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WO2003095702A3 - Method for curing low dielectric constant film by electron beam - Google Patents

Method for curing low dielectric constant film by electron beam Download PDF

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Publication number
WO2003095702A3
WO2003095702A3 PCT/US2003/014272 US0314272W WO03095702A3 WO 2003095702 A3 WO2003095702 A3 WO 2003095702A3 US 0314272 W US0314272 W US 0314272W WO 03095702 A3 WO03095702 A3 WO 03095702A3
Authority
WO
WIPO (PCT)
Prior art keywords
dielectric constant
low dielectric
constant film
electron beam
curing low
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/US2003/014272
Other languages
French (fr)
Other versions
WO2003095702A2 (en
Inventor
Farhad D Moghadam
Jun Zhao
Timothy Weidman
Rick J Roberts
Li-Qun Xia
Alexandros T Demos
Wen H Zhu
Tzu-Fang Huang
Lihua Li
Ellie Y Yieh
Yi Zheng
Srinivas D Nemani
Eric Hollar
Kang Sub Yim
Son Van Nguyen
Cruz Lester A D
Troy Kim
Dian Sugiarto
Peter Wai-Man Lee
Saad Hichem M
Melissa M Tam
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Applied Materials Inc
Original Assignee
Applied Materials Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US10/302,393 external-priority patent/US7060330B2/en
Priority claimed from US10/302,375 external-priority patent/US20040101632A1/en
Priority claimed from US10/409,887 external-priority patent/US20030211244A1/en
Priority to EP03731108A priority Critical patent/EP1504138A2/en
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Priority to JP2004503689A priority patent/JP2005524983A/en
Priority to KR10-2004-7018003A priority patent/KR20050004844A/en
Publication of WO2003095702A2 publication Critical patent/WO2003095702A2/en
Publication of WO2003095702A3 publication Critical patent/WO2003095702A3/en
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/40—Oxides
    • C23C16/401—Oxides containing silicon
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/56—After-treatment
    • H10P14/6539—
    • H10P14/6682—
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D1/00—Processes for applying liquids or other fluent materials
    • B05D1/60—Deposition of organic layers from vapour phase
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D3/00—Pretreatment of surfaces to which liquids or other fluent materials are to be applied; After-treatment of applied coatings, e.g. intermediate treating of an applied coating preparatory to subsequent applications of liquids or other fluent materials
    • B05D3/06—Pretreatment of surfaces to which liquids or other fluent materials are to be applied; After-treatment of applied coatings, e.g. intermediate treating of an applied coating preparatory to subsequent applications of liquids or other fluent materials by exposure to radiation
    • B05D3/068—Pretreatment of surfaces to which liquids or other fluent materials are to be applied; After-treatment of applied coatings, e.g. intermediate treating of an applied coating preparatory to subsequent applications of liquids or other fluent materials by exposure to radiation using ionising radiations (gamma, X, electrons)
    • H10P14/6336—
    • H10P14/6686—
    • H10P14/6922—
    • H10P95/08—

Landscapes

  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Formation Of Insulating Films (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)

Abstract

A method for depositing a low dielectric constant film on a substrate. The method includes depositing a low dielectric constant film comprising silicon, carbon, oxygen and hydrogen in a chemical vapor deposition chamber. The method further includes exposing the low dielectric constant film to an electron beam at conditions sufficient to increase the hardness of the low dielectric constant film.
PCT/US2003/014272 2002-05-08 2003-05-08 Method for curing low dielectric constant film by electron beam Ceased WO2003095702A2 (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
EP03731108A EP1504138A2 (en) 2002-05-08 2003-05-07 Method for using low dielectric constant film by electron beam
JP2004503689A JP2005524983A (en) 2002-05-08 2003-05-08 Method of curing low dielectric constant film by electron beam
KR10-2004-7018003A KR20050004844A (en) 2002-05-08 2003-05-08 Method for curing low dielectric constant film by electron beam

Applications Claiming Priority (8)

Application Number Priority Date Filing Date Title
US37879902P 2002-05-08 2002-05-08
US60/378,799 2002-05-08
US10/302,393 US7060330B2 (en) 2002-05-08 2002-11-22 Method for forming ultra low k films using electron beam
US10/302,375 US20040101632A1 (en) 2002-11-22 2002-11-22 Method for curing low dielectric constant film by electron beam
US10/302,393 2002-11-22
US10/302,375 2002-11-22
US10/409,887 US20030211244A1 (en) 2002-04-11 2003-04-08 Reacting an organosilicon compound with an oxidizing gas to form an ultra low k dielectric
US10/409,887 2003-04-08

