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WO2002016667A3 - Sputtering targets - Google Patents

Sputtering targets Download PDF

Info

Publication number
WO2002016667A3
WO2002016667A3 PCT/US2001/026347 US0126347W WO0216667A3 WO 2002016667 A3 WO2002016667 A3 WO 2002016667A3 US 0126347 W US0126347 W US 0126347W WO 0216667 A3 WO0216667 A3 WO 0216667A3
Authority
WO
WIPO (PCT)
Prior art keywords
sputtering
sputtering target
encompasses
profile
sputtering targets
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/US2001/026347
Other languages
French (fr)
Other versions
WO2002016667B1 (en
WO2002016667A2 (en
Inventor
Jaeyeon Kim
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Honeywell International Inc
Original Assignee
Honeywell International Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US09/643,038 external-priority patent/US6497797B1/en
Application filed by Honeywell International Inc filed Critical Honeywell International Inc
Priority to AU2001286668A priority Critical patent/AU2001286668A1/en
Publication of WO2002016667A2 publication Critical patent/WO2002016667A2/en
Publication of WO2002016667A3 publication Critical patent/WO2002016667A3/en
Publication of WO2002016667B1 publication Critical patent/WO2002016667B1/en
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/3435—Target holders (includes backing plates and endblocks)
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/3414—Targets
    • H01J37/3423—Shape

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)

Abstract

The invention encompasses a method of forming a sputtering target. A wear profile for a sputtering target surface is determined. The wear profile is utilized to generate a desired profile for a sputtering target sputtering surface. A sputtering target is formed having a sputtering surface with the desired profile. The invention also encompasses a sputtering target having several sputtering domains which reflect the magneti type. The invention also encompasses a sputtering target having a sputtering domain which includes an edge region and a central region. The edge region of the sputtering domain is thicker than the central region.
PCT/US2001/026347 2000-08-21 2001-08-21 Sputtering targets Ceased WO2002016667A2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
AU2001286668A AU2001286668A1 (en) 2000-08-21 2001-08-21 Sputtering targets

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US09/643,038 2000-08-21
US09/643,038 US6497797B1 (en) 2000-08-21 2000-08-21 Methods of forming sputtering targets, and sputtering targets formed thereby
US30047301P 2001-06-22 2001-06-22
US60/300,473 2001-06-22

Publications (3)

Publication Number Publication Date
WO2002016667A2 WO2002016667A2 (en) 2002-02-28
WO2002016667A3 true WO2002016667A3 (en) 2002-06-06
WO2002016667B1 WO2002016667B1 (en) 2002-08-01

Family

ID=26971802

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2001/026347 Ceased WO2002016667A2 (en) 2000-08-21 2001-08-21 Sputtering targets

Country Status (2)

Country Link
AU (1) AU2001286668A1 (en)
WO (1) WO2002016667A2 (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6348113B1 (en) 1998-11-25 2002-02-19 Cabot Corporation High purity tantalum, products containing the same, and methods of making the same

Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6199674A (en) * 1984-10-22 1986-05-17 Hitachi Ltd sputter electrode
JPS6342369A (en) * 1986-08-08 1988-02-23 Fujitsu Ltd Sputtering treatment device
JPH01132757A (en) * 1987-11-17 1989-05-25 Hitachi Metals Ltd Production of co-ni-cr system alloy target material
US5215639A (en) * 1984-10-09 1993-06-01 Genus, Inc. Composite sputtering target structures and process for producing such structures
JPH06306597A (en) * 1993-04-23 1994-11-01 Mitsubishi Materials Corp Ti target material for magnetron sputtering
US5428882A (en) * 1993-04-05 1995-07-04 The Regents Of The University Of California Process for the fabrication of aluminum metallized pyrolytic graphite sputtering targets
JPH0860353A (en) * 1994-08-24 1996-03-05 Ulvac Japan Ltd Sputtering cathode
JPH08325719A (en) * 1995-05-29 1996-12-10 Sony Corp Sputtering device
US6068742A (en) * 1996-07-22 2000-05-30 Balzers Aktiengesellschaft Target arrangement with a circular plate, magnetron for mounting the target arrangement, and process for coating a series of circular disc-shaped workpieces by means of said magnetron source

Patent Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5215639A (en) * 1984-10-09 1993-06-01 Genus, Inc. Composite sputtering target structures and process for producing such structures
JPS6199674A (en) * 1984-10-22 1986-05-17 Hitachi Ltd sputter electrode
JPS6342369A (en) * 1986-08-08 1988-02-23 Fujitsu Ltd Sputtering treatment device
JPH01132757A (en) * 1987-11-17 1989-05-25 Hitachi Metals Ltd Production of co-ni-cr system alloy target material
US5428882A (en) * 1993-04-05 1995-07-04 The Regents Of The University Of California Process for the fabrication of aluminum metallized pyrolytic graphite sputtering targets
JPH06306597A (en) * 1993-04-23 1994-11-01 Mitsubishi Materials Corp Ti target material for magnetron sputtering
JPH0860353A (en) * 1994-08-24 1996-03-05 Ulvac Japan Ltd Sputtering cathode
JPH08325719A (en) * 1995-05-29 1996-12-10 Sony Corp Sputtering device
US6068742A (en) * 1996-07-22 2000-05-30 Balzers Aktiengesellschaft Target arrangement with a circular plate, magnetron for mounting the target arrangement, and process for coating a series of circular disc-shaped workpieces by means of said magnetron source

Non-Patent Citations (6)

* Cited by examiner, † Cited by third party
Title
DATABASE WPI Section Ch Week 198927, Derwent World Patents Index; Class L03, AN 1989-195775, XP002191947 *
PATENT ABSTRACTS OF JAPAN vol. 010, no. 280 (C - 374) 24 September 1986 (1986-09-24) *
PATENT ABSTRACTS OF JAPAN vol. 012, no. 258 (C - 513) 20 July 1988 (1988-07-20) *
PATENT ABSTRACTS OF JAPAN vol. 1995, no. 02 31 March 1995 (1995-03-31) *
PATENT ABSTRACTS OF JAPAN vol. 1996, no. 07 31 July 1996 (1996-07-31) *
PATENT ABSTRACTS OF JAPAN vol. 1997, no. 04 30 April 1997 (1997-04-30) *

Also Published As

Publication number Publication date
WO2002016667B1 (en) 2002-08-01
AU2001286668A1 (en) 2002-03-04
WO2002016667A2 (en) 2002-02-28

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