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WO2003081725B1 - A miniaturized contact spring - Google Patents

A miniaturized contact spring

Info

Publication number
WO2003081725B1
WO2003081725B1 PCT/US2003/008520 US0308520W WO03081725B1 WO 2003081725 B1 WO2003081725 B1 WO 2003081725B1 US 0308520 W US0308520 W US 0308520W WO 03081725 B1 WO03081725 B1 WO 03081725B1
Authority
WO
WIPO (PCT)
Prior art keywords
core
substrate
film
layer
interconnection apparatus
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/US2003/008520
Other languages
French (fr)
Other versions
WO2003081725A3 (en
WO2003081725A2 (en
Inventor
Syamal Kumar Lahiri
Frank Swiatowiec
Fu-Chiung Chong
Sammy Mok
Erh-Kong Chieh
Roman L Milter
Joseph M Haemer
Chang-Ming Lin
Yi-Hseng Chen
David Thanh Doan
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NanoNexus Inc
Original Assignee
NanoNexus Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US10/178,103 external-priority patent/US6917525B2/en
Priority claimed from PCT/US2002/026785 external-priority patent/WO2003018865A1/en
Priority claimed from US10/390,994 external-priority patent/US7137830B2/en
Priority claimed from US10/390,098 external-priority patent/US6943149B2/en
Priority to DE10392441T priority Critical patent/DE10392441T5/en
Priority to AU2003218288A priority patent/AU2003218288A1/en
Application filed by NanoNexus Inc filed Critical NanoNexus Inc
Priority to KR10-2004-7014722A priority patent/KR20040093740A/en
Priority to JP2003579319A priority patent/JP2006508495A/en
Publication of WO2003081725A2 publication Critical patent/WO2003081725A2/en
Publication of WO2003081725A3 publication Critical patent/WO2003081725A3/en
Publication of WO2003081725B1 publication Critical patent/WO2003081725B1/en
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B3/00—Devices comprising flexible or deformable elements, e.g. comprising elastic tongues or membranes
    • B81B3/0064—Constitution or structural means for improving or controlling the physical properties of a device
    • B81B3/0067—Mechanical properties
    • B81B3/0072—For controlling internal stress or strain in moving or flexible elements, e.g. stress compensating layers
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R1/00—Details of instruments or arrangements of the types included in groups G01R5/00 - G01R13/00 and G01R31/00
    • G01R1/02—General constructional details
    • G01R1/06—Measuring leads; Measuring probes
    • G01R1/067—Measuring probes
    • G01R1/06711—Probe needles; Cantilever beams; "Bump" contacts; Replaceable probe pins
    • G01R1/06716—Elastic
    • G01R1/06727—Cantilever beams
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R1/00—Details of instruments or arrangements of the types included in groups G01R5/00 - G01R13/00 and G01R31/00
    • G01R1/02—General constructional details
    • G01R1/06—Measuring leads; Measuring probes
    • G01R1/067—Measuring probes
    • G01R1/06711—Probe needles; Cantilever beams; "Bump" contacts; Replaceable probe pins
    • G01R1/06755—Material aspects
    • G01R1/06761—Material aspects related to layers
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R1/00—Details of instruments or arrangements of the types included in groups G01R5/00 - G01R13/00 and G01R31/00
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    • G01R1/06—Measuring leads; Measuring probes
    • G01R1/067—Measuring probes
    • G01R1/073—Multiple probes
    • G01R1/07307—Multiple probes with individual probe elements, e.g. needles, cantilever beams or bump contacts, fixed in relation to each other, e.g. bed of nails fixture or probe card
    • G01R1/07357—Multiple probes with individual probe elements, e.g. needles, cantilever beams or bump contacts, fixed in relation to each other, e.g. bed of nails fixture or probe card with flexible bodies, e.g. buckling beams
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R3/00—Apparatus or processes specially adapted for the manufacture or maintenance of measuring instruments, e.g. of probe tips
    • H—ELECTRICITY
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/71—Means for bonding not being attached to, or not being formed on, the surface to be connected
    • H01L24/72—Detachable connecting means consisting of mechanical auxiliary parts connecting the device, e.g. pressure contacts using springs or clips
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K7/00—Constructional details common to different types of electric apparatus
    • H05K7/02—Arrangements of circuit components or wiring on supporting structure
    • H05K7/10—Plug-in assemblages of components, e.g. IC sockets
    • H05K7/1053—Plug-in assemblages of components, e.g. IC sockets having interior leads
    • H05K7/1061—Plug-in assemblages of components, e.g. IC sockets having interior leads co-operating by abutting
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B2201/00—Specific applications of microelectromechanical systems
    • B81B2201/01—Switches
    • B81B2201/012—Switches characterised by the shape
    • B81B2201/018—Switches not provided for in B81B2201/014 - B81B2201/016
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    • H01R12/00—Structural associations of a plurality of mutually-insulated electrical connecting elements, specially adapted for printed circuits, e.g. printed circuit boards [PCB], flat or ribbon cables, or like generally planar structures, e.g. terminal strips, terminal blocks; Coupling devices specially adapted for printed circuits, flat or ribbon cables, or like generally planar structures; Terminals specially adapted for contact with, or insertion into, printed circuits, flat or ribbon cables, or like generally planar structures
    • H01R12/70—Coupling devices
    • H01R12/71—Coupling devices for rigid printing circuits or like structures
    • H01R12/712—Coupling devices for rigid printing circuits or like structures co-operating with the surface of the printed circuit or with a coupling device exclusively provided on the surface of the printed circuit
    • H01R12/716—Coupling device provided on the PCB
    • H01R12/718—Contact members provided on the PCB without an insulating housing
    • H—ELECTRICITY
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    • H01R—ELECTRICALLY-CONDUCTIVE CONNECTIONS; STRUCTURAL ASSOCIATIONS OF A PLURALITY OF MUTUALLY-INSULATED ELECTRICAL CONNECTING ELEMENTS; COUPLING DEVICES; CURRENT COLLECTORS
    • H01R13/00—Details of coupling devices of the kinds covered by groups H01R12/70 or H01R24/00 - H01R33/00
    • H01R13/02—Contact members
    • H01R13/22—Contacts for co-operating by abutting
    • H01R13/24—Contacts for co-operating by abutting resilient; resiliently-mounted
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    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/40—Forming printed elements for providing electric connections to or between printed circuits
    • H05K3/4092—Integral conductive tabs, i.e. conductive parts partly detached from the substrate

