WO2003076059A1 - Gas mixer, gas reactor and surface modifying device - Google Patents

Abstract

A gas mixer capable of producing a uniformly mixed uniformly heated mixed gas or reaction gas; and a gas reactor. The gas mixer or gas reactor is characterized by comprising a mixing flow path consisting of a circumferentially communicating annular flow path, a plurality of inflow ports and outflow ports formed in the annular flow path such that their positions in the annular flow path are circumferentially staggered, and a plurality of communication flow paths communicating with the inflow ports or outflow ports formed in the annular flow path; and a feed flow path and a delivery flow path for fluid that communicate with the mixing flow path. Further, a surface modifying device is characterized by connecting this gas reactor to an accumulation chamber.

Description

 Specification

Gas mixing device, gas reaction device and surface reforming device

Technical field

 The present invention relates to a gas mixing device, a gas reaction device, and a semiconductor well used in a chemical reaction process in a chemical plant, a semiconductor manufacturing process, and the like. The present invention relates to a surface modification device used for surface treatment of glass substrates such as glass and glass substrates, and for surface treatment of parts and tools.

Background technology ''

 When reacting gas in a reaction furnace, the gas is allowed to flow in a fixed amount using a flow meter or a mass flow, and then reacted in the reaction furnace.

 However, much of the supplied gas is heated for the first time in the reactor, so that it takes a long time to reach the reaction temperature. As a result, a temperature difference occurs in the gas in the furnace, and the entire gas does not reach a uniform temperature, so that it is difficult to generate a uniform reactant.

 When a plurality of gases are reacted in a reaction furnace, a mixed gas consisting of a plurality of gases is uniformly mixed and stirred, and at the same time, the entire gas is adjusted to a uniform temperature. If not, it is difficult to generate a uniform reaction product.

 When a plurality of gases are reacted in the reactor, the reaction in the reactor may be performed quickly unless the plurality of gases are adjusted to their own uniform temperatures. Can not.

 The reactor must be made of a material that can withstand high temperatures and large enough to accommodate the object, and the larger the object, the lower the cost of the reactor. growing .

When the processing gas is reacted in the reaction furnace, often the entire gas in the reaction chamber is Since the treated gas is heated and reacted, the energy consumed for the reaction is increased. In addition, since a temperature difference is generated in the entire processing gas, a temperature unevenness is generated in the object to be processed, and there is a defect that uniform reaction processing is difficult to come and go. Surface treatment equipment used for the surface treatment of the object to be treated, for example, is provided with a reactor for processing gas, and the processing gas in the reactor is subjected to thermal ionization, discharge, and irradiation of laser light. The treated gas is reacted by any method, and the surface of the object to be treated is treated in the reactor.

 Such a surface modification apparatus includes a processing gas, which is often used for surface modification of an object to be treated, such as a method using thermal ionization, discharge, or laser light. Since the reaction temperature of the gas is high, the energy consumption is large and the object to be treated is limited to materials that can withstand high temperatures. Disclosure of the invention

 In order to solve the above problems, the present invention is directed to an annular flow path communicating in the circumferential direction, and a position of an inlet and an outlet in the annular flow path in the circumferential direction. A plurality of inlets and outlets formed in the annular channel so as to deviate from each other; and the inlet or the above-mentioned channel formed in the annular channel. A mixed flow path composed of a plurality of communication flow paths connected to the outlet, and a supply flow path and a discharge flow path of the fluid connected to the mixed flow path It is a gas mixing device equipped with a gas mixture.

A plurality of annular flow paths arranged in a parallel arrangement and communicating in the circumferential direction, and the positions of the inlet and the outlet in the annular flow path are circumferential. A plurality of inlets and outlets formed in the annular channel so as to be deviated from each other, and an inlet formed in a different annular channel. A mixed flow path consisting of a plurality of communication flow paths connecting the outlet and the outlet, and a supply flow path for a fluid connected to the mixed flow path. Gas mixture with exhaust and discharge channels It may be an integrated device.

 An annular flow path communicating in the circumferential direction; and a plurality of annular flow paths formed in the annular flow path such that the positions of the inlet and the outlet in the annular flow path are shifted in the circumferential direction. A gas reaction flow path comprising an inflow port and an outflow port of the above, and a plurality of communication channels formed in an annular flow path and communicating with the inflow port or the outflow port; and The gas reactor may be provided with a supply flow path and a discharge flow path for the fluid that is communicated with the reaction channel.

 A plurality of annular flow passages arranged in a state of being parallel to each other and communicating in the circumferential direction, and the annular shape such that the positions of the inlet and the outlet in the annular flow passage are shifted in the circumferential direction. A plurality of inflow and outflow ports formed in the flow path; and a plurality of communication flow paths communicating the inflow port and the outflow port formed in different annular flow paths. The gas reaction device may be provided with a gas reaction flow path as described above, and a supply flow path and a discharge flow path of a fluid connected to the gas reaction flow path.

 In the scope of the claims, the inlet and the outlet are respectively provided in the annular flow path, and the gas flows into the annular flow path and the annular flow path force. Means the outlet from which the gas flows out. In the embodiment, in addition to the inflow port 31 and the outflow port 32 in this sense, gas flows into or out of the communication channel. The terms of the inlet 28 and outlet 29 of the communication channel, which is the mouth, are also used.

