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WO2002011499A1 - Procede et appareil permettant de generer des rayons x ou uv extremes - Google Patents

Procede et appareil permettant de generer des rayons x ou uv extremes Download PDF

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Publication number
WO2002011499A1
WO2002011499A1 PCT/SE2001/001646 SE0101646W WO0211499A1 WO 2002011499 A1 WO2002011499 A1 WO 2002011499A1 SE 0101646 W SE0101646 W SE 0101646W WO 0211499 A1 WO0211499 A1 WO 0211499A1
Authority
WO
WIPO (PCT)
Prior art keywords
jet
electron beam
ray
interaction
radiation
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/SE2001/001646
Other languages
English (en)
Inventor
Hans Hertz
Oscar Hemberg
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Jettec AB
Original Assignee
Jettec AB
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from SE0002785A external-priority patent/SE0002785D0/xx
Priority claimed from SE0003073A external-priority patent/SE522150C2/sv
Application filed by Jettec AB filed Critical Jettec AB
Priority to EP01952078A priority Critical patent/EP1305984B1/fr
Priority to AU2001272873A priority patent/AU2001272873A1/en
Priority to DE60143527T priority patent/DE60143527D1/de
Priority to AT01952078T priority patent/ATE489838T1/de
Priority to JP2002515466A priority patent/JP5073146B2/ja
Publication of WO2002011499A1 publication Critical patent/WO2002011499A1/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05G—X-RAY TECHNIQUE
    • H05G2/00—Apparatus or processes specially adapted for producing X-rays, not involving X-ray tubes, e.g. involving generation of a plasma
    • H05G2/001—Production of X-ray radiation generated from plasma
    • H05G2/002—Supply of the plasma generating material
    • H05G2/0027—Arrangements for controlling the supply; Arrangements for measurements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J35/00—X-ray tubes
    • H01J35/02—Details
    • H01J35/04—Electrodes ; Mutual position thereof; Constructional adaptations therefor
    • H01J35/08—Anodes; Anti cathodes
    • H01J35/112—Non-rotating anodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2235/00—X-ray tubes
    • H01J2235/08—Targets (anodes) and X-ray converters
    • H01J2235/081—Target material
    • H01J2235/082—Fluids, e.g. liquids, gases

