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WO2003009365A1 - Procede de fabrication d'une plaquette en silicium, d'une plaquette epitaxiale en silicium, et plaquette epitaxiale en silicium - Google Patents

Procede de fabrication d'une plaquette en silicium, d'une plaquette epitaxiale en silicium, et plaquette epitaxiale en silicium Download PDF

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Publication number
WO2003009365A1
WO2003009365A1 PCT/JP2002/005000 JP0205000W WO03009365A1 WO 2003009365 A1 WO2003009365 A1 WO 2003009365A1 JP 0205000 W JP0205000 W JP 0205000W WO 03009365 A1 WO03009365 A1 WO 03009365A1
Authority
WO
WIPO (PCT)
Prior art keywords
silicon
wafer manufacturing
epitaxial wafer
silicon epitaxial
silicon wafer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2002/005000
Other languages
English (en)
French (fr)
Inventor
Hiroshi Takeno
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shin Etsu Handotai Co Ltd
Original Assignee
Shin Etsu Handotai Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shin Etsu Handotai Co Ltd filed Critical Shin Etsu Handotai Co Ltd
Priority to JP2003514610A priority Critical patent/JP4473571B2/ja
Priority to KR1020037001055A priority patent/KR100881511B1/ko
Priority to EP02726467A priority patent/EP1406294A4/en
Priority to US10/482,843 priority patent/US7033962B2/en
Publication of WO2003009365A1 publication Critical patent/WO2003009365A1/ja
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/322—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/322—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections
    • H01L21/3221—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections of silicon bodies, e.g. for gettering
    • H01L21/3225—Thermally inducing defects using oxygen present in the silicon body for intrinsic gettering

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
PCT/JP2002/005000 2001-07-10 2002-05-23 Procede de fabrication d'une plaquette en silicium, d'une plaquette epitaxiale en silicium, et plaquette epitaxiale en silicium Ceased WO2003009365A1 (fr)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2003514610A JP4473571B2 (ja) 2001-07-10 2002-05-23 シリコンウェーハの製造方法
KR1020037001055A KR100881511B1 (ko) 2001-07-10 2002-05-23 실리콘웨이퍼의 제조방법, 실리콘 에피텍셜 웨이퍼의제조방법 및 실리콘 에피텍셜 웨이퍼
EP02726467A EP1406294A4 (en) 2001-07-10 2002-05-23 PROCESS FOR PRODUCING SILICON WAFER, EPITAXIAL SILICON WAFER, AND EPITAXIAL SILICON WAFER
US10/482,843 US7033962B2 (en) 2001-07-10 2002-05-30 Methods for manufacturing silicon wafer and silicone epitaxial wafer, and silicon epitaxial wafer

Applications Claiming Priority (8)

Application Number Priority Date Filing Date Title
JP2001-209160 2001-07-10
JP2001209160 2001-07-10
JP2001-296743 2001-09-27
JP2001-296745 2001-09-27
JP2001296745 2001-09-27
JP2001-296744 2001-09-27
JP2001296744 2001-09-27
JP2001296743 2001-09-27

Publications (1)

Publication Number Publication Date
WO2003009365A1 true WO2003009365A1 (fr) 2003-01-30

Family

ID=27482417

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2002/005000 Ceased WO2003009365A1 (fr) 2001-07-10 2002-05-23 Procede de fabrication d'une plaquette en silicium, d'une plaquette epitaxiale en silicium, et plaquette epitaxiale en silicium

Country Status (6)

Country Link
US (2) US7033962B2 (ja)
EP (4) EP1983561A2 (ja)
JP (1) JP4473571B2 (ja)
KR (1) KR100881511B1 (ja)
TW (1) TWI245084B (ja)
WO (1) WO2003009365A1 (ja)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005051040A (ja) * 2003-07-29 2005-02-24 Matsushita Electric Ind Co Ltd 半導体装置の製造方法及び半導体基板
JP2005286282A (ja) * 2004-03-01 2005-10-13 Sumco Corp Ｓｉｍｏｘ基板の製造方法及び該方法により得られるｓｉｍｏｘ基板
WO2008038786A1 (en) * 2006-09-29 2008-04-03 Sumco Techxiv Corporation Silicon wafer heat treatment method
JP2010064953A (ja) * 2008-09-10 2010-03-25 Siltronic Ag 単結晶シリコンからなる半導体ウェハ及びその製造方法
JP2012039117A (ja) * 2010-08-11 2012-02-23 Siltronic Ag シリコンウェハおよびシリコンウェハの製造方法
KR20170013984A (ko) 2014-07-09 2017-02-07 가부시키가이샤 사무코 에피택셜 실리콘 웨이퍼 및 그 제조 방법