 The gas supply device is connected to the supply channel of the gas mixing device or the gas reaction device, or a heating means for heating the mixing channel and the gas reaction channel is provided. It is advisable to install a tank in the supply flow path and the discharge flow path. It is good to connect the gas discharge port of the vacuum ejector that flows in multiple gases and discharges the mixed gas to the supply flow path of the gas mixing device.

Gas reactor with a gas reactor connected to the discharge channel of the gas mixer It is good.

 A pump may be connected to the reaction gas discharge port of the gas reactor connected to the gas mixing device.

 The gas flowing through the gas reaction channel is a single or a plurality of gases, which react in the reaction channel.

 The discharge channel of the gas reactor may be a surface reformer connected to the accumulation chamber.

 The gas to be treated by the gas mixing device and gas reaction device of the present invention is not limited to gas at normal temperature, but also includes liquefied gas that becomes gas when heated. It is a thing.

 By heating the mixing device, the gas can be heated to a uniform temperature.

 When a plurality of gases are sent to one mixing device, the gas is further mixed by the high-speed collisional turbulence of the gas in the mixing flow path so that the plurality of gases are uniformly stirred. When the gas passes through the flow path, it collides with the wall at multiple points, so that a plurality of gases are further finely and uniformly agitated and are discharged from the discharge flow path. In the configuration provided with the ejector, a plurality of gases input to the vacuum ejector are mixed, and the mixed gas is discharged.

 In a configuration in which a pump is connected to a reaction gas discharge port of a gas reaction furnace, the reaction gas whose reaction has been completed is discharged from the reaction furnace by the pump. When the same type or a plurality of processing gases are sent to the gas reaction channel, the same type or a plurality of types may be generated by the high-speed collisional turbulence of the gas in the channel. The processing gas of collides with each other many times. In the gas, molecules and atoms move around at a high speed, and repeatedly collide with each other and run around irregularly. At that time, when the flow path is heated, the processing gas is also heated.

If the heating temperature is increased, the treated gas will react. Even if the amount of processing gas flowing in the flow passage is increased, the flow velocity of the gas in the flow passage is increased, the number of collisions with the wall surface is increased, and more heat is given from the wall surface. Therefore, even if the amount of the processing gas is increased, the heating reaction can be efficiently performed in the same reaction channel.

 It is possible to increase the number of collisional turbulence motions of the processing gas by simply increasing the number of annular flow paths, and it is possible to react the processing gas with higher density.

 Further, in the reaction of a plurality of processing gases, the plurality of processing gases are uniformly mixed and stirred, so that a reaction gas mixed in a uniform state can be generated.

 If the flow path is heated to the reaction temperature of the treated gas, a large amount of uniform temperature and uniform mixed reaction gas is produced under the pressure of the treated gas. Rukoto can

 The reaction gas heated to the reaction temperature is discharged from the discharge channel by the pressure of the processing gas.

 According to the present invention configured as described above, in the configuration in which the mixing device is heated, the gas is uniformly heated to a temperature close to the reaction temperature in the furnace. Can be supplied.

 Further, in a configuration in which a plurality of gases are sent into one mixing channel, this allows a plurality of gases to be supplied into the reaction furnace to be uniformly stirred. Wear .

 According to the present invention configured as described above, the reaction gas having a uniform temperature can be produced only by flowing the processing gas into the gas reaction channel heated to the reaction temperature. It can be manufactured.

Further, in a configuration in which a plurality of processing gases are sent into a single gas reaction channel, a uniformly mixed reaction gas having a uniform temperature can be produced. Brief explanation of drawings

 FIG. 1 is a system diagram showing a gas mixing device and a gas reaction device according to one embodiment of the present invention.

 FIG. 2 is a system diagram showing a gas mixing device and a gas reaction device according to another embodiment of the present invention.

 FIG. 3 is a system diagram showing a gas mixing device and a gas reaction device according to another embodiment of the present invention.

 FIG. 4 is a system diagram showing a gas mixing device and a gas reaction device according to another embodiment of the present invention.

 FIG. 5 is a system diagram showing a gas mixing device and a gas reaction device according to another embodiment of the present invention.

 FIG. 6 is a system diagram showing a gas mixing device and a gas reaction device according to another embodiment of the present invention.

 FIG. 7 is a perspective view of a case where a mixing channel and a reaction channel used in the apparatus according to the embodiment of the present invention are manufactured by piping.

 FIG. 8 is a perspective view showing a case where a mixed flow path and a reaction flow path used in the apparatus according to the embodiment of the present invention are manufactured by blocking.

 Fig. 9 shows the mixing channel and the reaction channel used in the device of the embodiment of the present invention, which were partially made using a tube material and partially made into a block. It is a perspective view of the case.

 FIG. 10 is a perspective view showing an exploded state of a connecting portion between the mixing channel, the annular channel of the reaction channel, and the communication channel shown in FIG.

 FIG. 11 is a system diagram showing a gas reaction apparatus according to one embodiment of the present invention.

FIG. 12 shows a gas reactor and surface modification of another embodiment of the present invention. FIG. 2 is a system diagram showing an apparatus (thin film forming apparatus).

 FIG. 13 is a system diagram showing a gas reaction apparatus and a surface reforming apparatus (thin film forming apparatus) according to another embodiment of the present invention.

 FIG. 14 is a system diagram showing a gas reaction apparatus and a surface reforming apparatus (thin film forming apparatus) according to another embodiment of the present invention.