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Mechanical Engineering (AREA)
  • Power Engineering (AREA)
  • Measuring Leads Or Probes (AREA)
  • Manufacture Of Switches (AREA)
  • Electroplating Methods And Accessories (AREA)

Abstract

This invention provides a solution to increase the yield strength and fatigue strength of miniaturized springs (507), which can be fabricated in arrays with ultra-small pitches. It also discloses a solution to minimize adhesion of the contact pad materials to the spring tips upon repeated contacts without affecting the reliability of the miniaturized springs (507). In addition, the invention also presents a method to fabricate the springs (507) that allow passage of relatively higher current without significantly degrading their lifetime.

Claims

AMENDED CLAIMS[Received by the International Bureau on 20 Ocotober 2003 (20.10.03) original claims 4-5, 7-8, 10-11, 13-16, 20-22,27,29-30,32-33,35-37,42 44,47,50-61 ; remaining claims unchanged]
1. An interconnection apparatus for establishing electrical contact between two components, comprising:
at least one elastic core member, said core member comprising an anchor portion attached to a substrate having at least one through-via therein filled with electrically conducting material, and a free portion, initially attached to said substrate, which, upon release, extends away from said substrate due to an inherent stress gradient in the core;
wherein said core member is electrodepositedly enveloped with at least one layer covering all exposed surfaces of said core member.
2. The interconnection apparatus of Claim 1 , wherein said envelope comprises electroplated films.
3. The interconnection apparatus of Claim 1 , wherein said free portion is either of substantially tapered having a width that gradually decreases towards the probe tip over a substantial length of the free portion, and substantially trapezoidal in shape.
4. The interconnection apparatus of Claim 1 , wherein said at least one layer comprises at least any one of nickel, palladium, platinum, rhodium, ruthenium, osmium, iridium, gold, silver, copper, cobalt, aluminum, tungsten, and any of their alloys.
58
5. The interconnection apparatus of Claim 1 , wherein the average grain size of said at least one layer ranges from 3 to 500 nm.
6. The interconnection apparatus of Claim 1 , wherein at least one layer is electroplated with intrinsic compressive stress.
7. The interconnection apparatus of Claim 1 , wherein at least one layer near the surface of the electrodepositedly enveloped core member has a lower elastic modulus than said core member that it surrounds.
8. The interconnection apparatus of Claim 1 , wherein said envelope comprises a plurality of different and sequentially electrodeposited films.
9. The interconnection apparatus of Claim 8, wherein the electrodeposited films are deposited in such a manner that the elastic modulus of the deposited films either of generally decreases progressively from the innermost core toward an outermost surface, and decreases substantially discreetly from the innermost core toward an outermost surface.
10. The/interconnection apparatus of Claim 1 , further comprising:
a film layer selectively dispensed at a probe tip area onto said electrodepositedly enveloped core member, said film layer comprising at least one electrically conducting material that does not have strong adherence to an opposite contact pad or terminal.
59
11. The interconnection apparatus of Claim 10, wherein said at least one electrically conducting material comprises at least any one of palladium, rhodium, platinum, iridium, osmium, ruthenium, cobalt, nickel, gold, and their alloys.
12. The interconnection apparatus of Claim 1 , wherein said free portion has a size ranging from 10 μm to 1000 μm in length, 3 μm to 500μm in width, and 0.1 μm to 40 μm in thickness.
13. The interconnection apparatus of Claim 1 , wherein the outermost layer of said at least one layer comprises any of copper, gold, nickel, and platinum group materials comprising palladium, platinum, iridium, rhodium, ruthenium and osmium.
14 The interconnection apparatus of Claim 1 , wherein said substrate comprises any of ceramic, glass, silicon, quartz and organic materials.
15. The interconnection apparatus of Claim of 1 , wherein said core member comprises any of molybdenum, chromium, titanium, tungsten, zirconium, molybdenum-chromium alloy, and titanium-tungsten alloy.
16. A method for manufacturing a plurality of miniaturized springs on a substrate, said miniaturized springs each comprising an electrically conducting core member, said core member having an anchor portion and a free portion, initially attached to the substrate, which extends away from the substrate upon release due to an inherent stress gradient in the core, said free portion having a tip area at the end, said anchor portion being fixed to a substrate comprising one or more electrically conductive through-vias, the method comprising the steps of:
60 electroplating of spring core members with at least one film layer to cover all surfaces of said core member including free portion without using a mask; and
said electroplating of core members is performed using through-vias in said substrate to establish electrical contact to said core members from the substrate side opposite to the side where core members are located.
17. The method of Claim 16, wherein at least one film layer is electroplated with intrinsic compressive stress.
18 The method of Claim 16, wherein said at least one film layer is electroplated with an average grain size in the range of 3 to 500 nm.
19 The method of Claim 18, wherein the grain size of at least one electroplated film is controlled by altering the additive composition in the electroplating bath, and/or the current density during plating.