Definitions

  • the present invention generally relates to a method and an apparatus for generating X-ray or extreme ultraviolet (EUV) radiation, especially with high brilliance.
  • the generated radiation can for example be used in medical diagnosis, non-destructive testing, lithography, microscopy, materials science, or in some other X-ray or EUV application.
  • X-ray sources of high power and brilliance are applied in many fields, for instance medical diagnosis, non-destructive testing, crystal structural analysis, surface physics, lithography, X-ray fluorescence, and microscopy.
  • X-rays are used for imaging the interior of objects that are opaque to visible light, for example in medical diagnostics and material inspection, where 10-1000 keV X-ray radiation is utilized, i.e. hard X-ray radiation.
  • Conventional hard X-ray sources in which an electron beam is accelerated towards a solid anode, generate X-ray radiation of relatively low brilliance.
  • the resolution of the obtained image basically depends on the distance to the X-ray source and the size of the source.
  • the exposure time depends on the distance to the source and the power of the source. In practice, this makes X-ray imaging a trade-off between resolution and exposure time.
  • the challenge has always been to extract as much X-ray power as possible from as small a source as possible, i.e. to achieve high brilliance.
  • X-rays are emitted both as continuous Bremsstrahlung and characteristic line emission, wherein the specific emission characteristics depend on the target material used.
  • the energy that is not converted into X- ray radiation is primarily deposited as heat in the solid target.
  • the primary factor limiting the power, and the brilliance, of the X-ray radiation emitted from a conventional X-ray tube is the heating of the anode. More specifically, the electron-beam power must be limited to the extent that the anode material does not melt.
  • Several different schemes have been introduced to increase the power limit.
  • One such scheme includes cooling and rotating the anode, see for example Chapters 3 and 7 in "Imaging Systems for Medical Diagnostics", E. Krestel, Siemens Aktiengesellschaft, Berlin and Kunststoff, 1990.
  • the cooled rotating anode can sustain a higher electron-beam power, its brilliance is still limited by the localized heating of the electron-beam focal spot. Also the average power load is limited since the same target material is used on every revolution.
  • very high intensity sources for medical diagnosis operate at 100 kW/mm 2
  • state of the art low-power micro-focus devices operate at 150 kW/mm 2 .
  • the invention aims at providing a method and an apparatus for generation of X-ray or EUV radiation with very high brilliance in combination with relatively high average power.
  • the inventive technique should also provide for stable and uncomplicated generation of X-ray or EUV radiation, with minimum production of debris.
  • a further objective is to provide a method and an apparatus generating radiation suitable for medical diagnosis and material inspection.
  • Still another object of the invention is to provide a method and an apparatus suitable for use in lithography, non-destructive testing, microscopy, crystal analysis, surface physics, materials science, X-ray photo spectroscopy (XPS) , X-ray fluorescence, protein structure determination by X-ray diffraction, and other X-ray application .
  • the invention provides a method for generating X-ray or EUV radiation, comprising the steps of forming a target jet by urging a liquid substance under pressure through an outlet opening, which target jet propagates through an area of interaction; and directing at least one electron beam onto the target jet in the area of interaction such that the electron beam interacts with the target jet to generate X-ray or EUV radiation.
  • the inventive method and apparatus allows for operation in either of two modes.
  • a first mode of operation hard X-ray radiation is generated by direct conversion of the electron-beam energy to Bremsstrahlung and characteristic line emission, essentially without heating the jet to a plasma-forming temperature.
  • soft X-ray or EUV radiation is generated by heating the jet to a plasma-forming tempera- ture.
  • the invention provides significant improvements over prior-art technology.
  • the jet target provides several advantages over the solid anode conventionally used in generation of hard X-ray radiation.
  • the liquid jet has a density high enough to allow for high brilliance and power of the generated radiation.
  • the jet is regenerative to its nature so there is no need to cool the target material.
  • the target material can be destroyed, i.e. heated to a temperature above its melting temperature, due to the regenerative nature of the jet target.
  • the electron-beam power density at the target may be increased significantly compared to non- regenerative targets.
  • the jet can be given a very high propagation speed through the area of interaction. Compared to conventional stationary or rotating anodes, more energy can be deposited in such a fast propagating jet due to the correspondingly high rate of material transport into the area of interaction.
  • the electron beam should preferably be properly focused thereon.
  • the acceleration voltage used for generating the electron beam will be in the order of 5-500 kV, but might be higher.
  • the beam current will typically be in the order of 10-1000 mA, but might be higher.
  • the second mode of operation emanates from the basic insight that at least one electron beam can be used instead of a laser beam to form a plasma emitting soft X- ray or EUV radiation.