The first 5 figures at the full B over the first 2 Figure les, Te 0 ₂ (oxygen) and H ₂ 0 (water) and mixing feed the gas to the flow meter 1 3 or et reactor 1 2 Ri By controlling the electric heater 14 by the heater control section 15, the superheated steam generated by heating up to the reaction temperature is sent to the accumulation chamber 17. It is a temperature characteristic diagram in the case. The superheated steam heated to each reaction temperature is used in the accumulation chamber 17 for forming an oxide film on a wafer for a semiconductor as the object 16 to be processed. The superheated steam generated here corresponds to reaction gas A. The explanation of the symbols used in the figure is as follows.

 1 Reactor

 2 Mixing device

 3 Mass outlet, flow meter, etc.

 4 Electric heater, micro wave power, heat induction heating, etc.

 5 Electric heater, micro wave heating, induction heating, burner, etc.

 7 containers

 8 Vacuum pump

 9 Vacuum injector

 1 1 container

 1 2 Gas reactor

 1 3 Mass flow, flow meter, etc.

14 Electric heater, microwave heating, induction heating, panner, etc. 1 5 Heater control section

1 6 Workpiece

1 7 Stack room

2 1 Mixing channel, reaction channel

2 2 Supply channel

 2 3 Drain flow path

 2 4 Annular channel

 2 5 Communication channel

 2 6 Supply side tank

2 7 Discharge side tank

2 8 Inflow port of communication channel

2 9 Communication channel outlet

3 0 Connection port

3 1 Inlet of annular channel 3 2 Outlet of annular channel 5 1 Member

5 2 members

5 3 members

5 4 members

5 5 members

5 6 members

5 7 Members

5 8 Members

 5 9 members

6 0 members Best mode for carrying out the invention

Hereinafter, embodiments of the present invention will be described with reference to the drawings. When the gas as a process gas in Example Ru Oh down Gurley had snare query the gas species, air, N ₂ (nitrogen), 0 ₂ (oxygen), H ₂ (hydrogen), Ar ( General gases such as argon (Argon), He (Hermium), II 20 (Water), CO 2 (Carbon oxide), CO (Carbon oxide), NH ₃ (Ammonia) A), CF ₄ (Te preparative La off Ruo b meth emissions), SF ₆ (six full Tsu sulfur), CH ₄ (meth _{emissions), S i (0 C 2} H 5) 4 ( Te DOO La et It may be a liquefied gas such as Tokishiran) or any mixed gas. The processing gas suitable for the processing purpose can be freely selected from gases other than the above.

 The embodiment shown in FIG. 1 is capable of supplying a plurality of gases to the reactor.

 This embodiment shows a case in which three types of gas A, gas B, and gas C are used. The mass flow 3, mixing device 2, and reactor 1 are connected by piping. Piping is made of metal, ceramic, etc. that can withstand high temperatures.

 The gas A, gas B, and gas C are flow-regulated by each mass flow 3 and sent to each mixing device 2 by the pressure of each gas itself. .

 Any force of gas A, gas B and gas C can be supplied to the reactor by the force S.

 The mixing device 2 is provided with a mixing channel as described in FIG. 7 to FIG. 9 which will be described later in detail.

Each gas enters the tank 26 on the supply side from the supply flow path 22 of the mixing device 2. The gas colliding in the tank 26 passes through the inlets 28 of the plurality of communication passages 25 connected to the tank 26 and flows out of the outlet 2 of the arrest passage. 9 enters the annular channel 24 from the inlet 31 of the first annular channel 24, collides with the wall surface of the annular channel 24, and from a different inlet 31. The entered gas collides.

 Similarly, the high-speed gas flows from the outlet 32 of the first-stage annular channel 24 to the inlet 28 of the plurality of communication channels 25 connected to the annular channel 24. Through the outlet 29 of the communication flow path, it enters the annular flow path 24 through the inflow port 31 of the second-stage annular flow path 24, and enters the annular flow path 24. When the gas collides with the wall, gas from different inlets collides.

 This is repeated in the same manner, so that the fluid flows through the inlets 28 of the plurality of communication channels 25 connected to the final annular channel 2, and the outlet 29 of the communication channel passes through the ports 28. Enter into link 27. The gas colliding with the inner surface of the tank 27 is discharged through the discharge channel 23. At this time, when the plurality of mixing devices 2 installed in the container 6 are heated by the electric heater 4 or the like, the gas A, the gas B, and the gas C in the mixing channel 21 are changed. The gas is heated uniformly by the impinging turbulent motion of the gas. A mixing device 2 that can heat the gas A, gas B, and gas C to just before the reaction temperature of the reaction furnace by adjusting the temperature of the electric heater. The container 6 is made of a metal ceramic or the like that can withstand the high temperature of the electric heater 4.

 Gas A, gas B, and gas C, which have been uniformly heated to a temperature immediately before the reaction temperature, are sent to a reaction furnace 1 installed in a container 7 through a pipe. The reactor 1 and the vessel 7 are made of a metal, ceramic, or the like that can withstand a high reaction temperature. The gas A, gas B, and gas G entering the reactor 1 are further heated by the electric heater 5 and the like in the reactor, and can quickly reach the reaction temperature. .

Instead of electric heater 4 or electric heater 5, use thermal power from a panner such as oil or natural gas, microwave heating, induction heating, etc. You can use it.

 After the reaction is completed, the reaction gas is released out of the reaction furnace 1 by the pressure of the gas itself.

 The embodiment shown in FIG. 2 is the same as the embodiment shown in FIG. 1 except that a vacuum pump 8 is connected to the gas outlet of the reactor 1. 1 Same as the embodiment shown in FIG.