Families Citing this family (9)

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US7151975B2 (en) * 2004-02-09 2006-12-19 Macronix International Co., Ltd. System and method for monitoring wafer furnace production efficiency
CA2568002A1 (en) * 2004-06-24 2006-01-05 Beneq Oy Method for doping material and doped material
JP4868880B2 (ja) * 2006-02-15 2012-02-01 富士通株式会社 シリコンウェーハの処理方法及びウェーハ処理装置
US8987115B2 (en) * 2008-08-21 2015-03-24 Alliance For Sustainable Energy, Llc Epitaxial growth of silicon for layer transfer
KR101389058B1 (ko) * 2009-03-25 2014-04-28 가부시키가이샤 사무코 실리콘 웨이퍼 및 그 제조방법
US8357939B2 (en) * 2009-12-29 2013-01-22 Siltronic Ag Silicon wafer and production method therefor
US20150132931A1 (en) * 2013-07-01 2015-05-14 Solexel, Inc. High-throughput thermal processing methods for producing high-efficiency crystalline silicon solar cells
US10249493B2 (en) 2015-12-30 2019-04-02 Siltronic Ag Method for depositing a layer on a semiconductor wafer by vapor deposition in a process chamber
EP3229262B1 (en) 2016-04-05 2018-08-15 Siltronic AG Method for the vapour phase etching of a semiconductor wafer for trace metal analysis

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JPS5821829A (ja) * 1981-07-31 1983-02-08 Fujitsu Ltd 半導体装置の製造方法
JPS5887833A (ja) * 1981-11-20 1983-05-25 Hitachi Ltd 半導体装置の製造方法
EP0090320A1 (en) * 1982-03-26 1983-10-05 International Business Machines Corporation A method for tailoring oxygen precipitate particle density and distribution in silicon
JPH03185831A (ja) * 1989-12-15 1991-08-13 Komatsu Denshi Kinzoku Kk 半導体装置の製造方法
JPH04276628A (ja) * 1991-03-05 1992-10-01 Olympus Optical Co Ltd 半導体装置の製造方法
JPH05308076A (ja) * 1992-03-03 1993-11-19 Fujitsu Ltd シリコンウエーハの酸素析出方法
JPH0845946A (ja) * 1994-08-01 1996-02-16 Hitachi Ltd シリコン半導体単結晶基板の熱処理方法及び熱処理装置、半導体装置
JPH0897220A (ja) * 1994-09-26 1996-04-12 Toshiba Ceramics Co Ltd シリコンエピタキシャルウェーハの製造方法及びシリコンエピタキシャルウェーハ
JPH11297704A (ja) * 1998-04-14 1999-10-29 Sumitomo Metal Ind Ltd 酸素析出物密度の評価方法
US6200872B1 (en) * 1997-09-30 2001-03-13 Fujitsu Limited Semiconductor substrate processing method
JP2001151597A (ja) * 1999-11-26 2001-06-05 Mitsubishi Materials Silicon Corp 点欠陥の凝集体が存在しないシリコンウェーハの製造方法

