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WO2003028110A1 - Semiconductor device - Google Patents

Semiconductor device Download PDF

Info

Publication number
WO2003028110A1
WO2003028110A1 PCT/JP2002/009491 JP0209491W WO03028110A1 WO 2003028110 A1 WO2003028110 A1 WO 2003028110A1 JP 0209491 W JP0209491 W JP 0209491W WO 03028110 A1 WO03028110 A1 WO 03028110A1
Authority
WO
WIPO (PCT)
Prior art keywords
layer
channel layer
type
semiconductor device
undope
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2002/009491
Other languages
English (en)
French (fr)
Inventor
Kenya Yamashita
Makoto Kitabatake
Osamu Kusumoto
Kunimasa Takahashi
Masao Uchida
Ryoko Miyanaga
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP2003531534A priority Critical patent/JP4381807B2/ja
Priority to US10/466,353 priority patent/US6995397B2/en
Priority to EP02765568A priority patent/EP1427021B1/en
Publication of WO2003028110A1 publication Critical patent/WO2003028110A1/ja
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/01—Manufacture or treatment
    • H10D12/031—Manufacture or treatment of IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/63—Vertical IGFETs
    • H10D30/635—Vertical IGFETs having no inversion channels, e.g. vertical accumulation channel FETs [ACCUFET] or normally-on vertical IGFETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/637—Lateral IGFETs having no inversion channels, e.g. buried channel lateral IGFETs, normally-on lateral IGFETs or depletion-mode lateral IGFETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/213—Channel regions of field-effect devices
    • H10D62/221—Channel regions of field-effect devices of FETs
    • H10D62/228—Channel regions of field-effect devices of FETs having delta-doped channels
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/213—Channel regions of field-effect devices
    • H10D62/221—Channel regions of field-effect devices of FETs
    • H10D62/235—Channel regions of field-effect devices of FETs of IGFETs
    • H10D62/314—Channel regions of field-effect devices of FETs of IGFETs having vertical doping variations 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
    • H10D62/832—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge being Group IV materials comprising two or more elements, e.g. SiGe
    • H10D62/8325—Silicon carbide
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/60—Impurity distributions or concentrations
    • H10D62/605—Planar doped, e.g. atomic-plane doped or delta-doped

Landscapes

  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Junction Field-Effect Transistors (AREA)
PCT/JP2002/009491 2001-09-14 2002-09-17 Semiconductor device Ceased WO2003028110A1 (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2003531534A JP4381807B2 (ja) 2001-09-14 2002-09-17 半導体装置
US10/466,353 US6995397B2 (en) 2001-09-14 2002-09-17 Semiconductor device
EP02765568A EP1427021B1 (en) 2001-09-14 2002-09-17 Semiconductor device

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2001278996 2001-09-14
JP2001-278996 2001-09-14

Publications (1)

Publication Number Publication Date
WO2003028110A1 true WO2003028110A1 (en) 2003-04-03

Family

ID=19103268

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2002/009491 Ceased WO2003028110A1 (en) 2001-09-14 2002-09-17 Semiconductor device

Country Status (5)

Country Link
US (1) US6995397B2 (ja)
EP (1) EP1427021B1 (ja)
JP (1) JP4381807B2 (ja)
CN (1) CN1265467C (ja)
WO (1) WO2003028110A1 (ja)

Cited By (4)

* Cited by examiner, † Cited by third party
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US7473929B2 (en) * 2003-07-02 2009-01-06 Panasonic Corporation Semiconductor device and method for fabricating the same
WO2014073127A1 (ja) * 2012-11-09 2014-05-15 パナソニック株式会社 半導体装置及びその製造方法
JPWO2013018580A1 (ja) * 2011-08-01 2015-03-05 株式会社村田製作所 電界効果トランジスタ
WO2020075583A1 (ja) * 2018-10-12 2020-04-16 ソニーセミコンダクタソリューションズ株式会社 半導体装置、固体撮像素子