20 The method of Claim 16, wherein said at least one film layer is selected from the group of materials, which comprise any of platinum, palladium, rhodium, iridium, ruthenium, osmium, cobalt, nickel, gold, silver, copper, aluminum; and an alloy comprising at least any one of cobalt, nickel, gold, copper, silver, aluminum, platinum, palladium, rhodium, iridium, ruthenium, osmium, and tungsten.
21. The method of Claim 16, further comprising the step of:
selectively coating said tip area to form a contact button subsequent to said electroplating of core members;
61 wherein said contact button comprises at least one electrically conducting material that does not have strong adherence to an opposite contact pad or terminal; and
wherein said tip area is optionally selectively coated to form said contact button either of before said free portion is released from said substrate, and after said free portion is released from said substrate.
22. The method of Claim 21 , wherein said at least one electrically conducting material comprises at least any one of palladium, rhodium, platinum, iridium, osmium, ruthenium, cobalt, nickel, gold, silver, copper and their alloys.
23. The method of Claim 16, further comprising the step of:
forming said core film's pattern by dry etching.
24. The method of Claim 16, further comprising the step of:
polishing said core film before deposition of said layer.
25. The method of Claim 16, further comprising the step of:
polishing the outermost surface using any of an electropolishing, chemical polishing, and electrochemical polishing process.
26. An interconnection apparatus for establishing electrical contact between two components, comprising:
62 at least one elastic core member, said core member comprising an anchor portion attached to a substrate with multilevel metallization having at least one electrically conducting via and a free portion, initially attached to said substrate, which, upon release, extends away from said substrate due to an inherent stress gradient in the core;
wherein said core member is electrodepositedly enveloped with at least one layer covering all exposed surfaces of said core member.
27. An interconnection apparatus for electrically connecting two components, comprising:
at least one elastic core member, said core member comprising an anchor portion attached to a substrate and a free portion, initially attached to said substrate, which, upon release, extends away from said substrate due to an inherent stress gradient in the core;
at least one layer which electrodepositedly envelops said core member, covering all exposed surfaces of said core member; and
a film layer selectively dispensed at a probe tip area onto said electrodepositedly enveloped core member.
28. The interconnection apparatus of Claim 27, wherein said envelope comprises electroplated films.
29. The interconnection apparatus of Claim 27, wherein said free portion is either of substantially tapered having a width that gradually decreases towards the probe tip over a substantial length of the free portion, and substantially trapezoidal in shape.
30. The interconnection apparatus of Claim 27, wherein said at least one layer is selected from at least any one of nickel, palladium, platinum, rhodium, ruthenium, osmium, iridium, gold, silver, copper, cobalt, tungsten aluminum, and any of their alloys.
31. The interconnection apparatus of Claim 27, wherein at least one layer is electroplated with intrinsic compressive stress.
32. The interconnection apparatus of Claim 27, wherein the average grain size of said at least one layer ranges from 3 to 500 nm.
33. The interconnection apparatus of Claim 27, wherein said envelope comprises plurality of different and sequentially electrodeposited films; and
wherein said electrodeposited films are deposited in such a manner that the elastic modulus of the deposited films either of generally decreases progressively from the innermost core toward an outermost surface, and decreases substantially discreetly from the innermost core toward an outermost surface.
34. The interconnect apparatus of Claim 27, wherein said anchor portion is attached to a substrate with plurality of through-vias therein filled with electrically conducting material.
64
35. The interconnect apparatus of Claim 27, wherein said film layer comprises at least any one of palladium, rhodium, platinum, iridium, osmium, ruthenium, and cobalt, nickel, gold, silver, copper and their alloys.
36. The interconnection apparatus of Claim 27, wherein said free portion has a size ranging from 10 μm to 1000 μm in length, 3 μm to 500μm in width, and 0.1 μm to 40μm in thickness.
37. A method for manufacturing a plurality of miniaturized springs on a substrate, said miniaturized springs each comprising an electrically conducting core member, said core member having an anchor portion and a free portion, initially attached to the substrate, which extends away from the substrate upon release due to an inherent stress gradient in the core, said free portion having a tip area at the end, said anchor portion being fixed to said substrate, the method comprising the steps of:
electroplating of spring core members with at least one film layer to cover all surfaces of said core member including free portion without using a mask; and
selectively coating said tip area to form a contact button subsequent to said electroplating of core members;
wherein said contact button comprises at least one electrically conducting material that does not have strong adherence to an opposite contact pad or terminal.
38. The method of Claim 37, wherein said at least one film layer is electroplated with intrinsic compressive stress.
65