Publications (2)

Publication Number Publication Date
WO2003095702A2 WO2003095702A2 (en) 2003-11-20
WO2003095702A3 true WO2003095702A3 (en) 2004-04-15

Family

ID=29424745

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2003/014272 Ceased WO2003095702A2 (en) 2002-05-08 2003-05-08 Method for curing low dielectric constant film by electron beam

Country Status (5)

Country Link
EP (1) EP1504138A2 (en)
JP (1) JP2005524983A (en)
CN (1) CN100400707C (en)
TW (1) TWI282125B (en)
WO (1) WO2003095702A2 (en)

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US7060330B2 (en) 2002-05-08 2006-06-13 Applied Materials, Inc. Method for forming ultra low k films using electron beam
US7056560B2 (en) 2002-05-08 2006-06-06 Applies Materials Inc. Ultra low dielectric materials based on hybrid system of linear silicon precursor and organic porogen by plasma-enhanced chemical vapor deposition (PECVD)
US6936551B2 (en) 2002-05-08 2005-08-30 Applied Materials Inc. Methods and apparatus for E-beam treatment used to fabricate integrated circuit devices
TWI240959B (en) * 2003-03-04 2005-10-01 Air Prod & Chem Mechanical enhancement of dense and porous organosilicate materials by UV exposure
US20050260420A1 (en) * 2003-04-01 2005-11-24 Collins Martha J Low dielectric materials and methods for making same
US20040197474A1 (en) * 2003-04-01 2004-10-07 Vrtis Raymond Nicholas Method for enhancing deposition rate of chemical vapor deposition films
US20040253378A1 (en) * 2003-06-12 2004-12-16 Applied Materials, Inc. Stress reduction of SIOC low k film by addition of alkylenes to OMCTS based processes
JP4032044B2 (en) 2003-06-17 2008-01-16 株式会社半導体プロセス研究所 Film forming method, semiconductor device manufacturing method, and semiconductor device
US7147900B2 (en) * 2003-08-14 2006-12-12 Asm Japan K.K. Method for forming silicon-containing insulation film having low dielectric constant treated with electron beam radiation
CN100446193C (en) 2004-02-13 2008-12-24 松下电器产业株式会社 Formation method of organic-inorganic hybrid insulating film
JP4879159B2 (en) * 2004-03-05 2012-02-22 アプライド マテリアルズ インコーポレイテッド CVD process for amorphous carbon film deposition
US20050214457A1 (en) * 2004-03-29 2005-09-29 Applied Materials, Inc. Deposition of low dielectric constant films by N2O addition
US7611996B2 (en) 2004-03-31 2009-11-03 Applied Materials, Inc. Multi-stage curing of low K nano-porous films
JP2005294333A (en) * 2004-03-31 2005-10-20 Semiconductor Process Laboratory Co Ltd Film forming method and semiconductor device
US7018941B2 (en) * 2004-04-21 2006-03-28 Applied Materials, Inc. Post treatment of low k dielectric films
US7049247B2 (en) * 2004-05-03 2006-05-23 International Business Machines Corporation Method for fabricating an ultralow dielectric constant material as an intralevel or interlevel dielectric in a semiconductor device and electronic device made
JP4435666B2 (en) 2004-11-09 2010-03-24 東京エレクトロン株式会社 Plasma processing method, film forming method
US7202564B2 (en) * 2005-02-16 2007-04-10 International Business Machines Corporation Advanced low dielectric constant organosilicon plasma chemical vapor deposition films
TW200730660A (en) * 2005-04-08 2007-08-16 Taiyo Nippon Sanso Corp Materials for an insulation film and a method for forming a film using the same
JP2007042747A (en) * 2005-08-01 2007-02-15 Taiyo Nippon Sanso Corp Method for forming insulating film and insulating film
JP2007051996A (en) * 2005-08-19 2007-03-01 Ngk Insulators Ltd Electron beam irradiation device
JP4641933B2 (en) * 2005-11-28 2011-03-02 三井化学株式会社 Thin film formation method
US20070134435A1 (en) * 2005-12-13 2007-06-14 Ahn Sang H Method to improve the ashing/wet etch damage resistance and integration stability of low dielectric constant films
JP2007258403A (en) * 2006-03-23 2007-10-04 United Microelectronics Corp Porous low dielectric constant thin film and manufacturing method thereof
US7829422B2 (en) 2006-12-22 2010-11-09 Chartered Semiconductor Manufacturing, Ltd. Integrated circuit having ultralow-K dielectric layer
JP5074059B2 (en) * 2007-02-28 2012-11-14 東京エレクトロン株式会社 Interlayer insulating film and wiring structure, and manufacturing method thereof
US7998536B2 (en) * 2007-07-12 2011-08-16 Applied Materials, Inc. Silicon precursors to make ultra low-K films of K<2.2 with high mechanical properties by plasma enhanced chemical vapor deposition
US7989033B2 (en) * 2007-07-12 2011-08-02 Applied Materials, Inc. Silicon precursors to make ultra low-K films with high mechanical properties by plasma enhanced chemical vapor deposition
US7964442B2 (en) * 2007-10-09 2011-06-21 Applied Materials, Inc. Methods to obtain low k dielectric barrier with superior etch resistivity
JP2010153824A (en) 2008-11-18 2010-07-08 Renesas Electronics Corp Method of manufacturing porous insulating film, method of manufacturing semiconductor device, and semiconductor device
JP2011014872A (en) * 2009-06-04 2011-01-20 Tokyo Electron Ltd Method and device for forming amorphous carbon film
KR101790206B1 (en) 2010-10-05 2017-10-25 실코텍 코포레이션 Wear resistant coating, article, and method
US9371423B2 (en) * 2013-07-09 2016-06-21 General Electric Company Methods and apparatus for crosslinking a silicon carbide fiber precursor polymer
US9219006B2 (en) * 2014-01-13 2015-12-22 Applied Materials, Inc. Flowable carbon film by FCVD hardware using remote plasma PECVD
US10910216B2 (en) 2017-11-28 2021-02-02 Taiwan Semiconductor Manufacturing Co., Ltd. Low-k dielectric and processes for forming same
US20200071819A1 (en) * 2018-08-29 2020-03-05 Versum Materials Us, Llc Methods For Making Silicon Containing Films That Have High Carbon Content
WO2020112782A1 (en) * 2018-11-27 2020-06-04 Versum Materials Us, Llc 1-methyl-1-iso-propoxy-silacycloalkanes and dense organosilica films made therefrom
US11756786B2 (en) 2019-01-18 2023-09-12 International Business Machines Corporation Forming high carbon content flowable dielectric film with low processing damage
CN110129769B (en) 2019-05-17 2021-05-14 江苏菲沃泰纳米科技股份有限公司 Hydrophobic low dielectric constant film and method for preparing same
CN110158052B (en) * 2019-05-17 2021-05-14 江苏菲沃泰纳米科技股份有限公司 Low dielectric constant film and preparation method thereof
KR102921469B1 (en) * 2019-06-06 2026-01-30 어플라이드 머티어리얼스, 인코포레이티드 Methods for post-processing silicon nitride dielectric films using high-energy, low-dose plasma
CN112595656B (en) * 2020-12-09 2022-05-27 中国兵器工业第五九研究所 Testing device and evaluation method for adaptability of explosive device long-storage environment for bomb