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JP4469139B2 (ja) * 2003-04-28 2010-05-26 シャープ株式会社 化合物半導体ｆｅｔ
DE602004021975D1 (de) * 2004-09-01 2009-08-20 Cree Sweden Ab Lateraler feldeffekttransistor und seine herstellung mit einer abstandsschicht über und unter der kanalschicht
US7391058B2 (en) 2005-06-27 2008-06-24 General Electric Company Semiconductor devices and methods of making same
WO2008005092A2 (en) 2006-06-29 2008-01-10 Cree, Inc. Silicon carbide switching devices including p-type channels and methods of forming the same
CN101312193B (zh) * 2007-05-21 2011-07-13 中芯国际集成电路制造(上海)有限公司 半导体器件逻辑电路
CN101312187B (zh) * 2007-05-21 2011-07-13 中芯国际集成电路制造(上海)有限公司 半导体器件逻辑电路
US7795691B2 (en) * 2008-01-25 2010-09-14 Cree, Inc. Semiconductor transistor with P type re-grown channel layer
US8421162B2 (en) 2009-09-30 2013-04-16 Suvolta, Inc. Advanced transistors with punch through suppression
US8273617B2 (en) 2009-09-30 2012-09-25 Suvolta, Inc. Electronic devices and systems, and methods for making and using the same
US20110079861A1 (en) * 2009-09-30 2011-04-07 Lucian Shifren Advanced Transistors with Threshold Voltage Set Dopant Structures
JP4796667B2 (ja) * 2009-11-17 2011-10-19 パナソニック株式会社 半導体素子及びその製造方法
US8530286B2 (en) 2010-04-12 2013-09-10 Suvolta, Inc. Low power semiconductor transistor structure and method of fabrication thereof
US8569128B2 (en) 2010-06-21 2013-10-29 Suvolta, Inc. Semiconductor structure and method of fabrication thereof with mixed metal types
US8759872B2 (en) 2010-06-22 2014-06-24 Suvolta, Inc. Transistor with threshold voltage set notch and method of fabrication thereof
CN102598265A (zh) * 2010-10-29 2012-07-18 松下电器产业株式会社 半导体元件
US8404551B2 (en) 2010-12-03 2013-03-26 Suvolta, Inc. Source/drain extension control for advanced transistors
US8461875B1 (en) 2011-02-18 2013-06-11 Suvolta, Inc. Digital circuits having improved transistors, and methods therefor
US8525271B2 (en) 2011-03-03 2013-09-03 Suvolta, Inc. Semiconductor structure with improved channel stack and method for fabrication thereof
US9478616B2 (en) * 2011-03-03 2016-10-25 Cree, Inc. Semiconductor device having high performance channel
US8400219B2 (en) 2011-03-24 2013-03-19 Suvolta, Inc. Analog circuits having improved transistors, and methods therefor
US8748270B1 (en) 2011-03-30 2014-06-10 Suvolta, Inc. Process for manufacturing an improved analog transistor
US8796048B1 (en) 2011-05-11 2014-08-05 Suvolta, Inc. Monitoring and measurement of thin film layers
US8999861B1 (en) 2011-05-11 2015-04-07 Suvolta, Inc. Semiconductor structure with substitutional boron and method for fabrication thereof
US8811068B1 (en) 2011-05-13 2014-08-19 Suvolta, Inc. Integrated circuit devices and methods
US8569156B1 (en) 2011-05-16 2013-10-29 Suvolta, Inc. Reducing or eliminating pre-amorphization in transistor manufacture
US8735987B1 (en) 2011-06-06 2014-05-27 Suvolta, Inc. CMOS gate stack structures and processes
US8995204B2 (en) 2011-06-23 2015-03-31 Suvolta, Inc. Circuit devices and methods having adjustable transistor body bias
US8629016B1 (en) 2011-07-26 2014-01-14 Suvolta, Inc. Multiple transistor types formed in a common epitaxial layer by differential out-diffusion from a doped underlayer
US8748986B1 (en) 2011-08-05 2014-06-10 Suvolta, Inc. Electronic device with controlled threshold voltage
WO2013022753A2 (en) 2011-08-05 2013-02-14 Suvolta, Inc. Semiconductor devices having fin structures and fabrication methods thereof
US8645878B1 (en) 2011-08-23 2014-02-04 Suvolta, Inc. Porting a circuit design from a first semiconductor process to a second semiconductor process
US8614128B1 (en) 2011-08-23 2013-12-24 Suvolta, Inc. CMOS structures and processes based on selective thinning
US8713511B1 (en) 2011-09-16 2014-04-29 Suvolta, Inc. Tools and methods for yield-aware semiconductor manufacturing process target generation
US9236466B1 (en) 2011-10-07 2016-01-12 Mie Fujitsu Semiconductor Limited Analog circuits having improved insulated gate transistors, and methods therefor
