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WO2002035699A1 - Oscillateur asservi en tension, notamment pour appareils de telephonie mobile - Google Patents

Oscillateur asservi en tension, notamment pour appareils de telephonie mobile Download PDF

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Publication number
WO2002035699A1
WO2002035699A1 PCT/DE2001/003611 DE0103611W WO0235699A1 WO 2002035699 A1 WO2002035699 A1 WO 2002035699A1 DE 0103611 W DE0103611 W DE 0103611W WO 0235699 A1 WO0235699 A1 WO 0235699A1
Authority
WO
WIPO (PCT)
Prior art keywords
voltage
controlled oscillator
mems
capacitor
inductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/DE2001/003611
Other languages
German (de)
English (en)
Inventor
Bernd Bienek
Dietmar Gapski
Xihe Tuo
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens AG
Siemens Corp
Original Assignee
Siemens AG
Siemens Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens AG, Siemens Corp filed Critical Siemens AG
Publication of WO2002035699A1 publication Critical patent/WO2002035699A1/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
    • H03B5/00—Generation of oscillations using amplifier with regenerative feedback from output to input
    • H03B5/08—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance
    • H03B5/12—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device
    • H03B5/1237—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device comprising means for varying the frequency of the generator
    • H03B5/124—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device comprising means for varying the frequency of the generator the means comprising a voltage dependent capacitance
    • H03B5/1243—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device comprising means for varying the frequency of the generator the means comprising a voltage dependent capacitance the means comprising voltage variable capacitance diodes
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
    • H03B5/00—Generation of oscillations using amplifier with regenerative feedback from output to input
    • H03B5/08—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance
    • H03B5/12—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device
    • H03B5/1237—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device comprising means for varying the frequency of the generator
    • H03B5/1262—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device comprising means for varying the frequency of the generator the means comprising switched elements
    • H03B5/1265—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device comprising means for varying the frequency of the generator the means comprising switched elements switched capacitors