  • the inventive method and apparatus allows for a significant increase in wall-plug conversion efficiency, as well as lower cost and complexity.
  • Other attractive features include low emission of debris, essentially no limitation on repetition rate, and uninterrupted usage.
  • the electron source should typically deliver in the order of 10 10 -10 13 /cm 2 to the area of interaction in order to establish the desired plasma temperature.
  • the electron source can be pulsed or continuous in either of the first and second modes .
  • the beam is preferably focused on the jet to essentially match the size of the beam to the size of the jet.
  • the transverse dimensions of the line focus being essentially matched to the transverse dimensions of the jet.
  • the jet is preferably generated with a diameter of about 1-100 ⁇ m but may be as large as millimeters. Thereby, the radiation will be emitted with high brilliance from a small area of interaction.
  • the inventive apparatus and method may naturally be used in conjunction with X-ray optics, such as polycapillary lenses, compound refractive lenses or X-ray mirrors.
  • the target jet is generated by urging a liquid substance through an outlet opening, such as a nozzle or an orifice, typically by means of a pump and/or a pressurized reservoir yielding a pressure typically in the range of 0.5-500 MPa to bring about a jet propagation ⁇ to to ⁇ >
  • action 9 between the beam 4 and the jet 5 is located on a spatially continuous portion of the jet 5, i.e. a portion having a length that significantly exceeds the diameter.
  • the apparatus can be continuously or semi- continuously operated to generate X-ray or EUV radiation, as will be described below.
  • this approach results in sufficient spatial stability of the jet 5 to permit the focal spot of the electron beam 4 on the jet 5 to be of approximately the same size as the diameter of the jet 5.
  • this approach also alleviates the need for any temporal synchronization of the electron source 2 with the target generator 3.
  • similar advantages can be obtained with jets consisting of separate, spatially continuous portions.
  • any formation of condensed matter emanating from a liquid jet can be used as target for the electron-beam within the scope of the invention, be it liquid or solid, spatially continuous, droplets, or a spray of droplets or clusters.
  • the interaction of the beam 4 with the jet 5 results, in a first mode of operation, in that radiation is emitted from the area of interaction 9 by direct conversion, essentially without heating the jet 5 to a plasma-forming temperature.
  • these characteristics are adapted such that the jet 5 is heated to a suitable plasma-forming temperature.
  • the choice of mode depends on the desired wavelength range of the generated radiation.
  • a plasma-based operation is most effective for generating soft X-ray and EUV radiation, i.e.
  • the electron source 2 is controlled in such a manner, in relation to the characteristics of the target 5, that essentially no plasma is formed at the area of interaction 9.
  • the distance from the outlet opening 8 to the area of interaction 9 is sufficiently long, typically 0.5-10 mm, so that the beam-jet-interaction does not damage the outlet.
  • a jet 5 of liquid metal having a diameter of about 30 ⁇ m and a propagation speed of about 600 m/s, the jet 5 being irradiated about 10 mm away from the outlet opening 8 by means of an electron beam 4 of about 100 mA and 100 keV, the beam 4 being focused on the jet 5 to obtain a power density of about 10 MW/mm 2 in the area of interaction 9.
  • the jet 5 is preferably formed from metals heated to a liquid state.
  • tin (Sn) should be easy to use, although other metals or alloys may be used for generation of radiation in a desired wavelength range.
  • gases cooled to a liquid state or material dissolved in a carrier liquid can include a window (not shown) transparent to X-rays for extracting the generated radiation from the chamber 1 to LO ⁇ CO CO H H
  • the jet 5 is preferably formed from a noble gas cooled to a liquid state, to avoid coating of sensitive components within the apparatus.
  • a noble gas cooled to a liquid state
  • liquefied noble gases it is conceivable to use completely different substances for generating the jet, such as material dissolved in a carrier liquid or liquefied metals.
  • An apparatus operating in the second mode and being designed for use in lithography or microscopy can include a collector system of multi-layer mirrors (not shown) that collects a large portion of the created EUV or soft x-ray radiation and transports it to illumination optics and the rest of the lithography/microscopy system.
  • a collector system of multi-layer mirrors (not shown) that collects a large portion of the created EUV or soft x-ray radiation and transports it to illumination optics and the rest of the lithography/microscopy system.
  • a microscopic target in the form of a jet 5 generated from a liquid substance, the production of debris will be very low.
  • the inventive apparatus operating in the second mode has the potential of providing the same performance as an LPP system but at a lower price since multi kilowatt lasers are very complicated and expensive.
  • the wall-plug conversion efficiency is much higher for electron sources than for lasers.
  • inventive method and apparatus can be used to provide radiation for medical diagnosis, non-destructive testing, lithography, crystal analysis, microscopy, materials science, microscopy- surface physics, protein structure determination by X-ray diffraction, X-ray photo spectroscopy (XPS) , X-ray fluorescence, or in some other X-ray or EUV application.
  • XPS X-ray photo spectroscopy

