WO2002033725A3 - Systeme et procede permettant de reguler rapidement la production d'une source d'ions en vue d'une implantation ionique - Google Patents
Systeme et procede permettant de reguler rapidement la production d'une source d'ions en vue d'une implantation ionique Download PDFInfo
- Publication number
- WO2002033725A3 WO2002033725A3 PCT/US2001/051033 US0151033W WO0233725A3 WO 2002033725 A3 WO2002033725 A3 WO 2002033725A3 US 0151033 W US0151033 W US 0151033W WO 0233725 A3 WO0233725 A3 WO 0233725A3
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- ion
- filament
- chamber
- ion source
- generation
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Ceased
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J27/00—Ion beam tubes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J27/00—Ion beam tubes
- H01J27/02—Ion sources; Ion guns
- H01J27/022—Details
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
- H01J37/08—Ion sources; Ion guns
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/30—Electron or ion beam tubes for processing objects
- H01J2237/317—Processing objects on a microscale
- H01J2237/31701—Ion implantation
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Combustion & Propulsion (AREA)
- Analytical Chemistry (AREA)
- Electron Sources, Ion Sources (AREA)
Abstract
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| AU2002231361A AU2002231361A1 (en) | 2000-10-20 | 2001-10-19 | System and method for rapidly controlling the output of an ion source for ion implantation |
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US24228800P | 2000-10-20 | 2000-10-20 | |
| US60/242,288 | 2000-10-20 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| WO2002033725A2 WO2002033725A2 (fr) | 2002-04-25 |
| WO2002033725A3 true WO2002033725A3 (fr) | 2003-05-30 |
Family
ID=22914192
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| PCT/US2001/051033 Ceased WO2002033725A2 (fr) | 2000-10-20 | 2001-10-19 | Systeme et procede permettant de reguler rapidement la production d'une source d'ions en vue d'une implantation ionique |
Country Status (3)
| Country | Link |
|---|---|
| US (1) | US7247863B2 (fr) |
| AU (1) | AU2002231361A1 (fr) |
| WO (1) | WO2002033725A2 (fr) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101490792B (zh) * | 2006-07-20 | 2012-02-01 | 阿维扎技术有限公司 | 离子沉积设备 |
Families Citing this family (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6992308B2 (en) * | 2004-02-27 | 2006-01-31 | Axcelis Technologies, Inc. | Modulating ion beam current |
| US7365346B2 (en) * | 2004-12-29 | 2008-04-29 | Matsushita Electric Industrial Co., Ltd. | Ion-implanting apparatus, ion-implanting method, and device manufactured thereby |
| WO2006133041A2 (fr) * | 2005-06-03 | 2006-12-14 | Axcelis Technologies, Inc. | Arret de faisceau et procedes de reglage de faisceau |
| EP2044608B1 (fr) | 2006-07-20 | 2012-05-02 | SPP Process Technology Systems UK Limited | Sources d'ions |
| JP2009545101A (ja) | 2006-07-20 | 2009-12-17 | アビザ テクノロジー リミティド | プラズマ源 |
| US8803110B2 (en) * | 2006-09-29 | 2014-08-12 | Axcelis Technologies, Inc. | Methods for beam current modulation by ion source parameter modulation |
| US7589333B2 (en) * | 2006-09-29 | 2009-09-15 | Axcelis Technologies, Inc. | Methods for rapidly switching off an ion beam |
| US7566887B2 (en) * | 2007-01-03 | 2009-07-28 | Axcelis Technologies Inc. | Method of reducing particle contamination for ion implanters |
| US8134130B2 (en) * | 2010-07-19 | 2012-03-13 | The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration | Ion source with corner cathode |
| US8766209B2 (en) * | 2011-07-21 | 2014-07-01 | Varian Semiconductor Equipment Associates, Inc. | Current limiter for high voltage power supply used with ion implantation system |
| CN114959551B (zh) * | 2022-04-29 | 2023-12-19 | 超微中程纳米科技(苏州)有限公司 | 模具钢刀具离子氮化工艺 |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4754200A (en) * | 1985-09-09 | 1988-06-28 | Applied Materials, Inc. | Systems and methods for ion source control in ion implanters |
| US5262652A (en) * | 1991-05-14 | 1993-11-16 | Applied Materials, Inc. | Ion implantation apparatus having increased source lifetime |
| US20010017353A1 (en) * | 2000-02-25 | 2001-08-30 | Nissin Electric Co., Ltd. | Ion source and operation method thereof |
Family Cites Families (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6011417B2 (ja) * | 1979-10-23 | 1985-03-26 | 株式会社東芝 | ホロ−カソ−ド放電装置 |
| US4684848A (en) * | 1983-09-26 | 1987-08-04 | Kaufman & Robinson, Inc. | Broad-beam electron source |
| US5256947A (en) * | 1990-10-10 | 1993-10-26 | Nec Electronics, Inc. | Multiple filament enhanced ion source |
| US5675152A (en) * | 1996-01-16 | 1997-10-07 | Taiwan Semiconductor Manufacturing Company Ltd. | Source filament assembly for an ion implant machine |
