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WO2003008139A3 - Procede de gravure par attaque chimique pour le micro-usinage de materiaux cristallins et dispositifs ainsi fabriques - Google Patents

Procede de gravure par attaque chimique pour le micro-usinage de materiaux cristallins et dispositifs ainsi fabriques Download PDF

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Publication number
WO2003008139A3
WO2003008139A3 PCT/US2002/023177 US0223177W WO03008139A3 WO 2003008139 A3 WO2003008139 A3 WO 2003008139A3 US 0223177 W US0223177 W US 0223177W WO 03008139 A3 WO03008139 A3 WO 03008139A3
Authority
WO
WIPO (PCT)
Prior art keywords
micromachining
etching process
crystalline materials
devices fabricated
fabricated
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/US2002/023177
Other languages
English (en)
Other versions
WO2003008139A2 (fr
Inventor
Dan A Steinberg
Larry J Rasnake
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
DuPont Electronic Materials International LLC
Original Assignee
Shipley Co LLC
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US10/071,261 external-priority patent/US6885786B2/en
Application filed by Shipley Co LLC filed Critical Shipley Co LLC
Priority to KR10-2004-7000893A priority Critical patent/KR20040017339A/ko
Priority to JP2003513732A priority patent/JP2004535304A/ja
Priority to AU2002322561A priority patent/AU2002322561A1/en
Priority to EP02756559A priority patent/EP1414609A4/fr
Publication of WO2003008139A2 publication Critical patent/WO2003008139A2/fr
Publication of WO2003008139A3 publication Critical patent/WO2003008139A3/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/24—Coupling light guides
    • G02B6/42—Coupling light guides with opto-electronic elements
    • G02B6/4201—Packages, e.g. shape, construction, internal or external details
    • G02B6/4204—Packages, e.g. shape, construction, internal or external details the coupling comprising intermediate optical elements, e.g. lenses, holograms
    • G02B6/4206—Optical features
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
    • G02B2006/12166—Manufacturing methods
    • G02B2006/12176—Etching
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/24—Coupling light guides
    • G02B6/42—Coupling light guides with opto-electronic elements
    • G02B6/4201—Packages, e.g. shape, construction, internal or external details
    • G02B6/4219—Mechanical fixtures for holding or positioning the elements relative to each other in the couplings; Alignment methods for the elements, e.g. measuring or observing methods especially used therefor
    • G02B6/4234—Passive alignment along the optical axis and active alignment perpendicular to the optical axis
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30604—Chemical etching
    • H01L21/30608—Anisotropic liquid etching

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • Optics & Photonics (AREA)
  • Optical Couplings Of Light Guides (AREA)
  • Micromachines (AREA)
  • Manufacturing Optical Record Carriers (AREA)
  • Optical Integrated Circuits (AREA)
  • Diffracting Gratings Or Hologram Optical Elements (AREA)

Abstract

La présente invention concerne un micro-banc optique présentant des structures d'intersection gravées par attaque chimique dans un substrat. En particulier, les micro-bancs selon la présente invention comprennent des structures présentant des surfaces planaires formées le long de plans cristallographiques sélectionnés d'un substrat cristallin unique. Deux des structures formées sont une piqûre d'arrêt de corrosion et un élément gravé par attaque chimique anisotropique disposé de manière adjacente à la piqûre d'arrêt de corrosion. Au niveau du point d'intersection entre la piqûre d'arrêt de corrosion et l'élément gravé par attaque chimique anisotropique, l'orientation des plans cristallographiques est conservée. La présente invention concerne également un procédé de micro-usinage d'un substrat pour former un micro-banc optique. Ledit procédé consiste à former une piqûre d'arrêt de corrosion et à former un élément gravé par attaque chimique anisotropique adjacent à la piqûre d'arrêt de corrosion. Ledit procédé peut également consister à enduire les surfaces de la piqûre d'arrêt de corrosion à l'aide d'une couche d'arrêt de corrosion.
PCT/US2002/023177 2001-07-19 2002-07-19 Procede de gravure par attaque chimique pour le micro-usinage de materiaux cristallins et dispositifs ainsi fabriques Ceased WO2003008139A2 (fr)