The mass flow 3, the mixing device 2, the reactor 1, and the vacuum pump 8 are surrounded by piping. Piping is made of metal, ceramic, etc. that can withstand high temperatures.

 When the mass flow 3, the mixing device 2, and the reactor 1 are evacuated by the vacuum pump 8, a plurality of gases can be easily mixed with the mass flow 3 from the mass flow device 2. Then, it can flow into the reactor 1.

After the reaction is completed, the reaction gas is sucked out of the reaction furnace by the vacuum pump 8.

 The embodiment shown in FIG. 3 is capable of supplying a plurality of gases to the reactor. This embodiment shows a case in which three types of gas A, gas B, and gas C are used.

 Gas A, Gas: B, Gas C are flow-regulated by each mass flow 3 and one pipe before mixing device 2 by the pressure of each gas itself. And sent to the mixing device 2.

 Any gas of gas A, gas B, and gas C can be supplied to the reactor. The mass flow 3, the mixing device 2, the reaction furnace 1, and the vacuum pump 8 are connected by piping and run. Piping is made of metal, ceramic, etc. that can withstand high temperatures.

When the mass flow 3, the mixing device 2, and the reactor 1 are evacuated by the vacuum pump 8, a plurality of gases can be mixed and mixed easily from the mass flow 3. The flow S can be applied to the reactor 2 and the reactor 1.

The mixing device 2 is provided with a mixing channel as described in FIGS. 7 to 9 described later in detail.

 A plurality of gas A, gas B, and gas C enter the tank 26 on the supply side from the supply flow path 22 of the same mixing device 2. The gas mixture of gas A, gas B, and gas C that collided in the tank 26 passes through the inlets 28 of the plurality of communication passages 25 connected to the tank 26. As a result, the inlet 31 of the first annular flow path 24 from the outflow port 29 of the communication flow path enters the annular flow path 24 through the force, and collides with the wall surface of the annular flow path 24. In addition, the mixed gases entering from different inlets 31 collide with each other.

 Similarly, the high-speed mixing gas flows from the outlet 32 of the first-stage annular channel 24 to the inlet 2 of the plurality of communication channels 25 connected to the annular channel 24. 8, through the outlet port 29 of the communication flow path, through the inlet port 31 of the second-stage annular flow path 24 from the outlet port 29, enters the annular flow path 24 through the inlet port 31, and then enters the annular flow path 24. When the gas collides with the wall of the vehicle, the mixed gas from different inflow loca- tions collide with each other.

 This is repeated in the same manner, so that the fluid flows through the inlets 28 of the plurality of communication channels 25 connected to the final annular channel 24, and from the outlets 29 of the communication channels. Enter tank 27.

 The mixed gas having collided with the inner surface of the tank 27 is uniformly mixed and discharged from the discharge channel 23 and discharged.

When the mixing device 2 installed in the container 6 內 is heated by the electric heater 4, the mixed gas in the mixing channel 21 is uniformly heated by the turbulent motion of the gas. . By adjusting the temperature of the electric heater 14, the temperature of the mixed gas can be heated to just before the reaction temperature of the reactor 1. Mixing device 2 and container 6 are made of metal, ceramic, etc. that can withstand high temperatures. It is produced.

 The mixed gas is uniformly mixed and stirred up to the temperature immediately before the reaction temperature at the same time, and the uniformly heated mixed gas is sent to the reactor 1 installed in the vessel 7 through the pipe. . The reactor 1 and the container 7 are made of a metal, ceramic, or the like that can withstand a high reaction temperature. The mixed gas uniformly heated up to the temperature just before the reaction temperature in the reactor 1 is further heated by the electric heater 5 in the reactor and quickly reaches the reaction temperature. This can be done.

 Instead of electric heater 4 or electric heater 5, it is also possible to use the heat of a panner such as petroleum or natural gas, microwave heating, induction heating, etc. Ray.

After the reaction is completed, the reaction gas is sucked out of the reactor by the vacuum pump 8.

 In the embodiment shown in FIG. 4, a plurality of gases can be supplied to the reactor. The drawing shows the case where three types of gas A, gas B, and gas C are used.

The gas A whose flow rate has been adjusted by the mass flow 3 enters the vacuum injector 9. The mask opening 13, the vacuum injector 9, the mixing device 2, and the reactor 1 are connected by piping. Piping is made of metal, ceramic, etc. that can withstand high temperatures.

Any gas of gas B and gas C connected to the gas A and the vacuum line of the vacuum injector 9 can be supplied to the reactor. Gas B and gas C flow into the mixing device 2 through the vacuum cutter 9 due to the suction force generated when the gas A flows. In this way, even when there is no vacuum pump, it becomes possible to easily flow a plurality of gases into the same mixing device 2. The mixing apparatus 2 is provided with a mixing channel as described in FIGS. 7 to 9 described later in detail.

 The gas A, gas B, and gas C whose flow rates have been adjusted by the respective mass flows 3 are gathered by the vacuum ejector 9 to form the same mixing device 2. Enter tank 26 on the supply side from supply flow path 22. The mixed gas colliding in the tank 26 passes through the inlets 28 of the plurality of communication channels 25 connected to the tank 26, and flows out of the communication channel 25 through the inlets 2 of the communication channels 25. 9 enters the annular channel 24 from the inlet 31 of the annular channel 24 of the first stage, collides with the wall surface of the annular channel 24, and from the different inlet 31. The mixed gases that have entered collide with each other.