US8895327B1 (en) 2011-12-09 2014-11-25 Suvolta, Inc. Tipless transistors, short-tip transistors, and methods and circuits therefor
US8819603B1 (en) 2011-12-15 2014-08-26 Suvolta, Inc. Memory circuits and methods of making and designing the same
US8883600B1 (en) 2011-12-22 2014-11-11 Suvolta, Inc. Transistor having reduced junction leakage and methods of forming thereof
US8599623B1 (en) 2011-12-23 2013-12-03 Suvolta, Inc. Circuits and methods for measuring circuit elements in an integrated circuit device
US8476706B1 (en) 2012-01-04 2013-07-02 International Business Machines Corporation CMOS having a SiC/SiGe alloy stack
US8877619B1 (en) 2012-01-23 2014-11-04 Suvolta, Inc. Process for manufacture of integrated circuits with different channel doping transistor architectures and devices therefrom
US8970289B1 (en) 2012-01-23 2015-03-03 Suvolta, Inc. Circuits and devices for generating bi-directional body bias voltages, and methods therefor
US9093550B1 (en) 2012-01-31 2015-07-28 Mie Fujitsu Semiconductor Limited Integrated circuits having a plurality of high-K metal gate FETs with various combinations of channel foundation structure and gate stack structure and methods of making same
US9406567B1 (en) 2012-02-28 2016-08-02 Mie Fujitsu Semiconductor Limited Method for fabricating multiple transistor devices on a substrate with varying threshold voltages
US8863064B1 (en) 2012-03-23 2014-10-14 Suvolta, Inc. SRAM cell layout structure and devices therefrom
US9299698B2 (en) 2012-06-27 2016-03-29 Mie Fujitsu Semiconductor Limited Semiconductor structure with multiple transistors having various threshold voltages
US8900938B2 (en) 2012-07-02 2014-12-02 Shenzhen China Star Optoelectronics Technology Co., Ltd. Manufacturing method of array substrate, array substrate and LCD device
CN102723310B (zh) * 2012-07-02 2014-05-14 深圳市华星光电技术有限公司 一种阵列基板的制作方法、阵列基板和液晶显示装置
US8637955B1 (en) 2012-08-31 2014-01-28 Suvolta, Inc. Semiconductor structure with reduced junction leakage and method of fabrication thereof
US9112057B1 (en) * 2012-09-18 2015-08-18 Mie Fujitsu Semiconductor Limited Semiconductor devices with dopant migration suppression and method of fabrication thereof
US9041126B2 (en) 2012-09-21 2015-05-26 Mie Fujitsu Semiconductor Limited Deeply depleted MOS transistors having a screening layer and methods thereof
US9431068B2 (en) 2012-10-31 2016-08-30 Mie Fujitsu Semiconductor Limited Dynamic random access memory (DRAM) with low variation transistor peripheral circuits
US8816754B1 (en) 2012-11-02 2014-08-26 Suvolta, Inc. Body bias circuits and methods
US9093997B1 (en) 2012-11-15 2015-07-28 Mie Fujitsu Semiconductor Limited Slew based process and bias monitors and related methods
US9123798B2 (en) * 2012-12-12 2015-09-01 General Electric Company Insulating gate field effect transistor device and method for providing the same
US9070477B1 (en) 2012-12-12 2015-06-30 Mie Fujitsu Semiconductor Limited Bit interleaved low voltage static random access memory (SRAM) and related methods
US9112484B1 (en) 2012-12-20 2015-08-18 Mie Fujitsu Semiconductor Limited Integrated circuit process and bias monitors and related methods
US9268885B1 (en) 2013-02-28 2016-02-23 Mie Fujitsu Semiconductor Limited Integrated circuit device methods and models with predicted device metric variations
US8933528B2 (en) * 2013-03-11 2015-01-13 International Business Machines Corporation Semiconductor fin isolation by a well trapping fin portion
US9299801B1 (en) 2013-03-14 2016-03-29 Mie Fujitsu Semiconductor Limited Method for fabricating a transistor device with a tuned dopant profile
US9478571B1 (en) 2013-05-24 2016-10-25 Mie Fujitsu Semiconductor Limited Buried channel deeply depleted channel transistor
US9710006B2 (en) 2014-07-25 2017-07-18 Mie Fujitsu Semiconductor Limited Power up body bias circuits and methods
US9319013B2 (en) 2014-08-19 2016-04-19 Mie Fujitsu Semiconductor Limited Operational amplifier input offset correction with transistor threshold voltage adjustment
KR102316220B1 (ko) 2014-11-14 2021-10-26 삼성전자주식회사 반도체 장치 및 그 제조 방법
JP6950714B2 (ja) * 2019-01-21 2021-10-13 株式会社デンソー 半導体装置