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Optics & Photonics (AREA)
  • Plasma & Fusion (AREA)
  • X-Ray Techniques (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Analysing Materials By The Use Of Radiation (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)

Abstract

L'invention concerne un procédé et un appareil permettant de générer des rayons X ou UV extrêmes. Selon ce procédé, on provoque l'interaction d'un faisceau électronique et d'un jet cible de propagation généralement dans une chambre sous vide. Le jet cible est constitué d'une substance liquide sous pression expulsée par un orifice de sortie. On peut générer des rayons X durs par conversion de l'énergie du faisceau électronique en émission d'un rayonnement de freinage et d'une ligne caractéristique principalement sans chauffer le jet à une température produisant du plasma. On peut générer des rayons X ou UV extrêmes à faible énergie en chauffant, par le faisceau électronique, le jet à une température produisant du plasma.
PCT/SE2001/001646 2000-07-28 2001-07-18 Procede et appareil permettant de generer des rayons x ou uv extremes Ceased WO2002011499A1 (fr)

Priority Applications (5)

Application Number Priority Date Filing Date Title
EP01952078A EP1305984B1 (fr) 2000-07-28 2001-07-18 Procede et appareil permettant de generer des rayons x
AU2001272873A AU2001272873A1 (en) 2000-07-28 2001-07-18 Method and apparatus for generating x-ray or euv radiation
DE60143527T DE60143527D1 (de) 2000-07-28 2001-07-18 Verfahren und vorrichtung zur erzeugung von röntgenstrahlung
AT01952078T ATE489838T1 (de) 2000-07-28 2001-07-18 Verfahren und vorrichtung zur erzeugung von röntgenstrahlung
JP2002515466A JP5073146B2 (ja) 2000-07-28 2001-07-18 Ｘ線発生方法および装置

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
SE0002785-4 2000-07-28
SE0002785A SE0002785D0 (sv) 2000-07-28 2000-07-28 Method and apparatus for generating x-ray or EUV radiation as well as use thereof
SE0003073-4 2000-08-31
SE0003073A SE522150C2 (sv) 2000-08-31 2000-08-31 Förfarande och apparat för alstring av röntgenstrålning samt användning därav

Publications (1)

Publication Number Publication Date
WO2002011499A1 true WO2002011499A1 (fr) 2002-02-07

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PCT/SE2001/001646 Ceased WO2002011499A1 (fr) 2000-07-28 2001-07-18 Procede et appareil permettant de generer des rayons x ou uv extremes

Country Status (7)

Country Link
EP (1) EP1305984B1 (fr)
JP (1) JP5073146B2 (fr)
CN (1) CN1272989C (fr)
AT (1) ATE489838T1 (fr)
AU (1) AU2001272873A1 (fr)
DE (1) DE60143527D1 (fr)
WO (1) WO2002011499A1 (fr)

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2002076156A1 (fr) * 2001-03-15 2002-09-26 Lzh Laserzentrum Hannover E.V. Procede et dispositif pour la generation d'un rayonnement ultraviolet extreme
JP2005019380A (ja) * 2003-06-26 2005-01-20 Northrop Grumman Corp プラズマが隔離されたレーザ生成プラズマｅｕｖ光源
US7068367B2 (en) 2002-10-08 2006-06-27 Xtreme Technologies Gmbh Arrangement for the optical detection of a moving target flow for a pulsed energy beam pumped radiation
JP2007519193A (ja) * 2004-01-26 2007-07-12 マツクス−プランク−ゲゼルシャフト ツール フエルデルング デル ヴイツセンシャフテン エー フアウ 真空チャンバ内での固体フィラメントの製造のための方法及び装置
DE102008026938A1 (de) 2008-06-05 2009-12-17 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Strahlungsquelle und Verfahren zum Erzeugen von Röntgenstrahlung
WO2010112048A1 (fr) 2009-04-03 2010-10-07 Excillum Ab Fourniture d'une cible en métal liquide en génération de rayons x
RU2709183C1 (ru) * 2019-04-26 2019-12-17 Общество С Ограниченной Ответственностью "Эуф Лабс" Источник рентгеновского излучения с жидкометаллической мишенью и способ генерации излучения
CN113728410A (zh) * 2019-04-26 2021-11-30 Euv实验室有限公司 具有旋转液态金属靶的x射线源
US20220254595A1 (en) * 2017-12-01 2022-08-11 Excillum Ab X-ray source and method for generating x-ray radiation