 Similarly, the high-speed mixing gas flows from an outlet 32 of the first-stage annular flow path 24 to an inlet of a plurality of communication flow paths 25 connected to the annular flow path 24. , Through the inlet port 31 of the second-stage annular flow path 24 from the outlet port 29 of the communication flow path, and enters the annular flow path 24 through the annular flow path 24. When it collides with the wall surface of No. 4, the mixed gas that has entered from different inlet rockers collides with each other.

This is repeated in the same manner, so that the fluid flows through the inflow ports 28 of the plurality of communication flow paths 25 connected to the final annular flow path 24, and from the outflow ports 29 of the communication flow paths. Enter tank 27. The mixed gas that has collided with the inner surface of the tank 27 is discharged from the discharge channel 23 while being uniformly stirred and mixed.

When the mixing device 2 installed in the vessel 5 is heated by the electric heater 4, the mixed gas in the mixing channel 21 is uniformly heated by the turbulent motion of the gas. It is done. By adjusting the temperature of the electric heater, the temperature of the mixed gas can be heated to just before the reaction temperature of the reactor. The mixing device 2 and the container 6 are made of a metal, ceramic, or the like that can withstand high temperatures. The mixed gas uniformly heated to a temperature immediately before the reaction temperature is sent to a reaction furnace 1 installed in a container 7 through a pipe. The reactor 1 and the vessel 7 are made of a metal, ceramic, or the like that can withstand a high reaction temperature. The mixed gas entering the reactor 1 is further heated by an electric heater 5 in the reactor, and can quickly reach the reaction temperature.

 Instead of the electric heater 4 and the electric heater 5, burners of oil, natural gas, etc., or microwave heating, induction heating, etc. may be used.

 After the reaction is completed, the reaction gas is discharged out of the reaction furnace 1 by the pressure of the gas itself. Incidentally, a vacuum pump may be connected to the gas outlet of the reactor 1 as in the embodiment shown in FIG.

 In the embodiment shown in FIG. 5, it suffices that the plurality of gases be of two or more types.

 The gas A and the gas B are flow-adjusted by the respective mass flows 3 and sent to the mixing device 2 by the pressures of the respective gases themselves. The mass flow 3, mixing device 2, and reactor 1 are connected by piping. Piping is made of metal, ceramic, etc. that can withstand high temperatures.

The mixing device 2 is provided with a mixing channel as described in FIGS. 7 to 9 described later in detail.

Each gas enters the tank 26 on the supply side from the supply flow path 22 of the mixing device 2. The gas colliding in the tank 26 passes through the inlets 28 of the plurality of communication passages 25 connected to the tank 26 and flows out of the outlets 29 of the communication passages. The first stage enters the annular channel 24 from the inlet 31 of the annular channel 24, collides with the wall of the annular channel 24, and enters from a different inlet 31. The gases collide with each other. Similarly, the high-speed gas flows from the outlet 32 of the first annular passage 24 to the inlet 28 of the plurality of communication passages 25 connected to the annular passage 24. Through the outlet 29 of the communicating flow path, enters the annular flow path 24 through the inlet 31 of the second annular flow path 24 from the outlet 29, and enters the wall of the annular flow path 24. At the same time, gas from a different inflow locomotive collides.

 This is repeated in the same manner, and the flow passes through the inflow ports 28 of the plurality of communication flow paths 25 connected to the final annular flow path 24, so that the flow path is changed from the outflow port 29 of the communication flow path to the final flow path. Enter into step 27. The gas colliding with the inner surface of the tank 27 is discharged through the discharge channel 23. When the mixing device 2 installed in the vessel 6 is heated by an electric heater 4 or the like, the gas A and the gas B in the mixing channel 21 are caused by the gas turbulent motion. It is evenly heated. The reaction temperature of gas A and gas B differ by independent temperature control of gas A and gas B electric heaters. It can be heated up to. The mixing device 2 and the container 6 are made of a metal, ceramic or the like that can withstand the high temperature of the electric heater 14.

 Gas A and Gas B, which have been independently heated up to just before the optimal temperature for the reaction in the reactor, are sent to the reactor 1 installed in the vessel 7 through the piping. . The reactor 1 and the vessel 7 are made of a metal, ceramic, or the like that can withstand a high reaction temperature. The gas A and gas B that have entered the reactor 1 are further heated by the electric heater 5 in the reactor and can reach the reaction temperature to the speed and force. .

 Instead of electric heater 4 or electric heater 5, it is possible to use thermal power from a partner such as oil or natural gas, or microwave heating or induction heating. Ray.

After the reaction is completed, the reaction gas is discharged out of the reaction furnace 1 by the pressure of the gas itself. The embodiment shown in FIG. 6 is the same as the embodiment shown in FIG. 5 except that a vacuum pump 8 is connected to the gas outlet of the reactor 1. Otherwise, the embodiment shown in FIG. 5 Same as the embodiment described in FIG.

 The mass flow 3, the mixing device 2, the reaction furnace 1, and the vacuum pump 8 are connected by piping and run. Piping is made of metal, ceramic, etc. that can withstand high temperatures.

 If the mass flow 3, the mixing device 2, and the reactor 1 are evacuated by the vacuum pump 8, the gas A and gas B can be easily mixed with the mass flow 3. It can be flowed to the joint device 2 and the reaction furnace 1.

After the reaction is completed, the reaction gas is sucked out of the reaction furnace by the vacuum pump 8.

