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WO2002006899A3 - Systeme et procedes pour caracteriser des systemes optiques a l'aide de reticules holographiques - Google Patents

Systeme et procedes pour caracteriser des systemes optiques a l'aide de reticules holographiques Download PDF

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Publication number
WO2002006899A3
WO2002006899A3 PCT/US2001/022518 US0122518W WO0206899A3 WO 2002006899 A3 WO2002006899 A3 WO 2002006899A3 US 0122518 W US0122518 W US 0122518W WO 0206899 A3 WO0206899 A3 WO 0206899A3
Authority
WO
WIPO (PCT)
Prior art keywords
reticle
optical system
space
focus
volume
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/US2001/022518
Other languages
English (en)
Other versions
WO2002006899A2 (fr
Inventor
Matthew E Hansen
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
ASML US Inc
Original Assignee
ASML US Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by ASML US Inc filed Critical ASML US Inc
Priority to EP01957171A priority Critical patent/EP1301830A2/fr
Priority to AU2001278941A priority patent/AU2001278941A1/en
Priority to JP2002512746A priority patent/JP4599029B2/ja
Publication of WO2002006899A2 publication Critical patent/WO2002006899A2/fr
Publication of WO2002006899A3 publication Critical patent/WO2002006899A3/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70591—Testing optical components
    • G03F7/706—Aberration measurement
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
    • G03F1/44—Testing or measuring features, e.g. grid patterns, focus monitors, sawtooth scales or notched scales
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70283—Mask effects on the imaging process
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70616—Monitoring the printed patterns
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691—Handling of masks or workpieces
    • G03F7/70733—Handling masks and workpieces, e.g. exchange of workpiece or mask, transport of workpiece or mask
    • G03F7/70741—Handling masks outside exposure position, e.g. reticle libraries
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
    • G11B7/004—Recording, reproducing or erasing methods; Read, write or erase circuits therefor
    • G11B7/0065—Recording, reproducing or erasing by using optical interference patterns, e.g. holograms

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Library & Information Science (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Testing Of Optical Devices Or Fibers (AREA)

Abstract

L'invention concerne un système optique caractérisé en ce qu'il est obtenu rapidement et aisément en une seule phase d'acquisition par obtention de données-image dans un volume d'espace image. Un réticule et un plan image sont positionnés obliquement l'un par rapport à l'autre, de sorte qu'un réticule ayant une pluralité de jeux de caractéristiques dessus, y compris des configurations ou des réseaux gravés périodiques, soit représenté dans un volume d'espace, y compris la profondeur de foyer. Des instruments métrologiques sont utilisés pour analyser l'image détectée ou enregistrée dans un volume d'espace à travers la profondeur de foyer en une seule étape ou exposition afin de déterminer les caractéristiques d'imagerie d'un système optique. Le foyer, la courbure de champ, l'astigmatisme, les déviations de plan sphérique, de coma et/ou de plan focal peuvent être déterminées. L'invention s'applique notamment à la fabrication de semi-conducteurs et aux techniques photolithographiques qu'elle implique, et permet de caractériser rapidement un système optique en une seule exposition, avec une qualité de données extrêmement améliorée et une couverture continue de l'ensemble de l'espace des paramètres. Dans certains modes de réalisation, le réticule d'essai est produit par holographie, en faisant interférer au moins deux faisceaux de rayonnement optique. Le modèle d'interférence qui en résulte est enregistré sur un réticule et est utilisé pour tester le système optique. La géométrie du modèle d'interférence holographique est étroitement surveillée par les propriétés des faisceaux en interférence et s'avère de ce fait nettement plus précise que les techniques traditionnelles d'écriture de réticules.
PCT/US2001/022518 2000-07-19 2001-07-19 Systeme et procedes pour caracteriser des systemes optiques a l'aide de reticules holographiques Ceased WO2002006899A2 (fr)

Priority Applications (3)

Application Number Priority Date Filing Date Title
EP01957171A EP1301830A2 (fr) 2000-07-19 2001-07-19 Systeme et procedes pour caracteriser des systemes optiques a l'aide de reticules holographiques
AU2001278941A AU2001278941A1 (en) 2000-07-19 2001-07-19 System and method for characterizing optical systems using holographic reticles
JP2002512746A JP4599029B2 (ja) 2000-07-19 2001-07-19 ホログラフィックレチクルを用いて光学システムを特徴付けする方法

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US21918700P 2000-07-19 2000-07-19
US60/219,187 2000-07-19

Publications (2)

Publication Number Publication Date
WO2002006899A2 WO2002006899A2 (fr) 2002-01-24
WO2002006899A3 true WO2002006899A3 (fr) 2002-06-20

Family

ID=22818235

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2001/022518 Ceased WO2002006899A2 (fr) 2000-07-19 2001-07-19 Systeme et procedes pour caracteriser des systemes optiques a l'aide de reticules holographiques