Citations (4)

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Publication number Priority date Publication date Assignee Title
EP0921575A2 (en) * 1997-12-03 1999-06-09 Matsushita Electric Industrial Co., Ltd. Semiconductor device comprising a heterostructure MIS field-effect transistor having a strained channel layer
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Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7473929B2 (en) * 2003-07-02 2009-01-06 Panasonic Corporation Semiconductor device and method for fabricating the same
US7846828B2 (en) 2003-07-02 2010-12-07 Panasonic Corporation Semiconductor device and method for fabricating the same
JPWO2013018580A1 (ja) * 2011-08-01 2015-03-05 株式会社村田製作所 電界効果トランジスタ
US9099341B2 (en) 2011-08-01 2015-08-04 Murata Manufacturing Co., Ltd. Field effect transistor
WO2014073127A1 (ja) * 2012-11-09 2014-05-15 パナソニック株式会社 半導体装置及びその製造方法
JP5526291B1 (ja) * 2012-11-09 2014-06-18 パナソニック株式会社 半導体装置及びその製造方法
US8847238B2 (en) 2012-11-09 2014-09-30 Panasonic Corporation Semiconductor device which can withstand high voltage or high current and method for fabricating the same
WO2020075583A1 (ja) * 2018-10-12 2020-04-16 ソニーセミコンダクタソリューションズ株式会社 半導体装置、固体撮像素子
JPWO2020075583A1 (ja) * 2018-10-12 2021-09-02 ソニーセミコンダクタソリューションズ株式会社 半導体装置、固体撮像素子
JP7361708B2 (ja) 2018-10-12 2023-10-16 ソニーセミコンダクタソリューションズ株式会社 半導体装置、固体撮像素子
US12243884B2 (en) 2018-10-12 2025-03-04 Sony Semiconductor Solutions Corporation Semiconductor device and solid-state imaging sensor

Also Published As

Publication number Publication date
CN1265467C (zh) 2006-07-19
EP1427021B1 (en) 2011-08-31
US6995397B2 (en) 2006-02-07
US20040051104A1 (en) 2004-03-18
JPWO2003028110A1 (ja) 2005-01-13
CN1484862A (zh) 2004-03-24
EP1427021A4 (en) 2008-12-03
EP1427021A1 (en) 2004-06-09
JP4381807B2 (ja) 2009-12-09

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