Families Citing this family (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4337648B2 (ja) * 2004-06-24 2009-09-30 株式会社ニコン Ｅｕｖ光源、ｅｕｖ露光装置、及び半導体デバイスの製造方法
US7557366B2 (en) * 2006-05-04 2009-07-07 Asml Netherlands B.V. Radiation generating device, lithographic apparatus, device manufacturing method and device manufactured thereby
SE530094C2 (sv) * 2006-05-11 2008-02-26 Jettec Ab Metod för alstring av röntgenstrålning genom elektronbestrålning av en flytande substans
KR101437583B1 (ko) * 2007-07-03 2014-09-12 삼성전자주식회사 리소그라피 장치 및 리소그라피 방법
CN104681378B (zh) * 2009-04-03 2017-04-12 伊克斯拉姆公司 在x射线产生中液体金属靶的供应
JP2011054376A (ja) * 2009-09-01 2011-03-17 Ihi Corp Ｌｐｐ方式のｅｕｖ光源とその発生方法
EP2592909B1 (fr) * 2010-07-09 2019-02-13 BSR Co., Ltd. Dispositif et procede d'emission de faisceau a electrons
JP5167475B2 (ja) * 2010-12-27 2013-03-21 双葉電子工業株式会社 光殺菌装置および紫外線エックス線発生装置
JP5347138B2 (ja) * 2010-12-27 2013-11-20 双葉電子工業株式会社 光殺菌装置および紫外線エックス線発生装置
US20140161233A1 (en) 2012-12-06 2014-06-12 Bruker Axs Gmbh X-ray apparatus with deflectable electron beam
CN103079327B (zh) * 2013-01-05 2015-09-09 中国科学院微电子研究所 一种靶源预整形增强的极紫外光发生装置
JP6277204B2 (ja) * 2013-02-13 2018-02-07 コーニンクレッカ フィリップス エヌ ヴェＫｏｎｉｎｋｌｉｊｋｅ Ｐｈｉｌｉｐｓ Ｎ．Ｖ． 多重ｘ線ビーム管
CN103209536A (zh) * 2013-03-22 2013-07-17 中国科学院上海光学精密机械研究所 产生软x射线的方法
DE102013209447A1 (de) * 2013-05-22 2014-11-27 Siemens Aktiengesellschaft Röntgenquelle und Verfahren zur Erzeugung von Röntgenstrahlung
DE102013220189A1 (de) 2013-10-07 2015-04-23 Siemens Aktiengesellschaft Röntgenquelle und Verfahren zur Erzeugung von Röntgenstrahlung
EP3091903B1 (fr) 2014-01-07 2018-10-03 Jettec AB Micro-imagerie radiographique
CN103871832B (zh) * 2014-03-21 2016-08-24 中国科学院空间科学与应用研究中心 一种极紫外脉冲发生调制器
WO2016010448A1 (fr) 2014-07-17 2016-01-21 Siemens Aktiengesellschaft Injecteur de fluide pour tubes à rayons x et procédé pour fournir une anode liquide par injection de métal liquide
US9301381B1 (en) * 2014-09-12 2016-03-29 International Business Machines Corporation Dual pulse driven extreme ultraviolet (EUV) radiation source utilizing a droplet comprising a metal core with dual concentric shells of buffer gas
DE102014226814B4 (de) 2014-12-22 2023-05-11 Siemens Healthcare Gmbh Metallstrahlröntgenröhre
DE102014226813A1 (de) * 2014-12-22 2016-06-23 Siemens Aktiengesellschaft Metallstrahlröntgenröhre
EP3214635A1 (fr) * 2016-03-01 2017-09-06 Excillum AB Source de rayons x cible liquide avec outil de mélange à jet
RU2670273C2 (ru) * 2017-11-24 2018-10-22 Общество с ограниченной ответственностью "РнД-ИСАН" Устройство и способ для генерации излучения из лазерной плазмы
KR102447685B1 (ko) * 2020-07-22 2022-09-27 포항공과대학교 산학협력단 특정 파장대의 광원을 발생시키기 위한 장치 및 방법
JP7627079B2 (ja) * 2021-09-10 2025-02-05 慶熙大學校産學協力團 電子ビームおよび液滴ベースの極紫外線光源装置
US11882642B2 (en) 2021-12-29 2024-01-23 Innovicum Technology Ab Particle based X-ray source
WO2023128856A1 (fr) 2021-12-29 2023-07-06 Innovicum Technology Ab Source de rayons x à base de particules