 7 to 10 show the mixing flow path used in the mixing apparatus 2 of each of the above embodiments and the reaction flow used in the gas reaction apparatus 12 of each of the embodiments shown in FIG. 11 and below. It shows the specific structure of the road. When used in the gas reactors of the embodiments shown in Fig. 11 and below, the term "reaction channel" is used because the reaction takes place in the channel, but the configuration of the channel is mixed. It is similar to a channel. Hereinafter, the case of a mixing channel will be described, but if the mixing channel is replaced with a reaction channel, the description of the reaction channel will be made.

 FIG. 7 is a perspective view of a case where the mixing channel used in the apparatus of the above-mentioned embodiments of the present invention is manufactured by piping.

 Tubing is made of, for example, metal or ceramic.

The mixing device 2 of the present embodiment includes a mixing channel 21, a supply channel 22 for supplying gas to the mixing channel 21, and a discharge channel 23 for discharging the gas. The mixing flow path 21 includes an annular flow path 24 and a communication flow path 25, a tank 26 for introducing gas from the supply flow path 22 into the communication flow path 25, and a communication flow path. 25 Tank for introducing gas from 5 into discharge channel 23 Yes. Each of the annular flow paths is provided with an inlet 31 and an outlet 32 of the annular flow path, and the inlet 31 is connected to an outlet 29 of the communication flow path. The inflow port 28 of the communication flow path is connected to the outflow port 32 of the flow path.

Any number of one or more annular channels may be used. The number of communication channels may be any number of 2 or more. In the embodiment of the present invention, the one shown in FIG. 7 uses 5 annular passages and 6 communication passages.

 In FIG. 8, the annular flow path is 2 and the communication flow path is 6 and the one in FIG. 9 is the annular flow path 1 and the communication flow path is 4. Review using

 FIG. 8 is a view showing a gas mixing device and a gas mixing device used in a gas reaction device according to an embodiment of the present invention, which are manufactured by blocking the mixing channel.

 In the figure, the mixing channel is manufactured by sequentially connecting the member 51 to the member 58. The members 54 and 56 are cylindrical members as shown in the figure, but a convex portion is provided in the center of the adjacent members 55 and 57, and the other The annular flow paths 24, 24 are formed by the members adjacent to each other. Each of the members 53, 55, and 57 is provided with a communication channel 25 having an inlet 28 and an outlet 29. Further, the members 57 and 58 form the supply-side tank 26, and the members 51, 52 and 53 form the discharge-side tank 27.

The inflow port 28 of the communication channel 25 of the member 53 becomes the outlet 32 of the annular channel 24 formed by the members 53, 54, 55, and the connection of the member 55. The outlet 29 of the passage 25 is to be the inlet 31 of the annular passage. Also, the inlet 28 of the communication flow path 25 of the member 55 becomes the outlet 32 of the annular flow path 24 formed by the members 55, 56, 57. The outlet 29 of the communication channel 25 of the member 57 serves as the inlet 31 of the annular channel.

 It should be noted that the supply side and the discharge side may be reversed.

 Fig. 9 shows a gas mixing device used in one embodiment of the present invention, in which a mixing channel used in a gas reaction device was partially made into a tube and partially made into a block. FIG.

In the case of FIG. 9, the mixing flow path is manufactured by sequentially connecting members 51 to 50 to the member 60. Although the member 56 is a cylindrical member as shown in the figure, a convex portion is provided at the center of the adjacent member 57, and this and the other adjacent member 5 are provided. 5 Tsu by the annular channel 2 ⁴ that have One Do Ni Let 's is that is formed. The members 53, 55, 57, and 59 are provided with connection holes 30 for communicating with the communication flow passages. Further, the members 59 and 60 form a tank 26 force S on the supply side, and the members 51, 52 and 53 form a tank 27 on the discharge side. The member 54 and the member 58 serve as a communication channel 25 having an inlet 28 and an outlet 29.

 The connection port 30 of the member 55 becomes the outlet port 32 of the annular channel 24, and the connection port 30 of the member 57 becomes the inlet port 31 of the annular channel 24. It is.

 Of course, the supply side and the discharge side may be reversed.

Fig. 8 In the mixing flow path shown in Fig. 9, the method of engraving the flow path in a material such as ceramic or metal, squeezing the metal plate, A method of cooling and solidifying fluids such as foreign matter and glass by using a mold, etc., excluding only the space in the flow path. A fluid such as ceramics is pressed and solidified from the outside except for the space in the channel, dried, or sintered, and then solidified. There is a method of forming a flow path by using such a method. In addition, in the configuration shown in Fig. 9, a part of the pipe is used to facilitate the manufacture of the communication channel. This makes it possible to mass-produce the mixing flow path and reduce the cost of the apparatus. At the same time, it is possible to reduce the size of the device by reducing the size of the mixing channel. Also, compared to the case where all parts are block-formed, it is possible to create a small-sized product that can easily be mass-produced while maintaining the heat exchange performance. An example of use in the embodiment shown in FIG. 11 is that CO (—carbon oxide) is produced by the reaction of a mixed gas of CH ₄ (methane) and H ₂₀ (steam). The production of gas mixture of H ₂ (hydrogen) becomes possible, and the reforming of CH ₄ (methane) becomes possible. The reaction of a mixed gas of H ₂ (hydrogen) and CO (—carbon oxide) enables the synthesis of CH ₃ OH (methanol).

 Various chemical reaction products can be produced by a combination of various other processing gases.

 The gas reactor 12 and the mass flow 13 are connected by piping and run. The flow rate of gas A is adjusted by the mass flow 13, sent to the gas reactor 12 by the pressure of the gas itself, and calorifically heated by the electric heater 14. It is. The electric heater 14 is temperature-controlled by a heater control unit 15.