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EP0098406A1 (en) * 1982-07-06 1984-01-18 Texas Instruments Incorporated Ramped nucleation of solid state phase changes
DK198490D0 (da) * 1990-08-21 1990-08-21 Novo Nordisk As Heterocykliske forbindelser, deres fremstilling og anvendelse
EP0502471A3 (en) * 1991-03-05 1995-10-11 Fujitsu Ltd Intrinsic gettering of a silicon substrate
CA2064486C (en) * 1992-03-31 2001-08-21 Alain Comeau Method of preparing semiconductor wafer with good intrinsic gettering
EP0702221A3 (en) * 1994-09-14 1997-05-21 Delco Electronics Corp Sensor integrated on a chip
US5611855A (en) * 1995-01-31 1997-03-18 Seh America, Inc. Method for manufacturing a calibration wafer having a microdefect-free layer of a precisely predetermined depth
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JP3747123B2 (ja) 1997-11-21 2006-02-22 信越半導体株式会社 結晶欠陥の少ないシリコン単結晶の製造方法及びシリコン単結晶ウエーハ
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Patent Citations (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5821829A (ja) * 1981-07-31 1983-02-08 Fujitsu Ltd 半導体装置の製造方法
JPS5887833A (ja) * 1981-11-20 1983-05-25 Hitachi Ltd 半導体装置の製造方法
EP0090320A1 (en) * 1982-03-26 1983-10-05 International Business Machines Corporation A method for tailoring oxygen precipitate particle density and distribution in silicon
JPH03185831A (ja) * 1989-12-15 1991-08-13 Komatsu Denshi Kinzoku Kk 半導体装置の製造方法
JPH04276628A (ja) * 1991-03-05 1992-10-01 Olympus Optical Co Ltd 半導体装置の製造方法
JPH05308076A (ja) * 1992-03-03 1993-11-19 Fujitsu Ltd シリコンウエーハの酸素析出方法
JPH0845946A (ja) * 1994-08-01 1996-02-16 Hitachi Ltd シリコン半導体単結晶基板の熱処理方法及び熱処理装置、半導体装置
JPH0897220A (ja) * 1994-09-26 1996-04-12 Toshiba Ceramics Co Ltd シリコンエピタキシャルウェーハの製造方法及びシリコンエピタキシャルウェーハ
US6200872B1 (en) * 1997-09-30 2001-03-13 Fujitsu Limited Semiconductor substrate processing method
JPH11297704A (ja) * 1998-04-14 1999-10-29 Sumitomo Metal Ind Ltd 酸素析出物密度の評価方法
JP2001151597A (ja) * 1999-11-26 2001-06-05 Mitsubishi Materials Silicon Corp 点欠陥の凝集体が存在しないシリコンウェーハの製造方法

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AKATSUKA MASANORI ET AL.: "Effect of oxide precipitate size on slip generation in large diameter epitaxial wafers", JAPANESE JOURNAL OF APPLIED PHYSICS, vol. 37, no. 9A, September 1998 (1998-09-01), pages 4663 - 4666, XP002956610 *
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Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005051040A (ja) * 2003-07-29 2005-02-24 Matsushita Electric Ind Co Ltd 半導体装置の製造方法及び半導体基板
US7144829B2 (en) * 2003-07-29 2006-12-05 Matsushita Electric Industrial Co., Ltd. Method for fabricating semiconductor device and semiconductor substrate
CN100369220C (zh) * 2003-07-29 2008-02-13 松下电器产业株式会社 半导体装置的制造方法
JP2005286282A (ja) * 2004-03-01 2005-10-13 Sumco Corp Ｓｉｍｏｘ基板の製造方法及び該方法により得られるｓｉｍｏｘ基板
WO2008038786A1 (en) * 2006-09-29 2008-04-03 Sumco Techxiv Corporation Silicon wafer heat treatment method
JP5275036B2 (ja) * 2006-09-29 2013-08-28 Ｓｕｍｃｏ Ｔｅｃｈｘｉｖ株式会社 シリコンウェーハの熱処理方法
JP2010064953A (ja) * 2008-09-10 2010-03-25 Siltronic Ag 単結晶シリコンからなる半導体ウェハ及びその製造方法
US8398766B2 (en) 2008-09-10 2013-03-19 Siltronic Ag Semiconductor wafer composed of monocrystalline silicon and method for producing it
JP2012039117A (ja) * 2010-08-11 2012-02-23 Siltronic Ag シリコンウェハおよびシリコンウェハの製造方法
KR20170013984A (ko) 2014-07-09 2017-02-07 가부시키가이샤 사무코 에피택셜 실리콘 웨이퍼 및 그 제조 방법
US10192754B2 (en) 2014-07-09 2019-01-29 Sumco Corporation Epitaxial silicon wafer and method for producing the epitaxial silicon wafer

Also Published As

Publication number Publication date
JPWO2003009365A1 (ja) 2004-11-11
EP1406294A4 (en) 2007-09-12
KR20030051602A (ko) 2003-06-25
US20060130736A1 (en) 2006-06-22
EP1406294A1 (en) 2004-04-07
JP4473571B2 (ja) 2010-06-02
EP1983560A2 (en) 2008-10-22
US7033962B2 (en) 2006-04-25
EP1983561A2 (en) 2008-10-22
TWI245084B (en) 2005-12-11
EP1983562A2 (en) 2008-10-22
US20040171234A1 (en) 2004-09-02
KR100881511B1 (ko) 2009-02-05

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