Country Status (5)

Country Link
EP (1) EP1301830A2 (fr)
JP (1) JP4599029B2 (fr)
KR (2) KR100886897B1 (fr)
AU (1) AU2001278941A1 (fr)
WO (1) WO2002006899A2 (fr)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10131534B4 (de) * 2001-06-29 2007-07-19 Infineon Technologies Ag Verfahren zum Herstellen einer Maske zum Belichten
US6885429B2 (en) * 2002-06-28 2005-04-26 Asml Holding N.V. System and method for automated focus measuring of a lithography tool
AT414285B (de) * 2004-09-28 2006-11-15 Femtolasers Produktions Gmbh Mehrfachreflexions-verzögerungsstrecke für einen laserstrahl sowie resonator bzw. kurzpuls-laservorrichtung mit einer solchen verzögerungsstrecke
US11243068B1 (en) 2019-02-28 2022-02-08 Apple Inc. Configuration and operation of array of self-mixing interferometry sensors
US11473898B2 (en) 2019-05-24 2022-10-18 Apple Inc. Wearable voice-induced vibration or silent gesture sensor
JP2022544187A (ja) 2019-08-09 2022-10-17 エーエスエムエル ネザーランズ ビー．ブイ． 計測デバイスおよびそのための位相変調装置
US11803130B2 (en) 2019-08-09 2023-10-31 Asml Netherlands B.V. Phase modulators in alignment to decrease mark size
GB2598604B (en) 2020-09-04 2023-01-18 Envisics Ltd A holographic projector
US12209890B2 (en) * 2022-03-31 2025-01-28 Apple Inc. Optical sensor module including an interferometric sensor and extended depth of focus optics

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03235319A (ja) * 1990-02-13 1991-10-21 Hitachi Ltd 拡大投影露光方法及びその装置
WO1998021629A2 (fr) * 1996-11-15 1998-05-22 Diffraction, Ltd. Masque holographique en ligne destine au micro-usinage

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3829219A (en) * 1973-03-30 1974-08-13 Itek Corp Shearing interferometer
JPS5597220A (en) * 1979-01-19 1980-07-24 Dainippon Printing Co Ltd Method of producing metal filter
JPS61190368A (ja) * 1985-02-20 1986-08-25 Matsushita Electric Ind Co Ltd 微細パタ−ンの形成方法
JPH03263313A (ja) * 1990-03-13 1991-11-22 Mitsubishi Electric Corp 干渉露光装置
US5128530A (en) * 1991-05-28 1992-07-07 Hughes Aircraft Company Piston error estimation method for segmented aperture optical systems while observing arbitrary unknown extended scenes
JPH05217856A (ja) * 1992-01-31 1993-08-27 Fujitsu Ltd 露光方法及び露光装置
JPH08286009A (ja) * 1995-04-13 1996-11-01 Sumitomo Electric Ind Ltd チャープ格子形成装置
JPH10270330A (ja) * 1997-03-27 1998-10-09 Hitachi Ltd パターン形成方法及び装置
JP4032501B2 (ja) * 1998-04-22 2008-01-16 株式会社ニコン 投影光学系の結像特性計測方法及び投影露光装置
JPH11354014A (ja) * 1998-06-08 1999-12-24 Ricoh Co Ltd 電界放射型電子源の作製方法
JP2000150347A (ja) * 1998-11-11 2000-05-30 Hitachi Ltd 半導体集積回路装置の製造方法
US6379868B1 (en) * 1999-04-01 2002-04-30 Agere Systems Guardian Corp. Lithographic process for device fabrication using dark-field illumination

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03235319A (ja) * 1990-02-13 1991-10-21 Hitachi Ltd 拡大投影露光方法及びその装置
WO1998021629A2 (fr) * 1996-11-15 1998-05-22 Diffraction, Ltd. Masque holographique en ligne destine au micro-usinage

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
PATENT ABSTRACTS OF JAPAN vol. 016, no. 014 (E - 1154) 14 January 1992 (1992-01-14) *
ROSS I N ET AL: "High-resolution holographic image projection at visible and ultraviolet wavelengths", APPLIED OPTICS, 1 MARCH 1988, USA, vol. 27, no. 5, pages 967 - 972, XP002185705, ISSN: 0003-6935 *

Also Published As

Publication number Publication date
KR100956670B1 (ko) 2010-05-10
JP4599029B2 (ja) 2010-12-15
EP1301830A2 (fr) 2003-04-16
KR20080091263A (ko) 2008-10-09
KR20020072531A (ko) 2002-09-16
JP2004504634A (ja) 2004-02-12
AU2001278941A1 (en) 2002-01-30
WO2002006899A2 (fr) 2002-01-24
KR100886897B1 (ko) 2009-03-05

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