 The reaction gas A from the gas reactor 12 is supplied to the point of use by piping or the like. The piping is made of metal, ceramic, etc. that can withstand high temperatures.

In the embodiment shown in FIG. 12, the reaction gas generated by the gas reaction device shown in FIG. 11 is supplied to the material surface of the object 16 in the accumulation chamber 17 to be processed. Form a thin film on the surface of the body 7 to improve strength (abrasion resistance, hardness, etc.) ゃ improve environmental resistance (corrosion resistance, heat resistance, etc.) Insulation, magnetism, etc.) can be imparted. Is a use example, the reaction gas or the N ₂ (nitrogen), nitride of N ₂ (nitrogen) and NH ₃ (A down mode Yoo A) mixed Ri by the reaction gas to be processed, The film can be formed, and the strength of parts and tools can be improved. It can also be used for the formation of nitride films on semiconductor wafers.

N 2 (nitrogen) and Ar (A Le Gore-down), etc. of the reaction gas, was or, N ₂ (nitrogen), Ar (A Le Gore-down), CF ₄ (Te door La full O Russia menu ) And SF ₆ (sulfur hexafluoride) can be used to clean the surface of the object to be treated, and the surface of components and tools can be cleaned. can do . In addition, cleaning of the surface of semiconductor wafers and glass substrates can be performed.

Also, Ar Ri by the and (A Le Gore-down) and CH ₄ this Ru use physicians the reaction gas of the mixed gas of (meth emissions), etc., part product This will allow for some carburizing of tooling Abrasion resistance Surface hardening becomes possible.

H ₂ 0 (water), have Ru Oh is H ₂ 0 (water) and H ₂ (hydrogen), and water (H ₂ 0)

0 ₂ mixed gas, etc. steam force et al that forms by Ri onset in and this you heating the (oxygen) This will allow for some generation of oxide film, c E hard, etc. oxide film for a semiconductor It is used for molding.

_{Si (C 2 H 5 0)} 4 ( Te preparative La et key Sorted sheet run-) reaction gas forces these are © e Doha chromatography, etc. as a protective film for a semiconductor, insulating film, etc. functions It is possible to form a thin film having the following properties.

The gas reactor 12 and the mass flow 13 are connected by piping. The flow rate of the gas A is adjusted by the mass flow 13, sent to the gas reactor 12 by the pressure of the gas itself, and added by the electric heater 14. It gets heated. The electric heater 14 is temperature-controlled by a heater control unit 15. The reaction gas A heated to the reaction temperature in the gas reaction device 12 is supplied to the accumulation chamber 17 through the pipe by the pressure of the gas itself, and is supplied to the accumulation chamber 17. The object is sent up to the object 16 set to. Piping is made of metal, ceramic, etc. that can withstand high temperatures. In the accumulation chamber 17, since heating of the gas is not particularly required, the surface of the object 16 can be reformed as it is. For this reason, the object 16 can be surface-modified at a low temperature. In addition, the accumulation chamber 17 can be manufactured even if it is not made of a high-temperature-resistant material such as the container 11, and it is not always necessary to maintain a vacuum degree. Since a reactor is not required, the energy consumed in the reactor at the same time is not required.

 In this flow, surface modification treatment in an open system is possible, and continuous treatment of the object 16 under atmospheric pressure becomes possible.

After the surface treatment of the object 16 is completed, the reaction gas is exhausted out of the accumulation chamber 17 by the pressure of the gas itself.

 In each of the embodiments shown in FIGS. 11 and 12, the gas reaction apparatus is used.

12 is provided with a gas reaction flow channel similar to that described in FIGS. 7 to 10 described in detail above as the structure of the mixing flow channel.

 The gas A enters the tank 26 on the supply side from the supply flow path 22 of the gas reaction apparatus 12. The gas A colliding in the tank 26 passes through the inflow ports 28 of the plurality of communication flow paths 25 connected to the tank 26, and flows out of the outflow port 2 of the communication channel. 9 From the inlet 31 of the first annular passage 24, the liquid enters the annular passage 24 from the inlet 31, collides with the wall surface of the annular passage 24, and has a different inlet.

3 1 Gas A, who came in, collided.

Similarly, the high-speed gas is supplied from the outlet 32 of the first annular flow path 24 to the inlet 2 of the plurality of non-connected flow paths 25 connected to the annular flow path 24. 8 through the outlet of the communication channel 2 9 and the inflow of the second annular channel 24 from the 9 The gas A enters the annular channel 24 through the port 31, collides with the wall of the annular channel 24, and the gas A enters from a different inlet. . This is repeated in the same manner to pass through the inflow ports 28 of the plurality of communication flow paths 25 connected to the final annular flow path 24, and through the outflow ports 29 of the communication flow paths. Enter tank 27. The gas A colliding with the inner surface of the tank 27 is discharged from the discharge channel 23.

 When the gas reactor 12 installed in the vessel 11 is heated by an electric heater 14 or the like, the gas A in the flow path 21 becomes impinging turbulent motion of the gas. As a result, a large amount of reaction gas with uniform mixing and uniform temperature can be generated efficiently. The electric heater 14 is controlled to a temperature appropriate for the reaction by the heater control unit 15.

 The gas reactor 12 and the container 11 are made of metal, ceramic, etc., which can withstand the high temperature of the electric heater 14.