Definitions

  • the invention relates to a voltage-controlled oscillator (VCO), in particular for mobile radio devices, with an oscillating circuit formed by electronic components, which can be tuned by an adjusting element.
  • VCO voltage-controlled oscillator
  • Voltage-controlled oscillators primarily serve to generate vibrations of certain curve shapes, for example sine, rectangle, triangle, sawtooth and pulse.
  • voltage-controlled oscillators are used which have a tunable resonant circuit consisting of inductors (L) and capacitors (C) which are generally connected in parallel.
  • inductors L
  • C capacitors
  • varactor diodes are usually used, which are connected as a pair in a cathode-cathode arrangement in order to at least partially eliminate non-linearities of the capacitance-voltage curve. As a result, however, there is a lower harmonic content.
  • a broadband frequency range and a low phase look is especially in connection with the increasingly widespread mobile devices, such as mobile phones according to the currently coexisting mobile radio standards GSM (Global System for Mobile Communication), DCS1800 (Digital Cellular System), UMTS (Universal Mobile Telecommunication System), D-AMPS (Digital Advanced Mobile Phone System), IS-95, or IS-136 of particular importance.
  • GSM Global System for Mobile Communication
  • DCS1800 Digital Cellular System
  • UMTS Universal Mobile Telecommunication System
  • D-AMPS Digital Advanced Mobile Phone System
  • IS-95 IS-95
  • IS-136 Digital Advanced Mobile Phone System
  • This working mostly in frequency ranges of 900 MHz, 1800 MHz and 1900 MHz cellular systems require well as digi ⁇ tale cordless phones based on the DECT (Digital En- hanced Cordless System) with frequencies at 1700 MHz a wide tuning range.
  • DECT Digital En- hanced Cordless System
  • the invention has for its object to provide a voltage-controlled oscillator with which a broadband frequency range and a low phase noise can be realized in a simple manner.
  • the adjusting element comprises a capacitor-based micro-electro-mechanical system.
  • MEMS micro-electromechanical system
  • the electronic components are mostly made by semiconductor technologies, such as CMOS, bipolar or BICMOS process, whereas the micro-mechanical components are produced by micromachining processes, such as, for example, the area-based etching of the silicon carrier to remove or add structural and functional layers. Accordingly, MEMS are systems that can be used in a wide variety of areas.
  • MEMS-C micro-electromechanical system which is made to work as a capacitor in the sense of the present invention, hereinafter referred to as MEMS-C, is an electrically controlled component which changes the capacitance between its connections by a mechanical change in the geometry.
  • MEMS-C itself is known, so that reference is made to the state of the art with regard to the structure and mode of operation of the MEMS-C.
  • a MEMS-C according to the invention as a component of the setting element of a voltage-controlled oscillator, which enables a broadband frequency range and a low phase noise, makes it possible to considerably simplify the construction of an oscillator and thus to ensure cost-effective production.
  • the RF signal and the DC connection are separated from one another in the MEMS-C, non-elements of the capacitance-voltage curve have no harmful effects on the effectiveness of the phase noise.
  • the MEMS-C has a better quality factor than conventional varactor diodes.
  • the quality factor of the MEMS-C at 1.5 GHz is more than 100 compared to about 40 of a varactor diode, with the result that, in contrast to the use of varactor diodes, no complex designs are required with regard to the required phase noise ,
  • the MEMS-C has a wide tuning range, including game from 0.5 pF to 10.0 pF or more, resulting in a simple manner, a broadband voltage controlled Os ⁇ zillator let realize, without the Q factor m certain ranges of values to be reduced.
  • adjusting element is additionally provided with a varactor diode in order to take into account the most varied requirements which are placed on voltage-controlled oscillators in practice.
  • the requirements that are placed on voltage-controlled oscillators, which, as in the present case, can be broadband tuned, stem primarily from the fact that such oscillators have a high tuning steepness.
  • This tuning element can be, for example, another MEMS-C or - as described above - a capacitance diode. The latter has the additional advantage that capacitance diodes have a large good for small tuning steepnesses.
  • the adjusting element can also be expedient to provide the adjusting element with a micro-electromechanical system switch, MEMS switch, which takes advantage of the advantages of MEMS technology, for example in order to be able to specifically change the inductive part of the resonant circuit.
  • MEMS switch micro-electromechanical system switch
  • the voltage-controlled oscillator as a high-performance oscillator.
  • an oscillator with low noise can also be implemented in the RF or microwave frequency range.
  • the reason for this is that the noise of the oscillator away from the carrier mainly through the Quality of the resonator is determined.
  • a very high power level is then stored in the resonant circuit, which ensures a high distance from the background noise. Because of the high power, it is necessary that the individual components of the resonant circuit are suitable for carrying out high-voltage vibrations.
  • Fig. La is a schematic diagram of a known voltage controlled oscillator with a pair of varactor diodes, which are located in a cathode-cathode arrangement;
  • 1b shows a schematic circuit diagram of a known voltage-controlled oscillator with a capacitor and resonator controlled by switches
  • 1c shows a schematic circuit diagram of a known voltage-controlled oscillator with varactor diodes connected in parallel;
  • FIG. 2 shows a schematic circuit diagram of a voltage-controlled oscillator according to the invention with a MEMS-C
  • Fig. 3 is a schematic diagram of the oscillator of FIG. 2 with an additional varactor diode and
  • FIG. 4 shows a schematic circuit diagram of the oscillator according to FIG. 3 with an additional MEMS switch.
  • La to 1c embodiments of known voltage-controlled oscillators are shown.
  • the oscillator according to FIG. 1 a has an oscillating circuit which consists of a capacitor 1 and a resonator designed as an inductor 2, which are connected in parallel and connected to ground.
  • an adjusting member is provided which extends from a voltage source to a DC clamping ⁇ 3 of, for example, - 8.0 V composed connected pair of varactor diodes 4 to 0.5 V or more.
  • the varactor diodes 4 are located in a cathode-cathode arrangement which is connected in parallel with the capacitor 1 and the inductor 2 and is likewise connected to ground, so that a negative tuning voltage is present in the resonator branch at the voltage specified above.
  • the varactor diodes 4 can alternatively also be connected to the DC voltage source 3 in a manner known per se via further electronic components, such as adjustable resistors or further capacitors, in order to achieve a desired tuning behavior.
  • the voltage-controlled oscillator also referred to below as the VCO
  • the VCO also has a remaining part 5, which is only indicated in the drawings and contains other electronic components required for the functioning of the VCO in a manner known per se.
  • the voltage-controlled oscillator according to FIG. 1b differs from that according to FIG. La mainly in that an additional capacitor 1 is provided and both the capacitors 1 and the inductor 2 can be controlled via switches 6a and 6b.
  • the inductor 2 has a tap which is switched on by the switch 6b is connectable to ground.
  • the voltage-controlled oscillator according to FIG. 1c has three pairs of varactor diodes 4, which are each in a cathode-cathode arrangement and are connected in parallel with the capacitor 1 and the inductor 2.
  • FIGS. 2 to 4 show various embodiments of a voltage-controlled oscillator, in which the setting element has a capacitor-supported micro-electromechanical system 7, MEMS-C, which is known per se.
  • MEMS-C micro-electromechanical system 7
  • the MEMS-C 7 also takes over the function of the capacitor 1 of the VCO according to FIGS. 1 a to 1 c.
  • the MEMS-C 7 is connected on the one hand to the DC voltage source 3 and on the other hand to ground and is connected in parallel to the resonator designed as an inductor 2.
  • Resonators designed as power resonators or MEMS resonators can also be used as resonators.
  • the inductor 2, which is also connected to ground, has a tap which can also be connected to ground by the switch 6b.
  • the inductor 2 is provided with two taps, each of which can be connected to ground via switch 6b.
  • a pair of varactor diodes 4 which are connected in a cathode-cathode arrangement, are connected in parallel between the MEMS-C 7 and the inductor 2 and are connected to a second DC voltage source 3.
  • a line section between the MEMS-C 7 and the inductor 2 can be connected to ground via a first capacitor 1 by means of a micro-electromechanical system switch 8, MEMS switch.
  • the MEMS switch makes it possible lent to specifically change the inductive part of the resonant circuit.
  • the MEMS-C 7 and inductor 2 located in series are connected in parallel to a second capacitor 1 and a varactor diode 4 and connected to the remaining part 5 of the VCO via a third capacitor 1.
  • the MEMS-C 7 is connected to a first DC voltage source 3, whereas both the varactor diode 4 and the second capacitor 1 and the inductor 2 are connected to a second DC voltage source 3.
  • the MEMS-C 7 as an adjustment element, which results in an uncomplicated design of the VCO. Since the MEMS-C 7 also has a high Q factor and a wide tuning range, a targeted design of the broadband and low phase noise ensuring VCO can be realized. As described, the MEMS-C can also be combined with a conventional varactor diode and a switch, such as the MEMS switch described above, depending on the application. Last but not least, it is then possible to achieve an oscillator topology which has the function of known oscillators, such as Colpitts oscillators, but is considerably simplified in terms of its design.