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4953191A (en) * 1989-07-24 1990-08-28 The United States Of America As Represented By The United States Department Of Energy High intensity x-ray source using liquid gallium target
US5052034A (en) 1989-10-30 1991-09-24 Siemens Aktiengesellschaft X-ray generator
JPH05258692A (ja) * 1992-03-10 1993-10-08 Nikon Corp Ｘ線発生方法およびｘ線発生装置
WO1997040650A1 (fr) * 1996-04-25 1997-10-30 Jettec Ab Procede et dispositif de production d'un rayonnement x ou u.v. extreme
WO1999034395A1 (fr) * 1997-12-31 1999-07-08 University Of Central Florida Sources pour lampe a decharge et procedes correspondants
EP0957506A1 (fr) * 1998-05-15 1999-11-17 Philips Patentverwaltung GmbH Source à rayons X avec cible à métal liquide
US6069937A (en) * 1997-07-18 2000-05-30 Nikon Corporation Illumination apparatus

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61153935A (ja) * 1984-12-26 1986-07-12 Toshiba Corp プラズマｘ線発生装置
JPH03283398A (ja) * 1990-03-30 1991-12-13 Shimadzu Corp Ｘ線発生装置
JP2552433B2 (ja) * 1994-06-30 1996-11-13 関西電力株式会社 レーザープラズマｘ線源のデブリス除去方法及び装置
JPH08162286A (ja) * 1994-12-07 1996-06-21 Olympus Optical Co Ltd レーザプラズマ光源
JPH10221499A (ja) * 1997-02-07 1998-08-21 Hitachi Ltd レーザプラズマｘ線源およびそれを用いた半導体露光装置並びに半導体露光方法
US5763930A (en) * 1997-05-12 1998-06-09 Cymer, Inc. Plasma focus high energy photon source
AU3466899A (en) * 1998-04-03 1999-10-25 Advanced Energy Systems, Inc. Diffuser system and energy emission system for photolithography
JP3602356B2 (ja) * 1998-12-02 2004-12-15 三菱電機株式会社 電磁波発生装置