Priority Applications (4)

Application Number Priority Date Filing Date Title
KR10-2004-7000893A KR20040017339A (ko) 2001-07-19 2002-07-19 결정성 재료 미세 기계 가공을 위한 에칭 방법 및 그에의하여 제조된 장치
JP2003513732A JP2004535304A (ja) 2001-07-19 2002-07-19 結晶性物質のマイクロマシニングのためのエッチングプロセスおよびそれによって製造されるデバイス
AU2002322561A AU2002322561A1 (en) 2001-07-19 2002-07-19 Etching process for micromachining crystalline materials and devices fabricated thereby
EP02756559A EP1414609A4 (fr) 2001-07-19 2002-07-19 Procede de gravure par attaque chimique pour le micro-usinage de materiaux cristallins et dispositifs ainsi fabriques

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US30656801P 2001-07-19 2001-07-19
US60/306,568 2001-07-19
US10/071,261 2002-02-07
US10/071,261 US6885786B2 (en) 2001-02-07 2002-02-07 Combined wet and dry etching process for micromachining of crystalline materials

Publications (2)

Publication Number Publication Date
WO2003008139A2 WO2003008139A2 (fr) 2003-01-30
WO2003008139A3 true WO2003008139A3 (fr) 2003-11-27

Family

ID=26752026

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2002/023177 Ceased WO2003008139A2 (fr) 2001-07-19 2002-07-19 Procede de gravure par attaque chimique pour le micro-usinage de materiaux cristallins et dispositifs ainsi fabriques

Country Status (6)

Country Link
EP (1) EP1414609A4 (fr)
JP (1) JP2004535304A (fr)
KR (1) KR20040017339A (fr)
CN (1) CN1545732A (fr)
AU (1) AU2002322561A1 (fr)
WO (1) WO2003008139A2 (fr)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6907150B2 (en) 2001-02-07 2005-06-14 Shipley Company, L.L.C. Etching process for micromachining crystalline materials and devices fabricated thereby
US6885786B2 (en) 2001-02-07 2005-04-26 Shipley Company, L.L.C. Combined wet and dry etching process for micromachining of crystalline materials

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4706061A (en) * 1986-08-28 1987-11-10 Honeywell Inc. Composition sensor with minimal non-linear thermal gradients
US4784721A (en) * 1988-02-22 1988-11-15 Honeywell Inc. Integrated thin-film diaphragm; backside etch
US5760305A (en) * 1990-10-17 1998-06-02 The Charles Stark Draper Laboratory, Inc. Monolithic micromechanical vibrating beam accelerometer with trimmable resonant frequency

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0418423B2 (fr) * 1989-09-22 1998-12-09 Siemens Aktiengesellschaft Procédé d'attaque anisotrope de silicium
JP3205103B2 (ja) * 1993-01-07 2001-09-04 松下電器産業株式会社 半導体装置の製造方法
US6020272A (en) * 1998-10-08 2000-02-01 Sandia Corporation Method for forming suspended micromechanical structures
US6215946B1 (en) 2000-03-16 2001-04-10 Act Microdevices, Inc. V-groove chip with wick-stop trench for improved fiber positioning

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4706061A (en) * 1986-08-28 1987-11-10 Honeywell Inc. Composition sensor with minimal non-linear thermal gradients
US4784721A (en) * 1988-02-22 1988-11-15 Honeywell Inc. Integrated thin-film diaphragm; backside etch
US5760305A (en) * 1990-10-17 1998-06-02 The Charles Stark Draper Laboratory, Inc. Monolithic micromechanical vibrating beam accelerometer with trimmable resonant frequency

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
See also references of EP1414609A4 *

Also Published As

Publication number Publication date
WO2003008139A2 (fr) 2003-01-30
EP1414609A2 (fr) 2004-05-06
AU2002322561A1 (en) 2003-03-03
JP2004535304A (ja) 2004-11-25
EP1414609A4 (fr) 2012-03-28
KR20040017339A (ko) 2004-02-26
CN1545732A (zh) 2004-11-10

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