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Inductance-Capacitance Distribution Constants And Capacitance-Resistance Oscillators (AREA)

Abstract

L'invention concerne un oscillateur asservi en tension, notamment pour des appareils de téléphonie mobile, qui comprend un circuit oscillant constitué de composants électroniques et pouvant être accordé par un élément d'ajustement. L'invention vise à obtenir de manière simple, pour ce type d'oscillateur asservi en tension, une gamme de fréquences à large bande et un faible bruit de phase. A cet effet, l'élément d'ajustement est muni d'un système micro-électromécanique (7) à condensateur protégé.
PCT/DE2001/003611 2000-10-26 2001-09-19 Oscillateur asservi en tension, notamment pour appareils de telephonie mobile Ceased WO2002035699A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE10053216A DE10053216A1 (de) 2000-10-26 2000-10-26 Spannungsgesteuerter Oszillator, insbesondere für Mobilfunkgeräte
DE10053216.0 2000-10-26

Publications (1)

Publication Number Publication Date
WO2002035699A1 true WO2002035699A1 (fr) 2002-05-02

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/DE2001/003611 Ceased WO2002035699A1 (fr) 2000-10-26 2001-09-19 Oscillateur asservi en tension, notamment pour appareils de telephonie mobile

Country Status (2)

Country Link
DE (1) DE10053216A1 (fr)
WO (1) WO2002035699A1 (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2005076480A1 (fr) * 2004-02-03 2005-08-18 Nokia Corporation Stabilisation de la frequence d'un oscillateur de reference

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1383238A1 (fr) 2002-07-16 2004-01-21 Lucent Technologies Inc. Dispositif à résistance négative accordable
EP1383234B1 (fr) * 2002-07-16 2010-03-17 Lucent Technologies Inc. Varactor ayant une gamme d'accordablité étendue

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5872489A (en) * 1997-04-28 1999-02-16 Rockwell Science Center, Llc Integrated tunable inductance network and method
US5880921A (en) * 1997-04-28 1999-03-09 Rockwell Science Center, Llc Monolithically integrated switched capacitor bank using micro electro mechanical system (MEMS) technology
US6094102A (en) * 1999-04-30 2000-07-25 Rockwell Science Center, Llc Frequency synthesizer using micro electro mechanical systems (MEMS) technology and method

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5696662A (en) * 1995-08-21 1997-12-09 Honeywell Inc. Electrostatically operated micromechanical capacitor
US5959516A (en) * 1998-01-08 1999-09-28 Rockwell Science Center, Llc Tunable-trimmable micro electro mechanical system (MEMS) capacitor
US5994982A (en) * 1997-07-18 1999-11-30 Trw Inc. MEMS switched resonators for VCO applications
US6074890A (en) * 1998-01-08 2000-06-13 Rockwell Science Center, Llc Method of fabricating suspended single crystal silicon micro electro mechanical system (MEMS) devices
DE19844142C2 (de) * 1998-09-25 2002-04-18 Siemens Ag Programmierbarer HF-Block

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5872489A (en) * 1997-04-28 1999-02-16 Rockwell Science Center, Llc Integrated tunable inductance network and method
US5880921A (en) * 1997-04-28 1999-03-09 Rockwell Science Center, Llc Monolithically integrated switched capacitor bank using micro electro mechanical system (MEMS) technology
US6094102A (en) * 1999-04-30 2000-07-25 Rockwell Science Center, Llc Frequency synthesizer using micro electro mechanical systems (MEMS) technology and method

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2005076480A1 (fr) * 2004-02-03 2005-08-18 Nokia Corporation Stabilisation de la frequence d'un oscillateur de reference
US7248128B2 (en) 2004-02-03 2007-07-24 Nokia Corporation Reference oscillator frequency stabilization

Also Published As

Publication number Publication date
DE10053216A1 (de) 2002-05-16

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Legal Events

Date Code Title Description
DFPE Request for preliminary examination filed prior to expiration of 19th month from priority date (pct application filed before 20040101)
121 Ep: the epo has been informed by wipo that ep was designated in this application
122 Ep: pct application non-entry in european phase
NENP Non-entry into the national phase

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