 The reactivity of gas A can be controlled by adjusting the number of stages in the annular flow path and the temperature of the electric heater.

 In place of the electric heater 14, heat from a burner such as oil or natural gas, or microwave heating or induction heating may be used. If it is not particularly necessary to control the temperature of the reaction gas, various exhaust heats from engines, fuel cells, and other power sources can be used.

 The embodiment described in Fig. 13 is the same as the embodiment described in Fig. 12 except that a plurality of accumulation chambers 17 are provided in the embodiment described in Fig. 12.

 Since a large amount of reaction gas can be generated due to the characteristics of the gas reactor 12, the same type of gas in each accumulation chamber can be treated by a single gas reactor 12 in different types of processing. Surface modification treatment of the body becomes possible.

The embodiment described in FIG. 14 is the same as the embodiment shown in FIG. This is a system that enables the surface modification of the object 16 even if the accumulation chamber 17 is omitted by using the object 16. As an example, a reaction gas from a gas reactor 12 is directly supplied to the inner surface of a workpiece 16 such as a single pipe or a plurality of pipes to improve the inner surface of the pipe. Quality, and the strength (abrasion resistance, hardness, etc.) of only the necessary parts ゃ Improve the environmental resistance (corrosion resistance, heat resistance, etc.) and improve the function (conductive, insulating) , Magnetism, etc.). According to this method, it becomes possible to make the surface modification selectively only in the portion that requires the function or the function, if the accumulation chamber 17 is not required.

 The gas reaction apparatus of the embodiment shown in FIGS. 11 to 14 is provided with the gas reaction flow path shown in FIG. 10 and FIG. 10. . The configuration of the gas reaction channel is the same as the configuration of the mixing channel used in the gas mixing device. The situation in which gas flows through the inside is the same as that described for the embodiment of the gas mixing apparatus described in FIGS. 1 to 6. . Industrial availability

 As described above, the gas mixing device, the gas reaction device, and the surface reforming device according to the present invention are used as devices for mixing and reacting gases in various applications, and are used to reform the surface of a material. Gas mixing equipment, gas reaction equipment, semiconductor wafers, glass substrates, etc., which are particularly useful in chemical reaction processes and semiconductor manufacturing processes. It is suitable for a surface reforming device used for surface treatment of parts and for surface treatment of parts and tools.

Claims

The scope of the claims 1. The annular channel that communicates in the circumferential direction, and the positions of the inlet and outlet in this annular channel are shifted in the circumferential direction as described above. A plurality of inlets and outlets formed in the flow channel and a plurality of inlets and outlets formed in the annular flow passage communicating with the inlet or the outlet described above. A gas mixture having a mixed flow path composed of a number of communication flow paths, and a supply flow path and a discharge flow path of a fluid connected to the mixed flow path. Joint equipment.  2.A plurality of annular flow passages arranged in parallel and communicating in the circumferential direction, and the positions of the inlet and the outlet in this annular flow passage are shifted in the circumferential direction. A plurality of communication channels connecting the plurality of inflow ports and outflow ports formed in the annular flow path and the inflow port and the outflow port formed in different annular flow paths. A gas mixing device, comprising: a mixing flow path formed as described above; and a supply flow path and a discharge flow path of a fluid connected to the mixing flow path.  3. Gas mixing device according to claim 1 or 2, wherein the gas supply device is connected to the supply channel.  4. The gas mixing apparatus according to claim 1, 2, or 3, further comprising a heating means for heating the mixing channel.  5. Claims 1, 2, 3, or 4 in which a gas outlet of a vacuum ejector that flows in a plurality of gases and discharges a mixed gas is connected to the supply flow path. Gas mixing device.  6. A gas reactor in which a gas reactor is connected to the discharge channel of the gas mixing device according to claim 1, 2, 3, 4 or 5.  7. The gas reaction apparatus according to claim 6, wherein a pump is connected to a reaction gas discharge port of the gas reaction furnace. 8. Circumferentially communicating annular flow path and inlet in this annular flow path And a plurality of inlets and outlets formed in the annular flow path such that the positions of the outlet and the outlet are shifted in the circumferential direction; and the inlet or the outlet formed in the annular flow path. A gas reaction flow path composed of a plurality of communication flow paths communicating with the outlet, and a supply flow path and a discharge flow path of a fluid connected to the gas reaction flow path. Equipped gas reactor.  9. A plurality of annular-flow paths which are arranged in parallel and communicate with each other in the circumferential direction, and the positions of the inlet and the outlet in this annular flow path are shifted in the circumferential direction. A plurality of inflow ports and outflow ports formed in the annular flow path, and a plurality of communication flows in which the inflow port and the outflow port formed in different annular flow paths communicate with each other. A gas reaction device comprising: a gas reaction flow path serving as a flow path; and a supply flow path and a discharge flow path of a fluid connected to the gas reaction flow path. 10. A gas reactor according to claims 8 or 9, wherein a tank is connected to the gas supply flow path.  11. The gas reaction apparatus according to claim 8, 9 or 10, wherein a tank is connected to a gas discharge flow path.  12. The gas reaction apparatus according to claim 8, 9, 10, or 11, further comprising a heating means for heating the gas reaction flow path.  13. The gas reaction apparatus according to claim 8, 9, 10, 11, or 12, wherein a means for supplying gas to the gas reaction flow path is provided.  14. A surface reformer in which the discharge channel of the gas reactor described in claim 6, 7, 8, 9, 10, 11, 12, or 13 is connected to the accumulation chamber. .