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WO2001029052A1 (en) * 1999-10-18 2001-04-26 Alliedsignal Inc. Deposition of films using organosilsesquioxane-precursors
US6271146B1 (en) * 1999-09-30 2001-08-07 Electron Vision Corporation Electron beam treatment of fluorinated silicate glass
WO2001061737A1 (en) * 2000-02-17 2001-08-23 Electron Vision Corporation Electron beam modification of cvd deposited films, forming low dielectric constant materials
EP1354980A1 (en) * 2002-04-17 2003-10-22 Air Products And Chemicals, Inc. Method for forming a porous SiOCH layer.

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WO1997000535A1 (en) * 1995-06-15 1997-01-03 Alliedsignal Inc. Electron-beam processed films for microelectronics structures
US6271146B1 (en) * 1999-09-30 2001-08-07 Electron Vision Corporation Electron beam treatment of fluorinated silicate glass
WO2001029052A1 (en) * 1999-10-18 2001-04-26 Alliedsignal Inc. Deposition of films using organosilsesquioxane-precursors
WO2001061737A1 (en) * 2000-02-17 2001-08-23 Electron Vision Corporation Electron beam modification of cvd deposited films, forming low dielectric constant materials
EP1354980A1 (en) * 2002-04-17 2003-10-22 Air Products And Chemicals, Inc. Method for forming a porous SiOCH layer.

Also Published As

Publication number Publication date
EP1504138A2 (en) 2005-02-09
TWI282125B (en) 2007-06-01
CN100400707C (en) 2008-07-09
CN1662676A (en) 2005-08-31
TW200403766A (en) 2004-03-01
JP2005524983A (en) 2005-08-18
WO2003095702A2 (en) 2003-11-20

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