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4953191A (en) * 1989-07-24 1990-08-28 The United States Of America As Represented By The United States Department Of Energy High intensity x-ray source using liquid gallium target
US5052034A (en) 1989-10-30 1991-09-24 Siemens Aktiengesellschaft X-ray generator
JPH05258692A (ja) * 1992-03-10 1993-10-08 Nikon Corp Ｘ線発生方法およびｘ線発生装置
WO1997040650A1 (fr) * 1996-04-25 1997-10-30 Jettec Ab Procede et dispositif de production d'un rayonnement x ou u.v. extreme
US6069937A (en) * 1997-07-18 2000-05-30 Nikon Corporation Illumination apparatus
WO1999034395A1 (fr) * 1997-12-31 1999-07-08 University Of Central Florida Sources pour lampe a decharge et procedes correspondants
EP0957506A1 (fr) * 1998-05-15 1999-11-17 Philips Patentverwaltung GmbH Source à rayons X avec cible à métal liquide
US6185277B1 (en) * 1998-05-15 2001-02-06 U.S. Philips Corporation X-ray source having a liquid metal target

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
PATENT ABSTRACTS OF JAPAN *
TER-AVETISYAN ET AL., PROCEEDINGS OF THE SPIE, no. 4060, 2000, pages 204 - 208

Cited By (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2002076156A1 (fr) * 2001-03-15 2002-09-26 Lzh Laserzentrum Hannover E.V. Procede et dispositif pour la generation d'un rayonnement ultraviolet extreme
US7068367B2 (en) 2002-10-08 2006-06-27 Xtreme Technologies Gmbh Arrangement for the optical detection of a moving target flow for a pulsed energy beam pumped radiation
DE10339495B4 (de) * 2002-10-08 2007-10-04 Xtreme Technologies Gmbh Anordnung zur optischen Detektion eines bewegten Targetstromes für eine gepulste energiestrahlgepumpte Strahlungserzeugung
JP2005019380A (ja) * 2003-06-26 2005-01-20 Northrop Grumman Corp プラズマが隔離されたレーザ生成プラズマｅｕｖ光源
JP2007519193A (ja) * 2004-01-26 2007-07-12 マツクス−プランク−ゲゼルシャフト ツール フエルデルング デル ヴイツセンシャフテン エー フアウ 真空チャンバ内での固体フィラメントの製造のための方法及び装置
US8565381B2 (en) 2008-06-05 2013-10-22 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Radiation source and method for the generation of X-radiation
DE102008026938A1 (de) 2008-06-05 2009-12-17 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Strahlungsquelle und Verfahren zum Erzeugen von Röntgenstrahlung
EP2743963A2 (fr) 2009-04-03 2014-06-18 Excillum AB Alimentation d'une cible en métal liquide dans la génération de rayons X
WO2010112048A1 (fr) 2009-04-03 2010-10-07 Excillum Ab Fourniture d'une cible en métal liquide en génération de rayons x
EP2743963A3 (fr) * 2009-04-03 2014-07-30 Excillum AB Alimentation d'une cible en métal liquide dans la génération de rayons X
US8837679B2 (en) 2009-04-03 2014-09-16 Excillum Ab Supply of a liquid-metal target in X-ray generation
US9530607B2 (en) 2009-04-03 2016-12-27 Excillum Ab Supply of a liquid-metal target in X-ray generation
US20220254595A1 (en) * 2017-12-01 2022-08-11 Excillum Ab X-ray source and method for generating x-ray radiation
US11963286B2 (en) * 2017-12-01 2024-04-16 Excillum Ab X-ray source and method for generating X-ray radiation
RU2709183C1 (ru) * 2019-04-26 2019-12-17 Общество С Ограниченной Ответственностью "Эуф Лабс" Источник рентгеновского излучения с жидкометаллической мишенью и способ генерации излучения
CN113728410A (zh) * 2019-04-26 2021-11-30 Euv实验室有限公司 具有旋转液态金属靶的x射线源

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CN1272989C (zh) 2006-08-30
JP5073146B2 (ja) 2012-11-14
JP2004505421A (ja) 2004-02-19
ATE489838T1 (de) 2010-12-15
EP1305984A1 (fr) 2003-05-02
AU2001272873A1 (en) 2002-02-13
DE60143527D1 (de) 2011-01-05
CN1466860A (zh) 2004-01-07

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