001-10-11 | Туннельный нанодатчик механических колебаний и способ его изготовления |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| PCT/RU2001/000410 WO2003031991A1 (fr) | 2001-10-11 | 2001-10-11 | Nanocapteur tunnel d'oscillations mecaniques et procede de fabrication correspondant |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| WO2003031991A1 true WO2003031991A1 (fr) | 2003-04-17 |
Family
ID=20129655
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| PCT/RU2001/000410 Ceased WO2003031991A1 (fr) | 2001-10-11 | 2001-10-11 | Nanocapteur tunnel d'oscillations mecaniques et procede de fabrication correspondant |
Country Status (2)
| Country | Link |
|---|---|
| RU (1) | RU2212671C1 (fr) |
| WO (1) | WO2003031991A1 (fr) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US10194463B2 (en) | 2004-07-21 | 2019-01-29 | Qualcomm Incorporated | Efficient signaling over access channel |
Families Citing this family (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| RU2362221C1 (ru) * | 2007-10-31 | 2009-07-20 | Федеральное государственное унитарное предприятие "Ордена Трудового Красного Знамени Научно-исследовательский физико-химический институт имени Л.Я. Карпова" | Туннельный наносенсор механических колебаний и способ его изготовления |
| RU2391673C2 (ru) * | 2008-06-30 | 2010-06-10 | Государственное образовательное учреждение высшего профессионального образования "Санкт-Петербургский государственный университет Аэрокосмического приборостроения" | Наноэлектромеханический датчик ускорения |
| RU2388682C1 (ru) * | 2008-10-14 | 2010-05-10 | Федеральное государственное унитарное предприятие "Ордена Трудового Красного Знамени Научно-исследовательский физико-химический институт имени Л.Я. Карпова" | Способ изготовления туннельного сенсора механических колебаний |
| US10424712B2 (en) | 2013-01-18 | 2019-09-24 | Yale University | Methods for making a superconducting device with at least one enclosure |
| CA2898598C (fr) | 2013-01-18 | 2023-01-03 | Yale University | Dispositif supraconducteur ayant au moins une enveloppe |
| EP3058618B1 (fr) | 2013-10-15 | 2020-09-02 | Yale University | Amplificateur directionnel à faible bruit fondé sur jonction de josephson |
| US9948254B2 (en) | 2014-02-21 | 2018-04-17 | Yale University | Wireless Josephson bifurcation amplifier |
| EP3262762B1 (fr) | 2015-02-27 | 2021-11-10 | Yale University | Circulateurs à base de jonction josephson et systèmes et procédés associés |
| CA2977968C (fr) | 2015-02-27 | 2023-10-17 | Yale University | Techniques de production d'amplificateurs quantiques et systemes et procedes associes |
| CA2977662A1 (fr) | 2015-02-27 | 2016-09-01 | Yale University | Techniques de couplage de bits quantiques planaires a des resonateurs non planaires, systemes et procedes associes |
| WO2016168642A1 (fr) | 2015-04-17 | 2016-10-20 | Yale University | Convertisseur paramétrique josephson sans fil |
| HK1258844A1 (zh) | 2016-01-15 | 2019-11-22 | Yale University | 用於操纵双量子位量子态的技术及相关系统和方法 |
| WO2019118442A1 (fr) | 2017-12-11 | 2019-06-20 | Yale University | Élément inductif asymétrique non linéaire supraconducteur et systèmes et procédés associés |
| US11223355B2 (en) | 2018-12-12 | 2022-01-11 | Yale University | Inductively-shunted transmon qubit for superconducting circuits |
| US11791818B2 (en) | 2019-01-17 | 2023-10-17 | Yale University | Josephson nonlinear circuit |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5315247A (en) * | 1987-11-09 | 1994-05-24 | California Institute Of Technology | Method and apparatus for measuring a magnetic field using a deflectable energized loop and a tunneling tip |
| FR2700065A1 (fr) * | 1992-12-28 | 1994-07-01 | Commissariat Energie Atomique | Procédé de fabrication d'accéléromètres utilisant la technologie silicium sur isolant. |
| US5449909A (en) * | 1987-11-09 | 1995-09-12 | California Institute Of Technology | Tunnel effect wave energy detection |
| RU94044849A (ru) * | 1994-12-22 | 1996-04-27 | Л.А. Левин | Электростатический акселерометр с вакуумным туннельным датчиком |
| US5563344A (en) * | 1992-10-28 | 1996-10-08 | California Institute Of Technology | Dual element electron tunneling accelerometer |
| RU2152044C1 (ru) * | 1997-12-22 | 2000-06-27 | Казанский государственный технический университет им. А.Н. Туполева | Датчик параметров механических колебаний |
-
2001
- 2001-10-11 RU RU2002106452/28A patent/RU2212671C1/ru not_active IP Right Cessation
- 2001-10-11 WO PCT/RU2001/000410 patent/WO2003031991A1/fr not_active Ceased
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5315247A (en) * | 1987-11-09 | 1994-05-24 | California Institute Of Technology | Method and apparatus for measuring a magnetic field using a deflectable energized loop and a tunneling tip |
| US5449909A (en) * | 1987-11-09 | 1995-09-12 | California Institute Of Technology | Tunnel effect wave energy detection |
| US5563344A (en) * | 1992-10-28 | 1996-10-08 | California Institute Of Technology | Dual element electron tunneling accelerometer |
| FR2700065A1 (fr) * | 1992-12-28 | 1994-07-01 | Commissariat Energie Atomique | Procédé de fabrication d'accéléromètres utilisant la technologie silicium sur isolant. |
| RU94044849A (ru) * | 1994-12-22 | 1996-04-27 | Л.А. Левин | Электростатический акселерометр с вакуумным туннельным датчиком |
| RU2152044C1 (ru) * | 1997-12-22 | 2000-06-27 | Казанский государственный технический университет им. А.Н. Туполева | Датчик параметров механических колебаний |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US10194463B2 (en) | 2004-07-21 | 2019-01-29 | Qualcomm Incorporated | Efficient signaling over access channel |
| US10237892B2 (en) | 2004-07-21 | 2019-03-19 | Qualcomm Incorporated | Efficient signaling over access channel |
| US10517114B2 (en) | 2004-07-21 | 2019-12-24 | Qualcomm Incorporated | Efficient signaling over access channel |
| US10849156B2 (en) | 2004-07-21 | 2020-11-24 | Qualcomm Incorporated | Efficient signaling over access channel |
| US11039468B2 (en) | 2004-07-21 | 2021-06-15 | Qualcomm Incorporated | Efficient signaling over access channel |
Also Published As
| Publication number | Publication date |
|---|---|
| RU2212671C1 (ru) | 2003-09-20 |
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