39. The method of Claim 37, wherein said at least one film layer is electroplated with an average grain size in the range of 3 to 500 nm.
40. The method of Claim 39, wherein the grain size of at least one electroplated film is controlled by altering the additive composition in the electroplating bath, and/or the current density during plating.
41. The method of Claim 37, wherein a material used for an inner layer has a higher elastic modulus;
wherein a material used for outer layers has a lower elastic modulus; and
wherein the elastic modulus of said layers either of decreases progressively from an innermost layer toward an outermost layer, and decreases discretely from an innermost layer toward an outermost layer.
42. The method of Claim 37, wherein said at least one film layer comprises at least any one of platinum, palladium, rhodium, iridium, ruthenium, osmium, cobalt, nickel, gold, silver, copper, aluminum, tungsten, and their alloys.
43. The method of Claim 37, wherein said substrate comprises any of ceramic, glass, silicon, quartz and organic materials.
44. The method of Claim 37, wherein said core member comprises any of molybdenum, chromium, titanium, tungsten, zirconium, molybdenum-chromium alloy, and titanium-tungsten alloy.
45. The method of Claim 37, further comprising the step of:
66 said electroplating of core members is performed using through-vias in said substrate to establish electrical contact to said core members from the substrate side opposite to the side where core members are located.
46. The method of Claim 37, wherein said tip area is selectively coated to form said contact button either of before said free portion is released from said substrate, and after said free portion is released from said substrate.
47. The method of Claim 37, wherein said at least one electrically conducting material comprises at least any one of platinum, palladium, rhodium, iridium, ruthenium, osmium, cobalt, nickel, gold, silver, copper, tungsten, and their alloys.
48 The method of Claim 37, further comprising the step of:
forming said core film's pattern by dry etching.
49. The method of Claim 37, further comprising the step of:
polishing said core film before deposition of said layer;
optionally polishing the outermost surface using any of an electropolishing, chemical polishing, and electrochemical polishing process.
50. A method for manufacturing miniaturized springs on a substrate, each of said miniaturized springs comprising an anchor portion and a free portion, said free portion having a tip area at its end, said spring's width decreasing gradually from the vicinity of said anchor portion toward said tip area, the method comprising steps of:
depositing a core film member;
67 patterning said core film member's body to shape said anchor portion and said free portion;
releasing said free portion from said substrate;
depositing at least one overlying film layer onto said core film member, said at least one overlying film layer covering all surfaces of said core film member;
laying a photoresist film on said core film member coated with said at least one overlying film;
patterning said photoresist film to expose an area over said tip area coated with said at least one overlying film;
coating exposed tip area covered with said at least one overlying film layer with an electrically conducting contact material that minimizes contact adhesion occurring in repeated touchdowns; and
removing said photoresist film from said core film member.
51. The method of Claim 50, wherein said electroplating is performed using through- vias in said substrate to establish electrical contact to springs from the substrate side opposite to the side where springs are located.
52. The method of Claim 50, wherein at least one overlying film layer is electroplated with intrinsic compressive stress.
53. The method of Claim 50, wherein said at least one overlying film layer is electroplated with an average grain size in the range of 3 to 500 nm.
68
54. The method of Claim 53, wherein the grain size of at least one electroplated film is controlled by altering the additive composition in the electroplating bath, and/or the current density during plating.
55. The method of Claim 50, wherein a material used for an inner film layer has a higher elastic modulus;
wherein a material used for outer film layers has a lower elastic modulus;
wherein the elastic modulus of said film layers either of decreases progressively from an innermost film layer toward an outermost layer, and decreases discretely from an innermost film layer toward an outermost film layer.
56. The method of Claim 50, said contact material is deposited by any of electroplating, sputtering and chemical vapor deposition.
57. The method of Claim 56, wherein said electroplating is performed using through- vias in said substrate to establish electrical contact to springs from the substrate side opposite to the side where springs are located.
58. The method of Claim 50, wherein said at least one overlying film layer onto said core film member comprises at least any one of platinum, palladium, rhodium, iridium, ruthenium, osmium, cobalt, nickel, gold, silver, copper, aluminum, tungsten, and their alloys.
59. The method of Claim 50, wherein said contact material comprises any of cobalt, nickel, gold, copper, silver, platinum, palladium, rhodium, iridium, ruthenium, and osmium.
69
60. The method of Claim 50, wherein said substrate comprises any of ceramic, glass, silicon, quartz, and organic materials.
61. The method of Claim 50, wherein said core film member comprises any of molybdenum, chromium, titanium, tungsten, zirconium, molybdenum-chromium alloy, and titanium-tungsten alloy.
70
PCT/US2003/008520 2002-03-18 2003-03-18 A miniaturized contact spring Ceased WO2003081725A2 (en)