| US6184532B1 (en) * | 1997-12-01 | 2001-02-06 | Ebara Corporation | Ion source |
| EP1245036B1 (fr) * | 1999-12-13 | 2013-06-19 | Semequip, Inc. | Source d'ions |
| US6777686B2 (en) * | 2000-05-17 | 2004-08-17 | Varian Semiconductor Equipment Associates, Inc. | Control system for indirectly heated cathode ion source |
| US6583544B1 (en) * | 2000-08-07 | 2003-06-24 | Axcelis Technologies, Inc. | Ion source having replaceable and sputterable solid source material |
| US6627901B2 (en) * | 2001-01-04 | 2003-09-30 | Nec Electronics, Inc. | Apparatus and method for distribution of dopant gases or vapors in an arc chamber for use in an ionization source |
| GB0128913D0 (en) * | 2001-12-03 | 2002-01-23 | Applied Materials Inc | Improvements in ion sources for ion implantation apparatus |
-
2001
- 2001-10-19 AU AU2002231361A patent/AU2002231361A1/en not_active Abandoned
- 2001-10-19 US US10/032,664 patent/US7247863B2/en not_active Expired - Lifetime
- 2001-10-19 WO PCT/US2001/051033 patent/WO2002033725A2/fr not_active Ceased
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4754200A (en) * | 1985-09-09 | 1988-06-28 | Applied Materials, Inc. | Systems and methods for ion source control in ion implanters |
| US5262652A (en) * | 1991-05-14 | 1993-11-16 | Applied Materials, Inc. | Ion implantation apparatus having increased source lifetime |
| US20010017353A1 (en) * | 2000-02-25 | 2001-08-30 | Nissin Electric Co., Ltd. | Ion source and operation method thereof |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101490792B (zh) * | 2006-07-20 | 2012-02-01 | 阿维扎技术有限公司 | 离子沉积设备 |
Also Published As
| Publication number | Publication date |
|---|---|
| AU2002231361A1 (en) | 2002-04-29 |
| US20020053642A1 (en) | 2002-05-09 |
| US7247863B2 (en) | 2007-07-24 |
| WO2002033725A2 (fr) | 2002-04-25 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP3995089B2 (ja) | 重イオンビームアプリケーションシステムにおいて使用されるイオンビームを予備加速する装置 | |
| WO2002033725A3 (fr) | Systeme et procede permettant de reguler rapidement la production d'une source d'ions en vue d'une implantation ionique | |
| US7459704B2 (en) | Ion source configuration for production of ionized clusters, ionized molecules and ionized mono-atoms | |
| DE69919325D1 (de) | Spektrometer mit gepulster ionenquelle, kopplungsvorrichtung zur dämpfung der ionenbewegung, und methode zur verwendung derselben | |
| WO2002098188A9 (fr) | Ioniseur non producteur de poussiere a decharge de flux d'air ionise | |
| WO2004114358A3 (fr) | Structures de magnetrons minces pour la generation de plasma dans des systemes d'implantation d'ions | |
| SE8700017D0 (sv) | Ion plasma electron gun | |
| US7223984B2 (en) | Helium ion generation method and apparatus | |
| SE8801145D0 (sv) | Ion plasma electron gun with dose rate control via amplitude modulation of the plasma discharge | |
| EP0690473A3 (fr) | Neutraliseur électronique de faisceau d'ions | |
| US5216241A (en) | Fast atom beam source | |
| JPH05121194A (ja) | 高速原子線源 | |
| TW200501346A (en) | Ion doping apparatus, ion doping method and semiconductor device | |
| US5852345A (en) | Ion source generator auxiliary device for phosphorus and arsenic beams | |
| IL51282A (en) | Method of feedback control of electron beam lasers | |
| WO2003036678A3 (fr) | Systemes d'implantation ionique et procedes utilisant une source de gaz en aval | |
| US5404017A (en) | Ion implantation apparatus | |
| JP3949809B2 (ja) | 磁場方向転換装置、この装置を具備する半導体製造設備のイオン発生装置及びこれを利用したイオン形成方法 | |
| JP2007184218A (ja) | イオン注入機のイオン発生装置 | |
| WO2001062053A3 (fr) | Commande active de la temperature des electrons d'une source de plasma a radiofrequence electrostatiquement blinde | |
| JPS63279552A (ja) | イオンビ−ム照射装置 | |
| JPH07192889A (ja) | ビーム発生方法及び装置 | |
| JP2738326B2 (ja) | イオン源及びイオン生成方法 | |
| JP4177149B2 (ja) | 荷電粒子発生装置 | |
| JPH08236056A (ja) | イオン源装置 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| AK | Designated states |
Kind code of ref document: A2 Designated state(s): AE AG AL AM AT AU AZ BA BB BG BR BY BZ CA CH CN CO CR CU CZ DE DK DM DZ EC EE ES FI GB GD GE GH GM HR HU ID IL IN IS JP KE KG KP KR KZ LC LK LR LS LT LU LV MA MD MG MK MN MW MX MZ NO NZ PL PT RO RU SD SE SG SI SK SL TJ TM TR TT TZ UA UG UZ VN YU ZA ZW |
|
| AL | Designated countries for regional patents |
Kind code of ref document: A2 Designated state(s): GH GM KE LS MW MZ SD SL SZ TZ UG ZW AM AZ BY KG KZ MD RU TJ TM AT BE CH CY DE DK ES FI FR GB GR IE IT LU MC NL PT SE TR BF BJ CF CG CI CM GA GN GQ GW ML MR NE SN TD TG |
|
| 121 | Ep: the epo has been informed by wipo that ep was designated in this application | ||
| REG | Reference to national code |
Ref country code: DE Ref legal event code: 8642 |
|
| 122 | Ep: pct application non-entry in european phase | ||
| NENP | Non-entry into the national phase |
Ref country code: JP |