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JP2003579319A JP2006508495A (en) 2002-03-18 2003-03-18 Miniaturized contact spring
KR10-2004-7014722A KR20040093740A (en) 2002-03-18 2003-03-18 A miniaturized contact spring
DE10392441T DE10392441T5 (en) 2002-03-18 2003-03-18 A miniaturized contact spring
AU2003218288A AU2003218288A1 (en) 2002-03-18 2003-03-18 A miniaturized contact spring

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US36562502P 2002-03-18 2002-03-18
US60/365,625 2002-03-18
US10/178,103 2002-06-24
US10/178,103 US6917525B2 (en) 2001-11-27 2002-06-24 Construction structures and manufacturing processes for probe card assemblies and packages having wafer level springs
PCT/US2002/026785 WO2003018865A1 (en) 2001-08-24 2002-08-23 Method and apparatus for producing uniform isotropic stresses in a sputtered film
USPCT/US02/26785 2002-08-23
US10/390,098 US6943149B2 (en) 1999-06-29 2003-03-17 Benzimidazolone peptidomimetics as thrombin receptor antagonists
US10/390,098 2003-03-17
US10/390,994 US7137830B2 (en) 2002-03-18 2003-03-17 Miniaturized contact spring
US10/390,994 2003-03-17

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US7382142B2 (en) 2000-05-23 2008-06-03 Nanonexus, Inc. High density interconnect system having rapid fabrication cycle
US7403029B2 (en) 1999-05-27 2008-07-22 Nanonexus Corporation Massively parallel interface for electronic circuit
US7579848B2 (en) 2000-05-23 2009-08-25 Nanonexus, Inc. High density interconnect system for IC packages and interconnect assemblies
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US7403029B2 (en) 1999-05-27 2008-07-22 Nanonexus Corporation Massively parallel interface for electronic circuit
US7349223B2 (en) 2000-05-23 2008-03-25 Nanonexus, Inc. Enhanced compliant probe card systems having improved planarity
US7382142B2 (en) 2000-05-23 2008-06-03 Nanonexus, Inc. High density interconnect system having rapid fabrication cycle
US7579848B2 (en) 2000-05-23 2009-08-25 Nanonexus, Inc. High density interconnect system for IC packages and interconnect assemblies
US7621761B2 (en) 2000-06-20 2009-11-24 Nanonexus, Inc. Systems for testing and packaging integrated circuits

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